JPH0829960B2 - Ultraviolet laser optical components - Google Patents
Ultraviolet laser optical componentsInfo
- Publication number
- JPH0829960B2 JPH0829960B2 JP2210252A JP21025290A JPH0829960B2 JP H0829960 B2 JPH0829960 B2 JP H0829960B2 JP 2210252 A JP2210252 A JP 2210252A JP 21025290 A JP21025290 A JP 21025290A JP H0829960 B2 JPH0829960 B2 JP H0829960B2
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- Japan
- Prior art keywords
- glass body
- less
- silica glass
- ultraviolet laser
- ppb
- Prior art date
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Description
【発明の詳細な説明】 「産業上の利用分野」 本発明は、略360nm以下の高出力紫外光、より具体的
にはKrF若しくはArFエキシマレーザ光、YAG4倍高調波レ
ーザ光(266nm)その他の高出力紫外線レーザ光を利用
した各種装置に組込まれるレンズ、プリズム、フィル
タ、ウインドウ、ミラー、エタロン板、若しくはこれら
の部材の最終仕上げ加工前の半製品として機能し得る紫
外線レーザ用光学部材に関する。DETAILED DESCRIPTION OF THE INVENTION “Industrial field of application” The present invention relates to high-power ultraviolet light of approximately 360 nm or less, more specifically KrF or ArF excimer laser light, YAG 4th harmonic laser light (266 nm) and other The present invention relates to an optical member for an ultraviolet laser that can function as a lens, prism, filter, window, mirror, etalon plate, or a semi-finished product of these members before final finishing, which is incorporated in various devices using high-power ultraviolet laser light.
「従来技術」 近年、エレキシマレーザやYAG4倍高調波をはじめとす
る波長変換紫外線レーザは、LSI製造のためのリソグラ
フィー技術、光化学反応を利用する技術、切断研削の為
の加工技術、レーザ核融合技術に利用されるものとして
注目を集めている。"Conventional technology" In recent years, wavelength-converted ultraviolet lasers such as the excimer laser and the YAG 4th harmonic have been used in lithography technology for LSI manufacturing, technology utilizing photochemical reactions, processing technology for cutting and grinding, laser fusion. It is attracting attention as one used for technology.
又紫外線レーザを透過、伝送、屈折、反射、吸収、干
渉させることにより制御するレンズ、プリズム、フィル
ター、ウインドウ、ミラー、エタロン板、ファイバーの
素材としては、フッ化マグネシウム、フッ化カルシウ
ム、フッ化バリウム等のフッ化物もしくはシリカガラス
が利用できるが、加工性、寸法、脈理や屈折率の均質性
からシリカガラスが最もふさわしいものである。The materials for lenses, prisms, filters, windows, mirrors, etalon plates, and fibers that control ultraviolet lasers by transmitting, transmitting, refracting, reflecting, absorbing, and interfering are magnesium fluoride, calcium fluoride, barium fluoride. Fluoride such as or silica glass can be used, but silica glass is most suitable from the viewpoint of workability, size, striae and homogeneity of refractive index.
しかしながら、前記各種オプテイクスを構成するシリ
カガラスは略360nmから略160nmの紫外波長域の光が作用
した場合、他の電離放射線、例えばX線やγ線に比較し
て大幅に強い光学的ダメージを受けやすい。However, the silica glass constituting the various optics described above undergoes significantly stronger optical damage than other ionizing radiations such as X-rays and γ-rays when light in the ultraviolet wavelength range of about 360 nm to about 160 nm acts. Cheap.
例えば、紫外線レーザが長時間照射されるとシリカガ
ラスの網目構造が切断され、いわゆるE′センターと呼
ばれる略215nmの吸収バンドと、別の略260nm吸収バンド
が生成し、略360nmから略160nmの透過率を低下させ、光
学特性を劣化させてしまう。従って、シリカガラスを前
記波長域レーザに対して耐久性を向上させることは構造
上非常にむずかしい。For example, when an ultraviolet laser is irradiated for a long time, the network structure of silica glass is cut, and an absorption band of about 215 nm called a so-called E'center and another absorption band of about 260 nm are generated, and a transmission band of about 360 nm to about 160 nm is transmitted. Rate, and the optical characteristics are deteriorated. Therefore, it is structurally very difficult to improve the durability of silica glass with respect to the laser in the above wavelength range.
