ES2815249B2 - POLYHETEROAROMATIC COMPOUNDS AND THEIR USE FOR CHARGE TRANSPORTATION IN ELECTRONIC DEVICES - Google Patents
POLYHETEROAROMATIC COMPOUNDS AND THEIR USE FOR CHARGE TRANSPORTATION IN ELECTRONIC DEVICES Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims description 49
- 125000003118 aryl group Chemical group 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 125000001072 heteroaryl group Chemical group 0.000 claims description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 10
- -1 polyaromatic Chemical group 0.000 claims description 10
- 125000004429 atom Chemical group 0.000 claims description 9
- 125000003545 alkoxy group Chemical group 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052794 bromium Inorganic materials 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- MVXVYAKCVDQRLW-UHFFFAOYSA-N 1h-pyrrolo[2,3-b]pyridine Chemical compound C1=CN=C2NC=CC2=C1 MVXVYAKCVDQRLW-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 4
- JBWYHEWFOLZDIH-UHFFFAOYSA-N 1,9-dihydropyrene Chemical compound C1=CC=C2CC=C3CC=CC4=CC=C1C2=C43 JBWYHEWFOLZDIH-UHFFFAOYSA-N 0.000 claims description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 claims description 2
- 125000005577 anthracene group Chemical group 0.000 claims description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N antipyrene Natural products C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 claims description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 2
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 125000005581 pyrene group Chemical group 0.000 claims description 2
- 239000010408 film Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- SUBDBMMJDZJVOS-UHFFFAOYSA-N 5-methoxy-2-{[(4-methoxy-3,5-dimethylpyridin-2-yl)methyl]sulfinyl}-1H-benzimidazole Chemical compound N=1C2=CC(OC)=CC=C2NC=1S(=O)CC1=NC=C(C)C(OC)=C1C SUBDBMMJDZJVOS-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- MAKFMOSBBNKPMS-UHFFFAOYSA-N 2,3-dichloropyridine Chemical compound ClC1=CC=CN=C1Cl MAKFMOSBBNKPMS-UHFFFAOYSA-N 0.000 description 1
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical class [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- HRDWUZRHCJPOFA-UHFFFAOYSA-N anthracene-1,5-diamine Chemical compound C1=CC=C2C=C3C(N)=CC=CC3=CC2=C1N HRDWUZRHCJPOFA-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- MUALRAIOVNYAIW-UHFFFAOYSA-N binap Chemical compound C1=CC=CC=C1P(C=1C(=C2C=CC=CC2=CC=1)C=1C2=CC=CC=C2C=CC=1P(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MUALRAIOVNYAIW-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
- C07D471/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed systems contains four or more hetero rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Thin Film Transistor (AREA)
Description
DESCRIPCI NDESCRIPTION
COMPUESTOS POLIHETEROAROMÁTICOS Y SU USO PARA EL TRANSPORTE DE CARGA EN DISPOSITIVOS ELECTRÓNICOSPOLYHETEROAROMATIC COMPOUNDS AND THEIR USE FOR CHARGE TRANSPORTATION IN ELECTRONIC DEVICES
Campo de la invenciónfield of invention
La presente invención se encuadra en el campo general de la química orgánica, y en el campo de la electrónica orgánica en particular, y en concreto, se refiere a compuestos de naturaleza poliheteroaromática y al uso de los mismos en la fabricación de dispositivos electrónicos tales como transistores, dispositivos emisores de luz, células solares, condensadores, supercondensadores, fotodetectores, láseres o sensores, entre otros.The present invention falls within the general field of organic chemistry, and in the field of organic electronics in particular, and specifically, refers to compounds of a polyheteroaromatic nature and their use in the manufacture of electronic devices such as transistors, light-emitting devices, solar cells, capacitors, supercapacitors, photodetectors, lasers or sensors, among others.
Antecedentes de la invenciónBackground of the invention
Los dispositivos optoelectrónicos están constituidos por una combinación de varios materiales, generalmente dispuestos como una secuencia de películas finas, desempeñando cada película una función que permita el correcto funcionamiento del dispositivo.Optoelectronic devices are made up of a combination of various materials, generally arranged as a sequence of thin films, each film performing a function that allows the correct operation of the device.
El funcionamiento de todo dispositivo electrónico conlleva la circulación de una corriente eléctrica, es decir, un transporte de carga eléctrica a través de los diferentes materiales que constituyen el dispositivo.The operation of any electronic device involves the circulation of an electric current, that is, a transport of electric charge through the different materials that make up the device.
Para el correcto transporte de carga en el interior de un dispositivo se recurre al uso de materiales que selectivamente transportan un tipo de portador (electrón o hueco).For the correct transport of charge inside a device, the use of materials that selectively transport a type of carrier (electron or hole) is used.
Algunos materiales orgánicos poseen propiedades semiconductoras propiciadas por la estructura de los mismos. En lo referente a la estructura molecular de los semiconductores orgánicos, estos se caracterizan por la existencia de conjugación en parte, o toda su estructura.Some organic materials have semiconducting properties propitiated by their structure. Regarding the molecular structure of organic semiconductors, these are characterized by the existence of conjugation in part, or all of their structure.
No obstante, el transporte de carga eléctrica a través de materiales de naturaleza orgánica se ve dificultado en gran medida por el desorden inherente a las moléculas orgánicas.However, the transport of electrical charge through materials of an organic nature is greatly hindered by the disorder inherent in organic molecules.
La modificación en la estructura molecular de un material orgánico repercute sobre su modo de empaquetamiento y/o la morfología de la película en la que esté integrado dentro del dispositivo electrónico. A su vez, el modo de empaquetamiento y/o morfología de la película influyen sobre la calidad del transporte de carga.The modification in the molecular structure of an organic material affects its packaging mode and/or the morphology of the film in which it is integrated within the electronic device. In turn, the mode of packing and/or film morphology influence the quality of charge transport.
Un material transportador de carga debe poseer una estructura electrónica bien alineada con la de los materiales adyacentes para favorecer la migración del portador de carga deseado. A charge-carrying material must have an electronic structure that is well aligned with that of adjacent materials to promote migration of the desired charge carrier.
Los materiales transportadores de carga deben poseer una movilidad de carga acorde con los requisitos necesarios para la aplicación del dispositivo optoelectrónico.The charge-carrying materials must have a charge mobility in accordance with the necessary requirements for the application of the optoelectronic device.
En el caso de dispositivos en los que intervenga la absorción o emisión de luz, los materiales transportadores de carga, preferiblemente, deben ser transparentes a la radiación que sea preciso absorber o emitir para no interferir con el correcto funcionamiento del dispositivo. In the case of devices involving the absorption or emission of light, the charge-carrying materials should preferably be transparent to the radiation that needs to be absorbed or emitted so as not to interfere with the correct operation of the device.
Además, la estabilidad de los materiales orgánicos es otra de las facetas a considerar, ya que condiciona la degradación de los dispositivos electrónicos y el tiempo de vida útil de los mismos.In addition, the stability of organic materials is another aspect to consider, since it conditions the degradation of electronic devices and their useful life.
Atendiendo a todos los motivos indicados, la investigación acerca de compuestos conjugados que permitan un funcionamiento óptimo de los dispositivos optoelectrónicos en su versión orgánica, representa un desafío para el estado actual del área de la electrónica orgánica (Adv. Mater. 2018, 30, 1800455; Adv. Energy Mater. 2018, 8, 1702730; J. Mater. Chem. C 2018, 6, 8280; J. Mater. Chem. C 2017, 5, 8654; J. Amer. Chem. Soc. 2013, 135, 6724; Adv. Mater.In response to all the reasons indicated, research on conjugated compounds that allow optimal operation of optoelectronic devices in their organic version represents a challenge for the current state of the area of organic electronics (Adv. Mater. 2018, 30, 1800455 Adv Energy Mater 2018, 8, 1702730 J Mater Chem C 2018 6 8280 J Mater Chem C 2017 5 8654 J Amer Chem Soc 2013 135 6724; Adv Mater.
2013, 25, 6158; Chem. Rev. 2011, 112, 2208). Sin embargo, todavía no se dispone de los materiales idóneos para impulsar el desarrollo de esta tecnología hacia la fase industrial, siendo precisa la investigación que lleve al descubrimiento de nuevos materiales.2013, 25, 6158; Chem Rev 2011, 112, 2208). However, the ideal materials are not yet available to promote the development of this technology towards the industrial phase, and research that leads to the discovery of new materials is required.
Existe pues la necesidad de proporcionar compuestos que solucionen los problemas anteriormente descritos de tal forma que permitan un mejor funcionamiento de los dispositivos optoelectrónicos en los que se encuentranThere is therefore a need to provide compounds that solve the problems described above in such a way that they allow a better operation of the optoelectronic devices in which they are found.
Descripción de la invenciónDescription of the invention
La presente invención soluciona los problemas citados en el estado de la técnica ya que, proporciona unos compuestos que permiten el control sobre la orientación de unas moléculas respecto a otras favoreciendo de tal forma el ordenamiento en estado sólido, además los compuestos de la presente invención pueden ser utilizados en el transporte de huecos en dispositivos optoelectrónicos mejorando las prestaciones de los mismos, y en capas transportadoras de carga en dispositivos electrónicos.The present invention solves the problems cited in the state of the art since it provides compounds that allow control over the orientation of some molecules with respect to others, thus favoring ordering in the solid state, in addition, the compounds of the present invention can be used in the transport of holes in optoelectronic devices, improving their performance, and in charge-carrying layers in electronic devices.
Así pues, en un primer aspecto, la presente invención se refiere a un compuesto poliheteroaromático de fórmula general (I) (de aquí en adelante compuesto de la presente invención) y sus formas isómeras. Thus, in a first aspect, the present invention relates to a polyheteroaromatic compound of general formula (I) (hereinafter compound of the present invention) and its isomeric forms.
Fórmula general (I)General formula (I)
dondewhere
Ari es seleccionado de entre una estructura aromática, poliaromática, heteroaromática, poliheteroaromática o una combinación de las mismas, donde dicha estructura tiene anillos de 5-60 átomos y donde dichos anillos, son seleccionados de anillos individuales, fusionados y enlazados,Ari is selected from an aromatic, polyaromatic, heteroaromatic, polyheteroaromatic structure or a combination thereof, where said structure has rings of 5-60 atoms and where said rings are selected from individual, fused and linked rings,
n es un número entero entre 1-2,n is an integer between 1-2,
R1, R2, R3, R4, R5, R6 son iguales o diferentes seleccionados de entre átomos de hidrógeno, flúor, cloro, bromo, yodo, grupos alquilo (C3-C20) lineares o ramificados, grupos alcoxi (C3-C20) lineares o ramificados, estructura aromática, poliaromática, heteroaromática o poliheteroaromatica, donde dicha estructura tiene anillos de 5-60 átomos y donde dichos anillos, son seleccionados de anillos individuales, fusionados y enlazados,R1, R2, R3, R4, R5, R6 are the same or different selected from hydrogen, fluorine, chlorine, bromine, iodine atoms, linear or branched (C3-C20) alkyl groups, linear or branched (C3-C20) alkoxy groups. branched, aromatic, polyaromatic, heteroaromatic or polyheteroaromatic structure, where said structure has rings of 5-60 atoms and where said rings are selected from individual, fused and linked rings,
donde R1 y R2 y/o R2 y R3 y/o R4 y R5 y/o R5 y R6, pueden estar o no directamente enlazados entre sí, dando lugar a un anillo aromático o heteroaromático sustituido o no sustituido y pueden o no fusionarse a otros anillos,where R1 and R2 and/or R2 and R3 and/or R4 and R5 and/or R5 and R6 may or may not be directly linked to each other, giving rise to a substituted or unsubstituted aromatic or heteroaromatic ring and may or may not be fused to other rings,
dónde se excluye el compuesto con formula general (I) donde R1= R2 = R3 = R4 =R5 = R6 =H, n=1 y Ar1 es benceno y sus formas isómeras ywhere the compound with general formula (I) is excluded where R1= R2 = R3 = R4 =R5 = R6 =H, n=1 and Ar1 is benzene and its isomeric forms and
donde se excluye el compuesto 1,9-dihidropireno[2,1-b:7,6-b’]di(7-azaindol).where the compound 1,9-dihydropyrene[2,1-b:7,6-b']di(7-azaindole) is excluded.
En la presente invención, por estructura aromática se refiere a un sustituyente o molécula cíclica, plana, con enlaces conjugados que cumple la regla de Hückle.In the present invention, aromatic structure refers to a planar, cyclic substituent or molecule with conjugated bonds that obeys Hückle's rule.
En la presente invención por estructura poliaromática se refiere a un sustituyente o molécula constituida por varias unidades aromáticas fusionadas o enlazadas.In the present invention, polyaromatic structure refers to a substituent or molecule made up of several fused or linked aromatic units.
En la presente invención por estructura heteroaromática se refiere a un sustituyente o molécula que cumple con las premisas descritas para la estructura aromática, pero dispone de heteroátomos integrados en el ciclo. In the present invention, heteroaromatic structure refers to a substituent or molecule that meets the premises described for the aromatic structure, but has heteroatoms integrated in the cycle.
En la presente invención por estructura poliheteroaromática se refiere a un sustituyente o molécula constituida por varias unidades heteroaromáticas fusionadas o enlazadas.In the present invention, polyheteroaromatic structure refers to a substituent or molecule made up of several fused or linked heteroaromatic units.
En la presente invención por anillos fusionados se refiere a que dos anillos comparten un enlace que forma parte de los respectivos ciclos simultáneamente. Las estructuras fusionadas no quedan restringidas a dos anillos, sino que pueden resultar de la fusión de varios anillos a través de diferentes enlaces.In the present invention, by fused rings it is meant that two rings share a bond that is part of the respective cycles simultaneously. Fused structures are not restricted to two rings, but can result from the fusion of several rings through different bonds.
En la presente invención por anillos enlazados se refiere a que dos o más anillos se encuentran unidos a través de enlaces sigma.In the present invention by linked rings it is meant that two or more rings are joined through sigma bonds.
En la presente invención por grupo alquilo se refiere a una estructura hidrocarbonada sin ningún tipo de insaturación.In the present invention, alkyl group refers to a hydrocarbon structure without any type of unsaturation.
En la presente invención por grupo alcoxi o alcoxilo se refiere a un átomo de oxígeno enlazado a un grupo alquilo.In the present invention, alkoxy or alkoxy group refers to an oxygen atom bonded to an alkyl group.
En la presente invención por cadenas lineales se refiere a estructuras de tipo alquilo o alcoxi que no incluyen ningún sustituyente.In the present invention, by linear chains it refers to structures of the alkyl or alkoxy type that do not include any substituents.
En la presente invención por cadenas ramificadas se refiere a estructuras de tipo alquilo o alcoxi que a su vez contienen otros sustituyentes.In the present invention, branched chains refer to structures of the alkyl or alkoxy type which in turn contain other substituents.
En la presente invención por formas isómeras se refieren a la isomería estructural, en particular, en la presente invención por formas isómeras estructurales, se refiere a aquellos compuestos que presentan la misma fórmula molecular, pero tienen una diferente distribución de los enlaces entre sus átomos.In the present invention, by isomeric forms, they refer to structural isomerism, in particular, in the present invention by structural isomeric forms, it refers to those compounds that have the same molecular formula, but have a different distribution of bonds between their atoms.
En una realización particular, el compuesto de fórmula general (I), es la forma isómera según la fórmula general (II).In a particular embodiment, the compound of general formula (I) is the isomeric form according to general formula (II).
dónde se excluyen los isómeros correspondientes al compuesto con formula general (I) donde R1= R2 = R3 = R4 =R5 = R6 =H, n=1 y Ar1 es benceno y sus formas isómeras.where the isomers corresponding to the compound with general formula (I) are excluded where R1= R2 = R3 = R4 =R5 = R6 =H, n=1 and Ar1 is benzene and its isomeric forms.
En una realización particular, la presente invención se refiere al compuesto de formula general (I) de la presente invención donde Ar1 es naftaleno, Ri= R2 = R3 = R4 = R5 = R6 =H y n=1.In a particular embodiment, the present invention refers to the compound with the general formula (I) of the present invention where Ar1 is naphthalene, Ri=R2=R3=R4=R5=R6=H and n=1.
En una realización particular, la presente invención se refiere al compuesto de formula general (I) de la presente invención donde Ar1 es antraceno, R1= R2 = R3 = R4 = R5 = R6 =H y n=1.In a particular embodiment, the present invention refers to the compound of general formula (I) of the present invention where Ar1 is anthracene, R1= R2 = R3 = R4 = R5 = R6 =H and n=1.
En una realización particular, la presente invención se refiere al compuesto de formula general (II) de la presente invención donde Ar1 es pireno, R1= R2 = R3 = R4 = R5 = R6 =H y n=1.In a particular embodiment, the present invention refers to the compound of general formula (II) of the present invention where Ar1 is pyrene, R1= R2 = R3 = R4 = R5 = R6 =H and n=1.
En una realización particular, la presente invención se refiere al compuesto de formula general (I) de la presente invención donde Ar1 es benceno, R1= R2 = R3 = R4 = R5 = R6 =H y n=2.In a particular embodiment, the present invention refers to the compound of general formula (I) of the present invention where Ar1 is benzene, R1= R2 = R3 = R4 = R5 = R6 =H and n=2.
En otro aspecto, la presente invención se refiere a un procedimiento para la preparación de los compuestos de la presente invención, a partir del compuesto intermedio de fórmula general (NOIn another aspect, the present invention relates to a process for the preparation of the compounds of the present invention, starting from the intermediate compound of general formula (NO
donde:where:
Ar1 es seleccionado de entre una estructura aromática, poliaromática, heteroaromática, poliheteroaromática o una combinación de las mismas, donde dicha estructura tiene anillos de 5-60 átomos y donde dichos anillos, son seleccionados de anillos individuales, fusionados y enlazados.Ar1 is selected from an aromatic, polyaromatic, heteroaromatic, polyheteroaromatic structure or a combination thereof, where said structure has rings of 5-60 atoms and where said rings are selected from individual, fused and linked rings.
n es un número entero entre 1-2,n is an integer between 1-2,
X es un átomo de halógeno seleccionado de entre cloro, bromo o yodo.X is a halogen atom selected from chlorine, bromine or iodine.
R1, R2, R3, R4, R5, R6 son iguales o diferentes seleccionados de entre átomos de hidrógeno, flúor, cloro, bromo, yodo, grupos alquilo (C3-C20) lineares o ramificados, grupos alcoxi (C3-C20) lineares o ramificados, estructura aromática, poliaromática, heteroaromática o poliheteroaromatica, donde dicha estructura tiene anillos de 5-60 átomos y donde dichos anillos, son seleccionados de anillos individuales, fusionados y enlazados,R1, R2, R3, R4, R5, R6 are the same or different selected from hydrogen, fluorine, chlorine, bromine, iodine atoms, linear or branched (C3-C20) alkyl groups, linear or branched (C3-C20) alkoxy groups. branched, aromatic, polyaromatic, heteroaromatic or polyheteroaromatic structure, where said structure has rings of 5-60 atoms and where said rings are selected from individual, fused and linked rings,
donde R1 y R2 y/o R2 y R3 y/o R4 y R5 y/o R5 y R6, pueden estar o no directamente enlazados entre sí, dando lugar a un anillo aromático o heteroaromático sustituido o no sustituido y pueden o no fusionarse a otros anillos.where R1 and R2 and/or R2 and R3 and/or R4 and R5 and/or R5 and R6 may or may not be directly linked to each other, giving rise to a substituted or unsubstituted aromatic or heteroaromatic ring and may or may not be fused to other rings.
En otro aspecto, la presente invención se refiere al uso del compuesto de la presente invención en la preparación de capas transportadoras de huecos en dispositivos optoelectrónicos.In another aspect, the present invention relates to the use of the compound of the present invention in the preparation of hole transporting layers in optoelectronic devices.
En otro aspecto, la presente invención se refiere al uso del compuesto de la presente invención en la preparación de capas transportadoras de carga en dispositivos electrónicos. In another aspect, the present invention relates to the use of the compound of the present invention in the preparation of charge transporting layers in electronic devices.
En otro aspecto, la presente invención se refiere a un dispositivo electrónico y/u optoelectrónico que comprende el compuesto de la presente invención.In another aspect, the present invention relates to an electronic device and/or optoelectronic compound comprising the compound of the present invention.
Descripción de las figurasDescription of the figures
La figura 1 muestra el esquema de la arquitectura de un transistor en el que se incluyen las siguientes capas:Figure 1 shows the schematic of a transistor architecture in which the following layers are included:
1: electrodo puerta1: gate electrode
2: dieléctrico2: dielectric
3: recubrimiento dieléctrico3: dielectric coating
4: semiconductor constituido por el compuesto de la presente invención.4: semiconductor constituted by the compound of the present invention.
5: capa de contacto5: contact layer
6: electrodo fuente6: source electrode
7: electrodo colector7: collector electrode
La figura 2 muestra el esquema de la arquitectura de una célula solar de arquitectura invertida, con las siguientes capas:Figure 2 shows the architecture scheme of an inverted architecture solar cell, with the following layers:
11: sustrato transparente11: transparent substrate
12: electrodo transparente (ánodo)12: transparent electrode (anode)
13: capa de contacto del ánodo13: anode contact layer
14: capa transportadora de huecos con el compuesto de la presente invención14: hole transporting layer with the compound of the present invention
15: capa activa15: active layer
16: capa transportadora de electrones16: electron transport layer
17: capa de contacto del cátodo17: cathode contact layer
18: electrodo metálico (cátodo)18: metal electrode (cathode)
La figura 3 muestra el esquema de la arquitectura de una célula solar de arquitectura convencional, con las siguientes capas:Figure 3 shows the architecture scheme of a conventional architecture solar cell, with the following layers:
11: sustrato transparente11: transparent substrate
22: electrodo transparente (cátodo)22: transparent electrode (cathode)
23: capa de contacto del cátodo 23: cathode contact layer
24: capa transportadora de electrones24: electron transport layer
15: capa activa15: active layer
26: capa transportadora de huecos con el compuesto de la presente invención26: hole transporting layer with the compound of the present invention
27: capa de contacto del ánodo27: anode contact layer
28: electrodo metálico (ánodo)28: metal electrode (anode)
Descripción detallada de la invenciónDetailed description of the invention
Ejemplo 1: Síntesis de N,N'-bis(3-cloropiridin-2-il)antraceno-1,5-diamina Example 1: Synthesis of N,N'-bis ( 3-chloropyridin-2-yl)anthracene-1,5-diamine
En un matraz de fondo redondo se preparó una mezcla que contenía (±)BINAP (0.19 g, 7.5 mol%) Pd(OAc)2 (0.046 g, 5 mol%) y 1,4-dioxano (35 mL), y se calentó a 80°C durante 15 minutos. En otro matraz de fondo redondo se preparó una mezcla que contenía 1,5-diaminoantraceno (0.85 g, 4.09 mmol), 2,3-dicloropiridina (1.39 g, 9.40 mmol), terc-butóxido de potasio (1.37 g, 12.3 mmol) y dioxano (40 mL). El contenido de la primera mezcla se añadió al matraz que contenía la segunda mezcla y la mezcla resultante se calentó a temperatura de reflujo durante 24 horas. Posteriormente se dejó enfriar la mezcla a temperatura ambiente y se evaporó el disolvente. El sólido obtenido se lavó con agua y con metanol para obtener el producto esperado N,N'-bis(3-cloropiridin-2-il)antraceno-1,5-diamina con un rendimiento del 68%.In a round-bottom flask, a mixture containing (±)BINAP (0.19 g, 7.5 mol%) Pd(OAc)2 (0.046 g, 5 mol%) and 1,4-dioxane (35 mL) was prepared, and heated at 80°C for 15 minutes. In another round bottom flask a mixture containing 1,5-diaminoanthracene (0.85 g, 4.09 mmol), 2,3-dichloropyridine (1.39 g, 9.40 mmol), potassium tert-butoxide (1.37 g, 12.3 mmol) was prepared. and dioxane (40 mL). The contents of the first mixture were added to the flask containing the second mixture and the resulting mixture was heated at reflux temperature for 24 hours. Subsequently, the mixture was allowed to cool to room temperature and the solvent was evaporated. The solid obtained was washed with water and with methanol to obtain the expected product N,N'-bis ( 3-chloropyridin-2-yl)anthracene-1,5-diamine with a yield of 68%.
Ejemplo 2: Síntesis de antra[1,2-b:5,6-b]di-7-azaindol.Example 2: Synthesis of antra[1,2-b:5,6-b]di-7-azaindole.
