JPH0822794B2 - Crystal growth method - Google Patents
Crystal growth methodInfo
- Publication number
- JPH0822794B2 JPH0822794B2 JP14999088A JP14999088A JPH0822794B2 JP H0822794 B2 JPH0822794 B2 JP H0822794B2 JP 14999088 A JP14999088 A JP 14999088A JP 14999088 A JP14999088 A JP 14999088A JP H0822794 B2 JPH0822794 B2 JP H0822794B2
- Authority
- JP
- Japan
- Prior art keywords
- ampoule
- initial sample
- sample
- crystal growth
- growth method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002109 crystal growth method Methods 0.000 title claims description 9
- 239000003708 ampul Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 230000005486 microgravity Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 229910000990 Ni alloy Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は微小重力下における結晶の成長法に関し、ガ
スタービンなどに使用される高温材料、太陽熱発電など
に使用されるエネルギ変換材、半導体素材などのような
種々の結晶を微小重力下で結晶成長させる方法に関す
る。TECHNICAL FIELD The present invention relates to a crystal growth method under microgravity, and relates to a high temperature material used for a gas turbine or the like, an energy conversion material used for solar thermal power generation, or a semiconductor material. The present invention relates to a method for growing various crystals such as, for example, under microgravity.
従来の微小重力下における結晶成長法の一態様を第4
図〜第6図によつて説明する。The fourth aspect of the conventional crystal growth method under microgravity
This will be described with reference to FIGS.
第4図はNi合金を温度勾配炉を用い、いわゆるブリツ
ジマン方式で微小重力(以下、μGと略す)下で製造す
る態様の説明図である。第4図において、1はアンプ
ル、2はカートリツジ、3は電気炉、4は冷却器であ
る。第5図は第4図の一部拡大図でアンプル1まわりの
説明図であり、Ni合金試料は先ず焼結法により円筒状に
固形化され、第5図に示すように、初期試料5としてア
ンプル1内に充填される。この時の試料5直径diはアン
プル1内径にできるだけ近い寸法とする。第4図に示す
ように、アンプル1は石英材を用い、更にセラミツクス
製のカートリツジ2に装填される。FIG. 4 is an explanatory view of a mode in which a Ni alloy is manufactured under microgravity (hereinafter abbreviated as μG) by a so-called Britzmann method using a temperature gradient furnace. In FIG. 4, 1 is an ampoule, 2 is a cartridge, 3 is an electric furnace, and 4 is a cooler. FIG. 5 is an enlarged view of a part of FIG. 4 and is an explanatory view around the ampoule 1. The Ni alloy sample is first solidified into a cylindrical shape by a sintering method, and as shown in FIG. It is filled in the ampoule 1. At this time, the diameter di of the sample 5 should be as close as possible to the inner diameter of the ampoule 1. As shown in FIG. 4, the ampoule 1 is made of a quartz material, and is further loaded into a ceramic cartridge 2 which is made of ceramics.
カートリツジ2及びアンプル1は電気炉3上に取り付
け、加熱により一旦全試料を溶融状態とする。その後ア
ンプル1を徐々に定速で右へ移動させる。右側には冷却
器4があるのでアンプル1右端から試料は凝固し始め
る。この状況を第6図に示す。この操作はμG下で行う
ので溶けた試料はアンプル1とほぼ同心の位置にあり、
体積収縮のため径dmはdiよりも小となつている。これが
凝固して右側の7のようになると再び体積増加して径ds
となり、ほぼ初期の径diと同程度となつて、アンプル1
内壁にほぼ密着する。The cartridge 2 and the ampoule 1 are mounted on the electric furnace 3, and all the samples are once brought into a molten state by heating. After that, the ampoule 1 is gradually moved to the right at a constant speed. Since there is the cooler 4 on the right side, the sample starts to solidify from the right end of the ampoule 1. This situation is shown in FIG. Since this operation is performed under μG, the melted sample is almost concentric with ampoule 1,
The diameter dm is smaller than di due to volume contraction. When this solidifies and becomes like 7 on the right side, the volume increases again and the diameter ds
And the diameter is almost the same as the initial diameter di, and ampoule 1
It almost adheres to the inner wall.
第6図に示すように溶融試料6は自由液面をもつた液
柱であり、かつ左側で加熱、右側で冷却されるため左右
の温度差がつく。このため左右の表面張力にも差がで
き、液が表面で左から右、内部で右から左に流れるよう
ないわゆる表面張力対流を生じる。As shown in FIG. 6, the molten sample 6 is a liquid column having a free liquid surface, and is heated on the left side and cooled on the right side, so that there is a temperature difference between the left and the right. For this reason, there is a difference in the surface tension on the left and right, and so-called surface tension convection occurs in which the liquid flows from the left to the right on the surface and from the right to the left inside.
