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JPH085713B2 - Y-Ba-Cu-O-based oxide photoconductive material and method for producing the same - Google Patents
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JPH085713B2 - Y-Ba-Cu-O-based oxide photoconductive material and method for producing the same - Google Patents

Y-Ba-Cu-O-based oxide photoconductive material and method for producing the same

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Publication number
JPH085713B2
JPH085713B2 JP63022691A JP2269188A JPH085713B2 JP H085713 B2 JPH085713 B2 JP H085713B2 JP 63022691 A JP63022691 A JP 63022691A JP 2269188 A JP2269188 A JP 2269188A JP H085713 B2 JPH085713 B2 JP H085713B2
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JP
Japan
Prior art keywords
temperature
sample
superconducting
based oxide
photoconductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63022691A
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Japanese (ja)
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JPH01201058A (en
Inventor
泰三 真隅
Original Assignee
東京大学長
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京大学長 filed Critical 東京大学長
Priority to JP63022691A priority Critical patent/JPH085713B2/en
Priority to CA000577463A priority patent/CA1338851C/en
Publication of JPH01201058A publication Critical patent/JPH01201058A/en
Priority to US07/624,462 priority patent/US5168165A/en
Priority to US07/696,999 priority patent/US5140002A/en
Publication of JPH085713B2 publication Critical patent/JPH085713B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

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  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は酸化物超伝導体の超伝導性を示す組成範囲外
の組成で、これにつながる組成のものの光学的性質、特
に高速パルス光伝導の実験を行い常識的に予期し難い超
伝導性と深く関係した光伝導現象を呈する物質を発見し
たもので、その製造法において、組成比x,yを(たとえ
ばy=3でx=0→2と)制御するか、xとyを一定
(例えばx=2,y=3)として急冷するか徐冷するかで
zを制御することにより、x=0〜1に近いか、急冷さ
れたものは光伝導性をもった半導体、x=2に近く、徐
冷されたものは超伝導体となるもので、産業上の利用分
野としては超伝導オプトエレクトロニクスへの応用が期
待し得られるものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to the optical properties of a composition outside the composition range showing the superconductivity of an oxide superconductor and a composition leading to the composition, particularly high-speed pulsed photoconductivity. We discovered a substance that exhibits a photoconductivity phenomenon that is deeply related to superconductivity, which is unpredictable in common sense. In its manufacturing method, the composition ratio x, y (for example, y = 0, x = 0 → 2), or by controlling z by constant cooling of x and y (for example, x = 2, y = 3) or by gradually cooling, it is close to x = 0 to 1 or rapidly cooled. It is a semiconductor with photoconductivity, it is close to x = 2, and it is a superconductor when it is cooled slowly. As an industrial application field, it can be expected to be applied to superconducting optoelectronics. Is.

(従来の技術) これまでの超伝導材料は主として金属やそれらの合金
を用いてきた。また最近の酸化物高温超伝導体(例えば
Y−Ba−Cu−O系酸化物超伝導体)でもその臨界温度を
上げる目的で多量の添加元素(Ba,Sr)などが用いられ
ている。従って、それらの可視域近傍での光学的性質の
測定は、これらの金属的性質を反映して主として光反射
又は散乱の実験に限られて来た。
(Prior Art) Until now, superconducting materials have mainly used metals and their alloys. Also, in recent oxide high temperature superconductors (for example, Y-Ba-Cu-O-based oxide superconductors), a large amount of additional elements (Ba, Sr) and the like are used for the purpose of raising the critical temperature. Therefore, measurement of their optical properties near the visible has been largely limited to light reflection or scattering experiments, reflecting these metallic properties.

(発明が解決しようとする課題) このことが示すように超伝導体には光は反射するだけ
で入り込まず、したがって超伝導と光物性は国内外の学
会や国際会議でも反射や散乱をのぞいて殆んど無縁の分
野と考えられて来ている。
(Problems to be solved by the invention) As shown by this, light does not enter a superconductor by only reflecting it, so superconductivity and optical properties are not reflected or scattered at academic conferences and international conferences both in Japan and abroad. It is considered to be an almost unrelated field.

しかしながら、超伝導性に対応した光伝導性をもった
物質が製造できると、それらを組合わせてたとえば超伝
導フォトトランジスタなどの機器や、また現在追求され
ているジョセフソン素子を基盤にした“超伝導コンピュ
ータ”とオプトエレクトロニクスで提案されている“光
コンピュータ”の特性を併せもつような装置、すなわち
“超伝導光コンピュータ”等の作製が可能となる。
However, if a material with photoconductivity corresponding to superconductivity can be manufactured, it is possible to combine these materials, for example, devices such as superconducting phototransistors, and the “superconducting” based on the currently pursued Josephson device. It becomes possible to fabricate a device having both the characteristics of the "conduction computer" and the "optical computer" proposed in optoelectronics, that is, a "superconducting optical computer".

(課題を解決するための手段) 本発明の目的は、Y−Ba−Cu−O系酸化物超伝導物質
の超伝導現象が発生する臨界温度以下の温度において超
伝導性の発生に対応して光伝導性を生ずるY−Ba−Cu−
O系酸化物光伝導性物質を提供することにある。
(Means for Solving the Problems) An object of the present invention is to address the occurrence of superconductivity at a temperature below the critical temperature at which the superconducting phenomenon of a Y-Ba-Cu-O-based oxide superconducting material occurs. Y-Ba-Cu- that produces photoconductivity
An object is to provide an O-based oxide photoconductive material.

