JP2739336B2 - Thin film formation method - Google Patents
Thin film formation methodInfo
- Publication number
- JP2739336B2 JP2739336B2 JP1067960A JP6796089A JP2739336B2 JP 2739336 B2 JP2739336 B2 JP 2739336B2 JP 1067960 A JP1067960 A JP 1067960A JP 6796089 A JP6796089 A JP 6796089A JP 2739336 B2 JP2739336 B2 JP 2739336B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- thin film
- magnetic field
- substrate
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 7
- 230000015572 biosynthetic process Effects 0.000 title description 10
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 238000000354 decomposition reaction Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 230000005684 electric field Effects 0.000 claims description 15
- 239000002994 raw material Substances 0.000 claims description 15
- 230000001737 promoting effect Effects 0.000 claims description 12
- 239000007789 gas Substances 0.000 description 43
- 239000010408 film Substances 0.000 description 16
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000001965 increasing effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 101100310856 Drosophila melanogaster spri gene Proteins 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910017875 a-SiN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、アモルフアスシリコン薄膜，その他の半導
体薄膜等の薄膜を形成する薄膜形成方法に関する。Description: TECHNICAL FIELD The present invention relates to a thin film forming method for forming a thin film such as an amorphous silicon thin film or another semiconductor thin film.
従来、アモルフアスシリコン薄膜を形成する手段とし
てプラズマCVD法がよく知られており、例えば第５図に
示すように、反応室（１）に平行にカソード電極（２）
及びアノード電極（３）を配設し、アノード電極（３）
に薄膜形成用基板（４）を取り付け、RF電源（５）によ
り両電極（２），（３）間にRF電界を形成し、カソード
電極（２）側から両電極（２），（３）間に供給される
原料ガスをRF電界によりプラズマ化し、基板（４）にプ
ラズマ化した原料ガス成分からなる薄膜を形成するもの
である。Conventionally, a plasma CVD method has been well known as a means for forming an amorphous silicon thin film. For example, as shown in FIG. 5, a cathode electrode (2) is parallel to a reaction chamber (1).
And an anode electrode (3).
The substrate (4) for forming a thin film is mounted on the substrate, an RF electric field is formed between the electrodes (2) and (3) by the RF power source (5), and the electrodes (2) and (3) are formed from the cathode electrode (2) side. The source gas supplied therebetween is turned into plasma by an RF electric field, and a thin film made of the source gas component turned into plasma is formed on the substrate (4).
なお、第５図において、（６）はアノード電極（３）
にアース電位に対して負バイアスを与える可変直流電源
である。In FIG. 5, (6) is an anode electrode (3)
Is a variable DC power supply that applies a negative bias to the ground potential.
ところがこの場合、成膜速度が遅いという欠点がある
ため、例えばRFパワーを上げて成膜速度を上げたとき
に、基板（４）の表面での成膜種の動きが抑制され、成
膜種が基板（４）の安定な位置へ動けなくなり、更に基
板（４）に成長する薄膜が高速荷電粒子によるダメージ
を受け、膜特性の低化を招くという不都合が生じる。However, in this case, there is a disadvantage that the film formation rate is low. For example, when the film formation rate is increased by increasing the RF power, the movement of the film formation type on the surface of the substrate (4) is suppressed, Cannot move to a stable position on the substrate (4), and the thin film growing on the substrate (4) is damaged by the high-speed charged particles, resulting in a deterioration in film characteristics.
そこで従来、カソード電極（２）の下側に磁石を設け
て両電極（２），（３）間に磁界を形成し、この磁界に
よつて両電極（２），（３）間に原料ガスのプラズマを
閉じ込めることが考えられており、これにより、例えば
Proceeding of MRS（Material Research Society）spri
ng meeting 1988,p557−567に報告されているように、
プラズマダメージを低減して膜特性の向上を図ることが
可能になる。Therefore, conventionally, a magnet is provided below the cathode electrode (2) to form a magnetic field between the electrodes (2) and (3), and the magnetic field is used to generate a raw material gas between the electrodes (2) and (3). Is thought to confine the plasma of
Proceeding of MRS (Material Research Society) spri
As reported in ng meeting 1988, p557-567,
It is possible to improve plasma characteristics by reducing plasma damage.