なお、μG下製造とは、宇宙空間での製造、あるいは
航空機、ロケツト等による無重力飛行時の製造を指す。Manufacturing under μG means manufacturing in outer space, or manufacturing in weightless flight by an aircraft, a rocket or the like.
従来のμG下での結晶成長法では、前述した表面張力
対流のため、凝固界面で結晶構造が乱れ欠陥の多い結晶
となつて、品質の高いものが得られないという問題があ
つた。In the conventional crystal growth method under μG, due to the above-mentioned surface tension convection, there is a problem that the crystal structure is disturbed at the solidification interface, resulting in many defects and high quality cannot be obtained.
本発明は上記技術水準に鑑み、μG下における表面張
力対流を防止または殆んど防止して品質の高い結晶を得
ることのできる結晶成長法を提供しようとするものであ
る。In view of the above-mentioned state of the art, the present invention aims to provide a crystal growth method capable of preventing or almost preventing surface tension convection under μG to obtain a high quality crystal.
本発明は、 (1) 円管状のアンプル内に固形の初期試料を充填
し、これを加熱して一旦溶融させた後、冷却により再凝
固して所要の材料結晶を得る操作を微小重力下において
行う方法において、該初期試料の外周にリング状のスペ
ーサを複数かつ間欠的に設けることを特徴とする結晶成
長法及び (2) 円管状のアンプル内に固形の初期試料を充填
し、これを加熱して一旦溶融させた後、冷却により再凝
固して所要の材料結晶を得る操作を微小重力下で行う方
法において、該初期試料とアンプルの間に操作温度では
非溶融性の微小粒子材を充填することを特徴とする結晶
成長法 である。The present invention is as follows: (1) A solid initial sample is filled in a circular tube-shaped ampoule, heated and once melted, and then re-solidified by cooling to obtain a desired material crystal under microgravity. In the method to be carried out, a crystal growth method characterized in that a plurality of ring-shaped spacers are intermittently provided on the outer circumference of the initial sample, and (2) a solid initial sample is filled in a circular tube-shaped ampoule and heated. Then, after melting once, re-solidify by cooling to obtain the required material crystals in a method under microgravity, in which a microparticle material that is not melted at the operating temperature is filled between the initial sample and the ampoule. The crystal growth method is characterized by
第1の発明においては、試料融解液の自由表面がスペ
ーサにより分断されることにより、個々の自由表面が小
さくなつて、各自由表面における両端温度差が小さくな
り、表面張力対流が減少し、このため対流の影響が少な
い状態で凝固が進むので品質のよい結晶が得られる。In the first invention, the free surface of the sample melt is divided by the spacers, so that the individual free surfaces become smaller, the temperature difference between both ends on each free surface becomes smaller, and the surface tension convection decreases. Therefore, solidification proceeds in a state where the influence of convection is small, and high quality crystals can be obtained.
第2の発明においては、試料溶融時に自由表面上に微
少粒子群が付着するため、表面張力対流が生じにくくな
り、対流のないまたは少ない状態のまゝで凝固が進むの
で品質のよい結晶が得られる。In the second aspect of the present invention, since a group of fine particles adheres to the free surface when the sample is melted, surface tension convection is less likely to occur, and solidification proceeds without or with little convection, resulting in a good quality crystal To be
〔実施例1〕 第1の発明の実施態様の一つを第1図によつて説明す
る。第1図中、第4図と同一部位には同一符号を付して
ある。第1図(a)は初期試料の状態を示す。[Embodiment 1] One embodiment of the first invention will be described with reference to FIG. In FIG. 1, the same parts as those in FIG. 4 are designated by the same reference numerals. FIG. 1 (a) shows the state of the initial sample.
スペーサ8は石英あるいはグラフアイト等の非溶融材
を小型の2分割リング状に成形し、これを初期試料5の
表面の円周上に間欠的に設けた溝の中に埋め込み、スペ
ーサ8外径と初期試料5外径とが殆んど等しくなるよう
に調整する。このように調整された初期試料5をアンプ
ル1に装填された状態が第1図(a)に示されている。The spacer 8 is formed by molding a non-melting material such as quartz or graphite into a small two-divided ring shape, and embedding this in a groove provided intermittently on the circumference of the surface of the initial sample 5 to form an outer diameter of the spacer 8. And the outer diameter of the initial sample 5 are adjusted to be almost equal. The state in which the initial sample 5 thus adjusted is loaded in the ampoule 1 is shown in FIG.
