JPH084181B2 - Semiconductor laser manufacturing method - Google Patents
Semiconductor laser manufacturing methodInfo
- Publication number
- JPH084181B2 JPH084181B2 JP22460287A JP22460287A JPH084181B2 JP H084181 B2 JPH084181 B2 JP H084181B2 JP 22460287 A JP22460287 A JP 22460287A JP 22460287 A JP22460287 A JP 22460287A JP H084181 B2 JPH084181 B2 JP H084181B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oscillation
- substrate
- semiconductor laser
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 230000010355 oscillation Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は半導体レーザの製造方法に関する。The present invention relates to a method for manufacturing a semiconductor laser.
（ロ） 従来の技術 現在、文書ファイルシステム等の記録媒体として、レ
ーザ光により記録及び読出しが行なえるレーザ記録媒体
（以下、光ディスクと称する）が広く用いられている。(B) Conventional Technology As a recording medium for a document file system or the like, a laser recording medium (hereinafter referred to as an optical disk) capable of recording and reading by a laser beam is widely used at present.
斯る光ディスクへの情報の記録は基板上に積層された
記録層の光反射率あるいは光透過率をレーザ光照射によ
り変化させることにより行ない、また、斯る情報の読出
しは上記記録層上をレーザ光で走査した際の斯るレーザ
光の反射量あるいは透過量の変化に基づいて行なってい
る。Information is recorded on such an optical disc by changing the light reflectance or light transmittance of a recording layer laminated on a substrate by irradiating a laser beam, and the reading of such information is performed on the recording layer by a laser beam. This is performed based on the change in the reflection amount or transmission amount of the laser light when scanning with light.
一方、斯る光ディスクの記録密度を向上させるため
に、異なる吸収波長を有する複数の記録層を多層化する
ことが特開昭59−210543号公報等で提案されている。On the other hand, in order to improve the recording density of such an optical disc, it has been proposed in JP-A-59-210543 that a plurality of recording layers having different absorption wavelengths are multilayered.
（ハ） 発明が解決しようとする問題点 ところで、このように光ディスクの記録層を多層化し
た場合、光ディスクに対する記録及び読出し用光源とし
ての半導体レーザとして夫々異なる波長のレーザ光を発
振可能な複数の発振領域をモノリシック化したものが必
要となってくる。(C) Problems to be Solved by the Invention By the way, when the recording layers of the optical disc are multilayered in this way, a plurality of semiconductor lasers capable of oscillating laser lights having different wavelengths are used as semiconductor lasers for recording and reading light sources for the optical disc. A monolithic oscillation region is needed.
このような、モノリシック型半導体レーザの一例とし
ては特開昭59−165487号公報に開示されている。An example of such a monolithic semiconductor laser is disclosed in JP-A-59-165487.
第２図は斯る半導体レーザを示す。斯る半導体レーザ
の製造は、まずＰ型GaAs基板（１）表面に0.6μｍ厚の
ｎ型GaAs電流阻止層（２）を液相エピタキシャル成長し
た後、夫々幅W1,W2（W1＞W2）を有し、かつ基板（１）
に達する深さを有するストライプ溝（３）（４）を周知
のホトリソグラフィ技術により電流阻止層（２）に形成
する。その後再度液相エピタキシャル成長法で、ｐ型Ga
1-yAlyAsからなる第１クラッド層（５）、ｎ型Ga1-xAlx
As（０＜ｘ＜ｙ＜１）からなる活性層（６）、ｎ型Ga
1-yAlyAsからなる第２クラッド層（７）及びｎ型GaAsか
らなるキャップ層（８）を順次積層し、発振層を形成す
る。次いで、基板（１）裏面にｐ側電極（９）及びキャ
ップ層（８）表面にｎ側電極（10）を形成すると共にｎ
側電極（10）より基板（１）に達する深さの溝（11）を
ストライプ溝（３）（４）と平行に刻設し、上記ストラ
イプ溝（３）（４）毎に発振層を分離する。FIG. 2 shows such a semiconductor laser. Such a semiconductor laser is manufactured by first performing liquid phase epitaxial growth of a 0.6 μm-thick n-type GaAs current blocking layer (2) on the surface of a P-type GaAs substrate (1), and then widths W 1 and W 2 (W 1 > W respectively). 2 ) and having a substrate (1)
Stripe trenches (3) and (4) having a depth reaching to the current blocking layer (2) are formed by a well-known photolithography technique. Then, p-type Ga
1-y Al y As first clad layer (5), n-type Ga 1-x Al x
Active layer (6) made of As (0 <x <y <1), n-type Ga
A second clad layer (7) made of 1-y Al y As and a cap layer (8) made of n-type GaAs are sequentially laminated to form an oscillation layer. Next, a p-side electrode (9) is formed on the back surface of the substrate (1) and an n-side electrode (10) is formed on the surface of the cap layer (8), and n
A groove (11) having a depth reaching the substrate (1) from the side electrode (10) is formed parallel to the stripe grooves (3) and (4), and the oscillation layer is separated for each of the stripe grooves (3) and (4). To do.
このように形成された半導体レーザでは、ストライプ
溝（３）（４）の溝幅W1,W2が夫々異なりかつW1＞W2と
なっているため、ストライプ溝（３）直上の第１クラッ
ド層（５）の表面形状は凹状となり、またストライプ溝
（４）直上の第１クラッド層（５）の表面形状は平坦と
なる。このため、活性層（６）が液相エピタキシャル成
長する際の成長速度は溝幅W1のストライプ溝（３）直上
の方が溝幅W2のストライプ溝（４）直上に較べて大とな
る。また、三元系あるいは四元系の結晶は成長速度によ
り組成が変化し、結果的にバンドギャップエネルギが変
化する。従って溝幅W1のストライプ溝（３）直上の活性
層（６）と溝幅W2のストライプ溝（４）直上の活性層
（６）とではバンドギャップエネルギが異なり、その結
果発振波長も異なることとなる。In the semiconductor laser thus formed, since the groove widths W 1 and W 2 of the stripe grooves (3) and (4) are different from each other and W 1 > W 2 , the first groove directly above the stripe groove (3) is The surface shape of the clad layer (5) is concave, and the surface shape of the first clad layer (5) immediately above the stripe groove (4) is flat. Therefore, the growth rate of the active layer (6) when performing liquid phase epitaxial growth is higher immediately above the stripe groove (3) having the groove width W 1 than immediately above the stripe groove (4) having the groove width W 2 . Further, the composition of the ternary or quaternary crystal changes depending on the growth rate, and as a result, the band gap energy changes. Therefore, the band gap energy is different between the active layer (6) immediately above the stripe groove (3) having the groove width W 1 and the active layer (6) immediately above the stripe groove (4) having the groove width W 2 , and as a result, the oscillation wavelength is also different. It will be.
然るに、このように活性層（６）のバンドギャップエ
ネルギをその成長速度の変化により異ならせる方法では
各ストライプ溝（３）（４）直上の活性層（６）より夫
々発振されるレーザ光の波長差は高々数10nmしか変化し
ない。このため、斯る半導体レーザを光源として使用す
る場合には光ディスクの各記録層の吸収特性を急峻なも
のとしなければならず、光ディスク自身がコスト高とな
る惧れがあった。However, in such a method in which the bandgap energy of the active layer (6) is changed by changing the growth rate, the wavelength of the laser light oscillated from the active layer (6) immediately above each stripe groove (3) (4) is increased. The difference changes by only a few tens of nm. Therefore, when such a semiconductor laser is used as a light source, the absorption characteristics of each recording layer of the optical disc must be made steep, and the optical disc itself may be costly.
