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JPH083883B2 - Thin film magnetic head - Google Patents
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JPH083883B2 - Thin film magnetic head - Google Patents

Thin film magnetic head

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Publication number
JPH083883B2
JPH083883B2 JP62146058A JP14605887A JPH083883B2 JP H083883 B2 JPH083883 B2 JP H083883B2 JP 62146058 A JP62146058 A JP 62146058A JP 14605887 A JP14605887 A JP 14605887A JP H083883 B2 JPH083883 B2 JP H083883B2
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JP
Japan
Prior art keywords
magnetic
film
alloy
conife
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62146058A
Other languages
Japanese (ja)
Other versions
JPS63311613A (en
Inventor
尊雄 今川
雅章 佐野
勝也 光岡
真治 成重
浩一 西岡
雅信 華園
哲夫 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
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Publication date
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Priority to JP62146058A priority Critical patent/JPH083883B2/en
Publication of JPS63311613A publication Critical patent/JPS63311613A/en
Publication of JPH083883B2 publication Critical patent/JPH083883B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高密度磁気記録に適する薄膜磁気ヘツドに
係り、特に書込特性のよい薄膜磁気ヘツドに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film magnetic head suitable for high density magnetic recording, and more particularly to a thin film magnetic head having good writing characteristics.

〔従来の技術〕[Conventional technology]

薄膜磁気ヘツドは、半導体プロセスにより基板上に形
成したコイル,絶縁層,磁極から構成される。すなわ
ち、薄膜磁気ヘツドの縦断面構成を示した第2図のよう
に、下部磁性膜層1上に絶縁層2が積層されている。こ
の絶縁層2上には、複数のコイル5を内蔵する絶縁層3
が積層されている。この絶縁層3上には、上部磁性膜層
6が積層されている。薄膜磁気ヘツド磁極に適用される
磁性膜としては、厚さ1〜2μmのNi81Fe19(パーマロ
イ)合金が一般的に用いられている。パーマロイは、磁
歪定数λsが小さく、一軸異方性の付与が容易で困難軸
方向保磁力HCHを1エルステツド以下とすることがで
き、しかも化学的、熱的安定性がよい利点がある。一
方、パーマロイの飽和磁束密度BSは約10000ガウスであ
り、薄膜磁気ヘツド磁極厚さを減少させて、記録密度を
上昇させるには限界があつた。すなわち、第2図に示す
薄膜磁気ヘツド下部磁性膜厚1および上部磁性膜層6の
厚さtg1およびtg2を減少させることにより、書込磁界9
の空間分布を急峻にし、記録媒体12に書き込まれる記録
ビツト11の長さを短かくすることで記録密度の増大が可
能であるが、書込磁界強度は低下する。これを補うた
め、コイル5に流す電流を増加させるが、パーマロイは
前述のごとくBSが低く磁極が飽和して、書込磁界が十分
発生しない。したがつて、磁極部分に飽和磁束密度の高
い非晶質Co系合金(BS=13000〜15000ガウス)、結晶質
Fe系合金(BS=18000〜21000ガウス)等を適用すること
が考えられる。しかし、非晶質Co系合金は熱安定性に問
題があり、また結晶質Fe系合金は耐食性に問題があり、
これらの問題は未だ解決されていない。
The thin film magnetic head is composed of a coil, an insulating layer and a magnetic pole formed on a substrate by a semiconductor process. That is, as shown in FIG. 2 showing the vertical cross-sectional structure of the thin film magnetic head, the insulating layer 2 is laminated on the lower magnetic film layer 1. An insulating layer 3 containing a plurality of coils 5 is formed on the insulating layer 2.
Are stacked. An upper magnetic film layer 6 is laminated on the insulating layer 3. As the magnetic film applied to the thin film magnetic head magnetic pole, a Ni 81 Fe 19 (permalloy) alloy having a thickness of 1 to 2 μm is generally used. Permalloy has the advantages that it has a small magnetostriction constant λs, it is easy to impart uniaxial anisotropy, the coercive force H CH in the difficult axial direction can be set to 1 oersted or less, and the chemical and thermal stability are good. On the other hand, the saturation magnetic flux density B S of permalloy is about 10,000 gauss, and there is a limit to decrease the thickness of the thin film magnetic head magnetic pole and increase the recording density. That is, the write magnetic field 9 is reduced by reducing the thickness t g1 and t g2 of the lower magnetic film thickness 1 and the upper magnetic film layer 6 of the thin film magnetic head shown in FIG.
The recording density can be increased by making the spatial distribution of the recording medium sharp and the length of the recording bit 11 written on the recording medium 12 short, but the writing magnetic field strength decreases. To compensate for this, the current flowing through the coil 5 is increased, but in Permalloy, as described above, B S is low and the magnetic pole is saturated, so that the write magnetic field is not sufficiently generated. Was but connexion, high saturation magnetic flux density in the magnetic pole portions amorphous Co-based alloy (B S = 13000~15000 gauss), crystalline
It is conceivable to apply the Fe-based alloy (B S = 18000~21000 gauss) or the like. However, amorphous Co-based alloys have problems with thermal stability, and crystalline Fe-based alloys have problems with corrosion resistance.
These issues have not yet been resolved.

