JPH0821551B2 - Low pressure chemical vapor deposition equipment - Google Patents
Low pressure chemical vapor deposition equipmentInfo
- Publication number
- JPH0821551B2 JPH0821551B2 JP24553089A JP24553089A JPH0821551B2 JP H0821551 B2 JPH0821551 B2 JP H0821551B2 JP 24553089 A JP24553089 A JP 24553089A JP 24553089 A JP24553089 A JP 24553089A JP H0821551 B2 JPH0821551 B2 JP H0821551B2
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- inert gas
- vapor deposition
- chemical vapor
- pressure chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004518 low pressure chemical vapour deposition Methods 0.000 title claims description 6
- 239000011261 inert gas Substances 0.000 claims description 33
- 235000012431 wafers Nutrition 0.000 claims description 30
- 230000007246 mechanism Effects 0.000 claims description 15
- 238000007664 blowing Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000009545 invasion Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010573 double replacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、減圧化学気相成長装置、特に昇温状態且つ
炉内を大気開放状態にてウェハーを入炉し、その後炉内
を減圧して成膜を行う減圧化学気相成長装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a reduced pressure chemical vapor deposition apparatus, and particularly to a method in which a wafer is put into a furnace in a temperature rising state and the inside of the furnace is open to the atmosphere, and then the inside of the furnace is depressurized. The present invention relates to a low pressure chemical vapor deposition apparatus for forming a film.
第２図に従来の減圧化学気相成長装置の断面図を示
す。同図において、炉芯管１内にキャップ３を付属した
ウェハー装填治具５に、被加工の多数の半導体ウェハー
６をセットし、炉口部から入炉し、炉口をキャップ３で
密閉し、キャップ３に設けてある反応ガス導入管４から
反応ガスを導入し、ウェハー６の表面に前記反応ガスの
化学反応により所望の被膜を成長させる。また、ウェハ
ー入炉時には、炉口の反対側の炉後端側に設けている不
活性ガス導入管のバルブ８を開いて、炉後端側から炉口
側への不活性ガスの流れをつくって炉内への大気の浸入
を防止している。なお、図において、２は炉内を高温に
するための加熱ヒータ、７は炉内圧力制御用バルブ、10
は排気部である。FIG. 2 shows a sectional view of a conventional low pressure chemical vapor deposition apparatus. In the figure, a large number of semiconductor wafers 6 to be processed are set on a wafer loading jig 5 with a cap 3 attached to the furnace core tube 1, the furnace is opened from the furnace, and the furnace is sealed with the cap 3. A reaction gas is introduced from a reaction gas introduction pipe 4 provided in the cap 3, and a desired film is grown on the surface of the wafer 6 by a chemical reaction of the reaction gas. Further, at the time of entering the wafer, the valve 8 of the inert gas introduction pipe provided on the furnace rear end side opposite to the furnace opening is opened to create a flow of the inert gas from the furnace rear end side to the furnace opening side. The atmosphere is prevented from entering the furnace. In the figure, 2 is a heater for raising the temperature inside the furnace, 7 is a valve for controlling the pressure in the furnace, and 10 is a valve.
Is an exhaust part.
上述した従来の減圧化学気相成長装置では、入炉が成
膜時に近い高温状態で行われ、且つ大気開放状態で行わ
れる為、大気中の酸素が炉内に侵入し、ウェハー表面が
入炉時に徐々に酸化される。そこで、この酸化を防ぐた
めに、炉芯管密閉用のキャップ３を脱去し開口すると同
時に、不活性ガス導入用バルブ８を開けて、炉後端側か
ら不活性ガスを導入しているが、炉口の開口面積が非常
に大きいため、大気の侵入を十分には防ぎ切れなかっ
た。また入炉の際ウェハー面は炉芯管軸方向に対し、垂
直またはほぼ垂直に近い状態にあり、炉後端側から導入
する不活性ガスの流れ方向をさえぎる状態となり、炉内
壁付近はある程度不活性ガスにて置換されるが、各ウェ
ハー間については大気が停留したままの状態で炉内に持
込まれ、やはりウェハー表面が酸化されてしまうという
欠点がある。In the above-described conventional low pressure chemical vapor deposition apparatus, since the furnace is heated at a high temperature close to that at the time of film formation and is open to the atmosphere, oxygen in the atmosphere enters the furnace and the wafer surface is exposed to the furnace. Sometimes gradually oxidized. Therefore, in order to prevent this oxidation, the cap 3 for sealing the furnace core tube is removed and opened, and at the same time, the inert gas introduction valve 8 is opened to introduce the inert gas from the rear end side of the furnace. Since the opening area of the furnace mouth was very large, it was not possible to sufficiently prevent the invasion of the atmosphere. When entering the furnace, the wafer surface is perpendicular or nearly perpendicular to the axial direction of the furnace core tube, which interrupts the flow direction of the inert gas introduced from the rear end of the furnace, and the vicinity of the inner wall of the furnace is somewhat uneven. Although it is replaced with an active gas, there is a drawback in that the atmosphere between the wafers is brought into the furnace while the atmosphere remains stationary and the wafer surface is also oxidized.
