JPH0833450B2 - Semiconductor radiation sensor and sensor array - Google Patents
Semiconductor radiation sensor and sensor arrayInfo
- Publication number
- JPH0833450B2 JPH0833450B2 JP1062470A JP6247089A JPH0833450B2 JP H0833450 B2 JPH0833450 B2 JP H0833450B2 JP 1062470 A JP1062470 A JP 1062470A JP 6247089 A JP6247089 A JP 6247089A JP H0833450 B2 JPH0833450 B2 JP H0833450B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- sensor
- semiconductor radiation
- mobility
- radiation sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 230000005855 radiation Effects 0.000 title claims description 29
- 239000013078 crystal Substances 0.000 claims description 31
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical group C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 8
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 3
- 230000037230 mobility Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009532 heart rate measurement Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Measurement Of Radiation (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体放射線センサおよびセンサアレイに関
する。FIELD OF THE INVENTION The present invention relates to semiconductor radiation sensors and sensor arrays.
従来の技術 放射線受像方法として、半導体検出器アレイを用い
て、放射線量子個個の信号を検知し、その信号の計数値
を画素濃度として、画像を表示する方法が開発されてい
る（特開昭59−100885号公報）。この方法によれば放射
線量子個個のエネルギ情報を、例えば、波高弁別回路を
用いることにより、検知することができる。このため、
例えば、Ｘ線CT装置に適用すれば、Ｘ線ハードニングの
影響の除去や、さらにはＸ線エネルギを可変にした場合
のデータをもとに計算処理することによる被検体の原子
量分布測定等が可能となり、放射線画像測定において
は、画期的なものである。2. Description of the Related Art As a radiation image receiving method, a method has been developed in which a semiconductor detector array is used to detect signals of a quantum number of radiation, and a count value of the signals is used as a pixel density to display an image (Japanese Patent Laid-Open Publication No. Sho. 59-100885). According to this method, the energy information for each quantum of radiation can be detected by using, for example, a wave height discrimination circuit. For this reason,
For example, when it is applied to an X-ray CT apparatus, it is possible to remove the influence of X-ray hardening, and further to measure the atomic weight distribution of the object by performing a calculation process based on the data when the X-ray energy is variable. This is possible, which is a breakthrough in radiation image measurement.
発明が解決しょうとする課題 上記装置においては、高精度の画像を得ようとする場
合、検出する放射線量子の個個のパルス信号の波高分離
能と応答時間が問題となる。放射線量子の個々のパルス
信号の波高は、発生した電荷の総量に比例するため、正
確な波高分布を測定するためには、発生した電子正孔対
による電荷を完全に収集し、積算する必要がある。この
ため、波高測定においては、電荷増幅型のアンプが使わ
れている。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In the above-mentioned device, in order to obtain a high-accuracy image, the crest separation ability and the response time of individual pulse signals of the radiation quantum to be detected become problems. Since the pulse height of each pulse signal of the radiation quantum is proportional to the total amount of generated charges, it is necessary to completely collect and integrate the charges generated by the electron-hole pairs in order to accurately measure the pulse height distribution. is there. Therefore, a charge amplification type amplifier is used in the wave height measurement.
しかし、このアンプは応答速度が遅く、高計数率が必
要な本発明には適用しにくい。このため、高計数率で
は、正確な波高分布の測定は困難であると考えられてい
た。However, this amplifier has a slow response speed and is difficult to apply to the present invention which requires a high count rate. Therefore, it was considered difficult to accurately measure the wave height distribution at a high count rate.
また、全電荷を積算せずに、高速なパルスを高速に検
出する方法として、電流電圧変換型の増幅を行う方法が
あるが、センサ内での信号の発生場所により波形が変化
する現象があるため、高精度の測定には不適とされてき
た。Further, there is a current-voltage conversion type amplification method as a method for detecting a high-speed pulse at high speed without integrating all charges, but there is a phenomenon that the waveform changes depending on the position where the signal is generated in the sensor. Therefore, it has been unsuitable for high-precision measurement.
