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JPH0834141B2 - Non-contact position sensor - Google Patents
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JPH0834141B2 - Non-contact position sensor - Google Patents

Non-contact position sensor

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Publication number
JPH0834141B2
JPH0834141B2 JP62023195A JP2319587A JPH0834141B2 JP H0834141 B2 JPH0834141 B2 JP H0834141B2 JP 62023195 A JP62023195 A JP 62023195A JP 2319587 A JP2319587 A JP 2319587A JP H0834141 B2 JPH0834141 B2 JP H0834141B2
Authority
JP
Japan
Prior art keywords
magnetic field
generating means
field generating
contact position
magnetoresistive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62023195A
Other languages
Japanese (ja)
Other versions
JPS63190392A (en
Inventor
建一 青
好 吉野
俊和 荒砂
一朗 伊澤
利和 松下
勝彦 有賀
Original Assignee
日本電装株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電装株式会社 filed Critical 日本電装株式会社
Priority to JP62023195A priority Critical patent/JPH0834141B2/en
Priority to EP87110695A priority patent/EP0255052B1/en
Priority to DE3788831T priority patent/DE3788831T2/en
Priority to US07/076,891 priority patent/US4835509A/en
Priority to KR1019870008259A priority patent/KR900007100B1/en
Publication of JPS63190392A publication Critical patent/JPS63190392A/en
Publication of JPH0834141B2 publication Critical patent/JPH0834141B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、強磁性磁気抵抗素子(以下、「MR素子」と
いう)を用いた非接触ポジションセンサに関する。
The present invention relates to a non-contact position sensor using a ferromagnetic magnetoresistive element (hereinafter referred to as "MR element").

〔従来の技術〕[Conventional technology]

非接触式ポテンショメータの磁気回路は、従来より有
底円筒状コアや回転磁性体および永久磁石とともに、閉
磁路として構成され、回転磁性体の先端部分に形成した
間隙に磁気抵抗素子であるInSbを配置して回転磁性体の
回転に応じた出力を発生するようになっており、そして
回転磁性体の先端部分に形成した間隙の大きさを変える
ことにより換言すれば回転磁性体の先端を所定の関数加
工することにより前述したようなInSb製の磁気抵抗素子
から所定の関数出力を得ている。
The magnetic circuit of a non-contact potentiometer is conventionally configured as a closed magnetic circuit with a cylindrical core with a bottom, a rotating magnetic body and a permanent magnet, and InSb, which is a magnetoresistive element, is placed in the gap formed at the tip of the rotating magnetic body. Then, an output is generated according to the rotation of the rotating magnetic body, and by changing the size of the gap formed at the tip portion of the rotating magnetic body, in other words, the tip of the rotating magnetic body is set to a predetermined function. By processing, a predetermined function output is obtained from the InSb magnetoresistive element as described above.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかしながら、上記従来技術に示す非接触ポテンショ
メータにおいて、回転磁性体の先端を所定の関数形状に
なるように加工することは非常に困難であり、また間隙
に狭い部分と広い部分があると磁束が狭い部分に集中
し、磁束密度の均一性が得られない。このため、磁気抵
抗素子であるInSbの出力の直線性がばらついてしまい、
非接触ポテンショメータの製造歩留りは非常に低いもの
であった。
However, in the non-contact potentiometer shown in the above-mentioned prior art, it is very difficult to process the tip of the rotating magnetic body so as to have a predetermined function shape, and if the gap has a narrow portion and a wide portion, the magnetic flux becomes narrow. The magnetic flux density is concentrated on the part, and the uniformity of the magnetic flux density cannot be obtained. Therefore, the linearity of the output of InSb, which is a magnetoresistive element, varies,
The manufacturing yield of the non-contact potentiometer was very low.

