JPH114079A - Multilayer wiring board - Google Patents
Multilayer wiring boardInfo
- Publication number
- JPH114079A JPH114079A JP15382997A JP15382997A JPH114079A JP H114079 A JPH114079 A JP H114079A JP 15382997 A JP15382997 A JP 15382997A JP 15382997 A JP15382997 A JP 15382997A JP H114079 A JPH114079 A JP H114079A
- Authority
- JP
- Japan
- Prior art keywords
- organic resin
- substrate
- resin insulating
- insulating layer
- multilayer wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
(57)【要約】
【課題】基板と多層配線部との間に熱膨張係数の相違に
よって剥離が発生する。
【解決手段】基板1と、該基板1の少なくとも一主面に
被着され、複数の有機樹脂絶縁層2と薄膜配線導体層3
とを交互に積層するとともに上下に位置する薄膜配線導
体層3を有機樹脂絶縁層2に設けたスルーホール導体6
を介して電気的に接続した多層配線部4とから成る多層
配線基板であって、前記基板1は有機樹脂中に無機物粉
末及び/又は金属粉末を含有させて形成されており、か
つ多層配線部4の被着される表面が有機樹脂のみで形成
されている。
(57) Abstract: Separation occurs due to a difference in thermal expansion coefficient between a substrate and a multilayer wiring portion. A substrate, a plurality of organic resin insulating layers, and a plurality of thin-film wiring conductor layers attached to at least one main surface of the substrate.
Are alternately laminated, and the through-hole conductors 6 in which the thin film wiring conductor layers 3 positioned above and below are provided on the organic resin insulating layer 2 are provided.
A multi-layer wiring board comprising a multi-layer wiring portion 4 electrically connected through a substrate, wherein the substrate 1 is formed by adding an inorganic powder and / or a metal powder to an organic resin, and The surface to be attached of No. 4 is formed only of an organic resin.
Description
【0001】[0001]
【発明の属する技術分野】本発明は多層配線基板に関
し、より詳細には混成集積回路装置や半導体素子を収容
する半導体素子収納用パッケージ等に使用される多層配
線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board used for a hybrid integrated circuit device, a semiconductor element housing package for housing a semiconductor element, and the like.
【0002】[0002]
【従来の技術】従来、混成集積回路装置や半導体素子収
納用パッケージ等に使用される多層配線基板はその配線
導体がMo−Mn法等の厚膜形成技術によって形成され
ている。2. Description of the Related Art Hitherto, a multilayer wiring board used in a hybrid integrated circuit device, a package for accommodating a semiconductor element, or the like, has its wiring conductor formed by a thick film forming technique such as the Mo-Mn method.
【0003】このMo−Mn法は通常、タングステン、
モリブデン、マンガン等の高融点金属粉末に有機溶剤、
溶媒を添加混合し、ペースト状となした金属ペーストを
生セラミツク体の外表面にスクリーン印刷法により所定
パターンに印刷塗布し、次にこれを複数枚積層するとと
もに還元雰囲気中で焼成し、高融点金属粉末と生セラミ
ツク体とを焼結一体化させる方法である。[0003] This Mo-Mn method is generally used for tungsten,
Organic solvents for high melting point metal powders such as molybdenum and manganese,
A solvent is added and mixed, and a paste-like metal paste is printed and applied on the outer surface of the raw ceramic body in a predetermined pattern by a screen printing method. Then, a plurality of these are laminated and fired in a reducing atmosphere to obtain a high melting point. This is a method in which the metal powder and the raw ceramic body are sintered and integrated.
【0004】なお、前記配線導体が形成されるセラミッ
ク体としては通常、酸化アルミニウム質焼結体やムライ
ト質焼結体等の酸化物系セラミックス、或いは表面に酸
化物膜を被着させた窒化アルミニウム質焼結体や炭化珪
素質焼結体等の非酸化物系セラミックスが使用される。The ceramic body on which the wiring conductor is formed is usually an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or an aluminum nitride having an oxide film deposited on the surface. Non-oxide ceramics such as a porous sintered body and a silicon carbide sintered body are used.
【0005】しかしながら、このMo−Mn法を用いて
配線導体を形成した場合、配線導体は金属ペーストをス
クリーン印刷することにより形成されることから微細化
が困難で配線導体を高密度に形成することができないと
いう欠点を有していた。However, when the wiring conductor is formed by using the Mo-Mn method, the wiring conductor is formed by screen-printing a metal paste. Had the drawback that it could not be done.
【0006】そこで上記欠点を解消するために配線導体
を従来の厚膜形成技術で形成するのに変えて微細化が可
能な薄膜形成技術を用いて高密度に形成した多層配線基
板が使用されるようになってきた。In order to solve the above-mentioned drawbacks, a multi-layer wiring board formed using a thin film forming technique capable of miniaturization instead of forming the wiring conductor by the conventional thick film forming technique is used. It has become.
【0007】かかる配線導体を薄膜形成技術により形成
した多層配線基板は、一般に酸化アルミニウム質焼結体
等のセラミックスから成る絶縁性の基板上面に、スピン
コート法及び熱硬化処理等によって形成されるエポキシ
樹脂等の有機樹脂から成る絶縁層と、銅やアルミニウム
等の金属を無電解めっき法や蒸着法等の薄膜形成技術及
びフォトリソグラフィー技術を採用することによって形
成される薄膜配線導体層とを交互に積層させるととも
に、上下に位置する薄膜配線導体層を有機樹脂絶縁層に
設けたスルーホールの内壁に被着されているスルーホー
ル導体を介して電気的に接続させた構造を有しており、
最上層の有機樹脂絶縁層上面に、前記薄膜配線導体層と
電気的に接続するボンディングパッドを形成しておき、
該ボンディングパッドに半導体素子等の能動部品や容量
素子、抵抗器等の受動部品の電極を半田等のロウ材を介
して接続させるようになっている。[0007] A multilayer wiring board in which such wiring conductors are formed by a thin film forming technique generally comprises an epoxy formed by spin coating, thermosetting, or the like on the upper surface of an insulating substrate made of ceramics such as an aluminum oxide sintered body. An insulating layer made of an organic resin such as a resin, and a thin film wiring conductor layer formed by employing a thin film forming technique such as electroless plating or vapor deposition of a metal such as copper or aluminum and a photolithography technique. Along with laminating, it has a structure in which upper and lower thin film wiring conductor layers are electrically connected via through hole conductors attached to the inner walls of through holes provided in the organic resin insulating layer,
On the upper surface of the uppermost organic resin insulating layer, a bonding pad that is electrically connected to the thin film wiring conductor layer is formed,
Electrodes of active components such as semiconductor devices, passive components such as capacitors, resistors and the like are connected to the bonding pads via a brazing material such as solder.