本発明の減圧化学気相成長装置は、炉芯管を用いた減
圧化学気相成長装置において、装填治具にセットされて
炉芯管に入炉される多数の半導体ウェハ間の停留大気を
不活性ガスにて置換するためのガス吹出し及び排気機構
であって、炉芯管口近傍に設けられた第１の不活性ガス
吹出し機構及び第１の不活性ガス吹出し機構の近くに設
けられた第２の不活性ガス吹出し機構と、第１及び第２
の不活性ガス吹出し機構に対向してそれぞれ設置され、
半導体ウェハ間を通過してきたガスを排気する第１及び
第２の排気機構とを備えていることを特徴とする。The reduced pressure chemical vapor deposition apparatus of the present invention is a reduced pressure chemical vapor deposition apparatus using a furnace core tube, and is capable of keeping a stable atmosphere between a large number of semiconductor wafers set in a loading jig and put into the furnace core tube. A gas blowing and exhausting mechanism for replacing with an active gas, the first inert gas blowing mechanism provided in the vicinity of the furnace core tube opening, and the first inert gas blowing mechanism provided near the first inert gas blowing mechanism. Second inert gas blowing mechanism, first and second
Installed opposite to the inert gas blowing mechanism of
The present invention is characterized by including first and second exhaust mechanisms for exhausting gas that has passed between semiconductor wafers.
以上の構成により、本発明の減圧化学気相成長装置
は、炉芯管開口部付近に不活性ガス吹き出し部と排気部
を吹活性ガスの流れが各ウェハー面とほぼ平行となるよ
うに対に設けて、炉口直前にて各ウェハー間の停留大気
を不活性ガスにて置換するようにしている。更に、この
ようにしても不活性ガス吹き出しの際に同時に大気を巻
き込み、各ウェハー間に微量の大気が停留してしまうの
で、炉内の炉口付近においても不活性ガスの吹き出し部
と排気部を設けた二重の不活性ガス置換構造としてい
る。そのため、従来見逃されていた各ウェハー間に停留
する酸素も完全に不活性ガスで置換される。With the above configuration, the reduced pressure chemical vapor deposition apparatus of the present invention is a pair of blown inert gas blowing portion and exhaust portion in the vicinity of the furnace core tube opening so that the flow of the active gas is substantially parallel to each wafer surface. The stationary atmosphere between the wafers is replaced with an inert gas immediately before the furnace opening. Further, even in this case, the atmosphere is entrained at the same time when the inert gas is blown, and a small amount of the atmosphere is retained between the wafers. The double inert gas replacement structure is provided. Therefore, the oxygen that has remained between the wafers, which has been overlooked in the past, is completely replaced with the inert gas.
次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.
第１図は本発明の一実施例の断面図である。第１図に
おいて、炉芯管１は、ヒータ２により加熱され、ウェハ
ー６の入炉時は、キャップ３がウェハー装填治具５と共
に上方に移動し、炉芯管開口端を密閉する。そして膜成
長時には反応ガス導入部４から反応ガスを導入し、炉内
圧力は、炉内圧力制御用バルブ７により調整する。ここ
でウェハー入炉（上昇）時には、炉内圧力制御用バルブ
７は閉じており、炉内への大気侵入を防ぐための不活性
ガス導入用バルブ８が開き不活性ガスが矢印に沿って炉
内を開口端に向かって流れていく。また同時に、炉外不
活性ガス吹き出し部９から不活性ガスを入炉中のウェハ
ーに向けて吹き出し、その延長線上に設置された炉外排
気部10から排気し、炉口付近の大気を若干巻き込みなが
らも各ウェハー間の大気を不活性ガスにある程度置換す
る。さらに炉内不活性ガス吹き出し部11から同様に不活
性ガスを吹き出し、その延長線上に設置された炉内排気
部12で排気して各ウェハー間に僅かに停留した大気を不
活性ガスにより置換する二重の置換機構を設けている。FIG. 1 is a sectional view of an embodiment of the present invention. In FIG. 1, the furnace core tube 1 is heated by the heater 2, and when the wafer 6 is charged into the furnace, the cap 3 moves upward together with the wafer loading jig 5 to close the open end of the furnace core tube. Then, during the film growth, the reaction gas is introduced from the reaction gas introduction unit 4, and the furnace pressure is adjusted by the furnace pressure control valve 7. At the time of entering the wafer (increase), the in-furnace pressure control valve 7 is closed, and the inert gas introduction valve 8 for preventing the invasion of the atmosphere into the furnace is opened, so that the inert gas flows in the furnace along the arrow. It flows through the inside toward the open end. At the same time, the inert gas blow-out part 9 outside the furnace blows out an inert gas toward the wafer in the furnace, and is exhausted from the outside-exhaust exhaust part 10 installed on the extension line thereof, and the atmosphere near the furnace mouth is slightly entrained. However, the atmosphere between the wafers is replaced with an inert gas to some extent. Further, an inert gas is similarly blown from the in-furnace inert gas blowing section 11, and is exhausted by the in-furnace exhaust section 12 installed on the extension line to replace the atmosphere slightly retained between the wafers with the inert gas. A double replacement mechanism is provided.