このような点に鑑み本発明者達は、特願昭61−72201
号に開示した如くMR素子を適用し、そのMR素子に磁界を
印加する磁界発生手段として、例えば扇形でその磁極が
径方向に指向するように着磁した永久磁石を使用した非
接触ポジションセンサを提案した。この場合、出力の直
線性を良く、製造歩留りも比較的高くできるものの、扇
形の永久磁石に着磁する事は容易ではなく、着磁させに
くいという問題があった。
In view of such a point, the present inventors have proposed Japanese Patent Application No. 61-72201.
As a magnetic field generating means for applying a magnetic field to the MR element as disclosed in No. 1, a non-contact position sensor using, for example, a fan-shaped permanent magnet magnetized so that its magnetic poles are oriented in the radial direction is disclosed. Proposed. In this case, although the output linearity is good and the manufacturing yield can be relatively high, there is a problem that it is not easy to magnetize the fan-shaped permanent magnet and it is difficult to magnetize it.

そこで本発明は、上記の特願昭61−72201号に開示し
た非接触ポジションセンサを改善すべく創案されたもの
で、磁界発生手段への着磁を容易に行え、しかも、出力
の直線性をより良くし得る非接触ポジションセンサを提
供する事を目的としている。
Therefore, the present invention was devised to improve the non-contact position sensor disclosed in the above-mentioned Japanese Patent Application No. 61-72201, in which the magnetic field generating means can be easily magnetized and the output linearity can be improved. An object is to provide a non-contact position sensor that can be improved.

〔問題点を解決するための手段〕[Means for solving problems]

上記の目的を達成する為に本発明は、回転可能に設け
られた可動部と、該可動部に同心的で該可動部から所定
の間隔を隔てるようにして配設された全体的に環状とな
る強磁性磁気抵抗素子と、その磁極を前記可動部の回転
軸方向に指向した磁界発生手段とを備え、 前記磁界発生手段からの磁界を、前記強磁性磁気抵抗
素子の一部には径方向に指向し、該強磁性磁気抵抗素子
の他部には垂直方向に指向し、 且つ、前記磁界発生手段を、前記回転軸方向における
その中心軸が、前記強磁性磁気抵抗素子上を通るように
回転移動可能とした事を特徴とする非接触ポジションセ
ンサを採用している。
In order to achieve the above-mentioned object, the present invention provides a movable portion rotatably provided, and an annular shape which is concentric with the movable portion and is arranged at a predetermined distance from the movable portion. And a magnetic field generating means having its magnetic pole oriented in the direction of the rotation axis of the movable part. The magnetic field from the magnetic field generating means is directed to a part of the ferromagnetic magnetoresistive element in the radial direction. The magnetic field generating means so that its central axis in the direction of the rotation axis passes over the ferromagnetic magnetoresistive element. A non-contact position sensor is used, which is characterized by being rotatable and movable.

〔作用〕[Action]

そこで本発明によると、磁界発生手段の着磁方向が可
動部の回転軸と平行な方向ですむようになり、その着磁
が容易となる。又、回転軸方向における磁界発生手段の
中心軸を、MR素子上を通るように回転移動可能としてい
る事により、該中心軸近辺のMR素子には、磁界発生手段
から何らMR素子の成す平面と平行な成分の磁界を印加す
る事なく、垂直な成分だけの磁界を印加する事ができ
る。従って、その中心軸近辺におけるMR素子の抵抗値の
減少はなくなり、MR素子の抵抗値が減少する一部との抵
抗値の差が大きくなり、その分出力の直線性がより良く
なる。
Therefore, according to the present invention, the magnetizing direction of the magnetic field generating means is only required to be in the direction parallel to the rotation axis of the movable part, which facilitates the magnetizing. Further, since the central axis of the magnetic field generating means in the direction of the rotation axis is rotatably movable so as to pass over the MR element, the MR element near the central axis has a plane formed by the MR element from the magnetic field generating means. It is possible to apply the magnetic field of only the vertical component without applying the magnetic field of the parallel component. Therefore, the resistance value of the MR element does not decrease in the vicinity of the central axis, and the difference in the resistance value from a part of the decrease in the resistance value of the MR element becomes large, and the linearity of the output is improved accordingly.