【0008】なお、前記多層配線基板においては、積層
された各有機樹脂絶縁層間に配設された薄膜配線導体層
が有機樹脂絶縁層に設けたスルーホールの内壁に被着さ
れているスルーホール導体を介して電気的に接続されて
おり、各有機樹脂絶縁層へのスルーホールの形成はまず
各有機樹脂絶縁層上にレジスト材を塗布するとともにこ
れに露光、現像を施すことによって所定位置に所定形状
の窓部を形成し、次に前記レジスト材の窓部にエッチン
グ液を配し、レジスト材の窓部に位置する有機樹脂絶縁
層を除去して、有機樹脂絶縁層に穴(スルーホール)を
形成し、最後に前記レジスト材を有機樹脂絶縁層上より
剥離させ除去することによって行われている。In the above-mentioned multilayer wiring board, a thin-film wiring conductor layer provided between the laminated organic resin insulating layers is provided on the inner wall of the through hole provided in the organic resin insulating layer. The through holes in each organic resin insulating layer are formed by first applying a resist material on each organic resin insulating layer and exposing and developing the resist material to a predetermined position. A window having a shape is formed, and then an etchant is disposed on the window of the resist material, the organic resin insulating layer located on the window of the resist material is removed, and holes (through holes) are formed in the organic resin insulating layer. And finally removing and removing the resist material from the organic resin insulating layer.
【0009】[0009]
【発明が解決しようとする課題】しかしながら、この多
層配線基板においては、基板が一般に酸化アルミニウム
質焼結体等のセラミックスで形成されており、該酸化ア
ルミニウム質焼結体等のセラミックスは熱膨張係数が約
5〜10×10-6/℃であり、上面に被着される有機樹
脂絶縁層の熱膨張係数(約20〜30×10-6/℃)と
相違するため、基板と有機樹脂絶縁層に半導体素子や容
量素子等の電子部品をボンディングパッドに接続させる
時の熱や電子部品が作動時に発生する熱等が印加される
と基板と有機樹脂絶縁層の接合部に両者の熱膨張係数の
相違に起因する熱応力が発生し、該熱応力によって有機
樹脂絶縁層が基板より剥離してしまうという欠点を誘発
した。特に基板が大きく、基板と有機樹脂絶縁層との接
合面積が広い場合、上記欠点は極めて顕著なものとな
る。However, in this multilayer wiring board, the substrate is generally formed of a ceramic such as an aluminum oxide sintered body, and the ceramic such as the aluminum oxide sintered body has a coefficient of thermal expansion. Is about 5 to 10 × 10 −6 / ° C., which is different from the coefficient of thermal expansion (about 20 to 30 × 10 −6 / ° C.) of the organic resin insulating layer deposited on the upper surface. When heat is applied to the layers when connecting electronic components such as semiconductor elements and capacitive elements to the bonding pads and heat generated when the electronic components operate, the thermal expansion coefficient of the two at the joint between the substrate and the organic resin insulating layer , A thermal stress is generated due to the difference, and the thermal stress causes a disadvantage that the organic resin insulating layer is peeled off from the substrate. In particular, when the substrate is large and the bonding area between the substrate and the organic resin insulating layer is large, the above-described disadvantage becomes extremely significant.
【0010】また前記多層配線基板においては、基板を
形成する酸化アルミニウム質焼結体等は固くて脆弱な性
質を有するため外部から衝撃力が印加されると該衝撃力
によって容易に割れ等の破損を発生してしまうという欠
点も有していた。In the multilayer wiring board, the aluminum oxide sintered body or the like forming the board has a hard and brittle property. Therefore, when an impact force is applied from the outside, the aluminum oxide sintered body is easily broken by the impact force. Also had the disadvantage of generating
【0011】更に前記酸化アルミニウム質焼結体等から
成る基板は該基板を焼成し製作する際に不均一な焼成収
縮によって反りや寸法ばらつきが発生し易く、基板に反
りや寸法ばらつきが発生していると基板表面に有機樹脂
絶縁層と薄膜配線導体層を正確に形成することができな
いという欠点も有する。Further, the substrate made of the aluminum oxide sintered body or the like is liable to cause warpage and dimensional variation due to uneven firing shrinkage when the substrate is baked and manufactured. In this case, the organic resin insulating layer and the thin-film wiring conductor layer cannot be accurately formed on the substrate surface.
【0012】本発明は上記諸欠点に鑑み案出されたもの
で、その目的は基板と有機樹脂絶縁層との熱膨張係数を
近似させて両者を強固に接合させ、かつ基板の機械的強
度を強固とするとともに基板を平坦として所定の有機樹
脂絶縁層と薄膜配線導体層を正確に形成することができ
る高信頼性の多層配線基板を提供することにある。The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to approximate the thermal expansion coefficients of a substrate and an organic resin insulating layer so that they are firmly joined together and the mechanical strength of the substrate is reduced. It is an object of the present invention to provide a high-reliability multilayer wiring board which can be formed firmly and flatten a substrate to accurately form a predetermined organic resin insulating layer and a thin-film wiring conductor layer.
【0013】[0013]
【課題を解決するための手段】本発明は、基板と、該基
板の少なくとも一主面に被着され、複数の有機樹脂絶縁
層と薄膜配線導体層とを交互に積層するとともに上下に
位置する薄膜配線導体層を有機樹脂絶縁層に設けたスル
ーホール導体を介して電気的に接続した多層配線部とか
ら成る多層配線基板であって、前記基板は有機樹脂中に
無機物粉末及び/又は金属粉末を含有させて形成されて
おり、かつ多層配線部の被着される表面が有機樹脂のみ
で形成されていることを特徴とするものである。According to the present invention, a substrate and a plurality of organic resin insulating layers and thin-film wiring conductor layers, which are attached to at least one principal surface of the substrate and are alternately laminated, are positioned above and below. A multi-layer wiring board comprising a thin-film wiring conductor layer and a multi-layer wiring portion electrically connected via a through-hole conductor provided in an organic resin insulating layer, wherein the substrate comprises an inorganic resin powder and / or a metal powder in an organic resin. And the surface to which the multilayer wiring portion is attached is formed only of an organic resin.
【0014】また本発明は、前記無機物粉末及び/又は
金属粉末の粒径が0.05μm乃至10μmであること
を特徴とするものである。The present invention is also characterized in that the particle diameter of the inorganic powder and / or the metal powder is 0.05 μm to 10 μm.
【0015】更に本発明は、前記無機物粉末及び/又は
金属粉末の含有量が20重量%乃至90重量%であるこ
とを特徴とするものである。Further, the present invention is characterized in that the content of the inorganic powder and / or the metal powder is 20% by weight to 90% by weight.
