JPH0828546B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0828546B2 JPH0828546B2 JP26212487A JP26212487A JPH0828546B2 JP H0828546 B2 JPH0828546 B2 JP H0828546B2 JP 26212487 A JP26212487 A JP 26212487A JP 26212487 A JP26212487 A JP 26212487A JP H0828546 B2 JPH0828546 B2 JP H0828546B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- semiconductor layer
- semiconductor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は主として光ファイバを伝送線路とする光通信
に用いられる半導体レーザ装置に関するものである。TECHNICAL FIELD The present invention relates to a semiconductor laser device mainly used for optical communication using an optical fiber as a transmission line.
従来の技術 光ファイバを伝送線路とする光通信は、その容量が大
きいだけでなく、伝送媒体が軽量、低損失で電磁妨害を
受けないなど、従来の同軸ケーブルに比べて格段に優れ
た特性を有しているため、各種情報の伝送に広く使われ
るようになってきた。また、コンピュータの分野におい
ても、信号伝送時間を短縮するために光集積回路を使用
することが試みられている。Conventional technology Optical communication using an optical fiber as a transmission line not only has a large capacity, but also has significantly superior characteristics to conventional coaxial cables, such as a lightweight transmission medium, low loss, and no electromagnetic interference. Since it has it, it has come to be widely used for transmitting various information. Also in the field of computers, attempts have been made to use optical integrated circuits in order to shorten the signal transmission time.
このような光応用技術を実現するにあたって、そのキ
ーデバイスとなるのが半導体レーザ装置であり、それに
は高速変調が低駆動電流で行なえること、および他の電
子回路要素との集積化が可能な構造であることが要求さ
れる。A semiconductor laser device is a key device for realizing such an optical application technology, and high-speed modulation can be performed with a low drive current, and integration with other electronic circuit elements is possible. It is required to be a structure.
このような観点から第４図に示す構造の半導体レーザ
装置を試作し、検討した。From such a viewpoint, a semiconductor laser device having the structure shown in FIG. 4 was prototyped and studied.
この装置においては、GaAsからなる半絶縁性の基板１
上にGaAlAsからなるｎ型クラッド層２、多重量子井戸型
の活性層３、およびGaAlAsからなるｎ型クラッド層４が
積層形成されている。ｎ型クラッド層４上には、一定の
幅の間隙をおいてｎ型のGaAs層５が形成され、さらにそ
の間隙部分内にストライプ状のｎ型GaAs層が形成されて
いる。そして、これらｎ型GaAs層５上にはCrAuからなる
電極６が、また、ストライプ状GaAs層上にはAuGeNiから
なる電極７がそれぞれ付与されている。電極６下にはｎ
型GaAs層５からｎ型クラッド層２に達するｐ型領域８
が、Znの拡散により形成されている。In this device, a semi-insulating substrate 1 made of GaAs
An n-type clad layer 2 made of GaAlAs, a multi-quantum well type active layer 3, and an n-type clad layer 4 made of GaAlAs are laminated on the upper surface. An n-type GaAs layer 5 is formed on the n-type cladding layer 4 with a gap having a constant width, and a stripe-shaped n-type GaAs layer is further formed in the gap. An electrode 6 made of CrAu is provided on the n-type GaAs layer 5, and an electrode 7 made of AuGeNi is provided on the striped GaAs layer. N under the electrode 6
P-type region 8 reaching the n-type clad layer 2 from the n-type GaAs layer 5
Are formed by diffusion of Zn.
電極６、７間に電圧を印加すると、活性層３にその両
側に位置するｐ型領域８から電流が横方向に注入され、
この活性層３でレーザ発振が起こる。When a voltage is applied between the electrodes 6 and 7, a current is laterally injected into the active layer 3 from the p-type regions 8 located on both sides thereof,
Laser oscillation occurs in this active layer 3.
このレーザ装置においては、基板１が半絶縁性である
ので、寄生容量が小さく、高速変調が可能であり、ま
た、活性層３の幅を狭くすることにより低しきい値電流
でレーザ発振をする。In this laser device, since the substrate 1 is semi-insulating, the parasitic capacitance is small, high-speed modulation is possible, and by narrowing the width of the active layer 3, laser oscillation is performed with a low threshold current. .
発明が解決しようとする問題点 ところで、上記構造の半導体レーザ装置では、レーザ
発振のしきい値電流を低くするためには、発光領域にお
ける活性層３の幅が狭ければ狭いほどよいのであるが、
それに伴って電極７の幅を狭めなければならない。も
し、電極７がｐ型領域８に接触するようなことがある
と、リーク電流が増え、低しきい値電流でのレーザ発振
が不可能となる。そのため、製造技術上の制約から、活
性層３の幅Ｗは１μｍ程度が限界となっている。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention By the way, in the semiconductor laser device having the above structure, the narrower the width of the active layer 3 in the light emitting region is, the better in order to lower the threshold current of laser oscillation. ,
Along with that, the width of the electrode 7 must be narrowed. If the electrode 7 contacts the p-type region 8 in some cases, the leak current increases and laser oscillation at a low threshold current becomes impossible. For this reason, the width W of the active layer 3 is limited to about 1 μm due to restrictions in manufacturing technology.
