Liang et al., 2007 - Google Patents
Mechanisms for on/off currents in dual‐gate a‐Si: H thin‐film transistors using indium‐tin‐oxide top‐gate electrodesLiang et al., 2007
- Document ID
- 2899484087076643984
- Author
- Liang C
- Gan F
- Yeh F
- Chang T
- Publication year
- Publication venue
- Journal of the Society for Information Display
External Links
Snippet
Two types of dual‐gate a‐Si: H TFTs were made with transparent indium‐tin‐oxide (ITO) top‐ gate electrodes of different lengths to investigate the static characteristics of these devices. By changing the length of the ITO top gate, we found that the variations in the on‐currents of …
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin data:image/svg+xml;base64,<?xml version='1.0' encoding='iso-8859-1'?>
<svg version='1.1' baseProfile='full'
              xmlns='http://www.w3.org/2000/svg'
                      xmlns:rdkit='http://www.rdkit.org/xml'
                      xmlns:xlink='http://www.w3.org/1999/xlink'
                  xml:space='preserve'
width='300px' height='300px' viewBox='0 0 300 300'>
<!-- END OF HEADER -->
<rect style='opacity:1.0;fill:#FFFFFF;stroke:none' width='300.0' height='300.0' x='0.0' y='0.0'> </rect>
<path class='bond-0 atom-1 atom-2' d='M 183.6,203.4 L 134.1,203.4' style='fill:none;fill-rule:evenodd;stroke:#3B4143;stroke-width:2.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<path class='bond-0 atom-1 atom-2' d='M 134.1,203.4 L 84.7,203.4' style='fill:none;fill-rule:evenodd;stroke:#E84235;stroke-width:2.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<path class='bond-0 atom-1 atom-2' d='M 183.6,247.6 L 134.1,247.6' style='fill:none;fill-rule:evenodd;stroke:#3B4143;stroke-width:2.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<path class='bond-0 atom-1 atom-2' d='M 134.1,247.6 L 84.7,247.6' style='fill:none;fill-rule:evenodd;stroke:#E84235;stroke-width:2.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<text x='128.9' y='98.4' class='atom-0' style='font-size:40px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >I</text>
<text x='142.7' y='98.4' class='atom-0' style='font-size:40px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >n</text>
<text x='233.2' y='245.5' class='atom-1' style='font-size:40px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >S</text>
<text x='260.8' y='245.5' class='atom-1' style='font-size:40px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >n</text>
<text x='12.5' y='245.5' class='atom-2' style='font-size:40px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#E84235' >O</text>
<path d='M 171.2,78.4 L 171.2,78.2 L 171.2,78.0 L 171.2,77.9 L 171.1,77.7 L 171.1,77.5 L 171.0,77.4 L 170.9,77.2 L 170.8,77.1 L 170.7,77.0 L 170.6,76.9 L 170.4,76.8 L 170.3,76.7 L 170.1,76.6 L 170.0,76.5 L 169.8,76.5 L 169.6,76.4 L 169.5,76.4 L 169.3,76.4 L 169.1,76.4 L 168.9,76.4 L 168.8,76.4 L 168.6,76.5 L 168.5,76.5 L 168.3,76.6 L 168.2,76.7 L 168.0,76.8 L 167.9,76.9 L 167.8,77.0 L 167.7,77.2 L 167.6,77.3 L 167.5,77.5 L 167.4,77.6 L 167.3,77.8 L 167.3,78.0 L 167.3,78.1 L 167.2,78.3 L 167.2,78.5 L 167.3,78.6 L 167.3,78.8 L 167.3,79.0 L 167.4,79.1 L 167.5,79.3 L 167.6,79.4 L 167.7,79.6 L 167.8,79.7 L 167.9,79.8 L 168.0,80.0 L 168.2,80.1 L 168.3,80.1 L 168.5,80.2 L 168.6,80.3 L 168.8,80.3 L 168.9,80.4 L 169.1,80.4 L 169.3,80.4 L 169.5,80.4 L 169.6,80.3 L 169.8,80.3 L 170.0,80.2 L 170.1,80.2 L 170.3,80.1 L 170.4,80.0 L 170.6,79.9 L 170.7,79.8 L 170.8,79.7 L 170.9,79.5 L 171.0,79.4 L 171.1,79.2 L 171.1,79.1 L 171.2,78.9 L 171.2,78.7 L 171.2,78.6 L 171.2,78.4 L 169.2,78.4 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 171.2,98.5 L 171.2,98.3 L 171.2,98.1 L 171.2,97.9 L 171.1,97.8 L 171.1,97.6 L 171.0,97.5 L 170.9,97.3 L 170.8,97.2 L 170.7,97.1 L 170.6,96.9 L 170.4,96.8 L 170.3,96.7 L 170.1,96.7 L 170.0,96.6 L 169.8,96.5 L 169.6,96.5 L 169.5,96.5 L 169.3,96.5 L 169.1,96.5 L 168.9,96.5 L 168.8,96.5 L 168.6,96.6 L 168.5,96.6 L 168.3,96.7 L 168.2,96.8 L 168.0,96.9 L 167.9,97.0 L 167.8,97.1 L 167.7,97.2 L 167.6,97.4 L 167.5,97.5 L 167.4,97.7 L 167.3,97.9 L 167.3,98.0 L 167.3,98.2 L 167.2,98.4 L 167.2,98.5 L 167.3,98.7 L 167.3,98.9 L 167.3,99.0 L 167.4,99.2 L 167.5,99.4 L 167.6,99.5 L 167.7,99.7 L 167.8,99.8 L 167.9,99.9 L 168.0,100.0 L 168.2,100.1 L 168.3,100.2 L 168.5,100.3 L 168.6,100.3 L 168.8,100.4 L 168.9,100.4 L 169.1,100.4 L 169.3,100.4 L 169.5,100.4 L 169.6,100.4 L 169.8,100.4 L 170.0,100.3 L 170.1,100.2 L 170.3,100.2 L 170.4,100.1 L 170.6,100.0 L 170.7,99.8 L 170.8,99.7 L 170.9,99.6 L 171.0,99.4 L 171.1,99.3 L 171.1,99.1 L 171.2,99.0 L 171.2,98.8 L 171.2,98.6 L 171.2,98.5 L 169.2,98.5 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 171.2,58.3 L 171.2,58.1 L 171.2,58.0 L 171.2,57.8 L 171.1,57.6 L 171.1,57.5 L 171.0,57.3 L 170.9,57.2 L 170.8,57.0 L 170.7,56.9 L 170.6,56.8 L 170.4,56.7 L 170.3,56.6 L 170.1,56.5 L 170.0,56.4 L 169.8,56.4 L 169.6,56.3 L 169.5,56.3 L 169.3,56.3 L 169.1,56.3 L 168.9,56.3 L 168.8,56.4 L 168.6,56.4 L 168.5,56.5 L 168.3,56.6 L 168.2,56.6 L 168.0,56.7 L 167.9,56.9 L 167.8,57.0 L 167.7,57.1 L 167.6,57.3 L 167.5,57.4 L 167.4,57.6 L 167.3,57.7 L 167.3,57.9 L 167.3,58.1 L 167.2,58.2 L 167.2,58.4 L 167.3,58.6 L 167.3,58.7 L 167.3,58.9 L 167.4,59.1 L 167.5,59.2 L 167.6,59.4 L 167.7,59.5 L 167.8,59.6 L 167.9,59.8 L 168.0,59.9 L 168.2,60.0 L 168.3,60.1 L 168.5,60.1 L 168.6,60.2 L 168.8,60.3 L 168.9,60.3 L 169.1,60.3 L 169.3,60.3 L 169.5,60.3 L 169.6,60.3 L 169.8,60.2 L 170.0,60.2 L 170.1,60.1 L 170.3,60.0 L 170.4,59.9 L 170.6,59.8 L 170.7,59.7 L 170.8,59.6 L 170.9,59.4 L 171.0,59.3 L 171.1,59.1 L 171.1,59.0 L 171.2,58.8 L 171.2,58.7 L 171.2,58.5 L 171.2,58.3 L 169.2,58.3 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 171.2,78.4 L 171.2,78.2 L 