JPH0831612B2 - Photovoltaic device manufacturing method - Google Patents
Photovoltaic device manufacturing methodInfo
- Publication number
- JPH0831612B2 JPH0831612B2 JP62119903A JP11990387A JPH0831612B2 JP H0831612 B2 JPH0831612 B2 JP H0831612B2 JP 62119903 A JP62119903 A JP 62119903A JP 11990387 A JP11990387 A JP 11990387A JP H0831612 B2 JPH0831612 B2 JP H0831612B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- photoelectric conversion
- paste
- semiconductor film
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は太陽光発電等に利用される光起電力装置の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for manufacturing a photovoltaic device used for photovoltaic power generation or the like.
（ロ） 従来の技術 第１電極、半導体膜及び第２電極の積層体部分からな
る複数の光電変換素子をガラス等の基板の一主面に形成
し、それら光電変換素子を互いに電気的に直列接続せし
めた光起電力装置は、例えば米国特許第4,281,208号に
開示されていると共に、本願出願人により既に実用化さ
れている。更に、本願出願人は上記米国特許に開示され
た平板状の基板に代って、曲面表面を持つ和瓦状の基板
に上記光電変換素子を形成し、従来の屋根材としての和
瓦と互換性のある光起電力装置の開発も行ない、特願昭
58-139546号（特開昭60-31259号公報参照）として出願
している。(B) Conventional Technology A plurality of photoelectric conversion elements each including a laminated body portion of a first electrode, a semiconductor film, and a second electrode are formed on one main surface of a substrate such as glass, and the photoelectric conversion elements are electrically connected in series. The connected photovoltaic device is disclosed, for example, in U.S. Pat. No. 4,281,208 and has already been put into practical use by the applicant of the present application. Further, the applicant of the present application formed the photoelectric conversion element on a Japanese tile-shaped substrate having a curved surface instead of the flat substrate disclosed in the above-mentioned US patent, and was compatible with Japanese tiles as a conventional roofing material. Development of a photovoltaic device with good properties,
Japanese Patent Application No. 58-139546 (see Japanese Patent Laid-Open No. 60-31259).
このような光起電力装置の製造における各光電変換素
子毎のパターニングは、ウエットプロセスを含むフォト
リソグラフィ手法からドライプロセスによるフォトリソ
グラフィ手法へ移行し、更には光起電力装置の大面積化
要求に対応すべくレーザビーム、電子ビーム、イオンビ
ーム等のエネルギビームを使用した手法へと移りつつあ
る。Patterning for each photoelectric conversion element in the manufacture of such a photovoltaic device shifts from a photolithography method including a wet process to a photolithography method by a dry process, and further responds to a demand for a large area of the photovoltaic device. In order to do so, methods using energy beams such as laser beams, electron beams, and ion beams are being moved to.
斯るエネルギビームを使用したパターニングにおいて
留意すべきは、当該加工は本質的に熱加工であり、加工
せんとする膜部分の下に他の膜が存在しておれば、それ
に損傷を与えないことである。さもなければ、目的の膜
部分を焼き切った上、必要としない下の膜までも焼き切
ってしまったり、或いは焼き切らないまでも熱的なダメ
ージを与えてしまう。It should be noted in patterning using such an energy beam that the process is essentially a thermal process and does not damage other films existing under the film portion to be processed. Is. Otherwise, the target film portion is burnt out, and even the lower film that is not needed is burnt out, or thermal damage is caused even if it is not burnt out.
特開昭62-33477号公報に開示された先行技術は、上記
エネルギビームの照射による膜の分離部分に、斯るエネ
ルギビームの照射による分離に先立ってエネルギビーム
の下層に位置する他の膜への到達を阻止する絶縁ペース
トからなる絶縁部分を配置することを提案している。斯
る絶縁ペーストからなる絶縁部材はエネルギビームを使
用したパターニングにおける下層の損傷に対して極めて
有効である。The prior art disclosed in Japanese Unexamined Patent Publication No. 62-33477 discloses that a film separated by irradiation with the energy beam is transferred to another film located under the energy beam prior to the separation by irradiation with the energy beam. It is proposed to dispose an insulating part made of an insulating paste that prevents the arrival of the insulating paste. An insulating member made of such an insulating paste is extremely effective against damage to a lower layer in patterning using an energy beam.
