JP2554741B2 - Semiconductor laser array device - Google Patents
Semiconductor laser array deviceInfo
- Publication number
- JP2554741B2 JP2554741B2 JP1105205A JP10520589A JP2554741B2 JP 2554741 B2 JP2554741 B2 JP 2554741B2 JP 1105205 A JP1105205 A JP 1105205A JP 10520589 A JP10520589 A JP 10520589A JP 2554741 B2 JP2554741 B2 JP 2554741B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser array
- dimensional semiconductor
- array device
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 44
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 238000003491 array Methods 0.000 claims description 3
- 230000005284 excitation Effects 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910018885 Pt—Au Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 208000011726 slow pulse Diseases 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、固体レーザ結晶の励起や、加工用に用いら
れる高出力の半導体レーザアレイ装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-power semiconductor laser array device used for pumping and processing a solid-state laser crystal.
従来の技術 半導体レーザはスペクトル幅が狭く高効率であり、N
d:YAG結晶などの固体レーザ結晶の吸収スペクトルに波
長を合わせることにより効率良く励起できるため、従来
のランプに代る固体レーザ励起光源として近年注目を集
めるようになってきた。半導体レーザを固体レーザの励
起光源として用いる場合、励起光源の光密度が高いこと
が必要となる。半導体レーザの発光領域の大きさは10μ
ｍ×２μｍ程度であるため、多数の発光部であるレーザ
光出射点を一次元（直線的）あるいは二次元（平面的）
に並べた半導体レーザアレイとすることにより、極めて
高い光密度を得ることが可能である。半導体レーザをYA
Gレーザの励起光源に用いた場合の総合効率は、半導体
レーザの電気−光変換効率が30％、YAGレーザの入力励
起光−レーザ出力光変換効率が30％であるので、10％近
い値が得られ、これはランプ励起の場合の10倍以上とな
る。また、余分な波長の光の吸収による結晶の発熱がな
く、YAGレーザの冷却も軽減される。従来、半導体レー
ザで高出力を得る場合、多数のレーザ光出射点を高密度
でもって二次元にすなわち平面上に配置する必要があ
る。ところで、半導体レーザは結晶の壁開面を共振器に
用いるため、一枚の基板上にモノリシックにレーザ光出
射点を並べることは容易ではない。そこで一次元にレー
ザ光出射点を並べたバー状の半導体レーザアレイを用
い、これをさらに二次元に配置することが考えられる。Conventional technology Semiconductor lasers have a narrow spectral width and high efficiency.
Since it can be efficiently excited by adjusting the wavelength to the absorption spectrum of a solid-state laser crystal such as a d: YAG crystal, it has recently attracted attention as a solid-state laser excitation light source that replaces the conventional lamp. When using a semiconductor laser as an excitation light source for a solid-state laser, it is necessary that the excitation light source has a high light density. The size of the emitting area of the semiconductor laser is 10μ
Since it is about m × 2 μm, the laser light emitting points, which are a large number of light emitting parts, are one-dimensional (linear) or two-dimensional (planar).
It is possible to obtain an extremely high light density by arranging the semiconductor laser arrays arranged in line. YA semiconductor laser
The total efficiency when used as the excitation light source of the G laser is 30% in the electric-optical conversion efficiency of the semiconductor laser and 30% in the input excitation light-laser output light conversion efficiency of the YAG laser. It is obtained, which is more than 10 times that in the case of lamp excitation. Further, the crystal does not generate heat due to absorption of light of an extra wavelength, and cooling of the YAG laser is also reduced. Conventionally, in order to obtain a high output with a semiconductor laser, it is necessary to arrange a large number of laser light emitting points two-dimensionally, that is, on a plane with high density. By the way, since a semiconductor laser uses a crystal wall opening face as a resonator, it is not easy to arrange laser light emitting points monolithically on one substrate. Therefore, it is conceivable to use a bar-shaped semiconductor laser array in which laser light emitting points are arranged one-dimensionally and to arrange this in two dimensions.
発明が解決しようとする課題 ところで、半導体レーザの光出射点を高密度に並べた
場合に問題となるのは発熱である。特に、半導体レーザ
は、その電流のしきい値が温度に敏感であり、素子の発
熱によって光出力が飽和する現象が起こる。また高温で
の動作では著しく素子の寿命を縮める。たとえば、素子
温度が10度上昇すると寿命は半分になる。そのために光
の最大出力を上げるには、いかに効率よく放熱を行な
い、素子温度を低く保つかが重要となるが、二次元の半
導体レーザアレイを単にヒートシンク上に載置融着する
ことができず、したがってどうしても放熱が十分に行わ
れないという問題があった。なお、放熱が悪いと、連続
発振を得ることは非常に困難となり、短いパルス幅（１
μｓ以下）で、繰り返しの遅いパルス動作しかさせるこ
とができない。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention By the way, when the light emitting points of the semiconductor laser are arranged in high density, a problem is heat generation. Particularly, the semiconductor laser has a current threshold value that is sensitive to temperature, and the phenomenon that the light output is saturated due to heat generation of the element occurs. In addition, operating at high temperatures significantly shortens the life of the device. For example, if the element temperature rises 10 degrees, the life will be halved. Therefore, in order to increase the maximum light output, it is important to efficiently dissipate heat and keep the element temperature low, but it is not possible to simply place and fuse the two-dimensional semiconductor laser array on the heat sink. Therefore, there is a problem that heat is not sufficiently radiated. If heat dissipation is poor, it will be very difficult to obtain continuous oscillation, and the short pulse width (1
(μs or less), only repetitive slow pulse operation can be performed.
そこで、本発明は上記課題を解消し得る半導体レーザ
アレイ装置を提供することを目的とする。Therefore, an object of the present invention is to provide a semiconductor laser array device capable of solving the above problems.
課題を解決するための手段 上記課題を解決するため、本発明の半導体レーザアレ
イ装置は、複数個のレーザ光出射点が一次元に並べられ
てなる一次元半導体レーザアレイを、熱伝導性の良い絶
縁板の間に複数個層状に配置して二次元半導体レーザア
レイを構成し、かつこの二次元半導体レーザアレイを、
その絶縁板を介して放熱部材上に載置したものである。Means for Solving the Problems In order to solve the above problems, the semiconductor laser array device of the present invention is a one-dimensional semiconductor laser array in which a plurality of laser light emitting points are one-dimensionally arranged and has good thermal conductivity. A plurality of layers are arranged between insulating plates to form a two-dimensional semiconductor laser array, and the two-dimensional semiconductor laser array is
It is placed on the heat dissipation member via the insulating plate.
作用 上記の構成において、一次元半導体レーザアレイから
発生した熱は熱伝導性の良い絶縁板を介して放熱部に伝
導されて、放熱が十分に行われる。したがって半導体レ
ーザアレイ装置の温度上昇が抑制されるとともに連続発
振も可能となる。Action In the above configuration, the heat generated from the one-dimensional semiconductor laser array is conducted to the heat radiating portion via the insulating plate having good thermal conductivity, and the heat is sufficiently radiated. Therefore, the temperature rise of the semiconductor laser array device is suppressed and continuous oscillation is possible.
実施例 以下、本発明の一実施例を図面に基づき説明する。Embodiment An embodiment of the present invention will be described below with reference to the drawings.
第１図に半導体レーザアレイ装置の外観斜視図、第２
図に同装置の要部斜視図および部品分解斜視図を示す。FIG. 1 is an external perspective view of a semiconductor laser array device, FIG.
The figure shows a perspective view of essential parts and an exploded perspective view of parts.
第１図および第２図において、１はたとえば10個のレ
ーザ光出射点（発光点ともいう）が100μｍの間隔で一
次元に並べて構成されたバー状の一次元半導体レーザア
レイで、長さ1.2mm、厚さ100μｍ、共振器長さ250μｍ
とされている。この一次元半導体レーザアレイ１は、５
個並置されるとともに、これらの間および両外側に熱伝
導性の良い材料で構成された絶縁板２が介装されて層状
にされるとともに、一次元半導体レーザアレイ１とは反
対側の各絶縁板２の間に、絶縁板２と同じ材質で構成さ
れた絶縁スペーサ３が介装されて、二次元半導体レーザ
アレイ４が構成されている。そして、さらにこの層状の
二次元半導体レーザアレイ４は、その絶縁スペーサ３側
の端面がヒートシンク（放熱部材）５の表面に接触する
ように、ヒートシンク５上に載置されている。なお、上
記絶縁板２の材質としては、熱伝導率の点ではダイヤモ
ンドが一番優れているが、コストの点と熱膨張係数がレ
ーザ結晶であるGaAsとほとんど同じであるという点でBN
の方が優れている。BNの熱伝導率はダイヤモンドの３分
の１であるが銅より２倍以上と優れているので本実施例
においてはBNが使用されている。また、絶縁板２の厚さ
は、100μｍとされており、第２図に示すように、上下
部の表面にはCr−Pt−Auのメタライズパターンａがほど
こされている。なお、金パターン上にはAu−Sn、Pb−Sn
などの半田材が蒸着され、一次元半導体レーザアレイ１
と融着できるようにされている。上記半田材は熱伝導性
が悪いため、その膜厚は３μｍと薄くされている。ま
た、上記二次元半導体レーザアレイ４は、金メッキされ
た銅製のヒートシンク５上に、Pb−Snなどの半田材を用
いて融着されており、もちろん絶縁スペーサ３を介装し
たのは、ヒートシンク５との熱伝導面積を増加させるた
めである。上記絶縁スペーサ３の表面にも金のメタライ
ズパターンａがほどこされている。なお、ヒートシンク
５側の電極端子６と二次元半導体レーザアレイ４の電極
端子としての両側部の絶縁板２とは金ワイヤ７で接続さ
れ、また10Aい近い大電流を流すため、金ワイヤ７の本
数は50本程度にされている。In FIGS. 1 and 2, reference numeral 1 denotes a bar-shaped one-dimensional semiconductor laser array in which ten laser light emitting points (also referred to as light emitting points) are one-dimensionally arranged at intervals of 100 μm and have a length of 1.2. mm, thickness 100 μm, resonator length 250 μm
It has been. This one-dimensional semiconductor laser array 1 has 5
Insulating plates 2 made of a material having a high thermal conductivity are interposed between and on the outside of each of them to form a layer, and each insulating on the side opposite to the one-dimensional semiconductor laser array 1 is arranged. A two-dimensional semiconductor laser array 4 is formed by interposing an insulating spacer 3 made of the same material as the insulating plate 2 between the plates 2. Further, the layered two-dimensional semiconductor laser array 4 is placed on the heat sink 5 such that the end surface on the insulating spacer 3 side is in contact with the surface of the heat sink (heat dissipation member) 5. As the material of the insulating plate 2, diamond is the best in terms of thermal conductivity, but BN in terms of cost and thermal expansion coefficient is almost the same as GaAs which is a laser crystal.
Is better. The thermal conductivity of BN is one-third that of diamond, but it is more than double that of copper. Therefore, BN is used in this embodiment. Further, the thickness of the insulating plate 2 is 100 μm, and as shown in FIG. 2, Cr-Pt-Au metallized patterns a are provided on the upper and lower surfaces. Note that Au-Sn and Pb-Sn are on the gold pattern.
One-dimensional semiconductor laser array 1
It can be fused with. Since the solder material has poor thermal conductivity, its thickness is as thin as 3 μm. The two-dimensional semiconductor laser array 4 is fused on a heat sink 5 made of copper plated with gold by using a solder material such as Pb-Sn. Of course, the insulating spacer 3 is interposed between the heat sink 5 and This is to increase the heat transfer area with. The surface of the insulating spacer 3 is also provided with a metallized pattern a of gold. The electrode terminals 6 on the heat sink 5 side and the insulating plates 2 on both sides as the electrode terminals of the two-dimensional semiconductor laser array 4 are connected by a gold wire 7, and a large current close to 10 A is passed through the gold wire 7. The number is about 50.
上記構成においては、各一次元半導体レーザアレイ１
で発生した熱は、絶縁板２および絶縁スペーサ３を介し
てヒートシンク５側に伝導されて、放熱が十分に行われ
る。なお、第１図および第２図中、矢印Ａは二次元半導
体レーザアレイ４から出射されるレーザ光である。In the above configuration, each one-dimensional semiconductor laser array 1
The heat generated in 1 is conducted to the heat sink 5 side through the insulating plate 2 and the insulating spacer 3, and heat is sufficiently dissipated. In FIGS. 1 and 2, an arrow A indicates a laser beam emitted from the two-dimensional semiconductor laser array 4.
ここで、上記の半導体レーザアレイ装置における電流
−出力特性を第３図に示す。なお、一次元半導体レーザ
アレイ１が５本直列に接続されているので、印加電圧は
約10Vとなる。第３図から分かるように、6Aの電流で20W
以上の光出力が得られており、電気からレーザ光への変
換効率は33％と非常に良い結果が得られている。発光部
であるレーザ光出射点の面積は約1mm2であるので光密度
は2kw/cm2となり、YAGレーザの励起光源としては満足す
べき特性が得られている。Here, FIG. 3 shows current-output characteristics in the above-mentioned semiconductor laser array device. Since the five one-dimensional semiconductor laser arrays 1 are connected in series, the applied voltage is about 10V. As can be seen from Fig. 3, 20W at 6A current
The above optical output is obtained, and the conversion efficiency from electricity to laser light is 33%, which is a very good result. Since the area of the laser light emitting point, which is the light emitting portion, is about 1 mm 2 , the light density is 2 kw / cm 2 , and the characteristics satisfactory as the excitation light source of the YAG laser are obtained.
なお、絶縁板２および絶縁スペーサ３の材質として、
窒化ホウ素（BN）、ダイヤモンド（Ｃ）の他に、たとえ
ば炭化ケイ素（SiC）、ベリリア（BeO）、窒化アルミニ
ウム（AlN）などが使用される。In addition, as a material of the insulating plate 2 and the insulating spacer 3,
Besides boron nitride (BN) and diamond (C), for example, silicon carbide (SiC), beryllia (BeO), aluminum nitride (AlN), etc. are used.
発明の効果 以上のように、本発明の構成によれば、一次元半導体
レーザアレイから発生する熱を熱伝導性の良い絶縁板を
介して放熱部材に伝導させて十分な放熱を行うことがで
き、したがって装置の寿命が延びるとともに、大きな出
力でもって連続発振を行うことができる。特に、この半
導体レーザアレイ装置は、スラブ型固体レーザの連続動
作用励起光源に適しており、さらに多数のブロックを集
積することにより高効率のKW級連続発振スラブ型固体レ
ーザの実現を可能とするものである。EFFECTS OF THE INVENTION As described above, according to the configuration of the present invention, the heat generated from the one-dimensional semiconductor laser array can be conducted to the heat radiating member via the insulating plate having good thermal conductivity, and sufficient heat radiation can be performed. Therefore, the life of the device is extended and continuous oscillation can be performed with a large output. In particular, this semiconductor laser array device is suitable for a pumping light source for continuous operation of a slab type solid-state laser, and by integrating a large number of blocks, it is possible to realize a highly efficient KW class continuous wave slab type solid-state laser. It is a thing.
第１図は本発明の半導体レーザアレイ装置の外観斜視
図、第２図は同半導体レーザアレイ装置の要部の斜視
図、第３図は同半導体レーザアレイ装置における電流−
光出力特性図である。 １……一次元半導体レーザアレイ、２……絶縁板、３…
…絶縁スペーサ、４……二次元半導体レーザアレイ、５
……ヒートシンク。FIG. 1 is a perspective view of the appearance of a semiconductor laser array device of the present invention, FIG. 2 is a perspective view of a main part of the semiconductor laser array device, and FIG.
It is a light output characteristic view. 1 ... One-dimensional semiconductor laser array, 2 ... Insulation plate, 3 ...
… Insulating spacers, 4 …… Two-dimensional semiconductor laser array, 5
……heatsink.
Claims (1)
れてなる一次元半導体レーザアレイを、熱伝導性の良い
絶縁板の間に複数個層状に配置して二次元半導体レーザ
アレイを構成し、かつこの二次元半導体レーザアレイ
を、その絶縁板を介して放熱部材上に載置した半導体レ
ーザアレイ装置。1. A two-dimensional semiconductor laser array is formed by arranging a plurality of one-dimensional semiconductor laser arrays in which a plurality of laser light emitting points are arranged one-dimensionally between insulating plates having good thermal conductivity. A semiconductor laser array device in which the two-dimensional semiconductor laser array is placed on a heat dissipation member via the insulating plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1105205A JP2554741B2 (en) | 1989-04-24 | 1989-04-24 | Semiconductor laser array device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1105205A JP2554741B2 (en) | 1989-04-24 | 1989-04-24 | Semiconductor laser array device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02281782A JPH02281782A (en) | 1990-11-19 |
| JP2554741B2 true JP2554741B2 (en) | 1996-11-13 |
Family
ID=14401166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1105205A Expired - Lifetime JP2554741B2 (en) | 1989-04-24 | 1989-04-24 | Semiconductor laser array device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2554741B2 (en) |
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| US7170919B2 (en) | 2003-06-23 | 2007-01-30 | Northrop Grumman Corporation | Diode-pumped solid-state laser gain module |
| US7495848B2 (en) | 2003-07-24 | 2009-02-24 | Northrop Grumman Corporation | Cast laser optical bench |
| US7305016B2 (en) | 2005-03-10 | 2007-12-04 | Northrop Grumman Corporation | Laser diode package with an internal fluid cooling channel |
| CN101465516B (en) * | 2009-01-09 | 2010-12-01 | 西安炬光科技有限公司 | A kind of high-power semiconductor laser and its preparation method |
| US9590388B2 (en) | 2011-01-11 | 2017-03-07 | Northrop Grumman Systems Corp. | Microchannel cooler for a single laser diode emitter based system |
| US8937976B2 (en) | 2012-08-15 | 2015-01-20 | Northrop Grumman Systems Corp. | Tunable system for generating an optical pulse based on a double-pass semiconductor optical amplifier |
| JP6573451B2 (en) * | 2014-12-12 | 2019-09-11 | 浜松ホトニクス株式会社 | Semiconductor laser unit and semiconductor laser device |
| JP6576137B2 (en) * | 2015-07-21 | 2019-09-18 | 浜松ホトニクス株式会社 | Semiconductor laser device and manufacturing method of semiconductor laser device |
| CN105790071A (en) * | 2016-03-22 | 2016-07-20 | 西安炬光科技股份有限公司 | High-power semiconductor laser and preparation method thereof |
| CN105790062B (en) * | 2016-03-22 | 2019-02-26 | 西安炬光科技股份有限公司 | A kind of semiconductor laser based on anisotropic substrate |
| CN105790063B (en) * | 2016-03-22 | 2019-01-08 | 西安炬光科技股份有限公司 | A kind of substrate applied to semiconductor laser |
| EP4439172A3 (en) | 2017-12-10 | 2024-10-23 | Lumus Ltd. | Image projector |
| US20220360039A1 (en) * | 2019-09-30 | 2022-11-10 | Osram Opto Semiconductors Gmbh | Laser package and system with laser packages |
-
1989
- 1989-04-24 JP JP1105205A patent/JP2554741B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02281782A (en) | 1990-11-19 |
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