JP2678286B2 - Thin film forming equipment - Google Patents
Thin film forming equipmentInfo
- Publication number
- JP2678286B2 JP2678286B2 JP63070997A JP7099788A JP2678286B2 JP 2678286 B2 JP2678286 B2 JP 2678286B2 JP 63070997 A JP63070997 A JP 63070997A JP 7099788 A JP7099788 A JP 7099788A JP 2678286 B2 JP2678286 B2 JP 2678286B2
- Authority
- JP
- Japan
- Prior art keywords
- grid
- thin film
- anode
- shutter
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 32
- 239000000758 substrate Substances 0.000 claims description 27
- 239000012495 reaction gas Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 description 20
- 230000006866 deterioration Effects 0.000 description 12
- 239000010408 film Substances 0.000 description 9
- 230000007935 neutral effect Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高周波（RF）グロー放電によるプラズマCV
D法により、基板上に半導体薄膜等の薄膜を形成する薄
膜形成装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma CV by a radio frequency (RF) glow discharge.
The present invention relates to a thin film forming apparatus for forming a thin film such as a semiconductor thin film on a substrate by the D method.
一般に、アモルフアスシリコン薄膜などの薄膜を形成
する手法として、RFグロー放電によるプラズマCVD法が
知られており、これは、反応室内に配設されたカソー
ド，アノード間にRFグロー放電を発生させ、このRFグロ
ー放電により、反応ガスのプラズマを生成し、アノード
に装着保持された薄膜形成用基板上に薄膜を形成するも
のである。Generally, as a method for forming a thin film such as an amorphous silicon thin film, a plasma CVD method by RF glow discharge is known, which generates an RF glow discharge between a cathode and an anode arranged in a reaction chamber, By this RF glow discharge, plasma of the reaction gas is generated, and a thin film is formed on the thin film forming substrate mounted and held on the anode.
ところが、この場合、成膜中に放電により発生する電
子，イオンなどの高エネルギ粒子が、基板や基板上の薄
膜に衝突し、基板上に形成される薄膜の膜質の低下を招
くという不都合がある。However, in this case, high-energy particles such as electrons and ions generated by electric discharge during film formation collide with the substrate and the thin film on the substrate, which causes a deterioration in film quality of the thin film formed on the substrate. .
そこで従来、サード シンポジウム オン プラズマ
プロセシング,1981,「アナリシス オブ シラン グ
ロー デイスチヤージ バイ マス スペクトロスコピ
イ」〔Third Symposium on Plasma Processing,1981,
「ANALYSIS OF SILANE GLOW DISCHARGE BY MASS SPECTR
OS COPY」（Herbert A. Weakliem）に報告されているよ
うに、カソード，アノード間にメツシユ状のグリツドを
設ける，いわゆるトライオード法の採用により、成膜中
の高エネルギ粒子を衝突を抑えることが行なわれてい
る。Therefore, in the past, Third Symposium on Plasma Processing, 1981, "Analysis of Silane Glow Dish Charge by Mass Spectroscopy" [Third Symposium on Plasma Processing, 1981,
"ANALYSIS OF SILANE GLOW DISCHARGE BY MASS SPECTR
As described in "OS COPY" (Herbert A. Weakliem), the collision of high-energy particles during film formation is suppressed by adopting the so-called triode method in which a mesh-shaped grid is provided between the cathode and the anode. Has been.
ところで、このようなトライオード方式のRFグロー放
電プラズマCVD法に用いる装置は、たとえば第５図に示
すように構成されており、同図において、（１）は反応
ガスが供給される反応室、（２），（３）は反応室
（１）に平行に配設された平板状のカソード及びアノー
ド、（４）はアノード（３）に装着された薄膜形成用基
板、（５）はカソード（２）とアノード（３）との間に
配設されアースされたメツシユ状のグリツド、（６）は
カソード（２），グリツド（５）間に高周波電圧を印加
してグロー放電を発生させる高周波電源、（７）はアノ
ード（３）に直流バイアス電圧を印加するバイアス電源
である。By the way, an apparatus used for such a triode type RF glow discharge plasma CVD method is configured, for example, as shown in FIG. 5, in which (1) is a reaction chamber to which a reaction gas is supplied, 2) and 3) are flat plate-shaped cathodes and anodes arranged in parallel with the reaction chamber (1), (4) is a thin film forming substrate mounted on the anode (3), and (5) is cathode (2). ) And the anode (3) and grounded mesh-shaped grid, (6) a high frequency power source for applying a high frequency voltage between the cathode (2) and the grid (5) to generate glow discharge, (7) is a bias power source for applying a DC bias voltage to the anode (3).