本発明によるY−Ba−Cu−O系酸化物光伝導性物質
は、 一般式 Y3-x−Bax−Cuy−Oz ここで、0≦x<1,3≦y≦6,6≦z≦12の組成より成
り、Y−Ba−Cu−O系酸化物超伝導物質の超伝導状態へ
の転移温度にほぼ対応した温度以下で、暗所において絶
縁体又は半導体であると共に、光照射により光伝導性を
生ずることを特徴とする。
Y-Ba-Cu-O based oxide photoconductive substance according to the invention have the general formula Y 3-x -Ba x -Cu y -O z , where, 0 ≦ x <1,3 ≦ y ≦ 6,6 It has a composition of ≦ z ≦ 12, and is an insulator or a semiconductor in a dark place at a temperature substantially corresponding to the transition temperature of the Y-Ba-Cu-O-based oxide superconducting substance to the superconducting state, It is characterized by producing photoconductivity by irradiation.

さらに、本発明によるY−Ba−Cu−O系酸化物光伝導
性物質の製造方法は、 一般式 Y3-x−Bax−Cuy−Oz ここで、0≦x<1,3≦y≦6,6≦6≦12の組成の出発
物質をその固相反応の生ずる温度650〜1050℃で1〜10
時間加熱し、その後徐冷し、加圧整形し、さらに570〜1
050℃にて2次焼結し、2000〜900℃/secの冷却温度で超
急冷するか、150〜200℃/Hの冷却速度で徐冷することに
よって、Y−Ba−Cu−O系の酸化物超伝導物質の超伝導
状態への転移温度にほぼ対応した温度以下で、暗所にお
いて絶縁体又は半導体であると共に、光照射により光伝
導性を生ずる物質を得ることを特徴とする。
Furthermore, the manufacturing method of the Y-Ba-Cu-O based oxide photoconductive substance according to the invention have the general formula Y 3-x -Ba x -Cu y -O z , where, 0 ≦ x <1,3 ≦ The starting material having a composition of y ≦ 6,6 ≦ 6 ≦ 12 is mixed with the solid-state reaction at a temperature of 650 to 1050 ° C. for 1 to 10
Heat for an hour, then slowly cool, press-shape, then 570-1
Secondary sintering is performed at 050 ° C., and ultra-quick cooling is performed at a cooling temperature of 2000 to 900 ° C./sec, or slow cooling is performed at a cooling rate of 150 to 200 ° C./H to obtain a Y-Ba-Cu-O system. It is characterized in that a substance which is an insulator or a semiconductor in a dark place and which exhibits photoconductivity by light irradiation is obtained at a temperature substantially lower than a transition temperature of an oxide superconducting substance to a superconducting state.

本発明の物質を一般式に示す組成で限定した理由は、
この組成範囲のものを固相反応の生ずる温度約650〜105
0℃の間に1〜10時間加熱し、徐冷し、加圧整形し、さ
らに570〜1050℃にて2次焼結し、2000〜900℃/secで超
急冷するか、150〜200℃/Hで徐冷すると、超伝導性と並
行した光伝導性をもった物質が得られるからであり、こ
の一般式に対応する(x,y,z)の数値の組成でx=0又
はx≦1よりx=0に近づくにつれて、絶縁性となり半
導体的性質を示し、かつ特定波長の光に対し光伝導性を
示すに対し、x=1よりx=2に近づくにつれて、超伝
導性に変化してゆくことを知見した。但しx=2,y=3
でz=6.75〜6.97の場合はよく知られた超伝導性を示
し、光伝導性は観測出来なくなるので、この範囲を本発
明の組成範囲より除外したものである。本発明で得られ
た物質のうち絶縁性を示す物質の一例をあげるとx=0,
y=3,z=7.5〜12であり、超伝導性を示す物質はたとえ
ばx=2,y=3,z=6.5〜6.97であり、実施例で示すとお
り、絶縁性物質の領域でも超伝導性を潜在させるかの如
き温度依存性と励起光波長依存性をもつ光伝導性を示す
ことを系統的に明らかにして本発明が完成されるもので
ある。
The reason why the substance of the present invention is limited to the composition represented by the general formula is as follows.
If the composition range is about 650 to 105
Heat at 0 ℃ for 1-10 hours, gradually cool, press-mold, and further sinter at 570-1050 ℃, super-cool at 2000-900 ℃ / sec, or 150-200 ℃ This is because a substance having photoconductivity in parallel with superconductivity can be obtained by slowly cooling with / H, and the composition of the numerical value of (x, y, z) corresponding to this general formula is x = 0 or x From ≦ 1, as x = 0 approaches, it becomes insulating and shows semiconductor-like properties, and exhibits photoconductivity for light of a specific wavelength, whereas from x = 1 toward x = 2, it changes to superconductivity. I found out that I would do it. However, x = 2, y = 3
In the case of z = 6.75 to 6.97, the well-known superconductivity is exhibited and the photoconductivity cannot be observed. Therefore, this range is excluded from the composition range of the present invention. Among the substances obtained by the present invention, an example of the substance showing an insulating property is x = 0,
y = 3, z = 7.5 to 12, and the substance exhibiting superconductivity is, for example, x = 2, y = 3, z = 6.5 to 6.97, and as shown in the examples, superconductivity is obtained even in the region of the insulating substance. The present invention is completed by systematically clarifying that it exhibits photoconductivity having temperature dependence and excitation light wavelength dependence as if it has latent properties.