（ニ） 問題点を解決するための手段 本発明は斯る点に鑑みてなされたもので、その構成的
特徴は基板の一主面上にGaAlAs系材料からなるストライ
プ状の第１の発振層を形成する第１の工程、上記第１の
発振層の表面及び側面に非晶質材料を被覆する第２の工
程、上記基板の一主面上にMOCVD法により上記第１の発
振層と平行に延在し、かつAlGaInP系材料からなる第２
の発振層を形成する第３の工程を備えたことにある。(D) Means for Solving the Problems The present invention has been made in view of the above problems, and its structural feature is that the stripe-shaped first oscillation layer made of a GaAlAs-based material is formed on one main surface of the substrate. A second step of coating the surface and the side surface of the first oscillation layer with an amorphous material, and a step of forming a parallel film with the first oscillation layer on one main surface of the substrate by MOCVD. Second, which extends to and consists of AlGaInP-based material
The third step is to form the oscillation layer.
（ホ） 作用 斯る方法によれば、夫々の発振レーザ光の波長差が10
0nm以上異なる発振層をモノリシックに形成できる。(E) Operation According to this method, the wavelength difference between the respective oscillated laser beams is 10
Oscillation layers that differ by 0 nm or more can be formed monolithically.
（ヘ） 実施例 第１図（ａ）〜（ｅ）は本発明の実施例を示す工程別
断面図である。(F) Example FIG. 1A to FIG. 1E are cross-sectional views by process showing an example of the present invention.
第１図は（ａ）は第１工程を示し、ｎ型GaAs基板（2
1）の一主面上にｎ型Ga0.55Al0.45Asからなる層厚1.5μ
ｍの第１クラッド層（22）、ノンドープGa0.95Al0.05As
からなる層厚0.07μｍの活性層（23）、ｐ型Ga0.55Al
0.45As5からなる層厚1.5μｍの第２クラッド層（24）及
びｐ型GaAsからなるキャップ層（25）を順次積層し、第
１の発振層（26）を形成する。斯る各層（22）〜（25）
は例えばTMG（トリメチルガリウム）ガス、TMAl（トリ
メチルアルミ）ガス、H2ベースの100ppm H2Se（水素化
セレン）ガス、DEZn（ジエチル亜鉛）ガス、AsH3（アル
シン）ガス等を用いた有機金属気相成長（MOCVD）法に
より形成できる。具体的には基板（21）温度を780℃に
保持すると共に反応系内の圧力を760Torrに保持した状
態で、表１に示す如き流量の各ガスを反応系内に導入す
ることにより各層（22）〜（25）が夫々成長する。FIG. 1 (a) shows the first step, in which an n-type GaAs substrate (2
1) Layer thickness of 1.5μ consisting of n-type Ga 0.55 Al 0.45 As on one main surface
m first cladding layer (22), undoped Ga 0.95 Al 0.05 As
Active layer (23) consisting of 0.07 μm thick, p-type Ga 0.55 Al
A second clad layer (24) made of 0.45 As5 and having a layer thickness of 1.5 μm and a cap layer (25) made of p-type GaAs are sequentially laminated to form a first oscillation layer (26). Each layer (22) ~ (25)
Is an organic metal such as TMG (trimethylgallium) gas, TMAl (trimethylaluminum) gas, H 2 -based 100 ppm H 2 Se (hydrogen selenium) gas, DEZn (diethylzinc) gas, AsH 3 (arsine) gas, etc. It can be formed by a vapor phase growth (MOCVD) method. Specifically, while maintaining the substrate (21) temperature at 780 ° C. and the pressure in the reaction system at 760 Torr, each layer (22 ) ~ (25) grow respectively.
第１図（ｂ）は第２工程を示し、第１の発振層（26）
を周知のウェットエッチング技術を用いて部分的に除去
し、第１の発振層（26）を紙面垂直方向に延在するスト
ライプ状とすると共に基板（21）の一主面の一部を露出
する。 FIG. 1 (b) shows the second step, and the first oscillation layer (26)
Are partially removed by using a well-known wet etching technique to form the first oscillating layer (26) in a stripe shape extending in the direction perpendicular to the paper surface and at the same time, a part of one main surface of the substrate (21) is exposed. .
第１図（ｃ）は第３工程を示し、第１の発振層（26）
上面及び露出した基板（21）の一主面と直交する第１の
発振層（26）側面にスパッタ法等により例えばSiO2から
なる非晶質膜（27）を選択的に積層する。FIG. 1C shows the third step, and the first oscillation layer (26)
An amorphous film (27) made of, for example, SiO 2 is selectively laminated on the upper surface and the side surface of the first oscillation layer (26) orthogonal to the one main surface of the exposed substrate (21) by a sputtering method or the like.