然し乍ら、このように絶縁ペーストからなる絶縁部材
はエネルギビームを使用したパターニングに極めて有効
であるにも拘らず、当該絶縁部材は印刷手法によりパタ
ーニングされるために基板が上記特開昭62-33477号公報
のように平坦面でなければならず、和瓦の如き曲面を持
った基板に絶縁部材を印刷することはできない。However, although the insulating member made of the insulating paste is extremely effective for patterning using an energy beam, the insulating member is patterned by a printing method, so that the substrate is the above-mentioned JP-A-62-33477. It must be a flat surface as in the publication, and an insulating member cannot be printed on a substrate having a curved surface such as a Japanese roof tile.
（ハ） 発明が解決しようとする問題点 本発明は上述の如く和瓦の如き曲面を持った基板を使
用した光起電力装置の製造方法に、エネルギビームを使
用したパターニングに極めて有効な絶縁ペーストからな
る絶縁部材を用いることができない点を解決しようとす
るものである。(C) Problems to be Solved by the Invention The present invention is an insulating paste extremely effective for patterning using an energy beam in a method for manufacturing a photovoltaic device using a substrate having a curved surface such as a Japanese roof tile as described above. The present invention is intended to solve the problem that the insulating member made of is not usable.
（ニ） 問題点を解決するための手段 本発明光起電力装置の製造方法は上記問題点を解決す
るために、曲面を有する基板の複数の光電変換部分に跨
って被着される半導体膜を、各個別の光電変換素子毎に
エネルギビームの照射により分離するに先立って、上記
エネルギビームの照射により分離される分離部分に、エ
ネルギビームの下層に位置する第１電極への到達を阻止
する絶縁ペーストからなる絶縁部材を配置すべく、上記
ペーストを一旦平坦なフレキシブル部材に印刷し、その
後当該ペーストをフレキシブル部材の柔軟性を利用して
上記第１電極上における上記半導体膜の分離予定箇所に
転写したことを特徴とする。(D) Means for Solving the Problems In order to solve the above problems, a method for manufacturing a photovoltaic device according to the present invention includes a semiconductor film deposited over a plurality of photoelectric conversion portions of a substrate having a curved surface. Insulation that blocks the separation portion separated by the irradiation of the energy beam from reaching the first electrode located in the lower layer of the energy beam before separating the individual photoelectric conversion elements by the irradiation of the energy beam. In order to arrange an insulating member made of a paste, the paste is once printed on a flat flexible member, and then the paste is transferred to a predetermined separation portion of the semiconductor film on the first electrode by utilizing the flexibility of the flexible member. It is characterized by having done.
（ホ） 作用 上述の如く絶縁ペーストを一旦平坦なフレキシブル部
材に印刷し、その後当該ペーストをフレキシブル部材の
柔軟性を利用して第１電極上における半導体膜の分離予
定箇所に転写することによって、上記絶縁ペーストから
なる絶縁部材は、半導体膜を各個別の光電変換素子毎に
分離すべく照射されるエネルギビームが下層に位置する
第１電極に到達するのを阻止する。(E) Action As described above, the insulating paste is once printed on the flat flexible member, and then the paste is transferred to the planned separation portion of the semiconductor film on the first electrode by utilizing the flexibility of the flexible member. The insulating member made of an insulating paste blocks the energy beam irradiated to separate the semiconductor film into individual photoelectric conversion elements from reaching the first electrode located in the lower layer.
（ヘ） 実施例 以下第１図に示された和瓦状光起電力装置の製造に、
本発明光起電力装置の製造方法を適用した実施例につき
第２図乃至第８図を参照して工程順に詳述する。(F) Example For manufacturing the Japanese tile-shaped photovoltaic device shown in FIG. 1 below,
An embodiment to which the method for manufacturing a photovoltaic device of the present invention is applied will be described in detail in the order of steps with reference to FIGS. 2 to 8.
