JP2690664B2 - Ceramic heater - Google Patents
Ceramic heaterInfo
- Publication number
- JP2690664B2 JP2690664B2 JP4216931A JP21693192A JP2690664B2 JP 2690664 B2 JP2690664 B2 JP 2690664B2 JP 4216931 A JP4216931 A JP 4216931A JP 21693192 A JP21693192 A JP 21693192A JP 2690664 B2 JP2690664 B2 JP 2690664B2
- Authority
- JP
- Japan
- Prior art keywords
- heater
- wafer
- terminals
- heating element
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000919 ceramic Substances 0.000 title claims description 54
- 238000010438 heat treatment Methods 0.000 claims description 46
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、盤状のセラミック部材
に抵抗発熱体を埋設するとともに、この抵抗発熱体に電
力供給用の端子を一体に形成したウェハー加熱用のセラ
ミックスヒーターに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic heater for heating a wafer in which a resistance heating element is embedded in a plate-shaped ceramic member and terminals for power supply are integrally formed on the resistance heating element. .
【０００２】[0002]
【従来の技術】従来から、セラミックスヒーターを使用
した半導体ウェハー加熱装置は種々のものが知られてお
り、半導体製造用の熱ＣＶＤ又はＰＶＤ装置におけるウ
ェハー加熱に使用されている。図３は、半導体製造用の
熱ＣＶＤ装置に従来のセラミックスヒーターを取り付け
た状態を示す概念図である。図３において、２１は半導
体製造用の熱ＣＶＤに使用される容器、２２は容器２１
内にケース２３およびＯリング２４を介して取り付けら
れたウェハー加熱用の円盤状のセラミックスヒーターで
あり、ウェハー加熱面２２ａ上に加熱すべき例えば４〜
８インチのウェハーＷを設置するよう構成している。2. Description of the Related Art Conventionally, various types of semiconductor wafer heating devices using ceramics heaters are known, and they are used for wafer heating in thermal CVD or PVD devices for semiconductor production. FIG. 3 is a conceptual diagram showing a state in which a conventional ceramics heater is attached to a thermal CVD apparatus for semiconductor manufacturing. In FIG. 3, 21 is a container used for thermal CVD for semiconductor production, and 22 is a container 21.
It is a disk-shaped ceramics heater for heating a wafer, which is mounted inside through a case 23 and an O-ring 24.
An 8-inch wafer W is installed.
【０００３】円盤状のセラミックスヒーター２２は、窒
化珪素のような緻密でガスタイトな盤状のセラミック部
材２７の内部に、タングステン、モリブデン等の金属材
料からなる抵抗発熱体２８をコイル状に埋設した構造を
とっている。抵抗発熱体２８の盤状平面の中央部および
端部には、端子２９、３０を設けるとともに、温度測定
用の熱電対をセットするための非貫通孔である孔３１
や、ウェハー加熱面２２ａとウェハーＷの接触面へヒー
ター裏面からバックサイドガスを流すための貫通孔３２
を所定位置に設けている。容器２１の内部には、バック
サイドガス供給孔２５から貫通孔３２を介してバックサ
イドガスが供給されるとともに、ガス供給孔３６から熱
ＣＶＤ用のガスが供給され、吸引孔２６から真空ポンプ
よりにより内部の雰囲気を排出するよう構成している。
そして、これらの塊状端子２９、３０を介して外部から
電力が供給され、円盤状のセラミックスヒーター２２を
例えば1100℃程度の温度に加熱することができる。The disc-shaped ceramic heater 22 has a structure in which a resistance heating element 28 made of a metal material such as tungsten or molybdenum is embedded in a coil inside a dense and gas-tight disc-shaped ceramic member 27 such as silicon nitride. Is taking. Terminals 29 and 30 are provided at the central portion and the end portion of the plate-shaped plane of the resistance heating element 28, and a hole 31 which is a non-through hole for setting a thermocouple for temperature measurement.
Or a through hole 32 for flowing backside gas from the rear surface of the heater to the contact surface between the wafer heating surface 22a and the wafer W.
Is provided at a predetermined position. Inside the container 21, the backside gas is supplied from the backside gas supply hole 25 through the through hole 32, the gas for thermal CVD is supplied from the gas supply hole 36, and the suction pump 26 is supplied from the vacuum pump. Is configured to discharge the internal atmosphere.
Then, electric power is supplied from the outside through these massive terminals 29 and 30, and the disc-shaped ceramic heater 22 can be heated to a temperature of about 1100 ° C., for example.