従来知られているY3−Cu6−Oz(但し、z=6〜12)
及びY3-x−Bax−Cu3−Oyのような酸化物系化合物の大部
分は基底状態(ground state)即ち低温で特に光を照射
しない暗い場所では半導体である。したがって適当な大
きさの運動量とそれに応じた適量のエネルギーを、これ
らの物質の基底状態に与えることにより、素励起をつく
り出すことができる。通常超伝導体に対しては、エネル
ギーギャップを超えた素励起はBCS理論における超伝導
の基底状態を破壊する。しかしながら、絶縁性半導体で
は熱的に非平衡状態においてもバイポーラロン及び励起
子のように素励起のコヒーレント状態をつくり出せる可
能性がある。高臨界温度(Tc)の超伝導体の研究と並行
しているが、その研究の傾向とは異なり、新しい観点か
ら、つまり素励起概念の見地より基礎物理及び応用物理
の分野でむしろ完全な超伝導体とはならない組成のもの
で、超伝導体と近い組成で超伝導性に対応する光伝導性
を有する物質を知見し、本発明が完成されるものであ
る。
Conventionally known Y 3 -Cu 6 -O z (where, z = 6 to 12)
And most of the oxide-based compounds such as Y 3-x -Ba x -Cu 3 -O y is a semiconductor in the dark otherwise irradiated with light in a ground state (ground state) i.e. a low temperature. Therefore, elementary excitation can be created by giving an appropriate amount of momentum and an appropriate amount of energy to the ground state of these substances. For ordinary superconductors, elementary excitation beyond the energy gap destroys the superconducting ground state in BCS theory. However, there is a possibility that an insulating semiconductor can create a coherent state of elementary excitation like bipolaron and excitons even in a thermally non-equilibrium state. In parallel with the research on superconductors with high critical temperature (Tc), unlike the trend of research, it is a completely new superficial in the field of basic physics and applied physics from a new perspective, that is, from the viewpoint of elementary excitation concept. The present invention is completed by finding a substance having a composition that does not become a conductor and having a photoconductive property corresponding to superconductivity in a composition close to that of a superconductor.

(実施例) このような物質の一例をあげると、Y3-x−Bax−Cuy
Ozであり、このフェイスダイアグラムの全容を解明すべ
く、本研究を行った。ここで、本発明者は上記の物質の
超伝導相のみらなず、半導体相又は絶縁性相についても
解明すべく研究を行った。
(Example) As an example of such a material, Y 3-x -Ba x -Cu y -
This is O z , and this research was conducted to clarify the whole face diagram. Here, the present inventor has conducted research to clarify not only the superconducting phase of the above substances but also the semiconductor phase or the insulating phase.

Y−Cu−O系及びY−Ba−Cu−O系の多数の試料をY2
O3,BaCO3及びCuOの粉末より従来既知の方法すなわち650
〜1050℃での固相反応で一次焼成を行い、さらにその生
成物を用いて加圧整形後、570〜1050℃で2次焼結を行
い、500〜600℃で焼鈍し、徐冷する方法で製造した。出
発物質の組成については詳細に検討し、単純な超伝導物
質としての領域と接するものの、むしろそれらを外した
領域で一応制御できるものとなった。さらに加えて冷却
方法の緩急に注意してzを制御した。
A large number of samples of Y-Cu-O system and Y-Ba-Cu-O system were used for Y 2
O 3, BaCO 3 and conventionally powder CuO known methods namely 650
A method in which primary calcination is performed by solid-state reaction at ~ 1050 ° C, and after press-molding using the product, secondary sintering is performed at 570 ~ 1050 ° C, annealing at 500 ~ 600 ° C, and slow cooling. Manufactured in. The composition of the starting material was studied in detail, and although it was in contact with the area as a simple superconducting material, it could be controlled once in the area without them. In addition, z was controlled by paying attention to the speed of the cooling method.

このようにして得られたものが試料番号S22,S21,S20
などの試料である。
The samples thus obtained are sample numbers S22, S21, S20.
Samples such as.

なおY3−Cu3−O7.5の試料は#S61はその組成で、1
次焼成(1000〜1050℃×2H)徐冷し、加圧整形し、2次
焼成(1000〜1050℃×2H)冷却し、焼鈍(600℃×2H)
を徐冷で作製した。
Note samples Y 3 -Cu 3 -O 7.5 is # S61 in the composition, 1
Secondary firing (1000 to 1050 ° C x 2H) Slow cooling, pressure shaping, secondary firing (1000 to 1050 ° C x 2H) Cooling, annealing (600 ° C x 2H)
Was slowly cooled.

x,y及びzの値の或る部分の範囲内ではY3−Cu3−Oz,Y
3−Cu6−Oz及びY3-x−Bax−Cuy−Ozの試料は多くの(x,
y,z)の領域で高絶縁性となるか、又は低温で少くとも
半導体となるので、通常の抵抗測定技術では幾度か厳し
い困難に遭遇した。特に、非オーミック接触の電源及び
空間電荷の蓄積及び高インピーダンス材料における低キ
ャリヤー密度による低い信号/雑音比と組合さった場合
は厳しい問題となった。
x, is in the range of some portion of the value of y and z Y 3 -Cu 3 -O z, Y
3 -Cu 6 -O z and Y 3-x -Ba x -Cu y -O samples z many (x,
Since it becomes highly insulating in the y, z) region, or becomes at least a semiconductor at low temperatures, we encountered some severe difficulties with ordinary resistance measurement techniques. Especially in combination with non-ohmic contact power supply and space charge storage and low signal / noise ratio due to low carrier density in high impedance materials, it became a serious problem.

本実験においては、抵抗測定と伝導性測定とのために
2種類の技術を採用した。先ず最初にS22,S61番の絶縁
性試料(ρ108Ω・cm)のため、ブロッキング電極を
配した速いパルス技術を採用した〔第1図(A)を参
照〕。試料を3nsのパルス幅をもつ色素レーザー光で13H
zの繰返し率及び10msの間隔のE≒5kV/cmまでのパルス
電場に同期させて励起し〔第1図(b)参照〕、光伝導
応答の大きさを測定することにより上述の困難を克服で
きた。第2に、S20番及びS21番の如き、300Kで適度の伝
導性(ρ10-2〜10-1Ω・cm)をもつ試料に対しては、
光は用いず、通常の4端子法を採用して抵抗測定を行っ
た。
In this experiment, two types of techniques were adopted for resistance measurement and conductivity measurement. First, for the insulating samples S22 and S61 (ρ10 8 Ω · cm), the fast pulse technique with a blocking electrode was adopted [see FIG. 1 (A)]. Specimen 13H with dye laser light having a pulse width of 3 ns
Excited in synchronism with a pulsed electric field up to E≈5 kV / cm with a repetition rate of z and an interval of 10 ms [see FIG. 1 (b)], and the magnitude of the photoconductive response was measured to overcome the above-mentioned difficulties. did it. Secondly, for samples with moderate conductivity (ρ10 -2 to 10 -1 Ωcm) at 300K, such as S20 and S21,
The resistance was measured by adopting a normal four-terminal method without using light.