本発明は上記従来技術に基づき、高計数率でも正確な
波高分布の測定を可能とする手段を提供するものであ
る。The present invention provides means for enabling accurate measurement of the wave height distribution even at a high count rate based on the above-mentioned conventional technique.
課題を解決するための手段 本発明の半導体放射線センサは、化合物半導体の電子
移動度と正孔移動度の差が最小となる方向に垂直な結晶
方位面に対向電極を形成したものである。Means for Solving the Problems A semiconductor radiation sensor of the present invention is one in which a counter electrode is formed on a crystal orientation plane perpendicular to a direction in which a difference between electron mobility and hole mobility of a compound semiconductor is minimum.
また、本発明の半導体放射線センサアレイは、化合物
半導体の電子移動度と正孔移動度の差が最小となる方向
に垂直な結晶方位面に対向電極を形成した半導体放射線
センサを直線状もしくは曲線状に配列し、相接する結晶
の結晶方位面の電子移動度、正孔移動度、もしくはそれ
らの和が最小となるような結晶方位面に垂直な方向に前
記半導体放射線センサを並列配置したものである。Further, the semiconductor radiation sensor array of the present invention is a semiconductor radiation sensor in which a counter electrode is formed in a crystal orientation plane perpendicular to the direction in which the difference between the electron mobility and the hole mobility of a compound semiconductor is minimum, and the semiconductor radiation sensor is linear or curved. And the semiconductor radiation sensors are arranged in parallel in a direction perpendicular to the crystal orientation plane such that electron mobility, hole mobility of the crystal orientation planes of the adjoining crystals, or their sum is minimized. is there.
作用 本来、半導体センサの応答時間は、半導体内で発生し
た電子−正孔対が各電極に到達する時間で決まる。又、
発生する電子あるいは正孔の電流は、発生した電荷に比
例する。電荷の積分をせずに発生する電流を測定するよ
うにすると、発生する信号は、電荷の発生した場所に依
存する。これは、第２図（ａ）（ｂ）に示すように、電
子と正孔の移動度の差による。そこで、半導体センサの
構成を電子と正孔の移動度の差を少なくした構成（μｅ
＝μａ）とすることにより第２図（ｃ）に示すように、
放射線量子の個々の発生電荷パルス信号の波形は、発生
した位置に依存せずに一定となり、電荷の積分を行わな
くとも発生した電荷の総量に比例したパルス波高を出力
するようになり、正確な波高分布を測定出来るようにな
る。Action Originally, the response time of the semiconductor sensor is determined by the time required for the electron-hole pairs generated in the semiconductor to reach each electrode. or,
The generated electron or hole current is proportional to the generated charge. When the generated current is measured without integrating the charge, the generated signal depends on the place where the charge is generated. This is due to the difference in electron and hole mobilities, as shown in FIGS. Therefore, the semiconductor sensor has a structure in which the difference in mobility between electrons and holes is reduced (μ e
= Μ a ), as shown in FIG. 2 (c),
The waveform of each generated charge pulse signal of the radiation quantum becomes constant irrespective of the position where it is generated, and the pulse wave height that is proportional to the total amount of generated charge is output even if the charge is not integrated. It becomes possible to measure the wave height distribution.
また、センサアレイにおいては、結晶内部の電荷の動
きは、高速な応答においてはその移動度に規制される。
特に、センサアレイのセンサピッチが、センサ厚に対し
て小さくなってくると、隣のセンサへの漏れが発生し易
くなり、正確なパルス信号の波高を測定できなくなる。
そこで、結晶内の方位を隣の相接する結晶の結晶方位面
の電子移動度と正孔移動度が最小になるような結晶方位
の方向にセンサアレイを配置することにより、漏れを減
少させ、正確な波高分布を測定することが出来るように
なる。Further, in the sensor array, the movement of charges inside the crystal is restricted by its mobility in the case of high-speed response.
In particular, when the sensor pitch of the sensor array becomes smaller than the sensor thickness, leakage to an adjacent sensor is likely to occur, and accurate pulse height of the pulse signal cannot be measured.