しかし、磁界の形成によりプラズマダメージは低減で
きても、基板（４）の表面での成膜種の反応を促進する
ことはできないため、H2よN2などの非成膜性の反応促進
ガスを反応室（１）に導入することが従来行われてい
る。However, even if plasma damage can be reduced by formation of a magnetic field, it is not possible to promote the deposition species reaction on the surface of the substrate (4), non-deposition of the reaction accelerating gases such as H 2 O N 2 Is conventionally introduced into the reaction chamber (1).
従来の場合、反応促進ガスと原料ガスとを同じガス導
入系によつて反応室（１）に導入し、反応促進ガスと原
料ガスの分解エネルギが異なるにも拘らず、両電極
（２），（３）間のRF電界によつて両ガスを一緒に分解
しているため、反応促進ガスと原料ガスの分解の度合が
異なり、例としてN2とSiH4では、N2の結合エネルギ226K
cal/molであるのに対し、シラン〔SiH4〕の結合エネル
ギは70Kcal/molであり、SiH4に比べてN2の分解エネルギ
が高くなり、RFパワーを分解エネルギの低い原料ガスと
してのSiH4に合わせると、反応促進ガスとしてのN2が十
分に分解されず、逆の場合には、高速荷電粒子のエネル
ギが高くなつて成長膜がダメージを受けるため、組成を
含め良質な薄膜を得ることができないという問題点があ
る。In the conventional case, the reaction promoting gas and the source gas are introduced into the reaction chamber (1) by the same gas introduction system, and the two electrodes (2), (2), (3) since the decomposition together by connexion both gas RF field between, different degree of decomposition of the reaction accelerating gas and the source gas, the N 2 and SiH 4 as an example, the bonding energy of N 2 226k
cal / mol, whereas the binding energy of silane [SiH 4 ] is 70 Kcal / mol, the decomposition energy of N 2 is higher than that of SiH 4 , and the RF power is reduced to SiH as a raw material gas having a lower decomposition energy. When adjusted to 4 , N 2 as the reaction promoting gas is not sufficiently decomposed, and in the opposite case, the energy of the fast charged particles is increased and the grown film is damaged, so that a good quality thin film including the composition is obtained. There is a problem that it is not possible.
本発明は、前記の点に留意してなされ、膜質の良好な
薄膜を形成できるようにすることを目的とする。The present invention has been made in consideration of the above points, and has as its object to form a thin film having good film quality.
前記目的を達成するために、反応室に平行にカソード
電極及びアノード電極を配設し、前記アノード電極に薄
膜形成用基板を取り付け、前記両電極間の電界により前
記両電極間に供給される原料ガスをプラズマ化し、前記
基板にプラズマ化した前記原料ガス成分からなる薄膜を
形成する薄膜形成方法において、本発明では、 前記カソード電極側から前記両電極間に前記原料ガス
を供給し、前記カソード電極の外側に設けた磁界形成手
段の形成磁界により前記原料ガスのプラズマを閉じ込
め、前記反応室に連通した予備分解室において非成膜性
の反応促進ガスを分解して活性種を生成し、前記活性種
を前記基板の近傍に導入することを特徴としている。In order to achieve the above object, a cathode electrode and an anode electrode are disposed in parallel with a reaction chamber, a thin film forming substrate is attached to the anode electrode, and a raw material supplied between the two electrodes by an electric field between the two electrodes In the thin film forming method for forming a thin film made of the raw material gas component which has been converted into a plasma on the substrate, the raw material gas is supplied from the cathode electrode side to between the two electrodes, The plasma of the raw material gas is confined by a magnetic field formed by a magnetic field forming means provided outside the substrate, and a non-film-forming reaction promoting gas is decomposed in a pre-decomposition chamber connected to the reaction chamber to generate active species. The method is characterized in that seeds are introduced near the substrate.