そして、第５図に示す装置により薄膜を形成する場
合、電源（６）により、カソード（２），グリツド
（５）間に高周波電圧が印加されてRFグロー放電が発生
され、反応ガスがプラズマ化されて成膜ラジカルが生成
され、基板（４）上に成膜ラジカルによる薄膜が形成さ
れるとともに、バイアス電源（７）によりアノード
（３）にバイアス電圧が印加され、アース電位のグリツ
ド（５）により、RFグロー放電によつて発生する電子，
イオンなどの高エネルギ粒子が緩和され、基板（４）あ
るいは基板（４）上に形成される薄膜への高エネルギ粒
子の衝突が抑制される。When a thin film is formed by the apparatus shown in FIG. 5, a high frequency voltage is applied between the cathode (2) and the grid (5) by the power source (6) to generate RF glow discharge, and the reaction gas is turned into plasma. As a result, film-forming radicals are generated, a thin film is formed by the film-forming radicals on the substrate (4), and a bias voltage is applied to the anode (3) by the bias power supply (7), and the ground potential grid (5) is generated. Causes the electrons generated by the RF glow discharge,
High-energy particles such as ions are relaxed, and collision of the high-energy particles with the substrate (4) or the thin film formed on the substrate (4) is suppressed.
しかし、RFグロー放電の発生当初は、高エネルギ粒子
が非常に多く存在し、しかもこれらの高エネルギ粒子に
は中性のものも含まれているため、前記したようにグリ
ツド（５）を設けただけでは、放電発生直後の中性粒子
を含む高密度の高エネルギ粒子の基板（４）への衝突
を、十分に抑制することができず、基板（４）上に形成
される薄膜の膜質の劣化を防止することができないとい
う問題点がある。However, since the high-energy particles are present in a large amount at the beginning of the RF glow discharge, and these high-energy particles also include neutral particles, the grid (5) is provided as described above. Only with this, it is not possible to sufficiently suppress the collision of the high-density high-energy particles including the neutral particles immediately after the discharge with the substrate (4), and the quality of the thin film formed on the substrate (4) cannot be suppressed. There is a problem that deterioration cannot be prevented.
さらに、積層構造のデバイスを作成した場合には、各
層を形成する際のRFグロー放電発生直後の高エネルギ粒
子の衝撃の影響が下層に及び、たとえばテクニカル ダ
イジエスト オブ フアースト インターナシヨナル
フオトボルタイツク サイエンス アンド エンジニア
リング コンフアレンス,1984,頁719〜722〔Technical
Digest of 1st International Photovoltaic Science a
nd Engineering Conference,1984,p.719〜722〕に報告
されているように、各層の界面特性の劣化を招き、その
ため、非晶質薄膜太陽電池などの積層構造の光起電力素
子等を、良好な再現性，歩留で得ることができず、デバ
イス特性の低下の原因になる。Furthermore, when a device with a laminated structure is created, the impact of the high-energy particles immediately after the generation of RF glow discharge when forming each layer affects the lower layer, and, for example, the Technical Digest of Farst Internals.
Photovoltaic Science and Engineering Conference, 1984, pp. 719-722 [Technical
Digest of 1st International Photovoltaic Science a
nd Engineering Conference, 1984, p.719-722], it causes deterioration of the interfacial properties of each layer. It cannot be obtained with good reproducibility and yield, which causes deterioration of device characteristics.