En un reactor fotoquímico se preparó una mezcla del compuesto obtenido en el ejemplo 1 (0.90 g, 2.09 mmol), terc-butóxido de potasio (0.93 g, 8.35 mmol) y dimetilsulfóxido (160 ml), que fue irradiado con una lámpara de mercurio de presión media durante 2.5 horas. Después se dejó enfriar la mezcla hasta temperatura ambiente, se vertió sobre una disolución saturada de cloruro de amonio que se encontraba a 0°C. El precipitado obtenido se filtró y se lavó con agua y metanol para obtener el producto antra[1,2-b:5,6-b]di-7-azaindol con un 96% de rendimiento.In a photochemical reactor, a mixture of the compound obtained in example 1 (0.90 g, 2.09 mmol), potassium tert-butoxide (0.93 g, 8.35 mmol) and dimethylsulfoxide (160 ml) was prepared, which was irradiated with a mercury lamp. medium pressure for 2.5 hours. After the mixture was allowed to cool to room temperature, it was poured onto a saturated ammonium chloride solution which was at 0°C. The precipitate obtained was filtered and washed with water and methanol to obtain the product antra[1,2-b:5,6-b]di-7-azaindole with 96% yield.
Ejemplo 3: uso del compuesto del ejemplo 2 para la fabricación y caracterización de células solares.Example 3: use of the compound of example 2 for the manufacture and characterization of solar cells.
Arquitectura invertida.inverted architecture.
Un sustrato consistente en vidrio cubierto por una película de ITO con la forma de un patrón predefinido, se enjuagó en un baño de ultrasonidos, secuencialmente, con acetona, agua e isopropanol (5 minutos cada paso) y posteriormente se sometió a un tratamiento de UV-ozono durante 30 minutos. Los sustratos se introdujeron en un equipo de sublimación integrado en una caja de atmósfera inerte para depositar una película del compuesto obtenido en el ejemplo 2, que actuó como capa transportadora de huecos. Posteriormente sobre esta película se depositó, mediante la técnica de spin-coating, otra película que actuó como capa activa y correspondía a un compuesto de tipo perovskita formado en una disolución de PbCh (0.2 M), Pb(CH3COO)2 (0.8 M), y CH3NH3I (3 M) en dimetilformamida. A continuación, el sustrato se coció a una temperatura de 100°C durante 10 minutos. Posteriormente, empleando la técnica de spin-coating, se depositó una película de PCBM ([6 ,6 ]-fenil-C61-butirato de metilo),en disolución de cloroformo y clorobenceno, que actuó como capa transportadora de electrones. El sustrato se volvió a introducir en el equipo de sublimación para depositar una película de fluoruro de litio y un electrodo de aluminio. La célula solar fabricada se caracterizó irradiándola con una lámpara que simula la luz solar y midiendo la variación de la intensidad de corriente resultante de aplicar un barrido de potencial (-0.2V a 1.1V).A substrate consisting of glass covered by an ITO film in the shape of a pattern predefined, it was rinsed in an ultrasonic bath, sequentially, with acetone, water and isopropanol (5 minutes each step) and subsequently subjected to a UV-ozone treatment for 30 minutes. The substrates were introduced in a sublimation equipment integrated in a box with an inert atmosphere to deposit a film of the compound obtained in Example 2, which acted as a transport layer for holes. Subsequently, another film was deposited on this film, using the spin-coating technique, which acted as an active layer and corresponded to a perovskite-type compound formed in a solution of PbCh (0.2 M), Pb(CH3COO)2 (0.8 M) , and CH3NH3I (3M) in dimethylformamide. The substrate was then baked at a temperature of 100°C for 10 minutes. Subsequently, using the spin-coating technique, a PCBM film ([6 ,6 ]-phenyl-C61-methyl butyrate) was deposited in chloroform and chlorobenzene solution, which acted as an electron transport layer. The substrate was put back into the sublimation equipment to deposit a lithium fluoride film and an aluminum electrode. The manufactured solar cell was characterized by irradiating it with a lamp that simulates sunlight and measuring the variation in current intensity resulting from applying a potential sweep (-0.2V to 1.1V).
Arquitectura convencional.conventional architecture.
Sobre un sustrato de ITO se depositó mediante spin-coating una película de óxido de estaño a partir de una disolución acuosa (15%). Seguidamente se depositó, empleando la misma técnica, una película de PCBM, que desempeñó la función de capa transportadora de electrones, a partir de una disolución en clorobenceno. A continuación, se depositó, usando spin-coating, la capa activa constituida por un compuesto de tipo perovskita. Posteriormente se añadió la película que actuó como capa transportadora de huecos. Para ello se recurre a la sublimación del compuesto obtenido en el ejemplo 2. El dispositivo se completó mediante la sublimación secuencial de una película de trióxido de molibdeno y un electrodo de oro. La célula solar se caracterizó de la misma manera que se ha descrito en el caso inmediatamente precedente.A tin oxide film from an aqueous solution (15%) was deposited on an ITO substrate by spin-coating. Next, using the same technique, a PCBM film was deposited, which served as the electron transport layer, from a solution in chlorobenzene. Next, the active layer consisting of a perovskite-type compound was deposited using spin-coating. Subsequently, the film that acted as a hole transporting layer was added. To do this, sublimation of the compound obtained in example 2 is used. The device was completed by sequential sublimation of a molybdenum trioxide film and a gold electrode. The solar cell was characterized in the same way as described in the immediately preceding case.
Ejemplo 4: uso del compuesto del ejemplo 2 para la fabricación y caracterización de transistores.Example 4: use of the compound of example 2 for the manufacture and characterization of transistors.
Un sustrato de silicio dopado y recubierto con una capa de óxido de silicio se enjuagó secuencialmente con agua, acetona e isopropanol (5 minutos cada paso). A continuación, se depositó una capa de poliestireno a partir de una disolución en tolueno, empleando la técnica de spin-coating. Posteriormente los sustratos se transfirieron a un equipo de evaporación integrado en una caja de atmósfera inerte y se depositó una capa del compuesto obtenido en el ejemplo 2. A continuación se sublimó una capa de trióxido de molibdeno, seguida de los electrodos fuente y colector de oro, empleando una máscara para definir el canal del transistor con una longitud de 40-140 ^m. El dispositivo se caracterizó midiendo las variaciones de intensidad de corriente en respuesta a un barrido de potenciales (0V a -80V).A doped silicon substrate coated with a layer of silicon oxide was sequentially rinsed with water, acetone and isopropanol (5 min each step). Next, a layer of polystyrene was deposited from a solution in toluene, using the spin-coating technique. Subsequently, the substrates were transferred to an evaporation unit integrated in an inert atmosphere box and a layer of the compound obtained in example 2 was deposited. Next, a layer of molybdenum trioxide was sublimated, followed by the gold source and collector electrodes. , using a mask to define the transistor channel with a length of 40-140 ^m. The device was characterized by measuring current intensity variations in response to a potential sweep (0V to -80V).
El diseño molecular con los compuestos de la presente invención permitió un control sobre la orientación de unas moléculas con respecto a otras, favoreciendo su ordenamiento en estado sólido.Molecular design with the compounds of the present invention allowed control over the orientation of some molecules with respect to others, favoring their arrangement in the solid state.
Las propiedades de los compuestos de la presente invención, fueron adecuadas para intervenir en el transporte de huecos en dispositivos optoelectrónicos y mejorar las prestaciones de los mismos.The properties of the compounds of the present invention were suitable to intervene in the transport of holes in optoelectronic devices and improve their performance.
Los compuestos de la presente invención pudieron ser depositados, en forma de película fina, tanto mediante técnicas de procesamiento en fase líquida, como técnicas de procesamiento en fase vapor.The compounds of the present invention could be deposited, in the form of a thin film, by both liquid phase processing techniques and vapor phase processing techniques.
La aplicación de este tipo de películas resulta apta para integrarlas como capas transportadoras de carga en la arquitectura de diversos tipos de dispositivos electrónicos (transistores, dispositivos emisores de luz, células solares, condensadores, supercondensadores, fotodetectores, láseres o sensores) y puede mejorar sus prestaciones. The application of this type of film is suitable for integration as charge-carrying layers in the architecture of various types of electronic devices (transistors, light-emitting devices, solar cells, capacitors, supercapacitors, photodetectors, lasers or sensors) and can improve their benefits.
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