また、カソード電極及びアノード電極間に高周波電界
を形成し、磁界形成手段を電磁石により構成して前記電
磁石の形成磁界の強度を可変にしてもよい。Further, a high-frequency electric field may be formed between the cathode electrode and the anode electrode, and the magnetic field forming means may be constituted by an electromagnet to vary the intensity of the magnetic field formed by the electromagnet.
以上のような構成において、反応室で原料ガスが分解
され、予備分解室で反応促進ガスが分解されるため、分
解エネルギの異なる両ガスがそれぞれ効率よく分解さ
れ、原料ガスの分解によつて生じる成膜種の基板表面で
の反応が、反応促進ガスの分解によつて生じる活性種に
よつて有効に促進され、この反応促進作用と、磁界形成
手段の形成磁界による原料ガスのプラズマの閉じ込め作
用とが相まつて、基板に良好な膜質の薄膜が形成され
る。In the above configuration, the raw material gas is decomposed in the reaction chamber and the reaction promoting gas is decomposed in the pre-decomposition chamber, so that both gases having different decomposition energies are efficiently decomposed, respectively, and are generated by the decomposition of the raw material gas. The reaction of the film-forming species on the substrate surface is effectively promoted by the active species generated by the decomposition of the reaction-promoting gas, and this reaction promoting action and the confinement action of the source gas plasma by the magnetic field formed by the magnetic field forming means are performed. Accordingly, a thin film of good film quality is formed on the substrate.
また、両電極間に高周波電界を形成し、磁界形成手段
としての電磁石の磁界強度を可変することにより、原料
ガスがより効率よく分解され、磁界によりプラズマの高
速荷電粒子の運動が制御され、基板表面への荷電粒子の
拡散が抑制され、成長膜の膜質の向上が図れる。In addition, by forming a high-frequency electric field between both electrodes and varying the magnetic field strength of the electromagnet as a magnetic field forming means, the raw material gas is decomposed more efficiently, and the movement of the high-speed charged particles of the plasma is controlled by the magnetic field. Diffusion of charged particles to the surface is suppressed, and the quality of the grown film can be improved.
実施例について第１図ないし第４図を参照して説明す
る。An embodiment will be described with reference to FIGS.
（実施例１） まず、実施例１を示した第１図及び第２図について説
明する。Embodiment 1 First, FIGS. 1 and 2 showing Embodiment 1 will be described.
形成装置の概略を示す第１図において、第５図と同一
記号は同一若しくは相当するものを示し、（７）はカソ
ード電極（２）の下側に設けられ両電極（２），（３）
間に原料ガスのプラズマ閉じ込め用の磁界Bmを形成する
強度可変の磁界形成手段としての電磁石、（８）は反応
室（１）に左側に連通して設けられ非成膜性の反応促進
ガスが供給される予備分解室、（９），（10）は予備分
解室（８）に平行に配設された反応促進ガス分解用のカ
ソード電極及びアノード電極、（11）は両電極（９），
（10）間にRF電界を形成するRF電源、（12）は両室
（１），（８）間に設けられ反応促進ガスの活性種の誘
導用バイアスが与えられるメツシユである。In FIG. 1 showing the outline of the forming apparatus, the same symbols as those in FIG. 5 indicate the same or corresponding parts, and (7) is provided below the cathode electrode (2) and both electrodes (2), (3)
Electromagnet as variable intensity of the magnetic field forming means for forming a magnetic field B m for confinement of material gas plasma between, (8) a non-film-forming properties of the reaction accelerating gas provided to communicate with the left in the reaction chamber (1) Is supplied to the pre-decomposition chamber, (9) and (10) are a cathode electrode and an anode electrode disposed parallel to the pre-decomposition chamber (8) for decomposing a reaction promoting gas, and (11) is both electrodes (9). ,
An RF power source for forming an RF electric field between (10) and (12) is a mesh provided between the two chambers (1) and (8) and applied with a bias for inducing the active species of the reaction promoting gas.