【０００４】[0004]
【発明が解決しようとする課題】上述したセラミックス
ヒーター２２においては、端子２９、３０をセラミック
部材２７の盤状平面に設ける必要があるため、まずセラ
ミック部材２７を形成するためのセラミックス原料の約
半分を使用して下型を成形した後、下型の所定位置に端
子２９、３０を埋め込むための孔を機械加工し、端子２
９、３０およびコイル状の抵抗発熱体２８をセットし、
さらに残りのセラミックス原料を投入してプレス加工す
ることによりセラミックスヒーター２２の成形体を作製
している。そのため、孔の深さや角度がズレると端子２
９、３０の位置がズレてしまい、コイル状の抵抗発熱体
２８の端部と端子２９、３０との接続時の位置関係もズ
レてしまい、その部分で断線となる問題があった。In the above-described ceramic heater 22, since it is necessary to provide the terminals 29 and 30 on the plate-shaped plane of the ceramic member 27, first, about half of the ceramic raw material for forming the ceramic member 27 is used. After molding the lower mold using, the holes for embedding the terminals 29, 30 in predetermined positions of the lower mold are machined to
9 and 30 and the coil-shaped resistance heating element 28 are set,
Further, the remaining ceramic raw material is charged and pressed to produce a molded body of the ceramic heater 22. Therefore, if the depth and angle of the holes are misaligned, the terminal 2
There is a problem that the positions of 9 and 30 are displaced, the positional relationship at the time of connecting the ends of the coil-shaped resistance heating element 28 and the terminals 29 and 30 is also displaced, and disconnection occurs at that portion.
【０００５】特に、抵抗発熱体２８と端子２９、３０を
セットした後にさらにプレス加工が必要な従来のセラミ
ックスヒーターでは、上述した問題が起こり易く、三次
元的な端子埋め込み技術が必要で、手間がかかる問題が
あった。さらに、端子２９、３０を盤状平面に設けたた
め、抵抗発熱体２８と塊状端子２９、３０とは三次元的
な配置となり、セラミックスヒーターの厚さが例えば１
０ｍｍ以上と厚くなる問題あった。また、端子２９、３
０がセラミックスヒーターの盤状平面に設けられている
ため、電極も盤状平面にしか設定できず、ウェハー加熱
面を一方にしか設けられない問題もあった。さらに、端
子２９、３０がバックサイドガス気流中にあり、バック
サイドガス供給孔２５より供給されるバックサイドガス
の圧力、流量が、ウェハーＷのウェハー加熱面への着脱
により変動する環境下では、端子間２９と３０又は端子
２９、３０とケース２３間の放電が発生することが多い
という問題があった。Particularly, in the conventional ceramics heater in which the resistance heating element 28 and the terminals 29 and 30 are set and further press working is required, the above-mentioned problems are apt to occur and a three-dimensional terminal embedding technique is required, which is troublesome. There was such a problem. Further, since the terminals 29 and 30 are provided on the plate-shaped plane, the resistance heating element 28 and the lumped terminals 29 and 30 are arranged three-dimensionally, and the thickness of the ceramic heater is, for example, 1 or less.
There was a problem that it became thicker than 0 mm. Also, terminals 29, 3
Since 0 is provided on the plate-shaped plane of the ceramic heater, the electrodes can be set only on the plate-shaped plane, and there is a problem that the wafer heating surface is provided on only one side. Further, in an environment in which the terminals 29 and 30 are in the backside gas flow and the pressure and flow rate of the backside gas supplied from the backside gas supply hole 25 fluctuate due to attachment / detachment of the wafer W to / from the wafer heating surface, There is a problem in that discharge between terminals 29 and 30 or between terminals 29 and 30 and case 23 often occurs.
【０００６】本発明の目的は上述した課題を解消して、
成形時の抵抗発熱体と端子との接続の問題がないととも
に肉厚を薄くすることができるセラミックスヒーターを
提供しようとするものである。An object of the present invention is to solve the above-mentioned problems,
An object of the present invention is to provide a ceramics heater that does not have a problem of connection between a resistance heating element and a terminal during molding and can be thinned.
【０００７】[0007]
【課題を解決するための手段】本発明のセラミックスヒ
ーターは、ウェハーを直接設置して加熱するためのウェ
ハー加熱面を有する、緻密でガスタイトな盤状のウェハ
ー加熱用セラミック部材内部に、抵抗発熱体を埋設し、
この抵抗発熱体に電力供給用の塊状端子を一体形成した
構造の盤状のセラミックヒーターにおいて、前記塊状端
子を盤状のセラミック部材の側面に設けるとともに、ヒ
ーター裏面からバックサイドガスを流す貫通孔をセラミ
ック部材に設け、さらにヒーターの肉厚を１０ｍｍを越
えない厚さとしたことを特徴とするものである。The ceramic heater of the present invention comprises a resistance heating element inside a dense, gas-tight, disk-shaped ceramic member for heating a wafer, which has a wafer heating surface for directly mounting and heating the wafer. Buried,
In the board-shaped ceramic heater having a structure in which a lumped terminal for power supply is integrally formed with the resistance heating element, the lumped terminal is provided on a side surface of the board-shaped ceramic member, and a through hole for flowing backside gas from the back surface of the heater is formed. It is characterized in that the heater is provided on the ceramic member and the wall thickness of the heater does not exceed 10 mm.