171.2,78.0 L 171.2,77.9 L 171.1,77.7 L 171.1,77.5 L 171.0,77.4 L 170.9,77.2 L 170.8,77.1 L 170.7,77.0 L 170.6,76.9 L 170.4,76.8 L 170.3,76.7 L 170.1,76.6 L 170.0,76.5 L 169.8,76.5 L 169.6,76.4 L 169.5,76.4 L 169.3,76.4 L 169.1,76.4 L 168.9,76.4 L 168.8,76.4 L 168.6,76.5 L 168.5,76.5 L 168.3,76.6 L 168.2,76.7 L 168.0,76.8 L 167.9,76.9 L 167.8,77.0 L 167.7,77.2 L 167.6,77.3 L 167.5,77.5 L 167.4,77.6 L 167.3,77.8 L 167.3,78.0 L 167.3,78.1 L 167.2,78.3 L 167.2,78.5 L 167.3,78.6 L 167.3,78.8 L 167.3,79.0 L 167.4,79.1 L 167.5,79.3 L 167.6,79.4 L 167.7,79.6 L 167.8,79.7 L 167.9,79.8 L 168.0,80.0 L 168.2,80.1 L 168.3,80.1 L 168.5,80.2 L 168.6,80.3 L 168.8,80.3 L 168.9,80.4 L 169.1,80.4 L 169.3,80.4 L 169.5,80.4 L 169.6,80.3 L 169.8,80.3 L 170.0,80.2 L 170.1,80.2 L 170.3,80.1 L 170.4,80.0 L 170.6,79.9 L 170.7,79.8 L 170.8,79.7 L 170.9,79.5 L 171.0,79.4 L 171.1,79.2 L 171.1,79.1 L 171.2,78.9 L 171.2,78.7 L 171.2,78.6 L 171.2,78.4 L 169.2,78.4 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 285.1,221.5 L 285.0,221.3 L 285.0,221.2 L 285.0,221.0 L 284.9,220.8 L 284.9,220.7 L 284.8,220.5 L 284.7,220.4 L 284.6,220.2 L 284.5,220.1 L 284.4,220.0 L 284.2,219.9 L 284.1,219.8 L 283.9,219.7 L 283.8,219.6 L 283.6,219.6 L 283.4,219.5 L 283.3,219.5 L 283.1,219.5 L 282.9,219.5 L 282.8,219.5 L 282.6,219.6 L 282.4,219.6 L 282.3,219.7 L 282.1,219.7 L 282.0,219.8 L 281.8,219.9 L 281.7,220.1 L 281.6,220.2 L 281.5,220.3 L 281.4,220.4 L 281.3,220.6 L 281.2,220.8 L 281.1,220.9 L 281.1,221.1 L 281.1,221.3 L 281.1,221.4 L 281.1,221.6 L 281.1,221.8 L 281.1,221.9 L 281.1,222.1 L 281.2,222.3 L 281.3,222.4 L 281.4,222.6 L 281.5,222.7 L 281.6,222.8 L 281.7,223.0 L 281.8,223.1 L 282.0,223.2 L 282.1,223.3 L 282.3,223.3 L 282.4,223.4 L 282.6,223.5 L 282.8,223.5 L 282.9,223.5 L 283.1,223.5 L 283.3,223.5 L 283.4,223.5 L 283.6,223.4 L 283.8,223.4 L 283.9,223.3 L 284.1,223.2 L 284.2,223.1 L 284.4,223.0 L 284.5,222.9 L 284.6,222.8 L 284.7,222.6 L 284.8,222.5 L 284.9,222.3 L 284.9,222.2 L 285.0,222.0 L 285.0,221.9 L 285.0,221.7 L 285.1,221.5 L 283.1,221.5 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 285.1,229.5 L 285.0,229.3 L 285.0,229.2 L 285.0,229.0 L 284.9,228.8 L 284.9,228.7 L 284.8,228.5 L 284.7,228.4 L 284.6,228.2 L 284.5,228.1 L 284.4,228.0 L 284.2,227.9 L 284.1,227.8 L 283.9,227.7 L 283.8,227.6 L 283.6,227.6 L 283.4,227.5 L 283.3,227.5 L 283.1,227.5 L 282.9,227.5 L 282.8,227.5 L 282.6,227.6 L 282.4,227.6 L 282.3,227.7 L 282.1,227.7 L 282.0,227.8 L 281.8,227.9 L 281.7,228.1 L 281.6,228.2 L 281.5,228.3 L 281.4,228.4 L 281.3,228.6 L 281.2,228.8 L 281.1,228.9 L 281.1,229.1 L 281.1,229.3 L 281.1,229.4 L 281.1,229.6 L 281.1,229.8 L 281.1,229.9 L 281.1,230.1 L 281.2,230.3 L 281.3,230.4 L 281.4,230.6 L 281.5,230.7 L 281.6,230.8 L 281.7,231.0 L 281.8,231.1 L 282.0,231.2 L 282.1,231.3 L 282.3,231.3 L 282.4,231.4 L 282.6,231.5 L 282.8,231.5 L 282.9,231.5 L 283.1,231.5 L 283.3,231.5 L 283.4,231.5 L 283.6,231.4 L 283.8,231.4 L 283.9,231.3 L 284.1,231.2 L 284.2,231.1 L 284.4,231.0 L 284.5,230.9 L 284.6,230.8 L 284.7,230.6 L 284.8,230.5 L 284.9,230.3 L 284.9,230.2 L 285.0,230.0 L 285.0,229.9 L 285.0,229.7 L 285.1,229.5 L 283.1,229.5 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
</svg>
 data:image/svg+xml;base64,<?xml version='1.0' encoding='iso-8859-1'?>
<svg version='1.1' baseProfile='full'
              xmlns='http://www.w3.org/2000/svg'
                      xmlns:rdkit='http://www.rdkit.org/xml'
                      xmlns:xlink='http://www.w3.org/1999/xlink'
                  xml:space='preserve'
width='85px' height='85px' viewBox='0 0 85 85'>
<!-- END OF HEADER -->
<rect style='opacity:1.0;fill:#FFFFFF;stroke:none' width='85.0' height='85.0' x='0.0' y='0.0'> </rect>
<path class='bond-0 atom-1 atom-2' d='M 51.9,51.6 L 34.2,51.6' style='fill:none;fill-rule:evenodd;stroke:#3B4143;stroke-width:1.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<path class='bond-0 atom-1 atom-2' d='M 34.2,51.6 L 16.4,51.6' style='fill:none;fill-rule:evenodd;stroke:#E84235;stroke-width:1.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<path class='bond-0 atom-1 atom-2' d='M 51.9,61.6 L 34.2,61.6' style='fill:none;fill-rule:evenodd;stroke:#3B4143;stroke-width:1.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<path class='bond-0 atom-1 atom-2' d='M 34.2,61.6 L 16.4,61.6' style='fill:none;fill-rule:evenodd;stroke:#E84235;stroke-width:1.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1' />
<text x='31.3' y='33.4' class='atom-0' style='font-size:19px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >I</text>
<text x='38.1' y='33.4' class='atom-0' style='font-size:19px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >n</text>
<text x='53.2' y='66.6' class='atom-1' style='font-size:19px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >S</text>
<text x='66.9' y='66.6' class='atom-1' style='font-size:19px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#3B4143' >n</text>
<text x='3.4' y='66.6' class='atom-2' style='font-size:19px;font-style:normal;font-weight:normal;fill-opacity:1;stroke:none;font-family:sans-serif;text-anchor:start;fill:#E84235' >O</text>
<path d='M 54.1,23.4 L 54.1,23.3 L 54.1,23.2 L 54.0,23.1 L 54.0,23.1 L 54.0,23.0 L 53.9,22.9 L 53.9,22.8 L 53.9,22.8 L 53.8,22.7 L 53.7,22.6 L 53.7,22.6 L 53.6,22.5 L 53.5,22.5 L 53.4,22.5 L 53.4,22.4 L 53.3,22.4 L 53.2,22.4 L 53.1,22.4 L 53.0,22.4 L 52.9,22.4 L 52.8,22.4 L 52.8,22.5 L 52.7,22.5 L 52.6,22.5 L 52.5,22.6 L 52.5,22.6 L 52.4,22.7 L 52.3,22.7 L 52.3,22.8 L 52.2,22.9 L 52.2,22.9 L 52.2,23.0 L 52.1,23.1 L 52.1,23.2 L 52.1,23.3 L 52.1,23.4 L 52.1,23.4 L 52.1,23.5 L 52.1,23.6 L 52.1,23.7 L 52.2,23.8 L 52.2,23.9 L 52.2,23.9 L 52.3,24.0 L 52.3,24.1 L 52.4,24.1 L 52.5,24.2 L 52.5,24.2 L 52.6,24.3 L 52.7,24.3 L 52.8,24.3 L 52.8,24.4 L 52.9,24.4 L 53.0,24.4 L 53.1,24.4 L 53.2,24.4 L 53.3,24.4 L 53.4,24.4 L 53.4,24.3 L 53.5,24.3 L 53.6,24.3 L 53.7,24.2 L 53.7,24.2 L 53.8,24.1 L 53.9,24.0 L 53.9,24.0 L 53.9,23.9 L 54.0,23.8 L 54.0,23.7 L 54.0,23.7 L 54.1,23.6 L 54.1,23.5 L 54.1,23.4 L 53.1,23.4 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 54.1,27.4 L 54.1,27.3 L 54.1,27.2 L 54.0,27.1 L 54.0,27.1 L 54.0,27.0 L 53.9,26.9 L 53.9,26.8 L 53.9,26.8 L 53.8,26.7 L 53.7,26.6 L 53.7,26.6 L 53.6,26.5 L 53.5,26.5 L 53.4,26.5 L 53.4,26.4 L 53.3,26.4 L 53.2,26.4 L 53.1,26.4 L 53.0,26.4 L 52.9,26.4 L 52.8,26.4 L 52.8,26.4 L 52.7,26.5 L 52.6,26.5 L 52.5,26.6 L 52.5,26.6 L 52.4,26.7 L 52.3,26.7 L 52.3,26.8 L 52.2,26.9 L 52.2,26.9 L 52.2,27.0 L 52.1,27.1 L 52.1,27.2 L 52.1,27.3 L 52.1,27.3 L 52.1,27.4 L 52.1,27.5 L 52.1,27.6 L 52.1,27.7 L 52.2,27.8 L 52.2,27.8 L 52.2,27.9 L 52.3,28.0 L 52.3,28.1 L 52.4,28.1 L 52.5,28.2 L 52.5,28.2 L 52.6,28.3 L 52.7,28.3 L 52.8,28.3 L 52.8,28.4 L 52.9,28.4 L 53.0,28.4 L 53.1,28.4 L 53.2,28.4 L 53.3,28.4 L 53.4,28.3 L 53.4,28.3 L 53.5,28.3 L 53.6,28.2 L 53.7,28.2 L 53.7,28.1 L 53.8,28.1 L 53.9,28.0 L 53.9,28.0 L 53.9,27.9 L 54.0,27.8 L 54.0,27.7 L 54.0,27.6 L 54.1,27.6 L 54.1,27.5 L 54.1,27.4 L 53.1,27.4 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 54.1,19.4 L 54.1,19.3 L 54.1,19.2 L 54.0,19.2 L 54.0,19.1 L 54.0,19.0 L 53.9,18.9 L 53.9,18.9 L 53.9,18.8 L 53.8,18.7 L 53.7,18.7 L 53.7,18.6 L 53.6,18.6 L 53.5,18.5 L 53.4,18.5 L 53.4,18.5 L 53.3,18.4 L 53.2,18.4 L 53.1,18.4 L 53.0,18.4 L 52.9,18.4 L 52.8,18.4 L 52.8,18.5 L 52.7,18.5 L 52.6,18.5 L 52.5,18.6 L 52.5,18.6 L 52.4,18.7 L 52.3,18.7 L 52.3,18.8 L 52.2,18.9 L 52.2,19.0 L 52.2,19.0 L 52.1,19.1 L 52.1,19.2 L 52.1,19.3 L 52.1,19.4 L 52.1,19.5 L 52.1,19.5 L 52.1,19.6 L 52.1,19.7 L 52.2,19.8 L 52.2,19.9 L 52.2,19.9 L 52.3,20.0 L 52.3,20.1 L 52.4,20.1 L 52.5,20.2 L 52.5,20.2 L 52.6,20.3 L 52.7,20.3 L 52.8,20.4 L 52.8,20.4 L 52.9,20.4 L 53.0,20.4 L 53.1,20.4 L 53.2,20.4 L 53.3,20.4 L 53.4,20.4 L 53.4,20.3 L 53.5,20.3 L 53.6,20.3 L 53.7,20.2 L 53.7,20.2 L 53.8,20.1 L 53.9,20.0 L 53.9,20.0 L 53.9,19.9 L 54.0,19.8 L 54.0,19.8 L 54.0,19.7 L 54.1,19.6 L 54.1,19.5 L 54.1,19.4 L 53.1,19.4 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 54.1,23.4 L 54.1,23.3 L 54.1,23.2 L 54.0,23.1 L 54.0,23.1 L 54.0,23.0 L 53.9,22.9 L 53.9,22.8 L 53.9,22.8 L 53.8,22.7 L 53.7,22.6 L 53.7,22.6 L 53.6,22.5 L 53.5,22.5 L 53.4,22.5 L 53.4,22.4 L 53.3,22.4 L 53.2,22.4 L 53.1,22.4 L 53.0,22.4 L 52.9,22.4 L 52.8,22.4 L 52.8,22.5 L 52.7,22.5 L 52.6,22.5 L 52.5,22.6 L 52.5,22.6 L 52.4,22.7 L 52.3,22.7 L 52.3,22.8 L 52.2,22.9 L 52.2,22.9 L 52.2,23.0 L 52.1,23.1 L 52.1,23.2 L 52.1,23.3 L 52.1,23.4 L 52.1,23.4 L 52.1,23.5 L 52.1,23.6 L 52.1,23.7 L 52.2,23.8 L 52.2,23.9 L 52.2,23.9 L 52.3,24.0 L 52.3,24.1 L 52.4,24.1 L 52.5,24.2 L 