そこで、本発明は前記の点に留意してなされ、トライ
オード方式のRFグロー放電プラズマCVD法による薄膜形
成の際に、グリツドとカソードとの間で発生する放電を
乱すことなく、RFグロー放電の発生直後の中性粒子を含
む高エネルギ粒子の基板あるいは基板上に成長薄膜への
衝突を防止し、得られる薄膜の膜質の劣化を防止し、非
晶質薄膜太陽電池などの積層構造の光起電力素子等を、
良好な再現性，歩留で得るようにすることを目的とす
る。Therefore, the present invention has been made with the above points in mind, and during the formation of a thin film by the RF glow discharge plasma CVD method of the triode method, without disturbing the discharge generated between the grid and the cathode, the generation of the RF glow discharge. Immediately after, collision of high-energy particles including neutral particles with the substrate or growth thin film on the substrate is prevented, deterioration of the quality of the obtained thin film is prevented, and photovoltaic power of laminated structure such as amorphous thin film solar cell is prevented. Elements,
The purpose is to obtain good reproducibility and yield.
つぎに、前記目的を達成するための手段を、実施例に
対応する第１図を用いて説明する。Next, means for achieving the above object will be described with reference to FIG. 1 corresponding to the embodiment.
すなわち、本発明では、反応ガスが供給される反応室
（１）と、 前記反応室（１）に平行に配設された平板状のカソー
ド（２）及びアノード（３）と、 前記アノード（３）に装着された薄膜形成用基板
（４）と、 前記カソード（２）と前記アノード（３）との間に配
設されたクリツド（８）と、 前記カソード（２），グリツド（８）間に高周波電圧
を印加してグロー放電を発生させる高周波電源（６）
と、 前記アノード（３）にバイアス電圧を印加するバイア
ス電源（７）と、 を備えた薄膜形成装置であって、 前記グロー放電が安定するまで閉状態に保持され、前
記グロー放電が安定した後開放されるシヤツタ（10）
を、前記グリツド（８）に近接して前記アノード（３）
側に、前記グリツド（８）と同電位で設けるという技術
的手段を講じている。That is, in the present invention, a reaction chamber (1) to which a reaction gas is supplied, a flat plate-shaped cathode (2) and an anode (3) arranged in parallel with the reaction chamber (1), and the anode (3 ), A thin film forming substrate (4), a grid (8) disposed between the cathode (2) and the anode (3), and a space between the cathode (2) and the grid (8). High frequency power source for generating glow discharge by applying high frequency voltage to battery (6)
And a bias power supply (7) for applying a bias voltage to the anode (3), which is held in a closed state until the glow discharge stabilizes, and after the glow discharge stabilizes. Shattered open (10)
The anode (3) close to the grid (8)
On the side, the technical means of providing the same potential as the grid (8) is taken.
したがつて、本発明によると、カソード（２），グリ
ツド（８）間に発生されるRFグロー放電が安定するまで
の間、シヤツタ（10）が閉状態に保持されるため、RFグ
ロー放電の放電開始直後における中性粒子を含む高エネ
ルギ粒子の基板（４）への衝突が、シヤツタ（10）によ
り防止され、基板（４）上に成長する薄膜の膜質の劣化
が防止される。Therefore, according to the present invention, since the shutter (10) is kept in the closed state until the RF glow discharge generated between the cathode (2) and the grid (8) is stabilized, Collision of high-energy particles including neutral particles with the substrate (4) immediately after the start of discharge is prevented by the shutter (10), and deterioration of the film quality of the thin film grown on the substrate (4) is prevented.
また、シヤツタ（10）をグリツド（８）のアノード
（３）側に設けているので、シヤツタ（10）の開閉時に
グリツド（８）とカソード（２）との間で発生する放電
を乱すことがない。Further, since the shutter (10) is provided on the anode (3) side of the grid (8), it is possible to disturb the discharge generated between the grid (8) and the cathode (2) when the shutter (10) is opened and closed. Absent.
さらに、シヤツタ（10）はグリツド（８）に近接し
て、グリツド（８）と同電位で設けられているのでシヤ
ツタ（10）とグリツド（８）間で不所望の放電を生じる
こともない。Furthermore, since the shutter (10) is provided close to the grid (8) and at the same potential as the grid (8), an undesired discharge does not occur between the grid (8) and the grid (8).
