Chaoui et al., 2013 - Google Patents
Improvement of screen-printed textured monocrystalline silicon solar cell performance by metal-assisted chemical etchingChaoui et al., 2013
View PDF- Document ID
- 6557437109676665534
- Author
- Chaoui R
- Mahmoudi B
- Ahmed Y
- Publication year
- Publication venue
- Energy Procedia
External Links
Snippet
In this work, we investigate the potential use of stain etched porous silicon as one possible way to increase the silicon solar cell efficiency at low cost. A very simple method for the formation of porous silicon antireflection coatings on random pyramid textured screen …
- 229910052751 metal 0 title abstract description 11
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- Y02E—REDUCTION OF GREENHOUSE GASES [GHG] EMISSION, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/54—Material technologies
- Y02E10/547—Monocrystalline silicon PV cells
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y02E10/543—Solar cells from Group II-VI materials
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- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/18—Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
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- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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