フエロマグネテイズム(ホゾルス著、フアンノストラ
ンド出版,1951年)(Feromagnetism,R.M.Bozorth,Van N
ostrand1951)165頁および675頁によれば、Co−Fe−Ni
三元系状態図におけるCo主成分領域において、磁歪定数
がほぼ零、かつ飽和磁束密度12000ガウス以上の領域が
存在することが明らかである。しかし、この領域の合金
系は、磁気異方性定数K1が大きく(〜104erg/cm3)、当
該合金をそのまま磁気ヘツド磁極として用いても、透磁
率が低く実用とならない。従来より、透磁率を高めるた
め、例えばアイ・イー・イー・イー トランザクシヨン
・オン・マグネテイクス エム・エー・ジー13,1521(1
977年)IEEE,Trans.Magn.MAG−13,1521(1977)に示さ
れるごとく、パーマロイとAl2O3等の誘電体を用い多層
膜とし、数10μm幅の短冊状に加工することにより、高
周波領域での誘磁率が増大することは知られている。こ
れは、高周波励磁時、パーマロイ内に発生する渦電流に
よるエネルギー損失が、薄膜化と短冊状加工という次元
形状の限定によつて減少することによる。したがつて、
本質的に異方性の大きいCoNiFe系金属は、そのまま多層
化しても誘磁率は向上しない。一方、アイ・イー・イー
・イー トランザクシヨン オブ マグネテイクス エ
ム・エー・ジー166頁(1961年)、IEEE,Trans.Magn.MAG
−1,66,(1961)によれば、パーマロイの蒸着中、互い
に直交し、交番する磁界を基板に印加することにより、
パーマロイの一軸異方性定数を制御し得ることが知られ
ている。これを、CoNiFe合金の電着法による形状に適用
した例が、特開昭61−76642号公報に開示されている。
この従来例によれば、CoNiFeの合金の異方性磁界HKは約
1/6に低減される。
Feromagnetism (RMBozorth, Van N, by Hosors, published by Juan Nostrand, 1951)
ostrand1951) pp. 165 and 675, Co-Fe-Ni
It is clear that there is a region where the magnetostriction constant is almost zero and the saturation magnetic flux density is 12000 Gauss or more in the Co main component region in the ternary phase diagram. However, the alloy system in this region has a large magnetic anisotropy constant K 1 (up to 10 4 erg / cm 3 ), and even if the alloy is used as it is as a magnetic head magnetic pole, the magnetic permeability is low and it is not practical. Conventionally, in order to increase the magnetic permeability, for example, I E E E Transaction on Magnetics MGS 13,1521 (1
977) As shown in IEEE, Trans.Magn.MAG-13,1521 (1977), by using a dielectric material such as Permalloy and Al 2 O 3 to form a multilayer film, and processing it into a strip shape with a width of several 10 μm, It is known that the magnetic susceptibility increases in the high frequency range. This is because the energy loss due to the eddy current generated in the permalloy at the time of high frequency excitation is reduced due to the limitation of the dimensional shape such as thinning and strip processing. Therefore,
A CoNiFe-based metal, which is essentially anisotropic, does not improve the magnetic susceptibility even if it is multilayered as it is. On the other hand, I.E.E.Transaction of Magnetics M.A.G. 166 (1961), IEEE, Trans.Magn.MAG
According to -1,66, (1961), by applying alternating and alternating magnetic fields to the substrate during the deposition of permalloy,
It is known that the uniaxial anisotropy constant of permalloy can be controlled. An example in which this is applied to a shape of a CoNiFe alloy by an electrodeposition method is disclosed in JP-A-61-76642.
According to this conventional example, the anisotropic magnetic field H K of the CoNiFe alloy is about
It is reduced to 1/6.

