JPH09126929A - Capacitive pressure sensor - Google Patents

Abstract

(57) 【Abstract】 PROBLEM TO BE SOLVED: To reduce the number of manufacturing steps, reduce the manufacturing cost and downsize. An extension portion 4 is formed on a first electrode 4 of a first substrate 2.
a is extended. The second electrode 5 and the spacer 43 are formed on the second substrate 3. The spacer 43 surrounds the second electrode 5 and is electrically connected to the second electrode 5. The first and second substrates 2 and 3 are anodically bonded, and the first and second lead holes 9 and 10 are closed by the extension 4a of the first electrode 4 and the spacer 43. The lead portions 11 and 12 are formed in the first and second lead holes 9 and 10, and these lead portions 11 and 12 are formed in the extension portion 4a.
And the spacer 43 electrically.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a capacitance type pressure sensor having a diaphragm structure for measuring a change in pressure to be measured as a change in capacitance.

[0002]

2. Description of the Related Art An electrostatic capacitance type pressure sensor of this type for measuring a change in pressure to be measured as a change in electrostatic capacitance is disclosed in JP-A-4-9727 (hereinafter referred to as prior invention). It has been known.

FIGS. 16 (a), 16 (b) and 16 (c) are plan views showing a capacitance type pressure sensor according to the above-mentioned prior invention.
It is an AA line sectional view and a BB line sectional view. In the figure, a capacitance type pressure sensor 1 is provided with first and second substrates 2 and 3 whose outer peripheral portions are joined by a well-known anodic bonding technique, and a first and a second capacitors which form a capacitor between these substrates. The second electrodes 4 and 5 are formed.

The first substrate 2 is made of single crystal silicon, and has a diaphragm portion 7 which receives a pressure P to be measured by forming a concave portion 6 by etching or the like in the central portion of a joint surface 2a with the second substrate 3. It is provided. Also, the joint surface 2a
Includes a metal thin film 8 over the entire surface including the diaphragm portion 7.
Are formed by vapor deposition or sputtering.
The portion of the metal thin film 8 that covers the diaphragm portion 7 forms the first electrode 4, and the second electrode 5 of the second substrate 3 is formed.
And a small gap G is maintained, and they face each other in parallel.

The second substrate 3 is made of Pyrex glass or the like, and has the second electrode 5 and the first and second electrodes made of through holes.
The lead holes 9 and 10 are provided. On the inner surfaces of the first and second lead holes 9 and 10, first and second lead portions 11 and 12 made of a metal thin film are formed by vapor deposition or sputtering, respectively. The first lead portion 11 has the first thin film 8 on the first substrate 2 and the first lead portion 11.
Is electrically connected to the second electrode 5, and the second lead portion 12 is electrically connected to the second electrode 5 via the lid 13. The lid 13 is made of a silicon plate and closes the inner opening of the second lead hole 10. The surface of the lid 13 is
The extension 5a of the second electrode 5 covers the second electrode 5.
Since such a lid 13 forms a protrusion with the extension 5a, a recess 14 communicating with the recess 6 is formed in a portion of the first substrate 2 corresponding to the lid 13. This prevents the extension portion 5a from coming into contact with the metal thin film 8 and not electrically conducting.

