JPH088280B2 - Film material for producing film carrier and method for producing the same - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a film material for producing a film carrier and a method for producing the film material, and a film material which is a material for producing a film carrier for mounting a semiconductor chip, And a method for producing the film material.

[Conventional technology]

As a package structure of semiconductor chips such as IC and LSI,
There is a so-called film carrier system. this is,
A film carrier is manufactured by forming a conductor metal layer such as Cu foil on a film tape and etching the conductor metal layer to form a lead pattern, and a semiconductor chip is bonded and connected to the lead pattern on the film carrier. After that, the film carrier is punched and separated for each individual lead pattern to obtain a film carrier chip on which a semiconductor chip is mounted.

5 and 6 show the structure of a typical film carrier chip. First, FIG. 5 shows a bonding wire type film in which a semiconductor chip and a lead pattern of a film carrier are connected by a bonding wire. The carrier chip is shown. A lead pattern 20 made of a conductor metal layer such as Cu is formed in a predetermined pattern on a film 10 made of a polyimide resin or the like. The semiconductor chip 30 is mounted and fixed on the film 10 by means such as soldering or adhesion, and then each electrode and the lead pattern 20 are electrically connected by a bonding wire 40. The periphery of the semiconductor chip 30 is covered with the sealing resin 50.

Next, FIG. 6 shows a bump type film carrier chip in which the semiconductor chip and the lead pattern of the film carrier are connected by bumps. The difference from the structure of FIG. 5 is that the lead pattern 20 is extended to each electrode position on the back surface of the semiconductor chip 30, and a bump 70 made of Au, solder or the like is formed on the extended lead pattern 20. The lead pattern 20 and each electrode are electrically connected via the semiconductor chip 30 and the semiconductor chip 30 itself is fixed to the film 10.

Comparing both, in the case of wire bonding type,
It takes time and effort to connect the individual electrodes of the semiconductor chip 30 and the lead pattern 20 with the bonding wires 40, and in order to perform the wire bonding work, it is necessary to secure a sufficient distance between the electrodes. There is a problem that the plane size of the whole 30 becomes large. Further, since the bonding wire 40 is projected onto the surface of the semiconductor chip 30, the bonding wire 40
In order to completely cover the whole, the outer shape of the sealing resin 50 becomes large, and the bulk dimension of the entire film carrier chip becomes large.

On the other hand, in the case of the bump type, if the bumps 70 are sandwiched between the electrodes of the semiconductor chip 30 and the lead pattern 20 and they are collectively heated and pressed, all the connections can be achieved at once, which is extremely efficient. Can be connected to. Further, since the electrodes can be connected even if the distance between the electrodes is small, the electrode distance, that is, the area of the semiconductor chip 30 can be reduced. The bump 70 is hidden on the back surface of the semiconductor chip 30 and has a slight thickness, so that the bump 70 also becomes thinner in the thickness direction. As a result, the overall size of the film carrier chip can be reduced.

For the above reasons, the bump type is used for a small package because it is superior to the wire bonding type.

[Problems to be Solved by the Invention]

However, the bump type film carrier chip has a drawback that it is not flexible with respect to the electrode arrangement of the semiconductor chip 30.

That is, the lead pattern of the film carrier chip
Out of 20, the outer lead portion 21 for connecting to an external circuit such as a wiring board can be used as it is for various mounting forms if it is adjusted to a certain standard dimension. However, since the electrode arrangement of the semiconductor chip 30 is completely different depending on the structure of each semiconductor chip 30, the inner lead portion 22 of the lead pattern 20 is not included in the semiconductor chip 30.
Must be formed according to the electrode arrangement, that is, the arrangement of the bumps 70.

Therefore, the film 10 provided with the lead pattern 20 having the inner lead portion 22 having a fixed pattern, that is, the film carrier cannot be used for mounting the semiconductor chips 30 having different electrode arrangements, and the electrode arrangement of the semiconductor chips 30 is changed every time. First, a film carrier having lead patterns 20 having different formation patterns must be manufactured. Then, when the formation pattern of the lead pattern 20 changes, it is necessary to prepare a mask or a mold for etching for each pattern, which increases the device cost and changes the setup of the device each time the pattern is changed. There is a problem that it has to be done and it takes a lot of work time.

In particular, in recent years, the number of electrodes of semiconductor chips has increased more and more, and the production of various kinds in small quantities has progressed.Therefore, a long lead time for manufacturing an etching mask is set every time the kinds of products are changed. In addition, the increase in initial cost is a very serious problem.

Therefore, an object of the present invention is to provide a film carrier for manufacturing a bump-type film carrier chip suitable for miniaturization of semiconductor chips and efficiency of mounting work,
A film material for manufacturing a film carrier that can easily cope with a change in electrode arrangement of a semiconductor chip,
Another object of the present invention is to provide a method for producing this film material.

[Means for solving the problem]

In order to solve the above problems, the inventors of the present application first
A film material for manufacturing a film carrier as described below and a method for manufacturing a film carrier using this film material have been invented and applied for a patent.

The film material for producing a film carrier according to the invention of the prior application is an inner lead in which only the outer lead portion of the lead pattern is patterned and the inner lead portion is not patterned, and the whole is left as a conductor metal layer. It is a forming part. The target film carrier is manufactured by patterning a predetermined inner lead part by removing part of the inner lead forming part by laser processing according to the electrode arrangement of the semiconductor chip to be mounted on this film material. It can be done. According to the present invention, the film material to be manufactured in advance can be manufactured in batch with the same shape regardless of the electrode arrangement of the semiconductor chip, and even if the electrode arrangement of the semiconductor chip is changed, the laser machining program can be changed. It is possible to exhibit excellent effects such as being able to easily cope with the above.

However, the above-mentioned prior invention also has the following problems. In the pattern formation of the inner lead portion by laser processing, there is a problem that the processing efficiency greatly varies depending on the properties of the conductor metal layer forming the inner lead portion. For example, copper, which is generally used as a conductor metal layer, has a drawback that it cannot perform high-speed processing with laser light and has low processing efficiency because of its high reflectance of laser light. On the other hand, when Al or the like, which has a low reflectance of laser light and a high processing efficiency, is used as the conductor metal layer, there is a problem that it is difficult to solder the terminal portion at the tip of the outer lead portion to an external circuit.

Therefore, by further improving the above-mentioned prior invention, a film material for manufacturing a film carrier, which can efficiently perform pattern formation of the inner lead portion by laser processing and can also perform good soldering connection of the outer lead portion to an external circuit. As a result of research on a method for producing this film material, the present invention described below was completed.

In the film material for producing a film carrier according to the invention of claim 1, each electrode of a semiconductor chip mounted on the film is connected to an inner lead portion of a lead pattern formed on the film via a bump. A film material for producing a film carrier consisting of: a lead pattern formed from a conductive metal layer on the film by pattern formation, wherein the outer lead portion whose pattern does not change depending on the electrode arrangement of the semiconductor chip to be mounted is , The inner lead portion which is pre-patterned and at least the soldering portion is made of copper and the pattern of which changes depending on the electrode arrangement of the semiconductor chip to be mounted is not patterned and has a reflectivity for laser light lower than that of copper. Inner lead left as a conductor metal layer made of metal And it has a generating unit.

A film material for a film carrier is one in which a lead pattern is formed by forming a conductor metal layer such as copper on the surface of a film tape made of a polyimide resin or the like, and then etching it into a predetermined pattern shape. The basic structure may be the same as that of a conventional film material for producing a conventional film carrier.

According to the present invention, of the lead pattern formation pattern, the outer lead portion for connection with the external circuit is formed with a predetermined pattern as in the conventional case.
Further, at least the soldering portion for connecting to the external circuit is made of copper in the outer lead portion. If the soldering portion is copper, the other portions may be made of any conductive metal. For example, a part of the outer lead portion may be formed of a conductor metal forming the inner lead portion described later or other various conductor metals. Further, the conductor metal forming the inner lead portion may be formed up to the outer lead portion and the surface thereof may be covered with copper. Of course, the entire outer lead portion may be made of copper, or may have a laminated structure of copper and a metal other than copper. Furthermore, in order to further improve the solder connectivity in the soldering part, only the soldering part of the outer lead part made of copper as described above should be placed on the copper.
It is more preferable if Au or Sn is plated.

Next, the inner lead portion connected to the electrode of the semiconductor chip is made of a conductive metal having a lower laser reflectivity than copper forming the outer lead portion and having good laser processability. When the reflectance with respect to the laser light is low, it means that the laser light has good absorptivity and can be easily processed. Therefore, the moving irradiation of the laser light can be performed at high speed, and the processing efficiency is increased. Such conductive metals having good laser processability include Al, Sn, Ni and Zn.
Etc. The reflectance of various metals with respect to the laser beam varies depending on the wavelength of the laser beam, but for example, the wavelength of YAG laser often used for ordinary laser processing is about 1.06 μm. On the other hand, the reflectance of copper and the metal with respect to light having a wavelength of 0.9 to 11 μm is Al = 73.3%, Sn = 54.0%, Ni = 72.0%, Zn = 49.0% with respect to copper 90.1%.
Therefore, all have low reflectance and good laser processability. In addition to the above metals, the wavelength of the laser light used,
Alternatively, in consideration of characteristics other than laser processability such as electrical performance and bump bondability, it is possible to appropriately select and use from among various conductive metals.

The inner lead portion made of a conductor metal having good laser processability as described above is not formed on a pattern like a conventional film carrier, but is left as an inner lead formation portion entirely covered with a conductor metal layer. . Here, the inner lead portion means a portion whose pattern needs to be changed according to the electrode arrangement of the semiconductor chip, and even if it is the inner portion of the lead pattern, the pattern is changed depending on the electrode arrangement of the semiconductor chip. As for the portions that do not need to be changed, the pattern is formed in the same manner as the outer lead portion.

The film material provided with the lead pattern including the outer lead portion and the inner lead forming portion as described above can be transported, stored, or sold without being subjected to the pattern formation of the inner lead portion.

Next, a method for producing a film carrier using the above film material will be described.

The inner lead pattern is formed according to the electrode arrangement of each semiconductor chip to be mounted. The pattern formation of the inner lead portion is performed by laser processing. For the processing pattern of laser processing, the NC processing control device or the like may be used to control the irradiation of the laser beam by a program set in advance in accordance with the electrode arrangement of the semiconductor chip. Specific laser processing equipment and processing conditions are
This can be performed in the same manner as laser processing in ordinary semiconductor manufacturing, wiring circuit manufacturing, and the like.

The film carrier on which the pattern formation of the inner lead portion is completed is similar to the ordinary semiconductor chip mounting method, a bump forming step for each electrode, a bonding bonding step via bumps between the inner lead portion and the electrode of the semiconductor chip, A desired film carrier chip is manufactured by performing a resin sealing process, a punching separation process into individual film carrier chips, and the like.

In the method for producing a film material for producing a film carrier according to the invention of claim 2, in producing the film material for producing a film carrier according to claim 1, a non-copper metal having a lower reflectance for copper and laser light than copper. The copper clad material is attached to the film with copper on the front side, and the outer lead part and inner lead forming part are patterned to perform etching to etch both metals. However, the non-copper metal is etched, and the non-copper metal layer of the inner lead forming portion is exposed by performing selective etching without etching.

As the non-copper metal whose reflectance to the laser light is lower than that of copper, those capable of producing a clad material with copper from the above-mentioned conductor metals are used. As a method for producing a clad material of copper and a non-copper metal, a usual clad material producing means can be adopted. A method for forming a laminated material by pasting a clad material on a film material also uses the same method as the means for forming a conductor metal layer on the film material in a conventional ordinary film carrier.

The etching for patterning the outer lead portion and the inner lead forming portion uses an etching means capable of etching both copper and non-copper metal of the clad material. Therefore, the etching solution and the processing conditions to be used are selected and implemented depending on the combination of copper and non-copper metal. Specifically, the same means as that used in the normal circuit forming technique can be applied.

At the stage where the above steps are completed, there is no problem in the outer lead portion because copper is exposed on the surface including the soldering portion, but in the inner lead forming portion, the non-copper metal that constitutes the inner lead forming portion Is covered with copper.

Therefore, the copper is etched but the non-copper metal is not etched to perform selective etching to expose the non-copper metal layer of the inner lead forming portion. At this time, in the outer lead portion, at least a portion requiring a copper layer, including a soldering portion, is covered with an appropriate resist layer so that the copper layer is etched. As a specific etching means, a selective etching means in a usual circuit forming technique can be applied.

In the film material obtained by the above method, on the surface of the film material, a non-copper metal layer is formed to cover the entire outer lead portion and inner lead forming portion,
The copper layer covers the non-copper metal layer at least in the soldering portion of the outer lead portion.

In the method for producing a film material for producing a film carrier according to the invention described in claim 3, in producing the film material for producing a film carrier according to claim 1, a non-copper metal layer having a reflectance for laser light lower than that of copper is used. After etching the laminated material formed on the film to pattern the outer lead portion and the inner lead formation portion, a copper layer is laminated on at least the soldering portion of the outer lead portion.

To produce a laminated material by forming a non-copper metal layer having a reflectance for laser light lower than that of copper on a film, a foil made of the non-copper metal is produced in advance, and the non-copper metal foil is used as a film. A method of sticking on the above, a method of plating a non-copper metal on a film are used, and in addition, a sputtering method, a vacuum deposition method, and other metal thin film forming means can be adopted.

As a method of etching the non-copper metal layer on the film, a usual circuit forming means can be applied as it is. In this way, the outer shapes of the outer lead portion and the inner lead forming portion are formed. The inner lead portion may be a non-copper metal as it is, but a copper layer is laminated and formed on at least the soldering portion of the outer lead portion. As the copper layer forming means, ordinary thin film forming means such as plating or sputtering can be applied. In the step of forming the copper layer, the surface of the inner lead forming portion is not covered with the copper layer,
An appropriate resist layer is formed so that the copper layer is formed only on the necessary portions of the outer lead portion.

Also in the film material obtained as described above, the non-copper metal layer is formed on the surface of the film over the entire outer lead part and the inner lead forming part, as in the case of the above-mentioned invention of claim 2. At the same time, the non-copper metal layer is covered with the copper layer at least in the soldering portion of the outer lead portion.

[Action]

According to the invention described in claim 1, the pattern formation of the lead pattern on the film carrier includes the outer lead portion which is not changed by the electrode arrangement of the semiconductor chip, and the inner lead portion which is changed every time the electrode arrangement is changed. Divided into
Since only the outer lead pattern is formed, the same film material can be used regardless of the electrode arrangement of the semiconductor chips, and mass production can be efficiently performed. Then, with respect to such a film material, if only the pattern formation of the inner lead portion is processed by laser processing for each semiconductor chip having a different electrode arrangement, the electrode arrangement of the semiconductor chip can be changed. Can be handled very easily.

In other words, for the outer lead portion where the formation pattern is not changed, the pattern is formed efficiently and economically by a normal circuit forming means such as an etching method, and only the inner lead portion where the formation pattern is changed is processed. If you do laser processing that can change the pattern freely,
It is possible to easily cope with changes in the electrode arrangement of the semiconductor chip without lowering the productivity of the film carrier, and the film material for manufacturing the film carrier is extremely flexible.

Further, among the outer lead parts, at least the soldering part which is required to have good solder connectability is formed of copper which is excellent as the material of the conductor circuit and also has good solder connectability. For the inner lead forming part that is capable of exhibiting excellent characteristics and requires patterning of the inner lead part by laser processing, use a non-copper metal with low laser light reflectance and good laser processability. As a result, the processing efficiency can be improved.

〔Example〕

Next, the present invention will be described in detail below with reference to the drawings illustrating an embodiment. It should be noted that the same reference numerals are given to the structural parts common to the structure of the conventional example described above, and the duplicated description will be omitted.

FIG. 1 shows a film tape 10a which is a film material for manufacturing a film carrier. The long film tape 10a has sprocket holes 11, 11 formed at both ends of the width method at regular intervals. There is.

A lead pattern 20 for mounting a semiconductor chip is formed in the center of the surface of the film tape 10a. The lead pattern 20 is formed by forming a conductive metal layer such as copper on the entire surface of the film tape 10a and then removing the conductive metal layer into a predetermined pattern by etching. The lead pattern 20 is composed of a strip-shaped outer lead portion 21 extending in all directions, and a regular square inner lead forming portion 23 located in the center of the outer lead portion 21. The structure of the outer lead portion 21 is
This is similar to the case of a conventional normal film carrier. Unlike the conventional case, the inner lead forming portion 23 is not patterned for each individual electrode, but is formed integrally and continuously. That is, when the electrode arrangement of the semiconductor chip 30 is changed, the inner lead forming portion 23 is provided so as to cover the entire places where the individual inner lead portions may be arranged. At the center of the inner lead forming portion 23, a small square-shaped space portion 24 is formed. This is because in the normal semiconductor chip 30, the electrodes are set in the peripheral portion of the plane shape and the electrode is rarely set in the central portion, so the inner lead portion is not formed to the central portion either. In advance, the space part 24 in the central part
By forming the above, it is possible to reduce the trouble of processing the inner lead portion described later.

Of the outer lead portion 21 and the inner lead forming portion 23 having the above shapes, the copper layer m ₁ is exposed on the surface of the outer lead portion 21, and the non-copper metal layer is formed on the surface of the inner lead forming portion 23. The Al layer m _{2 to} be exposed is exposed.

When the lead pattern 20 as described above is formed, the production of the film tape 10a, that is, the film material for producing the film carrier is completed, and the film material is provided for transportation, storage or sale in this state.

FIG. 2 is a process of manufacturing a film material by forming a lead pattern 20 on a film material such as a film tape 10a.
Also, the steps of mounting the semiconductor chip 30 on the manufactured film material are schematically shown.

First, as shown in FIG. 2A, an Al layer m ₂ and a copper layer m ₁ are laminated on the surface of the film 10. Specifically, in advance
A clad material composed of the Al layer m ₂ and the copper layer m ₁ is manufactured in advance, and the clad material is pasted and laminated on the surface of the film 10.

As shown in FIG. 2B, a lead pattern 20 made of a conductive metal layer is formed. Specifically, after using the etching solution capable of etching both the Al layer m ₂ and the copper layer m ₁ , the outer lead portion 21 and the inner lead forming portion 23 are pattern-etched, then only the copper layer m ₁ is removed. To eat
The Al layer m ₂ is removed using an etching solution that cannot be etched to remove the copper layer m ₁ covering the Al layer m ₂ of the inner lead portion forming portion 23. In this way, the film material in the completed state shown in FIG. 1 is obtained.

Next, according to the electrode arrangement of the semiconductor chip 30 to be mounted, the inner lead forming portion of the lead pattern 20.
23 is patterned. As shown in FIG. 2C, a laser beam R is applied from above the lead pattern 20 to remove the non-copper metal layer m ₂ of the inner lead forming portion 23. By controlling the irradiation pattern of the laser beam R, the inner lead portion 22 having a desired pattern shape can be formed.

FIG. 3 shows the structure of the inner lead portion 22 formed in this way, and is followed by each outer lead portion 21 arranged at a relatively wide constant interval, followed by a thin wedge-shaped inner lead. The portion 22 is provided, and the tip of the inner lead portion 22 is arranged at each electrode position on the back surface of the semiconductor chip 30. Inner lead part 22
Is formed of the Al layer m ₂ and the outer lead part
In _No. 21, the copper layer m ₁ covers the Al layer m ₂ , so the copper layer is on the surface.
m ₁ will be exposed. As described above, a film carrier in which the entire lead pattern 20 is patterned can be manufactured.

FIG. 2 (d) shows a state in which a semiconductor chip is mounted on the film carrier. The semiconductor chip 30 is placed on the inner lead portion 22 via the bump 70, and the semiconductor chip 30 is pressed and heated to apply the semiconductor. Each electrode of the chip 30 and each inner lead portion 22 are connected and fixed. Specific bump connecting means and steps are carried out in the same manner as in the conventional method for manufacturing a conventional bump type film carrier chip. At this time, if Au is used for the bump 70, the inner lead portion 22 of the
Since the Al layer m ₂ and the Au bump 70 have extremely good bondability, the mounting connection of the semiconductor chip 30 is easy and the connection performance is also good.

After that, the mounting portion of the semiconductor chip 30 is sealed with resin, and the film tape 10 is formed on the outer peripheral portion of the lead pattern 20.
It is separated from the peripheral part of a by punching, or the lead pattern 20
Among them, the bending of the outer lead portion 21 so as to be easily connected to the outer peripheral circuit is performed in the same manner as in the conventional method for manufacturing a conventional film carrier chip.

〔The invention's effect〕

According to the film material for manufacturing the film carrier according to the present invention described above, the inner lead portion for bump connection, which needs to be changed every time the electrode arrangement of the semiconductor chip is changed, is not patterned, and the entire conductor is Since the inner lead forming portion remains covered with the metal layer, a common film material can be applied to various semiconductor chips having different electrode arrangements. Therefore, only one type of manufacturing apparatus for the etching mask, the mold, etc. is required, and each time the electrode arrangement of the semiconductor chip is changed, the time and labor for changing the etching mask can be saved and the cost can be significantly reduced. This is extremely effective in improving productivity and reducing production cost.

The pattern formation of the inner lead part is performed by laser processing according to the electrode arrangement of the semiconductor chip. In this laser processing, a free processing pattern can be obtained by an NC control program, etc. Then, only by changing the processing program so as to correspond to the electrode arrangement, it is possible to easily and quickly cope with it, and the flexibility becomes extremely high. Moreover, since laser processing is required only in the narrow area of the inner lead portion, there is no fear of impairing the overall productivity or economy without increasing the overall processing time or labor.

Further, copper is used as the conductor metal forming at least the soldering portion of the outer lead portion, and a non-copper metal having a reflectance of laser light lower than that of copper is used as the conductor metal layer forming the inner lead forming portion. The efficiency of inner lead processing by laser processing is high and the productivity is excellent, and at the same time, the connection performance by soldering with an external circuit is also excellent. As the non-copper metal that constitutes the inner lead portion, if a conductor metal that has good bondability with the bump that joins the electrode of the semiconductor chip to the inner lead portion is selected, compared to joining the inner lead portion made of copper. The mounting connection of the semiconductor chip is easy and the connection performance is improved.

As a result, although the film carrier is a bump type film carrier that is suitable for high density electrode arrangement and miniaturization of semiconductor chips, the electrode arrangement of semiconductor chips is as flexible as or better than the conventional wire bonding type. It is possible to manufacture a film carrier equipped with the above, and at the same time, it is possible to easily and efficiently manufacture the film carrier such as laser processing of the inner lead part, and at the same time, connect the outer lead part to the external circuit by soldering, etc. The performance of the manufactured film carrier will also be excellent, and it will greatly contribute to the expansion of demand and application of film carrier chips.

[Brief description of drawings]

FIG. 1 is a plan view of a film material before patterning an inner lead portion, showing an embodiment of the present invention, and FIGS. 2 (a) to 2 (d) are schematic cross-sectional views showing a sequential manufacturing process of a film carrier. , FIG. 3 is a plan view of a film carrier in which a pattern of the inner lead portion is formed, FIG. 4 is a sectional view of a manufactured film carrier chip, and FIGS. 5 (a) and 5 (b) are conventional wire bonding. FIG. 5 (a) is a cross-sectional view, FIG. 5 (b) is a bottom view without the sealing resin, and FIGS. 6 (a) and 6 (b) are conventional bump-type film carrier chips. FIG. 6 (a) is a sectional view showing a film carrier chip, and FIG. 6 (b) is a bottom view showing a state in which a sealing resin is removed. 10 …… film, 20 …… lead pattern, 21 …… outer lead part, 22 …… inner lead part, 23 …… inner lead forming part, 30 …… semiconductor chip, 70 …… bump, m ₁
…… Copper layer, m ₂ …… Non-copper metal layer

Claims (3)

[Claims] 1. A film material for manufacturing a film carrier, wherein electrodes of a semiconductor chip mounted on the film are connected to inner lead portions of a lead pattern formed on the film via bumps. Out of the lead patterns formed by pattern formation from the conductive metal layer on the film, the outer lead portion whose pattern does not change depending on the electrode arrangement of the semiconductor chip to be mounted is pre-patterned and at least the soldering portion. Is made of copper, and the inner lead part whose pattern changes depending on the electrode arrangement of the mounted semiconductor chip is
A film material for manufacturing a film carrier, which is an inner lead forming portion that is not patterned and is left as a conductor metal layer made of a non-copper metal having a reflectance with respect to laser light lower than that of copper. 2. In producing the film material for producing a film carrier according to claim 1, a clad material of copper and a non-copper metal having a reflectance to laser light lower than that of copper is placed on the film with copper on the front side. The laminated material that is pasted is etched to etch both metals and patterned to form the outer lead and inner lead formation parts.Then, the copper is etched but the non-copper metal is not etched. And a method for producing a film material for producing a film carrier, which exposes a non-copper metal layer of an inner lead forming portion. 3. A film material for producing a film carrier according to claim 1, wherein a non-copper metal layer having a reflectance to laser light lower than that of copper is formed on the film by etching the laminate material. A method for producing a film material for producing a film carrier, comprising forming a pattern of an outer lead portion and an inner lead forming portion and then forming a copper layer on at least a soldering portion of the outer lead portion.