JPH087880B2 - Phase change recording medium - Google Patents
Phase change recording mediumInfo
- Publication number
- JPH087880B2 JPH087880B2 JP62326238A JP32623887A JPH087880B2 JP H087880 B2 JPH087880 B2 JP H087880B2 JP 62326238 A JP62326238 A JP 62326238A JP 32623887 A JP32623887 A JP 32623887A JP H087880 B2 JPH087880 B2 JP H087880B2
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- phase change
- recording
- layer
- change recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は相変化記録媒体に関する。詳しくは記録層と
して相変化形の記録層を用いた光記録媒体に関する。The present invention relates to a phase change recording medium. More specifically, it relates to an optical recording medium using a phase-change recording layer as a recording layer.
（従来の技術とその課題） 相変化記録媒体はレーザービームによる加熱により媒
体の結晶相が変化する（例えば、結晶→アモルファス）
効果を用いて情報を記録し、各結晶相の光反射率の違い
から情報を読み出すことができる。(Prior art and its problems) In a phase change recording medium, the crystal phase of the medium changes by heating with a laser beam (for example, crystal → amorphous)
Information can be recorded by using the effect, and the information can be read from the difference in light reflectance of each crystal phase.
相変化記録媒体には書き込み可能型（ライトワンス
型）と書き換え可能型（イレーサブル型）の両方があ
り、近年進歩の著しい記録媒体である。The phase change recording medium includes both a writable type (write-once type) and a rewritable type (erasable type), and is a recording medium that has made remarkable progress in recent years.
相変化記録媒体のキャリアレベル（CL）は記録状態と
消去状態の光反射率のコントラストが違うほど大きくな
る。コントラストを上げる為に記録層を薄くし、その下
に反射層を設け光の干渉効果を利用する方式が提案され
ている（例えば昭和62年秋季応用物理学会18p−ZP−1
2）。The carrier level (CL) of the phase change recording medium increases as the contrast of the light reflectance in the recorded state and that in the erased state differ. A method has been proposed in which the recording layer is thinned to increase the contrast, and a reflection layer is provided under the recording layer to utilize the light interference effect (for example, the Autumn Applied Physics Society 18p-ZP-1 in 1987).
2).
干渉効果を強く出すには反射層の光反射率を高くする
必要があるが、反射率の高い物質（例えば、Au,Ag,Cu,A
l等）を用いると、一般に熱伝導等が大きく感度の低下
をもたらす。It is necessary to increase the light reflectance of the reflective layer in order to obtain a strong interference effect, but a material with a high reflectance (eg Au, Ag, Cu, A
The use of (l etc.) generally causes large heat conduction and the like, resulting in a decrease in sensitivity.
（課題を解決する為の手段） 本発明者等は上述の欠点を克服した高コントラスト、
高感度の相変化記録媒体を提供することを目的に鋭意検
討した結果、本発明に到達したものである。(Means for Solving the Problems) The inventors of the present invention have achieved a high contrast that overcomes the above-mentioned drawbacks,
As a result of intensive studies aimed at providing a high-sensitivity phase change recording medium, the present invention has been achieved.
すなわち本発明の要旨は、基板上に設けられた記録層
の結晶状態を熱的に変化させて光反射率を変えることに
より記録を行なう相変化記録媒体において、記録層上に
反射層を設けてなり、該反射層をAl1-xMx（ＭはTa,Ti,Z
r,V,Pt,Mo,Crから選ばれる少なくと１種の元素、ｘは0.
01〜0.15の数）によって形成したことを特徴とする相変
化記録媒体に存する。That is, the gist of the present invention is to provide a reflective layer on the recording layer in a phase-change recording medium for recording by thermally changing the crystal state of the recording layer provided on the substrate to change the light reflectance. And the reflective layer is Al 1-x M x (M is Ta, Ti, Z
At least one element selected from r, V, Pt, Mo, Cr, x is 0.
(Number of 01 to 0.15).
（発明の構成） 以下、本発明を更に詳細に説明する。Hereinafter, the present invention will be described in more detail.
本発明による相変化形光記録媒体は、真空蒸着やスパ
ッタリングなど通常の薄膜形成装置により作成される。The phase change type optical recording medium according to the present invention is prepared by a usual thin film forming apparatus such as vacuum deposition or sputtering.
基板としては、通常、PMMAやPC（ポリカーボネート）
のような低熱伝導性材料が該基板への熱の散逸を防ぐ目
的からみて望ましいが、ガラス基板など熱伝導性の良い
ものを用いる場合は、基板上に感光性樹脂などの有機物
膜を形成する事により、熱の散逸を防ぐ事ができる。As a substrate, usually PMMA or PC (polycarbonate)
A low heat conductive material such as is preferable from the viewpoint of preventing the dissipation of heat to the substrate, but when using a material having good thermal conductivity such as a glass substrate, an organic film such as a photosensitive resin is formed on the substrate. This can prevent the dissipation of heat.
基板の厚みは１〜2mm程度が一般的であり、通常約1.2
mm程度である。The thickness of the board is generally about 1 to 2 mm, usually about 1.2 mm.
It is about mm.
本発明においては基板上に記録層、反射層を順次設け
る。記録層としてはGeTe系、InSb系、TeO2系等が用いら
れる。記録層の膜厚は記録前、記録後の屈折率、及び反
射層の屈折率から最もコントラストがとれるように最適
化されるが、通常200Å〜600Åである。本発明において
は反射層としてはTa,Ti,Zr,V,Pt,Mo,Crから選ばれる一
種以上の元素を含有するAl合金を用いる。添加金属の含
有量は１〜15at％（原子％）、さらに好ましくは２〜10
at％である。好ましい添加金属は上記のうち、Ta,Ti,Zr
である。反射層の膜厚は反射率が低下せず、しかも感度
が著しく低下しない範囲で選ばれるが、300Å〜500Å程
度が好ましい。干渉効果をさらに強める為記録層に接し
てその片面、または両面に高屈折率の誘電体を設けるこ
とも効果的である。誘電体としては例えば、ZnS,Ta2O5,
SiO2,SiO,ZrO2,Si3N4,AlN等が用いられる。In the present invention, a recording layer and a reflective layer are sequentially provided on the substrate. GeTe, InSb, TeO 2 or the like is used as the recording layer. The thickness of the recording layer is optimized to obtain the best contrast from the refractive index before and after recording and the refractive index of the reflective layer, but it is usually 200Å to 600Å. In the present invention, an Al alloy containing one or more elements selected from Ta, Ti, Zr, V, Pt, Mo and Cr is used as the reflective layer. The content of the added metal is 1 to 15 at% (atomic%), more preferably 2 to 10
at%. Of the above, preferred additive metals are Ta, Ti, Zr.
Is. The thickness of the reflective layer is selected within a range in which the reflectance is not lowered and the sensitivity is not remarkably lowered, but it is preferably about 300Å to 500Å. In order to further enhance the interference effect, it is also effective to provide a high refractive index dielectric on one or both sides of the recording layer in contact with the recording layer. As the dielectric, for example, ZnS, Ta 2 O 5 ,
SiO 2 , SiO, ZrO 2 , Si 3 N 4 , AlN or the like is used.
尚、誘電体を記録層の片面または両面に設ける場合は
記録層の膜圧は誘電体を含めた全体の干渉効果によって
決定される。When the dielectric is provided on one side or both sides of the recording layer, the film pressure of the recording layer is determined by the overall interference effect including the dielectric.
（実施例） 以下、実施例に基づいて本発明を具体的に説明するが
本発明はその要旨を越えない限り以下の実施例を限定さ
れない。(Examples) Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to the following examples unless the gist thereof is exceeded.
実施例１ 基板にはポリカーボネートのディスクを用いその上に
RFスパッタリング法により、SiO2層を1000Å成膜した。
その上に記録層としてGeターゲット上にTe,Biチップを
配値してスパッタリングにより形成した。成膜速度は10
Å/secとし、400Åの膜厚に成膜した。記録層の組成はG
e50Te50Bi3であった。次に反射層として、Alターゲット
上にTaチップを配して300ÅのAlとTaとの合金を成膜し
た。反射層中のTa量はTaチップ数によって調整した。ま
た比較的としてAlのみの反射層を持つ同様のディスクを
作成した。Example 1 A polycarbonate disk was used as a substrate and
A 1000 Å SiO 2 layer was formed by RF sputtering.
On top of that, Te and Bi chips were placed as a recording layer on a Ge target and formed by sputtering. Deposition rate is 10
The film was formed at a film thickness of 400 Å at Å / sec. The composition of the recording layer is G
It was e 50 Te 50 Bi 3 . Next, as a reflective layer, a Ta chip was arranged on an Al target to form a 300 Å alloy of Al and Ta. The amount of Ta in the reflective layer was adjusted by the number of Ta chips. Also, a comparatively similar disc having a reflective layer of only Al was created.
以上のように作成したディスクに1800rpm、0.5MHz du
ty50％の条件で記録を行なったところ、第１図のような
結果を得た。なお、最適記録パワーは２次歪C2とキャリ
アレベルＣの比C2/Cが最小になる記録パワーとした。1800 rpm, 0.5 MHz du on the disc created as above
When recording was performed under the condition of 50% ty, the results shown in FIG. 1 were obtained. The optimum recording power was the recording power at which the ratio C 2 / C between the secondary distortion C 2 and the carrier level C was minimized.
第１図から明らかなようにAlにTaを少量添加すること
によりキャリアレベルを低下させずに感度を上げること
が可能である。As is clear from FIG. 1, by adding a small amount of Ta to Al, it is possible to increase the sensitivity without lowering the carrier level.
同様な効果はAlとTa以外にAlとTi,Zr,V,Pt,Mo,Cr等の
合金を用いた場合においても認められた。Similar effects were observed when Al and alloys of Ti, Zr, V, Pt, Mo, Cr, etc. were used in addition to Al and Ta.
（発明の効果） 本発明による相変化記録媒体はC/N比、感度共に良好
な特性を示す。(Effect of the Invention) The phase change recording medium according to the present invention exhibits good characteristics in both C / N ratio and sensitivity.
第１図は反射膜中のTa含有量と最適記録パワー及び、キ
ャリアレベルの相関を示したものである。FIG. 1 shows the correlation between the Ta content in the reflective film, the optimum recording power, and the carrier level.
Claims (1)
的に変化させて光反射率を変えることにより記録を行な
う相変化記録媒体において、記録層上に反射層を設けて
なり、該反射層をAl1-xMx（ＭはTa,Ti,Zr,V,Pt,Mo,Crか
ら選ばれる少なくとも１種の元素、ｘは0.01〜0.15の
数）によって形成したことを特徴とする相変化記録媒
体。1. A phase change recording medium for performing recording by thermally changing the crystalline state of a recording layer provided on a substrate to change the light reflectance, wherein a reflecting layer is provided on the recording layer. The reflective layer is formed of Al 1-x M x (M is at least one element selected from Ta, Ti, Zr, V, Pt, Mo and Cr, and x is a number of 0.01 to 0.15). Phase change recording medium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62326238A JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62326238A JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10300614A Division JPH11316978A (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
| JP10300611A Division JPH11316975A (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
| JP10300612A Division JP3137093B2 (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
| JP10300613A Division JPH11316977A (en) | 1998-10-22 | 1998-10-22 | Phase change recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01169751A JPH01169751A (en) | 1989-07-05 |
| JPH087880B2 true JPH087880B2 (en) | 1996-01-29 |
Family
ID=18185534
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62326238A Expired - Lifetime JPH087880B2 (en) | 1987-12-23 | 1987-12-23 | Phase change recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH087880B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2532600B2 (en) * | 1988-08-19 | 1996-09-11 | 松下電器産業株式会社 | Information carrier disc |
| JP2670846B2 (en) * | 1989-04-07 | 1997-10-29 | 富士写真フイルム株式会社 | Optical recording medium |
| JP2507132B2 (en) * | 1990-05-07 | 1996-06-12 | 三菱化学株式会社 | Play-only optical disc |
| JP2928330B2 (en) * | 1990-05-11 | 1999-08-03 | 株式会社神戸製鋼所 | Melting material for sputtering target for optical media |
| US5500301A (en) * | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
| JPH10142625A (en) * | 1996-11-07 | 1998-05-29 | Vacuum Metallurgical Co Ltd | Manufacture of liquid crystal display conductive part, and sputtering target used for manufacture thereof |
-
1987
- 1987-12-23 JP JP62326238A patent/JPH087880B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01169751A (en) | 1989-07-05 |
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