JPH0823508B2 - Thermopile - Google Patents
ThermopileInfo
- Publication number
- JPH0823508B2 JPH0823508B2 JP63010756A JP1075688A JPH0823508B2 JP H0823508 B2 JPH0823508 B2 JP H0823508B2 JP 63010756 A JP63010756 A JP 63010756A JP 1075688 A JP1075688 A JP 1075688A JP H0823508 B2 JPH0823508 B2 JP H0823508B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film pattern
- thermopile
- intermediate metal
- thermocouple
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Radiation Pyrometers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、赤外線検出機能を有し、赤外線パワーメー
タや放射温度計等に使用されるサーモパイルに関する。Description: TECHNICAL FIELD The present invention relates to a thermopile having an infrared detection function and used for an infrared power meter, a radiation thermometer, and the like.
第３図及び第４図に従来のサーモパイルの構造を示
す。第４図は主表面として（100）面のシリコン片を用
いて形成した素子を第３図のIV−IV線に沿って切断した
断面を示す図である。3 and 4 show the structure of a conventional thermopile. FIG. 4 is a view showing a cross section of an element formed by using a (100) plane silicon piece as a main surface, taken along line IV-IV in FIG.
このサーモパイルはシリコン単結晶片の上面に第１熱
電対材料薄膜パターン２と第２熱電対材料薄膜パターン
３とを交互に放射状に配置し、その外側同士及び内側同
士を各々中間金属薄膜パターン４、５で相互に接続し
て、それら第１熱電対材料薄膜パターン２と第２熱電対
材料薄膜パターン３を直列接続すると共に、内側の中間
金属薄膜パターン５を含むように赤外線吸収用の黒体薄
膜パターン６（熱吸収体部）を配置して、その黒体薄膜
パターン６の部分を温接点Ｂ、外側の中間金属薄膜パタ
ーン４を冷接点Ａとして、その温度差より第１熱電対材
料薄膜パターン２及び第２熱電対材料薄膜パターン３の
各々に生じる起電力の直列合計値を、端子７、８から得
るようにしたものである。In this thermopile, first thermocouple material thin film patterns 2 and second thermocouple material thin film patterns 3 are alternately and radially arranged on the upper surface of a silicon single crystal piece, and the outer side and the inner side thereof are respectively formed of an intermediate metal thin film pattern 4, 5, the first thermocouple material thin film pattern 2 and the second thermocouple material thin film pattern 3 are connected in series, and a black body thin film for infrared absorption is formed so as to include the inner intermediate metal thin film pattern 5. The pattern 6 (heat absorber portion) is arranged, the black body thin film pattern 6 is the hot junction B, and the outer intermediate metal thin film pattern 4 is the cold junction A. From the temperature difference, the first thermocouple material thin film pattern is formed. The serial total value of the electromotive force generated in each of the second and second thermocouple material thin film patterns 3 is obtained from the terminals 7 and 8.
製法は、（100）面を有する厚さ200μｍのシリコンウ
エハの主表面（100）に、SiO2、Si3N4等の絶縁膜９を単
層又は多層に形成し、その上にホトリソグラフィー法、
真空蒸着法の併用（以下、リフトオフ法と記す。）によ
って、第１熱電対材料薄膜パターン２と第２熱電対材料
薄膜パターン３を形成する。The manufacturing method is as follows. The main surface (100) of a 200 μm thick silicon wafer having a (100) plane is formed with a single layer or a multi-layer of an insulating film 9 of SiO 2 , Si 3 N 4 or the like, and a photolithography method is formed thereon. ,
The first thermocouple material thin film pattern 2 and the second thermocouple material thin film pattern 3 are formed by combined use of a vacuum vapor deposition method (hereinafter referred to as a lift-off method).
次に、再度リフトオフ法により中間金属薄膜パターン
４、５を形成する。ここで、外側の中間金属薄膜パター
ン４の部分が冷接点４、内側の中間金属薄膜パターン５
の部分が温接点Ｂとなる。Next, the intermediate metal thin film patterns 4 and 5 are formed again by the lift-off method. Here, the outer intermediate metal thin film pattern 4 is the cold junction 4, and the inner intermediate metal thin film pattern 5 is
Is the hot junction B.
次に、スパッタリング法によりSiO2の絶縁膜10を形成
し、その上面にリフトオフ法によって金黒等の黒体を薄
膜パターン６を形成し、更にその上面に表面保護のため
にスパッタリング法によりSiO2の絶縁膜11を形成する。Then, by a sputtering method to form an insulating film 10 of SiO 2, the black body gold black such as to form a thin film pattern 6 by a lift-off method on the upper surface thereof, SiO 2 by a further sputtering for surface protection on the upper surface The insulating film 11 is formed.