従って、各層の界面特性の劣化を防止して特性の向上
した積層構造の光起電力素子等を、良好な再現性、歩留
で提供することが可能となる。Therefore, it becomes possible to provide a photovoltaic element or the like having a laminated structure in which the interface characteristics of each layer are prevented from being deteriorated and the characteristics are improved with good reproducibility and yield.
つぎに、本発明を、その１実施例を示した第１図ない
し第４図とともに詳細に説明する。Next, the present invention will be described in detail with reference to FIGS. 1 to 4 showing one embodiment thereof.
全体の構成を示す第１図において、第５図と同一記号
は同一もしくは相当するものを示し、第１図において、
（８）は複数個のワイヤ（９）が等間隔（2mm）に配列
されて形成されたグリツドであり、カソード（２）とア
ノード（３）との間に配設され、アースされている。In FIG. 1 showing the entire structure, the same symbols as those in FIG. 5 indicate the same or corresponding ones, and in FIG.
Reference numeral (8) is a grid formed by arranging a plurality of wires (9) at equal intervals (2 mm), and is arranged between the cathode (2) and the anode (3) and grounded.
さらに、（10）はグリツド（８）の下側近傍に，すな
わちグリツド（８）に近接してアノード（３）側に、ア
ースされてグリツド（８）と同電位に設けられたシヤツ
タであり、各ワイヤ（９）の方向に直角方向に長尺の薄
い金属板（11）（幅1.5cm）が複数個配設されて形成さ
れ、閉状態では、第２図（ａ），（ｂ）に示すように、
各金属板（11）が順次に配列されてカソード（２），ア
ノード（３）間を遮蔽し、閉状態では、第３図（ａ），
（ｂ）に示すように、何枚かずつに組分けされた各金属
板（11）が各組ごとに重合されてカソード（２），アノ
ード（３）が開放される。Further, (10) is a shutter which is grounded near the lower side of the grid (8), that is, close to the grid (8) and on the side of the anode (3), and which is provided at the same potential as the grid (8), It is formed by arranging a plurality of thin metal plates (11) (width 1.5 cm) which are long in a direction perpendicular to the direction of each wire (9), and in a closed state, as shown in FIGS. 2 (a) and 2 (b). As shown
The metal plates (11) are sequentially arranged to shield between the cathode (2) and the anode (3), and in the closed state, as shown in FIG.
As shown in (b), the metal plates (11), which are grouped into several sheets, are polymerized into each group to open the cathode (2) and the anode (3).
このとき、シヤツタ（10）の開，閉は外部操作により
行われ、たとえば各金属板（11）に各組ごとに操作ワイ
ヤがそれぞれ係合され、各操作ワイヤを反応室（１）の
外部から手動によりあるいは機械的に引つ張ることによ
り、各組ごとの金属板（11）が移動され、シヤツタ（1
0）が開，閉されるようになつている。At this time, the opening and closing of the shutter (10) is performed by an external operation. For example, each metal plate (11) is engaged with an operation wire for each set, and each operation wire is connected to the outside of the reaction chamber (1). The metal plate (11) of each set is moved by pulling manually or mechanically, and the shutter (1
0) is opened and closed.
そして、基板（４）上に薄膜を形成する場合、まずシ
ヤツタ（10）を閉じておき、電源（６）によりカソード
（２），グリツド（８）間に高周波電圧を印加し、カソ
ード（２），グリツド（８）間にRFグロー放電を発生さ
せ、放電が安定するまでの間、シヤツタ（10）を第２図
（ａ），（ｂ）に示すように閉状態に保持し、カソード
（２），アノード（３）間を遮蔽する。When forming a thin film on the substrate (4), the shutter (10) is first closed, and a high frequency voltage is applied between the cathode (2) and the grid (8) by the power source (6) to generate the cathode (2). , An RF glow discharge is generated between the grid (8) and the shutter (10) is held in a closed state as shown in FIGS. 2 (a) and 2 (b) until the discharge is stabilized, and the cathode (2 ) And the anode (3) are shielded.
つぎに、RFグロー放電の発生から，放電が安定するま
での時間が経過したのち、シヤツタ（10）を第３図
（ａ），（ｂ）に示すように開状態にし、RFグロー放電
により生成される成膜ラジカルが基板（４）上に到達し
得る状態にし、基板（４）上への薄膜の形成を行う。Next, after a lapse of time from the generation of the RF glow discharge until the discharge is stabilized, the shutter (10) is opened as shown in FIGS. 3 (a) and 3 (b), and generated by the RF glow discharge. The film-forming radicals thus formed are allowed to reach the substrate (4), and a thin film is formed on the substrate (4).
このように、RFグロー放電が安定するまでの間、シヤ
ツタ（10）を閉状態に保持することにより、中性粒子を
含む高エネルギ粒子の基板（４）への衝突が防止される
ため、基板（４）上に成長する薄膜の膜質の劣化が防止
される。By holding the shutter (10) in the closed state until the RF glow discharge is stabilized in this way, high-energy particles including neutral particles are prevented from colliding with the substrate (4). (4) Deterioration of the film quality of the thin film grown on the top surface is prevented.
ところで、前記した装置を用い、下表に示す反応条件
でpin構造のアモルフアスシリコン太陽電池の作成を行
い、得られた太陽電池の収集効率を測 定した結果、第４図中の実線に示すようになつた。ただ
し、この場合、基板（４）として，上面に透光性導電酸
化膜を形成したガラス基板を用い、裏面電極としてアル
ミニウム蒸着膜を用いている。By the way, using the above-mentioned equipment, the amorphous silicon solar cells of pin structure were prepared under the reaction conditions shown in the table below, and the collection efficiency of the obtained solar cells was measured. As a result of the determination, the solid line in FIG. 4 was obtained. However, in this case, a glass substrate having a transparent conductive oxide film formed on the upper surface is used as the substrate (4), and an aluminum vapor deposition film is used as the back electrode.
なお、p,i,nの各層形成時に、RFグロー放電が安定す
るまでの間、シヤツタ（10）を閉じておき、安定後シヤ
ツタ（10）を開放するのは、前記したとおりである。As described above, the shutter (10) is closed and the shutter (10) is opened after stabilization until the RF glow discharge is stabilized during the formation of the p, i, and n layers.
そして、比較のため、前記した反応条件と同一条件下
で、第５図の従来装置を用いて作成したアモルフアスシ
リコン太陽電池の収集効率の測定も行い、これを第４図
中の破線に示す。For comparison, the collection efficiency of the amorphous silicon solar cell prepared by using the conventional apparatus shown in FIG. 5 was also measured under the same reaction conditions as described above, and this is shown by the broken line in FIG. .
このように、第４図から明らかなように、第１図に示
す本発明の実施例の装置により作成した太陽電池の方
が、従来装置により作成した太陽電池に比べ、300〜600
nmの短波長側における収集効率が増大しており、短波長
感度の向上が見られ、これはシヤツタ（10）を設けたこ
とにより、ｉ層形成の際に、下層のｐ層に加わるダメー
ジが従来装置の場合に比べて低減することが可能とな
り、その結果、ｉ層の膜質の劣化を防止できたためであ
る。Thus, as is clear from FIG. 4, the solar cell produced by the device of the embodiment of the present invention shown in FIG. 1 is 300 to 600 as compared with the solar cell produced by the conventional device.
The collection efficiency on the short wavelength side of nm is increased, and the short wavelength sensitivity is improved. This is because the provision of the shutter (10) prevents damage to the lower p layer when forming the i layer. This is because it can be reduced as compared with the case of the conventional device, and as a result, deterioration of the film quality of the i layer can be prevented.
したがつて、前記実施例によると、RFグロー放電が安
定するまでの間、シヤツタ（10）を閉状態に保持し、RF
グロー放電の安定後シヤツタ（10）を開くようにしたた
め、放電開始直後における中性粒子を含む高エネルギ粒
子の基板（４）への衝突を、シヤツタ（10）により防止
することができ、基板（４）上に成長する薄膜の膜質の
劣化を防止することができ、非晶質薄膜太陽電池などの
積層構造の光起電力素子を作成する場合に、従来に比
べ、各層の界面特性の劣化を防止して素子特性の向上を
図ることが可能となる。Therefore, according to the above-mentioned embodiment, until the RF glow discharge becomes stable, the shutter (10) is kept closed and the RF
Since the shutter (10) is opened after the glow discharge is stabilized, collision of high-energy particles including neutral particles with the substrate (4) immediately after the start of discharge can be prevented by the shutter (10). 4) It is possible to prevent the deterioration of the film quality of the thin film that grows on top of it, and when making a photovoltaic element having a laminated structure such as an amorphous thin-film solar cell, the interface characteristics of each layer are deteriorated more than before. It is possible to prevent it and improve the element characteristics.