52.5,24.2 L 52.6,24.3 L 52.7,24.3 L 52.8,24.3 L 52.8,24.4 L 52.9,24.4 L 53.0,24.4 L 53.1,24.4 L 53.2,24.4 L 53.3,24.4 L 53.4,24.4 L 53.4,24.3 L 53.5,24.3 L 53.6,24.3 L 53.7,24.2 L 53.7,24.2 L 53.8,24.1 L 53.9,24.0 L 53.9,24.0 L 53.9,23.9 L 54.0,23.8 L 54.0,23.7 L 54.0,23.7 L 54.1,23.6 L 54.1,23.5 L 54.1,23.4 L 53.1,23.4 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 80.9,54.6 L 80.9,54.5 L 80.9,54.5 L 80.9,54.4 L 80.8,54.3 L 80.8,54.2 L 80.8,54.1 L 80.7,54.1 L 80.7,54.0 L 80.6,53.9 L 80.5,53.9 L 80.5,53.8 L 80.4,53.8 L 80.3,53.7 L 80.2,53.7 L 80.2,53.7 L 80.1,53.6 L 80.0,53.6 L 79.9,53.6 L 79.8,53.6 L 79.7,53.6 L 79.7,53.7 L 79.6,53.7 L 79.5,53.7 L 79.4,53.7 L 79.3,53.8 L 79.3,53.8 L 79.2,53.9 L 79.1,54.0 L 79.1,54.0 L 79.0,54.1 L 79.0,54.2 L 79.0,54.2 L 78.9,54.3 L 78.9,54.4 L 78.9,54.5 L 78.9,54.6 L 78.9,54.7 L 78.9,54.7 L 78.9,54.8 L 78.9,54.9 L 79.0,55.0 L 79.0,55.1 L 79.0,55.1 L 79.1,55.2 L 79.1,55.3 L 79.2,55.3 L 79.3,55.4 L 79.3,55.5 L 79.4,55.5 L 79.5,55.5 L 79.6,55.6 L 79.7,55.6 L 79.7,55.6 L 79.8,55.6 L 79.9,55.6 L 80.0,55.6 L 80.1,55.6 L 80.2,55.6 L 80.2,55.6 L 80.3,55.5 L 80.4,55.5 L 80.5,55.4 L 80.5,55.4 L 80.6,55.3 L 80.7,55.3 L 80.7,55.2 L 80.8,55.1 L 80.8,55.0 L 80.8,55.0 L 80.9,54.9 L 80.9,54.8 L 80.9,54.7 L 80.9,54.6 L 79.9,54.6 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
<path d='M 80.9,58.6 L 80.9,58.5 L 80.9,58.4 L 80.9,58.4 L 80.8,58.3 L 80.8,58.2 L 80.8,58.1 L 80.7,58.0 L 80.7,58.0 L 80.6,57.9 L 80.5,57.9 L 80.5,57.8 L 80.4,57.8 L 80.3,57.7 L 80.2,57.7 L 80.2,57.6 L 80.1,57.6 L 80.0,57.6 L 79.9,57.6 L 79.8,57.6 L 79.7,57.6 L 79.7,57.6 L 79.6,57.7 L 79.5,57.7 L 79.4,57.7 L 79.3,57.8 L 79.3,57.8 L 79.2,57.9 L 79.1,57.9 L 79.1,58.0 L 79.0,58.1 L 79.0,58.2 L 79.0,58.2 L 78.9,58.3 L 78.9,58.4 L 78.9,58.5 L 78.9,58.6 L 78.9,58.6 L 78.9,58.7 L 78.9,58.8 L 78.9,58.9 L 79.0,59.0 L 79.0,59.1 L 79.0,59.1 L 79.1,59.2 L 79.1,59.3 L 79.2,59.3 L 79.3,59.4 L 79.3,59.4 L 79.4,59.5 L 79.5,59.5 L 79.6,59.6 L 79.7,59.6 L 79.7,59.6 L 79.8,59.6 L 79.9,59.6 L 80.0,59.6 L 80.1,59.6 L 80.2,59.6 L 80.2,59.5 L 80.3,59.5 L 80.4,59.5 L 80.5,59.4 L 80.5,59.4 L 80.6,59.3 L 80.7,59.2 L 80.7,59.2 L 80.8,59.1 L 80.8,59.0 L 80.8,58.9 L 80.9,58.9 L 80.9,58.8 L 80.9,58.7 L 80.9,58.6 L 79.9,58.6 Z' style='fill:#000000;fill-rule:evenodd;fill-opacity:1;stroke:#000000;stroke-width:0.0px;stroke-linecap:butt;stroke-linejoin:miter;stroke-opacity:1;' />
</svg>
 [In].[Sn]=O 0 title abstract description 33
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/40—Electrodes; Multistep manufacturing processes therefor
- H01L29/43—Electrodes; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/40—Electrodes; Multistep manufacturing processes therefor
- H01L29/41—Electrodes; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro or nanocrystalline silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102246310B (en) | Thin film transistor and display device | |
| US20110012125A1 (en) | Thin film transistor and active matrix display | |
| Takechi et al. | Dual-Gate Characteristics of Amorphous $\hbox {InGaZnO} _ {4} $ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors | |
| WO2021073253A1 (en) | Thin film transistor and manufacturing method therefor, array substrate, and display apparatus | |
| US11264507B2 (en) | Thin film transistor and method for manufacturing the same, array substrate and electronic device | |
| GB2557709A (en) | Active matrix OLED display with normally-on thin-film transistors | |
| KR101901251B1 (en) | Oxide semiconductor thin film transistor and method for manifacturing the same | |
| US5703382A (en) | Array having multiple channel structures with continuously doped interchannel regions | |
| US20170162710A1 (en) | Method for Fabricating Enhancement-mode Field Effect Transistor Having Metal Oxide Channel Layer | |
| CN100385677C (en) | Insulated gate transistor, transistor circuit, transistor device and method for operating a transistor | |
| WO2020128508A1 (en) | Schottky barrier thin film transistor and its method of manufacture | |
| CN111146212A (en) | semiconductor substrate | |
| Takechi et al. | Characterization of top-gate effects in amorphous InGaZnO4 thin-film transistors using a dual-gate structure | |
| US6566714B2 (en) | Electronic device including a thin film transistor | |
| Lee et al. | Asymmetric electrical properties of Corbino a-Si: H TFT and concepts of its application to flat panel displays | |
| Li et al. | Widely adjusting the breakdown voltages of kilo-voltage thin film transistors | |
| Karim et al. | High voltage amorphous silicon TFT for use in large area applications | |
| Liang et al. | Mechanisms for on/off currents in dual‐gate a‐Si: H thin‐film transistors using indium‐tin‐oxide top‐gate electrodes | |
| Lee et al. | Asymmetric electrical properties of fork a-Si: H thin-film transistor and its application to flat panel displays | |
| Liang et al. | A novel self-aligned etch-stopper structure with lower photo leakage for AMLCD and sensor applications | |
| Yamaji et al. | Characterization of photo leakage current of amorphous silicon thin-film transistors | |
| Takechi et al. | Study on current crowding in the output characteristics of amorphous InGaZnO4 thin-film transistors using dual-gate structures with various active-layer thicknesses | |
| JP4238155B2 (en) | Thin film transistor substrate, liquid crystal display device including the same, and manufacturing method thereof | |
| JPH11154752A (en) | Thin film transistor, liquid crystal display device using the same and manufacture of tft array substrate | |
| Moon et al. | Characteristics of amorphous silicon dual-gate thin film transistor using back gate of pixel electrode for liquid crystal display driver |