また、CoNiFe合金を真空蒸着等の方法により形成する
ことが、特公昭60−82638号公報に開示されている。
Also, forming a CoNiFe alloy by a method such as vacuum deposition is disclosed in Japanese Patent Publication No. 60-82638.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

しかし、上記特開昭61−76642号公報に記載された従
来例では、電着法により形成された磁性膜は、薄膜磁気
ヘツド形成プロセス中に膜が受ける熱処理により磁気特
性が劣化することにより、保磁力が増大する難点があ
る。
However, in the conventional example described in the above-mentioned JP-A-61-76642, the magnetic film formed by the electrodeposition method is deteriorated in magnetic characteristics by the heat treatment that the film receives during the thin film magnetic head forming process. There is a drawback that the coercive force increases.

また、特公昭60−82638号公報記載の形成条件である
基板温度350℃、膜推積速度18Å/秒では、飽和磁束密
度の高い高Co領域、すなわちCo濃度70重量%以上の合金
の保磁力を低下させることはできない。
Further, when the substrate temperature is 350 ° C. and the film deposition rate is 18 Å / sec, which are the formation conditions described in Japanese Patent Publication No. Sho 62-82638, the coercive force of a high Co region having a high saturation magnetic flux density, that is, an alloy having a Co concentration of 70 wt% or more Can not be lowered.

すなわち、上記従来技術では、高飽和磁束密度を有す
るCoFeまたはCoNiFe合金が高透磁率すなわち保磁力が小
さく形成される点について考慮されておらず、これらの
合金を薄膜磁気ヘツド用磁極として用いるには難点があ
つた。
That is, in the above-mentioned prior art, CoFe or CoNiFe alloy having a high saturation magnetic flux density is not considered in terms of high permeability, that is, a small coercive force is formed, and to use these alloys as a magnetic pole for a thin film magnetic head, There were difficulties.

このような問題点を解決するために、本発明は、上記
CoFeまたはCoNiFe合金が保磁力を小さく形成されてな
り、再生特性のよい薄膜磁気ヘツドを提供することを目
的とする。
In order to solve such problems, the present invention provides the above
It is an object of the present invention to provide a thin film magnetic head having good reproduction characteristics, which is formed of CoFe or CoNiFe alloy having a small coercive force.

〔問題点を解決するための手段〕[Means for solving problems]

問題点を解決するための手段について述べる前に、本
発明を完成するに至つた経緯について説明する。
Before describing the means for solving the problems, the background of the completion of the present invention will be described.

