JPH0825337B2 - Optical information recording / reproducing / erasing member and optical disc - Google Patents
Optical information recording / reproducing / erasing member and optical discInfo
- Publication number
- JPH0825337B2 JPH0825337B2 JP63106401A JP10640188A JPH0825337B2 JP H0825337 B2 JPH0825337 B2 JP H0825337B2 JP 63106401 A JP63106401 A JP 63106401A JP 10640188 A JP10640188 A JP 10640188A JP H0825337 B2 JPH0825337 B2 JP H0825337B2
- Authority
- JP
- Japan
- Prior art keywords
- recording
- reproducing
- thin film
- erasing
- information recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims description 12
- 239000010409 thin film Substances 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910005900 GeTe Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 238000010791 quenching Methods 0.000 claims description 2
- 230000000171 quenching effect Effects 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 description 9
- 230000008025 crystallization Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000005280 amorphization Methods 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910017000 As2Se3 Inorganic materials 0.000 description 1
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052958 orpiment Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はレーザービーム等により、情報を高密度、大
容量で記録再生、及び消去できる光学情報記録再生消去
部材と光ディスクに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical information recording / reproducing / erasing member and an optical disk capable of recording / reproducing and erasing information with high density and large capacity by using a laser beam or the like.
従来の技術 光ディスクメモリに関しては、TeとTeO2を主成分とす
るTeOx（０＜ｘ＜2.0）薄膜を用いた追記型のディスク
がある。さらに、レーザ光により薄膜を加熱し、溶融
し、急冷することにより、非晶質化し情報を記録しまし
たこれを加熱し、徐冷することにより結晶化し、消去す
ることができる材料としては、S.R.Ovshinsky（エス・
アール・オブシンスキー）氏等のカルコゲン材料Ge15Te
81Sb2S2等が知られている。また、As2S3やAs2Se3あるい
はSb2Se3等カルコゲン元素と周期律表第VI族あるいはGe
等の第IV族元素等の組み合せからなる薄膜等が広く知ら
れている。これらの薄膜にレーザ光で情報を記録し、そ
の情報を消去する方法としてはあらかじめ薄膜を結晶化
させておき、これにφ１μｍに絞ったレーザ光を情報
に対応させて強度変調を施し、例えば、円盤状の記録デ
ィス７を回転せしめて照射し、このレーザ光照射部位
は、薄膜の融点以上に昇温し、かつ急冷し、非晶質化し
たマークとして情報の記録がおこなえる。この情報を消
去するに際してはディスクの回転トラック方向に長いス
ポット光を照射することにより、薄膜を加熱昇温させ、
長いスポット光による徐冷効果によって再び結晶化させ
る方法がしられている。2. Description of the Related Art As an optical disk memory, there is a write-once disk using a TeOx (0 <x <2.0) thin film mainly composed of Te and TeO2. Furthermore, by heating the thin film with laser light, melting it, and rapidly cooling it, it became amorphous and recorded information.As a material that can be crystallized by heating and slowly cooling it, SROvshinsky (S
Earl of Shinsky) etc. chalcogen material Ge15Te
81Sb2S2 and the like are known. Also, chalcogen elements such as As2S3, As2Se3, or Sb2Se3 and Group VI or Ge of the periodic table.
Thin films and the like made of a combination of group IV elements and the like are widely known. As a method of recording information on these thin films with laser light and erasing the information, the thin films are crystallized in advance, and the laser light focused on φ1 μm is intensity-modulated corresponding to the information. The disk-shaped recording disk 7 is rotated for irradiation, and the laser light irradiation site is heated to a temperature equal to or higher than the melting point of the thin film and rapidly cooled, so that information can be recorded as an amorphized mark. When erasing this information, by irradiating a long spot light in the direction of the rotating track of the disk, the thin film is heated and heated,
There is a method of re-crystallizing by a slow cooling effect by a long spot light.
