CN113136148B - Wafer grinding adhesive tape base material and preparation method thereof - Google Patents
Wafer grinding adhesive tape base material and preparation method thereof Download PDFInfo
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- CN113136148B CN113136148B CN202110247959.5A CN202110247959A CN113136148B CN 113136148 B CN113136148 B CN 113136148B CN 202110247959 A CN202110247959 A CN 202110247959A CN 113136148 B CN113136148 B CN 113136148B
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/29—Laminated material
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
- C08L23/0807—Copolymers of ethene with unsaturated hydrocarbons only containing four or more carbon atoms
- C08L23/0815—Copolymers of ethene with unsaturated hydrocarbons only containing four or more carbon atoms with aliphatic 1-olefins containing one carbon-to-carbon double bond
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
- C08L23/04—Homopolymers or copolymers of ethene
- C08L23/08—Copolymers of ethene
- C08L23/0846—Copolymers of ethene with unsaturated hydrocarbons containing atoms other than carbon or hydrogen
- C08L23/0853—Ethylene vinyl acetate copolymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2207/00—Properties characterising the ingredient of the composition
- C08L2207/06—Properties of polyethylene
- C08L2207/066—LDPE (radical process)
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/04—Presence of homo or copolymers of ethene
- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a wafer grinding tape base material and a preparation method thereof, wherein the base material comprises a base material inner layer and a base material outer layer, and the base material outer layer comprises the following raw materials in parts by mass: 10-35 parts of low-density polyethylene, 25-60 parts of metallocene linear low-density polyethylene and 10-30 parts of modified inorganic filler, wherein the modified inorganic filler is obtained by performing surface activity modification on fumed silica by using a coupling agent; the base material inner layer comprises the following raw materials in parts by mass: 50-75 parts of ethylene-vinyl acetate copolymer with the vinyl acetate content of 5-20 wt% and 10-35 parts of metallocene linear low-density polyethylene. The base material adopts a double-layer casting structure, the outer layer of the base material is added with modified inorganic filler to increase the rigidity of the outer layer of the base material, the inner layer of the base material adopts an ethylene-vinyl acetate copolymer structural formula to play a role in shock resistance and energy absorption, and meanwhile, the ethylene-vinyl acetate copolymer can be well bonded with the adhesive without a base coat when being coated with the adhesive.
Description
Technical Field
The invention relates to the technical field of grinding adhesive tapes, in particular to a wafer grinding adhesive tape base material and a preparation method thereof.
Background
With the development of technology, in the field of manufacturing semiconductor devices, the size of semiconductor devices is continuously reduced, and the size of electronic chips is also continuously reduced. Therefore, in the manufacturing process of the semiconductor device, after a plurality of semiconductor devices are formed on the functional surface of the wafer, a Back Grinding (BG) process is performed, and the wafer with a part of thickness removed from the Back surface corresponding to the functional surface is ground by a planarization process, so as to reduce the thickness of a chip formed subsequently. In the process of grinding the back surface of the wafer, a layer of protective tape (BG tape) is covered on the functional surface of the wafer to protect the wafer from being polluted by impurities or water in the grinding process, so as to ensure the quality of the chip.
Since the conventional wafer is provided with the grinding protective adhesive tape, the three-layer (even four-layer) structure of the substrate, the intermediate layer, the filling layer (which is used for coating the protruding part of the functional region of the wafer) and the bonding layer is adopted, and the coating process is carried out for three times or more, so that a plurality of complex factors are brought to quality control of the wafer grinding adhesive tape, and the wafer grinding adhesive tape is high in production cost and long in production period.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a wafer grinding tape base material.
In order to achieve the purpose, the invention adopts the technical scheme that: a wafer polishing tape substrate comprising an inner substrate layer and an outer substrate layer, wherein,
the outer layer of the base material comprises the following raw materials in parts by mass: 10-35 parts of low-density polyethylene, 25-60 parts of metallocene linear low-density polyethylene and 10-30 parts of modified inorganic filler, wherein the modified inorganic filler is obtained by performing surface activity modification on fumed silica by using a coupling agent;
the base material inner layer comprises the following raw materials in parts by weight: 50-75 parts of ethylene-vinyl acetate copolymer with the vinyl acetate content of 5-20 wt% and 10-35 parts of metallocene linear low-density polyethylene.
As a specific embodiment, the thickness of the outer layer of the substrate is controlled to be 15-50um; the thickness of the inner layer of the base material is controlled to be 65-100um.
As a specific embodiment, the modified inorganic filler is obtained by performing surface activity modification on fumed silica by adopting a titanate coupling agent.