第１図（ｄ）は第４工程を示し、露出した基板（21）
の一主面上にｎ型（Al0.8Ga0.2）0.5In0.5Ｐからなる層
厚1.5μｍの第３クラッド層（28）、ノンドープGa0.5In
0.5Ｐからなる層厚0.07μｍの第２活性層（29）、ｐ型
（Al0.8Ga0.2）0.5In0.5Ｐからなる層厚1.5μｍの第４
クラッド層（30）及びｐ型GaAsからなる第２キャップ層
（31）を順次積層し、紙面垂直方向に延在する第２の発
振層（32）を形成する。斯る各層（28）〜（31）は反応
系内の圧力を70Torr、基板（21）温度を650℃に保持し
た状態で、斯る反応系にTMGガス、TMAlガス、H2ベース
の100ppm H2Seガス、DEZnガス、AsH3ガス、TMIn（トリ
メチルインジウム）ガス、PH3（フォスフィン）ガスを
選択的に導入することにより成長させる。表２に上記各
層（28）〜（31）の夫々の成長時に反応系内に導入され
るガスの種類及びその流量を示す。FIG. 1 (d) shows the fourth step, the exposed substrate (21).
A third cladding layer (28) made of n-type (Al 0.8 Ga 0.2 ) 0.5 In 0.5 P and having a layer thickness of 1.5 μm on one main surface of the non-doped Ga 0.5 In layer.
The second active layer (29) made of 0.5 P and having a layer thickness of 0.07 μm, and the fourth active layer (29) made of p-type (Al 0.8 Ga 0.2 ) 0.5 In 0.5 P and having a layer thickness of 1.5 μm.
The clad layer (30) and the second cap layer (31) made of p-type GaAs are sequentially laminated to form a second oscillation layer (32) extending in the direction perpendicular to the plane of the drawing. Each of the layers (28) to (31) has a pressure in the reaction system of 70 Torr and a substrate (21) temperature of 650 ° C., and the reaction system has TMG gas, TMAl gas, H 2 -based 100 ppm H 2 Se gas, DEZn gas, AsH 3 gas, TMIn (trimethylindium) gas, PH 3 (phosphine) gas are selectively introduced to grow. Table 2 shows the kind of gas introduced into the reaction system and the flow rate thereof during the growth of each of the layers (28) to (31).
このような減圧下で成長を行なうと非晶質膜（27）上
には結晶は成長せず、露出した基板（21）の一主面上に
選択的に第２の発振層（32）が成長する。 When growth is performed under such a reduced pressure, crystals do not grow on the amorphous film (27), and the second oscillation layer (32) is selectively formed on the exposed main surface of the substrate (21). grow up.
第１図（ｅ）は最終工程を示し、非晶質膜（27）を除
去すると共に、第１の発振層（26）のキャップ層（25）
と第２クラッド層（24）及び第２の発振層（32）の第２
キャップ層（31）と第４クラッド層（30）を夫々部分的
にエッチングし、各発振層（26）（32）を夫々リッジ構
造とする。尚、斯るエッチングにより第２、第４クラッ
ド層（24）（30）の被エッチング部分の層厚は0.2μｍ
となる。その後、キャップ層（25）及び第２キャップ層
（31）上にオーミック性の第１、第2p型電極（33）（3
4）を形成すると共に基板（21）の他主面にｎ型電極（3
5）を形成し、素子を完成する。FIG. 1 (e) shows the final step, in which the amorphous film (27) is removed and the cap layer (25) of the first oscillation layer (26) is removed.
And the second cladding layer (24) and the second oscillation layer (32)
The cap layer (31) and the fourth cladding layer (30) are partially etched so that the oscillation layers (26) and (32) have ridge structures. The thickness of the etched portions of the second and fourth clad layers (24) and (30) is 0.2 μm by such etching.