FIGS. 17A to 17E are views showing the manufacturing process of the second substrate 3 described above. First, the first and second lead holes 9 and 10 are formed in the second substrate 3 ((a)
). Next, an n-type silicon plate 20 is prepared, boron is diffused on a part of the surface thereof by using a high-concentration diffusion source, and the peripheral portion 22 of the diffused portion 21 is removed by etching ((b)). ). Next, the second lead hole 10 and the diffusion portion 21 are aligned with each other, and the second substrate 3 and the n-type silicon plate 2 are aligned.
0 is anodically bonded, and the second lead hole 10 is closed by the diffusion portion 21 ((c)). Next, when the n-type silicon plate 20 is removed by leaving the diffusion portion 21 by selective etching or the like, the remaining diffusion portion 21 forms the lid 13 described above ((d)). Then, the second electrode 5 and its extension 5a are formed on the surface of the second substrate 3 on which the lid 13 is formed and the surface of the lid 13 by vapor deposition or sputtering, and the first and second leads are formed. First and second lead portions 11 and 12 are formed on the inner surfaces of the holes 9 and 10 by vapor deposition, sputtering or the like ((e)). Then, the second substrate 3 manufactured in this manner is superposed on the first substrate 2 on which the first electrode 4 and the diaphragm portion 7 are formed, and anodically bonded to each other, whereby the static electricity shown in FIG. The capacitance type pressure sensor 1 is manufactured.

In the capacitance type pressure sensor 1 having such a structure, when the measured pressure P is applied to the surface of the diaphragm portion 7 opposite to the first electrode 4 side, the diaphragm portion 7 is displaced, The minute gap G between the first and second electrodes 4 and 5 is changed. Therefore, the capacitance value of the capacitor also changes, and the measured pressure P can be measured by measuring this capacitance value.

[0008]

However, the above-mentioned conventional electrostatic capacity type pressure sensor 1 has a problem that it requires many manufacturing steps and takes a long time. That is,
In order to form the second lead portion 12 in the second lead hole 10 by vapor deposition, sputtering or the like, a lid 13 made of an n-type silicon plate is used to open the inner opening of the second lead hole 10. Since it is necessary to close it, in order to form the lid body 13, as shown in FIG. 16, a boron diffusion step, an etching step of the peripheral portion of the diffusion portion 21 and the second substrate 3 and n are performed.
Many manufacturing processes such as a bonding process of the type silicon plate 20 and a removing process of the n-type silicon plate 20 by selective etching are required. In addition, the extension portion 5a and the lid 13 are connected to the second substrate 3
To form a protruding portion that protrudes from the joint surface 3a of
The process for forming the concave portion 14 in the substrate 2 is also required,
The manufacturing process is further increased. Therefore, productivity is low,
Manufacturing costs increase. Further, if the concave portion 14 is provided on the first substrate 2, the pressure sensor becomes larger, and thus the pressure sensor cannot be downsized.

The present invention has been made in order to solve the above-mentioned conventional problems, and an object of the present invention is to reduce the number of manufacturing steps, reduce the manufacturing cost, and easily downsize the electrostatic capacitance type. It is to provide a pressure sensor.

[0010]

To achieve the above object, the present invention comprises a first substrate having a first electrode on a diaphragm portion, and a second substrate having a second electrode. The first and second substrates are joined to each other to form a minute gap between the first and second electrodes, and the first and second leads are provided in the lead holes provided on either one of the first and second substrates. In a capacitance type pressure sensor in which a first portion and a second electrode are respectively connected to these lead portions, a portion corresponding to the first lead portion of the first electrode is closely contacted with the second substrate. And electrically connected to the first lead portion, and a portion of the second electrode corresponding to the second lead portion was brought into close contact with the first substrate and electrically connected to the second lead portion. It is characterized by Further, the present invention is characterized in that the portion of the first electrode corresponding to the first lead portion is an extension portion extended to the first electrode. Further, the present invention is characterized in that the portion corresponding to the second lead portion of the second electrode is an extension portion extended to the second electrode. Further, according to the present invention, a spacer that surrounds the second electrode in the same plane and holds the first and second substrates in parallel is formed simultaneously with the second electrode on the outer peripheral portion of the bonding surface of the second substrate. Is characterized by. Further, according to the present invention, a spacer that surrounds the first electrode in the same plane and holds the first and second substrates in parallel is formed at the same time as the first electrode on the outer peripheral portion of the bonding surface of the first substrate. Is characterized by. Further, the present invention comprises a first substrate having a first electrode provided on a diaphragm portion and a second substrate having a second electrode, wherein the first and second substrates are joined together to form a first and a second substrate. A small gap is formed between the two electrodes, first and second lead portions are formed in the lead holes provided in the second substrate, and the first and second electrodes are connected to these lead portions, respectively. In the electrostatic capacitance type pressure sensor, an extension portion is extended to the first electrode and is formed at the same time as the second electrode on the second substrate to surround the second electrode in the same plane. A spacer for holding the two substrates in parallel and a metal thin film for electrode connection, which is in close contact with the first substrate and electrically connected to the extension portion of the first substrate, are formed corresponding to the first lead portions. Then, the first lead portion is electrically connected to the electrode connecting metal thin film, and the second lead of the second electrode is connected. An extension portion that is in close contact with the first substrate is provided at a portion corresponding to the lead portion, and the extension portion is electrically connected to the second lead portion directly or through the spacer. To do. Furthermore, the present invention is characterized in that a diaphragm portion is provided on the second substrate, and a second electrode is provided on the diaphragm portion.

A portion of the first electrode corresponding to the first lead portion is brought into close contact with the second substrate and electrically connected to the first lead portion. Further, a portion of the second electrode corresponding to the second lead portion is brought into close contact with the first substrate and electrically connected to the second lead portion. The first and second lead portions are formed after the inner opening portions of the first and second lead holes are closed by the portions corresponding to the electrode lead portions due to the bonding of the first and second substrates. It The spacer is simultaneously formed in the same step by the same material as the first or second electrode by vapor deposition, sputtering or the like, and holds the first and second substrates in parallel. The diaphragm portion formed on the first and second substrates is
Allows measurement of differential pressure.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail based on an embodiment shown in the drawings. 1 is a sectional view showing an embodiment in which a capacitance type pressure sensor according to the present invention is packaged, FIG. 2 is a sectional view of the same pressure sensor, FIG. 3 is a plan view of a first substrate, and FIG. 4 is the same. FIG. 5 is a sectional view of the substrate, FIG. 5 is a bottom view of the second substrate, and FIG. 6 is a sectional view of the same substrate. It should be noted that the same components as those described in the section of the prior art are denoted by the same reference numerals and the description thereof will be omitted. In FIG. 1, 30 is a capacitance type pressure sensor joined to a pedestal 31, 32 is a stem to which the pedestal 31 is joined, 33 is a capacitance type pressure sensor 30 joined to the stem 32 by brazing or the like. Cap for sealing, 34 is a lead pin, 35
Is the first and second lead portions 1 of the capacitance type pressure sensor 30.
Lead wires connecting the lead pins 1 and 12 and the lead pin 34, and 36 is a pipe joined to the stem 32 by brazing or the like.
These constitute the pressure sensor 37. The measured pressure P passes through the holes 38 and 39 provided in the pipe 36, the stem 32, and the pedestal 31, and the capacitance type pressure sensor 3
0 diaphragm part 7 and this diaphragm part 7
Is measured by displacing. In addition, cap 3
The inside of 3 is filled with an inert gas. 40 is a hermetic seal.

2 to 6, the capacitance type pressure sensor 30 includes first and second substrates 2 and 3 which are bonded to each other. For example, in the central portion of the first substrate 2 made of an insulating material, single crystal silicon or the like, a diaphragm portion 7 is formed by forming a concave portion, and a first electrode 4 and its extension portion 4a are formed. . The extension 4a has a first
The electrode 4 and the first lead portion 11 are electrically connected to each other and are simultaneously formed of the same metal (for example, aluminum) by the same process as the first electrode 4 by vapor deposition, sputtering or the like. Therefore, the thickness T1 of the extension 4a is equal to the thickness of the first electrode 4. Such an extension 4a is
The first and second lead portions 11 are formed so as to extend from the first electrode 4 to the outside of the diaphragm portion 7, that is, to the bonding surface 2a of the first substrate 2 so as to correspond to the first lead portion 11. When the substrates 2 and 3 are joined, the first lead hole 9 is closed.