和瓦状光起電力装置は、和瓦状の曲面を持つガラス製
の透光性基板（１）に、第２図乃至第８図の工程を経て
形成された第１電極としての透明電極膜（2a）（2b）
（2c）…、膜面にほぼ平行なpin接合等の半導体接合を
含む半導体膜（5a）（5b）（5c）…、及び第２電極とし
ての裏面電極膜（6a）（6b）（6c）…の積層体部分から
なる複数（本実施例では６素子）の短冊状光電変換素子
（7a）〜（7f）が稜線に対し垂直に交差する方向に並置
され、斯る光電変換素子（7a）〜（7f）は互いに相い隣
り合う隣接間隔部において電気的に直列接続されてい
る。The Japanese tile-like photovoltaic device is a transparent electrode film as a first electrode formed on a transparent substrate (1) made of glass having a Japanese tile-like curved surface through the steps of FIG. 2 to FIG. (2a) (2b)
(2c) ..., semiconductor films (5a) (5b) (5c) including semiconductor junctions such as pin junctions substantially parallel to the film surface, and back electrode films (6a) (6b) (6c) as second electrodes A plurality (six elements in this example) of strip-shaped photoelectric conversion elements (7a) to (7f) each including the laminated body portion are arranged side by side in a direction perpendicular to the ridge line, and such photoelectric conversion element (7a) .. (7f) are electrically connected in series at the mutually adjacent adjacent spaces.
第２図及び第４図乃至第８図は第１図に於けるＸ−
Ｘ′線断面を示しており、基板（１）が曲面であると雖
も斯る断面は平坦面となっている。2 and 4 to 8 show X- in FIG.
A cross section taken along line X'is shown, and when the substrate (1) is a curved surface, the cross section is also a flat surface.
第２図の工程では、ITO、SnO2に代表される透光性導
電酸化物（TCO）の単層型或いはそれらの積層型の透明
電極膜が被着された後、隣接間隔部（ab）（bc）がレー
ザビーム（LB）の照射により除去されて、個別の各透明
電極膜（2a）（2b）（2c）…が分離形成される。In the process shown in FIG. 2 , after a transparent electrode film of a single layer type of translucent conductive oxide (TCO) typified by ITO or SnO 2 or a laminated type of those is deposited, an adjacent gap part (ab) is formed. (Bc) is removed by irradiation with a laser beam (LB), and individual transparent electrode films (2a) (2b) (2c) ... Are formed separately.
第３図の工程では、フレキシブル部材（10）例えばポ
リエステルフィルムの上に、導電部材（3ab）（3bc）…
及び絶縁部材（4ab）（4bc）…が各々１本づつ平行に帯
状に形成される。例えば上記導電部材（3ab）（3bc）…
は銀（Ag）ペーストやその他の金属ペーストをスクリー
ン印刷手法により高さ約10〜20μｍ、幅約100〜150μｍ
にパターニングされた後、乾燥させられる。その後、絶
縁部材（4ab）（4bc）…が形成される。絶縁部材（4a
b）（4bc）…としては後工程で形成され半導体光活性層
として動作する非晶質半導体膜に拡散したりすることの
ない材料、例えば二酸化シリコン（SiO2）粉末をペース
ト状にしたSiO2ペーストやその他の無機材料が選択さ
れ、上記Agペーストと同様スクリーン印刷手法により所
定の箇所に高さ約10〜20μｍ、幅約100〜150μｍにパタ
ーニングされた後乾燥させられる。In the process shown in FIG. 3, the conductive member (3ab) (3bc) ...
, And the insulating members (4ab) (4bc) are formed in parallel one by one. For example, the conductive member (3ab) (3bc) ...
Is a silver (Ag) paste or other metal paste that is screen printed with a height of about 10 to 20 μm and a width of about 100 to 150 μm.
After being patterned, it is dried. After that, the insulating members (4ab) (4bc) ... Are formed. Insulation member (4a
b) (4bc) ... if not material or to diffuse into the amorphous semiconductor film that acts as a semiconductor photoactive layer is formed in a later step, for example, silicon dioxide (SiO 2) SiO 2 powder was a paste A paste or other inorganic material is selected, and similar to the above-mentioned Ag paste, a screen printing technique is used to pattern a predetermined location to a height of about 10 to 20 μm and a width of about 100 to 150 μm, and then dried.