【0016】本発明の多層配線基板によれば、有機樹脂
絶縁層と薄膜配線導体層とから成る多層配線部が被着さ
れる基板を有機樹脂中に無機物粉末及び/又は金属粉末
を例えば、20重量%乃至90重量%含有させて形成し
たことから基板の熱膨張係数が有機樹脂絶縁層の熱膨張
係数に近似し、その結果、基板と有機樹脂絶縁層に熱が
印加されても両者間には両者の熱膨張係数の相違に起因
する応力が発生することはなく両者を極めて強固に接合
させることができる。According to the multilayer wiring board of the present invention, the substrate on which the multilayer wiring portion composed of the organic resin insulating layer and the thin-film wiring conductor layer is to be adhered is made of an inorganic resin and / or a metal powder in an organic resin. % To 90% by weight, the coefficient of thermal expansion of the substrate is close to the coefficient of thermal expansion of the organic resin insulating layer. As a result, even when heat is applied to the substrate and the organic resin insulating layer, the substrate expands between the two. Does not generate stress due to the difference in the coefficient of thermal expansion between the two, and the two can be joined very firmly.
【0017】また本発明の多層配線基板によれば、基板
の多層配線部が接合する表面を有機樹脂のみとし、無機
物粉末及び/又は金属粉末が露出しないようにしたこと
から基板と多層配線部の有機樹脂絶縁層とを極めて強固
に接合させることができる。Further, according to the multilayer wiring board of the present invention, the surface to which the multilayer wiring section of the substrate is joined is made only of an organic resin and the inorganic powder and / or the metal powder are not exposed, so that the substrate and the multilayer wiring section are not exposed. The organic resin insulating layer can be bonded very firmly.
【0018】更に本発明の多層配線基板によれば、基板
を靱性に優れる有機樹脂中に無機物粉末及び/又は金属
粉末を含有させることによって形成したことから基板の
機械的強度が強くなり、外部より衝撃力が印加されても
容易に破損することはない。Further, according to the multilayer wiring board of the present invention, since the board is formed by incorporating an inorganic powder and / or a metal powder in an organic resin having excellent toughness, the mechanical strength of the board is increased, and Even if an impact force is applied, it is not easily broken.
【0019】また更に本発明の多層配線基板によれば、
基板は有機樹脂中に無機物粉末及び/又は金属粉末を含
有させることによって形成され、有機樹脂は熱硬化もし
くは光硬化によって固化し、焼成工程を伴わないことか
ら焼成に伴う不均一な焼成収縮によって反りや寸法ばら
つきを発生することもなく、その結果、基板はその表面
を平坦とした所定寸法となし、基板の表面に有機樹脂絶
縁層と薄膜配線導体層とを正確に形成することが可能と
なる。Further, according to the multilayer wiring board of the present invention,
The substrate is formed by incorporating an inorganic powder and / or a metal powder into an organic resin, and the organic resin is solidified by thermosetting or photocuring, and warps due to uneven firing shrinkage due to firing because it does not involve a firing process. As a result, the substrate does not have a predetermined size with its surface flat and the organic resin insulating layer and the thin film wiring conductor layer can be accurately formed on the surface of the substrate. .
【0020】[0020]
【発明の実施の形態】次に本発明を添付図面に基づき詳
細に説明する。図1は、本発明の多層配線基板の一実施
例を示し、1は基板、2は有機樹脂絶縁層、3は薄膜配
線導体層である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a multilayer wiring board according to the present invention, wherein 1 is a substrate, 2 is an organic resin insulating layer, and 3 is a thin-film wiring conductor layer.
【0021】前記基板1はその上面に多数の有機樹脂絶
縁層2と薄膜配線導体層3を交互に多層に積層してなる
多層配線部4が配設されており、該多層配線部4を支持
する支持部材として作用する。On the upper surface of the substrate 1, there is provided a multilayer wiring portion 4 in which a large number of organic resin insulating layers 2 and thin film wiring conductor layers 3 are alternately laminated in a multilayer. Act as a supporting member.
【0022】前記基板1はエポキシ樹脂、ポリイミド樹
脂、フェール樹脂、熱硬化性ポリフェニレンエーテル樹
脂、ポリイミドアミド樹脂、ビスマレイミドトリアジン
樹脂、ふっ素樹脂等の有機樹脂中に、酸化珪素、酸化ア
ルミニウム、窒化アルミニウム、炭化珪素、チタン酸バ
リウム、チタン酸ストロンチウム、チタン酸カルシウ
ム、酸化チタン、ゼオライト、タングステン、モリブデ
ン、銅等の無機物粉末や金属粉末を含有させて成り、例
えば、有機樹脂がエポキシ樹脂、無機物粉末が酸化珪素
粉末である場合には、ビスフェノールA型エポキシ樹
脂、ノボラック型エポキシ樹脂、グリシジルエステル型
エポキシ樹脂等のエポキシ樹脂にアミン系硬化剤、イミ
ダゾール系硬化剤、酸無水物系硬化剤等の硬化剤を添加
混合したペースト状のエポキシ樹脂前駆体に粒径が0.
1μm〜100μm程度の酸化珪素粉末を添加し、次に
これを従来周知のドクターブレード法やカレンダーロー
ル法を採用することによってシート状に成形し、最後に
前記シートを必要に応じて上下に複数枚積層するととも
に約80℃〜300℃の温度で約10秒〜24時間熱処
理し、熱硬化させることによって製作される。The substrate 1 is made of an organic resin such as an epoxy resin, a polyimide resin, a fail resin, a thermosetting polyphenylene ether resin, a polyimide amide resin, a bismaleimide triazine resin, or a fluororesin, and contains silicon oxide, aluminum oxide, aluminum nitride, It contains inorganic powder or metal powder such as silicon carbide, barium titanate, strontium titanate, calcium titanate, titanium oxide, zeolite, tungsten, molybdenum, copper, etc., for example, an organic resin is an epoxy resin, and an inorganic powder is oxidized. In the case of silicon powder, a curing agent such as an amine-based curing agent, an imidazole-based curing agent, or an acid anhydride-based curing agent is added to an epoxy resin such as a bisphenol A type epoxy resin, a novolak type epoxy resin, and a glycidyl ester type epoxy resin. Paste mixed with addition Particle size 0 to epoxy resin precursor.
A silicon oxide powder of about 1 μm to 100 μm is added, and then this is formed into a sheet by employing a conventionally known doctor blade method or calender roll method. Finally, a plurality of the sheets are vertically stacked as necessary. It is manufactured by laminating, heat-treating at a temperature of about 80 ° C. to 300 ° C. for about 10 seconds to 24 hours, and thermosetting.
【0023】前記基板1はエポキシ樹脂等の有機樹脂中
に、酸化珪素やタングステン等の無機物粉末や金属粉末
を含有させて形成されていることからその熱膨張係数が
10〜90(ppm/K:60〜80℃)となって、後
述する基板1の上面に被着される多層配線部4の有機樹
脂絶縁層2の熱膨張係数(10〜90ppm/K:60
〜80℃)に近似するものとなり、その結果、基板1と
多層配線部4の有機樹脂絶縁層2に熱が作用したとして
も両者間には両者の熱膨張係数の相違に起因する応力が
発生することはなく、これによって基板1と多層配線部
4とを強固に接合させることが可能となる。Since the substrate 1 is made of an organic resin such as an epoxy resin containing an inorganic powder such as silicon oxide or tungsten or a metal powder, its thermal expansion coefficient is 10 to 90 (ppm / K: 60 to 80 ° C.), and the coefficient of thermal expansion (10 to 90 ppm / K: 60) of the organic resin insulating layer 2 of the multilayer wiring portion 4 attached to the upper surface of the substrate 1 described later.