更に、シリコンウエハの裏面側から、周知のホトエッ
チングによりパターンの中心部に、そのシリコンウエハ
を絶縁膜９まで達するよう貫通する穴12を形成し、その
後にダイシングにより複数のシリコン片１（チップ）に
分離する。Further, a hole 12 penetrating the silicon wafer so as to reach the insulating film 9 is formed at the center of the pattern from the back surface side of the silicon wafer by known photo-etching, and then a plurality of silicon pieces 1 (chips) are diced. To separate.
動作は、シリコン片１の主表面の上方より入射した赤
外線をシリコン片１の中央部に位置する黒体薄膜パター
ン６が吸収して熱に変換することにより、中央部分の温
度が上昇し、温接点Ｂの温度を僅かに上昇させ、熱電導
の高いシリコン単結晶上に形成されている冷接点Ａとの
間に温度差を生じさせる。この結果、各熱電対に起電力
が生じ、これらの熱電対の各起電力が直列接続されて、
入射する赤外線のパワーに応じた電圧が、端子７、８か
ら得られる。In operation, infrared rays incident from above the main surface of the silicon piece 1 are absorbed by the black body thin film pattern 6 located in the central portion of the silicon piece 1 and converted into heat, whereby the temperature of the central portion rises and the temperature rises. The temperature of the contact B is slightly raised to cause a temperature difference between the contact B and the cold contact A formed on the silicon single crystal having high thermal conductivity. As a result, electromotive force is generated in each thermocouple, each electromotive force of these thermocouples are connected in series,
A voltage corresponding to the power of the incident infrared ray is obtained from the terminals 7 and 8.
ところが、この従来のサーモパイルは、黒体薄膜パタ
ーン６が導電性をもつ関係から、絶縁膜10によりその黒
体薄膜パターン６と中間金属薄膜パターン５を相互に電
気的に分離する必要があるために、黒体薄膜パターン６
が受けた熱が、その絶縁膜10を通って温接点Ｂに伝わる
ようになる。しかし、この絶縁膜10は熱伝導性が悪いの
で、黒体薄膜パターン６の受けた熱の伝達効率が悪く、
サーモパイル起電力が損なわれ、発電効率が悪かった。However, in this conventional thermopile, since the black body thin film pattern 6 has conductivity, it is necessary to electrically separate the black body thin film pattern 6 and the intermediate metal thin film pattern 5 from each other by the insulating film 10. , Blackbody thin film pattern 6
The heat received by is transmitted to the hot junction B through the insulating film 10. However, since the insulating film 10 has poor thermal conductivity, the efficiency of transferring heat received by the black body thin film pattern 6 is poor,
The thermopile electromotive force was damaged and power generation efficiency was poor.
本発明の目的は、黒体等の熱吸収体部で受けた熱を効
率よく熱電対に伝達できるようにして、発電効率を向上
させることである。An object of the present invention is to improve the power generation efficiency by efficiently transmitting the heat received by the heat absorber portion such as the black body to the thermocouple.
このために本発明は、中央部の熱吸収体部に温接点と
なる端部が位置するように複数の熱電対材料を放射状に
配置し、該熱電対材料の温接点となる端部同士及び冷接
点となる端部同士を各々中間金属により２個毎接続する
ことにより上記複数の熱電対材料を直列接続し、起電力
の直列出力を得るようにしたサーモパイルにおいて、上
記熱吸収体部を、上記温接点となる端部同士を接続する
中間金属毎に相互に分離して設けるとともに該中間金属
と接触させて構成した。For this reason, the present invention radially arranges a plurality of thermocouple materials so that the end that becomes the hot junction is located in the central heat absorber, and the end portions that become the hot junction of the thermocouple material and In the thermopile in which the plurality of thermocouple materials are connected in series by connecting two ends each of which is a cold junction with an intermediate metal, and the series output of electromotive force is obtained, Each of the intermediate metals connecting the end portions to be the hot junctions is provided separately from each other and is in contact with the intermediate metal.
以下、本発明の実施例について説明する。第１図及び
第２図はその一実施例のサーモパイルを示す図である。Examples of the present invention will be described below. 1 and 2 are views showing a thermopile of the embodiment.
本実施例では、第１熱電対材料薄膜パターン２及び第
２熱電対材料薄膜パターン３の内側、つまり温接点Ｂ部
分を接続するための中間金属薄膜パターン21を円板状に
形成し、その上に黒体薄膜パタンー22を同形状に直接重
ね合わせて形成し、この後に両パタンー21、22を隣接す
る２個の熱電対毎に電気的に分離して、それら両パター
ン21、22を面積の大きな扇形状に形成したものである。In this embodiment, an intermediate metal thin film pattern 21 for connecting the first thermocouple material thin film pattern 2 and the second thermocouple material thin film pattern 3, that is, the hot junction B portion is formed in a disc shape, and is formed thereon. The black body thin film pattern 22 is formed by directly superimposing it on the same shape, and then both patterns 21 and 22 are electrically separated for every two adjacent thermocouples, and both patterns 21 and 22 are divided into areas. It is formed in a large fan shape.
これらにより、黒体薄膜パターン22で吸収した熱は、
絶縁膜を介さずに直接熱抵抗の低い中間金属薄膜パター
ン21に伝達され、この中間金属薄膜パターン21が熱を温
接点Ｂに運び、その温接点Ｂの温度を上昇させ、ひいて
はサーモパイルの起電力を上昇させる。Due to these, the heat absorbed by the black body thin film pattern 22 is
It is directly transferred to the intermediate metal thin film pattern 21 having a low thermal resistance without passing through the insulating film, and the intermediate metal thin film pattern 21 transfers heat to the hot junction B, raises the temperature of the hot junction B, and eventually the electromotive force of the thermopile. Raise.
また、製造の上でも、中間金属薄膜パターン21と黒体
薄膜パターン22の形成は、ホトリソグラフィで行うこと
ができ、絶縁膜形成の１工程が削減できることとあいま
って、サーモパイルの低価格化にも資することができ
る。Also, in terms of manufacturing, the formation of the intermediate metal thin film pattern 21 and the black body thin film pattern 22 can be performed by photolithography, and one step of forming the insulating film can be reduced, which also contributes to the cost reduction of the thermopile. Can contribute.
以上のように本発明によれば、熱／電気変換効率を高
めることができ、また製造コストも低下するという利点
がある。As described above, according to the present invention, there is an advantage that the heat / electric conversion efficiency can be increased and the manufacturing cost can be reduced.
第１図は本発明の一実施例のサーモパイルの平面図、第
２図は第１図のII−II線に沿った断面図、第３図は従来
のサーモパイルの平面図、第４図は第３図のIV−IV線に
沿った断面図である。 １……シリコン片、２……第２熱電対材料薄膜パター
ン、３……第２熱電対材料薄膜パターン、４、５……中
間金属薄膜パターン、６……黒体薄膜パターン、７、８
……端子、９〜11……絶縁膜、12……穴、21……内側の
中間金属、22……黒体薄膜パターン。1 is a plan view of a thermopile of an embodiment of the present invention, FIG. 2 is a sectional view taken along line II-II of FIG. 1, FIG. 3 is a plan view of a conventional thermopile, and FIG. FIG. 4 is a sectional view taken along line IV-IV in FIG. 3. 1 ... Silicon piece, 2 ... Second thermocouple material thin film pattern, 3 ... Second thermocouple material thin film pattern, 4, 5 ... Intermediate metal thin film pattern, 6 ... Black body thin film pattern, 7, 8
...... Terminal, 9-11 ... Insulating film, 12 ... Hole, 21 ... Inner intermediate metal, 22 ... Black body thin film pattern.
Claims (2)
位置するように複数の熱電対材料を放射状に配置し、該
熱電対材料の温接点となる端部同士及び冷接点となる端
部同士を各々中間金属により２個毎接続することにより
上記複数の熱電対材料を直列接続し、起電力の直列出力
を得るようにしたサーモパイルにおいて、 上記熱吸収体部を、上記温接点となる端部同士を接続す
る中間金属毎に相互に分離して設けるとともに該中間金
属と接触させたことを特徴とするサーモパイル。1. A plurality of thermocouple materials are radially arranged so that an end portion which becomes a hot junction is located in a heat absorber portion in a central portion, and end portions which become hot junctions of the thermocouple material and cold junctions. In the thermopile in which the plurality of thermocouple materials are connected in series by connecting two ends each of which becomes an intermediate metal, a series output of electromotive force is obtained, A thermopile, characterized in that it is provided separately for each intermediate metal that connects the ends that become contact points and is brought into contact with the intermediate metal.
を特徴とする特許請求の範囲第１項記載のサーモパイ
ル。2. The thermopile according to claim 1, wherein each of the heat absorber parts has a fan shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63010756A JPH0823508B2 (en) | 1988-01-22 | 1988-01-22 | Thermopile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63010756A JPH0823508B2 (en) | 1988-01-22 | 1988-01-22 | Thermopile |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01187420A JPH01187420A (en) | 1989-07-26 |
| JPH0823508B2 true JPH0823508B2 (en) | 1996-03-06 |
Family
ID=11759167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63010756A Expired - Lifetime JPH0823508B2 (en) | 1988-01-22 | 1988-01-22 | Thermopile |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0823508B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100359836B1 (en) * | 2000-02-21 | 2002-11-07 | 엘지전자 주식회사 | thermopile sensor |
| JP4633296B2 (en) * | 2001-05-18 | 2011-02-16 | 株式会社堀場製作所 | Thermopile sensor |
-
1988
- 1988-01-22 JP JP63010756A patent/JPH0823508B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01187420A (en) | 1989-07-26 |
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