さらに、前記実施例において、シヤツタ（10）を導電
性材料により形成し、かつ、シヤツタ（10）をグリツド
（８）のアノード（３）側に設けているので、シヤツタ
（10）の開閉時にグリツド（８）とカソード（２）との
間で発生する放電を乱すことがない。Further, in the above-mentioned embodiment, since the shutter (10) is made of a conductive material and the shutter (10) is provided on the anode (3) side of the grid (8), the grid (8) is opened and closed when the grid is opened and closed. The discharge generated between (8) and the cathode (2) is not disturbed.
さらに、シヤツタ（10）がグリツド（８）に近接し
て、グリツド（８）と同電位で設けられているのでシヤ
ツタ（10）とグリツド（８）間で不所望の放電を生じる
こともない。Furthermore, since the shutter (10) is provided close to the grid (8) and is provided with the same potential as the grid (8), an undesired discharge does not occur between the shutter (10) and the grid (8).
したがって、各層の界面特性の劣化を防止して特性の
向上した積層構造の光起電力素子等を、良好な再現性、
歩留で提供することが可能となる。Therefore, it is possible to obtain a photovoltaic element or the like having a laminated structure with improved characteristics by preventing the deterioration of the interface characteristics of each layer, with good reproducibility,
It becomes possible to provide it with a yield.
なお、グリツド（８），シヤツタ（10）の構成は、前
記したものに限らないのは言うまでもない。Needless to say, the configurations of the grid (8) and the shutter (10) are not limited to those described above.
本発明は、以上説明したように構成されているので、
以下に記載するような効果を奏する。Since the present invention is configured as described above,
The following effects are obtained.
RFグロー放電開始直後における中性粒子を含む高エネ
ルギ粒子の基板への衝突を、シヤツタにより防止するこ
とができるため、基板上に成長する薄膜の膜質の劣化を
防止することができる。Since collision of high-energy particles including neutral particles with the substrate immediately after the start of RF glow discharge can be prevented by the shutter, deterioration of the quality of the thin film growing on the substrate can be prevented.
また、シヤツタをグリツドのアナード側に設けている
ので、シヤツタの開閉時にグリツドとカソードとの間で
発生する放電を乱すことがない。Further, since the shutter is provided on the anard side of the grid, the discharge generated between the grid and the cathode when the shutter is opened / closed is not disturbed.
さらに、シヤツタはグリツドに近接して、グリツドと
同電位で設けられているのでシヤツタとグリツド間で不
所望の放電を生じることもない。Furthermore, since the shutter is provided close to the grid and at the same potential as the grid, no undesired discharge is generated between the shutter and the grid.
したがって、非晶質薄膜太陽電池などの積層構造の光
起電力素子を作成する際に、各層の界面特性の劣化を防
止して特性の向上した素子を、良好な再現性、歩留で提
供することができる。Therefore, when a photovoltaic element having a laminated structure such as an amorphous thin film solar cell is created, an element having improved characteristics by preventing deterioration of the interface characteristics of each layer is provided with good reproducibility and yield. be able to.
