JPH0821535B2 - Exposure equipment - Google Patents
Exposure equipmentInfo
- Publication number
- JPH0821535B2 JPH0821535B2 JP62005464A JP546487A JPH0821535B2 JP H0821535 B2 JPH0821535 B2 JP H0821535B2 JP 62005464 A JP62005464 A JP 62005464A JP 546487 A JP546487 A JP 546487A JP H0821535 B2 JPH0821535 B2 JP H0821535B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- light source
- exposure
- harmonic
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lasers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は露光装置の光源に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a light source of an exposure apparatus.
ステッパー等の半導体製造用露光装置の光源としては
従来水銀ランプが用いられているが、より微細なパター
ンを焼き付けるためにｇ線（436nm）やｉ線（365nm）よ
り更に短い波長の光が要求されている。この要求を満た
す光源として最近エキシマレーザを用いた露光装置が試
作されている。Conventionally, mercury lamps have been used as the light source of exposure equipment for semiconductor manufacturing such as steppers, but light of a shorter wavelength than g-line (436 nm) or i-line (365 nm) is required to print finer patterns. ing. An exposure apparatus using an excimer laser as a light source satisfying this requirement has recently been prototyped.
現状のエキシマレーザはシステムが大型であるのに加
え、ハロゲンガスを使用するためガスの取扱いが厄介で
安全衛生上の問題が多い。また該レーザは放電による電
磁ノイズを出すため周辺機器が誤動作する可能性があ
る。さらに該レーザの出力光はショット毎のパワーのバ
ラツキが比較的大きく（〜３％）露光用光源としては問
題がある。The current excimer laser has a large system, and since halogen gas is used, handling of the gas is difficult and there are many safety and health problems. Further, since the laser emits electromagnetic noise due to electric discharge, peripheral devices may malfunction. Further, the output light of the laser has a relatively large power variation between shots (up to 3%), which is problematic as an exposure light source.
本発明はこれらの欠点を解決し、より短波長で出力安
定性が高く、しかも取扱い容易な露光装置用光源を得る
ことを目的とする。An object of the present invention is to solve these drawbacks and to obtain a light source for an exposure apparatus which has a higher output stability at a shorter wavelength and is easy to handle.
本発明は安定度の高いレーザを基本波とし、その高調
波を発生させ露光に用いることを技術的要点としてい
る。The technical point of the present invention is to use a laser having high stability as a fundamental wave and generate a harmonic wave of the fundamental wave for use in exposure.
〔第１の実施例〕 第１図は本発明の実施例であって、光源としてアルゴ
ンイオンレーザ１を用いる。[First Embodiment] FIG. 1 shows an embodiment of the present invention in which an argon ion laser 1 is used as a light source.
アルゴンイオンレーザ１のレーザ出力（可視光）２を
非線形結晶（例えばβ−BaB2O4、KDP）３に入れ第２高
調波（紫外光）４を発生させる。The laser output (visible light) 2 of the argon ion laser 1 is put into a nonlinear crystal (for example, β-BaB 2 O 4 , KDP) 3 to generate a second harmonic (ultraviolet light) 4.
ステッパー頭部のダイクロイック・ミラー５で上記の
うち紫外光のみを照明光学系６に導く。Only the ultraviolet light of the above is guided to the illumination optical system 6 by the dichroic mirror 5 on the stepper head.
このような構成にするとスペクトル幅の狭い紫外光を
露光々源にするため、分解能が上っても光学系を構成す
るレンズの材質を全て石英にすることができ、色消しレ
ンズを用いるよりも安価な光学系を組むことができる。With such a configuration, since ultraviolet light having a narrow spectral width is used as an exposure light source, even if the resolution is improved, the material of the lenses constituting the optical system can be made entirely of quartz, rather than using an achromatic lens. An inexpensive optical system can be assembled.
〔第２の実施例〕 第２図のようにスラブガラスレーザを基本光源とし、
非線形結晶を２度通すことによる第４高調波としての紫
外光を用いる。[Second Embodiment] As shown in FIG. 2, a slab glass laser is used as a basic light source,
Ultraviolet light is used as the fourth harmonic by passing the nonlinear crystal twice.