試料S20はY2O30.40g、BaCO31.40g、CuO0.85gを混合
し、焼成したもの、また試料S61はY2O32.25g、CuO1.591
gを混合し、Y3Cu3Ozとなるよう焼成したものである。試
料S21はY2O30.40g、BaCO30.35g、CuO0.425gを混合し、Y
2Ba1Cu3Ozの式となるように焼成した。試料S22はY2O30.
72g、CuO1.00gを混合し、Y3Cu6Ozとなるよう焼成した。
zは酸素の量を示し、焼成方法によりzが変化し、これ
に伴い得られた製品が異なる。
Sample S20 is a mixture of Y 2 O 3 0.40 g, BaCO 3 1.40 g, and CuO 0.85 g, and is fired.Sample S61 is Y 2 O 3 2.25 g, CuO1.591.
It was obtained by mixing g and firing so as to obtain Y 3 Cu 3 O z . Sample S21 is a mixture of Y 2 O 3 0.40g, BaCO 3 0.35g, and CuO 0.425g,
It was fired so that the formula of 2 Ba 1 Cu 3 O z was obtained. Sample S22 is Y 2 O 3 0.
72 g and CuO (1.00 g) were mixed and fired to obtain Y 3 Cu 6 O z .
z represents the amount of oxygen, z changes depending on the firing method, and the product obtained accordingly varies.

静的帯磁率又は磁化の大きさ自体は9GHzで動作するマ
イクロ波SQUID法〔第2図(A),(b)参照〕を使用
してH≒500Oeまでの弱い磁場で測定した。このシステ
ムは通常Qパターンにロックされたモードで作動させた
〔第2図(C)参照〕。このシステムのバンド幅はDCか
ら200KHzまでの拡がりをもち、捩じり率は約104φ0/sec
に設定した。
The static magnetic susceptibility or the magnitude of magnetization itself was measured in a weak magnetic field up to H≈500 Oe using the microwave SQUID method [see FIGS. 2 (A) and (b)] operating at 9 GHz. This system was normally operated in a mode locked in the Q pattern [see FIG. 2 (C)]. The bandwidth of this system extends from DC to 200 KHz, and the twist rate is about 10 4 φ 0 / sec.
Set to.

光伝導スペクトル応答はレーザーよりの入射パワー及
び焦電気検出器のスペクトル感度に対する適当な標準化
操作を基準として、分解能Δλ≒1nmの色素レーザーよ
りの波長λを選択することにより研究した。光励起によ
り試料が加熱する可能性は小さく、無視し得る程度であ
ると認められた。光励起によるキャリヤーの密度は106
〜108/cm3の桁である。全ての光信号は通常ボックカー
積分器を使用して同期モードで検波した。
The photoconductive spectral response was studied by selecting the wavelength λ from the dye laser with a resolution Δλ ≈ 1 nm, with reference to the appropriate standardization procedure for the incident power from the laser and the spectral sensitivity of the pyroelectric detector. It was recognized that the possibility that the sample would be heated by photoexcitation was small and negligible. Photoexcited carrier density is 10 6
It is of the order of 10 8 / cm 3 . All optical signals were typically detected in synchronous mode using a Bockker integrator.

(実験結果) 試料S20(x=2)を除く、Y3-x−Bax−Cu3−Ozの全
てと、Y3−Cu6−Oz(試料S20)とにおいて、上述のトラ
ンジエントパルス技術を使用した光伝導度を示す明瞭な
信号が認められた。
Experimental Results Sample S20 except (x = 2), and all Y 3-x -Ba x -Cu 3 -O z, in the Y 3 -Cu 6 -O z (sample S20), the above-described transient A clear signal was observed indicating the photoconductivity using the pulse technique.

第1に、光伝導度Q(λ,T,E,H)のEの依存性は77K
でE≒kV/cmまで殆んど直線的であることが発見され
た。Q(λ,T,E,H)における横方向及び縦方向の磁気抵
抗の有意な大きさは77KでH≒15kOeまで認められなかっ
た。
First, the dependence of photoconductivity Q (λ, T, E, H) on E is 77K.
It was found that the linearity was almost linear up to E≈kV / cm. No significant magnitude of lateral and longitudinal magnetoresistance in Q (λ, T, E, H) was observed up to H≈15 kOe at 77K.

第3図は(a)Y3−Cu6−Oz(但しz≒10.5)(試料S
22)、(b)Y3−Cu3−Oz(但しz≒7.5)(試料S6
1)、(c)Y2−Ba1−Cu3−Oz(但しz≒6.6)(試料S2
1)の波長λ≒460〜640nmの範囲のパルス励起光応答、
Q(λ,T)の代表的スペクトルを示す。
FIG. 3 is (a) Y 3 -Cu 6 -O z ( where z ≒ 10.5) (sample S
22), (b) Y 3 -Cu 3 -O z ( where z ≒ 7.5) (Sample S6
1), (c) Y 2 -Ba 1 -Cu 3 -O z ( where z ≒ 6.6) (Sample S2
1) pulsed pumping optical response in the range of wavelength λ ≈ 460 to 640 nm,
A representative spectrum of Q (λ, T) is shown.