第１図ないし第４図は本発明の薄膜形成装置の１実施例
を示し、第１図は正面図、第２図（ａ），（ｂ）は閉状
態におけるシヤツタの底面図及び正面図、第３図
（ａ），（ｂ）は開状態におけるシヤツタの底面図及び
正面図、第４図は収集効率特性図、第５図は従来例の正
面図である。 （１）……反応室、（２）……カソード、（３）……ア
ノード、（４）……基板、（６）……高周波電源、
（７）……バイアス電源、（８）……グリツド、（10）
……シヤツタ。1 to 4 show one embodiment of a thin film forming apparatus of the present invention, FIG. 1 is a front view, and FIGS. 2 (a) and 2 (b) are bottom and front views of a shutter in a closed state, 3 (a) and 3 (b) are bottom and front views of the shutter in the open state, FIG. 4 is a collection efficiency characteristic diagram, and FIG. 5 is a front view of a conventional example. (1) ... Reaction chamber, (2) ... Cathode, (3) ... Anode, (4) ... Substrate, (6) ... High frequency power supply,
(7) …… Bias power supply, (8) …… Grid, (10)
...... Shyatsuta.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 津田 信哉 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (72)発明者 中野 昭一 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (72)発明者 桑野 幸徳 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (56)参考文献 特開 昭58−124223（ＪＰ，Ａ) 特開 昭60−160117（ＪＰ，Ａ) 特開 昭61−144817（ＪＰ，Ａ) 特開 昭61−89628（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Shinya Tsuda 2-18 Keihan Hon-dori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (72) Inventor Shoichi Nakano 2-18-3 Keihan-hondori, Moriguchi-shi, Osaka Within Yoyo Electric Co., Ltd. (72) Inventor Yukinori Kuwano 2-18 Keihan Hondori, Moriguchi City, Osaka Sanyo Electric Co., Ltd. (56) Reference JP-A-58-124223 (JP, A) JP-A-60- 160117 (JP, A) JP 61-144817 (JP, A) JP 61-89628 (JP, A)
Claims (1)
ノードと、 前記アノードに装着された薄膜形成用基板と、 前記カソードと前記アノードの間に配設されたグリツド
と、 前記カソード，グリツド間に高周波電圧を印加してグロ
ー放電を発生させる高周波電源と、 前記アノードにバイアス電圧を印加するバイアス電源
と、 を備えた薄膜形成装置であって、 前記グロー放電が安定するまで閉状態に保持され、前記
グロー放電が安定した後開放されるシヤツタが、前記グ
リツドに近接して前記アノード側に、前記グリツドと同
電位で設けられたことを特徴とする薄膜形成装置。1. A reaction chamber to which a reaction gas is supplied, a flat cathode and an anode arranged in parallel to the reaction chamber, a thin film forming substrate attached to the anode, the cathode and the anode. A thin film forming apparatus including: a grid disposed between the cathode and the grid; a high frequency power supply that applies a high frequency voltage between the cathode and the grid to generate glow discharge; and a bias power supply that applies a bias voltage to the anode. There is a shutter that is kept closed until the glow discharge is stable, and is opened after the glow discharge is stable, and the shutter is provided on the anode side near the grid at the same potential as the grid. A thin film forming apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63070997A JP2678286B2 (en) | 1988-03-24 | 1988-03-24 | Thin film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63070997A JP2678286B2 (en) | 1988-03-24 | 1988-03-24 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01243413A JPH01243413A (en) | 1989-09-28 |
| JP2678286B2 true JP2678286B2 (en) | 1997-11-17 |
Family
ID=13447707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63070997A Expired - Fee Related JP2678286B2 (en) | 1988-03-24 | 1988-03-24 | Thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2678286B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4841735B2 (en) * | 2001-03-23 | 2011-12-21 | 旭硝子株式会社 | Deposition method |
| JP5862027B2 (en) * | 2010-03-25 | 2016-02-16 | 東レ株式会社 | Plasma CVD apparatus and method for manufacturing thin film substrate |
| JP6406811B2 (en) * | 2013-11-20 | 2018-10-17 | 国立大学法人名古屋大学 | III-nitride semiconductor device manufacturing apparatus and method, and semiconductor wafer manufacturing method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58124223A (en) * | 1982-01-20 | 1983-07-23 | Hitachi Ltd | Plasma treating device |
| JPS60160117A (en) * | 1984-01-30 | 1985-08-21 | Nec Corp | Plasma chemical vapor deposition (cvd) device |
| JPS6189628A (en) * | 1984-10-09 | 1986-05-07 | Agency Of Ind Science & Technol | Plasma cvd equipment |
| JPS61144817A (en) * | 1984-12-19 | 1986-07-02 | Hitachi Ltd | Electrode for film deposition equipment |
-
1988
- 1988-03-24 JP JP63070997A patent/JP2678286B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01243413A (en) | 1989-09-28 |
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