なお、第１図には図示されていないが、反応室（１）
の右側に排気口が形成されている。Although not shown in FIG. 1, the reaction chamber (1)
An exhaust port is formed on the right side of.
そして、例えばアモルフアスシリコン（以下ａ−Siと
いう）薄膜を形成する場合、原料ガスとしてのSiH4が反
応室（１）において両電極（２），（３）間のRF電界に
よつて分解（プラズマ化）され、電磁石（７）の形成磁
界Bmにより両電極（２），（３）間に原料ガスのプラズ
マが閉じ込められる。For example, when an amorphous silicon (hereinafter referred to as a-Si) thin film is formed, SiH 4 as a source gas is decomposed in the reaction chamber (1) by an RF electric field between the two electrodes (2) and (3). plasma) is, both electrodes by forming a magnetic field B m of the electromagnet (7) (2), a plasma of the raw material gas is trapped between (3).
一方、予備分解室（８）において、非成膜性反応促進
ガスとしてのH2が両電極（９），（10）間のRF電界によ
つて分解（プラズマ化）され、分解により生じた活性種
（以下これをＨラジカルという）が基板（４）の近傍に
導入され、原料ガスの分解により生じたSiH3などの成膜
種の基板（４）の表面での反応がＨラジカルによつて促
進され、基板（４）に良好な膜質のａ−Si薄膜が形成さ
れる。On the other hand, in the pre-decomposition chamber (8), H 2 as a non-film-forming reaction-promoting gas is decomposed (plasmaized) by the RF electric field between both electrodes (9) and (10), and the activity generated by decomposition is generated. A species (hereinafter referred to as an H radical) is introduced near the substrate (4), and a reaction on the surface of the substrate (4) of a film-forming species such as SiH 3 generated by decomposition of a source gas is caused by the H radical. As a result, an a-Si thin film having good film quality is formed on the substrate (4).
ところで、第１図に示す装置を用い、表１に示す条件
でａ−Si薄膜を形成し、AM−1.5,100mW/cm2の光照射下
での導電率σｐ及び暗状態での導電率σｄを測定し、成
膜速度と導電率の比σp/σｄで表わされる光感度との関
係を調べたところ、第２図の○印に示すようになつた。By the way, an a-Si thin film was formed using the apparatus shown in FIG. 1 under the conditions shown in Table 1, and the conductivity σp under AM-1.5, 100 mW / cm 2 light irradiation and the conductivity σd in the dark state were used. Was measured, and the relationship between the film formation rate and the photosensitivity expressed by the ratio of the conductivity σp / σd was examined. The results were as shown by the circles in FIG.
このとき比較のために、従来法により表２に示す条件
でａ−Si薄膜を形成し、同様に成膜速度と光感度との関
係を調べたところ、第２図の●印に示すようになつた。 At this time, for comparison, an a-Si thin film was formed by the conventional method under the conditions shown in Table 2, and the relationship between the film formation rate and the photosensitivity was examined in the same manner. Natsuta
そして、第２図から明らかなように従来法によりａ−
Si薄膜では、成膜速度の増大に連れて光感度が大幅に低
下するのに対し、本実施例によるａ−Si薄膜では、成膜
速度が増大しても光感度はあまり低下せず、高速形成で
も良質のａ−Si薄膜が得られることがわかる。 Then, as is apparent from FIG. 2, a-
In the case of the Si thin film, the photosensitivity is greatly reduced with the increase in the deposition rate. On the other hand, in the a-Si thin film according to the present embodiment, the photosensitivity does not decrease so much even when the deposition rate is increased, and the light sensitivity is high. It can be seen that a high-quality a-Si thin film can be obtained by the formation.