以上説明したように本発明は、炉後端側から不活性ガ
スを導入し、炉口直前部分と炉内の炉口付近とに二重に
不活性ガス置換機構を有することにより、ウェハー入炉
時の炉内への酸素持ち込み量を大幅に抑えることが可能
となり、更に各ウェハー間の停留大気（特に酸素）も同
様に抑えられるため、入炉時のウェハー表面の酸化が十
分抑えられるという効果がある。従って、例えばシリコ
ンウェハー上に多結晶シリコンを成長させて、両者の導
通をとる場合、入炉時の酸素の侵入により二酸化ケイ素
がシリコンウェハー表面と多結晶シリコンの間に形成さ
れ、その間の導通を妨げてしまうという問題が解決でき
る。INDUSTRIAL APPLICABILITY As described above, the present invention introduces an inert gas from the rear end side of the furnace, and has a double inert gas replacement mechanism in a portion immediately before the furnace opening and in the vicinity of the furnace opening in the furnace, so that the wafer entrance It is possible to significantly reduce the amount of oxygen carried into the furnace at the time, and also to suppress the non-retained atmosphere (especially oxygen) between each wafer as well, so that the oxidation of the wafer surface at the time of entering the furnace can be sufficiently suppressed. There is. Therefore, for example, when polycrystalline silicon is grown on a silicon wafer to establish electrical continuity between them, silicon dioxide is formed between the surface of the silicon wafer and polycrystalline silicon due to the invasion of oxygen at the time of entering the furnace, and electrical continuity between them is maintained. The problem of hindering can be solved.
第１図は本発明の一実施例の断面図、第２図は従来の減
圧化学気相成長装置の断面図である。 １……炉芯管、２……ヒータ、３……キャップ、４……
反応ガス導入部、５……ウェハー装填治具、６……ウェ
ハー、７……炉内圧力制御用バルブ、８……不活性ガス
導入用バルブ、９……炉外不活性ガス吹き出し部、10…
…炉外排気部、11……炉内不活性ガス吹き出し部、12…
…炉内排気部。FIG. 1 is a sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional low pressure chemical vapor deposition apparatus. 1 ... Furnace core tube, 2 ... Heater, 3 ... Cap, 4 ...
Reaction gas introduction part, 5 ... Wafer loading jig, 6 ... Wafer, 7 ... In-furnace pressure control valve, 8 ... Inert gas introduction valve, 9 ... Out-furnace inert gas blowing part, 10 …
… Exhaust part outside the furnace, 11 …… Inert gas blowing part inside the furnace, 12…
… Exhaust part in the furnace.
Claims (1)
いて、装填治具にセットされて前記炉芯管に入炉される
多数の半導体ウェハ間の停留大気を不活性ガスにて置換
するためのガス吹出し及び排気機構であって、前記炉芯
管口近傍に設けられた第１の不活性ガス吹出し機構及び
前記第１の不活性ガス吹出し機構の近くに設けられた第
２の不活性ガス吹出し機構と、前記第１及び第２の不活
性ガス吹出し機構に対向してそれぞれ設置され、前記半
導体ウェハ間を通過してきたガスを排気する第１及び第
２の排気機構とを備えていることを特徴とする減圧化学
気相成長装置。1. A depressurized chemical vapor deposition apparatus using a furnace core tube, wherein a stationary atmosphere between a large number of semiconductor wafers set in a loading jig and put into the furnace core tube is replaced with an inert gas. A first inert gas blowing mechanism provided in the vicinity of the furnace core tube opening and a second inert gas blowing mechanism provided near the first inert gas blowing mechanism. An active gas blowout mechanism and first and second exhaust mechanisms that are respectively installed to face the first and second inert gas blowout mechanisms and exhaust the gas that has passed between the semiconductor wafers. A low pressure chemical vapor deposition apparatus characterized in that
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24553089A JPH0821551B2 (en) | 1989-09-20 | 1989-09-20 | Low pressure chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24553089A JPH0821551B2 (en) | 1989-09-20 | 1989-09-20 | Low pressure chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03106018A JPH03106018A (en) | 1991-05-02 |
| JPH0821551B2 true JPH0821551B2 (en) | 1996-03-04 |
Family
ID=17135063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24553089A Expired - Lifetime JPH0821551B2 (en) | 1989-09-20 | 1989-09-20 | Low pressure chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0821551B2 (en) |
-
1989
- 1989-09-20 JP JP24553089A patent/JPH0821551B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03106018A (en) | 1991-05-02 |
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