耐熱性のよい磁性薄膜を実現する手段として、スパツ
タリング法が知られている。本発明者らは、Co濃度70%
以上のCoNiFe合金をカソードとして、ガラス基板上への
スパツタリング膜形成を試みた。その結果、薄膜磁気ヘ
ツド磁極に適用される、厚さ約1μm程度のスパツタリ
ング膜は、合金組成を変化させ、またはスパツタリング
電力、Arガス圧を変化させても保磁力Hcは300eと大き
く、膜には一軸磁気異方性も誘起されなかつた。しか
し、スパツタリング膜厚を減少させた場合は、困難軸方
向保磁力HCHは、0.5μm以下で急激に低下することがわ
かつた。また、スパツタリング時の基板温度を膜表面で
100℃以下に保つことにより、1〜1.5μmの膜厚でも困
難軸方向保磁力を20e以下とすることができた。
The sputtering method is known as a means for realizing a magnetic thin film having good heat resistance. We have a Co concentration of 70%
An attempt was made to form a sputtering film on a glass substrate using the above CoNiFe alloy as a cathode. As a result, the spattering film with a thickness of about 1 μm applied to the thin film magnetic head magnetic pole has a large coercive force Hc of 300e even if the alloy composition is changed or the spattering power and Ar gas pressure are changed. No uniaxial magnetic anisotropy was also induced. However, it was found that the coercive force H CH in the hard axis direction sharply drops below 0.5 μm when the sputtering film thickness is reduced. Also, the substrate temperature at the time of spattering can be controlled by the film surface.
By keeping the temperature below 100 ° C., the coercive force in the difficult axis direction could be reduced to 20 e or less even with a film thickness of 1 to 1.5 μm.

すなわち、基板温度を低く保ち形成した合金膜あるい
は膜厚の小さい膜では、その平均結晶粒径を0.06μm以
下とすることができる。その結果、困難軸方向保磁力が
低下したものと考えられる。
That is, in the alloy film or the film having a small film thickness formed by keeping the substrate temperature low, the average crystal grain size can be 0.06 μm or less. As a result, it is considered that the coercive force in the hard axis direction was lowered.

本発明は、かかる知見によりなされたものであり、そ
の内容は、基板上に第1の絶縁層を有し、当該絶縁層上
に下部磁性膜層、第2の絶縁層および上部磁性膜層が順
に積層され、下部および上部磁性膜層が一部分で接しか
つ同部分を巻回するコイルを第2の絶縁層内に有する薄
膜磁気ヘツドにおいて、前記磁性膜層の一部または全部
は磁性合金であるCoFeまたはCoNiFeからなり、当該磁性
合金の結晶粒径の平均値が0.06μm以下であることを特
徴とする薄膜磁気ヘツドである。
The present invention has been made based on such knowledge, and the content thereof is that a first insulating layer is provided on a substrate, and a lower magnetic film layer, a second insulating layer and an upper magnetic film layer are provided on the insulating layer. In a thin-film magnetic head having a coil in which the lower and upper magnetic film layers are in contact with each other at one portion and winding the same portion in a second insulating layer, a part or all of the magnetic film layer is a magnetic alloy. A thin-film magnetic head made of CoFe or CoNiFe, wherein the average grain size of the magnetic alloy is 0.06 μm or less.

上記本発明において、磁性合金の結晶粒径の平均値を
0.06μm以下にする方法として、例えば次の方法があ
る。まず、磁性合金層をスパツタリング法により形成
し、膜作成時の基板温度を100℃以下とする方法があ
る。その他、磁性合金層厚さを0.5μm以下とし、磁性
合金層間に別な金属の合金,誘電体を挟み込み、多層化
する方法である。
In the present invention, the average value of the crystal grain size of the magnetic alloy is
The following methods are available as methods for reducing the thickness to 0.06 μm or less. First, there is a method in which a magnetic alloy layer is formed by a sputtering method and the substrate temperature during film formation is set to 100 ° C. or lower. In addition, the thickness of the magnetic alloy layer is 0.5 μm or less, and another metal alloy or dielectric is sandwiched between the magnetic alloy layers to form a multilayer structure.

この方法により、低保磁力で厚いCoNiFe合金膜が得ら
れることがわかつた。この方法は、基板が冷却できない
量産形のスパツタリング装置を用いた、CoNiFe膜の形成
に有利である。
It was found that a thick CoNiFe alloy film with a low coercive force can be obtained by this method. This method is advantageous for forming a CoNiFe film by using a mass-production type sputtering device in which the substrate cannot be cooled.