これは、反応室（１），予備分解室（８）でSiH4,H2
をそれぞれ分解したことにより、分解エネルギの異なる
２種類のガスを最適の条件で効率よく分解でき、成膜種
の基板（４）の表面での反応のＨラジカル（活性種）に
より促進できたことと、電磁石（７）の形成磁界Bmによ
り原料ガスのプラズマを閉じ込めたことにより、プラズ
マの高速荷電粒子の運動を抑制できたこととが相まつた
ためである。This reaction chamber (1), SiH 4 in the preliminary decomposition chamber (8), H 2
Respectively, the two types of gases having different decomposition energies could be efficiently decomposed under the optimal conditions, and the H radicals (active species) of the reaction on the surface of the substrate (4) of the film formation species could be promoted. When, by confining the plasma of the source gas by forming a magnetic field B m of the electromagnet (7), it is because the fact that it is possible to suppress the movement of the plasma high-speed charged particles are Aimatsu.
従つて、特性の優れた太陽電池その他の光起電力素子
等を作成する上で、極めて有利である。Therefore, it is extremely advantageous in producing a solar cell or other photovoltaic element having excellent characteristics.
また、両電極（２），（３）間に高周波電界を形成
し、電磁石（７）の磁界強度を可変することにより、原
料ガスをより効率よく分解できると共に、磁界によりプ
ラズマの高速荷電粒子の運動を制御でき、基板（４）の
表面への荷電粒子の拡散を抑制して成長膜の膜質のいつ
そうの向上を図ることができる。Further, by forming a high-frequency electric field between the two electrodes (2) and (3) and varying the magnetic field strength of the electromagnet (7), the raw material gas can be decomposed more efficiently, and the high-speed charged particles of the plasma can be reduced by the magnetic field. The movement can be controlled, and the diffusion of the charged particles to the surface of the substrate (4) can be suppressed to improve the quality of the grown film.
（実施例２） つぎに、実施例２を示す第３図及び第４図について説
明する。Second Embodiment Next, FIGS. 3 and 4 showing a second embodiment will be described.
それらの図面において、第１図と同一記号は同一若し
くは相当するものを示し、第１図と異なる点は、両室
（１），（８）を仕切板（13）で仕切り、右端が閉塞し
た２個の石英管（14）を反応室（１）の両電極（２），
（３）間の前側，後側にそれぞれ水平に配設し、両石英
管（14）に内側に複数個の透孔（15）を透設し、両石英
管（14）の開口した左端側を接合すると共に、仕切板
（13）を貫通して予備分解室（８）に導入し、両石英管
（14）と予備分解室（８）とを連通して配設した点であ
り、予備分解室（８）で生成された活性種が両石英管
（14）を経て，各透孔（15）から基板（４）の近傍に供
給される。In these drawings, the same symbols as those in FIG. 1 indicate the same or corresponding ones. The difference from FIG. 1 is that both chambers (1) and (8) are partitioned by a partition plate (13), and the right end is closed. Two quartz tubes (14) are connected to both electrodes (2) of the reaction chamber (1),
(3) Arranged horizontally on the front side and the rear side between them, and through both quartz tubes (14) with a plurality of through holes (15) inside, the left end side where both quartz tubes (14) are open And the quartz tube (14) and the pre-decomposition chamber (8) were placed in communication with each other, and introduced into the pre-decomposition chamber (8) through the partition plate (13). The active species generated in the decomposition chamber (8) are supplied to the vicinity of the substrate (4) from each through hole (15) through both quartz tubes (14).
なお、ａ−Si以外の合金系薄膜，例えばａ−SiNやａ
−SiO或いは絶縁体薄膜などを形成する場合であつて
も、本発明を同様に実施することができるのは言うまで
もない。In addition, alloy-based thin films other than a-Si, for example, a-SiN and a
It is needless to say that the present invention can be carried out in the same manner even in the case of forming SiO or an insulating thin film.
