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Aichele et al., 2010 - Google Patents
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Aichele et al., 2010 - Google Patents

Nanowire quantum dots

Aichele et al., 2010

Document ID
2539871889474234949
Author
Aichele T
Sallen G
Bougerol C
André R
Publication year
Publication venue
Semiconductor Nanomaterials

External Links

Snippet

Over the past few decades, the use of semiconductor quantum dots (QDs) has become widespread in the development of new light sources, such as lasers, lightemitting diodes (LEDs), and single-photon sources, for nanoelectronic devices, and also in chemistry and …
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y10/00—Nano-technology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y20/00—Nano-optics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y30/00—Nano-technology for materials or surface science, e.g. nano-composites
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y15/00—Nano-technology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANO-TECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE OR TREATMENT OF NANO-STRUCTURES
    • B82Y40/00—Manufacture or treatment of nano-structures

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