上記本発明におけるCoNiFe合金またはCoFe磁性合金の
組成は、Co100-X-F-YNiXFeYと表記したとき、0≦x≦2
0かつ≦y≦10である。
The composition of the CoNiFe alloy or the CoFe magnetic alloy in the present invention is 0 ≦ x ≦ 2 when expressed as Co 100-XFY Ni X Fe Y.
0 and ≦ y ≦ 10.

〔作用〕[Action]

CoNiFeまたはCoFe磁性合金層の平均結晶粒径を保磁力
との関係を第1図に示し、基板温度と磁性合金層の平均
結晶粒径との関係を第3図に示し、磁性合金層の膜厚と
保磁力との関係を第4図に示す。
The relationship between the average crystal grain size of the CoNiFe or CoFe magnetic alloy layer and the coercive force is shown in FIG. 1, and the relation between the substrate temperature and the average crystal grain size of the magnetic alloy layer is shown in FIG. The relationship between thickness and coercive force is shown in FIG.

第1図からわかるように、結晶粒径が0.06μm以下の
とき、保磁力を大幅に低下することができる。結晶粒径
を0.06μm以下にすることにより、磁性合金膜の保磁力
が低下する理由について説明する。
As can be seen from FIG. 1, the coercive force can be significantly reduced when the crystal grain size is 0.06 μm or less. The reason why the coercive force of the magnetic alloy film is lowered by setting the crystal grain size to 0.06 μm or less will be described.

多結晶磁性合金の磁化は、平均容易軸方向に沿つて結
晶物ごとにばらついた微小な磁化の和であることが知ら
れている。この合金の平均磁化方向を回転させるため、
外部磁界を印加したとき、個々の結晶粒は、その結晶方
位により安定していた磁化を、よりエネルギーの高い方
向へ向けることになる。この回転のしやすさを表わすの
が、結晶磁気異方性エネルギーK1であり、高Co濃度のCo
NiFeまたは、CoFe合金のK1は104〜105erg/cm3とパーマ
ロイ(102erg/cm3)の100〜1000倍である。粗大な結晶
粒を、それと同体積の微細な結晶粒では、各結晶粒間の
結晶方位が異なるため、磁気異方性エネルギーが低下す
る。すなわち、結晶物径がより微細であるほど、個々の
結晶磁気異方性は小さくなる。このことが細かい結晶粒
径のCoNiFeまたはCoFe膜でのみ低い困難軸方向保磁力を
実現できる理由と考えられる。
It is known that the magnetization of a polycrystalline magnetic alloy is the sum of minute magnetizations that vary for each crystal substance along the average easy axis direction. To rotate the average magnetization direction of this alloy,
When an external magnetic field is applied, the individual crystal grains turn their stable magnetization due to their crystal orientation to a direction with higher energy. This easiness of rotation is expressed by the magnetocrystalline anisotropy energy K 1, which is a high Co concentration Co.
The K 1 of NiFe or CoFe alloy is 10 4 to 10 5 erg / cm 3 and 100 to 1000 times that of permalloy (10 2 erg / cm 3 ). In a coarse crystal grain and a fine crystal grain having the same volume as that of the coarse crystal grain, the crystal orientations between the crystal grains are different, so that the magnetic anisotropy energy is lowered. That is, the finer the crystallite diameter, the smaller the individual magnetocrystalline anisotropy. It is considered that this is the reason why a low coercive force in the hard axis direction can be realized only with a CoNiFe or CoFe film having a small crystal grain size.

平均結晶粒径を0.06μm以下とすることにより耐熱性
が向上し、その結果、薄膜磁気ヘツド形成プロセス中、
膜が受ける熱処理により磁性特性が劣化することなく、
保磁力が増大することもない。これは、平均結晶粒径が
十分小さいと、粒成長しないからである。
By setting the average crystal grain size to 0.06 μm or less, heat resistance is improved. As a result, during the thin film magnetic head forming process,
The magnetic properties do not deteriorate due to the heat treatment that the film receives,
The coercive force does not increase. This is because grain growth does not occur if the average crystal grain size is sufficiently small.