第４図の工程ではフレキシブル部材（10）上に一旦印
刷形成された導電部材（3ab）（3bc）…と絶縁部材（4a
b）（4bc）…が、フレキシブル部材（10）の柔軟性を利
用して透明電極膜（2b）（2c）…上に転写される。即
ち、透明電極膜（2a）（2b）（2c）…の隣接間隔部（a
b）（bc）…の近傍に、導電部材（3ab）（3bc）…が上
記隣接間隔部（ab）（bc）…と平行になるように位置決
めされた後、当接せしめ加圧しながら約150℃５分間の
加熱処理が施される。これによって、導電部材（3ab）
（3bc）…、絶縁部材（4ab）（4bc）…が透明電極膜（2
b）（2c）…上に転写される。In the step shown in FIG. 4, the conductive members (3ab) (3bc) ... and the insulating member (4a) which are once formed by printing on the flexible member (10).
b) (4bc) are transferred onto the transparent electrode films (2b) (2c) ... by utilizing the flexibility of the flexible member (10). That is, the adjacent space (a) between the transparent electrode films (2a) (2b) (2c) ...
b) In the vicinity of (bc) ..., the conductive members (3ab) (3bc) ... are positioned so as to be in parallel with the adjacent space portions (ab) (bc). Heat treatment is performed at 5 ° C. for 5 minutes. This makes the conductive member (3ab)
(3bc) ..., insulating member (4ab) (4bc) ... are transparent electrode film (2
b) (2c)… Transcribed on top.
第５図の工程では、フレキシブル部材（10）を剥離す
ると共に、基板（１）を加熱炉に収納し、約550°、１
〜２時間の加熱処理を施す。斯る加熱処理により、ペー
スト状の導電部材（3ab）（3bc）…及び絶縁部材（4a
b）（4bc）が焼成される。In the process shown in FIG. 5, the flexible member (10) is peeled off, the substrate (1) is placed in a heating furnace, and the temperature is about 550 °.
Heat treatment is performed for 2 hours. By such heat treatment, the paste-like conductive member (3ab) (3bc) ... and the insulating member (4a)
b) (4bc) is fired.
第６図の工程では、各透明電極膜（2a）（2b）（2c）
…、上記導電部材（3ab）（3bc）…及び絶縁部材（4a
b）（4bc）…の表面を含んで基板（１）の上のほぼ全面
に光電変換に有効に寄与する厚さ4000Å〜7000Åの非晶
質シリコン（ａ−Si）等の非晶質半導体膜（５）がプラ
ズマCVD法や光CVD法により形成される。斯る半導体膜
（５）はB2H6やPH3の添加によりその内部に膜面に平行
なpin接合を含む。In the process of FIG. 6, each transparent electrode film (2a) (2b) (2c)
..., the conductive member (3ab) (3bc), and the insulating member (4a)
b) An amorphous semiconductor film such as amorphous silicon (a-Si) having a thickness of 4000Å to 7000Å that effectively contributes to photoelectric conversion on almost the entire surface of the substrate (1) including the surface of (4bc). (5) is formed by the plasma CVD method or the photo CVD method. Such a semiconductor film (5) contains a pin junction parallel to the film surface inside by adding B 2 H 6 or PH 3 .
尚、半導体光活性層として動作する半導体は上記ａ−
Si系の半導体に限らず硫化カドミウム（cds）、テルル
化カドミウム（cdTe）、セレン（Se）等の膜状半導体で
あっても良い。The semiconductor that operates as the semiconductor photoactive layer is a-
Not limited to the Si-based semiconductor, a film semiconductor such as cadmium sulfide (cds), cadmium telluride (cdTe), or selenium (Se) may be used.
第７図の工程では、半導体膜（５）及び透明電極膜
（2a）（2b）（2c）…の各露出部分を含んで基板（１）
上全面にAl、Ti、Ag、SnO2、ITO等の裏面電極膜（６）
が被着される。In the process shown in FIG. 7, the substrate (1) including the exposed portions of the semiconductor film (5) and the transparent electrode films (2a) (2b) (2c) ...
Backside electrode film of Al, Ti, Ag, SnO 2 , ITO, etc. on the entire upper surface (6)
Is put on.
第８図の最終工程では、導電部材（3ab）（3bc）…及
び絶縁部材（4ab）（4bc）…の表面上に位置する非晶質
半導体膜（５）及び裏面電極膜（６）の積層体部分にこ
の積層体部分の表面側から第１、第２のレーザビーム(L
B1)(LB2)が照射される。導電部材（3ab）（3bc）…上の
積層体部分に照射される第１のレーザビーム（LB1）
は、斯る積層体部分を溶融するに足りるエネルギ密度を
備えることによって、上記積層体を溶融し、その溶融に
より発生した溶融物、即ちシリサイド合金は周囲の非晶
質半導体膜（５）を貫通した形でその直下に位置する導
電部材（3ab）（3bc）…と当接する。In the final step of FIG. 8, the amorphous semiconductor film (5) and the back electrode film (6) are laminated on the surfaces of the conductive members (3ab) (3bc) ... And the insulating members (4ab) (4bc). The first and second laser beams (L
B 1 ) (LB 2 ) is irradiated. Conductive member (3ab) (3bc) ... 1st laser beam (LB 1 ) irradiated on the laminated body part
Has a sufficient energy density to melt such a laminated body portion, so that the laminated body is melted, and a melt generated by the melting, that is, a silicide alloy penetrates the surrounding amorphous semiconductor film (5). In contact with the conductive members (3ab) (3bc) ...