〔実施例〕〔Example〕

以下、本発明を図面に示す実施例を用いて説明する。
第1図は本発明の第1実施例であり、同図(a)にその
断面図、同図(b)に同図(a)における部分的上面
図、同図(c)に同図(b)のA−A線断面図を示す。
図において、絶縁基板1上に開口部を持つ円形または多
角形で(図は前者)全体的に環状のNi−Fe,Ni−Coなど
の薄膜から成るMR素子2a,2bを形成し、両端子部、およ
び中点部にそれぞれ電極端子3,4,5を形成する。
The present invention will be described below with reference to the embodiments shown in the drawings.
FIG. 1 shows a first embodiment of the present invention, in which FIG. 1 (a) is a sectional view thereof, FIG. 1 (b) is a partial top view of FIG. 1 (a), and FIG. The sectional view on the AA line of b) is shown.
In the figure, a circular or polygonal (the former is the figure) MR film 2a, 2b made of a thin film of Ni-Fe, Ni-Co or the like having an opening is formed on an insulating substrate 1, and both terminals are formed. The electrode terminals 3, 4 and 5 are formed at the central portion and the central portion, respectively.

かかるMR素子2a,2bの電極端子3に電源端子Vcc、電極
端子4を接地GNDとし、中点部の電極端子5から出力V
outを導出する。そして、MR素子2a,2bの成す環状パター
ンの中心に対応して、ハウジング9のボールベアリング
から成る軸受8が設けられている。軸受8には可動部6
の回転軸6aまわりに回転可能に枢支されている。この可
動部6には回転軸6a方向に沿って着磁された角柱状の永
久磁石7が磁界発生手段として使用され、回転軸方向に
おけるその中心軸cが環状のMR素子2a,2bのパターン上
を通って回転移動するように可動部6に取り付けられて
いる。なお、10は絶縁基板1を搭載する基板、11はワイ
ヤハーネス、12はハウジング9の蓋である。
The power source terminal V cc is set to the electrode terminal 3 of the MR elements 2a and 2b, the electrode terminal 4 is set to the ground GND, and the output V is output from the electrode terminal 5 at the midpoint.
Derive out . A bearing 8 formed of a ball bearing of the housing 9 is provided at the center of the annular pattern formed by the MR elements 2a and 2b. The bearing 8 has a movable part 6
Is rotatably supported around a rotary shaft 6a. A prismatic permanent magnet 7 magnetized along the direction of the rotation axis 6a is used as a magnetic field generating means in the movable portion 6, and its central axis c in the direction of the rotation axis is on the pattern of the annular MR elements 2a, 2b. It is attached to the movable portion 6 so as to rotate and move therethrough. In addition, 10 is a substrate on which the insulating substrate 1 is mounted, 11 is a wire harness, and 12 is a lid of the housing 9.

そして、例えばMR素子2a,2bに対して永久磁石7が図
のように配置している場合、永久磁石7からの磁界は、
主に回転軸6aに対して反対側に配置するMR素子2aに対し
て、MR素子2a,2bの環状パターンの成す平面と平行で且
つ電流の流れる方向に対して直交する方向、すなわち本
発明のいう径方向に指向した磁界H2が印加され、又、主
に回転軸6aに対して同じ側に配置するMR素子2bに対して
は、MR素子2a,2bの環状パターンの成す平面に垂直方向
(中心軸cと平行方向)に指向した磁界H1が印加され
る。尚、永久磁石7を回転移動する事により、磁界H1,H
2の印加する部分はMR素子2a,2b間で連続的に変化する。
又、永久磁石7がMR素子2a,2bに印加する磁界H2,H1の磁
界強度の絶対値はMR素子2a,2bの飽和磁界強度以上とな
っている。
Then, for example, when the permanent magnet 7 is arranged with respect to the MR elements 2a and 2b as shown in the figure, the magnetic field from the permanent magnet 7 is
With respect to the MR element 2a mainly arranged on the opposite side to the rotating shaft 6a, a direction parallel to the plane formed by the annular patterns of the MR elements 2a and 2b and orthogonal to the direction of current flow, that is, the present invention. A magnetic field H 2 directed in the radial direction is applied, and with respect to the MR element 2b mainly arranged on the same side with respect to the rotation axis 6a, a direction perpendicular to the plane formed by the annular patterns of the MR elements 2a and 2b. A magnetic field H 1 oriented in the direction parallel to the central axis c is applied. By rotating the permanent magnet 7, the magnetic fields H 1 , H
The portion to which 2 is applied continuously changes between the MR elements 2a and 2b.
The absolute value of the magnetic field strength of the magnetic fields H 2 and H 1 applied by the permanent magnet 7 to the MR elements 2a and 2b is equal to or higher than the saturation magnetic field strength of the MR elements 2a and 2b.