本発明は、幅の狭い活性層を具備し、かつ上述のよう
な電極についての制約を実質的に解消した半導体レーザ
装置を提供しようとするものである。The present invention is intended to provide a semiconductor laser device which includes an active layer having a narrow width and substantially eliminates the above-mentioned restrictions on electrodes.
問題点を解決するための手段 本発明の半導体レーザ装置は、半絶縁性基板上に、順
次積層されている、第１の半導体層、この第１の半導体
層より禁制帯幅が小さな層ならびにこの層よりもさらに
禁制帯幅が小さい層が交互に複数積層されてなる第２の
半導体層、および第３の半導体層と、第３の半導体層か
ら第１の半導体層に達する、第１の半導体層と反対の導
電型の複数の第１の領域と、第３の半導体層に、その表
面に沿って形成された、第１の半導体層と同じ導電型の
第２の領域と、第１、第２の領域上にそれぞれ形成され
ている電極とを有し、第２の領域の端縁部が第１の領域
に達しているものである。Means for Solving the Problems A semiconductor laser device according to the present invention comprises a first semiconductor layer, a layer having a forbidden band width smaller than that of the first semiconductor layer, and the first semiconductor layer, which are sequentially stacked on a semi-insulating substrate. A second semiconductor layer formed by alternately stacking a plurality of layers having a band gap smaller than that of the layers, and a third semiconductor layer, and a first semiconductor reaching the first semiconductor layer from the third semiconductor layer A plurality of first regions of a conductivity type opposite to the layer, a second region of the same conductivity type as the first semiconductor layer formed along the surface of the third semiconductor layer, And electrodes formed on the second region, respectively, and the edge portion of the second region reaches the first region.
作用 本発明の半導体レーザ装置においては、第１の半導体
層と反対の導電型の複数の第１の領域が第３の半導体層
から第１の半導体層に達しており、また第３の半導体層
には、第１の半導体層と同じ導電型の第２の領域がその
表面に沿って形成されているので、電流が発光領域の活
性層に第２の領域から直接に流入するだけでなく、第１
の半導体層からも流入し、レーザ発振をする。Action In the semiconductor laser device of the present invention, the plurality of first regions of the conductivity type opposite to the first semiconductor layer reach from the third semiconductor layer to the first semiconductor layer, and the third semiconductor layer Has a second region of the same conductivity type as that of the first semiconductor layer formed along the surface thereof, so that not only the current directly flows into the active layer of the light emitting region from the second region, First
Also flows in from the semiconductor layer and laser oscillation occurs.
実施例 以下に本発明の一実施例を図面を参照しながら説明す
る。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図は本発明の半導体レーザ装置の一実施例の断面
図であり、第４図に示した従来例と対応する部分には同
じ符号を付している。FIG. 1 is a cross-sectional view of one embodiment of the semiconductor laser device of the present invention, in which parts corresponding to those of the conventional example shown in FIG.
この実施例が、上記従来例ともっとも異なるところ
は、ｐ型領域８の間に、高不純物濃度のｎ型領域９を、
その端部が前記領域８と重なるよう形成していることで
ある。ｎ型領域９はたとえばSiイオンを注入することに
よって形成される。そして、その不純物濃度は、ｐ型領
域８と重なっている部分がｎ型に反転する程度とする。
これにより、電極７の幅は活性層３の幅からの制約を実
質的に受けなくなる。The difference of this embodiment from the conventional example is that a high impurity concentration n-type region 9 is provided between p-type regions 8.
That is, the end portion is formed so as to overlap with the region 8. N-type region 9 is formed by implanting Si ions, for example. The impurity concentration is set so that the portion overlapping with the p-type region 8 is inverted to the n-type.
As a result, the width of the electrode 7 is not substantially restricted by the width of the active layer 3.
本実施例によれば、発光領域の活性層３の幅Ｗを0.5
μｍと狭くし、電極７の幅を２μｍとそれに比べて大幅
に広くすることができる。According to this embodiment, the width W of the active layer 3 in the light emitting region is set to 0.5.
The width of the electrode 7 can be made as wide as 2 .mu.m, which is significantly narrower.
なお、活性層３は厚さ100ÅのGaAs層と厚さ200ÅのGa
0.6Al0.4As層とを交互に11層積層した構造の多重量子井
戸型としている。The active layer 3 consists of a 100 Å thick GaAs layer and a 200 Å thick Ga layer.
The multi-quantum well type has a structure in which 11 layers of 0.6 Al 0.4 As layers are alternately laminated.
