JPH0831417B2 - Plasma processing deposition equipment - Google Patents
Plasma processing deposition equipmentInfo
- Publication number
- JPH0831417B2 JPH0831417B2 JP63304187A JP30418788A JPH0831417B2 JP H0831417 B2 JPH0831417 B2 JP H0831417B2 JP 63304187 A JP63304187 A JP 63304187A JP 30418788 A JP30418788 A JP 30418788A JP H0831417 B2 JPH0831417 B2 JP H0831417B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- generation space
- processing
- plasma generation
- ignition means
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000008021 deposition Effects 0.000 title claims description 15
- 238000000151 deposition Methods 0.000 claims description 19
- 239000004020 conductor Substances 0.000 claims description 11
- 230000005284 excitation Effects 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 5
- 229910052805 deuterium Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- -1 and when depositing Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、プラズマを持続発生させて生ずる励起種を
利用することにより、試料の加工あるいは堆積を行う工
程に利用される。例えば、半導体デバイスの製造プロセ
スにおけるエッチング、各種薄膜の堆積、あるいはプラ
ズマ酸化などの材料の表面処理などである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is used in a step of processing or depositing a sample by utilizing an excited species generated by continuously generating plasma. For example, etching in the manufacturing process of semiconductor devices, deposition of various thin films, or surface treatment of materials such as plasma oxidation.
プラズマ加工・堆積などの処理を行う際、従来では、
プラズマを持続発生させるための励起の強度（主として
電力）を徐々に増加させ、プラズマを点火させている。
プラズマ発生手段にも依るが、一般に、プラズマ点火の
時の励起強度は、プラズマを持続発生させるために必要
な励起強度よりも大きい。この様な場合であって、か
つ、小さな励起強度でプラズマ処理を行うことが目的の
場合、一旦大きな励起強度でもってプラズマを発生さ
せ、その直後に所定の小さな励起強度に戻さなければな
らない。この様なことは、特に半導体デバイス製造プロ
セスのエッチング工程に用いられる電子サイクロトロン
共鳴（ECR）プラズマ発生装置のように、プラズマ発生
室内部に電極がなく、低真空度でプラズマを発生させる
装置にありがちなことである。Conventionally, when performing processing such as plasma processing and deposition,
Excitation intensity (mainly electric power) for continuously generating plasma is gradually increased to ignite the plasma.
Generally, the excitation intensity at the time of plasma ignition is higher than the excitation intensity required to continuously generate plasma, although it depends on the plasma generation means. In such a case, and when the purpose is to perform plasma treatment with a small excitation intensity, it is necessary to once generate plasma with a large excitation intensity and then immediately return to a predetermined small excitation intensity. This is likely to occur in an apparatus that does not have electrodes inside the plasma generation chamber and that generates plasma at a low degree of vacuum, such as an electron cyclotron resonance (ECR) plasma generation apparatus used in the etching process of a semiconductor device manufacturing process. That's right.
しかしながら、プラズマ点火時に必要な過大な励起強
度は、次のような好ましくない結果を引き起こすために
問題となっている。However, the excessive excitation intensity required during plasma ignition is a problem because it causes the following unfavorable results.
（Ａ）絶縁耐圧の小さな絶縁膜（例えば超薄絶縁膜）を
含む多層構造の試料をプラズマでエッチングする場合、
その絶縁膜が、プラズマ点火時に絶縁破壊を起こし易
い。(A) When a sample having a multi-layered structure including an insulating film having a low withstand voltage (for example, an ultrathin insulating film) is etched by plasma
The insulating film easily causes dielectric breakdown during plasma ignition.
（Ｂ）プラズマエッチングを行う場合で、エッチングの
厚みを精密に制御するためにエッチング速度を小さく抑
える場合、プラズマ点火時にエッチング速度が上昇して
しまうために、エッチングの厚みの制御が難しい。(B) In the case of performing plasma etching, if the etching rate is kept small in order to precisely control the etching thickness, it is difficult to control the etching thickness because the etching rate increases at the time of plasma ignition.
（Ｃ）プラズマで薄膜を堆積させる場合で、低密度プラ
ズマによって堆積速度を下げて良質な膜を堆積すること
が目的の場合、プラズマ点火時に堆積速度が上昇してし
まうために、膜質が低下し、不均一になる。(C) In the case of depositing a thin film by plasma, when the purpose is to reduce the deposition rate by low-density plasma to deposit a good quality film, the deposition rate increases at the time of plasma ignition, so the film quality deteriorates. , Becomes uneven.
かかる問題点を解決するために、本発明は、プラズマ
発生空間内に内部電極を有しない電子サイクロトロン共
鳴あるいは外部電極型高周波励起を利用し、プラズマ発
生空間内にプラズマをを持続発生させて加工・堆積など
の処理を行う装置において、プラズマの持続発生手段と
は別に、プラズマの点火手段を附加する。In order to solve such a problem, the present invention utilizes electron cyclotron resonance having no internal electrode in the plasma generation space or external electrode type high frequency excitation to continuously generate plasma in the plasma generation space for processing. In an apparatus for performing processing such as deposition, plasma ignition means is added in addition to plasma continuous generation means.
プラズマ点火が起こりにくい原因は、外部から励起さ
れる自由電子がプラズマ発生空間に少ないためであるの
で、これをなんらかの方式で添加したり、あるいは発生
させてやれば良い。具体的な方式として、次のようなも
のが挙げられる。The reason why plasma ignition is unlikely to occur is that there are few free electrons excited from the outside in the plasma generation space, so it may be added or generated in some way. Specific methods include the following.
（Ａ）プラズマ発生空間に連続した装置部分に、ヒータ
の役目をするタングステン・フィラメントなどの導電体
を設け、これに通電して熱電子を発生させる方式。(A) A method in which a conductor such as a tungsten filament serving as a heater is provided in a device portion continuous with the plasma generation space, and electricity is applied to the conductor to generate thermoelectrons.
（Ｂ）プラズマ発生空間の隣室などで電子銃により発生
・加速された電子線をプラズマ発生空間あるいはプラズ
マ発生空間に連続した装置部分に照射する方式。(B) A method of irradiating an electron beam generated / accelerated by an electron gun in a room next to the plasma generation space to the plasma generation space or a device portion continuous to the plasma generation space.
（Ｃ）プラズマ発生空間の外側から重水素ランプ光やエ
キシマレーザー光などの紫外線をプラズマ発生空間ある
いはプラズマ発生空間に連続した装置部分に照射し、ガ
ス分子や装置壁面などから光電子を発生させる方式。(C) A method of irradiating ultraviolet rays such as deuterium lamp light or excimer laser light to the plasma generation space or a continuous device portion in the plasma generation space from the outside of the plasma generation space to generate photoelectrons from gas molecules or the wall surface of the device.
（Ｄ）プラズマ発生空間あるいはプラズマ発生空間に連
続した装置部分に、プラズマを持続発生させる手段より
もプラズマを点火し易い放電電極を設け、これで前もっ
てプラズマを発生させて、持続発生プラズマ点火のため
の「呼び水」とする方式。(D) A plasma generation space or a device portion continuous to the plasma generation space is provided with a discharge electrode that is easier to ignite the plasma than the means for continuously generating the plasma, so that the plasma is generated in advance to ignite the continuously generated plasma. The method of "priming".
プラズマ発生空間内にプラズマ維持用電極を有する装
置においては、熱電子放出用フィラメントのようなプラ
ズマ点火手段を用いてプラズマ放電を促進することが知
られている（例えば特公昭55−27625参照）。In an apparatus having a plasma sustaining electrode in the plasma generation space, it is known to promote plasma discharge by using plasma ignition means such as a thermionic emission filament (see, for example, Japanese Patent Publication No. 55-27625).
これに対して電子サイクロトロン共鳴（ECR）あるい
は外部電極型の高周波励起（RF）などを利用したプラズ
マ装置においては、プラズマ発生空間には特に内部電極
が存在しない。On the other hand, in a plasma apparatus using electron cyclotron resonance (ECR) or external electrode type high frequency excitation (RF), there is no internal electrode in the plasma generation space.
このようなプラズマ装置において、熱電子放出用フィ
ラメントのようなプラズマ点火手段を用いると、プラズ
マ点火に必要な励起強度を著しく低減できることが見出
された。本発明はこのような知見に基づいてなされたも
のである。It has been found that in such a plasma device, the use of a plasma ignition means such as a thermionic emission filament can significantly reduce the excitation intensity required for plasma ignition. The present invention has been made based on such findings.
本発明により、持続発生プラズマ点火が容易となり、
前記の好ましくない結果が起こるのを抑えることができ
る。The present invention facilitates sustained plasma ignition,
It is possible to prevent the above-mentioned undesirable results from occurring.
まず始めに、内部電極によらずにプラズマを持続発生
させて加工・堆積などの処理を行う装置として、ECRプ
ラズマガス反応装置（以下、「ECR装置」）を取り上
げ、これに本発明を適用した例を挙げる（第１図）。First, an ECR plasma gas reactor (hereinafter referred to as “ECR device”) was taken up as an apparatus for performing processing such as processing and deposition by continuously generating plasma without using internal electrodes, and the present invention was applied to it. Take an example (Fig. 1).
まず、ECR装置について簡単に説明する。真空である
プラズマ発生空間５の上方から、プラズマによって励起
種を生成するようなガスがガス導入管２より導入され
る。マイクロ波によって電場、マグネットコイル３によ
って磁場を適度に加え、電子にサイクロトロン共鳴を起
こさせ、ガスをプラズマ化する。このプラズマを下方に
設置した試料７に照射することによって、試料７に加工
あるいは堆積を行う。例えば、試料７をエッチングする
時は、ガスに６弗化硫黄（SF6）を使い、堆積を行う時
は、水素（H2）とモノシラン（SiH4）を使う。First, the ECR device will be briefly described. From above the plasma generation space 5, which is a vacuum, a gas that generates excited species by plasma is introduced from the gas introduction pipe 2. An electric field is appropriately applied by the microwaves and a magnetic field is appropriately applied by the magnet coil 3 to cause cyclotron resonance in the electrons and turn the gas into plasma. By irradiating the sample 7 placed below with this plasma, the sample 7 is processed or deposited. For example, when etching the sample 7, sulfur hexafluoride (SF 6 ) is used as a gas, and when depositing, hydrogen (H 2 ) and monosilane (SiH 4 ) are used.
この様なECR装置に本発明を附加した部分が、第１図
ではタングステン製などのフィラメント10と直流電源11
である。これらがそれぞれ請求項２に記載された導電体
と外部電源に相当する。In Fig. 1, the part to which the present invention is added to such an ECR device is a filament 10 made of tungsten and a DC power supply 11
Is. These correspond to the conductor and the external power source described in claim 2, respectively.
このプラズマ点火手段を利用してプラズマを発生させ
る手順を述べる。あらかじめ試料７を導入し、前記のガ
スを導入し、前記のマグネットコイル３で所定の磁場を
発生させておく。次にフィラメント10に通電して赤熱
し、フィラメント10から熱電子を発生させる。この様な
状態でマイクロ波電力を零から徐々に増加していくと、
フィラメント10を赤熱しない場合よりも低いマイクロ波
電力でプラズマが点火する。所定のマイクロ波電力に調
整した後、フィラメント10の通電を止め、プラズマ点火
時に閉じてあった回転式シャッタ６（もし装備していれ
ば）を開け、エッチングまたは堆積を始める。尚、１は
導波管、４は真空容器、12は絶縁材である。A procedure for generating plasma using this plasma ignition means will be described. The sample 7 is introduced in advance, the gas is introduced, and a predetermined magnetic field is generated by the magnet coil 3. Next, the filament 10 is energized to generate red heat, and thermions are generated from the filament 10. When the microwave power is gradually increased from zero in such a state,
The plasma ignites at a lower microwave power than if filament 10 did not glow red. After adjusting to a predetermined microwave power, the energization of the filament 10 is stopped, the rotary shutter 6 (if equipped) that was closed at the time of plasma ignition is opened, and etching or deposition is started. In addition, 1 is a waveguide, 4 is a vacuum container, and 12 is an insulating material.
第２図では、フィラメント10がプラズマ発生空間５よ
りも離れた位置にあるが、前述の様なプラズマ点火の作
用がある。この様に離すのは、フィラメント10がエッチ
ングされたり、フィラメント10に堆積したりすることに
よって、試料７が汚染されるのを防ぐためである。In FIG. 2, the filament 10 is located farther from the plasma generation space 5, but it has the above-described plasma ignition action. The separation is performed to prevent the sample 7 from being contaminated by the filament 10 being etched or deposited on the filament 10.
第３図は電子銃30をECR装置に取り付けたものであ
る。前述のフィラメント10で発生させた熱電子の代わり
に、電子銃30で加速された電子をプラズマ点火機構とし
て用いる。電子銃30が請求項３に記載れた電子線を照射
する機構に相当する。FIG. 3 shows the electron gun 30 attached to an ECR device. Instead of the thermoelectrons generated by the filament 10 described above, the electrons accelerated by the electron gun 30 are used as a plasma ignition mechanism. The electron gun 30 corresponds to the electron beam irradiation mechanism described in claim 3.
第４図はECR装置に紫外線が透過できる紫外線透過窓4
1を設け、外部に重水素ランプ40を設置したものであ
る。重水素ランプ40から発せられる紫外線をプラズマ点
火機構として用いる。ガスに紫外線を照射して発生する
光電子の個数が少なく、効果が低い時、紫外線の光路に
光電効果の高い光電子発生板42を置く。重水素ランプ40
が請求項４に記載された紫外線を照射する機構に相当す
る。Fig. 4 shows an ultraviolet ray transmission window 4 that allows ultraviolet rays to pass through the ECR device.
1 is provided and a deuterium lamp 40 is installed outside. Ultraviolet rays emitted from the deuterium lamp 40 are used as a plasma ignition mechanism. When the number of photoelectrons generated by irradiating the gas with ultraviolet rays is small and the effect is low, a photoelectron generating plate 42 having a high photoelectric effect is placed in the optical path of the ultraviolet rays. Deuterium lamp 40
Corresponds to the mechanism for irradiating ultraviolet rays described in claim 4.
第５図は、ECR装置のプラズマ発生空間５に連続した
装置部分に、プラズマを持続発生させる手段よりもプラ
ズマを点火し易い放電電極50（片方の電極に電界の集中
が起こるようになっている）と、これに接続された高周
波電源51を取り付けたものである。これらはそれぞれ請
求項５に記載された放電電極と放電用外部電源に相当す
る。これらで前もってプラズマを発生させて、持続発生
プラズマの点火を促す。放電電極50がプラズマ発生空間
５から離してあるのは、放電電極50による試料７の汚染
を防ぐためである。尚、52は絶縁材である。FIG. 5 shows a discharge electrode 50 (one of which has a concentration of an electric field) which is easier to ignite plasma than a means for continuously generating plasma in a device portion continuous with the plasma generation space 5 of the ECR device. ) And a high-frequency power source 51 connected thereto. These correspond to the discharge electrode and the external power source for discharge described in claim 5, respectively. These generate a plasma in advance to promote ignition of the continuously generated plasma. The reason why the discharge electrode 50 is separated from the plasma generation space 5 is to prevent the sample 7 from being contaminated by the discharge electrode 50. Incidentally, 52 is an insulating material.
さて次に、内部電極なしでプラズマを持続発生させて
加工・堆積などの処理を行う装置として、外部電極によ
る高周波放電装置を取り上げ、これに本発明を適用した
例を挙げる。（第６図）。Next, a high-frequency discharge device with external electrodes will be taken up as an apparatus for performing processing such as processing and deposition by continuously generating plasma without internal electrodes, and an example in which the present invention is applied to this will be given. (Fig. 6).
この装置は、石英などの誘電体で形成された導電体容
器60の内側に試料７が設置され、ガスが導入されるよう
になっている。導電体容器60の外側は放電用の電極62、
63でおおわれている。第６図の場合は電極が容量性の場
合で、ここに高周波を印加すると、導電体容器60の内側
に持続発生プラズマが起こり、試料７にエッチングない
しは堆積が施される。尚、61は高周波電源である。In this apparatus, the sample 7 is placed inside a conductor container 60 made of a dielectric material such as quartz, and gas is introduced. The outside of the electric conductor container 60 is an electrode 62 for discharge,
Covered with 63. In the case of FIG. 6, the electrodes are capacitive, and when a high frequency is applied to them, continuously generated plasma occurs inside the conductor container 60, and the sample 7 is etched or deposited. In addition, 61 is a high frequency power supply.
この様な放電装置に本発明を附加した部分が、第６図
中のフィラメント10と、これに通電するための直流電源
11である。これらがそれぞれ請求項２に記載された導電
体と外部電源に相当する。プラズマを発生させる手順
は、前述のECR装置の場合とほとんど同じで、まず、あ
らかじめ試料７とガスを導入した後、フィラメント10に
通電して赤熱し、フィラメント10から熱電子を発生させ
る。この状態で高周波の強度を零から徐々に増加してい
くと、フィラメント10を赤熱しない場合よりも低い高周
波電力でプラズマが点火され、エッチングまたは堆積が
始まる。The portion of the discharge device to which the present invention is added is a filament 10 shown in FIG. 6 and a DC power source for energizing the filament.
Eleven. These correspond to the conductor and the external power source described in claim 2, respectively. The procedure for generating plasma is almost the same as in the case of the ECR apparatus described above. First, after the sample 7 and gas are introduced in advance, the filament 10 is energized to cause red heat and the filament 10 generates thermoelectrons. When the intensity of the high frequency is gradually increased from zero in this state, the plasma is ignited at a high frequency power lower than that in the case where the filament 10 is not red-heated, and etching or deposition starts.
ECR装置の場合と同様に、プラズマ点火手段として電
子銃、紫外線光源、点火用プラズマ発生電極などもフィ
ラメント10と直流電源11の代わりに用いることができ
る。Similar to the case of the ECR device, an electron gun, an ultraviolet light source, an ignition plasma generating electrode, etc. can be used as the plasma ignition means instead of the filament 10 and the DC power supply 11.
第７図は、第２図の装置で本発明の効果を示す実験結
果である。フィラメントと赤熱しないでプラズマを点火
した場合（Ａ）と、赤熱してプラズマを点火した場合
（Ｂ）を交互に行って、プラズマ点火時のマイクロ波電
力を調べたものである。Ａの場合に比べてＢの場合の方
が小さなマイクロ波電力でプラズマが点火しており、本
発明が効果的に作用していることが示されている。FIG. 7 is an experimental result showing the effect of the present invention with the apparatus of FIG. The microwave power at the time of plasma ignition was examined by alternately performing the case of igniting plasma without red heat with the filament (A) and the case of igniting plasma with red heat (B). The plasma is ignited with a smaller microwave power in the case B than in the case A, which shows that the present invention works effectively.
第１図はECR装置に本発明の請求項２に記載された導電
体と外部電源を附加した装置の断面図、第２図もECR装
置に本発明の請求項２に記載された導電体と外部電源を
附加した装置の断面図であり、第３図はECR装置に本発
明の請求項３に記載された電子線を照射する機構を附加
した装置の断面図、第４図はECR装置に本発明の請求項
４に記載された紫外線を照射する機構を附加した装置の
断面図、第５図はECR装置に本発明の請求項５に記載さ
れた放電電極と放電用外部電源を附加した装置の断面
図、第６図は外部電極による高周波放電装置に本発明の
請求項２に記載された導電体と外部電源を附加した装置
の断面図であり、第７図は本発明の効果を示す実験結果
のグラフである。 １……導波管、２……ガス導入管、３……マグネットコ
イル、４……真空容器、５……プラズマ発生空間、６…
…回転式シャッタ、７……試料、10……フィラメント、
11……直流電源、12……絶縁材、30……電子銃、40……
重水素ランプ、41……紫外線透過窓、42……光電子発生
板、50……放電電極、51……高周波電源、52……絶縁
材、60……誘電体容器、61……高周波電源、62、63……
放電用電極。FIG. 1 is a cross-sectional view of an ECR device in which a conductor according to claim 2 of the present invention and an external power source are added, and FIG. 2 also shows an ECR device with a conductor according to claim 2 of the present invention. FIG. 3 is a cross-sectional view of an apparatus to which an external power source is added, FIG. 3 is a cross-sectional view of the apparatus to which the mechanism for irradiating an electron beam described in claim 3 of the present invention is added to the ECR apparatus, and FIG. FIG. 5 is a cross-sectional view of an apparatus to which the mechanism for irradiating ultraviolet rays according to claim 4 of the present invention is added, and FIG. 5 is an ECR apparatus to which the discharge electrode according to claim 5 of the present invention and an external power source for discharge are added. FIG. 6 is a cross-sectional view of the device, FIG. 6 is a cross-sectional view of the device in which the conductor and the external power source described in claim 2 of the present invention are added to the high-frequency discharge device with external electrodes, and FIG. 7 shows the effect of the present invention. It is a graph of the experimental result shown. 1 ... Waveguide, 2 ... Gas introduction tube, 3 ... Magnet coil, 4 ... Vacuum container, 5 ... Plasma generation space, 6 ...
… Rotary shutter, 7 …… Sample, 10 …… Filament,
11 …… DC power supply, 12 …… insulation material, 30 …… electron gun, 40 ……
Deuterium lamp, 41 ... UV transparent window, 42 ... Photoelectron generating plate, 50 ... Discharge electrode, 51 ... High frequency power source, 52 ... Insulating material, 60 ... Dielectric container, 61 ... High frequency power source, 62 , 63 ……
Discharge electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 石井 賢一 茨城県つくば市梅園１丁目１番４ 工業技 術院電子技術総合研究所内 (72)発明者 木下 英太 埼玉県所沢市大字下富字武野840 シチズ ン時計株式会社技術研究所内 (72)発明者 佐々木 正巳 東京都府中市四谷５丁目８番１号 日電ア ネルバ株式会社内 審査官 山本 一正 (56)参考文献 特開 昭49−75093（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenichi Ishii, 1 1-4 Umezono, Tsukuba-shi, Ibaraki Electronic Technology Research Institute, Industrial Technology Institute (72) Inventor, Eita Kinoshita, Tokorozawa, Saitama Prefecture 840 CITIZEN WATCH CO., LTD. Technical Research Laboratory (72) Inventor Masami Sasaki 5-8-1, Yotsuya, Fuchu-shi, Tokyo Kazumasa Yamamoto (56) Reference Examiner, Nielden Anelva Co., Ltd. (56) Reference JP-A-49-75093 ( JP, A)
Claims (5)
電子サイクロトロン共鳴あるいは外部電極型高周波励起
を利用し、プラズマ発生空間内にプラズマを持続発生さ
せて試料の加工あるいは堆積を行う装置において、 プラズマの持続発生手段とは別に、プラズマの点火手段
を有することを特徴とするプラズマ加工堆積装置。1. A device for processing or depositing a sample by continuously generating plasma in the plasma generation space by utilizing electron cyclotron resonance having no internal electrode in the plasma generation space or high frequency excitation of the external electrode type, A plasma processing and depositing apparatus, characterized in that it has plasma ignition means in addition to the continuous generation means.
連続した装置部分に設けられた導電体と、それに電流を
流すために接続された外部電源であることを特徴とする
請求項１記載のプラズマ加工堆積装置。2. The plasma according to claim 1, wherein the plasma ignition means is a conductor provided in a device portion connected to the plasma generation space, and an external power source connected to flow a current therethrough. Processing and deposition equipment.
るいはプラズマ発生空間に連続した装置部分に電子線を
照射する機構であることを特徴とする請求項１記載のプ
ラズマ加工堆積装置。3. The plasma processing / deposition apparatus according to claim 1, wherein the plasma ignition means is a mechanism for irradiating the plasma generation space or an apparatus portion continuous with the plasma generation space with an electron beam.
るいはプラズマ発生空間に連続した装置部分に紫外線を
照射する機構であることを特徴とする請求項１記載のプ
ラズマ加工堆積装置。4. The plasma processing / deposition apparatus according to claim 1, wherein the plasma ignition means is a mechanism for irradiating the plasma generation space or an apparatus portion continuous to the plasma generation space with ultraviolet rays.
とは異なる別のプラズマを発生させる目的で、プラズマ
発生空間に連続した装置部分に設けられた放電電極と、
それに接続された放電用外部電源であることを特徴とす
る請求項１記載のプラズマ加工堆積装置。5. A discharge electrode provided in a device portion continuous with a plasma generation space, for the purpose of generating another plasma different from the plasma of claim 1, by a plasma ignition means,
The plasma processing / deposition apparatus according to claim 1, wherein the plasma processing / deposition apparatus is an external power supply for discharge connected thereto.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304187A JPH0831417B2 (en) | 1988-12-02 | 1988-12-02 | Plasma processing deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63304187A JPH0831417B2 (en) | 1988-12-02 | 1988-12-02 | Plasma processing deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02151021A JPH02151021A (en) | 1990-06-11 |
| JPH0831417B2 true JPH0831417B2 (en) | 1996-03-27 |
Family
ID=17930079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63304187A Expired - Lifetime JPH0831417B2 (en) | 1988-12-02 | 1988-12-02 | Plasma processing deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831417B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9414561D0 (en) * | 1994-07-19 | 1994-09-07 | Ea Tech Ltd | Method of and apparatus for microwave-plasma production |
| JP4799748B2 (en) | 2001-03-28 | 2011-10-26 | 忠弘 大見 | Microwave plasma process apparatus, plasma ignition method, plasma formation method, and plasma process method |
| JP2008270013A (en) * | 2007-04-23 | 2008-11-06 | Nippon Telegr & Teleph Corp <Ntt> | Plasma processing equipment |
| JP5108367B2 (en) * | 2007-04-27 | 2012-12-26 | ギガフォトン株式会社 | Extreme ultraviolet light source device |
| JP6124477B2 (en) * | 2013-03-22 | 2017-05-10 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing apparatus, and recording medium |
| KR101718515B1 (en) * | 2014-10-27 | 2017-03-22 | 최도현 | Fire chamber, plasma generator, plasma generating method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3781712A (en) * | 1972-10-17 | 1973-12-25 | Hughes Aircraft Co | Gas laser with discharge conditioning using ultraviolet photons generated in high current density preliminary discharge |
| JPS5221332U (en) * | 1975-08-01 | 1977-02-15 | ||
| JPS5924132U (en) * | 1982-08-09 | 1984-02-15 | 株式会社東芝 | Microwave plasma processing equipment |
| JPS59226027A (en) * | 1983-06-07 | 1984-12-19 | Toyota Motor Corp | Plasma treatment |
| JPS62195124A (en) * | 1986-02-21 | 1987-08-27 | Anelva Corp | Ecr plasma device |
-
1988
- 1988-12-02 JP JP63304187A patent/JPH0831417B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02151021A (en) | 1990-06-11 |
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