JPH086171B2 - Method for forming carbon-based film - Google Patents
Method for forming carbon-based filmInfo
- Publication number
- JPH086171B2 JPH086171B2 JP32100487A JP32100487A JPH086171B2 JP H086171 B2 JPH086171 B2 JP H086171B2 JP 32100487 A JP32100487 A JP 32100487A JP 32100487 A JP32100487 A JP 32100487A JP H086171 B2 JPH086171 B2 JP H086171B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- substrate
- film
- based film
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052799 carbon Inorganic materials 0.000 title claims description 54
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 45
- 150000002500 ions Chemical class 0.000 claims description 43
- 239000010410 layer Substances 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- -1 carbon ions Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 24
- 229910003460 diamond Inorganic materials 0.000 description 11
- 239000010432 diamond Substances 0.000 description 11
- 229910003481 amorphous carbon Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005405 multipole Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、基体の表面に非晶質炭素膜やダイヤモン
ド膜等の炭素系膜を形成する方法に関する。The present invention relates to a method for forming a carbon-based film such as an amorphous carbon film or a diamond film on the surface of a substrate.
上記のような炭素系膜の形成は、従来は例えば、炭素
水素系や有機化合物系の反応ガスを用いたプラズマCVD
法、熱CVD法等のCVD法（化学気相成長法）、あるいは蒸
発炭素をイオン化し電界で加速して基体表面に蒸着させ
るイオンプレーティング法によって行われていた。Conventionally, the formation of a carbon-based film as described above is performed by, for example, plasma CVD using a carbon-hydrogen-based or organic compound-based reaction gas.
Method, a CVD method (chemical vapor deposition method) such as a thermal CVD method, or an ion plating method in which evaporated carbon is ionized and accelerated by an electric field to deposit on the surface of the substrate.
ところが上記のようなCVD法やイオンプレーティング
法では、基体に到達する粒子のエネルギーが極めて小さ
い（例えば前者で高々100eV程度、後者で高々150eV程
度）こと等が原因して、基体に対する上記のような炭素
系膜の密着性が悪いという問題があった。However, in the above CVD method or ion plating method, the energy of particles reaching the substrate is extremely small (for example, the former is about 100 eV at most and the latter is at most 150 eV). There was a problem that the adhesion of the various carbon-based films was poor.
特に、ステンレス製の基体に対しては、ステンレスに
対する炭素系膜の整合性（合い性）が悪いこともあっ
て、上記のような炭素系膜を安定にかつ密着性良く形成
することは困難であった。In particular, with respect to a stainless steel substrate, it is difficult to form the above-described carbon-based film stably and with good adhesion, because the carbon-based film does not have good compatibility with stainless steel. there were.
そこでこの発明は、ステンレスを含む様々な種類の基
体の表面に、非晶質炭素膜やダイヤモンド膜等の炭素系
膜を安定にかつ密着性良く形成することができる方法を
提供することを目的とする。Therefore, an object of the present invention is to provide a method capable of forming a carbon-based film such as an amorphous carbon film or a diamond film stably and with good adhesion on the surface of various types of substrates including stainless steel. To do.
この発明の炭素系膜の形成方法は、基体の表面に炭素
系膜を形成する際、真空中で当該基体に対して炭素イオ
ンおよび炭素を含む物質のイオンの内の少なくとも一種
を注入することによって当該基体の表層部に当該基体材
料の炭化層を予め形成し、次いでその上に前記炭素系膜
を形成することを特徴とする。The method of forming a carbon-based film according to the present invention comprises, when forming a carbon-based film on the surface of a substrate, injecting at least one of carbon ions and ions of a substance containing carbon into the substrate in a vacuum. A carbonized layer of the substrate material is formed in advance on the surface layer of the substrate, and then the carbon-based film is formed thereon.
イオン注入によって基体の表層部に当該基体材料の炭
化層を予め形成することによって、基体の表層部と後に
形成する炭素系膜とは共に炭素系の物質同士となり互い
の整合性が向上する。その結果、ステンレスを含む様々
な種類の基体の表面に、非晶質炭素膜やダイヤモンド膜
等の炭素系膜を安定にかつ密着性良く形成することがで
きるようになる。By forming a carbonized layer of the base material in advance on the surface layer of the substrate by ion implantation, both the surface layer of the substrate and the carbon-based film to be formed later become carbon-based substances and their mutual compatibility is improved. As a result, a carbon-based film such as an amorphous carbon film or a diamond film can be formed stably and with good adhesion on the surface of various types of substrates including stainless steel.