For example, the second electrode 5 and the first and second substrates 2 and 3 are held in parallel on the joint surface 3a of the second substrate 3 made of Pyrex glass with the first substrate 2. The spacers 43 are simultaneously formed of the same metal capable of anodic bonding in one step. Therefore, the spacer 43 has conductivity, and the thickness T2 is set to be equal to the thickness of the second electrode 5 and equal to or slightly larger than the thickness T1 of the first electrode 4 and the extension portion 4a. ing. By setting such a film thickness, when the first and second substrates 2 and 3 are anodically bonded, the spacer 43 can be reliably bonded over the entire bonding surface 2a of the first substrate 2. it can. The spacer 43 is formed over the entire circumference of the bonding surface 3a so as to surround the circumference of the second electrode 5, and the inner peripheral surface of the spacer 43 extends the extension 4a of the first substrate 2.
The portion corresponding to the first lead portion 11 and the extension portion 4
A separation portion 44 is formed so that a is in contact with and not electrically connected. And this spacer 43
Are electrically connected to the second lead portion 12 provided on the second substrate 3. The second electrode 5 is formed at the center of the joint surface 3a so as to face the first electrode 4, and is connected to the spacer 43 by the extension portion 5a.

The first and second lead holes 9 and 10 are formed in the second
Is formed on the second substrate 3 before or after the electrode 5 and the spacer 43 are formed. When the first and second lead holes 9 and 10 are first formed and then the second electrode 5 and the spacer 43 are formed, the spacer 43 is stopped at the edge of the lead hole 10 or the lead hole 10 is formed. It is possible to form even inside. At this time, the first lead hole 9 is closed with a mask so that the spacer 43 does not adhere to the first lead hole 9. On the other hand, when the lead holes 9 and 10 are formed after the second electrode 5 and the spacer 43 are formed, it is difficult to form them so as not to cut into the spacer 43. It should be stopped inside. Then, the first and second
When the lead portions 11 and 12 are formed by vapor deposition or the like, the second lead portion 12 is electrically connected to the spacer 43 in the inner part of the second lead hole 10, so there is no problem. Then, when the first and second substrates 2 and 3 are anodically bonded, the extension portion 4a of the first electrode 4 closes the first lead hole 9 and is electrically joined to the first lead portion 11.

Further, the first and second lead holes 9 and 10 are provided.
Can be processed and formed even after the anodic bonding of the first and second substrates 2 and 3. In that case, the extension 4a of the first electrode 4 comes into close contact with the bonding surface of the second substrate 3 and the spacer 4
Since 3 is in close contact with the joint surface of the first substrate 2, if it is formed by penetrating so as to reach the joint surface of the first substrate 2, the first and second lead holes 9 can be formed by vapor deposition or the like. When the first and second lead parts 11 and 12 are formed on the inner peripheral surfaces of the first and second lead parts 10, 10, the first lead part 11 and the extension part 4a and the second lead part 12 and the spacer 43 can be reliably connected. it can.

In the capacitance type pressure sensor 30 having such a structure, the extension portion 4 extending to the first electrode 4 is provided.
a is brought into close contact with the bonding surface of the second substrate 3 and the first lead portion 1
1 is electrically connected directly to the spacer 43, and the spacer 43 is connected to the first substrate 2
It is not necessary to use the lid body 13 shown in FIG. 15 because it is closely contacted with the joint surface of and is electrically connected to the second lead portion 12. Therefore, the manufacturing process for producing the lid body 13 is omitted. be able to. In addition, the first electrode 4 and the extension 4
Since a and the second electrode 5 and the spacer 43 can be simultaneously formed of the same metal in one step, the number of steps does not increase from this point as well. Also,
If the lid 13 that forms the protrusion is not required, it is not necessary to provide a recessed portion for allowing the lid 13 to escape on the first substrate 2 side, and the number of manufacturing steps of the first substrate 2 can be reduced. If there is no recess, the first substrate 2 can be downsized.

7 to 10 show another embodiment of the present invention. FIG. 7 is a plan view of a first substrate, FIG. 8 is a sectional view of the same substrate, and FIG. 9 is a second substrate. The bottom view and FIG. 10 are cross-sectional views of the same substrate. In this embodiment, the first electrode 4 and the spacer 43 are formed on the joint surface 2a of the first substrate 2, and only the second electrode 5 and its extension 5a are formed on the joint surface 3a of the second substrate 3. Is formed.

The spacer 43 is simultaneously formed in one step by the same anodic bonding metal as the first electrode 4 by vapor deposition, sputtering or the like, and surrounds the entire circumference of the first electrode 4. Therefore, the spacer 43 has conductivity and the thickness T3 is equal to the thickness of the first electrode 4. Further, the first electrode 4 is electrically connected to the spacer 43 by the extension 4a. The thickness T4 of the second electrode 5 is set to be equal to or slightly smaller than the thickness T3 of the spacer 43, and is electrically connected to the second lead portion 12 via the extension portion 5a.

Also in such a structure, as in the above-described embodiment, the processing of the first and second lead holes 9 and 10 is performed before the anodic bonding of the first and second substrates 2 and 3. Any of the latter may be used, and after anodic bonding, the first and second lead portions 11 and 12 may be formed on the inner surfaces of the first and second lead holes 9 and 10 by vapor deposition or the like. Further, even in such a structure, since the conventional lid is not required, the number of manufacturing steps can be reduced.

11 and 12 show another embodiment of the present invention. FIG. 11 is a plan view of the first substrate and FIG. 12 is a bottom view of the second substrate. In this embodiment, the first electrode 4 and its extension 4a are simultaneously formed of the same metal on the first substrate 2 in one step, and
The second electrode 5 and its extension 5a and the spacer 4 on the substrate 3 of
3 and the electrode connecting metal thin film 50 are simultaneously formed of the same metal in one step. The spacer 43 is the second
Of the second substrate 3 so as to surround the electrode 5 and the electrode-connecting metal thin film 50, and is formed in a square shape over the entire circumference, and is formed on the inner peripheral side at a portion corresponding to the electrode-connecting metal thin film 50. Is provided with a separating portion 44. The electrode connecting metal thin film 50 is formed corresponding to the first lead hole 9, and is electrically connected to the extension portion 4a when the first and second substrates 2 and 3 are anodically bonded. In this case, the extension portion 4a and the electrode-connecting metal thin film 50 have the one end edges 4a-1 and 50a.
The first and second substrates 2 and 3 so that a-1 abuts each other.
Are electrically connected by overlapping. This is to prevent the extension portion 4a and the electrode connecting metal thin film 50 from overlapping each other.

Also in this structure, as in the above-described embodiment, the processing of the first and second lead holes 9 and 10 is performed before the anodic bonding of the first and second substrates 2 and 3. After the anodic bonding, the lead portions may be formed on the inner surfaces of the lead holes 9 and 10 by vapor deposition or the like.

13 and 14 are views showing another embodiment of the spacer for setting the interval. FIG.
Shows an example in which the spacer 43 is formed in a square shape on the joint surface 3 a of the second substrate 3 so as to surround the entire circumference of the second electrode 5. Since the spacer 43 is formed simultaneously with the second electrode 5 in one step, it has the same thickness, but is not electrically connected to either the first or second lead portion and is simply the first or second electrode. It has only the function of keeping the distance between the second substrates parallel to each other. The second electrode 5 is electrically connected to the second lead portion via the extension portion 5a. Although not shown, the first electrode of the first substrate is electrically connected to the first lead portion via the extension 4a as in the embodiment shown in FIGS. 3 and 4. .

FIG. 14 shows an example in which spacers 43 are formed at four corners of the bonding surface of the second substrate 3 so as to be scattered around the second electrode 5. In this case also, the spacer 43
Is formed simultaneously with the second electrode 5 in one step, but is not electrically connected to either the first or second lead portion,
It has only the function of keeping the distance between the first and second substrates parallel to each other. Although an example of the shape of the spacer 43 is rectangular, the shape of the spacer 43 may be an appropriate shape such as a hook shape.

In this embodiment, the spacer 43
Since the electrodes are discontinuously formed, even if the first and second substrates are anodically bonded, a minute gap is formed between the two substrates, and the concave portion 6 (see FIG. 2) of the first substrate 2 is externally formed. However, as shown in FIG. 1, since the electrostatic capacitance type pressure sensor 30 itself is sealed by the cover 33 containing the inert gas, the first and second electrodes 4 and 5 are oxidized. There is nothing to do.

FIG. 15 is a sectional view showing still another embodiment of the present invention. In this embodiment, the diaphragm portion 60 is formed in the central portion of the second substrate 3 by forming the concave portion 61 on the surface of the second substrate 3 opposite to the first substrate 2 side. . Other configurations are the same as those of the embodiment shown in FIG. In such a configuration, the differential pressure can be measured by introducing the measured pressures P1 and P2 on the low pressure side and the high pressure side to both diaphragm portions 7 and 60.

In each of the above-described embodiments, the first and second substrates 2 and 3 are formed in a quadrangle, but they may have a round shape or any other suitable shape. Further, the shape of the diaphragm portions 7 and 60 is not limited to the quadrangle, but may be a round shape or another shape.

[0028]

As described above, the capacitance type pressure sensor according to the present invention comprises the first substrate having the first electrode on the diaphragm portion and the second substrate having the second electrode. The first and second substrates are bonded to each other to form a minute gap between the first and second electrodes, and the first and second lead holes are provided in one of the first and second substrates. In the capacitance type pressure sensor in which two lead portions are formed and the first and second electrodes are connected to these lead portions, the portion corresponding to the first lead portion of the first electrode is formed into the second lead portion. The portion corresponding to the second lead portion of the second electrode is brought into close contact with the substrate and electrically connected to the first lead portion, and the portion corresponding to the second lead portion of the second electrode is brought into close contact with the first substrate and electrically connected to the second lead portion. Since it is connected to, the lead hole provided in the second substrate to form the second lead portion is closed by using the lid body. No necessity, therefore the structure is simple, it is possible to omit the process for fabricating the lid. Further, if the lid is not required, it is not necessary to provide a concave portion for letting the lid escape on the first substrate side, and the manufacturing cost can be reduced and the size can be reduced.

Further, in the present invention, a spacer for holding the first and second substrates in parallel is formed simultaneously with the second electrode of the second substrate or the first electrode of the first substrate in the same step. Since this is done, the number of steps does not increase from this point as well, and it can be manufactured at low cost. Further, in the present invention, since the diaphragm portions are provided on the first and second substrates, respectively, the differential pressure can be measured.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing an embodiment in which a capacitive pressure sensor according to the present invention is packaged in a hermetic seal.

FIG. 2 is a sectional view of the same pressure sensor.

FIG. 3 is a plan view of a first substrate.

FIG. 4 is a sectional view of the substrate.

FIG. 5 is a bottom view of the second substrate.

FIG. 6 is a sectional view of the substrate.

FIG. 7 is a plan view of a first substrate showing another embodiment of the present invention.

FIG. 8 is a sectional view of the substrate.

FIG. 9 is a bottom view of the second substrate.

FIG. 10 is a cross-sectional view of the same substrate.

FIG. 11 is a first view showing still another embodiment of the present invention.
FIG. 4 is a plan view of a substrate.

FIG. 12 is a bottom view of the second substrate.

FIG. 13 is a bottom view of the second substrate showing another embodiment of the spacer.

FIG. 14 is a bottom view of the second substrate showing still another embodiment of the spacer.

FIG. 15 is a sectional view showing still another embodiment of the present invention.

16A to 16C are a plan view, a cross-sectional view taken along the line AA, and a cross-sectional view taken along the line BB, showing a conventional example of the capacitance type pressure sensor.

17 (a) to 17 (e) are views for explaining a manufacturing process of the second substrate.

[Explanation of symbols]

1 ... Capacitance type pressure sensor, 2 ... First substrate, 3 ... Second
Substrate, 4 ... first electrode, 4a ... extension of the first electrode,
5 ... 2nd electrode, 5a ... Extension part of 2nd electrode, 6 ... Recessed part, 7 ... Diaphragm part, 8 ... Metal thin film, 9 ... First lead hole, 10 ... Second lead hole, 11 ... 1st lead part, 12 ... 2nd lead part, 13 ... Lid body, 14 ... Recessed part, 43 ... Spacer, 50 ... Electrode connection metal thin film, 60
... diaphragm part.

Claims (7)

[Claims] 1. A first substrate having a first electrode on a diaphragm portion, and a second substrate having a second electrode,
The first and second substrates are bonded to each other to form a minute gap between the first and second electrodes, and the first and second lead holes are formed in one of the first and second substrates. In a capacitance type pressure sensor in which lead portions are formed and the first and second electrodes are connected to these lead portions, a portion of the first electrode corresponding to the first lead portion is formed on the second substrate. Closely contact and electrically connect to the first lead portion, and close a portion of the second electrode corresponding to the second lead portion to the first substrate and electrically connect to the second lead portion. Capacitance type pressure sensor characterized by the above. 2. The capacitance type pressure sensor according to claim 1, wherein the portion corresponding to the first lead portion of the first electrode is an extension portion extended to the first electrode. Capacitive pressure sensor. 3. The capacitance type pressure sensor according to claim 1, wherein the portion corresponding to the second lead portion of the second electrode is an extension portion extended to the second electrode. Capacitive pressure sensor. 4. The capacitance type pressure sensor according to claim 1, wherein the second electrode is surrounded in the same plane on the outer peripheral portion of the bonding surface of the second substrate, and the first and second substrates are parallel to each other. An electrostatic capacitance type pressure sensor, characterized in that a spacer for holding is formed at the same time as the second electrode. 5. The capacitance type pressure sensor according to claim 1, wherein the first electrode is surrounded in the same plane on the outer peripheral portion of the bonding surface of the first substrate, and the first and second substrates are parallel to each other. An electrostatic capacitance type pressure sensor, characterized in that a spacer for holding is formed simultaneously with the first electrode. 6. A first substrate having a first electrode on a diaphragm portion, and a second substrate having a second electrode,
The first and second substrates are joined to form a minute gap between the first and second electrodes, and the first and second lead portions are formed in the lead holes provided in the second substrate. First and second on the lead part
In the capacitance type pressure sensor in which the electrodes are connected to each other, an extension portion is extended to the first electrode, and the second electrode is formed on the second substrate at the same time as the second electrode in the same plane. And a spacer for holding the first and second substrates in parallel with each other, and a metal thin film for electrode connection which is in close contact with the first substrate and electrically connected to an extension of the first substrate. The first lead portion is electrically connected to the metal thin film for electrode connection, and the first substrate is formed on a portion of the second electrode corresponding to the second lead portion. An electrostatic capacitance type pressure sensor characterized in that an extended portion which is brought into close contact is extended and the extended portion is electrically connected to the second lead portion directly or through the spacer. 7. The capacitance type pressure sensor according to claim 1, wherein a diaphragm portion is provided on the second substrate, and a second electrode is provided on the diaphragm portion. Capacitive pressure sensor.