JPH0821352B2 - Semiconductor substrate ion implantation system - Google Patents
Semiconductor substrate ion implantation systemInfo
- Publication number
- JPH0821352B2 JPH0821352B2 JP61101378A JP10137886A JPH0821352B2 JP H0821352 B2 JPH0821352 B2 JP H0821352B2 JP 61101378 A JP61101378 A JP 61101378A JP 10137886 A JP10137886 A JP 10137886A JP H0821352 B2 JPH0821352 B2 JP H0821352B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- ion implantation
- source
- vaporizers
- substrate ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 title claims description 16
- 238000005468 ion implantation Methods 0.000 title claims description 12
- 239000007787 solid Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 2
- 239000007943 implant Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 18
- 239000006200 vaporizer Substances 0.000 description 9
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板イオン注入装置に関する。The present invention relates to a semiconductor substrate ion implantation apparatus.
従来の半導体基板イオン注入装置は、第３図に示すよ
うに、１個のソースヘッド部１に、１個の固体イオン源
４を加熱して昇華させるベーパライザ２があるだけの構
造であった。このベーパライザ２には、ヒータ３や、電
源端子5,冷却用フレオン配管接続口６等が設けられてい
る。As shown in FIG. 3, the conventional semiconductor substrate ion implantation apparatus has a structure in which only one source head unit 1 has a vaporizer 2 for heating and sublimating one solid ion source 4. The vaporizer 2 is provided with a heater 3, a power supply terminal 5, a cooling Freon pipe connection port 6 and the like.
前述した従来の構造の半導体基板イオン注入装置を用
いると、固体イオン源４は１種類しか持つことができ
ず、固体イオン源４を加熱して昇華させるベーパライザ
２の中に存在する固体イオン源４以外のイオンを注入す
る場合には、ベーパライザ２の温度を下げ、イオンソー
ス部を大気状態にした後、ソースヘッド部１を取り出
し、ベーパライザ２の中に所望の新しい固体イオン源を
詰め換えて、ソースヘッド部１を組み込み、再び真空状
態にするという工数・時間がかかる欠点があった。When the semiconductor substrate ion implantation apparatus having the above-described conventional structure is used, the solid ion source 4 can have only one type, and the solid ion source 4 existing in the vaporizer 2 for heating and sublimating the solid ion source 4 is present. In the case of implanting ions other than the above, after lowering the temperature of the vaporizer 2 and setting the ion source portion to the atmospheric state, the source head portion 1 is taken out, and the vaporizer 2 is refilled with a desired new solid ion source, There is a drawback that it takes a lot of man-hours and time to assemble the source head unit 1 and make the vacuum state again.
本発明の目的は、前記欠点を解決し、イオン種切り換
え時において、時間と工数を減少するようにした半導体
基板イオン注入装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned drawbacks and to provide a semiconductor substrate ion implantation apparatus that reduces time and man-hours when switching ion species.
本発明の構成は、半導体基板に、所望のイオンを選択
して、電界によって加速して、注入する半導体基板イオ
ン注入装置において、固体イオン源を加熱して昇華させ
るベーパライザをソースヘッド部に複数個持ち、前記複
数のベーパライザは、各々加熱用ヒータと冷却用配管と
を備えていることを特徴とする。According to the configuration of the present invention, in a semiconductor substrate ion implantation apparatus in which desired ions are selected, accelerated by an electric field, and implanted into a semiconductor substrate, a plurality of vaporizers for heating and sublimating a solid ion source are source head portions. The plurality of vaporizers each have a heater for heating and a pipe for cooling.
次に本発明について図面を参照して詳細に説明する。 Next, the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例の半導体基板イオン注入装
置の主としてソースヘッド部分を示す断面図である。同
図において、本実施例のソースヘッド部１は、２個のベ
ーパライザ2,7を持ち、それぞれ異なる２つの固体ソー
ス源4,9を含んでいる。この２個のベーパライザ2,7は、
それぞれ独立にヒータ3,8を持ち、さらにベーパライザ
電源端子5,10、及び冷却用フレオン配管接続口6,11を有
している。FIG. 1 is a sectional view mainly showing a source head portion of a semiconductor substrate ion implantation apparatus according to an embodiment of the present invention. In the figure, the source head unit 1 of this embodiment has two vaporizers 2 and 7, and includes two different solid source sources 4 and 9, respectively. These two vaporizers 2,7 are
The heaters 3 and 8 are independent of each other, and further, vaporizer power supply terminals 5 and 10 and cooling Freon pipe connection ports 6 and 11 are provided.