（発明の効果） 以上のように本発明によれば、ステッパー等の露光装
置の光源としてレーザ光の高調波（紫外線）を用いるの
で、スペクトル純度が高く、そのため露光装置の光学系
の材料を石英のみで構成することができ、色消し光学系
（例えば石英とフッ化カルシウム）に比べ安価であると
いう利点があるのみならず、基本波のレーザとして安定
に発振する可視域レーザを採用できるため、はじめから
紫外光でレーザ発振するエキシマレーザに比べ露光量の
制御が容易にできるという効果が期待される。As described above, according to the present invention, since the harmonics (ultraviolet rays) of laser light is used as the light source of the exposure device such as a stepper, the spectral purity is high, and therefore the material of the optical system of the exposure device is quartz. Since it can be configured with only an achromatic optical system (for example, quartz and calcium fluoride), it has the advantage of being less expensive, and since a visible laser that stably oscillates as a fundamental wave laser can be adopted, From the beginning, it is expected that the exposure amount can be controlled more easily than with an excimer laser that oscillates with ultraviolet light.
第１図は本発明の第１、第２実施例の説明図である。 第２図は本発明の第３の実施例の説明図である。 第３図は従来例の説明図である。 （主要部分の符号の説明） １……レーザ発振器 ２……基本波レーザビーム ３……第２高調波発生（SHG）結晶 ４……２倍波ビーム＋基本波ビーム ５……ダイクロイックミラー ６……照明光学系 ７……レチクル ８……投影光学系 ９……レジスト 10……ウェハー 11……ステージ 12……露光ビーム 13……レーザ光源 14……水銀ランプ光源 15……第４高調波発生結晶 16……４倍波＋２倍波＋基本波 FIG. 1 is an explanatory view of the first and second embodiments of the present invention. FIG. 2 is an explanatory diagram of the third embodiment of the present invention. FIG. 3 is an explanatory diagram of a conventional example. (Description of symbols of main parts) 1 ... Laser oscillator 2 ... Fundamental laser beam 3 ... Second harmonic generation (SHG) crystal 4 ... Second harmonic beam + fundamental beam 5 ... Dichroic mirror 6 ... … Illumination optical system 7 …… Reticle 8 …… Projection optical system 9 …… Resist 10 …… Wafer 11 …… Stage 12 …… Exposure beam 13 …… Laser light source 14 …… Mercury lamp light source 15 …… Fourth harmonic generation Crystal 16: 4th harmonic + 2nd harmonic + fundamental wave
───────────────────────────────────────────────────── フロントページの続き (72)発明者 河村 信一郎 東京都品川区西大井１丁目６番３号 日本 光学工業株式会社大井製作所内 (72)発明者 近藤 洋行 東京都品川区西大井１丁目６番３号 日本 光学工業株式会社大井製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shinichiro Kawamura 1-6-3 Nishi-oi, Shinagawa-ku, Tokyo Inside Oi Works, Japan Optical Industry Co., Ltd. (72) Inventor Hiroshi Kondo 1-6-3 Nishi-oi, Shinagawa-ku, Tokyo No. Japan Optical Industry Co., Ltd. Oi Works
Claims (1)
光装置において、その光源をレーザとし、さらに該レー
ザ光を非線形光学素子を用いて高調波としてウェハー上
に照射することを特徴とする露光装置。1. An exposure apparatus used in a semiconductor manufacturing process, wherein the light source is a laser, and the laser light is irradiated onto a wafer as a harmonic using a non-linear optical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62005464A JPH0821535B2 (en) | 1987-01-13 | 1987-01-13 | Exposure equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62005464A JPH0821535B2 (en) | 1987-01-13 | 1987-01-13 | Exposure equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63173324A JPS63173324A (en) | 1988-07-16 |
| JPH0821535B2 true JPH0821535B2 (en) | 1996-03-04 |
Family
ID=11611952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62005464A Expired - Lifetime JPH0821535B2 (en) | 1987-01-13 | 1987-01-13 | Exposure equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821535B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5838709A (en) * | 1995-06-07 | 1998-11-17 | Nikon Corporation | Ultraviolet laser source |
| KR100790334B1 (en) * | 2007-06-22 | 2008-01-03 | 주식회사 신성플랜트 | Dust Bag Filter Bag |
-
1987
- 1987-01-13 JP JP62005464A patent/JPH0821535B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63173324A (en) | 1988-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |