laminar separationとは 意味・読み方・使い方

To provide a laminar flow separation prevention device which has less drop of performance at a low altitude where there is no possibility of laminar flow separation and prevents or delays the laminar flow separation at a high altitude where there is the possibility of the laminar flow separation.例文帳に追加

層流剥離の心配のない低高度では性能低下が小さく、かつ層流剥離のおそれのある高高度では層流剥離を防止または遅延できる層流剥離防止装置を提供する。 - 特許庁

MULTIPLE LAMINAR FLOW-BASED PARTICLE AND CELLULAR SEPARATION WITH LASER STEERING例文帳に追加

レーザ操縦を用いた多層流に基づく粒子及び細胞の分離 - 特許庁

The phase separation area is provided with the laminar structure having period refractive index changes.例文帳に追加

相分離領域は、周期的な屈折率変化を有する層状構造を備えている。 - 特許庁

In the low altitude where there is no possibility of the laminar flow separation, the positions of the wire materials forming the net plates are overlapped with a same phase and, in the high altitude where there is the possibility of the laminar flow separation, the positions of the wire materials forming the net plates are shifted in circumferential direction.例文帳に追加

層流剥離の心配がない低高度では、各網板を構成する線材の位置を同位相に重ね合わせ、層流剥離が起きる可能性の高い高高度では、網板を構成する線材の位置を周方向にずらす。 - 特許庁

Next, the contact of the laminar double hydroxide with hydrogen carbonate ion (HCO_3^-)-containing water produces an ion exchange between the phosphoric ion caught by the laminar double hydroxide and the hydrogen carbonate ions in water to aim at the separation of phosphorous ions and the recycle of the laminar double hydroxide as dephosphorizing agent.例文帳に追加

次に、その層状複水酸化物を炭酸水素イオン（ＨＣＯ_3^-）含有水に接触させて、層状複水酸化物が捕捉したリン酸イオンと水中の炭酸水素イオンとの間でイオン交換を生じさせ、リン酸イオンの離脱と層状複水酸化物の脱リン剤としての再生とを図る。 - 特許庁

This laminar flow separation prevention device comprises a plurality of turbulence adding plates 12 installed on the upstream side of a fan or a compressor to add turbulence to air flow flowing thereinto and a turbulence control device 14 controlling the degree of the entire turbulence by adjusting the phase of the turbulence adding plates.例文帳に追加

ファンまたは圧縮機の上流側に設けられ流入する気流に乱れを付加する複数の乱れ付加板１２と、乱れ付加板の位相を調整し全体の乱れ度を制御する乱れ度制御装置１４とを備える。 - 特許庁

A separation distance between the gas distribution plate 13 and the annular holder 16 is set such that a film forming gas 21 which flows downward from the gas supply port 12 through the gas distribution plate 13 is in a laminar flow state on a surface of the semiconductor wafer W or a surface of the annular holder 16.例文帳に追加

ガス整流板１３と環状ホルダー１６の離間距離は、ガス供給口１２からガス整流板１３を通り流下する成膜用ガス２１が半導体ウェーハＷ面上あるいは環状ホルダー１６面上で整流状態になるように設定されている。 - 特許庁