JP2550160B2 - Method for producing ultrafine metal boride particles - Google Patents
Method for producing ultrafine metal boride particlesInfo
- Publication number
- JP2550160B2 JP2550160B2 JP63208388A JP20838888A JP2550160B2 JP 2550160 B2 JP2550160 B2 JP 2550160B2 JP 63208388 A JP63208388 A JP 63208388A JP 20838888 A JP20838888 A JP 20838888A JP 2550160 B2 JP2550160 B2 JP 2550160B2
- Authority
- JP
- Japan
- Prior art keywords
- metal boride
- raw material
- lab
- gas
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Conductive Materials (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、厚膜抵抗体の電気伝導組成物として用いら
れる金属ホウ化物の超微粒子を製造する方法に関する。TECHNICAL FIELD The present invention relates to a method for producing ultrafine particles of a metal boride used as an electrically conductive composition of a thick film resistor.
非酸化性ガス雰囲気で焼成可能な厚膜抵抗体の電気伝
導組成物として用いられる金属ホウ化物を微粉化する従
来の方法は、特公昭59−51721号公報に記載のように、
原料粉を機械的粉砕例えば振動ミル等により粉砕した
後、ふるい分けし、所望の粒子サイズを得ていた。しか
し機械的粉砕では、この粉砕で得られる粒子サイズに制
限があり、その最小粒子サイズは0.2μm程度であり、
またその形状も不揃いである。A conventional method for pulverizing a metal boride used as an electrically conductive composition of a thick film resistor that can be fired in a non-oxidizing gas atmosphere is described in JP-B-59-51721.
The raw material powder was mechanically ground, for example, by a vibration mill, and then sieved to obtain a desired particle size. However, in mechanical grinding, the particle size obtained by this grinding is limited, and the minimum particle size is about 0.2 μm,
The shapes are also irregular.
上記従来技術では、粒子サイズ及びその形状について
配慮がされておらず、厚膜抵抗体として用いた場合、面
積抵抗値で数KΩ/□以上で安定な抵抗体が得られない
といつた問題点があつた。In the above-mentioned prior art, no consideration is given to the particle size and its shape, and when it is used as a thick film resistor, it is a problem that a stable resistor having a sheet resistance of several KΩ / □ or more cannot be obtained. I got it.
本発明の目的は、粒子サイズが最大でも0.1μmでか
つ球状で滑らかな表面を有する金属ホウ化物超微粒子を
提供することにある。It is an object of the present invention to provide ultrafine metal boride particles having a particle size of 0.1 μm at the maximum and having a spherical and smooth surface.
本発明の他の目的は、この金属ホウ化物超微粒子を厚
膜抵抗体の電気伝導組成物として用いて、面積抵抗値で
10〜1MΩ/□の広い範囲で安定した抵抗値が得られる厚
膜抵抗体ペーストを提供することにある。Another object of the present invention is to use the metal boride ultrafine particles as an electrically conductive composition of a thick film resistor, and
It is to provide a thick film resistor paste which can obtain a stable resistance value in a wide range of 10 to 1 MΩ / □.
上記目的を達成するために、系内のガス雰囲気を窒素
ガスもしくは窒素ガスと不活性ガスとの混合ガス雰囲気
として、電極の両方を金属ホウ化物原材料として斜向配
置して両電極間にアークを発生させ、前記原材料の超微
粒子を生成するようにしたものである。In order to achieve the above object, the gas atmosphere in the system is nitrogen gas or a mixed gas atmosphere of nitrogen gas and an inert gas, both electrodes are obliquely arranged as a metal boride raw material, and an arc is formed between both electrodes. It is generated to generate ultrafine particles of the raw material.
系内ガス雰囲気を非酸化性ガスとして、電極の両方を
金属ホウ化物原材料として斜向配置して両極間にアーク
を発生させ、このアーク熱により原材料から金属ホウ化
物蒸気を発生させて超微粒子を製造する。この時金属ホ
ウ化物特に六ホウ化ランタンは強還元性物質のため、雰
囲気ガスを非酸化性ガスにすることにより、原材料がホ
ウ化物から酸化物に変化することを防ぐことができる。
特に窒素ガス雰囲気では六ホウ化ランタンは非常に安定
であることから雰囲気ガスを窒素ガスもしくは不活性ガ
スと窒素ガスとの混合ガスにすることが望ましい。また
両電極を斜向配置することにより、金属ホウ化物蒸気の
発生を防げるアーク圧力を低減することができるので、
効率よく超微粒子を製造することができる。The gas atmosphere in the system is a non-oxidizing gas, both electrodes are diagonally arranged as a metal boride raw material, and an arc is generated between both electrodes.The arc heat generates a metal boride vapor from the raw material to generate ultrafine particles. To manufacture. At this time, since the metal boride, especially lanthanum hexaboride, is a strongly reducing substance, by changing the atmosphere gas to a non-oxidizing gas, it is possible to prevent the raw material from changing from boride to oxide.
In particular, since lanthanum hexaboride is very stable in a nitrogen gas atmosphere, it is desirable to use nitrogen gas or a mixed gas of an inert gas and nitrogen gas as the atmosphere gas. Also, by arranging both electrodes in an oblique direction, it is possible to reduce the arc pressure that can prevent the generation of metal boride vapor,
Ultrafine particles can be efficiently produced.
以上、本発明の一実施例を第1図〜第5図により説明
する。An embodiment of the present invention will be described above with reference to FIGS.
第1図において、1は六ホウ化ランタン(LaB6)電
極、2はLaB6原材料、3は水冷銅ルツボ、4はアーク、
5は放電用電源、6は雰囲気ガス導入口、7は超微粒子
発生室、8は超微粒子捕集部、9は循環ポンプ、10は排
気ポンプである。In FIG. 1, 1 is a lanthanum hexaboride (LaB 6 ) electrode, 2 is a LaB 6 raw material, 3 is a water-cooled copper crucible, 4 is an arc,
Reference numeral 5 is a discharge power source, 6 is an atmosphere gas inlet, 7 is an ultrafine particle generating chamber, 8 is an ultrafine particle collecting section, 9 is a circulation pump, and 10 is an exhaust pump.
上記構成において、まず排気ポンプ10により発生室7
及び循環通路系内を真空排気後、雰囲気ガス導入口6か
ら窒素ガスを約0.1MPaまで封入し、循環ポンプ9によつ
て上記系内を循環させる。次にLaB6電極と水冷銅ルツボ
3上に置いたLaB6原材料2との間に、放電用電源5から
電流を供給してアーク4を発生させることにより、LaB6
原材料2がアーク熱により蒸発し、冷却過程で超微粒子
となり、循環ガスと一緒に捕集部8に搬送されて捕集さ
れる。In the above structure, first the exhaust pump 10 generates the generation chamber 7
After the inside of the circulation passage system is evacuated, nitrogen gas is filled from the atmosphere gas inlet 6 up to about 0.1 MPa, and the circulation pump 9 circulates the inside of the system. Next, by supplying a current from the discharge power source 5 between the LaB 6 electrode and the LaB 6 raw material 2 placed on the water-cooled copper crucible 3 to generate an arc 4, the LaB 6
The raw material 2 is evaporated by the arc heat, becomes ultrafine particles in the cooling process, and is conveyed to the collecting unit 8 together with the circulating gas and collected.
上記作動中、LaB6原材料2に斜向配置した他方の電極
1を原材料と同材料のLaB6にすることにより、超微粒子
の中に不純物が混入することがなく高純度のLaB6超微粒
子を効率よく製造することができる。この時、LaB6原材
料2を陽極、LaB6電極1を陰極としてアークを発生させ
てLaB6電極の消耗を極力少なくすることにより長時間連
続して超微粒子を製造する。During the above operation, the other electrode 1 obliquely arranged on the LaB 6 raw material 2 is made of LaB 6 of the same material as the raw material, so that high purity LaB 6 ultrafine particles can be obtained without mixing impurities in the ultrafine particles. It can be manufactured efficiently. At this time, by using the LaB 6 raw material 2 as an anode and the LaB 6 electrode 1 as a cathode to generate an arc, consumption of the LaB 6 electrode is reduced as much as possible to continuously manufacture ultrafine particles.
一例として、系内雰囲気ガスとして窒素ガスを用い、
200A−40Vの条件で、機械的粉砕によつて製造した比表
面積5.4m2/gのLaB6粉を圧粉してペレート状にしたLaB6
原材料と、同様にして得たLaB6粉を焼結して棒状にした
LaB6電極を用いてLaB6超微粒子を製造した。第2図は製
造された超微粒子のX線回折パターンであり、第3図は
同じく原料粉のX線回折パターンである。比較して明ら
かなように原料粉と同じパターンであり、製造した超微
粒子がLaB6であることが分かる。また比表面積は83.0m2
/gであり、第4図の透過型電子顕微鏡写真に示すよう
に、比較的粒子サイズの揃つたかつ形状が球状に近い超
微粒子約5g/Hrが得られた。この超微粒子を厚膜抵抗体
として用いた結果、第5図に示すように10〜1MΩ/□の
広い範囲で安定した抵抗値が得られた。As an example, nitrogen gas is used as the system atmosphere gas,
Under the condition of 200A-40V, LaB 6 you pereto shape compacting the LaB 6 powder have been conducted under manufacturing mechanical grinding specific surface area 5.4 m 2 / g
Raw material and LaB 6 powder obtained in the same way were sintered into rods.
It was prepared LaB 6 fine particles using a LaB 6 electrode. FIG. 2 is an X-ray diffraction pattern of the manufactured ultrafine particles, and FIG. 3 is an X-ray diffraction pattern of the same raw material powder. As is clear from the comparison, the pattern is the same as that of the raw material powder, and it can be seen that the manufactured ultrafine particles are LaB 6 . The specific surface area is 83.0 m 2
As shown in the transmission electron micrograph of FIG. 4, about 5 g / Hr of ultrafine particles having a relatively uniform particle size and a nearly spherical shape were obtained. As a result of using these ultrafine particles as a thick film resistor, a stable resistance value was obtained in a wide range of 10 to 1 MΩ / □ as shown in FIG.
本発明によれば、電極の両方を金属ホウ化物として斜
向配置し、非酸化性雰囲気中で超微粒子を製造すること
により、不純物の混入がない、比較的粒子サイズの揃つ
た、かつ形状が球状の超微粒子を得ることができる。ま
たこの超微粒子を用いることにより、広い抵抗値範囲が
安定して得られる厚膜抵抗体を得ることができる。According to the present invention, both electrodes are obliquely arranged as metal borides and ultrafine particles are produced in a non-oxidizing atmosphere, so that impurities are not mixed in, the particle size is relatively uniform, and the shape is It is possible to obtain spherical ultrafine particles. Further, by using the ultrafine particles, it is possible to obtain a thick film resistor in which a wide resistance value range can be stably obtained.
第1図は本発明の一実施例を示す製造装置の図、第2図
は超微粒子のX線回折パターンを示す線図、第3図は原
料粉のX線回折パターンを示す線図、第4図は超微粒子
の粒子構造を示す電子顕微鏡写真系統、第5図は本発明
の超微粒子を用いた厚膜抵抗体の特性図である。 1……LaB6電極、2……LaB6原材料、3……水冷銅ルツ
ボ、4……アーク、5……放電用電源、6……雰囲気ガ
ス導入口、7……超微粒子発生室、8……超微粒子捕集
部。FIG. 1 is a diagram of a production apparatus showing an embodiment of the present invention, FIG. 2 is a diagram showing an X-ray diffraction pattern of ultrafine particles, and FIG. 3 is a diagram showing an X-ray diffraction pattern of raw material powder. FIG. 4 is an electron micrograph system showing the particle structure of ultrafine particles, and FIG. 5 is a characteristic diagram of a thick film resistor using the ultrafine particles of the present invention. 1 ... LaB 6 electrode, 2 ... LaB 6 raw material, 3 ... water-cooled copper crucible, 4 ... arc, 5 ... discharge power supply, 6 ... atmosphere gas inlet, 7 ... ultrafine particle generation chamber, 8 ...... Ultrafine particle collection unit.
Claims (4)
法において、電極の両方を金属ホウ化物原材料として非
酸化性ガス雰囲気中で斜向配置して両電極間にアークを
発生させて前記原材料の超微粒子を生成することを特徴
とする金属ホウ化物超微粒子の製造方法。1. A method for producing ultra-fine particles using an arc heat source, wherein both electrodes are diagonally arranged as a metal boride raw material in a non-oxidizing gas atmosphere to generate an arc between both electrodes, and the raw material is produced. A method for producing ultrafine metal boride particles, which comprises producing ultrafine particles of
スと窒素の混合ガスである請求項1記載の金属ホウ化物
超微粒子の製造方法。2. The method for producing ultrafine metal boride particles according to claim 1, wherein the non-oxidizing gas is nitrogen gas or a mixed gas of inert gas and nitrogen.
ある請求項1記載の金属ホウ化物超微粒子の製造方法。3. The method for producing ultrafine metal boride particles according to claim 1, wherein the metal boride raw material is lanthanum hexaboride.
いた厚膜抵抗組成物。4. A thick film resistance composition using the metal boride ultrafine particles according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63208388A JP2550160B2 (en) | 1988-08-24 | 1988-08-24 | Method for producing ultrafine metal boride particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63208388A JP2550160B2 (en) | 1988-08-24 | 1988-08-24 | Method for producing ultrafine metal boride particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0259418A JPH0259418A (en) | 1990-02-28 |
| JP2550160B2 true JP2550160B2 (en) | 1996-11-06 |
Family
ID=16555437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63208388A Expired - Lifetime JP2550160B2 (en) | 1988-08-24 | 1988-08-24 | Method for producing ultrafine metal boride particles |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2550160B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03123001A (en) * | 1988-11-21 | 1991-05-24 | Hitachi Ltd | semiconductor equipment |
-
1988
- 1988-08-24 JP JP63208388A patent/JP2550160B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0259418A (en) | 1990-02-28 |
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