第2にY3−Cu6−Oz(但しz≒10.5)(試料S22)及び
Y3−Cu3−Oz(但しz≒7.5)(試料S61)の磁化の大き
さM(T,H)は、少くとも4.2Kでは明らかに常磁性で正
符号であることが確認された(第4図参照)。最も顕著
な特色としては、Y1−Ba2−Cu3−Oz(試料S20)とりわ
けY2−Ba1−Cu3−Oz(z≒6.6)(試料S21)の磁化の大
きさM(T,H)が、超伝導状態に特有な反磁性を明確に
示していることが認められた。なお試料S21の磁化の大
きさは試料S20の磁化の大きさの約1/30である。
Second, the Y 3 -Cu 6 -O z (where z ≒ 10.5) (sample S22) and
Y 3 -Cu 3 -O z (where z ≒ 7.5) of the magnetization (Sample S61) size M (T, H), it was confirmed to be positive sign paramagnetic clearly the 4.2K least (See FIG. 4). The most prominent feature is that the magnitude of magnetization M (of Y 1 —Ba 2 —Cu 3 —O z (Sample S20), especially Y 2 —Ba 1 —Cu 3 —O z (z≈6.6) (Sample S21) It was confirmed that (T, H) clearly showed the diamagnetism peculiar to the superconducting state. The magnitude of magnetization of sample S21 is about 1/30 of the magnitude of magnetization of sample S20.

第3に、光伝導応答Q(λ,T)の波長領域λ≒500〜5
70nmでの温度依存性を第5図(a),(b)に各々例示
したように、臨界温度以下の温度において絶縁性である
試料S22と超伝導性を顕在化させている試料S21について
しらべた。驚くべきことには、試料S22では暗抵抗ρが
余りに大きく、第5図(c)には試料S21しか示し得な
いような暗抵抗ρ(T)の途方もなく大きな落差にもか
かわらず、それらの光電流応答Q(λ,T)の特色の間に
は顕著な類似性が存在する。温度を下げて行くと明確に
認められるのは、100K近傍で“光伝導性”が出現し始
め、絶対温度70〜80Kで極大値になった後やや平坦な部
分が絶対温度約10Kまでつづき、それ以下では超伝導性
の試料S21では光伝導応答Q(λ,T)は急速に減少す
る。
Thirdly, the wavelength region of photoconductive response Q (λ, T) λ≈500 to 5
As illustrated in FIGS. 5 (a) and 5 (b), the temperature dependence at 70 nm is examined for the sample S22 which is insulating at a temperature below the critical temperature and the sample S21 which exhibits superconductivity. It was Surprisingly, the dark resistance ρ is too large for sample S22 and despite the tremendous drop in dark resistance ρ (T) that only sample S21 can show in FIG. 5 (c). There are striking similarities between the features of the photocurrent response Q (λ, T) of It is clearly recognized that the temperature decreases as "photoconductivity" begins to appear at around 100K and reaches a maximum value at an absolute temperature of 70-80K, and the slightly flat part continues to an absolute temperature of about 10K. Below that, the photoconductive response Q (λ, T) rapidly decreases in the superconducting sample S21.

なお最後に超伝導性の試料Y2−Ba1−Cu3−Oz(試料S2
1)とY1−Ba2−Cu3−Oz(試料S20)の暗抵抗ρ(T)を
第5図(c)に温度の関数として示した。ここですぐ気
がつくことは、この試料は臨界温度Tc≒50〜90K以下で
超伝導性を示すこどである。ただし試料S20に対しては
光伝導応答Q(λ,T)は観測されていない。
Note finally superconductivity of the sample Y 2 -Ba 1 -Cu 3 -O z ( sample S2
The dark resistance ρ (T) of 1) and Y 1 —Ba 2 —Cu 3 —O z (Sample S20) is shown in FIG. 5 (c) as a function of temperature. What we notice immediately here is that this sample exhibits superconductivity at the critical temperature Tc ≈ 50 to 90K or less. However, the photoconductive response Q (λ, T) was not observed for the sample S20.

しかし、これらの実験事実を簡単に解釈することは容
易ではない。300KでY3−Cu6−Ozの試料S22は既に絶縁体
であり、Y2−Ba1−Cu3−Ozの試料S21は半導体である。
試料S21では、ブロッキング電極を配して観測された光
伝導性は第5図(b)に示されたように超伝導性と両立
しうるものである。これは磁化の大きさの値からも判る
ように恐らくは試料S21内の絶縁体的な部分によるもの
であろう。しかしながら驚嘆すべきことには、第5図
(a)に示した絶縁体試料S22においてすら実際に背後
に存在しているのではないかと考えられる超伝導性と潜
在的に深く関連しているかもしれない光伝導現象が存在
することである。
However, it is not easy to interpret these experimental facts easily. Samples S22 in 300K in Y 3 -Cu 6 -O z is already insulator, a sample S21 in Y 2 -Ba 1 -Cu 3 -O z is a semiconductor.
In the sample S21, the photoconductivity observed by disposing the blocking electrode is compatible with the superconductivity as shown in FIG. 5 (b). This is probably due to an insulator-like portion in the sample S21, as can be seen from the value of the magnitude of magnetization. However, surprisingly, it may be closely related to the superconductivity, which is considered to actually exist behind the insulator sample S22 shown in FIG. 5 (a). There is an unfortunate photoconduction phenomenon.

