JPH0834143B2 - Thick film resistor paste composition and method for producing thick film resistor - Google Patents
Thick film resistor paste composition and method for producing thick film resistorInfo
- Publication number
- JPH0834143B2 JPH0834143B2 JP2196203A JP19620390A JPH0834143B2 JP H0834143 B2 JPH0834143 B2 JP H0834143B2 JP 2196203 A JP2196203 A JP 2196203A JP 19620390 A JP19620390 A JP 19620390A JP H0834143 B2 JPH0834143 B2 JP H0834143B2
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- film resistor
- conductive
- particles
- paste composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】Detailed Description of the Invention
本発明は、高集積回路、チップ、ボリューム、高圧抵
抗体等の電子部品に使用する厚膜抵抗体組成物に関し、
更に詳しくは、抵抗値温度依存性や電流雑音が改善され
た厚膜抵抗体組成物に関する。The present invention relates to a thick film resistor composition used for electronic parts such as highly integrated circuits, chips, volumes, and high voltage resistors,
More specifically, it relates to a thick film resistor composition having improved resistance temperature dependency and current noise.
電子部品に使用する厚膜抵抗体組成物は、RuO2等の導
電性微粉末と非導電性ガラス粉末を有機ビヒクルと混練
したペーストであり、スクリーン印刷等でセラミックス
基体に塗布し、所要の温度で焼成することにより、セラ
ミック基体に抵抗体被膜を形成できるものである。 このようにして製造される厚膜抵抗体の重要な特性と
して、抵抗値の温度係数(TCR)と電流雑音(ノイズ)
が挙げられる。 通常、TCRは25℃での抵抗値を基準として、次式で示
すように低温度(−55℃)と高温(125℃)での抵抗値
の変化率を1℃当りの値(ppm/℃)で示し、それぞれ冷
時または低温温度係数(CTCR)、熱時または高温温度計
数(HTCR)と呼ばれている。TCRは0ppm/℃となることが
望ましい。 但し、R-55:−55℃における抵抗値(Ω/□) R25:25℃における抵抗値(Ω/□) R125:125℃における抵抗値(Ω/□) 一方ノイズは厚膜抵抗体内部に発生する電流雑音であ
り、Quan Techノイズメーターで測定されるが、出来る
だけ小さい値となることが望ましい。 TCRを0に近づけるために、従来より種々の無機化合
物を添加して厚膜抵抗体を改良する試みがなされてき
た。例えば、特開昭48−82391号公報、特公昭55−39883
号公報、特公昭54−1917号公報、特開昭47−8579号公
報、特公昭57−26401号公報では、Nb2O5、TiO2、MnO2、
Sb2O3等の負のTCR調整剤やCuOの正のTCR調整剤を添加物
として用いている。 また、面積抵抗値(Ω/□)が高い厚膜抵抗体を形成
するためのペースト組成物を得るには導電性微粉末の割
合を低くする必要があるが、逆にノイズを増大させるこ
とになる。このため、特開昭48−82391号公報や特開昭4
7−8579号公報にあるようにNb2O5、Sb2O3等を添加して
導電性微粉末の割合を高く維持したまま面積抵抗値を増
加させる方法がとられていたが、TCRを負にさせる作用
が大きく問題があった。The thick film resistor composition used for electronic parts is a paste in which conductive fine powder such as RuO 2 and non-conductive glass powder are kneaded with an organic vehicle, and is applied to a ceramic substrate by screen printing, etc. By firing with, the resistor coating can be formed on the ceramic substrate. The important characteristics of the thick film resistor manufactured in this way are temperature coefficient of resistance (TCR) and current noise (noise).
Is mentioned. Normally, TCR is based on the resistance value at 25 ℃, and the rate of change of resistance value at low temperature (−55 ℃) and high temperature (125 ℃) is calculated as the value per 1 ℃ (ppm / ℃). ), Which are called cold or low temperature coefficient (CTCR) and hot or high temperature coefficient (HTCR), respectively. TCR should be 0ppm / ℃. However, R -55 : Resistance value at -55 ℃ (Ω / □) R 25 : Resistance value at 25 ℃ (Ω / □) R 125 : Resistance value at 125 ℃ (Ω / □) On the other hand, noise is a thick film resistor This is the current noise that is generated internally, and it is measured with a Quan Tech noise meter, but it is desirable that it be as small as possible. In order to bring the TCR close to 0, various attempts have conventionally been made to improve the thick film resistor by adding various inorganic compounds. For example, JP-A-48-82391 and JP-B-55-39883.
JP-B No. 54-1917, JP-B No. 47-8579, JP-B No. 57-26401, Nb 2 O 5 , TiO 2 , MnO 2 ,
Negative TCR modifiers such as Sb 2 O 3 and positive TCR modifiers of CuO are used as additives. Further, in order to obtain a paste composition for forming a thick film resistor having a high sheet resistance value (Ω / □), it is necessary to reduce the proportion of conductive fine powder, but conversely to increase noise. Become. Therefore, JP-A-48-82391 and JP-A-4-82391
7-8579 Patent Nb 2 O 5 as in JP, Sb 2 O 3 and a method of increasing the area resistance value while maintaining a high percentage of conductive fine powder was added had been taken, but the TCR There was a big problem in the action of making it negative.