更にパルス発振レーザ、特に略250nm以下の短紫外域
におけるKrF若しくはArFエキシマレーザは、他のあらゆ
る種類の紫外光に比較して最も強いエネルギーを持って
おり、該エキシマレーザの照射により一層強い光学的ダ
メージを受けやすいことが確認されている。Furthermore, pulsed lasers, especially KrF or ArF excimer lasers in the short ultraviolet region of approximately 250 nm or less, have the strongest energy as compared to all other types of ultraviolet light, and the irradiation of the excimer laser provides a stronger optical energy. It has been confirmed that it is easily damaged.
「発明が解決しようとする課題」 かかる欠点を解消するために、本出願人は全方向脈理
フリーで複屈折率も認められず、泡及び蛍光の発生もな
い高純度高均質性のSUPRASIL−P10、SUPRASIL−1、SUP
RASIL−W1、(商品名、信越石英株式会社製)等の合成
シリカガラス体を開発したが、かかるガラス体はX線や
360nm以上の近紫外線には有効であるが、略360nm以下の
短紫外域レーザ、特に略250nm以下の短紫外域におけるK
rF若しくはArFエキシマレーザの照射においてはダメー
ジが極めて大きかった。[Problems to be Solved by the Invention] In order to eliminate such drawbacks, the applicant of the present invention is SUPRASIL-of high purity and high homogeneity, which is free of striae in all directions, has no birefringence, and does not generate bubbles or fluorescence. P10, SUPRASIL-1, SUP
We have developed synthetic silica glass bodies such as RASIL-W1 (trade name, manufactured by Shin-Etsu Quartz Co., Ltd.).
It is effective for near-ultraviolet rays of 360 nm or more, but K in the short ultraviolet region of approximately 360 nm or less, especially in the short ultraviolet region of approximately 250 nm or less.
Irradiation with rF or ArF excimer laser was extremely damaging.
本発明はかかる従来技術の欠点に鑑み、耐レーザ性と
高透過率を保証し得る紫外線レーザ用光学部材を提供す
る事を目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and an object thereof is to provide an optical member for an ultraviolet laser capable of guaranteeing laser resistance and high transmittance.
「課題を解決するための手段」 本発明者は、シリカガラス中の酸素ガスの存在が耐紫
外線レーザ性に強い影響を与え、他の溶存ガス、例えば
水素ガスの含有濃度が同じであれば酸素ガス含有濃度が
高ければ高いほど耐紫外線レーザ性が低下することを見
出し、高純度高均質の合成シリカガラス体、特にOH基を
10重量ppm以上含有させた高純度の合成シリカガラス体
を出発母材とし、該ガラス体を例えば不活性ガス雰囲気
下で且つ高温高圧下で所定時間維持させて、該ガラス体
中に含有するO2ガスを実質的に除去、より具体的には前
記ガラス体中のO2含有量を、真空中1000℃昇温時におけ
る酸素分子放出量換算で、略2×1018(molecules/m2)
以下に設定した紫外線レーザ用光学部材を提案する。"Means for Solving the Problem" The present inventor has found that the presence of oxygen gas in silica glass has a strong influence on the resistance to ultraviolet laser, and other dissolved gases, such as oxygen if the concentration of hydrogen gas is the same. It was found that the higher the gas content concentration, the lower the UV laser resistance, and the higher purity and more homogeneous synthetic silica glass body, especially OH group
A high-purity synthetic silica glass body containing 10 ppm by weight or more is used as a starting base material, and the glass body is maintained in an inert gas atmosphere and under a high temperature and high pressure for a predetermined time, and is contained in the glass body. 2 Gas is substantially removed, and more specifically, the O 2 content in the glass body is approximately 2 × 10 18 (molecules / m 2 ) in terms of the amount of released oxygen molecules when the temperature is raised to 1000 ° C. in vacuum.
An optical member for ultraviolet laser set as follows is proposed.