第１図は、この発明に係る方法を実施する装置の一例
を示す概略図である。FIG. 1 is a schematic diagram showing an example of an apparatus for performing a method according to the present invention.
真空容器（図示省略）内に、例えばホルダ10に取り付
けられて基体２が収納されており、当該基体２に向けて
イオン源12が、更にこの例では蒸発源18が配置されてい
る。In a vacuum container (not shown), for example, a holder 10 is mounted to accommodate the substrate 2, and an ion source 12 and an evaporation source 18 in this example are disposed toward the substrate 2.
イオン源12は、この例ではプラズマ閉じ込めに多極磁
場を用いるバケット型イオン源であり、供給されたガス
Ｇをイオン化して均一で大面積のイオン（イオンビー
ム）14を基体２の表面に向けて加速することができるの
で、一度に大面積の処理が可能になる。In this example, the ion source 12 is a bucket type ion source that uses a multipole magnetic field for plasma confinement, and ionizes the supplied gas G to direct uniform and large-area ions (ion beam) 14 to the surface of the substrate 2. Because it can be accelerated, it is possible to process a large area at a time.
もっとも、このようなバケット型イオン源の代わり
に、カウフマン型等の他のタイプのイオン源を用いても
良く、あるいはイオン源から引き出され質量分析された
スポット状のイオンビームを必要面積に亘りスキャンし
て照射するようにしても良い。However, instead of such a bucket type ion source, another type of ion source such as a Kauffman type may be used, or a spot-shaped ion beam extracted from the ion source and subjected to mass analysis is scanned over a required area. You may make it irradiate.
蒸発源18は、後述する第２の工程にのみ用いるので、
これについては後述する。Since the evaporation source 18 is used only in the second step described later,
This will be described later.
処理に際しては、真空容器内を例えば10-5〜10-7Torr
程度にまで排気した後、まず第１の工程として、イオン
源12にガスＧとして例えば一酸化炭素ガス、二酸化炭素
ガス、炭化水素系ガス（例えばメタンガス、エタンガス
等）、有機化合物系ガス（例えばアセトン等）等の組成
上炭素を含むガスの少なくとも一種を供給することによ
って、イオン源12からイオン14として、炭素イオンおよ
び炭素を含む物質のイオン（例えばCHイオン等）の内の
少なくとも一種、即ちこれらの単一イオンまたは混合イ
オンを引き出して、これを基体２に注入する。このとき
の基体２に対するイオン14の注入量は、例えばビームモ
ニタ16によって計測することができる。At the time of processing, the inside of the vacuum vessel is, for example, 10 -5 to 10 -7 Torr.
After exhausting to a certain degree, as a first step, the ion source 12 is supplied with gas G such as carbon monoxide gas, carbon dioxide gas, hydrocarbon gas (eg methane gas, ethane gas), organic compound gas (eg acetone). By supplying at least one kind of gas containing carbon in terms of composition, etc., at least one of carbon ions and ions of a substance containing carbon (such as CH ions), that is, these, as the ions 14 from the ion source 12 Single ions or mixed ions are extracted and injected into the substrate 2. The implantation amount of the ions 14 into the substrate 2 at this time can be measured by, for example, the beam monitor 16.
それによって、例えば第２図に示すように、基体２の
表層部に当該基体材料の炭化層４が形成される。As a result, for example, as shown in FIG. 2, a carbonized layer 4 of the base material is formed on the surface layer portion of the base 2.
その場合、注入イオン14のエネルギーは、基体２の種
類と当該イオン14の基体２内飛程により関係付けられる
ため特に限定されるものではないが、下限はイオン源２
からイオン14を引き出せる限度から現実的には10eV程度
以上になる。また、上限は膜中または基板における損傷
を軽減するために、通常50KeV以下が好ましいが、50KeV
以上でも炭化層の形成は可能で、この場合には必要に応
じてアニール処理をしても良い。In that case, the energy of the implanted ions 14 is not particularly limited because it is related by the type of the substrate 2 and the range of the ions 14 in the substrate 2, but the lower limit is the ion source 2.
From the limit that can extract ions 14 from, it will be about 10 eV or more in reality. The upper limit is usually 50 KeV or less in order to reduce damage in the film or the substrate, but 50 KeV
The carbonized layer can also be formed by the above, and in this case, an annealing treatment may be performed if necessary.
また、基体２に対するイオン14の注入量も、基体２の
種類により炭化層４の形成状態が異なるため特に限定さ
れるものではないが、イオン注入による基体２内の損傷
を防止するため、例えば１×1018イオン/cm2程度以下に
するのが好ましい。Also, the amount of ions 14 implanted into the substrate 2 is not particularly limited because the formation state of the carbonized layer 4 varies depending on the type of the substrate 2, but in order to prevent damage to the substrate 2 due to ion implantation, for example, 1 × preferably set to 10 18 or less 2 about ion / cm.
また、イオン14の注入時は、それによる基体２の熱的
損傷を防止する観点から基体２の種類によってはそれを
冷却しても良く、あるいは炭化層が拡散し易くなる観点
から基体２をその変態温度以下で加熱しても良い。また
注入後、基体２に対して注入イオンと同種のガス中で損
傷回復のためにアニール処理を施しても良い。Further, during the implantation of the ions 14, depending on the type of the substrate 2, it may be cooled from the viewpoint of preventing thermal damage to the substrate 2, or the substrate 2 may be changed from the viewpoint of facilitating diffusion of the carbonized layer. You may heat at a transformation temperature or less. After the implantation, the substrate 2 may be annealed in the same gas as the implanted ions to recover damage.
そして上記のようにして基体２の表層部に炭化層４を
予め形成した後、次いで第２の工程として、その上に非
晶質炭素膜やダイヤモンド膜等の炭素系膜６（第２図参
照）を形成する。Then, after the carbonized layer 4 is formed in advance on the surface layer portion of the substrate 2 as described above, then in a second step, a carbon-based film 6 such as an amorphous carbon film or a diamond film is formed thereon (see FIG. 2). ) Is formed.
この炭素系膜６の形成は、前述したようなCVD法、イ
オンプレーティング法等の既存技術を用いて行っても良
いし、次に述べるような真空蒸着とイオン照射を併用す
る方法を用いて行っても良い。The formation of the carbon-based film 6 may be performed by using an existing technique such as the above-described CVD method or ion plating method, or by using a method that uses both vacuum deposition and ion irradiation as described below. You can go.
いずれの方法によるにしても、基体２の表層部と後に
形成する炭素系膜６とは共に炭素系の物質同士となるた
め、互いの整合性が向上する。その結果、基体２に対す
る炭素系膜６の密着性が向上すると共に、様々な種類の
基体２に対して、例えば従来は非晶質炭素膜やダイヤモ
ンド膜等の炭素系膜６の形成が困難とされていたステン
レスのような基体２に対しても、これらの膜を安定にか
つ密着性良く形成することができるようになる。Whichever method is used, the surface layer portion of the base body 2 and the carbon-based film 6 to be formed later are both carbon-based substances, so that the compatibility with each other is improved. As a result, the adhesion of the carbon-based film 6 to the substrate 2 is improved, and it is difficult to form the carbon-based film 6 such as an amorphous carbon film or a diamond film in the past on various types of substrates 2. It is possible to form these films stably and with good adhesiveness even on the conventional base body 2 such as stainless steel.
次に、真空蒸着とイオン照射の併用によって前述した
炭素系膜６を形成する方法の例を説明する。この場合
は、上記イオン源12と共に蒸発源18を用いる。Next, an example of a method of forming the carbon-based film 6 described above by using both vacuum deposition and ion irradiation will be described. In this case, the evaporation source 18 is used together with the ion source 12.
蒸発源18は、例えば電子ビーム蒸発源であり、炭素20
を蒸発させてそれを基体２の表面に蒸着させることがで
きるが、他のタイプの蒸発源を用いても良い。22は、基
体２上に蒸着させる膜の膜厚等を計測する膜厚モニタで
ある。The evaporation source 18 is, for example, an electron beam evaporation source, and carbon 20
Can be evaporated to deposit it on the surface of the substrate 2, although other types of evaporation sources may be used. Reference numeral 22 is a film thickness monitor for measuring the film thickness of the film deposited on the substrate 2.
またイオン源12に供給するガスＧとしては、この場合
は前述したような炭化水素系ガス、有機化合物系ガスお
よび不活性ガス（例えばヘリウムガス、アルゴンガス
等）の内の少なくとも一種、即ちこれらの単一ガスまた
は混合ガスを用いる。これは、炭化水素系ガスや有機化
合物系ガスを用いれば、蒸着炭素にそれと同系の、即ち
炭素系のイオン14が照射されるため、それによって蒸着
炭素をより励起し易くなるからであり、不活性ガスを用
いれば、イオン14として照射される不活性元素は反応性
が乏しいため、不純物混入の無い良質の炭素系膜６が得
られるからである。また、ダイヤモンド形成を促進する
ため、上記のようなガスにケイ素系ガスおよび水素ガス
の内の少なくとも一方を混合しても良い。In this case, the gas G supplied to the ion source 12 is at least one of the above-mentioned hydrocarbon-based gas, organic compound-based gas and inert gas (for example, helium gas, argon gas, etc.), that is, these gases. A single gas or a mixed gas is used. This is because when a hydrocarbon-based gas or an organic compound-based gas is used, the vapor-deposited carbon is irradiated with ions 14 of the same type as that of the vapor-deposited carbon, that is, a carbon-based ion, which makes it easier to excite the vapor-deposited carbon. This is because if the active gas is used, the inert element irradiated as the ions 14 has poor reactivity, and thus a good quality carbon-based film 6 free of impurities can be obtained. Further, in order to promote diamond formation, at least one of silicon-based gas and hydrogen gas may be mixed with the above gas.
炭素系膜６の形成に際しては、この例では前記第１の
工程に引き続いて同一の真空容器内で、蒸発源18からの
炭素20を基体２上に（詳しくはその表層部の炭化層14上
に）蒸着させるのと同時に、またはそれと交互に、イオ
ン源12からのイオン14を基体２に向けて連続的にまたは
間欠的に照射する。In forming the carbon-based film 6, in this example, following the first step, the carbon 20 from the evaporation source 18 is deposited on the substrate 2 (specifically, on the carbonized layer 14 of the surface layer portion thereof) in the same vacuum container. (B) Simultaneously with or alternately with the vapor deposition, the ions 14 from the ion source 12 are continuously or intermittently irradiated to the substrate 2.
これによって、例えば第２図に示すように基体２の表
面に、即ちその表層部の炭化層14の上に、非晶質炭素膜
やダイヤモンド膜等の炭素系膜６が形成される。これ
は、イオン14の照射によって、基体２に蒸着された炭素
を非晶質化したり、基体２に蒸着されたグラファイト構
造の炭素に核形成エネルギーを供給してそれをダイヤモ
ンドに結晶成長させたりすることができるからである。As a result, for example, as shown in FIG. 2, a carbon-based film 6 such as an amorphous carbon film or a diamond film is formed on the surface of the substrate 2, that is, on the carbonized layer 14 in the surface layer portion thereof. This is because the carbon deposited on the substrate 2 is made amorphous by the irradiation of the ions 14, or nucleation energy is supplied to the carbon of the graphite structure deposited on the substrate 2 to cause it to grow into diamond crystals. Because you can.
その場合、炭素系膜６の膜質、例えば当該膜中におけ
るダイヤモンド結晶と非晶質炭素との割合等は、基体２
に入射させるイオン／炭素の割合、イオン源12に供給す
る上記のような各種ガスの混合比、イオン14のエネルギ
ー等の条件によって制御することができる。In that case, the film quality of the carbon-based film 6, for example, the ratio of diamond crystals and amorphous carbon in the film, is determined by the base 2
It can be controlled by conditions such as the ratio of ions / carbon incident on the ion source, the mixing ratio of various gases as described above supplied to the ion source 12, the energy of the ions 14, and the like.
また、この場合のイオン14のエネルギーは、その照射
によって炭素系膜６の内部にダメージ（欠陥部）が発生
するを極力少なくする観点から、10KeV程度以下の低エ
ネルギー、より好ましくは数百eV程度以下にするのが良
い。またその下限は、特に限定されるものではないが、
前記の場合と同様に現実的には10eV程度以上になる。Further, the energy of the ions 14 in this case is low energy of about 10 KeV or less, more preferably about several hundred eV from the viewpoint of minimizing damage (defects) inside the carbon-based film 6 due to the irradiation. The following is good. The lower limit is not particularly limited,
As in the case described above, it is about 10 eV or more in reality.
また、この場合も膜形成時には、必要に応じて基体２
を加熱あるいは冷却しても良く、加熱すれば熱励起によ
ってダイヤモンド形成の反応を促進することができると
共に、炭素系膜６中に発生する欠陥部を成膜中に除去す
ることができ、また冷却すればイオン14の照射による基
体２の熱的損傷を防止することができる。Also in this case, when the film is formed, if necessary, the substrate 2
May be heated or cooled. If heated, the reaction of diamond formation can be promoted by thermal excitation, and the defect portion generated in the carbon-based film 6 can be removed during the film formation, and the cooling can be performed. By doing so, it is possible to prevent the substrate 2 from being thermally damaged by the irradiation of the ions 14.
上記方法によって炭素系膜６を形成する場合の特徴を
列挙すれば次の通りである。The features of forming the carbon-based film 6 by the above method are listed below.
CVD法と違って熱励起を主体としていないため、低
温処理が可能であり、その結果基体２として使用できる
材質の範囲が大幅に広がる。Unlike the CVD method, it is not mainly subjected to thermal excitation, so that low-temperature treatment is possible, and as a result, the range of materials that can be used as the substrate 2 is greatly expanded.
イオン14の押し込み（ノックオン）作用によって基
体２と炭素系膜６との界面付近に両者の混合層が形成さ
れることが期待でき、これによって基体２に対する炭素
系膜６の密着性が一層良くなる。It can be expected that a mixed layer of the base 2 and the carbon-based film 6 is formed in the vicinity of the interface between the base 2 and the carbon-based film 6 by the action of the ions 14 being knocked on, which further improves the adhesion of the carbon-based film 6 to the base 2. .
炭素20の蒸着を併用するため、CDV法に比べて短時
間で大きな膜厚が得られ、炭素系膜６の形成効率が良
い。Since vapor deposition of carbon 20 is also used, a large film thickness can be obtained in a short time as compared with the CDV method, and the formation efficiency of the carbon-based film 6 is good.
同一の真空容器内で炭化層４の形成と連続して炭素
系膜６を形成することができるため、大気に汚染される
心配が全く無く、しかも処理効率も良い。Since the carbon-based film 6 can be formed continuously with the formation of the carbonized layer 4 in the same vacuum container, there is no fear of being polluted by the atmosphere and the processing efficiency is good.
以上のようにこの発明によれば、イオン注入によって
基体の表層部に当該基体材料の炭化層を予め形成するよ
うにしたので、ステンレスを含む様々な種類の基体の表
面に、非晶質炭素膜やダイヤモンド膜等の炭素系膜を安
定にかつ密着性良く形成することができるようになる。As described above, according to the present invention, the carbonized layer of the base material is preliminarily formed on the surface layer portion of the base by ion implantation, so that the amorphous carbon film is formed on the surface of various types of bases including stainless steel. It becomes possible to form a carbon-based film such as a diamond film or the like stably and with good adhesion.
第１図は、この発明に係る方法を実施する装置の一例を
示す概略図である。第２図は、炭素系膜等が形成された
基体の表面付近を部分的に示す概略断面図である。 ２……基体、４……炭化層、６……炭素系膜、12……イ
オン源、14……イオン。FIG. 1 is a schematic diagram showing an example of an apparatus for performing a method according to the present invention. FIG. 2 is a schematic cross-sectional view partially showing the vicinity of the surface of the substrate on which the carbon-based film or the like is formed. 2 ... Substrate, 4 ... Carbonized layer, 6 ... Carbon film, 12 ... Ion source, 14 ... Ion.
Claims (1)
中で当該基体に対して炭素イオンおよび炭素を含む物質
のイオンの内の少なくとも一種を注入することによって
当該基体の表層部に当該基体材料の炭化層を予め形成
し、次いでその上に前記炭素系膜を形成することを特徴
とする炭素系膜の形成方法。1. When forming a carbon-based film on the surface of a substrate, by injecting at least one of carbon ions and ions of a substance containing carbon into the substrate in a vacuum, the surface layer of the substrate is injected. A method for forming a carbon-based film, which comprises forming a carbonized layer of the base material in advance and then forming the carbon-based film thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32100487A JPH086171B2 (en) | 1987-12-18 | 1987-12-18 | Method for forming carbon-based film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32100487A JPH086171B2 (en) | 1987-12-18 | 1987-12-18 | Method for forming carbon-based film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01162757A JPH01162757A (en) | 1989-06-27 |
| JPH086171B2 true JPH086171B2 (en) | 1996-01-24 |
Family
ID=18127713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32100487A Expired - Fee Related JPH086171B2 (en) | 1987-12-18 | 1987-12-18 | Method for forming carbon-based film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH086171B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012012706A (en) * | 2005-05-18 | 2012-01-19 | Toyota Motor Corp | Carburized metal material |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455081A (en) * | 1990-09-25 | 1995-10-03 | Nippon Steel Corporation | Process for coating diamond-like carbon film and coated thin strip |
| US5204210A (en) * | 1990-12-07 | 1993-04-20 | Xerox Corporation | Method for the direct patterning of diamond films |
-
1987
- 1987-12-18 JP JP32100487A patent/JPH086171B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012012706A (en) * | 2005-05-18 | 2012-01-19 | Toyota Motor Corp | Carburized metal material |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01162757A (en) | 1989-06-27 |
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