Therefore, by arranging the sensor array in the direction of the crystal orientation that minimizes the electron mobility and hole mobility of the crystal orientation plane of the adjacent crystal, the leakage is reduced, It becomes possible to measure accurate wave height distribution.
これらの作用は、結晶構造の複雑な化合物半導体結晶
において顕著に現れる。又、イオン結合性の強い結晶で
は、電子や正孔が結晶を構成する原子から強い作用を受
けるため、更に大きな効果が出る。These effects remarkably appear in a compound semiconductor crystal having a complicated crystal structure. Further, in a crystal having a strong ionic bond, electrons and holes are strongly affected by the atoms constituting the crystal, so that a larger effect can be obtained.
実施例 第１図に本発明の１実施例を示す。センサアレイ１、
テルル化カドミウム（CdTe）の半導体センサを線状に配
列した個素子２よりの放射線量子信号を電流電圧変換型
アンプ３で増幅し、入射放射線信号として波高弁別回路
に出力する。Embodiment FIG. 1 shows an embodiment of the present invention. Sensor array 1,
A radiation quantum signal from an individual element 2 in which a semiconductor sensor of cadmium telluride (CdTe) is linearly arranged is amplified by a current-voltage conversion amplifier 3 and output as an incident radiation signal to a wave height discrimination circuit.
センサは、平行平板型を基本としている。本実施例の
CdTeは結晶のエネルギバンドギャップが約1.5eVと大き
く、室温で冷却無しで使用できる半導体センサとして近
年実用化されつつある。しかし、正孔の移動度が60（cm
2/Vsec）1)とSiの約1/10、Geの1/30と小さいため高速な
パルス測定には適さないとされてきた。また、CdTeの電
子移動度は650（cm2/Vsec）1)であり、正孔との移動度
の比が10倍もあり、Siの３倍、Geの２倍に比べて非常に
大きくエネルギスペクトル測定用としても不適とされて
きた。The sensor is basically a parallel plate type. Of this embodiment
CdTe has a large crystal energy bandgap of about 1.5 eV, and has recently been put into practical use as a semiconductor sensor that can be used at room temperature without cooling. However, the hole mobility is 60 (cm
2 / Vsec) 1) and about 1/10 of Si and 1/30 of Ge, which are small, it has been considered unsuitable for high-speed pulse measurement. In addition, the electron mobility of CdTe is 650 (cm 2 / Vsec) 1) , and the mobility ratio with holes is 10 times, which is much larger than that of Si and twice that of Ge. It has also been unsuitable for spectrum measurement.
CdTeは閃亜鉛鉱型の結晶構造を有しており、また、カ
ドミウム（Cd）は２価、テルル（Te）は６価の元素であ
るため、イオン結合性が強く、放射線センサとして一般
的なシリコン（Si）やゲルマニウム（Ge）とはその電気
的特性に大きな差異があると考えられる。そこで、我々
は、CdTeの結晶方位と正孔と電子の移動度についての検
討を行った。その結果、電子の移動度は、結晶構造では
大きな変化はないが、正孔の移動度は結晶構造による変
化が大きい事を見いだした。へき開面が得易いために、
CdTeの結晶構造として、一般的に用いてきた（111）面
は最も正孔移動度が小さく、スペクトルは悪く、従来使
用されていなかった（100）面が最も大きな値を示し、
かなり良好なスペクトルを得た。これは、1978年にL.Sv
obらが示したCdTeの正孔の有効質量のデータ2)の傾向と
よく一致する。CdTe has a zinc blende type crystal structure, and since cadmium (Cd) is a divalent element and tellurium (Te) is a hexavalent element, it has a strong ionic bond property and is commonly used as a radiation sensor. It is considered that there is a large difference in electrical characteristics from silicon (Si) and germanium (Ge). Therefore, we investigated the crystal orientation of CdTe and the mobility of holes and electrons. As a result, it was found that the electron mobility does not change much in the crystal structure, but the hole mobility changes largely in the crystal structure. Since it is easy to obtain a cleavage plane,
As for the crystal structure of CdTe, the (111) plane that has been generally used has the smallest hole mobility and the spectrum is bad, and the (100) plane that has not been used conventionally shows the largest value.
A fairly good spectrum was obtained. This is L.Sv in 1978.
This agrees well with the tendency of the data of the effective mass of holes in CdTe 2) shown by ob et al.
第３図および第４図に各結晶構造における241Amの出
力信号波形とスペクトル波形を示すが、本発明の有効性
がよく示されている。The output signal waveform and the spectrum waveform of 241Am in each crystal structure are shown in FIGS. 3 and 4, and the effectiveness of the present invention is well shown.
センサのアレイ化においては、隣接するセンサとのク
ロストークは、隣接センサへの電荷の漏れと、該隣接セ
ンサからの電荷の漏れに起因する。電荷の漏れは電子あ
るいは正孔の単位時間当りの移動量、つまり移動度と比
例した量に比例する。このことより、センサを並列配置
する方向の結晶構造は、移動度が最も小さい方位とする
ことによりクロストークを最小にすることが出来る。こ
のアレイの１実施例として、第５図に示すように、CdTe
の（111）面に垂直な面上に電極を形成したセンサアレ
イを示す。In arraying sensors, crosstalk with adjacent sensors is due to charge leakage to and from adjacent sensors. The charge leakage is proportional to the amount of movement of electrons or holes per unit time, that is, the amount proportional to the mobility. From this, the crystal structure in the direction in which the sensors are arranged in parallel can minimize the crosstalk by setting the orientation in which the mobility is the smallest. As an example of this array, as shown in FIG.
2 shows a sensor array in which electrodes are formed on a plane perpendicular to the (111) plane of.
また、センサの高速性と、アレイのクロストークの減
少とを実用的の実現したセンサアレイの１実施例とし
て、第６図に示すように、CdTeの（100）面上に、（11
0）面に垂直な直線方向に電極を形成したセンサアレイ
を示す。In addition, as one embodiment of a sensor array in which the high speed of the sensor and the reduction of the crosstalk of the array are practically realized, as shown in FIG. 6, on the (100) plane of CdTe, (11)
A sensor array in which electrodes are formed in a linear direction perpendicular to the (0) plane is shown.
以上、CdTeを１実施例として述べたが閃亜鉛鉱型の結
晶であるGaAs、InP、AlSb、BP、GaSe、ZnTeなどにおい
ても同様な効果が得られる。As described above, CdTe has been described as an example, but similar effects can be obtained with zinc blende type crystals such as GaAs, InP, AlSb, BP, GaSe, and ZnTe.
発明の効果 本発明により、高計数率でも、正確な波高分布の測定
を可能にすることができ、エネルギ弁別機能を有したセ
ンサや、センサアレイが簡単な構成で実現可能となる。
例えば、これを医用画像に応用すると、低被曝線量であ
っても、高画質で、かつ高機能な装置を実現できる。Effect of the Invention According to the present invention, it is possible to accurately measure the wave height distribution even at a high count rate, and it is possible to realize a sensor having an energy discrimination function and a sensor array with a simple configuration.
For example, when this is applied to a medical image, it is possible to realize an apparatus having high image quality and high functionality even with a low radiation dose.
第１図は、本発明の一実施例の半導体放射線センサの概
念図、第２図は電流出力の時間変化図、第３図は従来例
と本発明による半導体放射線センサの出力信号の差の説
明図、第４図は同センサのスペクトル出力差の説明図、
第５図および第６図は本発明の一実施例の半導体放射線
センサアレイの結晶構造の方位示す図である。 １……CdTe結晶、２……高速パルスアンプ、３……バイ
アス電源、４……集電極、５……結晶方位（100）面、
６……入射放射線。FIG. 1 is a conceptual diagram of a semiconductor radiation sensor according to an embodiment of the present invention, FIG. 2 is a time change diagram of a current output, and FIG. 3 is an explanation of a difference between output signals of a conventional example and a semiconductor radiation sensor according to the present invention. FIG. 4 is an explanatory diagram of the spectrum output difference of the sensor,
5 and 6 are views showing the orientation of the crystal structure of the semiconductor radiation sensor array of one embodiment of the present invention. 1 ... CdTe crystal, 2 ... High-speed pulse amplifier, 3 ... Bias power supply, 4 ... Collector electrode, 5 ... Crystal orientation (100) plane,
6 ... Incident radiation.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 大土 哲郎 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (56)参考文献 特開 昭63−182870（ＪＰ，Ａ) 特開 昭55−95886（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tetsuro Ochi 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP-A-63-182870 (JP, A) JP-A-55- 95886 (JP, A)
Claims (5)
差が最小となる方向に垂直な結晶方位面に対向電極を形
成したことを特徴とする半導体放射線センサ。1. A semiconductor radiation sensor characterized in that a counter electrode is formed on a crystal orientation plane perpendicular to a direction in which a difference between electron mobility and hole mobility of a compound semiconductor is minimized.
することを特徴とする請求項１記載の半導体放射線セン
サ。2. The semiconductor radiation sensor according to claim 1, wherein the compound semiconductor has a zinc blende type crystal structure.
ことを特徴とする請求項１記載の半導体放射線センサ。3. The semiconductor radiation sensor according to claim 1, wherein the compound semiconductor is cadmium telluride.
て、対向電極面が（100）であることを特徴とする請求
項１記載の半導体放射線センサ。4. The semiconductor radiation sensor according to claim 1, wherein the compound semiconductor is cadmium telluride and the counter electrode surface is (100).
差が最小となる方向に垂直な結晶方位面に対向電極を形
成した半導体放射線センサを直線状もしくは曲線状に配
列したセンサアレイであって、相接する結晶の結晶方位
面の電子移動度、正孔移動度、もしくはそれらの和が最
小となるような結晶方位面に垂直な方向に前記半導体放
射線センサを並列配置したことを特徴とする半導体放射
線センサアレイ。5. A sensor array in which semiconductor radiation sensors, each having a counter electrode formed on a crystal orientation plane perpendicular to a direction in which a difference between electron mobility and hole mobility of a compound semiconductor is minimized, are arranged linearly or curvedly. It is characterized in that the semiconductor radiation sensors are arranged in parallel in a direction perpendicular to the crystal orientation plane such that the electron mobility, hole mobility, or the sum thereof of the crystal orientation planes of the adjoining crystals is minimized. Semiconductor radiation sensor array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1062470A JPH0833450B2 (en) | 1989-03-15 | 1989-03-15 | Semiconductor radiation sensor and sensor array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1062470A JPH0833450B2 (en) | 1989-03-15 | 1989-03-15 | Semiconductor radiation sensor and sensor array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02242190A JPH02242190A (en) | 1990-09-26 |
| JPH0833450B2 true JPH0833450B2 (en) | 1996-03-29 |
Family
ID=13201118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1062470A Expired - Fee Related JPH0833450B2 (en) | 1989-03-15 | 1989-03-15 | Semiconductor radiation sensor and sensor array |
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| Country | Link |
|---|---|
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|---|---|---|---|---|
| DE4344252A1 (en) * | 1993-12-23 | 1995-06-29 | Siemens Ag | X=ray detecting element with high X=ray to electrical signal conversion efficiency |
| JP5077955B2 (en) * | 2008-04-23 | 2012-11-21 | 国立大学法人東北大学 | Radiation detection apparatus and positron emission tomography apparatus having the same |
| CN111157547A (en) * | 2020-01-20 | 2020-05-15 | 成都闰德芯传感器技术有限公司 | Detection method of cadmium zinc telluride crystal |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5595886A (en) * | 1979-01-17 | 1980-07-21 | Tdk Corp | Neutron detector |
| JP2687122B2 (en) * | 1987-01-26 | 1997-12-08 | 株式会社ジャパンエナジー | Multilayer CdTe radiation detection element |
-
1989
- 1989-03-15 JP JP1062470A patent/JPH0833450B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02242190A (en) | 1990-09-26 |
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