(実験の考察) 一般に広く認めらている所であるが、試料S21のよう
なY3-x−Bax−Cu3−Ozの試料は普通の濃い緑色をしてい
る。臨界温度以下の温度で絶縁体である。試料S22のよ
うなY3−Cu6−Oz試料は青緑色に見える。第3図(a)
〜(c)の光伝導度のスペクトル応答Q(λ,T)が強力
に示唆している事は、少くともY3−Cu6−Ozの試料で、
そしてさらに可能性があるのはY3-x−Bax−Cu3−Ozにお
いてもかりに原子層の段階ではないまでも、なんらかの
意味でCu+1をもつCu2O類似の状態の領域がどこかに存在
するということである。Q(λ,T)の応答信号が明確に
観測される以上、誰しも絶縁性のY−Cu−O系やY−Ba
−Cu−O系の試料の内部でも、伝導電子か、正孔かのい
づれかが、場合によっては両方が運動可能な状況になっ
たと考えざるを得ない。〔デンヴァー効果での光信号の
符号は光励起キャリヤーとしては正孔がより大きな寄与
をしていることを示している。〕 Cu2Oの光吸収と光伝導現象は励起子理論によって徹底
的に解明されている。我々が認めることが出来るのはY3
−Cu6−OzとY3-x−Bax−Cu3−Ozで両方のQ(λ)のス
ペクトルにCu2Oと類似の2,3の微細構造が存在すること
である。それゆえY−Cu−O系とY−Ba−Cu−O系のど
こかに無視し得ない比率でのCu2O類似の相が存在すると
仮定するのは理にかなっている。そこでは仮りに若干の
結晶構造の相違があるにしても、とに角、光励起された
伝導電子や正孔が確実に運動しうる状態にある。これ
は、酸素欠陥の度合いzや、特に最近主張されているそ
れらの秩序状態によるものと考えると、いかにも高い確
率で起っていそなう状況である。XPS(X線光電子分光
法)、EXAFS(Extended X−ray Absorption Fine
Struct−ures)、XANES(X−ray Absorption Near
Edge Structures)の実験結果は、2価のCu2+イオン、
3価のCu3+イオンの他に、1価のCu1+の存在を暗々裡に
示した。エネルギー帯構造に関する計算結果と状態密度
(Density of States)の評価も同じ様な傾向を示して
いる。
Although the place is (Experimental Discussion) generally prevalent et al, samples of Y 3-x -Ba x -Cu 3 -O z as a sample S21 is the ordinary dark green. It is an insulator at temperatures below the critical temperature. Y 3 -Cu 6 -O z samples, such as samples S22, appear blue-green. Fig. 3 (a)
It is strongly suggested that the spectral response Q (λ, T) of the photoconductivity of (c) is at least for the sample of Y 3 —Cu 6 —O z .
And if not at the stage of tentatively atomic layer even there is more possibility Y 3-x -Ba x -Cu 3 -O z, is Cu 2 O region of similar conditions with Cu +1 in some sense It means that it exists somewhere. Since the response signal of Q (λ, T) is clearly observed, anyone can insulate Y-Cu-O system or Y-Ba system.
In the inside of the —Cu—O-based sample, it is inevitable that either the conduction electron or the hole becomes movable in some cases. [The sign of the optical signal by the Denver effect shows that holes make a larger contribution as photoexcited carriers. ] The photoabsorption and photoconduction phenomena of Cu 2 O have been thoroughly elucidated by the exciton theory. We can only recognize Y 3
-Cu is that 6 -O z and Y 3-x -Ba x -Cu 3 spectrum Cu 2 O similar to 2 and 3 of the microstructure of both in -O z of Q (lambda) is present. Therefore, it makes sense to assume that there is a non-negligible proportion of Cu 2 O-like phases somewhere in the Y-Cu-O and Y-Ba-Cu-O systems. Even if there is a slight difference in crystal structure, there is a certain state that the conduction electrons and holes that are photoexcited can move reliably. This is a situation that occurs with a very high probability, considering the degree z of oxygen vacancies and, in particular, the recently claimed ordered state thereof. XPS (X-ray photoelectron spectroscopy), EXAFS (Extended X-ray Absorption Fine)
Struct-ures), XANES (X-ray Absorption Near
Edge Structures) experimental result is divalent Cu 2+ ion,
The existence of monovalent Cu 1+ in addition to trivalent Cu 3+ ions was implicitly shown. The calculation results for the energy band structure and the evaluation of the density of states (Density of States) show a similar tendency.

標準的なタイプのCu2O結晶での伝導電子や、正孔はポ
ーラロン形成に際してはLOオフノンとはむしろ弱い結合
定数α≒0.14〜0.18(それでも普通のIII・V族半導体
に比べるとむしろ大きい)をもっていると報告されてい
るので結果としては“大きなポーラロン”をつくり出す
ことになる。実際、伝導電子や正孔によるサイクロトン
共鳴が1.2〜20Kで観測されている。しかしながら、一方
ではここでのCu2O類似の部分ではY3−Cu6−Oz系、Y3-x
−Bax−Cu3−Oz系の試料が大きな静誘電率をもつ強誘電
性物質の系列に属するうえ、酸素欠陥の秩序状態などの
ために強められたもっと大きな有効誘電率κと結合定数
αをもつと考えられる。本来ミューラーがベトノルツと
一緒に研究を開始した際には、酸化物が強い電子−フォ
ノン相互作用をもち、ヤーンテラー効果によって起こる
結晶格子の歪みによってポーラロン形成を起し易い有力
な候補にりそうであったからである。ポーラロンでの動
的効果は、仮にそれがLO−フォノンと結合した“大きな
ポーラロン”であろうとヤーンテラー効果による“小さ
なポーラロン”であろうと、あるいは又それらの両方に
もとづく中間的なものであろうと、とにかくそれらは
“電子部分の分極によるポーラロン”と同様に本質的な
ものであるにちがいない。それらのフォノン部分による
ものと電子部分によるポーラロンは恐らくは素励起とし
てはコヒーレントに混成された状態で形成されているも
のであると思われる。
Conduction electrons and holes in standard type Cu 2 O crystals are rather weak coupling constants α ≈ 0.14 to 0.18 in LO polaron in polaron formation (still large compared to ordinary III / V semiconductors) As a result, it will create a "big polaron". In fact, cyclotron resonance due to conduction electrons and holes has been observed at 1.2 to 20K. However, on the other hand, in the Cu 2 O-like part here, the Y 3 -Cu 6 -O z system, Y 3-x
-Ba x -Cu 3 -O z system sample belongs to the series of ferroelectric materials with large static permittivity, and larger effective permittivity κ and coupling constant strengthened due to the ordered state of oxygen defects. It is considered to have α. Originally, when Mueller started his research together with Betonorz, the oxide has a strong electron-phonon interaction, and is likely to be a strong candidate for polaron formation due to the distortion of the crystal lattice caused by the Jahn-Teller effect. This is because the. The dynamic effect in a polaron, whether it is a "large polaron" combined with LO-phonons, a "small polaron" due to the Jahn-Teller effect, or an intermediate between both, Anyway, they must be as essential as "polarons due to polarization of the electronic part". The polarons due to the phonon part and the electronic part are probably formed as coherently hybridized states as elementary excitations.