第２図は本発明の他の実施例の半導体基板イオン注入
装置を示す正面図である。FIG. 2 is a front view showing a semiconductor substrate ion implantation apparatus according to another embodiment of the present invention.
同図において、ベーパライザ2,7,12が３個配列されて
いる。このように、ベーパライザ2,7,12が、３個設けた
場合には、円形状にベーパライザを並べることにより、
面積も大幅に大きくなることはない。In the figure, three vaporizers 2, 7, 12 are arranged. In this way, when three vaporizers 2, 7, 12 are provided, by arranging the vaporizers in a circular shape,
The area does not increase significantly.
以上説明したように、本発明によれば、１個のソース
ヘッド部に複数個の固体イオン源を加熱して昇華させる
ベーパライザを持たせることにより、イオン種切り換え
の際に、固体イオン源を詰め換える必要もなく、工数・
時間がかからないという効果が得られる。更に、複数個
のベーパライザに、それぞれ独立に加熱用ヒータ，冷却
用フレオン配管を持たせた場合、選択的に固体イオン源
を加熱させることができ、選択していないベーパライザ
が熱を持ち、固体イオン源が加熱されて昇華されること
がない。As described above, according to the present invention, one source head section is provided with a vaporizer for heating and sublimating a plurality of solid ion sources, so that the solid ion sources are packed when ion species are switched. No need to change, man-hour
The effect is that it does not take time. Furthermore, when a plurality of vaporizers are provided with heating heaters and cooling Freon pipes independently of each other, the solid ion source can be selectively heated, and the vaporizers not selected have heat and solid ion sources. The source is not heated to sublime.
第１図は本発明の一実施例の半導体基板イオン注入装置
を示す断面図、第２図は本発明の他の実施例の半導体基
板イオン注入装置を示す正面図、第３図は従来の半導体
基板イオン注入装置を示す断面図である。 １……ソースヘッド部、2,7,12……ベーパライザ、3,8
……ヒータ、4,9……固体イオン源、5,10……ベーパラ
イザ電源端子、6,11……冷却用フレオン配管接続口。FIG. 1 is a sectional view showing a semiconductor substrate ion implanting apparatus according to an embodiment of the present invention, FIG. 2 is a front view showing a semiconductor substrate ion implanting apparatus according to another embodiment of the present invention, and FIG. 3 is a conventional semiconductor. It is a sectional view showing a substrate ion implantation device. 1 …… Source head part, 2,7,12 …… Vaporizer, 3,8
...... Heater, 4,9 …… Solid ion source, 5,10 …… Vaporizer power supply terminal, 6,11 …… Freon piping connection for cooling.
Claims (1)
電界によって加速して、注入する半導体基板イオン注入
装置において、固体イオン源を加熱して昇華させるベー
パライザをソースヘッド部に複数個持ち、前記複数のベ
ーパライザは、各々加熱用ヒータと冷却用配管とを備え
ていることを特徴とする半導体基板イオン注入装置。1. A desired ion is selected for a semiconductor substrate,
In a semiconductor substrate ion implantation apparatus that accelerates and implants by an electric field, a source head portion has a plurality of vaporizers for heating and sublimating a solid ion source, and each of the vaporizers has a heating heater and a cooling pipe. A semiconductor substrate ion implantation apparatus comprising: a semiconductor substrate ion implantation apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101378A JPH0821352B2 (en) | 1986-04-30 | 1986-04-30 | Semiconductor substrate ion implantation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101378A JPH0821352B2 (en) | 1986-04-30 | 1986-04-30 | Semiconductor substrate ion implantation system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62256351A JPS62256351A (en) | 1987-11-09 |
| JPH0821352B2 true JPH0821352B2 (en) | 1996-03-04 |
Family
ID=14299130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61101378A Expired - Fee Related JPH0821352B2 (en) | 1986-04-30 | 1986-04-30 | Semiconductor substrate ion implantation system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821352B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3123909B2 (en) * | 1995-11-27 | 2001-01-15 | 日本電気株式会社 | Charge conversion device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6271147A (en) * | 1985-09-25 | 1987-04-01 | Hitachi Ltd | Ion source with evaporation furnace |
-
1986
- 1986-04-30 JP JP61101378A patent/JPH0821352B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62256351A (en) | 1987-11-09 |
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