第1図(b)は結晶製造中の状態を示す。アンプル1
全体が加熱され、初期試料5は溶融試料6となつている
が、冷却端(右側)では一部凝固試料7が形成されつつ
ある。このとき、溶融による体積減少により初期試料5
は円柱状の液柱となり微小重力であるため全体がアンプ
ル1内面と遊離して自由表面を形成する。しかし、これ
は第1図(b)に示すようにリングがあるため、S1,S2,
・・・のように分割された自由表面となる。自由表面S1
を例にとると、自由表面S1はスペーサ8−1とスペーサ
8−2との間のみで連続した液面となる。スペーサ8−
1における液の温度とスペーサ8−2の温度との差は比
較的(第6図の場合にくらべ)小さいのでこれに基いて
発生する表面張力対流も僅小であり、第1図(b)に矢
印で流線を示したように表面近傍での小規模な対流にと
どまり、凝固界面にまで影響を及ぼすようなことにはな
り得ない。このため凝固して得られた結晶は良品質のも
のとなる。FIG. 1 (b) shows a state during crystal production. Ampoule 1
The entire sample is heated, and the initial sample 5 becomes a molten sample 6, but a partially solidified sample 7 is being formed at the cooling end (right side). At this time, the initial sample 5
Becomes a columnar liquid column, and because of microgravity, the whole is separated from the inner surface of the ampoule 1 to form a free surface. However, since this has a ring as shown in FIG. 1 (b), S 1 , S 2 ,
It becomes a free surface divided like. Free surface S 1
For example, the free surface S 1 is a continuous liquid surface only between the spacers 8-1 and 8-2. Spacer 8-
Since the difference between the temperature of the liquid in 1 and the temperature of the spacer 8-2 is relatively small (compared to the case of FIG. 6), the surface tension convection generated based on this is also small, and FIG. 1 (b) As shown by the streamline in the arrow, the convection remains small in the vicinity of the surface and cannot affect the solidification interface. Therefore, the crystals obtained by solidification are of good quality.
次に、第1の発明の実施態様の別の例を第2図によつ
て説明する。第2図は結晶製造中の状態を示す。第2図
においても、第4図と同一部位には同一符号を付してあ
る。Next, another example of the embodiment of the first invention will be described with reference to FIG. FIG. 2 shows the state during crystal production. Also in FIG. 2, the same parts as those in FIG. 4 are designated by the same reference numerals.
リング状のスペーサ8は円筒状の初期試料5の外周に
複数個装着される。初期試料5溶融時には液はスペーサ
8内側とは密着したまま、スペーサ間の当初から空間で
あつた部分で更に空間が増すことになつて、S1,S2・・
・のような自由表面を形成する。これにより前例と同じ
作用が得られる。A plurality of ring-shaped spacers 8 are mounted on the outer circumference of the cylindrical initial sample 5. While at the time of initial sample 5 molten liquid had close contact with the spacer 8 inside, initially such that increasing further space Atsuta part space from the connexion between the spacer, S 1, S 2 · ·
Form a free surface like. As a result, the same effect as the previous example can be obtained.
更に別の態様として、第2図のスペーサの代りに図示
しないが、初期試料の外周に、多数の垂直方向の貫通孔
を有する円筒状体を被覆させても、上述したスペーサと
同様の効果を奏し得る。As yet another aspect, although not shown in place of the spacer in FIG. 2, even if the outer periphery of the initial sample is coated with a cylindrical body having a large number of through holes in the vertical direction, the same effect as that of the spacer described above is obtained. Can play.
〔実施例2〕 第2の発明の実施態様を第3図によつて説明する。第
3図は結晶製造中の状態を示す。第3図中、第4図と同
一部位には同一符号を付してある。[Embodiment 2] An embodiment of the second invention will be described with reference to FIG. FIG. 3 shows a state during crystal production. In FIG. 3, those parts which are the same as those corresponding parts in FIG. 4 are designated by the same reference numerals.
微粒子充填材9はAl2O3あるいはY2O3などのセラミツ
クス材で、このNi合金製造操作温度では溶融しない材料
からなるものである。微粒子の径は約0.2〜100μm程度
の範囲のものであり、これらを適当な充填率で初期試料
5の周囲に充填する。溶融試料6の処では試料6とアン
プル1の間隙が拡がるが、微粒子充填材9は液面上に付
着するため、液と固形粒子表面との間に界面張力が存在
することになり、したがつて表面張力は消滅することに
なる。固液間の界面張力は温度差によつて殆んど変らな
いため、溶融試料6左右で差がなく従つて液の移動は生
じ得ない。The fine particle filler 9 is a ceramic material such as Al 2 O 3 or Y 2 O 3 , and is made of a material that does not melt at the operating temperature of this Ni alloy production. The diameter of the fine particles is in the range of about 0.2 to 100 μm, and these are filled around the initial sample 5 at an appropriate filling rate. Although the gap between the sample 6 and the ampoule 1 widens in the molten sample 6, the fine particle filler 9 adheres to the liquid surface, so that there is an interfacial tension between the liquid and the solid particle surface. Then the surface tension will disappear. Since the interfacial tension between the solid and the liquid hardly changes due to the temperature difference, there is no difference between the left and right of the molten sample 6, and accordingly the liquid cannot move.
以上はNi合金を高温材として製造する場合を一例とし
て述べたが、この他にエネルギ変換材として用いる半導
体、あるいは電子材料、超電導材料など製造にも適用可
能であり、また、以上はブリツジマン法について述べた
が、この他に帯域溶融法についても同様に適用可能であ
る。The above describes the case where the Ni alloy is manufactured as a high-temperature material as an example, but in addition to this, it is also applicable to the manufacturing of semiconductors used as energy conversion materials, or electronic materials, superconducting materials, etc. Although described, the zone melting method can be similarly applied in addition to this.
本発明により表面張力対流が減少または全く回避でき
るため、高品質の結晶が得られる。The present invention reduces or eliminates surface tension convection, resulting in high quality crystals.
第1図,第2図は本発明の一実施例の説明図、第3図は
本発明の他の実施例の説明図、第4図〜第6図は従来法
の説明図である。1 and 2 are explanatory views of one embodiment of the present invention, FIG. 3 is an explanatory view of another embodiment of the present invention, and FIGS. 4 to 6 are explanatory views of a conventional method.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 植屋 勝己 兵庫県神戸市兵庫区和田宮通7丁目1番14 号 西菱エンジニアリング株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsumi Ueya 7-14 Wadamiyadori, Hyogo-ku, Kobe, Hyogo Prefecture Nishiryo Engineering Co., Ltd.
Claims (2)
填し、これを加熱して一旦溶融させた後、冷却により再
凝固して所要の材料結晶を得る操作を微小重力下におい
て行う方法において、該初期試料の外周にリング状のス
ペーサを複数かつ間欠的に設けることを特徴とする結晶
成長法。1. A method in which a solid initial sample is filled in a circular tube-shaped ampoule, which is heated and once melted, and then resolidified by cooling to obtain a desired material crystal under microgravity. 2. A crystal growth method, wherein a plurality of ring-shaped spacers are intermittently provided on the outer periphery of the initial sample.
填し、これを加熱して一旦溶融させた後、冷却により再
凝固して所要の材料結晶を得る操作を微小重力下で行う
方法において、該初期試料とアンプルの間に操作温度で
は非溶融性の微小粒子材を充填することを特徴とする結
晶成長法。2. A method in which a solid initial sample is filled in a circular tube-shaped ampoule, which is heated and once melted, and then re-solidified by cooling to obtain a desired material crystal under microgravity. 2. A crystal growth method characterized in that a fine particle material which is infusible at an operating temperature is filled between the initial sample and the ampoule.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14999088A JPH0822794B2 (en) | 1988-06-20 | 1988-06-20 | Crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14999088A JPH0822794B2 (en) | 1988-06-20 | 1988-06-20 | Crystal growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH026380A JPH026380A (en) | 1990-01-10 |
| JPH0822794B2 true JPH0822794B2 (en) | 1996-03-06 |
Family
ID=15487056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14999088A Expired - Lifetime JPH0822794B2 (en) | 1988-06-20 | 1988-06-20 | Crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0822794B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01300043A (en) * | 1988-05-24 | 1989-12-04 | Japan Metal Gasket Co Ltd | Metal gasket |
| JPH0718112Y2 (en) * | 1989-02-28 | 1995-04-26 | オプトニクス株式会社 | Push-button switch device for vending machines |
-
1988
- 1988-06-20 JP JP14999088A patent/JPH0822794B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH026380A (en) | 1990-01-10 |
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