上記問題点を解決するために、本発明の目的はTCRが
0に近く、ノイズが小さい厚膜抵抗体を形成するための
ペースト組成物を提供することにある。In order to solve the above problems, it is an object of the present invention to provide a paste composition for forming a thick film resistor having a TCR close to 0 and low noise.
本発明は、上記目的を達成するため、本質的に、有機
ビヒクルと、導電物と、非導電性ガラスと、前記導電物
および非導電性ガラスの合計重量に対して5重量%以下
のTa2O5とからなる厚膜抵抗体組成物を提供する。 言い換えると、本発明は、有機ビヒクルと、導電物お
よび非導電性ガラスを含有する厚膜抵抗ペースト中にTa
2O5が含有されており、その量が導電物および非導電性
ガラスの合計重量に対して5重量%以下である点に特徴
がある。In order to achieve the above-mentioned object, the present invention essentially comprises an organic vehicle, a conductive material, a non-conductive glass, and 5 wt% or less of Ta 2 with respect to the total weight of the conductive material and the non-conductive glass. A thick film resistor composition comprising O 5 is provided. In other words, the present invention provides Ta film in a thick film resistor paste containing an organic vehicle and a conductive material and a non-conductive glass.
It is characterized in that it contains 2 O 5 and its amount is 5% by weight or less based on the total weight of the conductive material and the non-conductive glass.
本発明で使用するTa2O5の量は、導電物および非導電
性ガラスの合計重量に対して5重量%以下としなければ
ならない。Ta2O5の量が5重量%より多い場合には、Ta2
O5の量を増加したことによる厚膜抵抗体組成物の面積抵
抗値の増加が望めないだけでなく、ノイズを増大させる
ので良くない。 本発明におけるTa2O5は、粒径1μm以下のものが好
適である。 導電物としては、Pb2Ru2O6〜7、Bi2Ru2O6〜7、Ru
O2等を挙げることができ、粒径0.2μm以下のものが望
ましい。 非導電性ガラスとしては、PbO−SiO2−B2O3−Al2O3系
が好適で、粒径が10μm以下、望ましくは5μm以下の
ものが良い。又、通常の添加剤(TCR調整剤)であるMnO
2、Nb2O5、Sb2O3、CuO等を併用しても何ら差し支えな
い。本発明の厚膜抵抗体組成物を得るには、従来の厚膜
抵抗体組成物に使用される通常の方法に従って行えばよ
い。The amount of Ta 2 O 5 used in the present invention must be 5% by weight or less based on the total weight of the conductive material and the nonconductive glass. If the amount of Ta 2 O 5 is more than 5% by weight, Ta 2
Not only is it not possible to expect an increase in the sheet resistance of the thick film resistor composition due to the increase in the amount of O 5 , but it is also not preferable because it increases noise. Ta 2 O 5 in the present invention preferably has a particle size of 1 μm or less. As the conductive material, Pb 2 Ru 2 O 6 to 7 , Bi 2 Ru 2 O 6 to 7 , Ru
O 2 and the like can be mentioned, and those having a particle size of 0.2 μm or less are desirable. As electrically non-conducting glass, PbO-SiO 2 -B 2 O 3 -Al 2 O 3 system is preferably a particle diameter of 10μm or less, preferably following can be 5 [mu] m. In addition, MnO which is an ordinary additive (TCR adjuster)
2 , Nb 2 O 5 , Sb 2 O 3 , CuO, etc. may be used in combination without any problem. To obtain the thick film resistor composition of the present invention, the conventional method used for conventional thick film resistor compositions may be used.