それゆえ、ポーラロンが大きかろうが小さかろうがこ
れらのポーラロン、励起子の集合がここでの超伝導現象
に潜在的な役割をしていることを我々が想像することは
充分理にかなったものと考えられる。これらの結び合っ
たポーラロンと励起子の集合とは、多分バイポーラロ
ン、ポーラロン励起子及びあるいは励起子ポーラロンの
集合でいづれも動的な電子フォノン相互作用と電子間相
互作用の効果によるものであろう。これらのポーラロン
と励起子は酸素の2pと銅の3dの混成した価電子状態か
ら、後に(3d)で表わせる正孔1つを残して銅の4sの
伝導帯に(4s)の伝導電子をLOフォノン相互作用を伴
って光学的遷移でつくり出されたものである。ポーラロ
ンはここでの光学的遷移によっても、特にY−Cu−O系
ではYをBaで置換することによってつくり出すことがで
きる。第5図(a)に示されているようにY−Cu−O系
での光伝導応答Q(λ,T)はY−Ba−Cu−O系での超伝
導性の出現を反映している。同様な現象はLa−Cu−O系
でも観測されている。それゆえ、ここでのこれら素励起
の研究は超伝導基底状態の性質を反映している。我々の
知識の及ぶ限りではこれは高臨界温度超伝導性と完全反
磁性におけるポーラロンと励起子による機構の最初の明
確な実験的証拠である。
Therefore, it is reasonable enough to imagine that these polarons, whether they are large or small, have a potential role in the superconducting phenomena here, whether they are large or small. it is conceivable that. These coupled polarons and exciton sets are probably due to the effects of dynamic electron-phonon and electron-electron interactions, both in bipolarons, polaron excitons, and / or exciton polarons. . These polarons and excitons are transferred from the mixed valence state of 2p of oxygen and 3d of copper to the conduction band of (4s) 1 in the conduction band of 4s of copper, leaving one hole which can be represented by (3d) 9 later. An electron is created by an optical transition accompanied by LO phonon interaction. Polarons can also be created by the optical transitions here, especially in the Y-Cu-O system by substituting Y for Ba. As shown in Fig. 5 (a), the photoconductive response Q (λ, T) in the Y-Cu-O system reflects the appearance of superconductivity in the Y-Ba-Cu-O system. There is. Similar phenomenon has been observed in the La-Cu-O system. Therefore, the study of these elementary excitations here reflects the nature of the superconducting ground state. To the best of our knowledge, this is the first clear experimental evidence for the polaron and exciton mechanism in high critical temperature superconductivity and perfect diamagnetism.

(発明の効果) 以上の結果、我々は次のように結論することができ
る。4.2〜100Kの温度領域で、伝導度測定には直流四端
子法と繰返しパルス光伝導測定法を適用し、静帯磁率の
測定にはマイクロ波SQUIDを用いることで始めて超伝導
性と光伝導性を刻明にしらべた結果、これまで予想すら
出来なかった意味深長な一致、すなわち、超伝導性、完
全反磁性と光伝導性との相関がある超伝導性光伝導物質
は少くともY3-x−Bax−Cu3−O2系(0≦x<1,y=3〜
6,z=6〜12)であることを発見し、その製造法を発明
した。なおこの発明は我々が提案した“高温超伝導”に
対しての“ポーラロンと励起子による動的機構”という
理論的考察と並行して展開されたもので、これらの新素
材物質は光で直接超伝導性を制御する“超伝導オプトエ
レクトロニクス”という新しい最先端科学技術分野をひ
らくものである。
(Effect of Invention) As a result of the above, we can conclude as follows. In the temperature range of 4.2 to 100K, the direct current four-terminal method and the repetitive pulsed photoconductivity measurement method were applied to the conductivity measurement, and the microwave SQUID was used to measure the static magnetic susceptibility. As a result, it was found that there is at least a significant consensus that could not have been predicted until now, that is, superconducting photoconductive materials that have a correlation between superconductivity, perfect diamagnetism, and photoconductivity are at least Y 3- x -Ba x -Cu 3 -O 2 system (0 ≦ x <1, y = 3~
6, z = 6 to 12), and invented the manufacturing method. This invention was developed in parallel with the theoretical consideration of "dynamic mechanism by polarons and excitons" for our "high-temperature superconductivity". These new materials are directly exposed to light. It opens a new cutting-edge science and technology field called "superconducting optoelectronics" that controls superconductivity.

