JP2554489B2 - Magnetic recording medium manufacturing equipment - Google Patents
Magnetic recording medium manufacturing equipmentInfo
- Publication number
- JP2554489B2 JP2554489B2 JP62093386A JP9338687A JP2554489B2 JP 2554489 B2 JP2554489 B2 JP 2554489B2 JP 62093386 A JP62093386 A JP 62093386A JP 9338687 A JP9338687 A JP 9338687A JP 2554489 B2 JP2554489 B2 JP 2554489B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- flow control
- control wall
- wall surface
- vapor flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000005291 magnetic effect Effects 0.000 title claims description 9
- 238000001704 evaporation Methods 0.000 claims description 29
- 230000008020 evaporation Effects 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 17
- 239000003302 ferromagnetic material Substances 0.000 claims description 16
- 230000008016 vaporization Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000009834 vaporization Methods 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910017563 LaCrO Inorganic materials 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000010425 asbestos Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052895 riebeckite Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は真空蒸着等に使用する蒸着装置に関し、特に
基体と強磁性材料の蒸発源との間に蒸気流制御壁面を備
えてなる磁気記録媒体の製造装置に関するものである。The present invention relates to a vapor deposition apparatus used for vacuum vapor deposition and the like, and more particularly to magnetic recording provided with a vapor flow control wall surface between a substrate and an evaporation source of a ferromagnetic material. The present invention relates to a medium manufacturing apparatus.
近年、記録密度が一段と優れたものとして、強磁性材
料を薄膜として基体上に被着してなる、所謂、金属薄膜
型記録媒体が注目を集めている。この様な金属薄膜記録
媒体は、通常真空状態で、蒸着・スパッタ等によって製
造されるものであるが、蒸着物質の蒸着効率（材料使用
効率）が非常に低く、実用化の大きな障害となってい
た。これに対して、蒸着効率を高めるために、強磁性材
料を高周波誘導加熱で蒸発させる蒸発源と被蒸着基体と
の間に、蒸発源の上側に蒸発蒸気流を制御する蒸気流制
御壁面を配置させる真空蒸着方法が考案されていた。In recent years, so-called metal thin-film type recording media, in which a ferromagnetic material is applied as a thin film on a substrate, have attracted attention as recording media having a much higher recording density. Such a metal thin film recording medium is usually manufactured by vapor deposition, sputtering, etc. in a vacuum state, but the vapor deposition efficiency (material use efficiency) of the vapor deposition material is very low, which is a major obstacle to practical use. It was On the other hand, in order to improve the vapor deposition efficiency, a vapor flow control wall surface for controlling the vapor vapor flow is arranged above the vapor source between the vapor source for vaporizing the ferromagnetic material by high frequency induction heating and the vapor deposition substrate. A vacuum vapor deposition method has been devised.
従来、蒸気流制御壁面の内側に強磁性材料が蒸着・付
着し堆積するのを防ぐために、蒸気流制御壁面の材質と
して高融点金属（モリブデン，タングステン等）を用い
て、通電加熱によって蒸気流制御壁面の温度を適切に保
っていた。Conventionally, in order to prevent the ferromagnetic material from being deposited / attached to the inside of the steam flow control wall surface, refractory metal (molybdenum, tungsten, etc.) is used as the material of the steam flow control wall surface, and the steam flow is controlled by electric heating. The wall temperature was kept proper.
しかるに、蒸気流制御面は、蒸発面より輻射熱を受け
るが、その入射輻射熱量は、一般的に、蒸発面に近い部
分では大きく、蒸発面か遠い部分では小さい傾向にあ
る。従って、強磁性材料が蒸着・付着堆積されやすい場
所は、蒸発面から遠い部分の蒸気流制御壁面であり、蒸
発面に近い部分の蒸気流制御壁面では、断熱性が充分確
保されていれば、強磁性材料は蒸気流制御壁面で蒸着・
付着堆積せずに、溶解又は再蒸発する。However, although the vapor flow control surface receives radiant heat from the evaporating surface, the incident radiant heat amount generally tends to be large in a portion near the evaporating surface and small in a portion distant from the evaporating surface. Therefore, the place where the ferromagnetic material is likely to be vapor-deposited / deposited is the vapor flow control wall surface far from the vaporization surface, and if the vapor flow control wall surface near the vaporization surface has sufficient heat insulation, Ferromagnetic material is vapor-deposited on the vapor flow control wall.
Dissolves or re-evaporates without depositing.
しかるに、従来の高融点金属で構成さた蒸気流制御壁
面は、特に、蒸発面に近い部分に関して耐久性・耐蝕性
に問題点をもっていた。However, the conventional vapor flow control wall made of a refractory metal has problems in durability and corrosion resistance, especially in the portion near the evaporation surface.
本発明は上述した問題点を解決するためいに発案され
たもので、耐久性・耐蝕性を向上する磁気記録媒体の製
造装置を提供することを目的とするものである。The present invention was devised to solve the above-mentioned problems, and an object of the present invention is to provide a magnetic recording medium manufacturing apparatus that improves durability and corrosion resistance.
本発明の前記目的は真空槽内で、強磁性材料を高周波
誘導加熱で蒸発させる蒸発源と被蒸着基体との間に、前
記蒸発源から前記被蒸着基体に向かって蒸発する蒸発蒸
気流の蒸発蒸気流路を形成する蒸気流制御壁面を備えた
磁気記録媒体の製造装置において、前記蒸発源と前記蒸
気流制御壁面とは略連続した状態で略垂直に延びる規制
面で囲まれる前記蒸発蒸気流路を構成するべく配置され
ており、前記蒸気流制御壁面はセラミックにて構成さ
れ、且つ前記蒸気流制御壁面により画成される前記蒸発
蒸気流路の横断面積が、前記蒸発源側の端面から略中間
部にかけて増加すると共に、該略中間部から前記被蒸着
基体側の端面にかけて減少するように構成されたことを
特徴とする磁気記録媒体の製造装置によって達成するこ
とができる。The object of the present invention is to evaporate a vaporized vapor stream that evaporates from the evaporation source toward the vapor deposition substrate between the vaporization source for vaporizing the ferromagnetic material by high frequency induction heating and the vapor deposition substrate in the vacuum chamber. In a magnetic recording medium manufacturing apparatus provided with a vapor flow control wall surface forming a vapor flow path, the vaporization vapor flow surrounded by a regulation surface extending substantially vertically in a state where the vaporization source and the vapor flow control wall surface are substantially continuous. The vapor flow control wall surface is made of ceramic, and the cross-sectional area of the vaporized vapor flow path defined by the vapor flow control wall surface is from the end surface on the vaporization source side. This can be achieved by an apparatus for manufacturing a magnetic recording medium, characterized in that it is configured to increase toward the substantially middle portion and decrease from the substantially middle portion to the end surface on the side of the deposition target substrate.
以下に、本発明の装置の一実施態様を第１図によって
説明する。An embodiment of the device of the present invention will be described below with reference to FIG.
第１図において、真空槽１は、排気ユニット（ポン
プ）13によって真空雰囲気に保たれている。強磁性材料
３は、蒸発源（坩堝）２において加熱コイル４を用い
て、高周波電源５で高周波誘導加熱によって加熱され
る。一方、高分子成形物基体９は送り出しローラ６から
送りだされ、蒸着ドラム７上でマスク10によって入射角
の規制された強磁性材料３の蒸気が蒸着され、巻き取り
ローラ８に巻き取られる。In FIG. 1, the vacuum chamber 1 is kept in a vacuum atmosphere by an exhaust unit (pump) 13. The ferromagnetic material 3 is heated in the evaporation source (crucible) 2 by high frequency induction heating using a heating coil 4 and a high frequency power supply 5. On the other hand, the polymer molded body 9 is delivered from the delivery roller 6, the vapor of the ferromagnetic material 3 whose incident angle is regulated by the mask 10 is vapor-deposited on the vapor deposition drum 7, and is taken up by the take-up roller 8.
蒸発源２は、高周波誘導加熱によって加熱されるた
め、蒸気流制御面11は蒸発源２の直ぐ上に殆ど隙間なく
配置され、且つ蒸気流路の周囲を略垂直な規制面にほぼ
完全に包囲するように構成されている。Since the evaporation source 2 is heated by high-frequency induction heating, the vapor flow control surface 11 is arranged immediately above the evaporation source 2 with almost no gap, and the periphery of the vapor flow path is almost completely surrounded by a substantially vertical restriction surface. Is configured to.
また、蒸気流制御壁面11は第１図に示した様に、蒸発
蒸気流路の横断面積は、蒸発源２側の端面から略中間部
15にかけて増加し（徐々に広がるように増加し）、この
略中間部15から被蒸着基体側の端面にかけて減少する構
造（徐々に減少する）になっていて、その外周には断熱
材12が巻かれている。Further, as shown in FIG. 1, the vapor flow control wall surface 11 has a cross-sectional area of the vaporized vapor flow passage that is approximately the middle portion from the end surface on the vaporization source 2 side.
The structure is such that it increases over 15 (increases so that it gradually expands) and decreases from this intermediate portion 15 to the end face on the deposition target substrate side (decreases gradually), and the heat insulating material 12 is wound around its outer periphery. Has been.
本発明において蒸気流制御壁面の流路断面積が蒸発面
側端面が略中間部15にかけて増加し、該中間部15から被
蒸着基体側端面にかけて減少するということは、蒸気流
制御壁面の拡大断面図、第２図に示すように蒸発面側端
面14から中間部15にかけて流路断面積が増加し、中間部
15から被蒸着基体側端面16にかけて減少するものであ
る。その条件としては蒸発面側端面14より断面の広がる
角度θ＝５〜30゜、蒸発面側端面14より中間部15に到る
距離a,中間部15より被蒸着基体側面16迄の距離ｂとした
時、b/a＝1/10〜1/2,両方の条件を満足する条件が好ま
しい。In the present invention, the flow passage cross-sectional area of the vapor flow control wall surface increases from the evaporation surface side end surface to approximately the intermediate portion 15, and decreases from the intermediate portion 15 to the vapor deposition substrate side end surface, which means an enlarged cross section of the vapor flow control wall surface. As shown in FIG. 2 and FIG. 2, the flow passage cross-sectional area increases from the evaporation surface side end surface 14 to the intermediate portion 15,
It decreases from 15 to the end surface 16 on the deposition substrate side. The conditions are as follows: the spread angle .theta. = 5 to 30.degree. It is preferable that b / a = 1/10 to 1/2, both of which are satisfied.
前記蒸気流制御壁面11の材質としは、例えば、MgO、Z
rO2、AL2O3、CaO、Y2O3、ThO2、BN、BeO、CaO安定化ZrO
2（ZrO2が９％〜98％＋CaOが10％〜２％）、Y2O3安定化
ZrO2（ZrO2が90％〜98％＋Y2O3が10％〜２％）等のセラ
ミック、さらには、B4C、SiC、ZrB2、TiB2、TaB2、Ti
N、ZrN、TaN、TiC、ZrC、HfC、NbC、VC、WC、TaC.MoS
i2、LaCrO3等を用いることができ、前記蒸気流制御壁面
11の耐久性が良好なものとなる。The material of the vapor flow control wall surface 11 is, for example, MgO, Z
rO 2 , AL 2 O 3 , CaO, Y 2 O 3 , ThO 2 , BN, BeO, CaO stabilized ZrO
2 (9% to 98% ZrO 2 + 10% to 2% CaO), Y 2 O 3 stabilization
Ceramics such as ZrO 2 (90% to 98% of ZrO 2 + 10% to 2% of Y 2 O 3 ) and further B 4 C, SiC, ZrB 2 , TiB 2 , TaB 2 , Ti
N, ZrN, TaN, TiC, ZrC, HfC, NbC, VC, WC, TaC.MoS
i 2 , LaCrO 3, etc. can be used, and the vapor flow control wall
11 has good durability.
又、前記蒸発源２の材質としては、例えば、MgO、ZrO
2、Al2O3、CaO、Y2O3、ThO2、BN、BeC、CaO安定化ZrO2
（ZrO2が90％〜98％＋CaOが10％〜２％）、Y2O3安定化Z
rO2（ZrO2が90％〜98％＋Y2O3が10％〜２％）等のセラ
ミック、さらには、B4C、SiC、ZrB2、TiB2、TaB2、Ti
N、ZrN、TaN、TiC、ZrC、HfC、NbC、VC、WC、TaC、MoSi
2、LaCrO3等を用いることができ、該蒸発源２のの耐久
性も良好なものとなる。The material of the evaporation source 2 is, for example, MgO or ZrO.
2 , Al 2 O 3 , CaO, Y 2 O 3 , ThO 2 , BN, BeC, CaO stabilized ZrO 2
(ZrO 2 90% -98% + CaO 10% -2%), Y 2 O 3 stabilized Z
Ceramics such as rO 2 (90% to 98% ZrO 2 + 10% to 2% Y 2 O 3 ), and further B 4 C, SiC, ZrB 2 , TiB 2 , TaB 2 , Ti
N, ZrN, TaN, TiC, ZrC, HfC, NbC, VC, WC, TaC, MoSi
2 , LaCrO 3, etc. can be used, and the durability of the evaporation source 2 also becomes good.
前記断熱材12の材料としては上述した各種セラミック
類、アスベスト、炭素繊維、ロックウール等を使用する
ことができる。As the material of the heat insulating material 12, the above-mentioned various ceramics, asbestos, carbon fiber, rock wool and the like can be used.
次に、本発明の製造装置における蒸着プロセスに関し
て、詳しく説明する。Next, the vapor deposition process in the manufacturing apparatus of the present invention will be described in detail.
強磁性材料３は、蒸発源２内で加熱され蒸発する。蒸
発した強磁性材料３は蒸着効率を向上するために設置さ
れた蒸気流制御壁面11に衝突する分子と蒸気流制御壁面
11の上部開口部から飛散する分子の二種類に区別され
る。前者の蒸気流制御壁面11に衝突した分子は、蒸気流
制御壁面11の温度が強磁性材料３の融点以上に保たれて
いない場合、蒸気流制御壁面11に蒸着・堆積して、強磁
性材料３の蒸気流を妨げる事になる。The ferromagnetic material 3 is heated and evaporated in the evaporation source 2. The vaporized ferromagnetic material 3 collides with the vapor flow control wall surface 11 installed to improve the vapor deposition efficiency and the vapor flow control wall surface.
There are two types of molecules that are scattered from the upper opening of 11. When the temperature of the vapor flow control wall surface 11 is not kept above the melting point of the ferromagnetic material 3, the molecules colliding with the vapor flow control wall surface 11 of the former are deposited and deposited on the vapor flow control wall surface 11 to form the ferromagnetic material. It will impede the steam flow of 3.
本発明では、蒸気流制御壁面11の流路断面積は、蒸発
面側端面から中間部にかけて増加し、中間部から被蒸着
基体側端面にかけて減少する形状になっているので、蒸
気流制御壁面11は、蒸発源２に近い部分は、蒸発面輻射
熱入射角が小さく、被蒸着基板９に近い部分は蒸発面輻
射熱入射角が大きくなっている。一方、蒸発面輻射熱の
強度は距離の２乗に反比例する事より、蒸気例制御壁面
11の蒸発源２の近い部分で大きく、被蒸着基板９に近い
部分で小さくなっている。In the present invention, since the flow passage cross-sectional area of the vapor flow control wall surface 11 has a shape that increases from the end surface on the evaporation surface side to the intermediate portion and decreases from the intermediate portion to the end surface on the deposition substrate side, the vapor flow control wall surface 11 In the portion near the evaporation source 2, the evaporation surface radiation heat incident angle is small, and in the portion near the deposition target substrate 9, the evaporation surface radiation heat incident angle is large. On the other hand, the intensity of radiant heat on the evaporative surface is inversely proportional to the square of the distance.
11 is large near the evaporation source 2, and is small near the deposition target substrate 9.
従って、輻射熱入射角と輻射年強度の蒸気流制御壁面
11での分布は、相反関係にある事になり、結果的に入射
輻射熱量の分布は均一になり温度分布も均一になる。Therefore, the steam flow control wall with radiant heat incident angle and radiant intensity
The distributions at 11 are in a reciprocal relationship, and as a result, the distribution of incident radiant heat is uniform and the temperature distribution is also uniform.
次に、本発明の具体的に実施例について説明する。 Next, specific examples of the present invention will be described.
蒸発源として内径50mmの坩堝，高周波誘導加熱電源と
して周波数200（KHz），出力容量20（KW），高分子成形
物基体としてポリエチレン・テレフタレート・フイルム
（100mm幅・13μｍ厚），蒸着ドラムとして直径300mm
（表面温度約０℃），蒸気流制御壁面としてマグネシア
（上端内径50mm・中間内径80mm・下端内径 50mm・θ＝
14,外径90mm・高さ90mm）断熱材としてアルミナ繊維を
用いた。A crucible with an inner diameter of 50 mm as an evaporation source, a frequency of 200 (KHz) as a high-frequency induction heating power source, an output capacity of 20 (KW), a polyethylene terephthalate film (100 mm width and 13 μm thickness) as a polymer molding substrate, and a diameter of 300 mm as a vapor deposition drum.
(Surface temperature of about 0 ° C), magnesia as a steam flow control wall (upper end inner diameter 50 mm, middle inner diameter 80 mm, lower end inner diameter 50 mm, θ =
14, outer diameter 90 mm, height 90 mm) Alumina fiber was used as a heat insulating material.
蒸気流制御壁面は、蒸発源坩堝の真上に隙間をあけず
に配置させた。高周波電源の出力を９（KW），高分子成
形基体の搬送速度を15（m/min）となるよう、約1500
（Å）の膜厚でCoを蒸着させた結果、蒸着効率が22
（％）を得た。The vapor flow control wall surface was placed directly above the evaporation source crucible without leaving a gap. Approximately 1500 so that the output of the high frequency power source is 9 (KW) and the conveying speed of the polymer molding substrate is 15 (m / min).
As a result of depositing Co with a film thickness of (Å), the deposition efficiency is 22
(%).
なお、上記蒸気流制御壁面を取り外し、他の条件は上
記と同様に実験したところ、蒸着効率は９％であった。When the vapor flow control wall surface was removed and the other conditions were the same as the above, the vapor deposition efficiency was 9%.
以上述べたように、本発明は真空槽内にて強磁性材料
を高周波誘導加熱で被蒸着基体に向かって蒸発させて、
この蒸発蒸気流の蒸発蒸気流路を形成する蒸気流制御壁
面を備えた磁気記録媒体の製造装置であり、前記蒸発源
と前記蒸気流制御壁面とは略連続した状態で略垂直に延
びる規制面で囲まれる前記蒸発蒸気流路を構成するべく
配置されており、前記蒸気流制御壁面はセラミックにて
構成され、且つ前記蒸気流制御壁面により画性される前
記蒸発蒸気流路の横断面積が、前記蒸発源側の端面から
略中間部にかけて増加すると共に、該略中間部から前記
被蒸着基体側の端面にかけて減少するように構成されて
いる。As described above, according to the present invention, the ferromagnetic material is vaporized toward the deposition target substrate by high frequency induction heating in the vacuum chamber,
A device for manufacturing a magnetic recording medium having a vapor flow control wall surface forming an vaporized vapor flow path of the vaporized vapor flow, wherein the vaporization source and the vapor flow control wall surface extend substantially vertically in a substantially continuous state. Is arranged to form the evaporative vapor flow path surrounded by, the vapor flow control wall surface is made of ceramic, and the cross-sectional area of the evaporative vapor flow path defined by the vapor flow control wall surface, It is configured to increase from the end surface on the evaporation source side to the substantially middle portion and decrease from the substantially middle portion to the end surface on the deposition target substrate side.
したがって、前記蒸気流制御壁面の傾斜構造により蒸
発面輻射熱の入射量の制御性を改善して効率的な蒸着を
保証することができるだけでなく、又蒸気流制御壁面の
材質としてセラミックを用いる事により蒸気流制御壁面
の温度制御性を高め、さらに蒸気流制御壁面の耐久性・
耐蝕性を向上することが出来た。Therefore, not only can the controllability of the incident amount of radiant heat on the evaporation surface be improved by the inclined structure of the vapor flow control wall surface to ensure efficient vapor deposition, but also by using ceramic as the material of the vapor flow control wall surface. The temperature controllability of the steam flow control wall is improved, and the durability of the steam flow control wall is improved.
It was possible to improve the corrosion resistance.
第１図は、本発明の製造装置の一実施態様の縦断面図で
ある。第２図は本発明における蒸気流制御面の拡大縦断
面図である。 １……真空槽、２……蒸発源 ３……強磁性材料、４……加熱コイル ５……高周波誘導加熱電源 ６……送り出しローラ ７……蒸着ドラム ８……巻き取りローラ ９……高分子成形物基体 10……入射角規制用マスク 11……蒸気流制御壁面 12……断熱材、13……真空ポンプFIG. 1 is a longitudinal sectional view of an embodiment of the manufacturing apparatus of the present invention. FIG. 2 is an enlarged vertical sectional view of the steam flow control surface in the present invention. 1 ... Vacuum tank, 2 ... Evaporation source, 3 ... Ferromagnetic material, 4 ... Heating coil, 5 ... High frequency induction heating power source, 6 ... Sending roller, 7 ... Evaporating drum, 8 ... Winding roller, 9 ... High Molecule molding substrate 10 …… Incident angle control mask 11 …… Steam flow control wall 12 …… Insulation material 13 …… Vacuum pump
Claims (1)
で蒸発させる蒸発源と被蒸着基体との間に、前記蒸発源
から前記被蒸着基体に向かって蒸発する蒸発蒸気流の蒸
発蒸気流路を形成する蒸気流制御壁面を備えた磁気記録
媒体の製造装置において、 前記蒸発源と前記蒸気制御壁面とは略連続した状態で略
垂直に延びる規制面で囲まれる前記蒸発蒸気流路を構成
するべく配置されており、 前記蒸気流制御壁面はセラミックにて構成され、且つ前
記蒸気流制御壁面により画成される前記蒸発蒸気流路の
横断面積が、前記蒸発源側の端面から略中間部にかけて
増加すると共に、該略中間部から前記被蒸着基体側の端
面にかけて減少するように構成されたことを特徴とする
磁気記録媒体の製造装置。1. An evaporative vapor of an evaporative vapor stream that evaporates from the evaporation source toward the substrate to be vapor-deposited between an evaporation source for vaporizing a ferromagnetic material by high frequency induction heating and a substrate to be vapor-deposited in a vacuum chamber. In a magnetic recording medium manufacturing apparatus provided with a vapor flow control wall surface forming a flow path, the evaporation source and the vapor control wall surface, the evaporation vapor flow path surrounded by a restriction surface extending substantially vertically in a substantially continuous state, The vapor flow control wall surface is made of ceramic, and the cross-sectional area of the vaporized vapor flow path defined by the vapor flow control wall surface is substantially intermediate from the end surface on the vaporization source side. An apparatus for manufacturing a magnetic recording medium, characterized in that the magnetic recording medium is increased in the area from the substantially intermediate portion to the end surface on the vapor deposition substrate side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62093386A JP2554489B2 (en) | 1987-04-17 | 1987-04-17 | Magnetic recording medium manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62093386A JP2554489B2 (en) | 1987-04-17 | 1987-04-17 | Magnetic recording medium manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63259836A JPS63259836A (en) | 1988-10-26 |
| JP2554489B2 true JP2554489B2 (en) | 1996-11-13 |
Family
ID=14080871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62093386A Expired - Fee Related JP2554489B2 (en) | 1987-04-17 | 1987-04-17 | Magnetic recording medium manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2554489B2 (en) |
-
1987
- 1987-04-17 JP JP62093386A patent/JP2554489B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63259836A (en) | 1988-10-26 |
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