[実施例1〜5] エチルセルロースとターピネオールからなる有機ビヒ
クルと、粒径500〜1000Åのパイロクロア型酸化物であ
るPb2Ru2O6〜7と、平均粒径2〜3μmのPbO(53重量
%)−SiO2(32重量%)−B2O3(10重量%)−Al2O
3(5重量%)ガラスと、粒径1μm以下のTa2O5および
Nb2O5、Sb2O3、MnO2、CuOとを添加し、スリーロールミ
ルで充分混練して、第1表に示す5種類の本発明による
抵抗ペーストを製造した。 これらの抵抗ペーストを96%アルミナ基板にスクリー
ン印刷し、150℃で乾燥後、ベルト炉でピーク850℃×10
分、全焼成時間30分の条件で焼成し、サイズ1mm×1mm、
膜厚10〜14μmの厚膜抵抗体を作成した。これら抵抗体
の特性の評価結果を第1表に示した。なお、抵抗体の面
積抵抗値は、およそ100kΩになるように抵抗ペーストを
調整した。 [比較例1〜5] 比較例のために、実施例と同様にして、第1表に示す
5種類の抵抗ペーストを製造し、厚膜抵抗体を作成し
た。これら抵抗体の組成と特性の評価結果も第1表に示
した。 第1表から明らかなように、本発明の厚膜抵抗体組成
物はTCRが高温、低温共に0に近く且つノイズが極めて
少い。Examples 1 to 5 Organic vehicle composed of ethyl cellulose and terpineol, Pb 2 Ru 2 O 6 to 7 which is a pyrochlore type oxide having a particle size of 500 to 1000Å, and PbO having an average particle size of 2 to 3 μm (53% by weight). ) -SiO 2 (32 wt%) - B 2 O 3 ( 10 wt%) - Al 2 O
3 (5% by weight) glass, Ta 2 O 5 with a particle size of 1 μm or less, and
Nb 2 O 5 , Sb 2 O 3 , MnO 2 and CuO were added and sufficiently kneaded in a three-roll mill to manufacture five types of resistance pastes according to the present invention shown in Table 1. These resistance pastes were screen-printed on a 96% alumina substrate, dried at 150 ° C, and then peaked at 850 ° C x 10 in a belt furnace.
Min, baking under conditions of a total baking time of 30 minutes, size 1 mm × 1 mm,
A thick film resistor having a film thickness of 10 to 14 μm was prepared. The evaluation results of the characteristics of these resistors are shown in Table 1. The resistance paste was adjusted so that the sheet resistance of the resistor was about 100 kΩ. [Comparative Examples 1 to 5] For Comparative Examples, five types of resistance pastes shown in Table 1 were manufactured in the same manner as in Examples to prepare thick film resistors. Table 1 also shows the evaluation results of the composition and characteristics of these resistors. As is clear from Table 1, the thick film resistor composition of the present invention has a TCR close to 0 at both high temperature and low temperature and very little noise.
【発明の効果】 本発明の厚膜抵抗体組成物は、抵抗値温度依存性の指
数であるTCRが0に近く且つ電流雑音(ノイズ)も極め
て少いので、抵抗体としての効果は極めて大である。EFFECTS OF THE INVENTION The thick film resistor composition of the present invention has a TCR, which is an index of temperature dependency of resistance value, close to 0 and has very little current noise, and therefore has an extremely large effect as a resistor. Is.
Claims (2)
u2O6-7およびBi2Ru2O7からなる群より選ばれた1種以上
の導電物粒子と、PbOおよびSiO2を主成分とする非導電
性ガラス粒子と、前記導電物粒子および非導電性ガラス
粒子の合計重量に対して5重量%以下のTa2O5粒子とか
らなる厚膜抵抗体用ペースト組成物。1. Essentially an organic vehicle and RuO 2 , Pb 2 R
one or more conductive particles selected from the group consisting of u 2 O 6-7 and Bi 2 Ru 2 O 7, non-conductive glass particles containing PbO and SiO 2 as main components, and the conductive particles and A paste composition for a thick film resistor, comprising 5 wt% or less of Ta 2 O 5 particles based on the total weight of non-conductive glass particles.
u2O6-7およびBi2Ru2O7からなる群より選ばれた1種以上
の導電物粒子と、PbOおよびSiO2を主成分とする非導電
性ガラス粒子と、前記導電物粒子および非導電性ガラス
粒子の合計重量に対して5重量%以下のTa2O5粒子とか
らなるペーストを作成し、該ペーストを焼成して厚膜抵
抗体とする厚膜抵抗体の製法。2. Essentially an organic vehicle and RuO 2 , Pb 2 R
one or more conductive particles selected from the group consisting of u 2 O 6-7 and Bi 2 Ru 2 O 7, non-conductive glass particles containing PbO and SiO 2 as main components, and the conductive particles and A method for producing a thick film resistor, in which a paste composed of 5 wt% or less of Ta 2 O 5 particles based on the total weight of non-conductive glass particles is prepared and the paste is fired to form a thick film resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196203A JPH0834143B2 (en) | 1990-07-26 | 1990-07-26 | Thick film resistor paste composition and method for producing thick film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2196203A JPH0834143B2 (en) | 1990-07-26 | 1990-07-26 | Thick film resistor paste composition and method for producing thick film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0483305A JPH0483305A (en) | 1992-03-17 |
| JPH0834143B2 true JPH0834143B2 (en) | 1996-03-29 |
Family
ID=16353913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2196203A Expired - Lifetime JPH0834143B2 (en) | 1990-07-26 | 1990-07-26 | Thick film resistor paste composition and method for producing thick film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0834143B2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5444120B2 (en) * | 1973-02-28 | 1979-12-24 | ||
| JPS5444117B2 (en) * | 1973-02-28 | 1979-12-24 | ||
| JPH0695483B2 (en) * | 1985-10-07 | 1994-11-24 | 株式会社村田製作所 | Resistance composition |
-
1990
- 1990-07-26 JP JP2196203A patent/JPH0834143B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0483305A (en) | 1992-03-17 |
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