第２図にこの実施例の製造工程を示す。まず、有機金
属気相成長法で基板１上にクラッド層２、多重量子井戸
型の活性層３、クラッド層４およびｎ型GaAs層５を、順
次エピタキシャル成長させる。次に表面よりZnを選択的
に拡散し、ｐ型領域８を形成する。このときの拡散用マ
スクにはSiN膜を用いる。その後、レジストをマスクに
してイオン注入法によりSiを注入し、ｎ型領域９を作製
する。最後に、電極６、７をそれぞれ蒸着形成する。FIG. 2 shows the manufacturing process of this embodiment. First, the clad layer 2, the multiple quantum well type active layer 3, the clad layer 4 and the n-type GaAs layer 5 are sequentially epitaxially grown on the substrate 1 by the metal organic chemical vapor deposition method. Next, Zn is selectively diffused from the surface to form a p-type region 8. At this time, a SiN film is used as the diffusion mask. After that, Si is implanted by an ion implantation method using the resist as a mask to form the n-type region 9. Finally, the electrodes 6 and 7 are formed by vapor deposition, respectively.
第３図に得られたレーザ素子の電流−光出力特性の一
例を示す。これからも、この装置はそのしきい電流値が
4mAと低く、低電流駆動が可能であることがわかる。FIG. 3 shows an example of current-light output characteristics of the obtained laser device. The threshold current value of this device will continue to be
As low as 4mA, it can be seen that low current drive is possible.
発明の効果 本発明の半導体レーザ装置は、発光領域の活性層上の
第１の半導体層表面に沿ってこの層と同じ導電型の領域
が形成されているので、その上方に配置される電極の幅
が従来品に比べて広くすることができ、製造技術上の制
約が解消される。EFFECTS OF THE INVENTION In the semiconductor laser device of the present invention, since the region of the same conductivity type as this layer is formed along the surface of the first semiconductor layer on the active layer of the light emitting region, the electrode disposed above the region is formed. The width can be made wider than that of the conventional product, and the restriction on the manufacturing technology is eliminated.
第１図は本発明の半導体レーザ装置の断面図、第２図は
その製造工程図、第３図は電流−光出力特性図、第４図
は従来の半導体レーザ装置の断面図である。 １……半絶縁性GaAs基板、２……ｎ型クラッド層、３…
…活性層、４……ｎ型クラッド層、５……ｎ型GaAs層、
６、７……電極、８……ｐ型領域、９……ｎ型領域。1 is a sectional view of a semiconductor laser device of the present invention, FIG. 2 is a manufacturing process diagram thereof, FIG. 3 is a current-optical output characteristic diagram, and FIG. 4 is a sectional view of a conventional semiconductor laser device. 1 ... Semi-insulating GaAs substrate, 2 ... N-type cladding layer, 3 ...
... active layer, 4 ... n-type cladding layer, 5 ... n-type GaAs layer,
6, 7 ... Electrode, 8 ... P-type region, 9 ... N-type region.
フロントページの続き (72)発明者 山本 敦也 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 広瀬 正則 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 中村 晃 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Front Page Continuation (72) Inventor Atsushiya Yamamoto 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Masanori Hirose 1006 Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. Akira Nakamura 1006 Kadoma, Kadoma-shi, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
Claims (1)
第１の半導体層、前記第１の半導体層より禁制帯幅が小
さな層ならびにこの層よりもさらに禁制帯幅が小さい層
が交互に複数積層されてなる第２の半導体層、および第
３の半導体層と、前記第３の半導体層から前記第１の半
導体層に達する、前記第１の半導体層と反対の導電型の
複数の第１の領域と、前記第３の半導体層に、その表面
に沿って形成された、前記第１の半導体層と同じ導電型
の第２の領域と、前記第１、第２の領域上にそれぞれ形
成されている電極とを有し、前記第２の領域の端縁部が
前記第１の領域に達していることを特徴とする半導体レ
ーザ装置。1. A semiconductor substrate is sequentially laminated on a semi-insulating substrate,
A first semiconductor layer, a layer having a forbidden band width smaller than that of the first semiconductor layer, a second semiconductor layer in which a plurality of layers having a forbidden band width smaller than this layer are alternately laminated, and a third semiconductor A layer, a plurality of first regions having a conductivity type opposite to that of the first semiconductor layer, the first region reaching the first semiconductor layer from the third semiconductor layer, and the third semiconductor layer on the surface thereof. A second region of the same conductivity type as that of the first semiconductor layer, and electrodes formed on the first and second regions, respectively, which are formed along the second region of the second region. A semiconductor laser device, wherein an edge portion reaches the first region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26212487A JPH0828546B2 (en) | 1987-10-16 | 1987-10-16 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26212487A JPH0828546B2 (en) | 1987-10-16 | 1987-10-16 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01103891A JPH01103891A (en) | 1989-04-20 |
| JPH0828546B2 true JPH0828546B2 (en) | 1996-03-21 |
Family
ID=17371381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26212487A Expired - Fee Related JPH0828546B2 (en) | 1987-10-16 | 1987-10-16 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0828546B2 (en) |
-
1987
- 1987-10-16 JP JP26212487A patent/JPH0828546B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01103891A (en) | 1989-04-20 |
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