そして紫外線レーザ用レンズ等の紫外線レーザ用光学
部材において、レーザ光照射による光学的特性の劣化と
前記ガラス体中のO2含有量との関係を記載した刊行物は
本出願前に何等存在しない。In the optical member for ultraviolet laser such as the lens for ultraviolet laser, there is no publication before the application of the present application, which describes the relationship between the deterioration of the optical characteristics due to laser irradiation and the O 2 content in the glass body.
従って前記ガラス体中のO2含有量が多く存在する光学
用ガラス素体が、レーザ光照射により光学的特性の劣化
を受け易い事を突き止めた知見は本出願人のみが始めて
知り得た技術であり新規な事項であり、更にO2含有量と
OH基含有量の組合せも当然に新規で且つその創作過程に
おいて極めて困難性を有する発明である。Therefore, the knowledge that the optical glass body having a large amount of O 2 in the glass body is susceptible to the deterioration of the optical characteristics due to the laser light irradiation is the technology that only the applicant of the present invention knew. There is a novel matter, and further O 2 content
Naturally, the combination of OH group contents is a novel invention, which is extremely difficult in its creation process.
尚、高純度の合成シリカガラス体とは、Li,Na及びK
からなるアルカリ金属含有量を150ppb以下、Mg及びCaか
らなるアルカリ土類金属含有量を100ppb以下、Ti,Cr,F
e,Ni及びCuの遷移金属含有量を50ppb以下に設定したガ
ラス体をさす。In addition, high purity synthetic silica glass means Li, Na and K
Alkali metal content consisting of 150 ppb or less, alkaline earth metal content consisting of Mg and Ca 100 ppb or less, Ti, Cr, F
A glass body in which the transition metal content of e, Ni, and Cu is set to 50 ppb or less.
また前記合成シリカガラス体は、好ましくは、三軸方
向の脈理が除去され且つ屈折率変動幅(Δn)を2×10
-6以下に設定したガラス体であるのが良く、 更に、本発明はKrF若しくはArFエキシマレーザ光、YA
G4倍高調波レーザ光(266nm)に有効であるが、これの
みに限定されない。The synthetic silica glass body preferably has striae in the triaxial direction removed and has a refractive index variation width (Δn) of 2 × 10 5.
-6 is preferably a glass body set below, further, the present invention, KrF or ArF excimer laser light, YA
It is effective for G4 harmonic laser light (266 nm), but is not limited thereto.
「作用」 さて、このように酸素ガスの存在が何故耐紫外線レー
ザ性に悪影響を及ぼすのかは本出願人のみが始めて知り
得た技術であり新規な事項である為に、その理論的解明
は必ずしも明確でないが、下記の様に推測される。"Operation" Now, the reason why the presence of oxygen gas adversely affects the resistance to ultraviolet laser is a technology that only the applicant of the present invention knew for the first time, and it is a novel matter. Although it is not clear, it is assumed as follows.
即ち、シリカガラス体に紫外線が照射されると、該ガ
ラス体中の含有酸素ガスが紫外線エネルギーを吸収して
光化学反応により各種励起体、例えばO,O2,O3の励起体
が生成し、これらの励起体が石英ガラス構造中の酸素元
素にエネルギーを伝達し、結果として石英ガラス構造中
の網目構造を切断してE′センター(イープライムセン
ター)やNBOHセンター(ノンブリッジオキシジェンホー
ルセンター)等の吸収バンドを形成するものと思慮され
る。That is, when the silica glass body is irradiated with ultraviolet rays, oxygen gas contained in the glass body absorbs ultraviolet energy to generate various exciters by a photochemical reaction, for example, O, O 2 , and O 3 exciters are generated, These exciters transfer energy to the oxygen element in the silica glass structure, and as a result, the network structure in the silica glass structure is cut and the E'center (E-prime center), NBOH center (Non-Bridge Oxygen Hall center), etc. Is considered to form an absorption band of.