(Approximately 80 ° C.). As a result, even if heat acts on the substrate 1 and the organic resin insulating layer 2 of the multilayer wiring portion 4, a stress is generated between the two due to a difference in thermal expansion coefficient between the two. Therefore, the substrate 1 and the multilayer wiring portion 4 can be firmly joined.
【0024】また同時に基板1の上面、即ち、多層配線
部4が接合する表面は有機樹脂のみとし、無機物粉末や
金属粉末は露出しないようにしたことから基板1に対し
て該基板1と同質の材料から成る多層配線部4の有機樹
脂絶縁層2を接触させて基板1と多層配線部4とを極め
て強固に接合させることもできる。At the same time, the upper surface of the substrate 1, that is, the surface to which the multilayer wiring portion 4 is bonded is made of only organic resin, and the inorganic powder and the metal powder are not exposed. The organic resin insulating layer 2 of the multilayer wiring portion 4 made of a material can be brought into contact with the substrate 1 and the multilayer wiring portion 4 to be extremely strongly bonded.
【0025】更に前記基板1はエポキシ樹脂等の有機樹
脂が熱硬化によって固化し、焼成工程を伴わないことか
ら焼成に伴う不均一な焼成収縮によって反りや寸法ばら
つきが発生することはなく、その結果、基板1はその表
面が平坦な所定寸法となり、基板1の表面に有機樹脂絶
縁層2と薄膜配線導体層3とから成る多層配線部4を正
確に形成することも可能となる。Furthermore, since the substrate 1 is made of an organic resin such as an epoxy resin solidified by thermosetting and does not involve a firing step, there is no warpage or dimensional variation due to uneven firing shrinkage accompanying firing. In addition, the substrate 1 has a predetermined size with a flat surface, and the multilayer wiring portion 4 including the organic resin insulating layer 2 and the thin film wiring conductor layer 3 can be accurately formed on the surface of the substrate 1.
【0026】また更に前記基板1は靱性に優れるエポキ
シ樹脂等の有機樹脂中に、酸化珪素やタングステン等の
無機物粉末や金属粉末を含有させて形成されていること
から基板1の機械的強度が極めて強いものとなり、その
結果基板1に外部より衝撃力が印加されても該衝撃力に
よって容易に破損することもない。Further, since the substrate 1 is formed by adding an inorganic resin such as silicon oxide or tungsten or a metal powder to an organic resin such as an epoxy resin having excellent toughness, the mechanical strength of the substrate 1 is extremely high. As a result, even if an impact force is applied to the substrate 1 from the outside, the substrate 1 is not easily damaged by the impact force.
【0027】なお、前記基板1は有機樹脂中に含有され
る酸化珪素、酸化アルミニウム、窒化アルミニウム、炭
化珪素、チタン酸バリウム、チタン酸ストロンチウム、
チタン酸カルシウム、酸化チタン、ゼオライト、タング
ステン、モリブデン、銅、銀、アルミニウム等の無機物
粉末や金属粉末が基板1の熱膨張係数を多層配線基板4
の有機樹脂絶縁層2の熱膨張係数に近似させる他に基板
1の誘電率や熱伝導率、耐水性等を所望値に制御する作
用もなし、その含有量が20重量%未満となるとこれら
の各特性を所望値に制御するのが困難となり、また90
重量%を超えると無機物粉末や金属粉末を有機樹脂で強
固に結合して所定形状の基板1を得るのが困難となる傾
向にある。従って、前記基板1の有機樹脂中に含有され
る無機物粉末や金属粉末はその含有量を20重量%乃至
90重量%の範囲としておくことが好ましい。The substrate 1 is made of silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, strontium titanate contained in an organic resin.
Inorganic powders and metal powders such as calcium titanate, titanium oxide, zeolite, tungsten, molybdenum, copper, silver, and aluminum determine the thermal expansion coefficient of the substrate 1 by using the multilayer wiring board 4.
In addition to approximating the coefficient of thermal expansion of the organic resin insulating layer 2, there is no function of controlling the dielectric constant, thermal conductivity, water resistance, etc. of the substrate 1 to desired values. It becomes difficult to control each characteristic to a desired value.
If the content is more than 10% by weight, it tends to be difficult to obtain a substrate 1 having a predetermined shape by firmly bonding inorganic powder or metal powder with an organic resin. Therefore, it is preferable that the content of the inorganic powder and the metal powder contained in the organic resin of the substrate 1 be in the range of 20% by weight to 90% by weight.
【0028】また前記基板1の有機樹脂中に含有される
無機物粉末や金属粉末は、その粒径が0.05μm未満
であると無機物粉末や金属粉末が凝集して有機樹脂中に
均一に分散せず、その結果、基板1の機械的強度が低下
してしまい、また10μmを超えると基板1の表面に大
きな凹凸が形成され、基板1の表面に所望の多層配線部
4を正確に形成するのが困難となる傾向にある。従っ
て、前記基板1の有機樹脂中に含有される無機物粉末や
金属粉末は、その粒径を0.05μm乃至10μmの範
囲としておくことが好ましい。When the particle diameter of the inorganic powder or metal powder contained in the organic resin of the substrate 1 is less than 0.05 μm, the inorganic powder or metal powder is aggregated and uniformly dispersed in the organic resin. However, as a result, the mechanical strength of the substrate 1 decreases, and if it exceeds 10 μm, large irregularities are formed on the surface of the substrate 1, and the desired multilayer wiring portion 4 can be accurately formed on the surface of the substrate 1. Tends to be difficult. Therefore, it is preferable that the particle diameter of the inorganic powder or the metal powder contained in the organic resin of the substrate 1 be in the range of 0.05 μm to 10 μm.
【0029】更に前記基板1はその上面に複数の有機樹
脂絶縁層2と薄膜配線導体層3とが交互に多層に積層さ
れて形成される多層配線部4が被着されており、該多層
配線部4を構成する有機樹脂絶縁層2は上下に位置する
薄膜配線導体層3の電気的絶縁を図る作用をなし、また
薄膜配線導体層3は電気信号を伝達するための伝達路と
して作用する。Further, on the upper surface of the substrate 1, a multilayer wiring portion 4 formed by alternately laminating a plurality of organic resin insulating layers 2 and thin film wiring conductor layers 3 is attached. The organic resin insulating layer 2 constituting the portion 4 functions to electrically insulate the thin film wiring conductor layers 3 located above and below, and the thin film wiring conductor layer 3 functions as a transmission path for transmitting electric signals.