一方、絶縁部材（4ab）（4bc）…上の積層体部分に照
射される第２のレーザビーム（LB2）は、斯る積層体部
分を除去するに足りる十分なエネルギ密度を備えてい
る。即ち、第２のレーザビーム（LB2）が照射される積
層体部分は複数の光電変換素子（7a）（7b）（7c）…に
跨って一様に連なった非晶質半導体膜（５）及び裏面電
極膜（６）の積層体を上記各素子（7a）（7b）（7c）…
毎に分割せんがために除去される箇所であり、この第２
のレーザビーム（LB2）の照射によって、上記積層体を
電気的に且つ物理的に分離する分離溝（8ab）（8bc）…
が形成される。On the other hand, the second laser beam (LB 2 ) applied to the laminated body portion on the insulating members (4ab) (4bc) ... Has a sufficient energy density for removing the laminated body portion. That is, the amorphous semiconductor film (5) in which the laminated body portion irradiated with the second laser beam (LB 2 ) is uniformly connected over the plurality of photoelectric conversion elements (7a) (7b) (7c). The laminated body of the back electrode film (6) and the element (7a) (7b) (7c) ...
This is the part that is removed because of the division of each
Of the laser beam (LB 2 ) to electrically and physically separate the laminate from each other (8ab) (8bc) ...
Is formed.
この様にして、裏面電極膜（6a）（6b）…と透明電極
膜（2b）（2c）…との電気的接続工程と実質的に同一工
程により、非晶質半導体膜（５）と裏面電極膜（６）と
の不用な部分…を除去しそれらを分離する分離溝（8a
b）（8bc）が形成されて個別の各裏面電極膜（6a）（6
b）（6c）…が分割配置される。その結果、相隣り合う
光電変換素子（7a）（7b）（7c）…の裏面電極膜（6a）
（6b）…と透明電極膜（2b）（2c）…は上記分離溝（8a
b）（8bc）…より裏面電極膜（6a）（6b）（6c）…の隣
接間隔部（ab）（bc）…に近い側に於いて結合し、上記
光電変換素子（7a）（7b）（7c）…は導電部材（3ab）
（3bc）…を介して電気的に直列接続される。In this manner, the amorphous semiconductor film (5) and the back surface are formed by substantially the same process as the electrical connection process between the back surface electrode films (6a) (6b) ... And the transparent electrode films (2b) (2c). Separation groove (8a) for removing unnecessary portions with the electrode film (6) and separating them.
b) (8bc) is formed on each back electrode film (6a) (6
b) (6c) ... are arranged separately. As a result, the back electrode film (6a) of the photoelectric conversion elements (7a) (7b) (7c) ... Adjacent to each other
(6b) ... and transparent electrode films (2b) (2c) ...
b) (8bc) ... Coupled on the side closer to the adjacent spacing portions (ab) (bc) ... of the back electrode films (6a) (6b) (6c) ..., and the photoelectric conversion elements (7a) (7b) (7c) ... is a conductive member (3ab)
(3bc) ... electrically connected in series.
（ト） 発明の効果 本発明製造方法は以上の説明から明らかな如く、絶縁
ペーストは一旦平坦なフレキシブル部材に印刷され、そ
の後フレキシブル部材の柔軟性を利用して第１電極上に
おける半導体膜の分離予定箇所に転写されるので、半導
体膜を各個別の光電変換素子毎に分離すべく照射される
エネルギビームは、上記絶縁ペーストからなる絶縁部材
によって下層に位置する第１電極への到達は阻止され、
従って、エネルギビームを使用したパターニングを曲面
を持つ光起電力装置にも適用することができる。(G) As is apparent from the above description, the insulating paste is once printed on a flat flexible member, and then the flexibility of the flexible member is used to separate the semiconductor film on the first electrode. Since it is transferred to a predetermined position, the energy beam irradiated to separate the semiconductor film into individual photoelectric conversion elements is prevented from reaching the first electrode located in the lower layer by the insulating member made of the insulating paste. ,
Therefore, the patterning using the energy beam can be applied to a photovoltaic device having a curved surface.