この為本出願人は先に前記ガラス体中に水素ガスをド
ープさせ前記E′センターやNBOHセンターと水素ガスと
反応させることにより前記吸収バンドを補修せんとする
技術〔特願平1−145226号〕を提案し、かかる技術も耐
レーザ性を向上させるのに有効であるが、かかる技術は
O,O2,O3の励起体の生成を前提とする対処療法である。For this reason, the present applicant has previously proposed a technique for repairing the absorption band by doping the glass body with hydrogen gas and reacting it with the E'center or NBOH center [Japanese Patent Application No. 1-145226]. ], And such a technique is also effective in improving the laser resistance, but such a technique is
This is a coping therapy that assumes the generation of O, O 2 , O 3 exciters.
又本出願人は更に、前記シリカガラス体の網目構造中
に存在する酸素欠陥を極力除去する技術〔特願昭63−21
361号(特開平1−197343号)〕も開示しているが、か
かる技術も、酸素欠陥が存在しないためにレーザ照射当
初において前記吸収バンドの形成が抑制されるが、前記
シリカガラス体中に含有酸素ガス〔分子としての酸素〕
が存在する限りO,O2,O3の励起体が生成するという図式
には変りがなく、結果として耐レーザ性の低下を完全に
は防止し得ない。Further, the present applicant has further proposed a technique for removing oxygen vacancies present in the network structure of the silica glass body as much as possible [Japanese Patent Application No. 63-21
No. 361 (JP-A-1-197343)] is also disclosed, but such a technique also suppresses the formation of the absorption band at the beginning of laser irradiation due to the absence of oxygen defects. Contained oxygen gas [oxygen as a molecule]
As long as the existence of the above exists, there is no change in the scheme that the O, O 2 and O 3 exciters are formed, and as a result, the reduction in laser resistance cannot be completely prevented.
そこで本発明は、前記励起体の生成を根本から除去す
るために、従来の刊行物にない全く新規な技術として、
前記シリカガラス体中に含有する酸素ガス〔分子として
の酸素〕自体を実質的に除去、より具体的には前記ガラ
ス体中のO2含有量を、真空中1000℃昇温時における酸素
分子放出量換算で、略2×1018(molecules/m2)以下に
設定したものである。Therefore, the present invention is, as a completely new technique not existing in conventional publications, for removing the generation of the exciter from the root,
The oxygen gas (oxygen as a molecule) contained in the silica glass body is substantially removed, and more specifically, the O 2 content in the glass body is released as oxygen molecules at a temperature of 1000 ° C. in vacuum. The amount is set to about 2 × 10 18 (molecules / m 2 ) or less.
尚、前記ガラス体中に含有するO2ガスの除去は、単に
還元性若しくは真空雰囲気下で加熱処理したのみではそ
の除去は中々困難であり、そこで本発明は前記高純度均
質の合成シリカガラス体を、ヘリウムやアルゴン等の希
ガス若しくは窒素ガスを含めたいわゆる不活性ガス雰囲
気下で且つ熱間等方圧加圧法(HIP)処理にて所定時間
維持させて除去させている。Incidentally, the removal of O 2 gas contained in the glass body is quite difficult to remove only by heat treatment in a reducing atmosphere or a vacuum atmosphere, and therefore, the present invention provides the high-purity homogeneous synthetic silica glass body. In a so-called inert gas atmosphere containing a rare gas such as helium or argon, or a nitrogen gas, and is maintained and removed for a predetermined time by a hot isostatic pressing (HIP) process.
更に、前記ガラス体中にOH基を含有、より具体的には
10重量ppm以上のOH基を含有させると、OH基の存在がHIP
処理時の高均質性の維持とともに耐紫外線レーザ性とも
に好ましい影響が生じせしめる。Further, containing an OH group in the glass body, more specifically
If 10 wtppm or more of OH group is contained, the existence of OH group
Along with maintaining high homogeneity during processing, it has a favorable effect on ultraviolet laser resistance.
その理由は、OH基はガラス網目構造の終端部となるも
ので、いわゆるネットワークターミネータである。この
ネットワークターミネータが適量存在すると、ガラス網
目構造中の元素間の距離の狂いや元素間の結合角度のね
じれをリラックスさせて、安定化させ、更にOH基の水素
がE′センター等の吸収バンドの修復に作用するものと
推定される。The reason is that the OH group serves as the terminal part of the glass network structure and is a so-called network terminator. When this network terminator is present in an appropriate amount, the deviation of the distance between elements in the glass network structure and the twist of the bond angle between elements are relaxed and stabilized, and further, the hydrogen of the OH group is absorbed in the absorption band such as the E ′ center. It is presumed to act on repair.
「実施例」 先ず本発明者は、3軸方向における脈理が除去されて
おり、光使用領域における屈折率変動幅(Δn)を2×
10-6以下で且つ複屈折率を5nm/cm以下に抑えたSUPRASIL
P−10の内、OH基が略700重量ppmのシリカガラス体を選
択し、該シリカガラス体を切断、研削加工して直径50×
t20mmの試験片を作成した後、該試験片を、クリーンな
ステンレススチールジャケット内にタングステンヒータ
を配置した電気炉内に設置し、1×10-2(Toor)以下の
真空雰囲気下で800〜1000℃に加熱しながら脱ガス処理
を行なった後、室温まで冷却した。この処理の目的は、
本発明の効果を明確に確認するため、耐紫外線レーザ性
に影響を与えるシリカガラス中の溶存ガスを同一条件で
脱ガスさせ、実験上の出発材料として溶存ガスに関して
同一条件としておくためであり、工業上の必須条件では
ない。[Example] First, the present inventor has removed striae in the three-axis directions, and the refractive index fluctuation width (Δn) in the light use region is 2 ×.
SUPRASIL that is less than 10 -6 and has a birefringence of less than 5 nm / cm
Of P-10, OH group is selected about 700 wtppm silica glass body, the silica glass body is cut and ground to a diameter of 50 ×
After making a test piece of t 20 mm, the test piece was placed in an electric furnace in which a tungsten heater was placed in a clean stainless steel jacket, and 800 ~ 800 in a vacuum atmosphere of 1 × 10 -2 (Toor) or less. After degassing while heating to 1000 ° C., it was cooled to room temperature. The purpose of this process is
In order to clearly confirm the effect of the present invention, the dissolved gas in the silica glass that affects the ultraviolet laser resistance is degassed under the same conditions, so that the same conditions are set for the dissolved gas as the starting material for the experiment. Not an industrial requirement.
次に、前記試験片を、熱処理を行わないもの(No.
6)、HIP処理法(熱間等方圧加圧法)により、アルゴン
ガス100%雰囲気で、1000℃、2000atm20hrsの処理を行
なったもの(No.1)、同様の処理条件下でヘリウムガス
100%雰囲気でHIP処理を行なったもの(No.2)、同様の
処理条件下で大気雰囲気でHIP処理を行なったもの(No.
3)、前記脱ガス処理を行ったクリーンな電気炉内でヘ
リウム100%雰囲気で1000℃、1atm、20hrsの処理を行な
ったもの(No.4)、大気ガス雰囲気下でNo,4と同様な処
理で行なったもの(No.5)を用意し、次にこれらの処理
済試験片を切断、研磨加工し、20×20×t1mmの酸素ガス
放出量測定用サンプル、30×30×t10mmの耐KrFエキシマ
レーザ性評価用サンプルを作成した。Next, the test piece that was not heat-treated (No.
6), HIP treatment (hot isostatic pressing) in 100% argon gas atmosphere, 1000 ° C, 2000atm for 20hrs (No.1), helium gas under the same treatment conditions
One that was HIP-treated in 100% atmosphere (No.2), one that was HIP-treated in the atmosphere under the same treatment conditions (No.2).
3) In a clean electric furnace that has been degassed as above, treated at 1000 ° C, 1atm, 20hrs in a 100% helium atmosphere (No. 4), the same as No. 4 in an atmospheric gas atmosphere. Prepare the one that was processed (No. 5), then cut and polish these processed test pieces, 20 × 20 × t 1 mm oxygen gas emission measurement sample, 30 × 30 × t 10 mm A sample for evaluation of KrF excimer laser resistance was prepared.
尚、酸素ガス測定は、前記サンプルをセットした石英
チャンバー内を真空雰囲気にした後、4℃/minで1000℃
まで昇温させた後、該1000℃にて2hr保持する。その時
放出される酸素ガスその他の各種ガスを四重極型質量分
析形に導入してその放出量を測定する方法である。In addition, the oxygen gas measurement was performed at 4 ° C./min at 1000 ° C. after placing the sample chamber in a quartz chamber in a vacuum atmosphere.
After heating up to 1000 ° C., the temperature is maintained for 2 hours. This is a method in which oxygen gas and other various gases released at that time are introduced into a quadrupole mass spectrometer and the amount released is measured.
又耐KrFエキシマレーザ性評価では、パルス当りのエ
ネルギー密度を400mJ/cm2,pとし、100Hzにて連続照射を
行ないながら、E′センター吸収バンドの検出のため透
過率計にて、5,8eV(略215nm)の透過率の経時変化を測
定し、前記各サンプルにおける内部透過率が1%低下す
るまでの照射パルス数と、屈折率の均質性を評価するた
めに30φエリアにおける照射パルス1×106Pulses照射
前後における屈折率分布の均質度の経時変化を各々測定
した。Moreover, in the KrF excimer laser resistance evaluation, the energy density per pulse was set to 400 mJ / cm 2 , p and continuous irradiation was performed at 100 Hz, while a transmittance meter was used to detect the E'center absorption band. By measuring the change with time of the transmittance (approximately 215 nm), the number of irradiation pulses until the internal transmittance of each sample decreased by 1%, and the irradiation pulse 1 × in the 30φ area in order to evaluate the homogeneity of the refractive index The temporal changes in the homogeneity of the refractive index distribution before and after irradiation with 10 6 pulses were measured.
そして前記測定結果を表1及び表2に示す。 The measurement results are shown in Tables 1 and 2.
その結果、前記サンプルのうち、アルゴン及びヘリウ
ム雰囲気下でHIP処理したものは、いずれも内部透過率
の低下も屈折率変化の均質性のいずれについても経時変
化が実質的になく好ましい耐KrFエキシマレーザ性を得
ると共に、その酸素ガス放出量はいずれも略1×10
18(molecules/m2)以下であった。(No.1,2) 又ヘリウム100%雰囲気で常圧下で熱処理を行ったも
のについては経時変化は多少存在するが、熱処理を行わ
なかったものに比較して数段耐レーザ性が向上している
事が確認された。(No.4) 一方大気ガス雰囲気下でHIP処理したものについて
は、内部透過率屈折率の均質性のいずれも大幅に悪化し
(No.3)、又大気雰囲気で常圧下で熱処理を行ったもの
についてはNo.3程ではないが耐レーザ性が悪化している
ことが理解される。As a result, among the samples, those subjected to HIP treatment in an atmosphere of argon and helium, both of which have a decrease in internal transmittance and the homogeneity of the change in refractive index, are substantially free of changes with time, and are preferable KrF excimer laser resistant. And the amount of released oxygen gas is about 1 x 10
It was 18 (molecules / m 2 ) or less. (No. 1 and 2) Also, although there is some change with time in the case of heat treatment under normal pressure in a 100% helium atmosphere, the laser resistance is improved by several steps compared to the case of not performing heat treatment. It was confirmed that (No.4) On the other hand, in the case of HIP treatment in the atmospheric gas atmosphere, both of the internal transmittance and the homogeneity of the refractive index were significantly deteriorated (No.3), and the heat treatment was performed under the atmospheric pressure under the atmospheric pressure. It is understood that the laser resistance of the products is worse than that of No. 3.
従って前記実験結果より耐レーザ性の向上は、酸素ガ
ス放出量、即ちシリカガラス体中の含有ガスと反比例関
係に相関があることが確認された。Therefore, it was confirmed from the above experimental results that the improvement of the laser resistance is inversely proportional to the amount of released oxygen gas, that is, the gas contained in the silica glass body.
次に、本発明者は、シリカガラス中のOH基量が耐紫外
線レーザ性にいかなる影響を与えるかを調べるために、
前記実施例と同様に高純度四塩化ケイ素原料を準備した
後、CVDスート再溶融法(スート法)にて、OH基量を3
重量ppm以下、略10wt.ppm、略220wt.ppm含有する高純度
シリカガラス塊を合成し、該ガラス塊を切断、研削加工
して直径50×t20mmの試験片を作成した後、前記と同様
な脱ガス処理−室温冷却を行った。Next, the inventor of the present invention, in order to investigate what effect the amount of OH groups in the silica glass has on the ultraviolet laser resistance,
After preparing a high-purity silicon tetrachloride raw material as in the above example, the OH group content was adjusted to 3 by the CVD soot remelting method (soot method).