さて、MR素子2a,2bにおいては下記の事実が知られて
いる。すなわち、MR素子は電流の流れる方向に対して直
交する方向から磁界を受けると、その部分の抵抗値が減
少する特性を有しており、また、飽和磁界以上の磁界を
受けたときには、抵抗値の減少は一定となり、半導体式
磁気抵抗素子やホール素子と相違して安定な出力が得ら
れる特徴を有している。
By the way, the following facts are known in the MR elements 2a and 2b. That is, the MR element has the characteristic that the resistance value of the MR element decreases when it receives a magnetic field from a direction orthogonal to the direction of current flow. Has a characteristic that a stable output can be obtained unlike a semiconductor type magnetoresistive element or a Hall element.

そこで本実施例では、上述のようにMR素子2aは径方向
から磁界H2を受けており、その抵抗値は減少する。又、
MR素子2bは垂直方向から磁界H1を受けており、その抵抗
値は変化しない。そして、永久磁石7の回転移動に伴い
MR素子2a,2bの抵抗値は連続的に変化し、非接触ポジシ
ョンセンサの出力Voutは第2図の可動部6の回転角度と
出力Voutとの関係をあらわすグラフの実線に示すように
略直線状態となる。
Therefore, in this embodiment, the MR element 2a receives the magnetic field H 2 from the radial direction as described above, and the resistance value thereof decreases. or,
The MR element 2b receives the magnetic field H 1 from the vertical direction, and its resistance value does not change. And with the rotational movement of the permanent magnet 7,
The resistance values of the MR elements 2a and 2b continuously change, and the output V out of the non-contact position sensor is as shown by the solid line in the graph showing the relationship between the rotation angle of the movable part 6 and the output V out in FIG. It becomes a substantially straight line state.

ここで本実施例では、永久磁石7の中心軸cがMR素子
2a,2bのパターン上を通って回転移動するようになって
おり、第1図のように配置している場合、中心軸c近辺
のMR素子2bには永久磁石7から、MR素子2bの抵抗値を減
少させる径方向成分を含んだ磁界を印加する事なく、そ
の抵抗値に変化のない垂直成分だけの磁界H1を印加する
事ができる。従って、MR素子2aとMR素子2bとの抵抗値の
差を最も大きくできるので、出力Voutの大きさを大き
く、又、その回転角度に対する直線性を最も良好な状態
にし得る。尚、中心軸cとMR素子2bとが相対的にずれて
いる場合、MR素子2bの中心軸c近辺の抵抗値が部分的に
減少するため、その出力は第2図中点線で示すようにそ
の直線性が多少悪化する。
Here, in the present embodiment, the central axis c of the permanent magnet 7 is the MR element.
If the MR element 2b near the central axis c has a resistance of the permanent magnet 7 and a resistance of the MR element 2b, the MR element 2b near the central axis c has a resistance of the MR element 2b. It is possible to apply the magnetic field H 1 of only the vertical component whose resistance value does not change, without applying the magnetic field containing the radial component that decreases the value. Therefore, the difference between the resistance values of the MR element 2a and the MR element 2b can be maximized, so that the magnitude of the output V out can be increased and the linearity with respect to the rotation angle can be optimized. When the central axis c and the MR element 2b are relatively deviated, the resistance value near the central axis c of the MR element 2b is partially reduced, so that the output is as shown by the dotted line in FIG. The linearity deteriorates a little.

又、磁界発生手段として角柱状の永久磁石7を用いて
おり、本実施例のように構成する事により、その着磁は
回転軸6aと平行な方向ですみ、着磁が容易となる。
Further, the prismatic permanent magnet 7 is used as the magnetic field generating means, and by constructing as in this embodiment, the magnetization can be done only in the direction parallel to the rotation axis 6a, and the magnetization can be facilitated.