第１図は本発明製造方法により製造される和瓦状光起電
力装置の概略的斜視図、第２図乃至第８図は本発明製造
方法を工程順に示す断面図である。 （１）……基板、（2a）（2b）（2c）……透明電極膜、
（3ab）（3bc）……導電部材、（4ab）（4bc）……絶縁
部材、（５）……半導体膜、（6a）（6b）（6c）……裏
面電極膜、（7a）（7b）（7c）……光電変換素子、（1
0）……フレキシブル部材。FIG. 1 is a schematic perspective view of a Japanese tile-like photovoltaic device manufactured by the manufacturing method of the present invention, and FIGS. 2 to 8 are sectional views showing the manufacturing method of the present invention in the order of steps. (1) …… Substrate, (2a) (2b) (2c) …… Transparent electrode film,
(3ab) (3bc) ... conductive member, (4ab) (4bc) ... insulating member, (5) ... semiconductor film, (6a) (6b) (6c) ... back surface electrode film, (7a) (7b) ) (7c) …… Photoelectric conversion element, (1
0) ... Flexible material.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−31259（ＪＰ，Ａ) 特開 昭62−33477（ＪＰ，Ａ) 特開 昭59−155181（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) Reference JP-A-60-31259 (JP, A) JP-A-62-33477 (JP, A) JP-A-59-155181 (JP, A)
Claims (1)
部分からなる複数の光電変換素子を基板の曲面に形成
し、それら光電変換素子を互いに電気的に直列接続せし
めた光起電力装置の製造方法であって、上記基板の複数
の光電変換部分に跨って被着される半導体膜を、各個別
の光電変換素子毎にエネルギビームの照射により分離す
るに先立って、上記エネルギビームの照射により分離さ
れる分離部分に、エネルギビームの下層に位置する第１
電極への到達を阻止する絶縁ペーストからなる絶縁部材
を配置すべく、上記ペーストを一旦平坦なフレキシブル
部材に印刷し、その後当該ペーストをフレキシブル部材
の柔軟性を利用して上記第１電極上における上記半導体
膜の分離予定箇所に転写したことを特徴とする光起電力
装置の製造方法。1. A photovoltaic device in which a plurality of photoelectric conversion elements composed of a laminated body portion of a first electrode, a semiconductor film and a second electrode are formed on a curved surface of a substrate, and the photoelectric conversion elements are electrically connected in series with each other. A method for manufacturing a device, wherein a semiconductor film deposited over a plurality of photoelectric conversion portions of the substrate is separated by irradiation with an energy beam for each individual photoelectric conversion element, A first part located under the energy beam in the separation part separated by irradiation
In order to arrange an insulating member made of an insulating paste that prevents the electrode from reaching the electrode, the paste is once printed on a flat flexible member, and then the paste is used on the first electrode by utilizing the flexibility of the flexible member. A method for manufacturing a photovoltaic device, which comprises transferring to a predetermined separation portion of a semiconductor film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62119903A JPH0831612B2 (en) | 1987-05-15 | 1987-05-15 | Photovoltaic device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62119903A JPH0831612B2 (en) | 1987-05-15 | 1987-05-15 | Photovoltaic device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63284871A JPS63284871A (en) | 1988-11-22 |
| JPH0831612B2 true JPH0831612B2 (en) | 1996-03-27 |
Family
ID=14773067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62119903A Expired - Lifetime JPH0831612B2 (en) | 1987-05-15 | 1987-05-15 | Photovoltaic device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831612B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5538902A (en) * | 1993-06-29 | 1996-07-23 | Sanyo Electric Co., Ltd. | Method of fabricating a photovoltaic device having a three-dimensional shape |
| US5639314A (en) * | 1993-06-29 | 1997-06-17 | Sanyo Electric Co., Ltd. | Photovoltaic device including plural interconnected photoelectric cells, and method of making the same |
| WO2025197949A1 (en) * | 2024-03-19 | 2025-09-25 | 富士フイルム株式会社 | Method for manufacturing solar cell |
-
1987
- 1987-05-15 JP JP62119903A patent/JPH0831612B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63284871A (en) | 1988-11-22 |
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