Becomes Then, ohmic first and second p-type electrodes (33) (3) are formed on the cap layer (25) and the second cap layer (31).
4) is formed and the n-type electrode (3
5) is formed to complete the device.
斯る半導体レーザではｎ型電極（35）と第1p型電極
（33）との間に順方向バイアスを印加することにより第
１の発振層（26）が駆動され、活性層（23）より830nm
のレーザ光が発振される。またｎ型電極（35）と第2p型
電極（34）との間に順方向バイアスを印加することによ
り第２の発振層（32）が駆動され、第２の活性層（29）
より680nmのレーザ光が発振される。In such a semiconductor laser, the first oscillation layer (26) is driven by applying a forward bias between the n-type electrode (35) and the first p-type electrode (33), and 830 nm is emitted from the active layer (23).
Laser light is oscillated. Further, by applying a forward bias between the n-type electrode (35) and the second p-type electrode (34), the second oscillation layer (32) is driven and the second active layer (29).
A laser beam of 680 nm is emitted.
（ト） 発明の効果 本発明によれば、発振レーザ光の波長が100nm以上異
なる２つの発振層をモノリシック的に製造できる。ま
た、本発明方法によればGaAlAs系材料からなる第１の発
振層形成後、AlGaInP系材料からなる第２の発振層を形
成する際の基板温度が第１の発振層形成時のそれに比し
て低くでき、その結果第２の発振層形成時に第１の発振
層に熱的ダメージを与える危惧はない。(G) Effect of the Invention According to the present invention, it is possible to monolithically manufacture two oscillation layers in which the wavelengths of the oscillation laser light differ by 100 nm or more. Further, according to the method of the present invention, the substrate temperature at the time of forming the second oscillation layer made of the AlGaInP type material after the formation of the first oscillation layer made of the GaAlAs type material is higher than that at the time of forming the first oscillation layer. Therefore, there is no fear of causing thermal damage to the first oscillation layer when forming the second oscillation layer.
第１図（ａ）〜（ｅ）は本発明の実施例を示す工程別断
面図、第２図は従来例を示す断面図である。 （21）……基板、（26）……第１の発振層、（27）……
非晶質膜（非晶質材料）、（32）……第２の発振層1 (a) to 1 (e) are cross-sectional views for each step showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a conventional example. (21) …… Substrate, (26) …… First oscillation layer, (27) ……
Amorphous film (amorphous material), (32) …… Second oscillation layer
Claims (1)
トライプ状の第１の発振層を形成する第１の工程、上記
第１の発振層の表面及び側面に非晶質材料を被覆する第
２の工程、上記基板の一主面上にMOCVD法により上記第
１の発振層と平行に延在するAlGaInP系材料からなる第
２の発振層を形成する第３の工程を備えたことを特徴と
する半導体レーザの製造方法。1. A first step of forming a stripe-shaped first oscillation layer made of a GaAlAs-based material on one main surface of a substrate, and a surface and a side surface of the first oscillation layer are coated with an amorphous material. And a third step of forming a second oscillating layer made of AlGaInP-based material extending in parallel with the first oscillating layer by MOCVD on one main surface of the substrate. A method for manufacturing a semiconductor laser, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22460287A JPH084181B2 (en) | 1987-09-08 | 1987-09-08 | Semiconductor laser manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22460287A JPH084181B2 (en) | 1987-09-08 | 1987-09-08 | Semiconductor laser manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6467992A JPS6467992A (en) | 1989-03-14 |
| JPH084181B2 true JPH084181B2 (en) | 1996-01-17 |
Family
ID=16816295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22460287A Expired - Lifetime JPH084181B2 (en) | 1987-09-08 | 1987-09-08 | Semiconductor laser manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH084181B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6136623A (en) * | 1998-05-06 | 2000-10-24 | Xerox Corporation | Multiple wavelength laser arrays by flip-chip bonding |
| JP4466503B2 (en) | 2005-08-08 | 2010-05-26 | ソニー株式会社 | Semiconductor laser |
-
1987
- 1987-09-08 JP JP22460287A patent/JPH084181B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6467992A (en) | 1989-03-14 |
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