JP2595566B2 - Charged particle beam exposure system - Google Patents
Charged particle beam exposure systemInfo
- Publication number
- JP2595566B2 JP2595566B2 JP62268530A JP26853087A JP2595566B2 JP 2595566 B2 JP2595566 B2 JP 2595566B2 JP 62268530 A JP62268530 A JP 62268530A JP 26853087 A JP26853087 A JP 26853087A JP 2595566 B2 JP2595566 B2 JP 2595566B2
- Authority
- JP
- Japan
- Prior art keywords
- charged particle
- thin film
- particle beam
- charge
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Electron Beam Exposure (AREA)
Description
【発明の詳細な説明】 〔概 要〕 荷電粒子ビームの正確な描画を可能にする荷電粒子ビ
ーム露光装置の改良に関し、 レジスト膜上に蓄積された荷電粒子の電荷の影響を受
けることなく、正確なパターニングが可能な荷電粒子ビ
ーム露光装置の提供を目的とし、 露光領域に相当する開口と位置決め用孔とを有する導
体薄膜と、該導体薄膜の移動機構と、該導体薄膜の位置
検出センサとを有するチャージシールド装置を具備する
よう構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to an improvement of a charged particle beam exposure apparatus that enables accurate drawing of a charged particle beam, and is capable of accurately measuring a charged particle beam without being affected by charges of the charged particles accumulated on a resist film. The purpose of the present invention is to provide a charged particle beam exposure apparatus capable of performing various patterning, a conductive thin film having an opening corresponding to an exposure area and a positioning hole, a moving mechanism of the conductive thin film, and a position detecting sensor of the conductive thin film. And a charge shield device.
本発明は、荷電粒子ビーム露光装置に係り、特に荷電
粒子ビームの正確な描画を可能にする荷電粒子ビーム露
光装置の改良に関するものである。The present invention relates to a charged particle beam exposure apparatus, and more particularly to an improvement in a charged particle beam exposure apparatus that enables accurate drawing of a charged particle beam.
荷電粒子ビーム露光装置によってレジスト膜上に所望
のパターニングを行う場合に、絶縁物よりなるレジスト
膜に荷電粒子の電荷が蓄積され、そのために発生するチ
ャージアップによる斥力により、荷電粒子ビームの軌道
が所望の位置からずれるという問題が生じている。When a desired patterning is performed on a resist film by a charged particle beam exposure apparatus, charges of the charged particles are accumulated in the resist film made of an insulator, and a repulsive force due to charge-up generated thereby causes a desired trajectory of the charged particle beam. Problem has arisen.
以上のような状況から荷電粒子ビームの軌道が、所望
の位置からずれるのを防止することが可能な荷電粒子ビ
ーム露光装置が要望されている。Under the circumstances described above, there is a demand for a charged particle beam exposure apparatus that can prevent the trajectory of the charged particle beam from deviating from a desired position.
従来の荷電粒子ビーム露光装置、例えば電子ビーム露
光装置においては第2図に示すように、電子ビーム発生
源から照射された電子ビームは、レジスト膜12上の所望
の位置において、ビーム偏向コイル13や対物レンズコイ
ル14により一定の領域の範囲内を走査するようになって
いる。As shown in FIG. 2, in a conventional charged particle beam exposure apparatus, for example, an electron beam exposure apparatus, an electron beam irradiated from an electron beam source is irradiated with a beam deflection coil 13 or a beam deflection coil 13 at a desired position on a resist film 12. The objective lens coil 14 scans within a certain area.
しかしながら、電子ビームがパターンを描画するレジ
スト膜12が絶縁物のため、照射された電子ビームの電荷
がレジスト膜12上に蓄積される。However, since the resist film 12 on which the electron beam draws a pattern is an insulator, charges of the irradiated electron beam are accumulated on the resist film 12.
このレジスト膜12上に蓄積された電子ビームの電荷
は、レジスト膜12の下の金属膜、例えば遮光パターン11
bを通して逃がすようにしてもある程度の電荷はレジス
ト膜12に蓄積されることになる。The charge of the electron beam accumulated on the resist film 12 is transferred to a metal film below the resist film 12, for example, the light-shielding pattern 11.
Even if the charge is released through b, a certain amount of charge is accumulated in the resist film 12.
特に第2図に示すように対物レンズコイル14の開口部
の寸法が大きい場合には、上記のレジスト膜12上に蓄積
された電子の電荷の影響を大きく受けて、電子ビームが
レジスト膜12上に照射される位置が設定された位置から
ずれることがある。In particular, as shown in FIG. 2, when the size of the opening of the objective lens coil 14 is large, the electron beam is greatly affected by the electric charge of the electrons accumulated on the resist film 12 and May be shifted from the set position.
以上説明の従来の荷電粒子ビーム露光装置で問題とな
るのは、レジスト膜上に蓄積された荷電粒子の電荷と荷
電粒子ビームとの極性が同一のため、荷電粒子ビームが
上記の荷電粒子の電荷により斥力を受け、レジスト膜上
に照射される荷電粒子ビームの位置が設定された位置か
らずれることである。The problem with the conventional charged particle beam exposure apparatus described above is that the charged particle beam has the same polarity as the charged particle beam because the polarity of the charged particle beam and the charged particle beam accumulated on the resist film are the same. And the position of the charged particle beam irradiated on the resist film deviates from the set position.
本発明は以上のような状況から、レジスト膜上に蓄積
された荷電粒子の電荷の影響を受けることなく、正確な
パターニングが可能な荷電粒子ビーム露光装置の提供を
目的としたものである。An object of the present invention is to provide a charged particle beam exposure apparatus capable of performing accurate patterning without being affected by the charge of charged particles accumulated on a resist film.
上記問題点は、露光領域に相当する複数の開口と該そ
れぞれの開口に対応する複数の位置決め用孔とが連続し
て設けられたチャージシールド用導体薄膜と、前記チャ
ージシールド用導体薄膜の開口を含む所定の部分を試料
面に近接させる移動機構と、前記移動機構によって前記
チャージシールド用導体薄膜の所定の部分が前記試料面
に近接した状態で前記位置決め用孔を検出する位置検出
センサと、前記チャージシールド用導体薄膜の複数の開
口が前記露光領域に順次位置合わせされるように該チャ
ージシールド用導体薄膜を巻き取る機構とを設けた荷電
粒子ビーム露光装置によって解決される。The above problem is caused by a charge shielding conductor thin film in which a plurality of openings corresponding to an exposure region and a plurality of positioning holes corresponding to the respective openings are continuously provided, and an opening of the charge shield conductor thin film. A movement mechanism for bringing a predetermined portion including the predetermined portion close to the sample surface, a position detection sensor for detecting the positioning hole in a state where the predetermined portion of the charge shield conductor thin film is close to the sample surface by the movement mechanism, and The problem is solved by a charged particle beam exposure apparatus provided with a mechanism for winding up the charge shield conductive thin film so that the plurality of openings of the charge shield conductive thin film are sequentially aligned with the exposure area.
〔作用〕 即ち本発明においては、荷電粒子ビーム露光装置の対
物レンズコイルの開口部の寸法よりも小さい荷電粒子ビ
ームの偏向領域に相当する偏向用開口と、位置決め用孔
を有する金属薄膜と、この金属薄膜を露光時の位置と乾
板の挿入時の位置との間を上下移動させる機構と、露光
時の位置におけるこの金属薄膜の位置検出センサと、を
有するチャージシールド装置を具備するから、レジスト
膜上に蓄積された電荷の影響を上記の金属薄膜により遮
断し得るのでこの電荷による荷電粒子ビームの照射位置
のずれを防止でき、レジスト膜上の正確なパターニング
が可能となる。[Operation] That is, in the present invention, a metal thin film having a deflection opening corresponding to a deflection region of a charged particle beam smaller than the size of an opening of an objective lens coil of a charged particle beam exposure apparatus, a metal thin film having a positioning hole, and A charge shield device having a mechanism for moving the metal thin film up and down between the position at the time of exposure and the position at the time of insertion of the dry plate, and a sensor for detecting the position of the metal thin film at the position at the time of exposure is provided. Since the influence of the electric charge accumulated thereon can be blocked by the above-mentioned metal thin film, a shift of the irradiation position of the charged particle beam due to the electric charge can be prevented, and accurate patterning on the resist film can be performed.
以下第1図によって本発明の一実施例を電子ビーム露
光装置の場合について説明する。FIG. 1 shows an embodiment of the present invention in the case of an electron beam exposure apparatus.
電子ビーム露光装置のビーム偏向コイル3や対物レン
ズコイル4等を含むコラム部とチャージシールド装置及
び遮光パターン1bを有する透明基板1aの概略を第1図に
示す。FIG. 1 schematically shows a column section including a beam deflection coil 3 and an objective lens coil 4 of an electron beam exposure apparatus, a charge shield apparatus, and a transparent substrate 1a having a light shielding pattern 1b.
第1図(a)に示す側面図において、ビーム偏向コイ
ル3の中を通過して照射される電子ビームは、ビーム偏
向コイル3及び対物レンズコイル4により、遮光パター
ン1bの上に形成したレジスト膜2の表面に所望のパター
ンを描画するようになっている。In the side view shown in FIG. 1 (a), an electron beam irradiated through the beam deflection coil 3 is irradiated with a resist film formed on the light shielding pattern 1b by the beam deflection coil 3 and the objective lens coil 4. 2 is designed to draw a desired pattern on the surface.
チャージシールド装置は、レジスト膜2に蓄積された
電子の電荷により生じる斥力の影響を防止するために、
膜厚0.02〜0.05mmの銅よりなる金属薄膜5を図示のプー
リー軸8の上の位置から図示のレジスト膜2に近接した
位置に押し下げる可動シャフト6と、この可動シャフト
6が結合されているプーリー軸8及びプーリー7とから
なり、可動シャフト6の上下は、駆動ベルト9によりプ
ーリー7を回転して行っている。The charge shield device is provided to prevent the influence of repulsion caused by the electric charge of the electrons accumulated in the resist film 2.
A movable shaft 6 for pushing down a metal thin film 5 made of copper having a thickness of 0.02 to 0.05 mm from a position above the illustrated pulley shaft 8 to a position close to the illustrated resist film 2, and a pulley to which the movable shaft 6 is coupled It comprises a shaft 8 and a pulley 7. The pulley 7 is rotated above and below the movable shaft 6 by a drive belt 9.
金属薄膜5は第1図(b)の平面図に示すように、電
子ビームがレジスト膜2上の描画する偏向領域に相当す
る偏向用開口5aと位置決め用孔5bとを備えており、金属
薄膜5を可動シャフト6により押し下げた場合に生じる
偏向用開口5aの位置ずれを、金属薄膜5にテンションを
与えている図示しないテンション機構により、センサ10
の位置に位置決め用孔5bを一致させることにより修正し
ている。As shown in the plan view of FIG. 1 (b), the metal thin film 5 has a deflection opening 5a and a positioning hole 5b corresponding to a deflection region where an electron beam is drawn on the resist film 2, and the metal thin film 5 The displacement of the deflecting opening 5a caused when the movable shaft 6 is pressed down by the movable shaft 6 is used to detect the displacement of the sensor 10 by a tension mechanism (not shown) that applies tension to the metal thin film 5.
The position is corrected by matching the positioning hole 5b to the position.
このようなチャージシールド装置において、遮光パタ
ーン1bを有する透明基板1aの挿入,取り外しの際には金
属薄膜5をプーリー軸8の上に位置させておき、電子ビ
ームの照射時にはチャージシールド装置により金属薄膜
5をレジスト膜2に近接させることが可能となるので、
電子ビームの照射によりレジスト膜2に蓄積された電子
の荷電による斥力を金属薄膜5により防止することが可
能となる。In such a charge shield device, the metal thin film 5 is positioned on the pulley shaft 8 when the transparent substrate 1a having the light shielding pattern 1b is inserted or removed, and when the electron beam is irradiated, the metal thin film 5 is set by the charge shield device. 5 can be brought close to the resist film 2,
The metal thin film 5 can prevent the repulsive force due to the charge of the electrons accumulated in the resist film 2 by the irradiation of the electron beam.
なお、この金属薄膜5に複数の偏向用開口5aと位置決
め用孔5bとを設け、複数回の使用毎に上記のテンション
機構により一ピッチ分を巻き取り、電子ビームの照射を
継続して行うことが可能である。The metal thin film 5 is provided with a plurality of deflecting openings 5a and positioning holes 5b, and is wound by one pitch by the above-mentioned tension mechanism for each use plural times, so that the electron beam irradiation is continuously performed. Is possible.
以上の説明から明らかなように本発明によれば、簡単
な構造のチャージシールド装置を荷電粒子ビーム露光装
置の設けることにより、レジスト膜上に蓄積された電荷
による荷電粒子ビームの照射位置のずれを防止すること
が可能となり、レジスト膜上の正確なパターニングが可
能となる等の利点があり、著しい信頼性向上の効果が期
待でき工業的には極めて有用なものである。As is clear from the above description, according to the present invention, by providing a charge shield device having a simple structure in the charged particle beam exposure device, the displacement of the irradiation position of the charged particle beam due to the electric charge accumulated on the resist film can be reduced. This has the advantage that it can be prevented and that accurate patterning on the resist film can be achieved. The effect of remarkable improvement in reliability can be expected, and this is extremely useful industrially.
第1図は本発明による一実施例を示す図、 第2図は従来の電子ビーム露光装置を示す側面概要図、 である。 図において、 1aは透明基板、 1bは遮光パターン、 2はレジスト膜、 3はビーム偏向コイル、 4は対物レンズコイル、 5は金属薄膜、 5aは偏向用開口、 5bは位置決め用孔、 6は可動シャフト、 7はプーリー、 8はプーリー軸、 9は駆動ベルト、 10はセンサ、 を示す。 FIG. 1 is a view showing an embodiment according to the present invention, and FIG. 2 is a schematic side view showing a conventional electron beam exposure apparatus. In the figure, 1a is a transparent substrate, 1b is a light shielding pattern, 2 is a resist film, 3 is a beam deflection coil, 4 is an objective lens coil, 5 is a metal thin film, 5a is a deflection opening, 5b is a positioning hole, and 6 is movable. 7 denotes a pulley, 8 denotes a pulley shaft, 9 denotes a drive belt, and 10 denotes a sensor.
Claims (1)
それぞれの開口に対応する複数の位置決め用孔(5b)と
が連続して設けられたチャージシールド用導体薄膜
(5)と、 前記チャージシールド用導体薄膜の開口を含む所定の部
分を試料面に近接させる移動機構(6〜9)と、 前記移動機構によって前記チャージシールド用導体薄膜
の所定の部分が前記試料面に近接した状態で前記位置決
め用孔を検出する位置検出センサ(10)と、 前記チャージシールド用導体薄膜の複数の開口が前記露
光領域に順次位置合わせされるように該チャージシール
ド用導体薄膜を巻き取る機構と を設けたことを特徴とする荷電粒子ビーム露光装置。1. A charge shield conductive thin film (5) provided with a plurality of openings (5a) corresponding to an exposure area and a plurality of positioning holes (5b) corresponding to the respective openings. A moving mechanism (6 to 9) for bringing a predetermined portion including an opening of the charge shield conductive thin film close to the sample surface; A position detection sensor (10) for detecting the positioning hole, and a mechanism for winding up the charge shield conductor thin film so that the plurality of openings of the charge shield conductor thin film are sequentially aligned with the exposure area. A charged particle beam exposure apparatus, comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268530A JP2595566B2 (en) | 1987-10-23 | 1987-10-23 | Charged particle beam exposure system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62268530A JP2595566B2 (en) | 1987-10-23 | 1987-10-23 | Charged particle beam exposure system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01110729A JPH01110729A (en) | 1989-04-27 |
| JP2595566B2 true JP2595566B2 (en) | 1997-04-02 |
Family
ID=17459796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62268530A Expired - Lifetime JP2595566B2 (en) | 1987-10-23 | 1987-10-23 | Charged particle beam exposure system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2595566B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6590518B2 (en) * | 2015-05-13 | 2019-10-16 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing apparatus and charged particle beam drawing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6258620A (en) * | 1985-09-09 | 1987-03-14 | Nippon Telegr & Teleph Corp <Ntt> | Charged beam device |
-
1987
- 1987-10-23 JP JP62268530A patent/JP2595566B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01110729A (en) | 1989-04-27 |
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