Weight ppm or less, about 10 wt.ppm, about 220 wt.ppm containing high-purity silica glass lumps are synthesized, and the glass lumps are cut and ground to prepare test pieces with a diameter of 50 × t 20 mm, and then the same as above. Degassing-cooling at room temperature.
そして前記試験片をHIP処理法により、アルゴンガス1
00%雰囲気で、1000℃、2000atm20hrsの処理を行なった
もの(No.7,8,9)について、前記実施例と同様にKrFエ
キシマレーザを照射して、内部透過率の低下と屈折率変
化の均質性の経時変化について測定したところ、OH基に
ついても相関があり、3重量ppm以下の試験片No.7の耐
レーザ性については、好ましい結果が得られなかった。Then, the test piece was subjected to HIP treatment by argon gas 1
About the thing (No.7,8,9) which performed 1000 degreeC and 2000atm20hrs in 00% atmosphere, it irradiated with KrF excimer laser similarly to the said Example, and the fall of internal transmittance and refractive index change When the change in homogeneity with time was measured, the OH groups were also correlated, and favorable results could not be obtained for the laser resistance of test piece No. 7 of 3 ppm by weight or less.
尚、前記各サンプルについて、原子吸光光度法及び中
性子放射化分析法によって、不純物分析を行なったとこ
ろLi,Na,Kの合計が150wt.ppb以下、Mg,Caの合計が100w
t.ppb以下、Ti,Cr,Fe,Ni,Cuの合計が50wt.ppb以下であ
り、各種加熱処理によっても高純度が保持されていた。Incidentally, for each of the samples, by atomic absorption spectrophotometry and neutron activation analysis, when the impurity analysis was performed, the total of Li, Na, K is 150 wt.ppb or less, the total of Mg, Ca is 100 w.
It was less than t.ppb and the total of Ti, Cr, Fe, Ni, Cu was less than 50 wt.ppb, and high purity was maintained even by various heat treatments.
又比較供試体として、三軸方向より強い脈理が認めら
れかつ、屈折率変動幅(Δn)1×10-5のSUPRASIL−P3
0を出発母材として、Arガス100%、1000℃、2000atmの
条件にてHIP処理を行った結果、屈折率の均質性の面で
光学部材としては使えるものは得られなかった。As a comparative sample, SUPRASIL-P3 with stronger striae than the triaxial direction and refractive index fluctuation range (Δn) of 1 × 10 -5 was used.
As a result of HIP treatment using 0 as a starting base material under the conditions of Ar gas 100%, 1000 ° C., 2000 atm, a material that could be used as an optical member was not obtained in terms of homogeneity of refractive index.
「発明の効果」 以上記載したように、本発明によれば、紫外線レーザ
を長時間照射した場合においても光学特性も屈折率の均
質性も劣化する事なく、耐レーザ性と高透過率を保証し
得る紫外線レーザ用光学部材を得る事が出来る。 [Advantages of the Invention] As described above, according to the present invention, laser resistance and high transmittance are guaranteed without deterioration of optical characteristics and homogeneity of refractive index even when irradiated with an ultraviolet laser for a long time. It is possible to obtain a possible optical member for ultraviolet laser.
等の種々の著効を有す。 It has various remarkable effects.
Claims (3)
を150ppb以下、Mg及びCaからなるアルカリ土類金属含有
量を100ppb以下、Ti,Cr,Fe,Ni及びCuの遷移金属含有量
を50ppb以下に設定した高純度合成シリカガラス体から
なり、 該ガラス体中にOH基を10重量ppm以上含有させるととも
に、 前記ガラス体中のO2含有量を、真空中1000℃昇温時にお
ける酸素分子放出量換算で、略2×1018(molecules/
m2)以下に設定した事を特徴とする紫外線レーザ用光学
部材。1. An alkali metal content of Li, Na and K of 150 ppb or less, an alkaline earth metal content of Mg and Ca of 100 ppb or less, and a transition metal content of Ti, Cr, Fe, Ni and Cu. Consisting of a high-purity synthetic silica glass body set to 50 ppb or less, and containing 10 wt ppm or more of OH groups in the glass body, the O 2 content in the glass body, oxygen at a temperature of 1000 ℃ in vacuum Approximately 2 × 10 18 (molecules /
m 2 ) An optical member for an ultraviolet laser, which is set to the following.