【0030】前記多層配線部4の有機樹脂絶縁層2は、
エポキシ樹脂、ビスマレイミドトリアジン樹脂、ポリフ
ェニレンエーテル樹脂、ふっ素樹脂等の有機樹脂から成
り、例えば、エポキシ樹脂からなる場合、ビスフェノー
ルA型エポキシ樹脂、ノボラック型エポキシ樹脂、グリ
シジルエステル型エポキシ樹脂等にアミン系硬化剤、イ
ミダゾール系硬化剤、酸無水物系硬化剤等の硬化剤を添
加混合してペースト状のエポキシ樹脂前駆体を得るとと
もに該エポキシ樹脂前駆体を基板1の上部にスピンコー
ト法により被着させ、しかる後、これを80℃〜200
℃の熱で0.5〜3時間熱処理し、熱硬化させることに
よって形成される。この場合、基板1の表面は平坦で、
かつ有機樹脂絶縁層2と同質の有機樹脂が露出している
ため有機樹脂絶縁層2と基板1とは極めて強固に接合
し、これによって基板1上に多層配線部4を強固に被着
させておくことができる。The organic resin insulating layer 2 of the multilayer wiring section 4
It is made of an organic resin such as an epoxy resin, a bismaleimide triazine resin, a polyphenylene ether resin, and a fluororesin. For example, when it is made of an epoxy resin, it is amine-cured to a bisphenol A epoxy resin, a novolak epoxy resin, a glycidyl ester epoxy resin, or the like. And a curing agent such as an imidazole-based curing agent and an acid anhydride-based curing agent are added and mixed to obtain a paste-like epoxy resin precursor, and the epoxy resin precursor is applied to the upper portion of the substrate 1 by spin coating. After that, this is brought to 80 ° C. to 200 ° C.
It is formed by heat-treating with heat of 0.5 ° C. for 0.5 to 3 hours and heat curing. In this case, the surface of the substrate 1 is flat,
In addition, since the same organic resin as that of the organic resin insulating layer 2 is exposed, the organic resin insulating layer 2 and the substrate 1 are bonded very firmly, whereby the multilayer wiring portion 4 is firmly adhered on the substrate 1. I can put it.
【0031】また前記多層配線部4の有機樹脂絶縁層2
はその各々の所定位置に最小径が有機樹脂絶縁層2の厚
みに対して約1.5倍程度のスルーホール5が形成され
ており、該スルーホール5は後述する有機樹脂絶縁層2
を介して上下に位置する薄膜配線導体層3の各々を電気
的に接続するスルーホール導体6を形成するための形成
孔として作用する。The organic resin insulating layer 2 of the multilayer wiring section 4
Has a through hole 5 having a minimum diameter of about 1.5 times the thickness of the organic resin insulating layer 2 at each predetermined position.
And acts as a forming hole for forming a through-hole conductor 6 that electrically connects each of the thin film wiring conductor layers 3 located above and below via the through hole.
【0032】前記有機樹脂絶縁層2に設けるスルーホー
ル5は有機樹脂絶縁層2に従来周知のフォトリソグラフ
イー技術を採用することによって、具体的には各有機樹
脂絶縁層2上にレジスト材を塗布するとともにこれに露
光、現像を施すことによって所定位置に所定形状の窓部
を形成し、次に前記レジスト材の窓部にエッチング液を
配し、レジスト材の窓部に位置する有機樹脂絶縁層2を
除去して、有機樹脂絶縁層2に穴(スルーホール)を形
成し、最後に前記レジスト材を有機樹脂絶縁層2上より
剥離させ除去することによって所定の径に形成される。The through-holes 5 provided in the organic resin insulating layer 2 are formed by applying a well-known photolithography technique to the organic resin insulating layer 2, and specifically, applying a resist material on each organic resin insulating layer 2. A window having a predetermined shape is formed at a predetermined position by performing exposure and development thereon, and then an etchant is disposed at the window of the resist material, and an organic resin insulating layer positioned at the window of the resist material is formed. 2, a hole (through hole) is formed in the organic resin insulating layer 2, and finally, the resist material is peeled off from the organic resin insulating layer 2 and removed to form a predetermined diameter.
【0033】更に前記各有機樹脂絶縁層2の上面には所
定パターンの薄膜配線導体層3が、更に各有機樹脂絶縁
層2に設けたスルーホール5の内壁にはスルーホール導
体6が各々形成されており、スルーホール導体6によっ
て間に有機樹脂絶縁層2を挟んで上下に位置する各薄膜
配線導体層3の各々が電気的に接続されるようになって
いる。Further, a thin-film wiring conductor layer 3 having a predetermined pattern is formed on the upper surface of each organic resin insulating layer 2, and a through-hole conductor 6 is formed on the inner wall of the through hole 5 provided in each organic resin insulating layer 2. Each of the thin film wiring conductor layers 3 located above and below the organic resin insulating layer 2 with the through-hole conductor 6 interposed therebetween is electrically connected.
【0034】前記各有機樹脂絶縁層2の上面及びスルー
ホール5の内壁に形成される薄膜配線導体層3及びスル
ーホール導体6は銅、ニッケル、金、アルミニウム等の
金属材料を無電解めっき法や蒸着法、スパッタリング法
等の薄膜形成技術及びフォトリソグラフイー技締を採用
することによって形成され、例えば、銅で形成されてい
る場合には、有機樹脂絶縁層2の上面及びスルーホール
5の内表面に、硫酸銅0.06モル/リットル、ホルマ
リン0.3モル/リットル、水酸化ナトリウム0.35
モル/リットル、エチレンジアミン四酢酸0.35モル
/リットルから成る無電解鋼めっき浴を用いて厚さ1μ
m乃至40μmの銅層を被着させ、しかる後、前記銅層
をフォトリソグラフイー技術を採用することにより所定
パターンに加工することによって各有機樹脂絶縁層2
間、及びスルーホール5内壁に形成される。この場合、
薄膜配線導体層3及びスルーホール導体6は薄膜形成技
術により形成されることから配線の微細化が可能であ
り、これによって薄膜配線導体層3を極めて高密度に形
成することが可能となる。The thin-film wiring conductor layer 3 and the through-hole conductor 6 formed on the upper surface of each organic resin insulating layer 2 and the inner wall of the through-hole 5 are made of a metal material such as copper, nickel, gold, or aluminum by electroless plating. It is formed by adopting a thin film forming technique such as a vapor deposition method and a sputtering method and a photolithographic technique. For example, when it is formed of copper, the upper surface of the organic resin insulating layer 2 and the inner surface of the through hole 5 are formed. 0.06 mol / l copper sulfate, 0.3 mol / l formalin, 0.35 sodium hydroxide
Mol / l, an electroless steel plating bath consisting of 0.35 mol / l of ethylenediaminetetraacetic acid and a thickness of 1 μm.
Each of the organic resin insulating layers 2 is formed by depositing a copper layer having a thickness of 40 μm to 40 μm, and thereafter processing the copper layer into a predetermined pattern by employing photolithography technology.
The gap is formed on the inner wall of the through hole 5. in this case,
Since the thin-film wiring conductor layer 3 and the through-hole conductor 6 are formed by a thin-film forming technique, it is possible to miniaturize the wiring, whereby the thin-film wiring conductor layer 3 can be formed at an extremely high density.
【0035】なお、前記有機樹脂絶縁層2と薄膜配線導
体層3とを交互に多層に積層して形成される多層配線部
4は各有機樹脂絶縁層2の上面を中心線平均粗さ(R
a)で0.05μm≦Ra≦5μmの粗面としておくと
有機樹脂絶縁層2と薄膜配線導体層3との接合及び上下
に位置する有機樹脂絶縁層2同士の接合を強固となすこ
とができる。従って、前記多層配線部4の各有機樹脂絶
縁層2はその上面をエッチング加工法等によって粗し、
中心線平均粗さ(Ra)で0.05μm≦Ra≦5μm
の粗面としておくことが好ましい。The multilayer wiring portion 4 formed by alternately laminating the organic resin insulating layers 2 and the thin film wiring conductor layers 3 in multiple layers has a center line average roughness (R
By setting a rough surface of 0.05 μm ≦ Ra ≦ 5 μm in a), the bonding between the organic resin insulating layer 2 and the thin-film wiring conductor layer 3 and the bonding between the organic resin insulating layers 2 located above and below can be made strong. . Therefore, the upper surface of each organic resin insulating layer 2 of the multilayer wiring portion 4 is roughened by an etching method or the like,
Center line average roughness (Ra): 0.05 μm ≦ Ra ≦ 5 μm
It is preferable to make the surface rough.
【0036】また前記有機樹脂絶縁層2はその表面の
2.5mmの長さにおける凹凸の高さ(Pc)のカウン
ト値を、1μm≦Pc≦10μmが500個以上、0.
1μm≦Pc≦1μmが2500個以上、0.01μm
≦Pc≦0.1μmが12500個以上としておくと有
機樹脂絶縁層2と薄膜配線導体層3との接合及び上下に
位置する有機樹脂絶縁層2同士の接合がより強固とな
る。従って、前記有機樹脂絶縁層2はその表面の2.5
mmの長さにおける凹凸の高さ(Pc)のカウント値
を、1μm≦Pc≦10μmが500個以上、0.1μ
m≦Pc≦1μmが2500個以上、0.01μm≦P
c≦0.1μmが12500個以上としておくとことが
好ましい。The count value of the height (Pc) of the unevenness at a length of 2.5 mm on the surface of the organic resin insulating layer 2 is 500 when 1 μm ≦ Pc ≦ 10 μm.
2500 μm of 1 μm ≦ Pc ≦ 1 μm, 0.01 μm
If ≦ Pc ≦ 0.1 μm is set to 12,500 or more, the bonding between the organic resin insulating layer 2 and the thin-film wiring conductor layer 3 and the bonding between the organic resin insulating layers 2 located above and below become stronger. Therefore, the organic resin insulating layer 2 has a thickness of 2.5
The count value of the height (Pc) of the unevenness in the length of mm is 1 μm ≦ Pc ≦ 10 μm.
2500 or more m ≦ Pc ≦ 1 μm, 0.01 μm ≦ P
It is preferable that c ≦ 0.1 μm is set to 12,500 or more.
【0037】前記有機樹脂絶縁層2上面の中心線平均粗
さ(Ra)及び2.5mmの長さにおける凹凸の高さ
(Pc)のカウント値は、有機樹脂絶縁層2の表面を原
子間力顕微鏡(Digital Instruments Inc.製のDimensio
n 3000-Nano Scope III)で50μm角の対角(70μ
m)に走査させてその表面状態を検査測定し、その測定
結果より各々の数値を出した。The count value of the center line average roughness (Ra) of the upper surface of the organic resin insulating layer 2 and the height of the unevenness (Pc) at a length of 2.5 mm are obtained by measuring the surface of the organic resin insulating layer 2 with an atomic force. Microscope (Dimensio manufactured by Digital Instruments Inc.
n 3000-Nano Scope III)
m), the surface condition was inspected and measured, and each numerical value was obtained from the measurement result.
【0038】また前記中心線平均粗さ(Ra)が0.0
5μm≦Ra≦5μm、2.5mmの長さにおける凹凸
の高さ(Pc)のカウント値が、1μm≦Pc≦10μ
mが500個以上、0.1μm≦Pc≦1μmが250
0個以上、0.01μm≦Pc≦0.1μmが1250
0個以上の有機樹脂絶縁層2は、該有機樹脂絶縁層2の
上面にCHF3 、CF4 、Ar等のガスを吹きつけリア
クティブイオンエッチング処理をすることによって表面
が所定の粗さに粗される。The center line average roughness (Ra) is 0.0
5 μm ≦ Ra ≦ 5 μm, the count value of the height of unevenness (Pc) at a length of 2.5 mm is 1 μm ≦ Pc ≦ 10 μm
m is 500 or more, and 0.1 μm ≦ Pc ≦ 1 μm is 250
0 or more, 0.01 μm ≦ Pc ≦ 0.1 μm is 1250
Zero or more organic resin insulating layers 2 are subjected to a reactive ion etching process by blowing a gas such as CHF 3 , CF 4 , Ar, etc. onto the upper surface of the organic resin insulating layers 2, whereby the surface is roughened to a predetermined roughness. Is done.
【0039】更に前記有機樹脂絶縁層2はその各々の厚
みが100μmを超えると有機樹脂絶縁層2にフォトリ
ソグラフイー技術を採用することによってスルーホール
5を形成する際、エッチング加工時間が長くなってスル
ーホール5を所望する鮮明な形状に形成するのが困難と
なり、また5μm未満となると有機樹脂絶縁層2の上面
に上下に位置する有機樹脂絶縁層2の接合強度を上げる
ための粗面加工を施す際、有機樹脂絶縁層2に不要な穴
が形成され上下に位置する薄膜配線導体層3に不要な電
気的短絡を招来してしまう危険性がある。従って、前記
有機樹脂絶縁層2はその各々の厚みを5μm〜100μ
mの範囲としておくことが好ましい。Further, when the thickness of each of the organic resin insulating layers 2 exceeds 100 μm, the etching processing time becomes long when the through holes 5 are formed by employing photolithography technology in the organic resin insulating layers 2. It is difficult to form the through hole 5 into a desired sharp shape. If the thickness is less than 5 μm, rough surface processing for increasing the bonding strength of the organic resin insulating layer 2 located above and below the organic resin insulating layer 2 is performed. At the time of application, there is a risk that unnecessary holes may be formed in the organic resin insulating layer 2 and unnecessary electrical short circuits may be caused in the thin film wiring conductor layers 3 located above and below. Accordingly, the organic resin insulating layer 2 has a thickness of 5 μm to 100 μm.
It is preferable to set the range of m.
【0040】また更に前記多層配線部4の各薄膜配線導
体層3はその厚みが1μm未満であると各薄膜配線導体
層3の電気抵抗値が大きなものとなって各薄膜配線導体
層3に所定の電気信号を伝達させることが困難となり、
また40μmを超えると薄膜配線導体層3を有機樹脂絶
縁層2に被着させる際に薄膜配線導体層3の内部に大き
な応力が発生内在し、該大きな内在応力によって薄膜配
線導体層3が有機樹脂絶縁層2から剥離し易いものとな
る。従って、前記多層配線部4の各薄膜配線導体層3の
厚みは1μm〜40μmの範囲としておくことが好まし
い。Further, if the thickness of each thin-film wiring conductor layer 3 of the multilayer wiring portion 4 is less than 1 μm, the electric resistance of each thin-film wiring conductor layer 3 becomes large and a predetermined value is applied to each thin-film wiring conductor layer 3. It is difficult to transmit the electric signal of
When the thickness exceeds 40 μm, a large stress is generated inside the thin-film wiring conductor layer 3 when the thin-film wiring conductor layer 3 is adhered to the organic resin insulating layer 2, and the large intrinsic stress causes the thin-film wiring conductor layer 3 to form an organic resin. It becomes easy to peel off from the insulating layer 2. Therefore, it is preferable that the thickness of each thin-film wiring conductor layer 3 of the multilayer wiring portion 4 be in the range of 1 μm to 40 μm.
【0041】前記有機樹脂絶縁層2と薄膜配線導体層3
とを交互に多層に積層して形成される多層配線部4は更
に、最上層の有機樹脂絶縁層2に薄膜配線導体層3と電
気的に接続しているボンディングパッド7が形成されて
おり、該ボンディングパッド7は半導体素子や容量素
子、抵抗器等の電子部品Aの電極を薄膜配線導体層3に
電気的に接続させる作用をなす。The organic resin insulating layer 2 and the thin-film wiring conductor layer 3
And a bonding pad 7 electrically connected to the thin-film wiring conductor layer 3 is further formed on the uppermost organic resin insulating layer 2. The bonding pad 7 has a function of electrically connecting electrodes of the electronic component A such as a semiconductor element, a capacitor element, and a resistor to the thin film wiring conductor layer 3.
【0042】前記ボンディングパッド7は例えば、直径
が200〜500μmの円形状をなしており、該ボンデ
ィングパッド7に半導体素子や容量素子等の電子部品A
の電極をロウ材を介して接続させれば、半導体素子や容
量素子等の電子部品Aの電極は薄膜配線導体層3に電気
的に接続されることとなる。The bonding pad 7 has, for example, a circular shape with a diameter of 200 to 500 μm.
Are connected via a brazing material, the electrodes of the electronic component A such as a semiconductor element and a capacitance element are electrically connected to the thin-film wiring conductor layer 3.
【0043】前記ボンディングパッド7は薄膜配線導体
層3と同じ金属材料、具体的には銅、ニッケル、金、ア
ルミニウム等の金属材料から成り、最上層の有機樹脂絶
縁層2上に薄膜配線導体層3を形成する際に同時に前記
薄膜配線導体層3と電気的接続をもって形成される。The bonding pad 7 is made of the same metal material as the thin film wiring conductor layer 3, specifically, a metal material such as copper, nickel, gold, aluminum, etc., and is formed on the uppermost organic resin insulating layer 2. 3 is formed at the same time as the thin film wiring conductor layer 3 with electrical connection.
【0044】かくして上述の多層配線基板によれば、最
上層の有機樹脂絶縁層2に設けたボンディングパッド7
に半導体素子や容量素子等の電子部品Aの電極を半田等
から成るロウ材を介して接続させ、電子部品Aの電極を
ボンディングパッド7を介して薄膜配線導体層3に電気
的に接続させることによって半導体装置や混成集積回路
装置となり、薄膜配線導体層3の一部を外部電気回路に
接続すれば前記電子部品Aは外部電気回路に接続される
こととなる。Thus, according to the above-described multilayer wiring board, the bonding pads 7 provided on the uppermost organic resin insulating layer 2 are formed.
To the electrodes of the electronic component A such as a semiconductor element and a capacitor via a brazing material made of solder or the like, and to electrically connect the electrodes of the electronic component A to the thin-film wiring conductor layer 3 via the bonding pads 7. As a result, a semiconductor device or a hybrid integrated circuit device is formed. If a part of the thin film wiring conductor layer 3 is connected to an external electric circuit, the electronic component A is connected to the external electric circuit.
【0045】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば上述の実施例において
は基板1の上面側のみに複数の有機樹脂絶縁層2と複数
の薄膜配線導体層3とを交互に積層して形成される多層
配線部4を被着させたが、該多層配線部4を基板1の下
面側のみに設けても、上下の両面に設けてもよい。It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the present invention. A multilayer wiring portion 4 formed by alternately laminating a plurality of organic resin insulating layers 2 and a plurality of thin film wiring conductor layers 3 is applied only on the side of the substrate 1. It may be provided only on the upper and lower surfaces.
【0046】また上述の実施例においては基板1の有機
樹脂を熱硬化性のエポキシ樹脂等で形成したが、これを
光硬化性の樹脂で形成してもよい。この場合、基板1の
有機樹脂は光照射によって固化し、焼成工程を伴わない
ことから焼成に伴う不均一な焼成収縮によって反りや寸
法ばらつきが発生することはなく、その結果、基板1は
その表面が平坦な所定寸法となり、基板1の表面に有機
樹脂絶縁層2と薄膜配線導体層3とから成る多層配線部
4を正確に形成することが可能となる。In the above-described embodiment, the organic resin of the substrate 1 is formed of a thermosetting epoxy resin or the like, but it may be formed of a photocurable resin. In this case, since the organic resin of the substrate 1 is solidified by light irradiation and does not involve a firing step, there is no warpage or dimensional variation due to uneven firing shrinkage due to firing, and as a result, the substrate 1 has its surface Has a flat predetermined dimension, and it is possible to accurately form the multilayer wiring portion 4 including the organic resin insulating layer 2 and the thin film wiring conductor layer 3 on the surface of the substrate 1.
【0047】更に上述の実施例において、基板1の内部
及び表面に導電層を形成しておいてもよい。この場合、
導電層としては銅や銀等から成る金属粉末をエポキシ樹
脂、ポリイミド樹脂、フェール樹脂、熱硬化性ポリフェ
ニレンエーテル樹脂、ポリイミドアミド樹脂、ビスマレ
イミドトリアジン樹脂、ふっ素樹脂等の有機樹脂により
結合したものが好適に使用され、基板1が焼成収縮を殆
どおこさないことから導電層を形成した場合、その導電
層を所定のパターンに極めて正確に形成することができ
る。Further, in the above embodiment, a conductive layer may be formed inside and on the surface of the substrate 1. in this case,
As the conductive layer, it is preferable that a metal powder composed of copper, silver, or the like is bonded with an organic resin such as an epoxy resin, a polyimide resin, a fail resin, a thermosetting polyphenylene ether resin, a polyimide amide resin, a bismaleimide triazine resin, and a fluororesin. When the conductive layer is formed because the substrate 1 hardly shrinks during firing, the conductive layer can be formed very accurately in a predetermined pattern.
【0048】[0048]
【発明の効果】本発明の多層配線基板によれば、有機樹
脂絶縁層と薄膜配線導体層とから成る多層配線部が被着
される基板を有機樹脂中に無機物粉末及び/又は金属粉
末を例えば、20重量%乃至90重量%含有させて形成
したことから基板の熱膨張係数が有機樹脂絶縁層の熱膨
張係数に近似し、その結果、基板と有機樹脂絶縁層に熱
が印加されても両者間には両者の熱膨張係数の相違に起
因する応力が発生することはなく両者を極めて強固に接
合させることができる。According to the multilayer wiring board of the present invention, the substrate on which the multilayer wiring section composed of the organic resin insulating layer and the thin film wiring conductor layer is to be adhered is made by mixing the inorganic powder and / or the metal powder in the organic resin. , 20 to 90% by weight, the thermal expansion coefficient of the substrate is close to the thermal expansion coefficient of the organic resin insulating layer. As a result, even when heat is applied to the substrate and the organic resin insulating layer, There is no stress between the two due to the difference in the coefficient of thermal expansion, and the two can be joined very firmly.
【0049】また本発明の多層配線基板によれば、基板
の多層配線部が接合する表面を有機樹脂のみとし、無機
物粉末及び/又は金属粉末が露出しないようにしたこと
から基板と多層配線部の有機樹脂絶縁層とを極めて強固
に接合させることができる。Further, according to the multilayer wiring board of the present invention, the surface to which the multilayer wiring portion of the substrate is joined is made only of an organic resin and the inorganic powder and / or the metal powder are not exposed, so that the substrate and the multilayer wiring portion are not exposed. The organic resin insulating layer can be bonded very firmly.
【0050】更に本発明の多層配線基板によれば、基板
を靱性に優れる有機樹脂中に無機物粉末及び/又は金属
粉末を含有させることによって形成したことから基板の
機械的強度が強くなり、外部より衝撃力が印加されても
容易に破損することはない。Further, according to the multilayer wiring board of the present invention, since the board is formed by incorporating an inorganic powder and / or a metal powder in an organic resin having excellent toughness, the mechanical strength of the board is increased, and Even if an impact force is applied, it is not easily broken.
【0051】また更に本発明の多層配線基板によれば、
基板は有機樹脂中に無機物粉末及び/又は金属粉末を含
有させることによって形成され、有機樹脂は熱硬化もし
くは光硬化によって固化し、焼成工程を伴わないことか
ら焼成に伴う不均一な焼成収縮によって反りや寸法ばら
つきを発生することもなく、その結果、基板はその表面
を平坦とした所定寸法となし、基板の表面に有機樹脂絶
縁層と薄膜配線導体層とを正確に形成することが可能と
なる。Further, according to the multilayer wiring board of the present invention,
The substrate is formed by incorporating an inorganic powder and / or a metal powder into an organic resin, and the organic resin is solidified by thermosetting or photocuring, and does not involve a sintering process. As a result, the substrate does not have a predetermined size with its surface flat, and the organic resin insulating layer and the thin-film wiring conductor layer can be accurately formed on the surface of the substrate. .
【図1】本発明の多層配線基板の一実施例を示す断面図
である。FIG. 1 is a sectional view showing one embodiment of a multilayer wiring board of the present invention.
1・・・基板 2・・・有機樹脂絶縁層 3・・・薄膜配線導体層 4・・・多層配線部 5・・・スルーホール 6・・・スルーホール導体 7・・・ボンディングパッド A・・・電子部品 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Organic resin insulating layer 3 ... Thin film wiring conductor layer 4 ... Multilayer wiring part 5 ... Through-hole 6 ... Through-hole conductor 7 ... Bonding pad A ...・ Electronic parts
Claims (3)
され、複数の有機樹脂絶縁層と薄膜配線導体層とを交互
に積層するとともに上下に位置する薄膜配線導体層を有
機樹脂絶縁層に設けたスルーホール導体を介して電気的
に接続した多層配線部とから成る多層配線基板であっ
て、前記基板は有機樹脂中に無機物粉末及び/又は金属
粉末を含有させて形成されており、かつ多層配線部の被
着される表面が有機樹脂のみで形成されていることを特
徴とする多層配線基板。1. A substrate and a plurality of organic resin insulating layers and a thin film wiring conductor layer which are attached to at least one main surface of the substrate and are alternately laminated, and the upper and lower thin film wiring conductor layers are organic resin insulation layers. A multilayer wiring board comprising: a multilayer wiring portion electrically connected via a through-hole conductor provided in a layer; wherein the substrate is formed by including an inorganic powder and / or a metal powder in an organic resin. A multilayer wiring board, wherein the surface of the multilayer wiring portion to be attached is formed only of an organic resin.
が0.05μm乃至10μmであることを特徴とする請
求項1記載の多層配線基板。2. The multilayer wiring board according to claim 1, wherein the particle diameter of the inorganic powder and / or the metal powder is 0.05 μm to 10 μm.
量が20重量%乃至90重量%であることを特徴とする
請求項1記載の多層配線基板。3. The multilayer wiring board according to claim 1, wherein the content of said inorganic powder and / or metal powder is 20% by weight to 90% by weight.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15382997A JPH114079A (en) | 1997-06-11 | 1997-06-11 | Multilayer wiring board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15382997A JPH114079A (en) | 1997-06-11 | 1997-06-11 | Multilayer wiring board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH114079A true JPH114079A (en) | 1999-01-06 |
Family
ID=15571008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15382997A Pending JPH114079A (en) | 1997-06-11 | 1997-06-11 | Multilayer wiring board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH114079A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009111358A (en) * | 2007-10-12 | 2009-05-21 | Shinko Electric Ind Co Ltd | Wiring board |
| US7551265B2 (en) * | 2004-10-01 | 2009-06-23 | Nikon Corporation | Contact material and system for ultra-clean applications |
-
1997
- 1997-06-11 JP JP15382997A patent/JPH114079A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7551265B2 (en) * | 2004-10-01 | 2009-06-23 | Nikon Corporation | Contact material and system for ultra-clean applications |
| JP2009111358A (en) * | 2007-10-12 | 2009-05-21 | Shinko Electric Ind Co Ltd | Wiring board |
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