また、予備分解室（８）で反応促進ガスを分解して活
性種を生成する場合、前記両実施例のような両電極間の
RF電界に代え、ヒータの加熱により行つてもよく、例え
ばシリコン酸化膜〔SiOx〕を形成する際のO2のように、
ヒータ加熱の方が有効である場合など、ガスの種類に応
じて選択すればよい。In the case where active species are generated by decomposing the reaction promoting gas in the pre-decomposition chamber (8), the distance between the two electrodes as in the above-mentioned two embodiments is increased.
Instead of the RF electric field, it may be performed by heating of a heater, for example, like O 2 when forming a silicon oxide film (SiOx),
The selection may be made according to the type of gas, for example, when the heater heating is more effective.
さらに、反応室（１）の両電極（２），（３）間に形
成する電界、或いは予備分解室（８）の両電極（９），
（10）間に形成する電界は高周波である必要はなく、商
用周波であつてもよい。Further, an electric field formed between the two electrodes (2) and (3) in the reaction chamber (1) or the two electrodes (9) and
The electric field formed between (10) does not need to be a high frequency, but may be a commercial frequency.
また、磁場発生手段は前記した電磁石（７）に限ら
ず、永久磁石を用いてもよいのは勿論である。Further, the magnetic field generating means is not limited to the above-described electromagnet (7), but may be a permanent magnet.
本発明は、以上説明したように構成されているので、
以下に記載する効果を奏する。Since the present invention is configured as described above,
The following effects are obtained.
反応室で原料ガスが分解され、予備分解室で反応促進
ガスが分解されるため、分解エネルギの異なる両ガスを
それぞれ効率よく分解することができ、原料ガスの分解
によつて生じる成膜種の基板表面での反応を、反応促進
ガスの分解によつて生じる活性種によつて有効に促進す
ることが可能になり、この反応促進作用と、磁界形成手
段の形成磁界による原料ガスのプラズマの閉じ込め作用
とが相まつて、基板に良好な膜質の薄膜を形成すること
ができる。Since the raw material gas is decomposed in the reaction chamber and the reaction promoting gas is decomposed in the pre-decomposition chamber, both gases having different decomposition energies can be efficiently decomposed, respectively, and the film-forming species generated by the decomposition of the source gas can be removed. The reaction on the substrate surface can be effectively promoted by the active species generated by the decomposition of the reaction promoting gas, and the reaction promoting action and the confinement of the source gas plasma by the magnetic field formed by the magnetic field forming means can be achieved. Together with the action, a thin film of good film quality can be formed on the substrate.
また、両電極間に高周波電界を形成し、磁界形成手段
としての電磁石の磁界強度を可変することにより、原料
ガスがより効率よく分解され、磁界によりプラズマの高
速荷電粒子の運動を制御でき、基板表面への荷電粒子の
拡散を抑制でき、成長膜の膜質の向上を図ることができ
る。Also, by forming a high-frequency electric field between both electrodes and varying the magnetic field strength of the electromagnet as a magnetic field forming means, the source gas is more efficiently decomposed, and the magnetic field can control the movement of the high-speed charged particles of the plasma. Diffusion of charged particles to the surface can be suppressed, and the quality of the grown film can be improved.
第１図ないし第４図は本発明の薄膜形成方法の実施例を
示し、第１図及び第２図は実施例１を示し、第１図は形
成装置の正面図、第２図は形成した薄膜の成膜速度と光
感度との関係図、第３図及び第４図は実施例２の正面図
及び平面図、第５図は従来例の正面図である。 （１）……反応室、（２）……カソード電極、（３）…
…アノード電極、（４）……薄膜形成用基板、（７）…
…電磁石、（８）……予備分解室。1 to 4 show an embodiment of the thin film forming method of the present invention, FIGS. 1 and 2 show Embodiment 1, FIG. 1 is a front view of a forming apparatus, and FIG. 3 and 4 are a front view and a plan view of the second embodiment, and FIG. 5 is a front view of a conventional example. (1) ... reaction chamber, (2) ... cathode electrode, (3) ...
... Anode electrode, (4) ... Substrate for thin film formation, (7) ...
... Electromagnet, (8) ... Preliminary decomposition chamber.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 中野 昭一 大阪府守口市京阪本通２丁目18番地 三 洋電機株式会社内 (56)参考文献 特開 昭57−45226（ＪＰ，Ａ) 特開 昭62−211368（ＪＰ，Ａ) 特開 昭57−197875（ＪＰ，Ａ) 特開 昭59−161812（ＪＰ，Ａ) 特開 昭58−132920（ＪＰ，Ａ) 特開 昭61−1025（ＪＰ，Ａ) 特開 昭59−131515（ＪＰ，Ａ) 特開 昭62−274627（ＪＰ，Ａ) 特開 昭62−136573（ＪＰ，Ａ) 特開 平１−130533（ＪＰ，Ａ) ──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Shoichi Nakano 2-18-18 Keihanhondori, Moriguchi-shi, Osaka Sanyo Electric Co., Ltd. (56) References JP-A-57-45226 (JP, A) JP-A Sho 62-211368 (JP, A) JP-A-57-197875 (JP, A) JP-A-59-161812 (JP, A) JP-A-58-132920 (JP, A) JP-A-61-1025 (JP, A) A) JP-A-59-131515 (JP, A) JP-A-62-274627 (JP, A) JP-A-62-136573 (JP, A) JP-A-1-130533 (JP, A)
Claims (2)
電極を配設し、前記アノード電極に薄膜形成用基板を取
り付け、前記両電極間の電界により前記両電極間に供給
される原料ガスをプラズマ化し、前記基板にプラズマ化
した前記原料ガス成分からなる薄膜を形成する薄膜形成
方法において、 前記カソード電極側から前記両電極間に前記原料ガスを
供給し、前記カソード電極の外側に設けた磁界形成手段
の形成磁界により前記原料ガスのプラズマを閉じ込め、
前記反応室に連通した予備分解室において非成膜性の反
応促進ガスを分解して活性種を生成し、前記活性種を前
記基板の近傍に導入することを特徴とする薄膜形成方
法。A cathode electrode and an anode electrode are provided in parallel with a reaction chamber, a substrate for forming a thin film is attached to the anode electrode, and a raw material gas supplied between the two electrodes by an electric field between the two electrodes is subjected to plasma. Forming a thin film comprising the raw material gas component which has been converted into plasma on the substrate, wherein the raw material gas is supplied between the two electrodes from the cathode electrode side, and a magnetic field formed outside the cathode electrode is formed. Confining the plasma of the source gas by the forming magnetic field of the means,
A method for forming a thin film, comprising: decomposing a non-film-forming reaction promoting gas in a preliminary decomposition chamber communicating with the reaction chamber to generate active species; and introducing the active species to a vicinity of the substrate.
電界を形成し、磁界形成手段を電磁石により構成して前
記電磁石の形成磁界の強度を可変にしたことを特徴とす
る請求項記載の薄膜形成方法。2. A thin film forming method according to claim 1, wherein a high-frequency electric field is formed between the cathode electrode and the anode electrode, and the magnetic field forming means is constituted by an electromagnet to vary the intensity of the magnetic field formed by the electromagnet. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067960A JP2739336B2 (en) | 1989-03-20 | 1989-03-20 | Thin film formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067960A JP2739336B2 (en) | 1989-03-20 | 1989-03-20 | Thin film formation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02246212A JPH02246212A (en) | 1990-10-02 |
| JP2739336B2 true JP2739336B2 (en) | 1998-04-15 |
Family
ID=13360045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1067960A Expired - Fee Related JP2739336B2 (en) | 1989-03-20 | 1989-03-20 | Thin film formation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2739336B2 (en) |
-
1989
- 1989-03-20 JP JP1067960A patent/JP2739336B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02246212A (en) | 1990-10-02 |
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