Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
Hattori et al., 2014 - Google Patents
[go: Go Back, main page]

Hattori et al., 2014 - Google Patents

Systematic study of surface magnetism in Si (111)–Fe system grown by solid phase epitaxy: In situ schematic magnetic phase diagram of Si (111)–Fe

Hattori et al., 2014

Document ID
8102655280142763627
Author
Hattori A
Hattori K
Kataoka K
Takematsu E
Ishii A
Komori F
Daimon H
Publication year
Publication venue
Journal of magnetism and magnetic materials

External Links

Snippet

We have studied in situ structures and magnetic properties for several iron silicides grown on Si (111) 7× 7 clean surfaces by the solid phase epitaxy (SPE) method: deposition of Fe at 40 K and subsequently annealing, and summarized almost all silicide phases depending on …
Continue reading at www.sciencedirect.com (other versions)

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20Ferrites
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/10Selection of materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0072Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
    • H01F1/0081Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures in a non-magnetic matrix, e.g. Fe-nanowires in a nanoporous membrane
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L43/00Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L43/12Processes or apparatus peculiar to the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer

Similar Documents

Publication Publication Date Title
Olive-Mendez et al. Epitaxial growth of Mn5Ge3/Ge (111) heterostructures for spin injection
Porter et al. Scattering mechanisms in textured FeGe thin films: Magnetoresistance and the anomalous Hall effect
Yamamoto et al. Fabrication of fully epitaxial magnetic tunnel junctions using cobalt-based full-Heusler alloy thin film and their tunnel magnetoresistance characteristics
Fukuma et al. Ferromagnetic properties of IV–VI diluted magnetic semiconductor Ge 1− x Mn x Te films prepared by radio frequency sputtering
Sinha et al. Strain-induced effects on the magnetic and electronic properties of epitaxial Fe 1− x Co x Si thin films
Chen et al. Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces
KR20220069863A (en) IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI-FERROMAGNETS(SAF) WITH HEUSLER COMPOUNDS
Chen et al. Use of half metallic Heusler alloys in CoFeB/MgO/Heusler alloy tunnel junctions
Lakshmanan et al. Variable substrate temperature deposition of CoFeB film on Ta for manipulating the perpendicular coercive forces
Gutiérrez-Pérez et al. Tailoring magnetization and anisotropy of tetragonal Mn3Ga thin films by strain-induced growth and spin orbit coupling
Yang et al. Anomalous thickness-dependent strain states and strain-tunable magnetization in Zn-doped ferrite epitaxial films
Hattori et al. Systematic study of surface magnetism in Si (111)–Fe system grown by solid phase epitaxy: In situ schematic magnetic phase diagram of Si (111)–Fe
Joe et al. Iron-based ferromagnetic van der Waals materials
Kaveev et al. Crystalline structure and magnetic properties of structurally ordered cobalt–iron alloys grown on Bi-containing topological insulators and systems with giant Rashba splitting
Wang et al. Edge dislocation with [001] b→ induced positive magnetoresistance in BaTiO3/La0. 66Sr0. 33MnO3 heterostructure
Bi et al. Observation of strong magnetic anisotropy in zinc-blende CrTe thin films
Xiao et al. Tailoring the interfacial exchange coupling of perpendicularly magnetized Co/L 10-Mn1. 5Ga bilayers
Arins et al. Correlation between tetragonal zinc-blende structure and magnetocrystalline anisotropy of MnGa epilayers on GaAs (111)
Prieto et al. Nanocrystalline magnetite thin films grown by dual ion-beam sputtering
Huang et al. Exchange coupling at the interface of antiferromagnet and rare-earth bilayers
Xiang et al. Boosting ferromagnetism in freestanding electronically phase separated manganite thin films
Martı́nez Boubeta et al. Magnetic coupling in epitaxial TM/MgO/Fe (001)(TM= FeCo, Fe/Co, Fe) macroscopic and microscopic trilayers
Bobo et al. Exchange anisotropy in epitaxial NiO (0 0 1)–FCC Co bilayers
Chen et al. Structure related magnetic dead layer for ultrathin Fe/Ir (111) films
Zhang et al. Structure and magnetic properties of CrN thin films on La0. 67Sr0. 33MnO3