【図面の簡単な説明】[Brief description of drawings]

第1図(A)はブロッキング電極を配したくり返しパル
ス光伝導測定法の原理的回路配置図、 第1図(B)は測定の時系列波形図、 第2図(A)及び(B),(C)は静帯磁率測定用マイ
クロ波SQUIDによる測定装置主要部を示す図面、及び測
定系のブロック図、フィードバック系のブロック図、 第3図は超伝導性光伝導物質Y3-x−Bax−Cuy−Oz(a)
x=0,y=6,z≒10.5、(b)x=0,y=3,z≒7.5、
(c)x=1,y=3,z≒6.6の光伝導応答Q(λ,T)の波
長依存性を示す特性図、 第4図はY3-x−Bax−Cuy−Ozの各試料の磁化の大きさで
マイクロ波SQUIDの信号検出コイルに誘起された信号の
波形図、 第5図は超伝導性光伝導物質Y3-x−Bax−Cuy−Ozの光伝
導応答Q(λ,T)の温度依存性(a)x=0,y=3,z≒7.
5、(b)x=1,y=3,z≒6.6、(c)x=1,y=3,z≒6.
6とx=2,y=3,z≒6.9の暗抵抗の温度依存性ρ(T)を
示す特性図である。
FIG. 1 (A) is a principle circuit layout diagram of the repeated pulse photoconductivity measurement method in which blocking electrodes are arranged, FIG. 1 (B) is a time-series waveform diagram of measurement, and FIGS. 2 (A) and (B), (C) is a drawing showing the main part of the measuring device by the microwave SQUID for static magnetic susceptibility measurement, and a block diagram of the measuring system, a block diagram of the feedback system, and FIG. 3 is a superconducting photoconductive material Y 3-x -Ba x- Cu y- O z (a)
x = 0, y = 6, z≈10.5, (b) x = 0, y = 3, z≈7.5,
(C) A characteristic diagram showing the wavelength dependence of the photoconductive response Q (λ, T) where x = 1, y = 3, z≈6.6, and FIG. 4 shows Y 3−x −Ba x −Cu y −O z. Fig. 5 shows the waveform of the signal induced in the signal detection coil of the microwave SQUID by the magnitude of the magnetization of each sample in Fig. 5, and Fig. 5 shows the light of the superconducting photoconductive material Y 3-x -Ba x -Cu y -O z . Temperature dependence of conduction response Q (λ, T) (a) x = 0, y = 3, z≈7.
5, (b) x = 1, y = 3, z≈6.6, (c) x = 1, y = 3, z≈6.
6 is a characteristic diagram showing the temperature dependence ρ (T) of the dark resistance of 6 and x = 2, y = 3, z≈6.9.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】一般式 Y3-x−Bax−Cuy−Oz ここで、0≦x<1,3≦y≦6,6≦z≦12の組成より成
り、Y−Ba−Cu−O系酸化物超伝導物質の超伝導状態へ
の転移温度にほぼ対応した温度以下で、暗所において絶
縁体又は半導体であると共に、光照射により光伝導性を
生ずることを特徴とするY−Ba−Cu−O系酸化物伝導性
物質。
[Claim ## wherein the general formula Y 3-x -Ba x -Cu y -O z, consists composition of 0 ≦ x <1,3 ≦ y ≦ 6,6 ≦ z ≦ 12, Y-Ba-Cu A Y-characterized by being an insulator or a semiconductor in a dark place at a temperature substantially corresponding to a transition temperature of an O-based oxide superconducting substance to a superconducting state or less, and exhibiting photoconductivity by light irradiation. Ba-Cu-O-based oxide conductive material.
【請求項2】一般式 Y3-x−Bax−Cuy−Oz ここで、0≦x<1,3≦y≦6,6≦6≦12の組成の出発物
質をその固相反応の生ずる温度650〜1050℃で1〜10時
間加熱し、その後徐冷し、加圧整形し、さらに570〜105
0℃にて2次焼結し、2000〜900℃/secの冷却温度で超急
冷するか、150〜200℃/Hの冷却速度で徐冷することによ
って、Y−Ba−Cu−O系の酸化物超伝導物質の超伝導状
態への転移温度にほぼ対応した温度以下で、暗所におい
て絶縁体又は半導体であると共に、光照射により光伝導
性を生ずる物質を得ることを特徴とするY−Ba−Cu−O
系酸化物光伝導性物質の製造方法。
2. Here the general formula Y 3-x -Ba x -Cu y -O z, 0 ≦ x <1,3 ≦ y ≦ 6,6 ≦ 6 ≦ 12 The starting materials of the composition of the solid phase reaction Heat at a temperature of 650 to 1050 ℃ for 1 to 10 hours, then slowly cool, press-shape, and further 570 to 105
Secondary sintering is performed at 0 ° C., and ultra-quick cooling is performed at a cooling temperature of 2000 to 900 ° C./sec, or slow cooling is performed at a cooling rate of 150 to 200 ° C./H. A Y-characterized as a substance which is an insulator or a semiconductor in a dark place and which exhibits photoconductivity upon irradiation with light at a temperature substantially lower than a transition temperature of an oxide superconducting substance to a superconducting state. Ba-Cu-O
-Based oxide photoconductive material manufacturing method.
JP63022691A 1988-02-04 1988-02-04 Y-Ba-Cu-O-based oxide photoconductive material and method for producing the same Expired - Lifetime JPH085713B2 (en)

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JP63022691A JPH085713B2 (en) 1988-02-04 1988-02-04 Y-Ba-Cu-O-based oxide photoconductive material and method for producing the same
CA000577463A CA1338851C (en) 1988-02-04 1988-09-15 Superconductive photoconductive-substance of the y-ba-cu-o system and a method for producing the same
US07/624,462 US5168165A (en) 1988-02-04 1990-12-10 Superconductive photoconductive-substance of the Y-Ba-Cu-O system and a method for producing the same
US07/696,999 US5140002A (en) 1988-02-04 1991-05-03 Photoconductive-substance of the Y-Ba-Cu-O system and a method for producing the same

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Publication number Priority date Publication date Assignee Title
JPH07109905B2 (en) * 1991-07-16 1995-11-22 東京大学長 Bi-SrCa (LaY) -Cu-O-based oxide superconducting conjugate photoconductive material, method for producing the same, and superconducting optoelectronic device using the same

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* Cited by examiner, † Cited by third party
Title
JapaneseJournalofAppliedPhysicsVol.26No.11p.L1845〜L1846

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CA1338851C (en) 1997-01-21

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