方向の脈理が除去され且つ屈折率変動幅(Δn)を2×
10-6以下に設定したガラス体である請求項1)記載の紫
外線レーザ用光学部材2. The highly homogeneous synthetic silica glass body is free from striae in the triaxial direction and has a refractive index fluctuation width (Δn) of 2 ×.
The optical member for ultraviolet laser according to claim 1, which is a glass body set to 10 -6 or less.
活性ガス雰囲気下で且つ熱間等方圧加圧法(HIP)処理
にて所定時間維持させる事により、 該ガラス体中のO2含有量を、真空中1000℃昇温時におけ
る酸素分子放出量換算で、略2×1018(molecules/m2)
以下に設定した事を特徴とする紫外線レーザ用光学部
材。3. A high-purity, highly-homogeneous synthetic silica glass body is maintained in an inert gas atmosphere and hot isostatic pressing (HIP) treatment for a predetermined time to obtain O 2 in the glass body. The content is approximately 2 × 10 18 (molecules / m 2 ) in terms of the amount of released oxygen molecules at a temperature rise of 1000 ° C in vacuum.
An optical member for an ultraviolet laser characterized by being set as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2210252A JPH0829960B2 (en) | 1990-08-10 | 1990-08-10 | Ultraviolet laser optical components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2210252A JPH0829960B2 (en) | 1990-08-10 | 1990-08-10 | Ultraviolet laser optical components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0497922A JPH0497922A (en) | 1992-03-30 |
| JPH0829960B2 true JPH0829960B2 (en) | 1996-03-27 |
Family
ID=16586304
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2210252A Expired - Fee Related JPH0829960B2 (en) | 1990-08-10 | 1990-08-10 | Ultraviolet laser optical components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0829960B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5729090A (en) * | 1995-02-21 | 1998-03-17 | General Electric Company | Sodium halide discharge lamp |
| US6376401B1 (en) | 1998-09-07 | 2002-04-23 | Tosoh Corporation | Ultraviolet ray-transparent optical glass material and method of producing same |
| DE10308466A1 (en) * | 2003-02-21 | 2004-09-02 | Carl Zeiss Smt Ag | Producing quartz glass material used in microlithography-projection devices comprises minimizing the amount of peroxide defects in the material |
| WO2005105685A1 (en) | 2004-04-28 | 2005-11-10 | Asahi Glass Company, Limited | Optical member made of synthetic quartz glass, and process for its production |
| US7934390B2 (en) | 2006-05-17 | 2011-05-03 | Carl Zeiss Smt Gmbh | Method for manufacturing a lens of synthetic quartz glass with increased H2 content |
| KR20120092580A (en) | 2009-10-30 | 2012-08-21 | 아사히 가라스 가부시키가이샤 | Optical member for deep ultraviolet and process for producing same |
| JP7060386B2 (en) | 2017-04-26 | 2022-04-26 | 東ソ-・エスジ-エム株式会社 | Ultraviolet resistant quartz glass and its manufacturing method |
| CN110612274B (en) | 2017-04-26 | 2022-04-01 | 东曹石英素材股份有限公司 | Ultraviolet-resistant quartz glass and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6275604A (en) * | 1985-09-30 | 1987-04-07 | Mitsubishi Metal Corp | Light transmitting line having resistance to radiant rays |
| JPH0791084B2 (en) * | 1988-09-14 | 1995-10-04 | 信越化学工業株式会社 | Ultraviolet-resistant synthetic quartz glass and method for producing the same |
| JPH02124739A (en) * | 1988-10-31 | 1990-05-14 | Shin Etsu Chem Co Ltd | Synthetic quartz glass and its production |
-
1990
- 1990-08-10 JP JP2210252A patent/JPH0829960B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0497922A (en) | 1992-03-30 |
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