さらに、永久磁石7はMR素子2a,2bの飽和磁界強度以
上の磁界を印加しているので、抵抗値の減少が一定とな
り、MR素子2a,2bと永久磁石7との間隔のばらつき等に
よる磁界強度の多少のばらつきに依存する事なく安定し
た出力Voutを得るという効果がある。
Further, since the permanent magnet 7 applies a magnetic field that is equal to or higher than the saturation magnetic field strength of the MR elements 2a and 2b, the decrease in resistance becomes constant, and the magnetic field due to variations in the distance between the MR elements 2a and 2b and the permanent magnet 7 is caused. This has the effect of obtaining a stable output V out without depending on the slight variation in intensity.

次に、本発明の第2実施例を第3図を用いて説明す
る。同図(a)に部分的上面図、同図(b)に同図
(a)のB−B線断面図を示す。この第2実施例が第1
実施例と相違するところは、第2実施例では、磁界発生
手段として円柱状の永久磁石7aを使用している事であ
り、本実施例においても第1実施例と同様の効果が期待
できる。本実施例にも示すように本発明でいう磁界発生
手段の形状は限定される事なく、その中心軸がMR素子に
沿って回転可能となっておればよい。又、中心軸cはMR
素子2a,2bのパターンの中心を通らなくても、そのパタ
ーンの線巾内を通っておればよい。
Next, a second embodiment of the present invention will be described with reference to FIG. Part (A) of the same figure is a partial top view, and Part (b) of the same is a sectional view taken along the line BB of Part (a). This second embodiment is the first
The difference from the embodiment is that the second embodiment uses a cylindrical permanent magnet 7a as the magnetic field generating means, and this embodiment can also be expected to have the same effect as the first embodiment. As shown in the present embodiment, the shape of the magnetic field generating means in the present invention is not limited, and its central axis may be rotatable along the MR element. Also, the central axis c is MR
The elements 2a and 2b do not have to pass through the center of the pattern, but need only pass through the line width of the pattern.

〔発明の効果〕〔The invention's effect〕

以上述べたように本発明の非接触ポジションセンサに
よれば、磁界発生手段の着磁方向が可動部の回転軸と平
行な方向ですむようになり、その着磁が容易となる。
又、回転軸方向における磁界発生手段の中心軸を、MR素
子上を通るように回転移動可能とした事により、出力の
回転角度に対する直線性をより良くする事ができるとい
う優れた効果がある。
As described above, according to the non-contact position sensor of the present invention, the magnetic field generating means can be magnetized only in the direction parallel to the rotation axis of the movable part, and the magnetization can be facilitated.
In addition, since the central axis of the magnetic field generating means in the rotation axis direction can be rotationally moved so as to pass over the MR element, there is an excellent effect that the linearity with respect to the rotation angle of the output can be improved.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)は本発明の第1実施例の断面図、第1図
(b)は同図(a)における部分的上面図、第1図
(c)は同図(b)におけるA−A線断面図、第2図は
第1実施例の出力の特性をあらわすグラフ、第3図
(a)は本発明の第2実施例の部分的上面図、第3図
(b)は同図(a)におけるB−B線断面図である。 1……絶縁基板,2a,2b……MR素子,3,4,5……電極端子,6
……可動部,6a……回転軸,7,7a……永久磁石。
1 (a) is a sectional view of the first embodiment of the present invention, FIG. 1 (b) is a partial top view of FIG. 1 (a), and FIG. 1 (c) is A in FIG. 1 (b). -A line sectional view, FIG. 2 is a graph showing the output characteristics of the first embodiment, FIG. 3 (a) is a partial top view of the second embodiment of the present invention, and FIG. 3 (b) is the same. It is the BB sectional view taken on the line in FIG. 1 ... Insulating substrate, 2a, 2b ... MR element, 3, 4, 5 ... Electrode terminal, 6
...... Movable part, 6a …… Rotary shaft, 7,7a …… Permanent magnet.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 伊澤 一朗 愛知県刈谷市昭和町1丁目1番地 日本電 装株式会社内 (72)発明者 松下 利和 愛知県刈谷市昭和町1丁目1番地 日本電 装株式会社内 (72)発明者 有賀 勝彦 愛知県刈谷市昭和町1丁目1番地 日本電 装株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Ichiro Izawa, 1-1, Showa-cho, Kariya city, Aichi Prefecture, Nihon Denso Co., Ltd. (72) Inventor, Toshikazu Matsushita, 1-1, Showa-cho, Kariya city, Aichi prefecture Co., Ltd. (72) Inventor Katsuhiko Ariga 1-1-1, Showa-cho, Kariya city, Aichi prefecture Nihon Denso Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】回転可能に設けられた可動部と、該可動部
に同心的で該可動部から所定の間隔を隔てるようにして
配設された全体的に環状となる強磁性磁気抵抗素子と、
その磁極を前記可動部の回転軸方向に指向した磁界発生
手段とを備え、 前記磁界発生手段からの磁界を、前記強磁性磁気抵抗素
子の一部には径方向に指向し、該強磁性磁気抵抗素子の
他部には垂直方向に指向し、 且つ、前記磁界発生手段を、前記回転軸方向におけるそ
の中心軸が、前記強磁性磁気抵抗素子上を通るように回
転移動可能とした事を特徴とする非接触ポジションセン
サ。
1. A movable portion rotatably provided, and a ferromagnetic magnetoresistive element which is concentric with the movable portion and which is arranged so as to be separated from the movable portion by a predetermined distance. ,
Magnetic field generating means having its magnetic poles directed in the direction of the rotation axis of the movable part, and the magnetic field from the magnetic field generating means is directed in a radial direction to a part of the ferromagnetic magnetoresistive element. It is characterized in that it is oriented vertically to the other part of the resistance element, and that the magnetic field generating means can be rotationally moved so that its central axis in the rotation axis direction passes over the ferromagnetic magnetoresistive element. Non-contact position sensor.
【請求項2】前記磁界発生手段が前記強磁性磁気抵抗素
子に印加する磁界強度の絶対値が前記強磁性磁気抵抗素
子の飽和磁界強度以上である特許請求の範囲第1項記載
の非接触ポジションセンサ。
2. The non-contact position according to claim 1, wherein the absolute value of the magnetic field strength applied to the ferromagnetic magnetoresistive element by the magnetic field generating means is equal to or higher than the saturation magnetic field strength of the ferromagnetic magnetoresistive element. Sensor.
【請求項3】前記磁界発生手段が永久磁石から成ってい
る特許請求の範囲第1項又は第2項に記載の非接触ポジ
ションセンサ。
3. The non-contact position sensor according to claim 1 or 2, wherein the magnetic field generating means comprises a permanent magnet.
JP62023195A 1986-07-29 1987-02-02 Non-contact position sensor Expired - Lifetime JPH0834141B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP62023195A JPH0834141B2 (en) 1987-02-02 1987-02-02 Non-contact position sensor
EP87110695A EP0255052B1 (en) 1986-07-29 1987-07-23 Noncontact potentiometer
DE3788831T DE3788831T2 (en) 1986-07-29 1987-07-23 Contactless potentiometer.
US07/076,891 US4835509A (en) 1986-07-29 1987-07-23 Noncontact potentiometer
KR1019870008259A KR900007100B1 (en) 1986-07-29 1987-07-29 Solid-state potentiometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62023195A JPH0834141B2 (en) 1987-02-02 1987-02-02 Non-contact position sensor

Publications (2)

Publication Number Publication Date
JPS63190392A JPS63190392A (en) 1988-08-05
JPH0834141B2 true JPH0834141B2 (en) 1996-03-29

Family

ID=12103885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62023195A Expired - Lifetime JPH0834141B2 (en) 1986-07-29 1987-02-02 Non-contact position sensor

Country Status (1)

Country Link
JP (1) JPH0834141B2 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5931879B2 (en) * 1976-11-01 1984-08-04 電気音響株式会社 potentiometer
JPS5721882A (en) * 1980-07-15 1982-02-04 Fujitsu Ltd Magnetic reluctance element

Also Published As

Publication number Publication date
JPS63190392A (en) 1988-08-05

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