発明が解決しようとする課題 薄膜を加熱昇温し、溶融急冷非晶質化および加熱昇温
結晶化の手段を用いる情報記録および消去可能な記録媒
体における第１の課題は結晶化に際し、長いスポット光
による徐冷を必要とすることである。第２の課題は加熱
サイクルに対応して信号品質が変動することである。こ
の変動要因としては、記録スポット光および消去スポッ
ト光による400℃以上の急速な加熱、冷却の多数回のく
りかえし刺激による基板材質の熱的，機械的な損傷があ
る。さらに、記録薄膜の熱的，機械的な損傷がある。記
録薄膜については、その構成組成によっては、膜中の組
成、成分の場所的な変化いわゆる偏析が発生する場合も
ある。Problem to be Solved by the Invention A first problem in an information recording and erasable recording medium which uses a means of heating and heating a thin film, melting and quenching amorphousization and heating and temperature rising crystallization is a long spot during crystallization. It requires slow cooling by light. The second problem is that the signal quality varies depending on the heating cycle. The cause of this fluctuation is thermal and mechanical damage to the substrate material due to repeated stimuli of rapid heating and cooling of 400 ° C. or more by recording spot light and erasing spot light. In addition, there is thermal and mechanical damage to the recording thin film. With respect to the recording thin film, depending on the composition of the recording thin film, there may be a case where a so-called segregation occurs due to a spatial change of the composition and components in the film.
基板あるいは記録膜が以上のような変化を生じた場
合、記録再生、消去のサイクルにおいて、ノイズの増大
を生じ、サイクル特性の劣化が発生するという課題があ
った。When the substrate or the recording film changes as described above, there is a problem that noise is increased in the cycle of recording / reproducing and erasing, and the cycle characteristics are deteriorated.
本発明の目的は第１に短い、サークルスポットで結晶
化をおこなえる部材を提供することである。第２の目的
はサイクル特性の安定な部材を提供することである。An object of the present invention is, firstly, to provide a short member which can be crystallized in a circle spot. The second purpose is to provide a member having stable cycle characteristics.
課題を解決するための手段 本発明は、レーザ光等の照射により熱的に薄膜の状態
を変化させて情報を記録および消去する部材において、
薄膜材料として、GeTeと、Sbの混合体とし、SbとGeTeの
モル比をＸとして、Ｘ＝Sb/GeTeを0.1＜Ｘ＜0.5に選
び、これを基板に形成してなることを特徴とする光学情
報記録再生消去部材と光ディスクを提供するものであ
る。Means for Solving the Problems The present invention is a member for recording and erasing information by thermally changing the state of a thin film by irradiation with laser light or the like,
The thin film material is a mixture of GeTe and Sb, the molar ratio of Sb and GeTe is X, and X = Sb / GeTe is selected to be 0.1 <X <0.5, which is formed on the substrate. An optical information recording / reproducing / erasing member and an optical disc are provided.
作用 GeTe合金は融点が、Tm＝725℃と高く、薄膜化するこ
とにより、非晶質膜が得られ、この膜にレーザ光を照射
し、昇温溶融急冷あるいは、昇温徐冷することにより非
晶質化，結晶化の記録消去作用を有する。Action GeTe alloy has a high melting point of Tm = 725 ° C, and by making it thin, an amorphous film is obtained. By irradiating this film with laser light and rapidly heating and melting it, or by gradually heating and cooling it. It has a recording / erasing function for amorphization and crystallization.
この組成体は結晶化速度が速く、短いレーザスポット
やサークルスポットで結晶化する性質を有する。しかし
ながら、逆に結晶化速度が速いために非晶質化マーク形
成に、冷却速度の制限をうける。そこで、融点の低い、
Tm＝630℃のSbを混合することにより、結晶化速度を制
御する。Sbの混合量を多くするにしたがって結晶化速度
が低下し、逆に非晶質化マーク形成が容易になる。この
Sbは結晶化、非晶質化の過程において、GeTeの結晶化粒
径の成長に対する阻止効果を有し、記録、消去のサイク
ルにおいて結晶化粒径による感度変化を押さえサイクル
特性の向上をもたらす。This composition has a high crystallization rate and has the property of being crystallized by a short laser spot or circle spot. However, on the contrary, since the crystallization rate is high, the cooling rate is limited in forming the amorphized marks. Therefore, the melting point is low,
The crystallization rate is controlled by mixing Sb with Tm = 630 ° C. As the amount of Sb mixed increases, the crystallization rate decreases, and conversely, the amorphous mark formation becomes easier. this
Sb has an effect of inhibiting the growth of the crystallized grain size of GeTe in the process of crystallization and amorphization, and suppresses the sensitivity change due to the crystallized grain size in the recording and erasing cycles, and improves the cycle characteristics.
実施例 記録層である薄膜を形成する基板としては、あらかじ
め、レーザ光案内用の溝あるいは、ピット列を形成した
ポリカーボネイト等の樹脂基板あるいは、ガラス板を用
いる。この表面にあらかじめ耐熱性のすぐれたZnSある
いはSiO2等の第１の無機誘電体層を形成しておく。この
誘電体層としてはSiO2を15モル％以上含ませたZnS誘電
体層が好ましい。Example As a substrate on which a thin film which is a recording layer is formed, a resin substrate such as a polycarbonate in which a groove for laser light guide or a pit row is formed in advance, or a glass plate is used. A first inorganic dielectric layer such as ZnS or SiO2 having excellent heat resistance is previously formed on this surface. As this dielectric layer, a ZnS dielectric layer containing 15 mol% or more of SiO2 is preferable.
この上に、GeTe合金およびSbからなる混合薄膜を形成
する。さらにこの記録薄膜層の上に第２の無機誘電体層
を設けることにより耐熱性の向上をはかることができ
る。薄膜形成の方法としては、真空蒸着あるいは、スパ
ッタ法が使用できる。第２の無機誘電体層の上に反射層
を設けることにより、感度の向上をはかることもでき
る。この薄膜の膜厚として80nmを選ぶ。さらに保護板と
してポリカーボネイト板を接着剤で密着する。On top of this, a mixed thin film of GeTe alloy and Sb is formed. Further, heat resistance can be improved by providing a second inorganic dielectric layer on the recording thin film layer. As a method for forming a thin film, vacuum deposition or sputtering can be used. Providing a reflective layer on the second inorganic dielectric layer can improve the sensitivity. Choose 80 nm as the thickness of this thin film. Further, as a protective plate, a polycarbonate plate is adhered with an adhesive.
φ130mmのディスクとして、1800rpm回転でf1＝3.43M
Hzの信号と、f2＝1.0M Hzの信号のオーバーライト特性
を測定する。オーバーライト方式は、１ケのサークルス
ポットφ１μｍのレーザ光により、高いパワーレベル
16mW,低いパワーレベル8mWのパワーレベル間の変調で、
高いパワーレベルで非晶質化マークを形成し、低いパワ
ーレベルで非晶質化マークを結晶化して消去する同時消
録の方法である。As a φ130mm disc, f1 = 3.43M at 1800 rpm
Measure the overwrite characteristics of the Hz signal and the f2 = 1.0 MHz signal. The overwrite method uses a single circle spot φ1 μm laser beam to achieve a high power level.
16mW, low power level 8mW modulation between power levels,
This is a simultaneous erasure method in which an amorphized mark is formed at a high power level and the amorphized mark is crystallized and erased at a low power level.
第１図に記録薄膜の組成と記録特性および消去特性の
関係をしめす。記録薄膜の組成はＸ＝Sb/GeTeであらわ
す。記録特性はC/Nであらわす。消去特性は消去率であ
らわす。Ｘ＝０つまり、過剰Sbがない場合は記録C/Nは
低く、これは、非晶質化マークが形成されにくいことに
対応している。Sbが少し入るだけで記録C/Nは急に増大
しＸ＝0.1以上で50dB以上になる。ただし、消去率は逆
にＸ＝０つまり、過剰Sbがない場合の方が高く、Sb量が
増加することにしたがって低下する。Ｘ＝0.5以上で20d
B以下になる。サイクル特性は、Sbが少い領域では記録
振幅の低下により限界が生ずる。Sbが多い領域ではノイ
ズレベルの増大により限界が生ずる。Ｘ＝0.2では、C/N
および消去率が高く、さらに、1E＋５サイクル以上安定
である。FIG. 1 shows the relationship between the composition of the recording thin film and the recording and erasing characteristics. The composition of the recording thin film is represented by X = Sb / GeTe. Recording characteristics are represented by C / N. The erasing property is represented by the erasing rate. X = 0, that is, the recording C / N is low when there is no excess Sb, which corresponds to the difficulty in forming amorphized marks. The recording C / N suddenly increases with only a small amount of Sb, and becomes 50 dB or more at X = 0.1 or more. However, on the contrary, the erasing rate is higher when X = 0, that is, when there is no excess Sb, and decreases as the Sb amount increases. 20d when X = 0.5 or more
B or less The cycle characteristics are limited in a region where Sb is small due to a decrease in recording amplitude. In a region with a large amount of Sb, a limit occurs due to an increase in noise level. C / N at X = 0.2
The erasing rate is high, and it is stable for 1E + 5 cycles or more.
