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Kouda et al., 2011 - Google Patents
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Kouda et al., 2011 - Google Patents

Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5 nm

Kouda et al., 2011

Document ID
2239750124927870472
Author
Kouda M
Kakushima K
Ahmet P
Tsutsui K
Nishiyama A
Sugii N
Natori K
Hattori T
Iwai H
Publication year
Publication venue
Japanese journal of applied physics

External Links

Snippet

The capping La2O3 gate dielectric with rare earth oxide (Ce, Pr, Nd, and Tm oxides) and the influence of rare earth oxides on the interface reaction have been examined and the electrical characteristics have been evaluated. The formation of Si-rich silicate phase in the …
Continue reading at iopscience.iop.org (other versions)

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