JPH0830760B2 - Method for manufacturing radiant light transmitting thin film and radiant light transmitting window having radiant light transmitting thin film manufactured by the method - Google Patents
Method for manufacturing radiant light transmitting thin film and radiant light transmitting window having radiant light transmitting thin film manufactured by the methodInfo
- Publication number
- JPH0830760B2 JPH0830760B2 JP1265079A JP26507989A JPH0830760B2 JP H0830760 B2 JPH0830760 B2 JP H0830760B2 JP 1265079 A JP1265079 A JP 1265079A JP 26507989 A JP26507989 A JP 26507989A JP H0830760 B2 JPH0830760 B2 JP H0830760B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light transmitting
- radiant light
- beryllium
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims description 46
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052790 beryllium Inorganic materials 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 230000005469 synchrotron radiation Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000002788 crimping Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 15
- 239000010408 film Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- DFULNEJUIZSEEC-UHFFFAOYSA-N copper;nitric acid Chemical compound [Cu].O[N+]([O-])=O.O[N+]([O-])=O DFULNEJUIZSEEC-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920001973 fluoroelastomer Polymers 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
Landscapes
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、シンクロトロン放射光を用いて、超LSI等
の回路パターンをSiウェハ等の被露光板状体に転写せし
める露光装置における放射光透過薄膜の製造方法及びそ
の方法により製造された放射光透過薄膜を有する放射光
透過窓に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to synchrotron radiation, which is used in an exposure apparatus for transferring a circuit pattern of a VLSI or the like onto an exposed plate-like body such as a Si wafer. The present invention relates to a method of manufacturing a transmission thin film and a radiation light transmission window having a radiation light transmission thin film manufactured by the method.
半導体（LSI）の高集積化技術の進歩に伴い、マスク
上のパターンをレジストを付着したSiウェハの上に転写
する半導体リソグラフィ装置において、軟Ｘ線を含むシ
ンクロトロンの放射光の利用が注目されるようになっ
た。With the progress of high integration technology of semiconductors (LSI), the use of synchrotron radiation including soft X-rays has attracted attention in a semiconductor lithography apparatus that transfers a pattern on a mask onto a Si wafer having a resist attached. It became so.
この放射光は、第６図に示されるように、高真空の電
子線蓄積リング（100）内で光速に近い速さの電子を偏
向磁石（101）の磁界により曲げた時に電子軌道の接線
方向に放射される電磁波であるが、平行性がよく、且つ
強い軟Ｘ線が得られるため、線幅がサブミクロンクラス
になる超LSIリソグラフィのＸ線源として期待されてい
る。As shown in FIG. 6, this emitted light is tangential to the electron orbit when electrons at a speed close to the speed of light are bent by the magnetic field of the deflection magnet (101) in the high vacuum electron beam storage ring (100). Although it is an electromagnetic wave that is radiated to the X-ray, it is expected to be an X-ray source for VLSI lithography whose line width is in the submicron class because it has good parallelism and strong soft X-rays can be obtained.
シンクロトロン放射光を用いる実際の露光装置では、
電子蓄積リング（100）から発生せられた放射光がビー
ムライン（102）を通って転写装置（110）内に導かれ、
その内部でＸ線マスク（図示なし）のパターンをウェハ
駆動ステージ（図示なし）等を用いてウェハ上のレジス
トに転写する構成となっている。In an actual exposure apparatus that uses synchrotron radiation,
Radiation light generated from the electron storage ring (100) is guided into the transfer device (110) through the beam line (102),
The structure of the X-ray mask (not shown) is transferred to the resist on the wafer inside the wafer using a wafer drive stage (not shown).
ビームライン（102）の内部は、電子蓄積リング（10
0）に悪影響を及ぼさないように高真空に保たれてお
り、一方、転写装置（110）は、マスクの温度上昇を抑
えるため、その周りをチャンバ（111）で囲んで内部が
大気や他のガス（Ｘ線吸収の少ないヘリウムガス等）で
満たされている。シンクロトロン放射光の光源側（図で
は電子蓄積リング（100）とビームライン（102））と転
写装置（110）との間には、前者の高真空と後者の雰囲
気とを隔て、且つ放射光の一部を透過可能なベリリウム
薄膜等で構成される放射光透過薄膜Ｘのある放射光透過
窓（200）が設けられている。Inside the beam line (102) is the electron storage ring (10
0) is kept in a high vacuum so as not to adversely affect it. On the other hand, the transfer device (110) is surrounded by a chamber (111) in order to suppress the temperature rise of the mask, and the inside is exposed to the atmosphere and other It is filled with gas (helium gas, etc., which absorbs less X-rays). Between the light source side of the synchrotron radiation (electron storage ring (100) and beam line (102) in the figure) and the transfer device (110), the former high vacuum and the latter atmosphere are separated from each other, and the radiation A radiant light transmission window (200) having a radiant light transmission thin film X composed of a beryllium thin film or the like capable of transmitting a part of the is provided.
第７図は、このような放射光透過薄膜Ｘの取付けられ
た放射光透過窓の従来例を示す断面図である。同図に示
すように、ビームライン（102）の真空フランジ（103）
にＯリング（40）を介して放射光透過薄膜Ｘの周辺部が
取付けられ、更にその上から止めフランジ（104）をク
ランプ（105）によって圧着せしめている。FIG. 7 is a cross-sectional view showing a conventional example of a radiation transmitting window to which such radiation transmitting thin film X is attached. As shown in the figure, the vacuum flange (103) of the beam line (102)
A peripheral portion of the radiant light transmitting thin film X is attached to the above through an O-ring (40), and a stop flange (104) is crimped by a clamp (105) from above.
放射光の照射によってマスクパターンの転写を行なう
場合に、実用的なスループットを得るためには、放射光
透過薄膜Ｘの膜厚を薄くして、強い放射光を大きな面積
にわたって照射することが重要である。When a mask pattern is transferred by irradiation with radiant light, it is important to reduce the film thickness of the radiant light transmitting thin film X and irradiate strong radiant light over a large area in order to obtain a practical throughput. is there.
しかし、ビームライン（102）内と転写装置のチャン
バ（111）内雰囲気との間にはかなりの圧力差があるた
め、放射光透過薄膜Ｘは撓み、図示したようにビームラ
イン（102）側に膨出することになる。その撓み量は、
膜厚が薄い程、また、膜面積が大きい程大きくなり、上
記放射光透過窓の構成では、膜周辺部はその半径方向に
引っ張られ、ずれることになる。その時Ｏリング（40）
による弱い締め付けでは放射光透過薄膜Ｘに皺を生じる
ため、この皺を作る力によってＯリング（40）が持ち上
げられ、隙間を生じることになる。このためガス漏れが
発生し、電子蓄積リング（100）内を高真空状態に保っ
ておくことができなくなり、稼動不可能になることがあ
る。However, since there is a considerable pressure difference between the inside of the beam line (102) and the atmosphere inside the chamber (111) of the transfer device, the radiant light transmitting thin film X bends, and as shown in the figure, it is located on the beam line (102) side. It will swell. The amount of deflection is
The smaller the film thickness and the larger the film area, the larger the film thickness. In the configuration of the radiation transmitting window, the film peripheral portion is pulled in the radial direction and is displaced. At that time, O-ring (40)
Since the radiant light transmitting thin film X is wrinkled by the weak tightening due to, the O-ring (40) is lifted by the wrinkling force and a gap is created. As a result, gas leakage occurs, and it becomes impossible to keep the inside of the electron storage ring (100) in a high vacuum state, which may render it inoperable.
また、締め付けの力が不均一な場合、当然のことなが
ら、皺の発生はより顕著となり、安全に動作する放射光
透過窓を、薄膜Ｘを用いて歩留りよく作成することは極
めて困難となる。Further, when the tightening force is non-uniform, as a matter of course, the generation of wrinkles becomes more remarkable, and it becomes extremely difficult to make a radiation light transmitting window that operates safely using the thin film X with high yield.
本発明は従来技術の以上のような問題に鑑み創案され
たもので、特定の構造を有す放射光透過薄膜の製造方法
を提供すると共に、その方法によって製造された放射光
透過薄膜を用い、取付け部での膜のずれの発生がなく、
従って、隙間の生じないような放射光透過窓を実現する
ものである。The present invention was conceived in view of the above problems of the prior art, and provides a method for producing a radiation light transmitting thin film having a specific structure, using the radiation light transmitting thin film produced by the method, There is no displacement of the film at the mounting part,
Therefore, it is possible to realize a radiant light transmission window that does not cause a gap.
従来技術での上記の問題点は、放射光透過薄膜ＸがＯ
リング（40）を介して真空フランジ（103）と止めフラ
ンジ（104）によって機械的に圧着されているにすぎ
ず、取付け部は完全に不動構造ではなく、このために強
い応力が作用すると、ずれが発生することに起因する。
従って、薄膜Ｘを真空フランジ（103）もしくは止めフ
ランジ（104）のいずれか一方に完全な不動状態で取付
けることによって上記の問題点を解決することが可能と
なる。The above-mentioned problems in the prior art are that the radiation transmitting thin film X is O
It is only mechanically crimped by the vacuum flange (103) and the stop flange (104) via the ring (40), the mounting part is not completely immovable structure, which makes it possible Due to the occurrence of.
Therefore, the above problem can be solved by mounting the thin film X on either the vacuum flange (103) or the stop flange (104) in a completely immovable state.
本発明は、第１図（ａ）に示すように、ベリリウム金
属の薄膜（１）を平滑な金属よりなる基板（２）上に、
真空蒸着法等の物理的手法やめっき法等の化学的手法
で、広い面積にわたり、強固に、均一に付着せしめつ
つ、成長させ、成長後に該基板（２）をその周辺部を残
してエッチング等の手法で除去し、第１図（ｂ）に示す
ような、放射光透過及び雰囲気隔離作用を有する薄膜
（１）と該薄膜（１）の取付けられた基板（２）の残存
枠部（2a）の一体構造体を作成して、該残存枠部（2a）
をベリリウム薄膜取付け部材とすることにより、薄膜
（１）を不動状態としたことを特徴とし、これにより、
薄膜（１）と枠部（2a）間のずれに伴う隙間の発生が防
止できる。According to the present invention, as shown in FIG. 1 (a), a thin film (1) of beryllium metal is placed on a substrate (2) made of a smooth metal,
By a physical method such as a vacuum deposition method or a chemical method such as a plating method, the substrate (2) is grown over a wide area while firmly and uniformly adhering it, and after the growth, the substrate (2) is left with its peripheral portion left unetched. The thin film (1) having a radiant light transmitting and atmosphere separating effect and the remaining frame portion (2a) of the substrate (2) to which the thin film (1) is attached, as shown in FIG. 1 (b). ) Of the remaining frame part (2a)
Is used as a beryllium thin film attachment member, so that the thin film (1) is immovable.
It is possible to prevent the generation of a gap due to the displacement between the thin film (1) and the frame portion (2a).
前記一体構造体の枠部（2a）は、第２図に示すように
Ｏリング（４）等を介してビームラインの真空フランジ
（３）に、通常の真空シールを行なう手法によりボルト
等で締め付けられ、放射光透過窓として完成される。As shown in FIG. 2, the frame portion (2a) of the integrated structure is fastened with bolts or the like by a method of performing a normal vacuum seal to the vacuum flange (3) of the beam line via the O-ring (4) or the like. And completed as a radiation transmitting window.
添付図面に従い、本発明の具体的実施例を以下に説明
する。Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
第３図（ａ）に示すように、直径50mmで厚さが3mmあ
り、その中央に径30mm、深さ2.7mmの凹みを持った無酸
素銅製（純度99.99％）の基板（20）を準備し、その一
部に、第３図（ｂ）に示すように金ペースト（21）を塗
布し、乾燥後、銅板の平坦な面上に真空蒸着により、ベ
リリウム（10）を約20μｍの厚みで製膜した。真空蒸着
装置より取出し、銅に関しては可溶であり且つベリリウ
ムと金は不溶な濃硝酸によって、露出した銅部分をエッ
チングし、第３図（ｃ）に示すような、窓作用をするベ
リリウム薄膜（10）と無酸素銅の残存枠部（20a）の一
体構造体を作成した。As shown in Fig. 3 (a), prepare a substrate (20) made of oxygen-free copper (purity 99.99%) with a diameter of 50 mm and a thickness of 3 mm, and a recess with a diameter of 30 mm and a depth of 2.7 mm in the center. Then, as shown in FIG. 3 (b), a gold paste (21) is applied to a part of it, and after drying, vacuum deposition is performed on the flat surface of the copper plate to deposit beryllium (10) in a thickness of about 20 μm. The film was formed. The exposed copper portion was taken out from the vacuum deposition apparatus and concentrated copper nitric acid which was soluble in copper and insoluble in beryllium and gold was used to etch the exposed copper portion, and a beryllium thin film having a window function as shown in FIG. 10) and the remaining frame part (20a) of oxygen-free copper were made.
この一体構造体を、第４図（ａ）に示すように、口径
30mmのビームライン（102a）の真空フランジ（30）に、
フッ素ゴム製のＯリング（40）を介して前記残存枠部
（20a）を取付け、放射光透過窓とした。同図で、（104
a）は転写装置側のチャンバ、（50）はクリップであ
る。該クリップ本体の８箇所に穿設されたボルト孔（5
1）にボルト（52）を貫通せしめ、第４図（ｂ）に示す
ように、８本のボルト（52）を真空フランジ（30）のボ
ルト螺入孔（31）に螺着せしめている。As shown in Fig. 4 (a), this integral structure is
On the vacuum flange (30) of the 30 mm beam line (102a),
The remaining frame portion (20a) was attached via a fluororubber O-ring (40) to form a radiant light transmission window. In the figure, (104
a) is a chamber on the transfer device side, and (50) is a clip. Bolt holes (5
The bolt (52) is passed through 1), and as shown in FIG. 4 (b), eight bolts (52) are screwed into the bolt screw holes (31) of the vacuum flange (30).
上記の実施例では、Ｏリング（40）とベリリウム薄膜
（10）は接触状態にあるが、残存枠部（20a）の一部が
ベリリウム（10）に覆われずに露出した状態になるよう
にこれらを形成せしめれば、第５図（ａ）に示すよう
に、Ｏリング（40）とベリリウム薄膜（10）を接触させ
ないようにすることも可能であり、これにより、窓を組
立てる際にベリリウム薄膜（10）を破損する危険性が除
去されるため、さらに安定した放射光透過窓の作成が可
能となる。さらに、５図（ｂ）に示すように、ナイフエ
ッジ（32）を有するフランジ（30a）（50a）で枠部（20
a）を締め付け、Ｏリングを用いないで作成することも
可能である。これらの図では、金ペースト（21）は示さ
れていないが、ナイフエッジ（32）で締め付ける構造を
とる場合には、締め付ける前にラッピング等で除去する
ほうが望ましい。これらの構造は、ベリリウム薄膜（1
0）と枠部（20a）が一体構造になることによってのみ実
現されるものである。In the above embodiment, the O-ring (40) and the beryllium thin film (10) are in contact with each other, but the part of the residual frame portion (20a) is exposed without being covered with the beryllium (10). If these are formed, it is possible to prevent the O-ring (40) and the beryllium thin film (10) from coming into contact with each other, as shown in FIG. Since the risk of damaging the thin film (10) is eliminated, it becomes possible to create a more stable radiation transmission window. Further, as shown in FIG. 5 (b), the frame portion (20) is formed by the flanges (30a) (50a) having the knife edges (32).
It is also possible to tighten a) without using an O-ring. Although the gold paste (21) is not shown in these figures, it is preferable to remove the gold paste (21) by wrapping or the like before tightening in the case where the structure is fastened by the knife edge (32). These structures are found in beryllium thin films (1
0) and the frame part (20a) are integrated.
このようにして作成された放射光透過窓では、ビーム
ライン（102a）側と転写装置のチャンバ（104a）側に大
きな圧力差が存在し、これに伴う応力がベリリウム薄膜
（10）に働いても、不動状態が実現されているため、薄
膜（10）の取付けられた残存枠部（20a）面上でのずれ
は、該薄膜（10）が破壊される程の大きな応力が作用し
ない限り発生せず、ビームライン（102a）の高真空状態
は保持される。In the radiant light transmission window thus created, there is a large pressure difference between the beam line (102a) side and the chamber (104a) side of the transfer device, and even if the resulting stress acts on the beryllium thin film (10). Since the immovable state is realized, the displacement of the thin film (10) on the surface of the remaining frame portion (20a) to which the thin film (10) is attached should not occur unless a large stress that destroys the thin film (10) acts. The high vacuum state of the beam line (102a) is maintained.
本実施例では、基板材料として無酸素銅、エッチング
溶液として濃硝酸を使用して説明したが、本発明の主旨
は、薄膜とこれを取付けた残存枠部の一体構造体を基本
構成要件として用いることにあり、それに使用される材
料がこれらに限定されるというものではない。また、ベ
リリウム薄膜の製膜法も、真空蒸着法に限定されるもの
ではなく、基板との付着力を向上させるため、イオンプ
レーティング等の方法を用いることも可能である。In this embodiment, oxygen-free copper is used as the substrate material, and concentrated nitric acid is used as the etching solution. However, the gist of the present invention is to use an integral structure of the thin film and the residual frame part to which the thin film is attached as a basic constituent element. In particular, the material used for it is not limited to these. Further, the method for forming the beryllium thin film is not limited to the vacuum vapor deposition method, and a method such as ion plating may be used to improve the adhesion with the substrate.
以上詳述したように、本発明の放射光透過薄膜の製造
方法によれば、放射光源側の高真空と転写装置側の雰囲
気との間を隔て、且つ放射光を透過せしめる機能を持っ
た放射光透過薄膜の周辺取付け部を不動構造とすること
ができる。又、第２発明は周辺取付け部が不動構造とな
った放射光透過薄膜をビームラインに取付けているた
め、該取付け部での隙間の発生がなく、従って、窓破損
に伴うガス漏れが著しく低減され、強い軟Ｘ線を用いつ
つ、安定したＸ線リソグラフィを可能ならしめるという
効果を示す。As described above in detail, according to the method for manufacturing a radiant light transmissive thin film of the present invention, the radiation having the function of transmitting the radiant light while separating the high vacuum on the radiant light source side and the atmosphere on the transfer device side. The peripheral mounting portion of the light-transmitting thin film can have a stationary structure. Further, in the second aspect of the invention, since the radiant light transmitting thin film whose peripheral mounting portion has a stationary structure is mounted on the beam line, no gap is generated at the mounting portion, and therefore gas leakage due to window damage is significantly reduced. Therefore, it is possible to achieve stable X-ray lithography while using strong soft X-rays.
第１図（ａ）（ｂ）は本発明の構成を示す説明図、第２
図はそれを取付けた第２発明に係る放射光透過窓の一例
を示す断面図、第３図（ａ）（ｂ）（ｃ）は本発明の一
実施例に係るベリリウム薄膜と残存枠部の形成方法を示
す説明図、第４図（ａ）は第２発明の実施例の構成を示
す断面図、同図（ｂ）は該実施例の窓右側面図、第５図
（ａ）（ｂ）は第２発明の他の実施例を示す断面図、第
６図はシンクロトロン放射光を利用したＸ線露光装置の
構成の概略図、第７図は放射光透過窓の従来構造を示す
断面図である。 図中、（１）（10）はベリリウム薄膜、（２）（20）は
基板、（2a）（20a）は残存枠部、（３）（30）（30a）
はフランジ、（４）（40）はＯリング、（５）（50）
（50a）はクリップ、（102）（102a）はビームライン、
（103）は真空フランジ、（104）は止めフランジ、（11
0）は転写装置、（111）はチャンバをそれぞれ示す。1 (a) and 1 (b) are explanatory views showing the constitution of the present invention, and FIG.
The figure is a cross-sectional view showing an example of the radiant light transmitting window according to the second aspect of the present invention, and FIGS. 3 (a), (b) and (c) show the beryllium thin film and the remaining frame portion according to the example of the present invention. FIG. 4 (a) is a sectional view showing the construction of an embodiment of the second invention, FIG. 4 (b) is a right side view of the window of the embodiment, and FIGS. 5 (a) and 5 (b). ) Is a cross-sectional view showing another embodiment of the second invention, FIG. 6 is a schematic view of the configuration of an X-ray exposure apparatus using synchrotron radiation, and FIG. 7 is a cross-section showing a conventional structure of a radiation transmission window. It is a figure. In the figure, (1) and (10) are beryllium thin films, (2) and (20) are substrates, (2a) and (20a) are remaining frame parts, and (3) (30) (30a).
Is a flange, (4) (40) is an O-ring, (5) (50)
(50a) is a clip, (102) (102a) is a beam line,
(103) is a vacuum flange, (104) is a stop flange, (11
0) shows a transfer device, and (111) shows a chamber.
Claims (4)
成長せしめた後に、その反対側から、周辺の枠部を残し
つつそれ以外の基板部分を除去し、ベリリウム薄膜露出
部及び残存枠部よりなる一体構造体とし、前記残存枠部
をベリリウム薄膜取付け部材とすることを特徴とする放
射光透過薄膜の製造方法。1. After growing a beryllium thin film on a substrate made of a metal, the other side of the substrate is removed from the opposite side while leaving the peripheral frame part, and the beryllium thin film exposed part and the remaining frame part are removed. And a beryllium thin film attachment member for the remaining frame portion.
許請求の範囲第１項記載の放射光透過薄膜の製造方法。2. The method for producing a radiant light transmitting thin film according to claim 1, wherein the substrate is oxygen free copper.
せしめたことを特徴とする特許請求の範囲第１項乃至第
２項記載の放射光透過薄膜の製造方法。3. The method for producing a radiant light transmitting thin film according to claim 1, wherein the beryllium thin film is grown by a vacuum deposition method.
インから外部の雰囲気中に取り出す放射光透過窓におい
て、特許請求の範囲第１項乃至第３項記載の製造方法に
より一体構造体として製造された放射光透過薄膜を、そ
の残存枠部をビームラインの真空フランジに圧着せしめ
てそこに取付けたことを特徴とする放射光透過窓。4. A synchrotron radiation transmission window for extracting synchrotron radiation from a high-vacuum beam line into an external atmosphere, and is manufactured as an integral structure by the manufacturing method according to any one of claims 1 to 3. A radiant light transmitting window characterized in that the radiant light transmitting thin film is attached to the vacuum flange of the beam line by crimping the remaining frame portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265079A JPH0830760B2 (en) | 1989-10-13 | 1989-10-13 | Method for manufacturing radiant light transmitting thin film and radiant light transmitting window having radiant light transmitting thin film manufactured by the method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1265079A JPH0830760B2 (en) | 1989-10-13 | 1989-10-13 | Method for manufacturing radiant light transmitting thin film and radiant light transmitting window having radiant light transmitting thin film manufactured by the method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03128499A JPH03128499A (en) | 1991-05-31 |
| JPH0830760B2 true JPH0830760B2 (en) | 1996-03-27 |
Family
ID=17412308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1265079A Expired - Lifetime JPH0830760B2 (en) | 1989-10-13 | 1989-10-13 | Method for manufacturing radiant light transmitting thin film and radiant light transmitting window having radiant light transmitting thin film manufactured by the method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0830760B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3022014B2 (en) * | 1992-01-17 | 2000-03-15 | 三菱電機株式会社 | Light transmission type vacuum separation window and soft X-ray transmission window |
| JP2001307669A (en) * | 2000-04-21 | 2001-11-02 | Shimadzu Corp | Soft X-ray generator and X-ray inspection device |
| JP2007253083A (en) * | 2006-03-23 | 2007-10-04 | Ebara Corp | Agitating aerator and sewage treatment plant |
| JP2011033396A (en) * | 2009-07-30 | 2011-02-17 | Hamamatsu Photonics Kk | Window structure, electron beam emission device, and x-ray emission device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0353200A (en) * | 1989-07-20 | 1991-03-07 | Fujitsu Ltd | Production of x-ray exposing device |
-
1989
- 1989-10-13 JP JP1265079A patent/JPH0830760B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03128499A (en) | 1991-05-31 |
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