JPH0822469B2 - Aluminum-iron / nickel alloy-solder clad material and method of manufacturing IC device using the same - Google Patents
Aluminum-iron / nickel alloy-solder clad material and method of manufacturing IC device using the sameInfo
- Publication number
- JPH0822469B2 JPH0822469B2 JP61163287A JP16328786A JPH0822469B2 JP H0822469 B2 JPH0822469 B2 JP H0822469B2 JP 61163287 A JP61163287 A JP 61163287A JP 16328786 A JP16328786 A JP 16328786A JP H0822469 B2 JPH0822469 B2 JP H0822469B2
- Authority
- JP
- Japan
- Prior art keywords
- solder
- aluminum
- iron
- clad material
- nickel alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/048—Mechanical treatments, e.g. punching, cutting, deforming or cold welding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/01—Manufacture or treatment
- H10W70/04—Manufacture or treatment of leadframes
- H10W70/041—Connecting or disconnecting interconnections to or from leadframes, e.g. connecting bond wires or bumps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/456—Materials
- H10W70/457—Materials of metallic layers on leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/464—Additional interconnections in combination with leadframes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/011—Apparatus therefor
- H10W72/0116—Apparatus for manufacturing strap connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/521—Structures or relative sizes of bond wires
- H10W72/522—Multilayered bond wires, e.g. having a coating concentric around a core
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
- Wire Bonding (AREA)
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、特にIC基板等に利用するアルミニウム−鉄
・ニッケル合金−半田クラッド材およびこれを用いたIC
装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to an aluminum-iron / nickel alloy-solder clad material particularly used for an IC substrate and an IC using the same.
The present invention relates to a method of manufacturing a device.
〈従来技術およびその問題点〉 第６図に示すように、IC装置に用いられるアルミナ基
板（IC基板）20は、例えばCu等から成る放熱板21上に半
田材22にて接着されている。このアルミナ基板20上に
は、略中央部に半導体素子搭載部として、一般に、モリ
ブデン、タングステン等の金属層23が、該金属層23の周
囲には端子部24がそれぞれ半田付けされている。そし
て、金属層23上に半田付けされたIC素子25と端子部24と
をボンディングワイヤ26にてボンディングしている。<Prior Art and Problems Thereof> As shown in FIG. 6, an alumina substrate (IC substrate) 20 used in an IC device is bonded to a heat dissipation plate 21 made of, for example, Cu with a solder material 22. A metal layer 23 such as molybdenum or tungsten is generally soldered on the alumina substrate 20 as a semiconductor element mounting portion at a substantially central portion, and a terminal portion 24 is soldered around the metal layer 23. Then, the IC element 25 soldered on the metal layer 23 and the terminal portion 24 are bonded by a bonding wire 26.
従来、端子部24としてCu層を、ボンディングワイヤ26
としてAu線を用いていた。Conventionally, a Cu layer is used as the terminal portion 24 and a bonding wire 26
Was using the Au wire.
しかし、コスト低減化のため、ボンディングワイヤ26
にAu線に替わってAl線を使用するようになり、これに伴
って端子部24もAl層を用いるようになってきた。その理
由は、Al線（ワイヤ26）をCu層（端子部24）に接着する
と、この接着部に脆性を有するCu-Al合金層が形成さ
れ、金属学的に問題があるからである。However, to reduce costs, the bonding wire 26
Al wires have come to be used instead of Au wires, and with this, the terminal portion 24 has also come to use an Al layer. The reason is that when the Al wire (wire 26) is adhered to the Cu layer (terminal portion 24), a Cu—Al alloy layer having brittleness is formed in this adhered portion, which causes a metallurgical problem.
ところで、下記に示すように、AlはCuに比べ熱膨張係
数がきわめて大きいため、Al層（以下Al端子部という）
24をアルミナ基板20上に直接半田付けにて接着すること
は大いに問題がある。By the way, as shown below, Al has a much larger coefficient of thermal expansion than Cu, so the Al layer (hereinafter referred to as the Al terminal portion)
Directly soldering the 24 onto the alumina substrate 20 is very problematic.
熱膨張係数（×10-6／℃） Al :23 Cu :16.7 インバー :0〜２ Fe-42Ni :4.4 アルミナ :6.0〜6.5 また、IC装置への実装作業においても、従来は、Al端
子部24とアルミナ基板20との間にパッド状に成形された
半田シート22′を挾み、この半田シート22′によってAl
端子部24とアルミナ基板20とを接着させている。Coefficient of thermal expansion (× 10 -6 / ℃) Al: 23 Cu: 16.7 Invar: 0 to 2 Fe-42Ni: 4.4 Alumina: 6.0 to 6.5 Also, when mounting on IC devices, the conventional Al terminal 24 The solder sheet 22 'formed in the shape of a pad is sandwiched between the solder sheet 22' and the alumina substrate 20.
The terminal portion 24 and the alumina substrate 20 are bonded together.
すなわち、半田シート22′をAl端子部24の形状に合わ
せて別工程にて切断、成形しなければならなかった。さ
らに、このように切断、成形した半田シート22′を、Al
端子部24ごとにアルミナ基板20上に介在させなければな
らず、手間がかかる等の問題があった。That is, the solder sheet 22 'had to be cut and molded in a separate process in accordance with the shape of the Al terminal portion 24. Further, the solder sheet 22 ′ cut and molded in this way is
Each terminal portion 24 has to be interposed on the alumina substrate 20, which causes a problem that it takes time and the like.
また、Al端子部24と半田シート22′とをそれぞれ別途
保管、管理しなければならず、Al端子部24は合金面が酸
化、汚染されやすいので組立作業時に酸洗等の前処理が
必要であり、半田シート22′も保管時に変色や損傷のお
それ等があり、共に保管およびその取扱いが面倒であ
り、作業工程が複雑化するという問題があった。In addition, the Al terminal portion 24 and the solder sheet 22 'must be separately stored and managed, and since the alloy surface of the Al terminal portion 24 is easily oxidized and contaminated, pretreatment such as pickling is required during assembly work. However, the solder sheet 22 'may also be discolored or damaged during storage, and the storage and handling of the solder sheet 22' are both troublesome and the working process is complicated.
〈発明の目的〉 本発明は上記事情に鑑みてなされたもので、上記従来
技術の問題点を解消し、端子部の形成が容易でしかも端
子部の機械的強度を十分確保することができると共に作
業工程が簡略化され、かつアルミナ基板への実装効率を
大幅に向上させるアルミニウム−鉄・ニッケル合金−半
田クラッド材およびこれを用いたIC装置の製造方法を提
供することを目的とする。<Purpose of the Invention> The present invention has been made in view of the above circumstances, solves the problems of the above-described conventional techniques, can easily form the terminal portion, and can sufficiently secure the mechanical strength of the terminal portion. An object of the present invention is to provide an aluminum-iron / nickel alloy-solder clad material that simplifies the work process and significantly improves the mounting efficiency on an alumina substrate, and a method for manufacturing an IC device using the same.
〈発明の構成〉 本発明の第１の態様によれば、鉄・ニッケル合金材の
一方の面にアルミニウム材を、他方の面に半田材をそれ
ぞれ被着して成ることを特徴とするアルミニウム−鉄・
ニッケル合金−半田クラッド材が提供される。<Structure of Invention> According to the first aspect of the present invention, an aluminum-nickel alloy material is coated with an aluminum material on one surface and a solder material on the other surface. iron·
A nickel alloy-solder clad material is provided.
本発明の第２の態様によれば、アルミナ基板上に半導
体素子を接着する部位を形成すると共に該部位の周囲に
前記半導体素子とボンディングワイヤにより接続される
端子部を形成する方法において、アルミニウム−鉄・ニ
ッケル合金−半田クラッド材を、その半田面をアルミナ
基板に向けて加熱圧着することにより端子部を形成する
ことを特徴とするIC装置の製造方法が提供される。According to a second aspect of the present invention, there is provided a method of forming a portion for adhering a semiconductor element on an alumina substrate and forming a terminal portion connected to the semiconductor element by a bonding wire on the periphery of the portion. A method for manufacturing an IC device is provided, in which an iron / nickel alloy-solder clad material is thermocompression-bonded with its solder surface facing an alumina substrate to form a terminal portion.
以下、本発明の好適実施例について、第１〜第５図に
基づいて説明する。Hereinafter, a preferred embodiment of the present invention will be described with reference to FIGS.
第１図は本発明の第１の態様に係るアルミニウム−鉄
・ニッケル合金−半田クラッド材の模式縦断面図で、鉄
・ニッケル合金材（一般にFe-42％Ni合金材）を母材２
とし、一方の面にアルミニウム材１を、他方の面に半田
材３をそれぞれ重ね合わせ、被着したものである。FIG. 1 is a schematic vertical sectional view of an aluminum-iron / nickel alloy-solder clad material according to the first embodiment of the present invention. An iron / nickel alloy material (generally Fe-42% Ni alloy material) is used as a base material 2
The aluminum material 1 is superposed on one surface and the solder material 3 is superposed on the other surface, respectively.
これら各材の被着方法は、以下に述べる第２〜第４図
に示す製造方法によって製造される。The method of depositing each of these materials is manufactured by the manufacturing method shown in FIGS. 2 to 4 described below.
まず、第１の製造方法によれば、第２図に示すよう
に、母材送り出し装置４から母材（例えばFe-42％Ni合
金材）２を、アルミニウム送り出し装置５からアルミニ
ウム材１を、半田材送り出し装置６から半田材３をそれ
ぞれ圧着用ロール（圧着手段）７へ送り出し、この圧着
用ロール７の圧延上ロール7aおよび圧延下ロール7bにて
アルミニウム材１−母材２−半田材３の順に３層をなす
ように圧着または圧延圧着し、アルミニウム−鉄・ニッ
ケル合金−半田クラッド材（以下３層クラッド材とい
う）９を製造する。First, according to the first manufacturing method, as shown in FIG. 2, the base material (a Fe-42% Ni alloy material, for example) 2 is fed from the base material feeding device 4, the aluminum material 1 is fed from the aluminum feeding device 5. The solder material 3 is sent out from the solder material feeding device 6 to the crimping rolls (crimping means) 7, and the aluminum material 1-base material 2-solder material 3 is used by the rolling upper roll 7a and rolling lower roll 7b of the crimping roll 7. By pressure bonding or rolling pressure bonding so as to form three layers in this order, an aluminum-iron / nickel alloy-solder clad material (hereinafter referred to as a three-layer clad material) 9 is manufactured.
そしてこの３層クラッド材９を、クラッド材巻取装置
（巻取手段）10にて巻取る。Then, the three-layer clad material 9 is wound by a clad material winding device (winding means) 10.
このように、各部材が圧着用ロール７にて圧着または
圧延圧着されて瞬時に３層クラッド材９が得られる。In this way, the respective members are pressure-bonded or roll-pressed by the pressure-bonding roll 7 to instantly obtain the three-layer clad material 9.
次に第２の製造方法によれば、第３図に示すように、
すでに製品化され、市販されているアルミニウム−鉄・
ニッケル合金材（以下２層クラッド材という）12を用
い、この２層クラッド材12を送り出し装置11から、半田
材３を半田材送り出し装置６からそれぞれ圧着用ロール
７に送り出し、この圧着用ロール７にて、２層クラッド
材12の鉄・ニッケル合金面側へ半田材３を圧着または圧
延圧着して３層クラッド材９を製造し、クラッド材巻取
装置10にて巻取る。Next, according to the second manufacturing method, as shown in FIG.
Aluminum-Iron-commercialized and commercially available
A nickel alloy material (hereinafter referred to as a two-layer clad material) 12 is used, and the two-layer clad material 12 is sent out from a sending device 11 and a solder material 3 from a solder material sending device 6 to a crimping roll 7, respectively. Then, the solder material 3 is pressure-bonded or roll-pressed to the iron / nickel alloy surface side of the two-layer clad material 12 to manufacture a three-layer clad material 9, which is wound by the clad material winding device 10.
これによれば、第１の製造方法に比べ、製造設備の低
減化が図れる。According to this, compared with the first manufacturing method, the manufacturing equipment can be reduced.
さらに第３の製造方法によれば、第４図に示すよう
に、第２の製造方法の場合と同様に、すでに製品化さ
れ、市販されているアルミニウム−鉄・ニッケル合金材
（２層クラッド材）12を用い、この２層クラッド材12を
送り出し装置11から半田めっき装置13へ送り出し、この
半田めっき装置13内にて２層クラッド材12の鉄・ニッケ
ル合金面へ半田めっきを施して３層クラッド材９を製造
し、これをクラッド材巻取装置10にて巻取る。Further, according to the third manufacturing method, as shown in FIG. 4, as in the case of the second manufacturing method, an aluminum-iron / nickel alloy material (a two-layer clad material) that has already been commercialized and is commercially available. ) 12 is used to feed the two-layer clad material 12 from the feeding device 11 to the solder plating device 13, and in the solder plating device 13, the iron / nickel alloy surface of the two-layer clad material 12 is plated with solder to form three layers. The clad material 9 is manufactured and wound by the clad material winding device 10.
この第３の製造方法によれば、前記第１、第２の製造
方法と異なり、圧着または圧延圧着によらずめっきを施
すことによって半田の層を形成するため、装置の簡略化
や、薄肉かつ均一な半田層、圧延歪のない形状の安定し
たクラッド材を得ることができる等の効果がある。According to the third manufacturing method, unlike the first and second manufacturing methods, the solder layer is formed by plating without using pressure bonding or rolling pressure bonding, which simplifies the device and reduces the thickness of the device. It is possible to obtain a uniform clad material having a uniform solder layer and a stable shape without rolling distortion.
このようにして製造された３層クラッド材９を第５図
に示すようにIC装置に実装する。同図中、第６図と同一
部分は同一符号を付してその説明を省略する。The three-layer clad material 9 thus manufactured is mounted on an IC device as shown in FIG. 6, those parts which are the same as those corresponding parts in FIG. 6 are designated by the same reference numerals, and a description thereof will be omitted.
すなわち、アルミナ基板20上の所定箇所に端子部を形
成するにおいて、３層クラッド材９を、半田面をアルミ
ナ基板20に向けて載置し、加熱接着すれば、そのまま端
子部が形成されるので、実装効率が大幅に向上する。ま
た３層クラッド材９は平坦度が良好なので、接着性も向
上し、製品品質の大幅な向上を図ることができる。That is, in forming a terminal portion at a predetermined location on the alumina substrate 20, if the three-layer clad material 9 is placed with the solder surface facing the alumina substrate 20 and heat-bonded, the terminal portion is formed as it is. , Mounting efficiency is greatly improved. Further, since the three-layer clad material 9 has good flatness, the adhesiveness is also improved, and the product quality can be greatly improved.
さらに、３層クラッド材９の母材として鉄・ニッケル
合金材２を用いているが、これはアルミニウム材１に対
しても、またアルミナ基板20に対してもそれぞれ熱膨張
係数の整合性を有するので、端子部の機械的強度を十分
に確保することができるため、製品品質が向上する。Further, although the iron / nickel alloy material 2 is used as the base material of the three-layer clad material 9, this has a matching coefficient of thermal expansion with both the aluminum material 1 and the alumina substrate 20. Therefore, since the mechanical strength of the terminal portion can be sufficiently secured, the product quality is improved.
〈発明の効果〉 以上詳述したように本発明によれば、アルミニウム−
鉄・ニッケル合金−半田クラッド材（３層クラッド材）
をIC装置のアルミナ基板上に加熱接着することによって
端子部を形成することができるので、 （１）アルミナ基板上に３層クラッド材の半田面を向け
て載置後加熱接着するのみで端子部が形成されるので、
大幅な実装効率が図れる。また、アルミナ基板上への位
置決めおよび手間等が簡略化できる。<Effects of the Invention> As described in detail above, according to the present invention, aluminum-
Iron / Nickel alloy-Solder clad material (3-layer clad material)
Since the terminal part can be formed by heating and bonding to the alumina substrate of the IC device, (1) The terminal part is simply heat-bonded after placing the solder surface of the three-layer clad material on the alumina substrate. Is formed,
Significant mounting efficiency can be achieved. In addition, positioning on the alumina substrate and labor can be simplified.
（２）あらかじめ鉄・ニッケル合金面に半田材が完全に
接合されているため実装効率の向上と共に、アルミナ基
板への接着の信頼性が向上する。(2) Since the solder material is completely bonded to the iron / nickel alloy surface in advance, the mounting efficiency is improved and the reliability of adhesion to the alumina substrate is improved.
（３）半田材があらかじめ端子部に接合されているた
め、半田材を別途シート状に切断する手間や別途保管等
の面倒が省け、経済的利点が大きい。(3) Since the solder material is bonded to the terminal portion in advance, the trouble of separately cutting the solder material into a sheet shape and the trouble of separate storage can be saved, and the economical advantage is great.
（４）本発明により得られる３層クラッド材は、プレス
によりパッド状に打抜き可能であり、保管、取扱い等の
面で容易である。同時にコスト面でも安価にでき、経済
性が向上する。(4) The three-layer clad material obtained by the present invention can be punched into a pad shape by pressing, and is easy to store and handle. At the same time, the cost can be reduced and the economic efficiency is improved.
の平坦度は、プレス打抜き状のため良好であり、これ
により実装上、接着性の確保向上および製品品質の大幅
な向上が図れる。Has a good flatness due to the punched shape, which can improve the securing of adhesiveness and the product quality in terms of mounting.
等の効果がある。And so on.
第１図は本発明により得られるアルミニウム−鉄・ニッ
ケル合金−半田クラッド材の縦断面図である。 第２図、第３図および第４図はそれぞれ本発明のアルミ
ニウム−鉄・ニッケル合金−半田クラッド材の製造方法
を示すフロー図である。 第５図は本発明により得られるIC装置の構造を示す要部
断面図である。 第６図は従来のIC装置の構造を示す要部断面図である。 符号の説明 １……アルミニウム材、２……鉄・ニッケル合金材、３
……半田材、４……母材送り出し装置、５……アルミニ
ウム材送り出し装置、６……半田材送り出し装置、７…
…圧着用ロール（圧着手段）、９……アルミニウム−鉄
・ニッケル合金−半田クラッド材（３層クラッド材）、
10……クラッド材巻取装置（巻取手段）、12……アルミ
ニウム−鉄・ニッケル合金材、13……半田めっき装置、
20……アルミナ基板、21……放熱板、22……半田材、23
……金属層（半導体素子搭載部）、25……IC素子、26…
…ボンディングワイヤFIG. 1 is a vertical sectional view of an aluminum-iron / nickel alloy-solder clad material obtained by the present invention. 2, 3 and 4 are flow charts showing the method for producing the aluminum-iron / nickel alloy-solder clad material of the present invention. FIG. 5 is a cross-sectional view of an essential part showing the structure of the IC device obtained by the present invention. FIG. 6 is a cross-sectional view of an essential part showing the structure of a conventional IC device. Explanation of symbols 1 ... Aluminum material, 2 ... Iron / nickel alloy material, 3
...... Solder material, 4 …… Base material feeding device, 5 …… Aluminum material feeding device, 6 …… Solder material feeding device, 7 ・ ・ ・
... Roll for crimping (crimping means), 9 ... Aluminum-iron / nickel alloy-solder clad material (three-layer clad material),
10 …… Clad material winding device (winding means), 12 …… Aluminum-iron / nickel alloy material, 13 …… Solder plating device,
20: Alumina substrate, 21: Heat sink, 22: Solder material, 23
…… Metal layer (semiconductor element mounting part), 25 …… IC element, 26…
… Bonding wire
───────────────────────────────────────────────────── フロントページの続き (72)発明者 佐藤 伸雄 茨城県日立市助川町３丁目１番１号 日立 電線株式会社電線工場内 (72)発明者 阿部 雅彦 茨城県日立市助川町３丁目１番１号 日立 電線株式会社電線工場内 (56)参考文献 特開 昭61−266173（ＪＰ，Ａ) 特開 昭61−176485（ＪＰ，Ａ) 特公 平３−1116（ＪＰ，Ｂ２) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Nobuo Sato Inventor No. 3-1-1 Sukegawa-cho, Hitachi City, Ibaraki Hitachi Cable Company Ltd. (72) Inventor Masahiko Abe 3-1-1 Sukegawa-cho, Hitachi City, Ibaraki Prefecture No. 1 in the electric wire factory of Hitachi Cable, Ltd. (56) Reference JP-A-61-266173 (JP, A) JP-A-61-176485 (JP, A) JP-B 3-1116 (JP, B2)
Claims (2)
ウム材を、他方の面に半田材をそれぞれ被着して成るこ
とを特徴とするアルミニウム−鉄・ニッケル合金−半田
クラッド材。1. An aluminum-iron / nickel alloy-solder clad material comprising an iron / nickel alloy material coated with an aluminum material on one surface and a solder material on the other surface.
位を形成すると共に該部位の周囲に前記半導体素子とボ
ンディングワイヤにより接続される端子部を形成する方
法において、アルミニウム−鉄・ニッケル合金−半田ク
ラッド材を、その半田面をアルミナ基板に向けて加熱圧
着することにより端子部を形成することを特徴とするIC
装置の製造方法。2. A method for forming a portion for adhering a semiconductor element on an alumina substrate and forming a terminal portion connected to the semiconductor element by a bonding wire around the portion, wherein aluminum-iron / nickel alloy-solder is used. An IC characterized in that a terminal portion is formed by thermocompression-bonding a clad material with its solder surface facing an alumina substrate.
Device manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61163287A JPH0822469B2 (en) | 1986-07-11 | 1986-07-11 | Aluminum-iron / nickel alloy-solder clad material and method of manufacturing IC device using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61163287A JPH0822469B2 (en) | 1986-07-11 | 1986-07-11 | Aluminum-iron / nickel alloy-solder clad material and method of manufacturing IC device using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6320189A JPS6320189A (en) | 1988-01-27 |
| JPH0822469B2 true JPH0822469B2 (en) | 1996-03-06 |
Family
ID=15770951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61163287A Expired - Lifetime JPH0822469B2 (en) | 1986-07-11 | 1986-07-11 | Aluminum-iron / nickel alloy-solder clad material and method of manufacturing IC device using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0822469B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254685A (en) * | 2010-04-14 | 2011-11-23 | Tdk株式会社 | Electrochemical device and manufacturing method thereof, circuit board and housing tray |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5131307B2 (en) * | 2010-04-14 | 2013-01-30 | Ｔｄｋ株式会社 | Electrochemical device and circuit board |
| JP5131305B2 (en) * | 2010-04-14 | 2013-01-30 | Ｔｄｋ株式会社 | Electrochemical device and circuit board |
| JP5131306B2 (en) * | 2010-04-14 | 2013-01-30 | Ｔｄｋ株式会社 | Electrochemical device and manufacturing method thereof, circuit board, and storage tray |
| JP5131308B2 (en) * | 2010-04-14 | 2013-01-30 | Ｔｄｋ株式会社 | Electrochemical device and circuit board |
-
1986
- 1986-07-11 JP JP61163287A patent/JPH0822469B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254685A (en) * | 2010-04-14 | 2011-11-23 | Tdk株式会社 | Electrochemical device and manufacturing method thereof, circuit board and housing tray |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6320189A (en) | 1988-01-27 |
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