発明の効果 レーザ光による記録再生消去をおこなう部材におい
て、GeTe合金に過剰Sbを混合した記録薄膜によりつぎの
効果を得る。EFFECTS OF THE INVENTION In a member that performs recording / reproduction / erasure by laser light, the following effects are obtained by a recording thin film in which excess Sb is mixed with GeTe alloy.
（１） 非晶質化記録および、結晶化消去が容易で１ス
ポットサークルビームオーバライトが可能。(1) Amorphous recording and crystallization erasing are easy and 1 spot circle beam overwrite is possible.
（２） 多サイクル記録および消去においてC/N,消去率
特性がすぐれる。(2) Excellent C / N and erase rate characteristics in multi-cycle recording and erasing.
図は本発明の一実施例における光学情報記録再生消去部
材の記録薄膜の組成とレーザ記録，消去特性をあらわす
グラフである。 １……記録特性C/N、２……消去特性，消去率。The figure is a graph showing the composition of the recording thin film of the optical information recording / reproducing / erasing member and the laser recording / erasing characteristics in one embodiment of the present invention. 1 …… Recording characteristic C / N, 2 …… Erase characteristic, erasure rate.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 磯村 秀己 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 内田 正美 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭61−152487（ＪＰ，Ａ) 特開 昭62−53886（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Hideki Isomura, 1006 Kadoma, Kadoma City, Osaka Prefecture, Matsushita Electric Industrial Co., Ltd. (72) Masami Uchida, 1006, Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. 56) References JP-A 61-152487 (JP, A) JP-A 62-53886 (JP, A)
Claims (3)
を吸収して昇温し、溶融し、急冷し、アモルファス化す
る性質とアモルファスの状態を昇温することにより、結
晶化する性質を有する記録薄膜として、GeTe合金とSbの
混合体とし、Sb/GeTeのモル比をＸとして、0.1＜Ｘ＜0.
5に選び基板に形成してなる光学情報記録再生消去部
材。1. A recording thin film having a property of absorbing the energy thereof by heating with a laser beam, heating, melting, quenching, and amorphizing, and a property of crystallizing by heating the amorphous state. As a mixture of GeTe alloy and Sb, and the molar ratio of Sb / GeTe is X, 0.1 <X <0.
An optical information recording / reproducing / erasing member formed on a substrate selected to 5.
その上にGeTe−Sbからなる薄膜を形成し、さらにその上
に誘電体層を形成し、さらにその誘電体層の上に反射層
を形成してなる請求項（１）記載の光学情報記録再生消
去部材。2. A dielectric layer is previously formed on a substrate,
The optical information recording / reproducing according to claim 1, wherein a thin film made of GeTe-Sb is formed thereon, a dielectric layer is further formed thereon, and a reflective layer is further formed on the dielectric layer. Erase member.
部材を用いてなる光ディスク。3. An optical disk using the optical information recording / reproducing / erasing member according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63106401A JPH0825337B2 (en) | 1988-04-28 | 1988-04-28 | Optical information recording / reproducing / erasing member and optical disc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63106401A JPH0825337B2 (en) | 1988-04-28 | 1988-04-28 | Optical information recording / reproducing / erasing member and optical disc |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01277336A JPH01277336A (en) | 1989-11-07 |
| JPH0825337B2 true JPH0825337B2 (en) | 1996-03-13 |
Family
ID=14432665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63106401A Expired - Fee Related JPH0825337B2 (en) | 1988-04-28 | 1988-04-28 | Optical information recording / reproducing / erasing member and optical disc |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0825337B2 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6166696A (en) * | 1984-09-11 | 1986-04-05 | Nippon Telegr & Teleph Corp <Ntt> | Laser recording medium |
| JP2584741B2 (en) * | 1986-03-11 | 1997-02-26 | 松下電器産業株式会社 | Rewritable optical information recording member |
| JPS62279533A (en) * | 1986-05-28 | 1987-12-04 | Toshiba Corp | Optical recording medium |
| JPH0822614B2 (en) * | 1986-08-05 | 1996-03-06 | 東レ株式会社 | Optical recording medium |
| JPS63100632A (en) * | 1986-10-16 | 1988-05-02 | Sony Corp | Optical recording medium |
| JP2538915B2 (en) * | 1987-04-20 | 1996-10-02 | 旭化成工業株式会社 | How to record and erase information |
-
1988
- 1988-04-28 JP JP63106401A patent/JPH0825337B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01277336A (en) | 1989-11-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |