JP2674869B2 - Jig for evaluating the characteristics of microwave semiconductor devices - Google Patents
Jig for evaluating the characteristics of microwave semiconductor devicesInfo
- Publication number
- JP2674869B2 JP2674869B2 JP2264197A JP26419790A JP2674869B2 JP 2674869 B2 JP2674869 B2 JP 2674869B2 JP 2264197 A JP2264197 A JP 2264197A JP 26419790 A JP26419790 A JP 26419790A JP 2674869 B2 JP2674869 B2 JP 2674869B2
- Authority
- JP
- Japan
- Prior art keywords
- jig
- semiconductor element
- output side
- container
- input side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000011156 evaluation Methods 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はマイクロ波半導体素子の特性評価用治具に関
し、特にマイクロ波帯用FETの特性評価用治具に関す
る。The present invention relates to a jig for characteristic evaluation of a microwave semiconductor element, and more particularly to a jig for characteristic evaluation of a microwave band FET.
第５図は従来使用されてきたストリップライン型高周
波特性評価用治具に高周波用トランジスタを実装した場
合の平面図であり、第６図はそのＣ−Ｃ断面図である。FIG. 5 is a plan view when a high frequency transistor is mounted on a conventionally used jig for stripline type high frequency characteristic evaluation, and FIG. 6 is a sectional view taken along the line CC.
銅などの放熱性及び導電性の良い金属に、ニッケル又
は金めっきなどを施してある治具台20には、上面中央部
を半導体素子用容器７の幅に合わせて切削溝が設けてあ
り、切削部には半導体素子用容器７がねじ止めにて治具
台20に固定してある。半導体素子用容器７は、例えば銅
製の放熱板３、及び半導体素子が内部に設置されている
例えば銅製の容器部４、及び高周波入力を受ける入力側
リード端子５、及び半導体素子により増幅された高周波
を出力する出力側リード端子６で構成されており、ねじ
にて放熱板３が治具台20に固定されている。A jig table 20 made of nickel or gold plated on a metal having good heat dissipation and conductivity such as copper is provided with a cutting groove so that the central portion of the upper surface is aligned with the width of the semiconductor element container 7. The semiconductor element container 7 is fixed to the jig base 20 by screwing at the cutting portion. The semiconductor element container 7 includes, for example, a copper heat dissipation plate 3, a semiconductor element installed inside thereof, for example, a copper container 4, an input side lead terminal 5 for receiving a high frequency input, and a high frequency amplified by the semiconductor element. The output side lead terminal 6 outputs the heat radiation plate 3 and is fixed to the jig base 20 with a screw.
また、治具台20上で入力側リード端子５側及び出力側
リード端子６側には、四フッ化エチレン、グラファイト
などの誘電体基板上に金めっきなどで回路を形成した入
力側ストリップライン10、及び出力側ストリップライン
11が銀ペーストなどで治具台20上にろう付けされてお
り、入力側リード端子５は入力側ストリップライン10
へ、また、出力側リード端子６は出力側ストリップライ
ン11へ接触させることにより電気的に接続されている。
また、入力側ストリップライン10にはSMA型などの高周
波用コネクタ12が、同様に出力側ストリップライン11に
は高周波用コネクタ13が半田付けされている。Further, on the input side lead terminal 5 side and the output side lead terminal 6 side on the jig base 20, an input side strip line 10 in which a circuit is formed by gold plating or the like on a dielectric substrate such as tetrafluoroethylene or graphite. And output side stripline
11 is brazed on the jig base 20 with silver paste or the like, and the input side lead terminal 5 is the input side stripline 10
, And the output side lead terminal 6 is electrically connected to the output side strip line 11 by being brought into contact therewith.
Further, a high frequency connector 12 such as an SMA type is soldered to the input side strip line 10, and a high frequency connector 13 is similarly soldered to the output side strip line 11.
治具外部からの高周波電力は高周波用コネクタ12より
入り、入力側ストリップライン10をへて半導体素子用容
器７にて増幅され、出力側ストリップライン11を通り、
高周波用コネクト13より治具外へ伝送される。High frequency power from the outside of the jig enters from the high frequency connector 12, is amplified in the semiconductor element container 7 via the input side strip line 10, passes through the output side strip line 11,
It is transmitted from the high frequency connect 13 to the outside of the jig.
上述した従来のストリップ・ライン型高周波特性評価
用治具は、治具台に半導体素子用容器の寸法に合わせて
切削溝を形成し、そこに半導体素子用容器を搭載してい
る。半導体素子用容器が確実に搭載出来る様にする為
に、切削部は半導体素子用容器の設計上許される最大幅
に合わせ、かつ切削精度を考慮して更に余裕をとった治
具設計となっている為、半導体素子容器を搭載した場
合、半導体素子用容器の放熱板と治具の入力側ストリッ
プラインとの間や、半導体素子用容器の放熱板と治具の
出力側のストリップラインとの間に隙間が出来、かつ、
その隙間の幅は治具の出来具合や半導体素子用容器の搭
載位置により異なる。In the conventional strip line type high frequency characteristic evaluation jig described above, a cutting groove is formed on the jig base in accordance with the dimensions of the semiconductor element container, and the semiconductor element container is mounted therein. In order to ensure that the semiconductor device container can be mounted securely, the cutting part is designed to match the maximum width allowed in the design of the semiconductor device container, and a jig design with more margin in consideration of cutting accuracy. Therefore, when a semiconductor element container is mounted, between the heat sink plate of the semiconductor element container and the input side strip line of the jig, or between the heat sink plate of the semiconductor element container and the output side strip line of the jig. There is a gap in the
The width of the gap depends on the quality of the jig and the mounting position of the semiconductor element container.
そもそも、治具のストリップラインは、特性インピー
ダンスが50Ωとなるように設計されており、また、スト
リップラインと半導体素子用容器は特性インピーダンス
50Ωで接続されることにより、始めて電力反射により電
力損失や周波数特性の狭帯域化なく高周波電力伝送が行
えるが、これはストリップラインと半導体素子容器の間
の隙間が全くない場合のみ実現され、隙間があると、隙
間の橋渡しをしているリード電極端子部分で高い特性イ
ンピーダンスを持つようになり、電力損失や周波数特性
の狭帯域化が起る。従って、隙間は狭い程広帯域特性を
得ることが出来、また隙間の幅が変化すると、そのたび
に電力反射の大きさが変わり高周波特性が変化する。In the first place, the strip line of the jig is designed to have a characteristic impedance of 50Ω, and the strip line and the container for semiconductor elements have a characteristic impedance.
By connecting with 50 Ω, high frequency power transmission can be performed for the first time without power loss due to power reflection and narrowing of frequency characteristics, but this is realized only when there is no gap between the strip line and the semiconductor element container. If so, the lead electrode terminal portion bridging the gap has a high characteristic impedance, resulting in power loss and narrowing of the frequency characteristic band. Therefore, the narrower the gap, the wider the band characteristic can be obtained, and when the width of the gap changes, the magnitude of the power reflection changes and the high-frequency characteristic changes.
この理由により、現状の治具では治具の出来具合によ
り、同一製品を測定した場合でも治具間で特性が異な
り、また同一の治具でも治具上の搭載位置が変るたびに
特性が変化することになり、製品の正しい特性評価が出
来ないことになる。For this reason, the current jigs have different characteristics depending on how well the jigs are made, even when measuring the same product, and the characteristics change even when the mounting position on the jig changes even with the same jig. As a result, correct characteristic evaluation of the product cannot be performed.
上述した入力側と出力側が一体となった従来の高周波
特性評価用治具に対し、本発明は治具台を入力側治具合
と出力側治具台と放熱台とに三分割し、入力側治具台と
出力側治具台にて、半導体素子用容器をはさみ込んで治
具台と半導体素子用容器との隙間を等間隔にし、かつ放
熱台についている板ばねによって接地するという相違点
を有する。In contrast to the conventional jig for high-frequency characteristic evaluation in which the input side and the output side are integrated as described above, the present invention divides the jig base into an input side jig base, an output side jig base, and a heat dissipation base. The difference is that the semiconductor element container is sandwiched between the jig base and the output side jig base to make the gap between the jig base and the semiconductor element container equidistant, and ground by the leaf spring attached to the heat dissipation base. Have.
本発明は治具を入力側治具台と出力側治具台と放熱台
とに三分割し、入力側治具台と出力側治具台で半導体素
子用容器をはさみ込み、なおかつ放熱台にて固定し、接
地する構造となっている。According to the present invention, a jig is divided into an input side jig stand, an output side jig stand, and a heat sink stand, and a semiconductor element container is sandwiched between the input side jig stand and the output side jig stand, and the heat sink stand is used. It is fixed and grounded.
この構造をとることにより、治具と半導体素子用容器
の位置関係は常に一定となり、一つの半導体素子を一台
の治具にて繰り返し測定した場合でも、複数の治具にて
一つの半導体素子を特性評価した場合でも再現性よくデ
ータを採取することが出来る。また治具と半導体素子用
容器との隙間も、側面は放熱台に取り付けられている板
ばねにより一定であり、下面も放熱台との隙間はない
為、特性インピーダンスが50Ωに近い状態で接続出来る
ことになり、治具の出力端から見た半導体素子の帯域特
性も広帯域化出来る。By adopting this structure, the positional relationship between the jig and the semiconductor element container is always constant, and even if one semiconductor element is repeatedly measured by one jig, one semiconductor element by multiple jigs Data can be collected with good reproducibility even when the characteristics are evaluated. In addition, the gap between the jig and the semiconductor element container is constant because the side surface is fixed by the leaf spring attached to the heat sink, and there is no gap between the lower surface and the heat sink, so the characteristic impedance can be connected in a state close to 50Ω. Therefore, the band characteristic of the semiconductor element viewed from the output end of the jig can be broadened.
第１図は本発明の第１の実施例に高周波用半導体素子
を実装した状態を示す平面図であり、第２図はそのＡ−
Ａ断面図である。FIG. 1 is a plan view showing a state in which a high frequency semiconductor device is mounted on the first embodiment of the present invention, and FIG.
It is A sectional drawing.
入力側治具台１と出力側治具台２との間に、放熱板3,
容器部4,入力側リード端子5,出力側リード端子６で構成
された半導体素子用容器７が、治具台1,2により両側か
らはさまれる形になり、治具台1,2と放熱板３との隙間
は、放熱台８に取り付けた板ばね９により等間隔とな
り、かつ接地されている。また、入力側リード端子５は
入力側ストリップライン10へ接触により電気的に接続さ
れ、また、出力側リード端子６も出力側ストリップライ
ン11へ同様に接続されている。Between the input side jig stand 1 and the output side jig stand 2, a heat sink 3,
The semiconductor element container 7 composed of the container part 4, the input side lead terminal 5, and the output side lead terminal 6 is sandwiched by the jig bases 1 and 2 from both sides, and the heat is radiated from the jig bases 1 and 2. The gaps between the plate 3 and the plate 3 are equidistant by the plate springs 9 attached to the heat sink 8 and are grounded. The input side lead terminal 5 is electrically connected to the input side strip line 10 by contact, and the output side lead terminal 6 is similarly connected to the output side strip line 11.
入力側ストリップライン10は治具の側壁越しに高周波
用コネクタ12に半田付けされており、出力側ストリップ
ライン11も同様に高周波用コネクタ13に半田付けされて
いる。入力側治具台１と出力側治具台２は貫通棒14に連
結され、この貫通棒14は一端が入力側治具台１に固定さ
れ、他端側には出力側治具台２がはめ込まれて可動する
ようになっている。貫通棒14の出力側治具台２からはみ
出した部分にはねじが切られていて、位置調整ねじ15に
より、出力側治具台２を水平方向に自在に動かすことも
出来る。The input side stripline 10 is soldered to the high frequency connector 12 through the side wall of the jig, and the output side stripline 11 is also soldered to the high frequency connector 13. The input side jig stand 1 and the output side jig stand 2 are connected to a penetrating rod 14. One end of this penetrating rod 14 is fixed to the input side jig stand 1 and the output side jig stand 2 is on the other end side. It is fitted and movable. The portion of the penetrating rod 14 protruding from the output side jig base 2 is threaded, and the position side adjusting screw 15 allows the output side jig base 2 to be freely moved in the horizontal direction.
放熱台８は入力側治具台１と貫通棒16によって連結さ
れていて、放熱台位置調整ねじ17を動かすことによって
貫通棒16に固定されているギア18が回転し、放熱台８を
上下方向に自在に動かすことが出来る。The heat sink 8 is connected to the input side jig stand 1 by the penetrating rod 16, and the gear 18 fixed to the penetrating rod 16 is rotated by moving the heat sink position adjusting screw 17 to move the heat sink 8 vertically. You can move it freely.
第３図は本発明の第２の実施例に高周波用半導体素子
を実装した状態を示す平面図であり、第４図はそのＢ−
Ｂ断面図である。本実施例は第１の実施例に対し、位置
調整ねじ19を設けた点が異なるだけで、その他の構造は
同じであるので、同じ部分の説明は省略する。FIG. 3 is a plan view showing a state in which a high frequency semiconductor device is mounted on the second embodiment of the present invention, and FIG.
It is B sectional drawing. The present embodiment is different from the first embodiment only in that a position adjusting screw 19 is provided, and other structures are the same, so the description of the same parts will be omitted.
すなわち、本実施例は、貫通棒14の出力側治具第２か
らはみだした部分にねじが切られていて、ある一定以上
の力が加わると空回りする様な仕組みの位置調整ねじ19
がついており、入出力側治具台1,2と半導体素子用容器
７との隙間を一定にすることが出来る。That is, in the present embodiment, the position adjusting screw 19 has a mechanism in which the portion of the penetrating rod 14 that protrudes from the output-side jig second is threaded, and is idled when a force above a certain level is applied.
Is attached, and the gap between the input / output side jig bases 1 and 2 and the semiconductor element container 7 can be made constant.
以上説明した様に本発明は、入力側治具台と出力側治
具台とで半導体素子用容器をはさみ込むことにより、製
品と治具との間の隙間の幅が等間隔になり、かつ放熱台
を上下させることにより治具台と半導体素子用容器の相
対的な位置関係を一定にすることが可能となり、これに
より半導体素子高周波特性の再現性及び同一仕様の治具
間の高周波特性の相関を向上させることができる。As described above, according to the present invention, by sandwiching the semiconductor element container with the input side jig stand and the output side jig stand, the width of the gap between the product and the jig becomes equal, and By moving the heat sink up and down, the relative positional relationship between the jig table and the semiconductor element container can be made constant, which allows the reproducibility of the high frequency characteristics of the semiconductor element and the high frequency characteristics between jigs with the same specifications. Correlation can be improved.
【図面の簡単な説明】 第１図は本発明の第１の実施例の平面図、第２図は第１
図のＡ−Ａ線断面図、第３図は本発明の第２の実施例の
平面図、第４図は第３図のＢ−Ｂ線断面図、第５図は従
来の治具の平面図、第６図は第５図のＣ−Ｃ線断面図で
ある。 １……入力側治具台、２……出力側治具台、３……放熱
板、４……容器部、５……入力側リード端子、６……出
力側リード端子、７……半導体素子用容器、８……放熱
台、９……板ばね、10……入力側ストリップライン、11
……出力側ストリップライン、12……高周波用コネク
タ、13……高周波用コネクタ、14……貫通棒、15……位
置調整ねじ、16……貫通棒、17……放熱台位置調整ね
じ、18……ギア、19……位置調整ねじ、20……治具台。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of a first embodiment of the present invention, and FIG.
Fig. 3 is a sectional view taken along the line AA in Fig. 3, Fig. 3 is a plan view of the second embodiment of the present invention, Fig. 4 is a sectional view taken along the line BB in Fig. 3, and Fig. 5 is a plan view of a conventional jig. 6 and 6 are sectional views taken along the line CC of FIG. 1 ... Input side jig stand, 2 ... Output side jig stand, 3 ... Heat sink, 4 ... Container part, 5 ... Input side lead terminal, 6 ... Output side lead terminal, 7 ... Semiconductor Element container, 8 ... Heat sink, 9 ... Leaf spring, 10 ... Input side strip line, 11
...... Output side strip line, 12 …… High frequency connector, 13 …… High frequency connector, 14 …… Penetration rod, 15 …… Position adjustment screw, 16 …… Penetration rod, 17 …… Radiation stand position adjustment screw, 18 ...... Gear, 19 …… Position adjusting screw, 20 …… Jig stand.
Claims (1)
た電極パターンからなるストリップラインをそれぞれ上
面に持ち半導体素子容器を入力側及び出力側の両方から
はさみ込む二つの金属製治具台と、この二つの金属製治
具台間に設けられ前記半導体素子容器を乗せて上下する
放熱台とを有し、この放熱台の両側面に取り付けられた
板ばねにより前記二つの金属製治具台と前記半導体素子
容器との隙間がそれぞれ等間隔となるようにはさみ込む
と同時に前記半導体素子容器の接地を可能としたことを
特徴とするマイクロ波半導体素子の特性評価用治具。1. Two metal jig bases each having a strip line composed of a dielectric substrate and an electrode pattern formed on the dielectric substrate on an upper surface and sandwiching a semiconductor element container from both the input side and the output side. And a heat radiating unit which is provided between the two metal jig bases and moves up and down on which the semiconductor element container is placed. The two metal jigs are attached by leaf springs attached to both side surfaces of the heat radiating base. A jig for characteristic evaluation of a microwave semiconductor device, which is capable of grounding the semiconductor device container at the same time as sandwiching the gap between the base and the semiconductor device container so as to be equidistant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2264197A JP2674869B2 (en) | 1990-10-02 | 1990-10-02 | Jig for evaluating the characteristics of microwave semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2264197A JP2674869B2 (en) | 1990-10-02 | 1990-10-02 | Jig for evaluating the characteristics of microwave semiconductor devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04142474A JPH04142474A (en) | 1992-05-15 |
| JP2674869B2 true JP2674869B2 (en) | 1997-11-12 |
Family
ID=17399834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2264197A Expired - Lifetime JP2674869B2 (en) | 1990-10-02 | 1990-10-02 | Jig for evaluating the characteristics of microwave semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2674869B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104375028A (en) * | 2014-11-07 | 2015-02-25 | 江苏博普电子科技有限责任公司 | Device for verifying performance of test board used for C-waveband GaN microwave power device |
-
1990
- 1990-10-02 JP JP2264197A patent/JP2674869B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04142474A (en) | 1992-05-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |