JP2580779B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JP2580779B2 JP2580779B2 JP1152565A JP15256589A JP2580779B2 JP 2580779 B2 JP2580779 B2 JP 2580779B2 JP 1152565 A JP1152565 A JP 1152565A JP 15256589 A JP15256589 A JP 15256589A JP 2580779 B2 JP2580779 B2 JP 2580779B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- semiconductor
- resin
- partition
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、底板および側壁よりなる容器の底板上に半
導体素体が支持され、その半導体素体を覆って容器内に
樹脂が充填される半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] In the present invention, a semiconductor body is supported on a bottom plate of a container having a bottom plate and side walls, and a resin is filled in the container so as to cover the semiconductor body. The present invention relates to a semiconductor device.
半導体素体を容器内に収容し、容器内に充填される樹
脂によって半導体素体を外気から遮断する半導体装置
は、特に複数の半導体素子を一つの容器に収容する、例
えばダイオードモジュール，トランジスタモジュール等
のモジュール装置に多く適用されている。2. Description of the Related Art A semiconductor device in which a semiconductor body is housed in a container and the semiconductor body is shielded from the outside air by a resin filled in the container, particularly, a plurality of semiconductor elements are housed in one container. Many are applied to the module device.
上記のような半導体装置の注型樹脂として多く用いら
れるエポキシ樹脂は60×10-6/℃の熱膨脹係数を有す
る。この熱膨脹係数は、例えばシリコンでは2.4×10-6/
℃である半導体の熱膨脹係数に比して著しく大きいた
め、温度変動の際の樹脂の収縮によって半導体素体にス
トレスが生ずるという問題がある。樹脂の熱膨脹係数は
樹脂中のフィラーを増加することにより低下させること
ができるが、それに伴い注型時の樹脂粘度が大きくなっ
てしまい、作業性が大幅に低下するので、樹脂の熱膨脹
形成低減によるストレス緩和には限界がある。別の方策
として、半導体素体を、例えばゲル状のシリコーンゴム
のようなバッファ剤で被覆する方法がある。しかし、こ
のようなバッファ剤は一般に熱膨脹係数が10-4/℃台で
あって非常に大きく、逆に半導体素体およびその周辺部
にストレスを与えてしまう場合がある。Epoxy resins often used as casting resins for semiconductor devices as described above have a thermal expansion coefficient of 60 × 10 −6 / ° C. This coefficient of thermal expansion is, for example, 2.4 × 10 -6 /
Since the coefficient of thermal expansion of the semiconductor is remarkably higher than that of the semiconductor, there is a problem that stress is generated in the semiconductor body due to shrinkage of the resin when the temperature changes. The coefficient of thermal expansion of the resin can be reduced by increasing the filler in the resin.However, the viscosity of the resin at the time of casting increases, and the workability is greatly reduced. There are limits to stress relief. As another measure, there is a method of coating the semiconductor element with a buffer agent such as a gel silicone rubber. However, such a buffering agent generally has a thermal expansion coefficient of the order of 10 −4 / ° C. and is very large, and may give a stress to the semiconductor element and its peripheral part.
本発明の目的は、温度変動時に半導体素体を外気から
遮断するためのエポキシ樹脂から半導体素体に温度サイ
クルの際にストレスが与えられないような半導体装置を
提供することにある。SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device in which stress is not applied to a semiconductor body from an epoxy resin for isolating the semiconductor body from the outside air at the time of temperature fluctuation during a temperature cycle.
上記の目的を達成するために、本発明は、底板および
側壁からなる容器の底板上に半導体素体が支持され、そ
の半導体素体を覆って容器内にエポキシ樹脂が充填され
る半導体装置において、半導体素体と容器側壁の間の半
導体素体近傍に設けられ、半導体素体を覆うエポキシ樹
脂と容器側壁側のエポキシ樹脂とを部分的に分断する隔
壁を有するものとする。In order to achieve the above object, the present invention provides a semiconductor device in which a semiconductor body is supported on a bottom plate of a container including a bottom plate and a side wall, and an epoxy resin is filled in the container so as to cover the semiconductor body. A partition is provided near the semiconductor element between the semiconductor element and the side wall of the container, and partially separates the epoxy resin covering the semiconductor element from the epoxy resin on the side wall of the container.
半導体近傍にある隔壁により、隔壁の半導体素体側に
ある樹脂の伸縮は、隔壁の外側にある樹脂の伸縮より切
り離されるため、半導体素体にストレスを与える樹脂の
量は少なくなり、ストレスが小さくなる。Due to the partition near the semiconductor, the expansion and contraction of the resin on the semiconductor element side of the partition is separated from the expansion and contraction of the resin outside the partition, so that the amount of resin that applies stress to the semiconductor element is reduced, and the stress is reduced. .
第１図（ａ），（ｂ）および第２図は本発明の一実施
例を示す。図において、６個の半導体素体１、例えばダ
イオードチップはそれぞれの下面電極が絶縁層３を介し
て容器底板２の上に固定された帯状接続導体４の上には
んだ５によって固着されている。接続導体４は一方の側
で立ち上げられ、外部接続端子41とされている。見やす
くするために図示しないが、各半導体素体１の上面電極
は他の外部接続端子と連結された接続導体と導線により
接続されている。ここまでは従来の半導体装置と同じで
ある。しかし、本発明により各接続導体４のそれらを囲
む容器側壁６に対向する側辺には高さ３〜5mm程度の金
属隔壁７が取り付けられている。金属隔壁７は接続導体
4,外部接続端子41と一体に金属板、例えば厚さ1mmの銅
板から作成され、外部接続端子と共に直角に折り曲げて
形成される。このように金属隔壁７が一体に作成されて
いると、金属隔壁７の取り付けのための別な工程が必要
でなく、また接続導体４等の部分的な剥離が生じても金
属隔壁７だけが分離してしまうということがないため、
半導体素体１を傷つけることがなく保護の点からしても
好ましい。また、半導体素体１が搭載される接続導体４
と一体なので、接続導体４自体の熱容量がおきくなり、
放熱性が向上し、半導体素体１の温度上昇が抑えられ
る。第２図はそのような接続導体の一つの斜視図であ
る。底板２および側壁６からなる容器の中には樹脂８が
充填されている。金属隔壁７に図のように直径１〜3mm
の穴71を明けておくと、樹脂８がその穴に入り込むの
で、樹脂を固定し、押さえる作用が生じ、底板２から樹
脂が剥離するのを防止する効果が現れる。1 (a), 1 (b) and 2 show an embodiment of the present invention. In the figure, six semiconductor element bodies 1, for example, diode chips, are fixed by solder 5 on a strip-shaped connection conductor 4 whose lower surface electrode is fixed on a container bottom plate 2 via an insulating layer 3. The connection conductor 4 is raised on one side and serves as an external connection terminal 41. Although not shown for the sake of clarity, the upper surface electrode of each semiconductor element 1 is connected to a connection conductor connected to another external connection terminal by a conductor. Up to this point, it is the same as the conventional semiconductor device. However, according to the present invention, a metal partition 7 having a height of about 3 to 5 mm is attached to a side of each connection conductor 4 facing the container side wall 6 surrounding them. The metal partition 7 is a connection conductor
4, It is made of a metal plate, for example, a copper plate having a thickness of 1 mm, integrally with the external connection terminal 41, and is formed by bending at a right angle together with the external connection terminal. When the metal partition 7 is integrally formed in this way, another step for attaching the metal partition 7 is not required, and even if partial separation of the connection conductor 4 or the like occurs, only the metal partition 7 is formed. Because there is no separation
It is preferable from the viewpoint of protection without damaging the semiconductor body 1. The connection conductor 4 on which the semiconductor body 1 is mounted
Because it is integral with, the heat capacity of the connection conductor 4 itself increases,
The heat dissipation is improved, and the temperature rise of the semiconductor body 1 is suppressed. FIG. 2 is a perspective view of one such connection conductor. The container 8 composed of the bottom plate 2 and the side wall 6 is filled with a resin 8. The diameter of the metal partition 7 is 1-3mm as shown
When the hole 71 is formed, the resin 8 enters the hole, so that an action of fixing and pressing the resin occurs, and an effect of preventing the resin from peeling off from the bottom plate 2 appears.
なお、コストの上昇を招くが、各半導体素体をそれぞ
れ隔壁で囲む方がストレス緩和の効果が上がることはも
ちろんである。また、隔壁を接続導体と別個に作成し、
接続導体あるいは基板にろう付け，接着等で結合しても
よい。その場合は、隔壁の材料としては金属以外のもの
を用いることができる。ただし、その材料の熱膨脹係数
は注型樹脂のそれより小さいことが必要である。Although the cost is increased, it is a matter of course that enclosing each semiconductor element with a partition increases the effect of reducing stress. In addition, the partition is created separately from the connection conductor,
It may be connected to the connection conductor or the substrate by brazing, bonding or the like. In that case, a material other than metal can be used as the material of the partition. However, the thermal expansion coefficient of the material must be smaller than that of the casting resin.
本発明によれば、半導体素体の近傍に容器側壁に対す
る隔壁を設けることにより、温度変動時に容器内に充填
されるエポキシ樹脂から半導体素体に与えられるストレ
スが緩和されるので、温度サイクルによる半導体素子の
劣化が大幅に減少し、半導体装置の寿命を伸ばすことが
できる。また、組立作業中においても、半導体素体に他
の部品等が接触して欠けや亀裂の発生によって不良とな
る危険性が減少するため、良品率が向上するという効果
も生ずる。According to the present invention, by providing the partition against the container side wall in the vicinity of the semiconductor element, the stress applied to the semiconductor element from the epoxy resin filled in the container when the temperature fluctuates is alleviated. Element deterioration is significantly reduced, and the life of the semiconductor device can be extended. In addition, even during the assembling operation, the risk of failure due to the occurrence of chipping or cracking due to the contact of the semiconductor element with other components or the like is reduced, so that the effect of improving the yield rate is also increased.
第１図（ａ），（ｂ）は本発明の一実施例を示し、
（ａ）は平面透視図，（ｂ）は破砕断面図、第２図は第
１図に用いられた接続導体の斜視図である。 1:半導体素体、2:容器底板、4:接続導体、6:容器側壁、
7:金属隔壁、8:樹脂。FIGS. 1A and 1B show an embodiment of the present invention.
(A) is a perspective plan view, (b) is a crushed sectional view, and FIG. 2 is a perspective view of a connection conductor used in FIG. 1: Semiconductor body, 2: Container bottom plate, 4: Connection conductor, 6: Container side wall,
7: metal partition, 8: resin.
Claims (1)
導体素体が支持され、その半導体素体を覆って容器内に
エポキシ樹脂が充填されるものにおいて、半導体素体と
容器側壁の間の半導体素体近傍に設けられ、半導体素体
を覆うエポキシ樹脂と容器側壁側のエポキシ樹脂とを部
分的に分断する隔壁を有することを特徴とする半導体装
置。A semiconductor element is supported on a bottom plate of a container comprising a bottom plate and a side wall, and an epoxy resin is filled in the container so as to cover the semiconductor element. A semiconductor device having a partition provided near a semiconductor body and partially separating an epoxy resin covering the semiconductor body and an epoxy resin on a side wall of the container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1152565A JP2580779B2 (en) | 1989-06-15 | 1989-06-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1152565A JP2580779B2 (en) | 1989-06-15 | 1989-06-15 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0318047A JPH0318047A (en) | 1991-01-25 |
| JP2580779B2 true JP2580779B2 (en) | 1997-02-12 |
Family
ID=15543263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1152565A Expired - Lifetime JP2580779B2 (en) | 1989-06-15 | 1989-06-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2580779B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2973792B2 (en) * | 1993-09-21 | 1999-11-08 | 富士電機株式会社 | Resin-sealed semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6087070A (en) * | 1983-10-20 | 1985-05-16 | Seikosha Co Ltd | Supporting device for printing head |
-
1989
- 1989-06-15 JP JP1152565A patent/JP2580779B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0318047A (en) | 1991-01-25 |
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