As a specific embodiment, the modified inorganic filler is added in an amount of 15 to 20 parts.
Another object of the present invention is to provide a method for preparing the wafer polishing tape base material, comprising the following steps:
the method comprises the following steps of weighing raw materials required by the outer layer and the inner layer of the base material according to the mass parts, respectively adding the raw materials into a hopper of an extruder A and a hopper of an extruder B, respectively mixing the raw materials to form melts, then extruding the melts of the outer layer and the inner layer of the base material to a cooling roller through a curtain coating method through a coat hanger type co-extrusion die head for cooling and forming, and then rolling the melts to form a raw film of the coiled base material through a rolling mechanism after embossing of a rear steel roller and corona.
After the mass melt is cooled and shaped by the quenching roller, the temperature is raised again, embossing treatment is carried out through the precision steel roller, namely, the post-embossing process, on one hand, the fog face lines on the non-glue face of the film are given, exhaust among the laminated layers of the rolled film is facilitated, the rolling quality is guaranteed, on the other hand, the tempering treatment is carried out while embossing, the stress inside the film is eliminated, and the size stability of the base material is better during subsequent gluing. The process has the advantages of simple steps, convenient implementation, short production period and low cost.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages: the wafer grinding tape base material adopts a double-layer casting structure, the outer layer of the base material is contacted with a grinding disc, so that the rigidity of the outer layer of the base material is increased by adding modified inorganic filler into metallocene linear low-density polyethylene and low-density polyethylene, the inner layer of the base material is bonded with a subsequent adhesive layer, an ethylene-vinyl acetate copolymer structural formula is adopted to play a role in shock resistance and energy absorption, and meanwhile, the ethylene-vinyl acetate copolymer can be well bonded with an adhesive without a primer when being coated with the adhesive.
Detailed Description
The technical solution of the present invention is further illustrated below with reference to specific examples.
Example 1
Influence of modified inorganic fillers with different mass parts on adhesive tape performance
In this embodiment, a wafer polishing tape substrate is provided, which comprises an inner substrate layer and an outer substrate layer, wherein,
the outer layer of the base material comprises the following raw materials in parts by mass: 25 parts of low-density polyethylene (adopting poplarbasf low-density polyethylene 2420H), 60 parts of metallocene linear low-density polyethylene (adopting Exxon chemical metallocene linear low-density polyethylene 2018 EB) and modified inorganic filler, wherein the addition amounts of the modified inorganic filler are respectively 8 parts, 10 parts, 15 parts, 20 parts, 30 parts and 35 parts, and the modified inorganic filler is obtained by performing surface activity modification on fumed silica by titanate coupling agent;
the base material inner layer comprises the following raw materials in parts by mass: 75 parts of ethylene-vinyl acetate copolymer (containing 18wt% of vinyl acetate) (prepared from the Korea ethylene-vinyl acetate copolymer 1826) and 25 parts of metallocene linear low-density polyethylene (prepared from Exxon chemical metallocene linear low-density polyethylene 2018 EB).
The embodiment also provides a preparation method of the wafer grinding adhesive tape, which comprises the following steps:
1) Preparing a base material, respectively weighing raw materials required by an outer layer and an inner layer of the base material according to the mass parts, respectively adding the raw materials into a hopper of an extruder A and a hopper of an extruder B, respectively mixing to form a melt, wherein the temperatures of 1-3 areas of the extruder are respectively set to be 195 ℃,210 ℃ and 220 ℃, and the temperatures of other areas and a die head are set to be 240 ℃; then, adopting a tape casting method to perform tape casting extrusion on the melt of the outer layer of the base material and the melt of the inner layer of the base material to a cooling roller through a coat-hanger type co-extrusion die head (the die head is purchased from a Koro die head in America), and performing cooling molding, wherein the thicknesses of the outer layer of the base material and the inner layer of the base material are respectively 35 micrometers and 80 micrometers; then rolling the raw film into a roll-shaped base material film by a rolling mechanism after embossing by a rear steel roller and corona;
2) Coating a filling bonding layer with the thickness of 30-60 microns on the other side of the inner layer of the base material, which is far away from the outer layer of the base material, on the base material original film through a coating process, and using a single-sided release PET film with the thickness of 0.05mm as transfer coating, wherein the equipment is a Taicang wide-containing high-precision coating machine, and the thickness of coating dry glue is 35 microns, so that the protective adhesive tape for grinding is obtained.
The protective tapes for grinding prepared from the above formulations were subjected to performance tests, and the test data are shown in table 1.
The test method is as follows:
1. indentation hardness: test with reference to (GB/T10807-2006)
2. Compressive strength: the test was carried out with reference to (GB/T8813)
3. And (3) testing the water resistance: soaking the adhesive tape in normal temperature water, taking out the adhesive tape at different time, scraping the adhesive layer with certain pressure, and observing whether the adhesive layer falls off from the filling layer;
4. crack evaluation method:
1) In a 12-inch Si mirror wafer (thickness: 775 μm) was attached to the back surface of the substrate,
2) Cutting from the surface of the back-grinding tape opposite to the adhesive surface to obtain 593 pieces of 10.5mm × 10.5 mm;
3) Performing back grinding with the thickness of the mirror wafer being 25 μm;
4) Mounting the mirror-finished wafer on a dicing tape a6038C (westerda semiconductor technology (zhangjia) limited) and a ring frame by parallel transfer (inline transport);
5) Then, the mirror surface wafer surface was observed with an optical microscope (x 200) through a dicing tape to confirm the presence or absence of crack generation, and crack evaluation was performed based on the ratio of the number of crack generation (the number of small pieces in which cracks were generated) to the total number of small pieces (593).
TABLE 1
| Content of modified inorganic filler | 8 portions of | 10 portions of | 15 portions of | 20 portions of | 30 portions of | 35 portions of |
| Light transmittance: is based on | 75 | 70 | 68 | 65 | 60 | 45 |
| Water resistance | More than 10 days | More than 10 days | More than 10 days | More than 10 days | More than 10 days | More than 10 days |
| Hardness at indentation | ±9 | ±9.5 | ±11 | ±15 | ±15 | ±15 |
| Compressive strength: MPa of | 50 | 55 | 58 | 60 | 62 | 63 |
| Crack(s) | 5.5％ | 4.8％ | 4.5％ | 3.5％ | 3.2％ | 3.1％ |
As can be seen from Table 1, the modified inorganic filler is added, so that the adhesive tape has good water resistance; meanwhile, under the condition that other components are the same, with the increase of the addition amount of the modified inorganic filler material, the proportion of cracks on the wafer is reduced on the one hand, the compressive strength is improved on the other hand, the light transmittance is reduced on the other hand, the subsequent processes are influenced, and the preferable range is 15-20 parts.
Example 2
Influence of VA content of ethylene-vinyl acetate copolymer in inner layer of base material on performance of adhesive tape
In this embodiment, a wafer polishing tape substrate is provided, which comprises an inner substrate layer and an outer substrate layer, wherein,
the outer layer of the base material comprises the following raw materials in parts by mass: 25 parts of low-density polyethylene (adopting Yanzibasf low-density polyethylene 2420H), 60 parts of metallocene linear low-density polyethylene (adopting Exxon chemical metallocene linear low-density polyethylene 2018 EB) and 15 parts of modified inorganic filler;
the base material inner layer comprises the following raw materials in parts by mass: 75 parts of ethylene-vinyl acetate copolymer and 25 parts of metallocene linear low-density polyethylene (adopting Exxon chemical metallocene linear low-density polyethylene 2018 EB), wherein the VA content in the ethylene-vinyl acetate copolymer is respectively 3wt%, 5wt%, 10wt%, 18wt%, 20wt% and 22wt%.
The preparation method and the test method of the adhesive tape are the same as those of example 1, and the test results are shown in Table 2.
TABLE 2
From table 2, it can be seen that, under the same conditions of other components, with the increase of VA content in the ethylene-vinyl acetate copolymer, the transmittance and water resistance of the adhesive tape are both improved, meanwhile, the percentage of wafer cracks is reduced, the compressive strength and indentation hardness are also reduced, and the VA content in the ethylene-vinyl acetate copolymer is optimally selected to be 18wt% in combination of various properties.
Example 3
Influence of ethylene-vinyl acetate copolymer content in inner layer of base material on performance of adhesive tape
In this embodiment, a wafer polishing tape substrate is provided, which comprises an inner substrate layer and an outer substrate layer, wherein,
the outer layer of the base material comprises the following raw materials in parts by mass: 10 parts of low-density polyethylene (adopting Yanzibasf low-density polyethylene 2420H), 50 parts of metallocene linear low-density polyethylene (adopting Exxon chemical metallocene linear low-density polyethylene 2018 EB) and 10 parts of modified inorganic filler;
the base material inner layer comprises the following raw materials in parts by mass: 30 parts of metallocene linear low-density polyethylene (adopting Exxon chemical metallocene linear low-density polyethylene 2018 EB) and 45 parts, 50 parts, 60 parts, 70 parts, 75 parts and 80 parts of ethylene-vinyl acetate copolymer with 25 percent of VA content respectively.
The preparation method and the test method of the adhesive tape are the same as those of example 1, and the test results are shown in Table 3.
| Ethylene-vinyl acetate copolymer content | 45 portions of | 50 portions of | 60 portions of | 70 portions of | 75 portions of | 80 portions |
| Light transmittance: is based on | 66 | 68 | 68 | 70 | 75 | 75 |
| Water resistance | < 8 days | < 8 days | < 9 days | More than 10 days | < 10 days | < 9 days |
| Hardness at indentation | ±7.5 | ±8.2 | ±8.5 | ±9 | ±9 | ±9 |
| Compressive strength: MPa of | 65 | 60 | 58 | 50 | 50 | 50 |
| Crack(s) | 8.5％ | 7.0％ | 6.7％ | 6.5％ | 5.5％ | 6.0％ |
As can be seen from Table 3, in the case of the same other components, as the content of the ethylene-vinyl acetate copolymer in the inner layer of the substrate increases, the light transmittance and water resistance are improved, the indentation hardness is also improved, the wafer cracking rate is reduced, and the compressive strength is also reduced. The integral performance of the adhesive tape is integrated, and the content of the ethylene-vinyl acetate copolymer in the inner layer of the base material is controlled to be 70-75 parts.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (4)
1. A wafer polishing tape substrate, characterized in that the substrate comprises a substrate inner layer and a substrate outer layer, wherein,
the outer layer of the base material comprises the following raw materials in parts by mass: 10-35 parts of low-density polyethylene, 25-60 parts of metallocene linear low-density polyethylene and 10-30 parts of modified inorganic filler, wherein the modified inorganic filler is obtained by performing surface activity modification on fumed silica by using a coupling agent;
the base material inner layer comprises the following raw materials in parts by weight: 50-75 parts of ethylene-vinyl acetate copolymer with the vinyl acetate content of 5-20 wt%, 10-35 parts of metallocene linear low-density polyethylene,
the preparation process of the substrate comprises the following steps:
the method comprises the following steps of weighing raw materials required by the outer layer and the inner layer of the base material according to the mass parts, adding the raw materials into a hopper of an extruder A and a hopper of an extruder B respectively, mixing the raw materials to form melts, extruding the melts of the outer layer and the inner layer of the base material to a cooling roller through a coat-hanger type co-extrusion die head by a curtain coating method, cooling and forming the melts, embossing by a rear steel roller, and winding the melts by a winding mechanism to form a raw film of the rolled base material.
2. The wafer polishing tape substrate according to claim 1, wherein the thickness of the outer layer of the substrate is controlled to be 15 to 50 μm; the thickness of the inner layer of the base material is controlled to be 65-100 μm.
3. The wafer polishing tape substrate according to claim 1, wherein the modified inorganic filler is obtained by surface-active modification of fumed silica with a titanate-based coupling agent.
4. The wafer polishing tape substrate according to claim 1, wherein the modified inorganic filler is added in an amount of 15 to 20 parts.
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| US3754063A (en) * | 1970-03-23 | 1973-08-21 | Grace W R & Co | Method for casting an inflated tubular polyethylene film with mixed polymer of polypropylene-polybutene-1 |
| JP5367903B2 (en) * | 2012-03-19 | 2013-12-11 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer surface protection |
| CN103832032B (en) * | 2012-11-23 | 2016-02-17 | 曹修苗 | The manufacture method of three-layer co-extruded EVA compound casting films |
| CN104212376A (en) * | 2014-08-25 | 2014-12-17 | 安徽嘉木橡塑工业有限公司 | Pre-coated base film |
| CN109825215A (en) * | 2017-11-23 | 2019-05-31 | 上海海优威新材料股份有限公司 | Multilayer complex films and preparation method thereof for grinding wafer |
| CN111925739B (en) * | 2020-08-20 | 2021-03-19 | 太仓迪科力科技有限公司 | Protective adhesive tape for wafer grinding and preparation method thereof |
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Effective date of registration: 20230731 Address after: Factory Building No. 10, No. 93 Chengang Road, Houcheng Street, Zhangjiagang City, Suzhou City, Jiangsu Province, 215600 Patentee after: Qianhui semiconductor technology (Suzhou) Co.,Ltd. Address before: 201600 b8229, 2nd floor, building 3, No.1, Lane 599, Zhongmin Road, Maogang Town, Songjiang District, Shanghai Patentee before: Tongwa chemical (Shanghai) Co.,Ltd. |