次に、基板温度と平均結晶粒径との関係については、
第3図に示すように、基板温度が低く(100℃以下)保
たれて形成された合金膜では、その平均結晶粒径が0.06
μm以下となつていることがわかる。
Next, regarding the relationship between the substrate temperature and the average crystal grain size,
As shown in FIG. 3, in the alloy film formed while the substrate temperature was kept low (100 ° C. or less), the average crystal grain size was 0.06
It can be seen that the thickness is less than μm.

次に、膜厚と保磁力の関係については、第4図に示す
ように、膜厚が0.5μm以下で、保磁力が小さいことが
わかる。これは、次の理由による。高い基板温度で、厚
いCoNiFe合金膜を形成した場合、その膜厚方向の結晶粒
径は、基板側が細かく、膜表面に向つて粗大化している
ことがわかつた。そこで、第4図に示した膜厚と保磁力
の関係から、膜厚を0.5μm以下とすればよい。この場
合、磁性合金層間に別な金属,合金,誘電体を挟み込
み、多層膜化できる。多層膜とするこで保磁力が低下す
るのも、CoNiFe結晶粒の成長を別な層によつて断ち切る
ことにより、磁性層結晶粒径を0.06μm以下としている
効果によると考えられる。
Next, regarding the relationship between the film thickness and the coercive force, as shown in FIG. 4, it can be seen that the coercive force is small when the film thickness is 0.5 μm or less. This is for the following reason. It was found that when a thick CoNiFe alloy film was formed at a high substrate temperature, the crystal grain size in the film thickness direction was fine on the substrate side and coarsened toward the film surface. Therefore, from the relationship between the film thickness and the coercive force shown in FIG. 4, the film thickness may be set to 0.5 μm or less. In this case, another metal, alloy, or dielectric can be sandwiched between the magnetic alloy layers to form a multilayer film. The reason why the coercive force is lowered by forming a multilayer film is considered to be due to the effect that the grain size of the magnetic layer is made 0.06 μm or less by cutting off the growth of CoNiFe crystal grains by another layer.

〔実施例〕〔Example〕

以下、本発明の実施例について説明する。第1表に、
CoNiFe合金のスパツタリング条件を示す。
Examples of the present invention will be described below. In Table 1,
The sputtering conditions for CoNiFe alloys are shown below.

上記条件で形成したCoNiFeスパツタリング膜を第1層
とし、NiFe,Al2O3およびSiO2を第2層として積層膜を形
成し、その磁気特性を各膜厚と各第2表に示す。
The CoNiFe sputtering film formed under the above conditions was used as the first layer, and NiFe, Al 2 O 3 and SiO 2 were used as the second layer to form a laminated film, and the magnetic properties thereof are shown in each film thickness and each table.

表中、NiFe,Al2O3,SiO2は、いずれもCoNiFeと同一ス
パツタ装置内で、別なカソードを用い、スパツタリング
した。この条件を、第3表に示す。
In the table, NiFe, Al 2 O 3 and SiO 2 were all sputtered in the same sputtering device as CoNiFe using another cathode. This condition is shown in Table 3.

本実施例によけば、飽和磁束密度がパーマロイ(1000
0ガウス)より大きく、かつ保磁力の小さいCoNiFe多層
膜が得られた。
According to this embodiment, the saturation magnetic flux density is 1000 permalloy.
CoNiFe multi-layer film with a coercive force larger than 0 Gauss) and a small coercive force was obtained.

本発明の他の実施例について説明する。第1表に示し
た条件で、基板を水冷しスパツタリングしたところ、第
4表に示す結果を得た。このときの基板温度は、50〜60
℃であつた。
Another embodiment of the present invention will be described. When the substrate was water-cooled and sputtered under the conditions shown in Table 1, the results shown in Table 4 were obtained. The substrate temperature at this time is 50-60
It was ℃.

この実施例によれば、膜厚が0.5μm以下で、保磁力
が小さいことがわかる。
According to this example, it is found that the film thickness is 0.5 μm or less and the coercive force is small.

また、本発明の第3の実施例について説明する。Further, a third embodiment of the present invention will be described.

第1表により形成したCoNiFe合金(層厚0.1μm)とA
l2O3(層厚0.01μm)多層膜(膜厚1.1μm)を磁極と
して用い、第2図に示す構造の薄膜磁気ヘツドを作製
し、一方パーマロイ(膜厚1.1μm)を用いた薄膜磁気
ヘツドを作製し、両者の記録、再生特性を比較した。記
録媒体には、γ−Fe2O3膜を用いた。多層膜を用い作製
した薄膜磁気ヘツドは、パーマロイ使用のものに比べ記
録後再生出力は約1.3倍となつた。本実施例により、磁
極厚を減少させることにより、分解能を高めた薄膜磁気
ヘツドを作製できることがわかる。
CoNiFe alloy (layer thickness 0.1μm) and A formed according to Table 1
l 2 with O 3 (the layer thickness 0.01 [mu] m) multilayer film (thickness 1.1 .mu.m) as the magnetic pole, and a thin film magnetic head having the structure shown in FIG. 2, whereas the thin-film magnetic using permalloy (thickness 1.1 .mu.m) Heads were prepared and their recording and reproducing characteristics were compared. A γ-Fe 2 O 3 film was used as the recording medium. The thin-film magnetic head manufactured using the multi-layer film has a reproduction output after recording of about 1.3 times that of the one using Permalloy. It can be seen from this example that a thin film magnetic head with improved resolution can be manufactured by reducing the magnetic pole thickness.

さらに、本発明の第4の実施例について説明する。第
1表によるCoNiFe合金作製時、基板に対し互いに直交す
る方向に順に磁界を印加し、成膜を行つた。第5表に条
件を示す。
Further, a fourth embodiment of the present invention will be described. When the CoNiFe alloy according to Table 1 was produced, magnetic fields were sequentially applied to the substrate in directions orthogonal to each other to form a film. The conditions are shown in Table 5.

このスイツチング磁界中スパツタリングによりCoNiFe
の合金の異方性磁界を20エルステツドから12エルステツ
ドへ減少することができ、膜単体の透磁率を向上させる
ことができる。
By this sputtering in the switching magnetic field, CoNiFe
The anisotropic magnetic field of the alloy can be reduced from 20 to 12 ersted, and the permeability of the film alone can be improved.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明によれば、パーマロイ単
層膜より飽和磁束密度が大きく、保磁力が小さく、かつ
耐熱性のよい磁性薄膜を作製できるので、これを適用し
た薄膜磁気ヘツドの分解能を高め、再生特性の良好な高
記録密度磁気記録用薄膜磁気ヘツドを提供できる効果が
ある。
As described above, according to the present invention, a magnetic thin film having a higher saturation magnetic flux density, a smaller coercive force, and better heat resistance than a permalloy single-layer film can be produced. There is an effect that it is possible to provide a thin film magnetic head for high recording density magnetic recording which has a high reproducing characteristic.

【図面の簡単な説明】[Brief description of drawings]

第1図はCoNiFe結晶粒径と保磁力の関係を示すグラフ、
第2図は薄膜磁気ヘツド縦断面図および記録,再生原理
を示す図、第3図は結晶粒径と基板温度の関係を示すグ
ラフ、第4図はCoNiFe膜厚と保磁力の関係を示すグラフ
である。 1……下部磁性膜層、2……ギヤツプ部、5……コイ
ル、6……上部磁性膜層、9……書込磁界、10……媒体
よりの記録磁界、12……記録媒体。
Figure 1 is a graph showing the relationship between CoNiFe crystal grain size and coercive force.
Fig. 2 is a vertical cross-sectional view of the thin film magnetic head and a diagram showing the recording / reproducing principle. Fig. 3 is a graph showing the relationship between crystal grain size and substrate temperature. Fig. 4 is a graph showing the relationship between CoNiFe film thickness and coercive force. Is. 1 ... lower magnetic film layer, 2 ... gear part, 5 ... coil, 6 ... upper magnetic film layer, 9 ... write magnetic field, 10 ... recording magnetic field from medium, 12 ... recording medium.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 成重 真治 茨城県日立市久慈町4026番地 株式会社日 立製作所日立研究所内 (72)発明者 西岡 浩一 茨城県日立市久慈町4026番地 株式会社日 立製作所日立研究所内 (72)発明者 華園 雅信 茨城県日立市久慈町4026番地 株式会社日 立製作所日立研究所内 (72)発明者 小林 哲夫 神奈川県小田原市国府津2880番地 株式会 社日立製作所小田原工場内 (56)参考文献 特開 昭62−287410(JP,A) 特開 昭62−243108(JP,A) 特開 昭62−158306(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Shinji Narishige 4026 Kuji Town, Hitachi City, Hitachi, Ibaraki 4026, Hitachi Research Institute, Ltd. (72) Koichi Nishioka 4026 Kuji Town, Hitachi City, Ibaraki, Hitachi, Ltd. In Hitachi Research Laboratory (72) Inventor Masanobu Kazono 4026 Kujicho, Hitachi City, Ibaraki Prefecture Hitachi Research Laboratory, Ltd. (72) Inventor Tetsuo Kobayashi 2880 Kokuzu, Odawara City, Kanagawa Hitachi Ltd. Odawara Factory ( 56) References JP-A-62-287410 (JP, A) JP-A-62-243108 (JP, A) JP-A-62-158306 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板上に第1の絶縁層を有し、当該絶縁層
上に下部磁性膜層、第2の絶縁層及び上部磁性膜層が順
に積層され、下部及び上部磁性膜層が一部分で接しかつ
同部分を巻回するコイルを第2の絶縁層内に有する薄膜
磁気ヘッドにおいて、前記磁性膜層の一部または全部は
磁性合金であるCoFeまたは、CoNiFeからなり、当該磁性
合金の結晶粒径の平均値が0.06μm以下であることを特
徴とする薄膜磁気ヘッド。
1. A first insulating layer on a substrate, a lower magnetic film layer, a second insulating layer and an upper magnetic film layer are sequentially stacked on the insulating layer, and the lower and upper magnetic film layers are partially formed. In a thin film magnetic head having a coil in contact with and winding the same portion in a second insulating layer, a part or all of the magnetic film layer is made of CoFe or CoNiFe which is a magnetic alloy, and a crystal of the magnetic alloy. A thin-film magnetic head having an average grain size of 0.06 μm or less.
JP62146058A 1987-06-11 1987-06-11 Thin film magnetic head Expired - Lifetime JPH083883B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62146058A JPH083883B2 (en) 1987-06-11 1987-06-11 Thin film magnetic head

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62146058A JPH083883B2 (en) 1987-06-11 1987-06-11 Thin film magnetic head

Publications (2)

Publication Number Publication Date
JPS63311613A JPS63311613A (en) 1988-12-20
JPH083883B2 true JPH083883B2 (en) 1996-01-17

Family

ID=15399132

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62146058A Expired - Lifetime JPH083883B2 (en) 1987-06-11 1987-06-11 Thin film magnetic head

Country Status (1)

Country Link
JP (1) JPH083883B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240972A (en) * 1988-07-29 1990-02-09 Nec Corp magnetoresistive thin film
JP2769403B2 (en) * 1992-02-21 1998-06-25 シーケーディ株式会社 Magnetoresistive element
US9142226B2 (en) 2012-06-29 2015-09-22 Seagate Technology Llc Thin film with tuned grain size
US9378760B2 (en) 2014-07-31 2016-06-28 Seagate Technology Llc Data reader with tuned microstructure

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661216A (en) * 1986-04-21 1987-04-28 International Business Machines Corporation Electrodepositing CoNiFe alloys for thin film heads

Also Published As

Publication number Publication date
JPS63311613A (en) 1988-12-20

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