【０００８】[0008]
【作用】上述した構成において、塊状端子を側面に設け
ることにより、コイル状の抵抗発熱体と同一平面上に塊
状端子を埋設できるため、従来のように下型を成形後抵
抗発熱体と端子とをセットして上型を成形する場合で
も、容易にセラミックスヒーターの成形をすることがで
きる。また、塊状端子をセラミックスヒーターの側面に
したため、ヒーターの肉厚を例えば従来１０ｍｍ以上必
要だったのを５ｍｍ程度まで薄くすることができるとと
もに、電極も側面に設置でき、ウェハー加熱面として表
裏関係なく使用することができる。また、ガス気流中よ
り端子部を隔離することができ、ガス気流変化による放
電を防止することができる。In the above structure, by providing the lump terminals on the side surface, the lump terminals can be embedded on the same plane as the coil-shaped resistance heating element. Even when the mold is set to mold the upper die, the ceramic heater can be easily molded. Further, since the lumped terminals are provided on the side surface of the ceramics heater, the wall thickness of the heater can be reduced to about 5 mm, which was conventionally required to be 10 mm or more, and the electrodes can be installed on the side surface, so that the wafer heating surface can be used on both sides. Can be used. In addition, the terminal portion can be isolated from the gas flow, and discharge due to changes in the gas flow can be prevented.
【０００９】[0009]
【実施例】図１は本発明のセラミックスヒーターの一例
の構成を示す図であり、図１（ａ）はその平面図を、図
１（ｂ）はＡ−Ａ線に沿った断面図を示す。なお、説明
の都合上、図１（ａ）に示す平面図では実際に見えない
コイル状の抵抗発熱体の中心線の軌跡を実線で示すとと
もに、図１（ｂ）に示す断面図では抵抗発熱体の素線の
断面が見えるはずであるがそれに代えて抵抗発熱体のコ
イル形状を示している。図１において、１は窒化珪素等
のような緻密でガスタイトな無機質材料からなる盤状の
ウェハー加熱用セラミック部材、２はセラミック部材１
の内部に埋設したタングステン、モリブデン等の金属材
料からなるコイル状の抵抗発熱体、３、４、５は抵抗発
熱体に接しセラミック部材１の側面に一体に形成したタ
ングステン、モリブデン等の金属材料からなる電力供給
用の塊状端子、６はヒーター裏面からガスを流すための
貫通孔、７は温度測定用の熱電対をセットするための非
貫通孔である。1 is a diagram showing the structure of an example of a ceramic heater of the present invention, FIG. 1 (a) is a plan view thereof, and FIG. 1 (b) is a sectional view taken along the line AA. . For convenience of explanation, the solid line indicates the locus of the center line of the coil-shaped resistance heating element that cannot be actually seen in the plan view shown in FIG. 1A, and the resistance heating in the sectional view shown in FIG. Although the cross section of the body wire should be visible, the coil shape of the resistance heating element is shown instead. In FIG. 1, 1 is a plate-shaped wafer heating ceramic member made of a dense and gas-tight inorganic material such as silicon nitride, and 2 is a ceramic member 1.
Coil-shaped resistance heating elements 3, 4 and 5 made of a metal material such as tungsten and molybdenum embedded inside are formed of a metal material such as tungsten and molybdenum which is integrally formed on the side surface of the ceramic member 1 in contact with the resistance heating element. Is a lumped terminal for supplying electric power, 6 is a through hole for flowing gas from the back surface of the heater, and 7 is a non-through hole for setting a thermocouple for temperature measurement.
【００１０】図１に示す実施例では、電力供給用の３個
の塊状端子のうち、塊状端子３をコモン、塊状端子４を
インナー、塊状端子５をアウターとし、コモン塊状端子
３とインナー塊状端子５との間に電力を供給することに
より内部の抵抗発熱体２の加熱を実施するとともに、コ
モン塊状端子３とアウター塊状端子４との間に電力を供
給することにより外部の抵抗発熱体２の加熱を実施する
２ゾーンヒーターの構成をとっている。また、図１に示
す例では、抵抗発熱体２をなるべく同心円上に埋設する
よう構成して、セラミックスヒーターの均熱性を高める
よう配慮している。In the embodiment shown in FIG. 1, among the three lump terminals for power supply, the lump terminal 3 is the common, the lump terminal 4 is the inner, and the lump terminal 5 is the outer, and the common lump terminal 3 and the inner lump terminal are The internal resistance heating element 2 is heated by supplying electric power between the external resistance heating element 2 and the common mass terminal 3 and the outer mass terminal 4. It has a two-zone heater configuration for heating. Further, in the example shown in FIG. 1, the resistance heating element 2 is configured so as to be buried in concentric circles as much as possible so as to improve the thermal uniformity of the ceramic heater.
【００１１】上述した構造の本発明のセラミックスヒー
ターは、以下のような方法で製造されていた。まず、窒
化珪素等のセラミックス原料をプレス成形して成形体を
得る。プレス成形にあたっては、まずプレス成形用の下
型中にセラミックス原料を半分充填し、セラミック部材
１の下半分となる成形体をプレス成形する。次に、その
成形体上に、金属製の塊状端子３、４、５を加熱圧着に
より取り付けたコイル上の発熱抵抗体２を位置決めして
セットし、残りのセラミックス原料を充填する。その
後、上型を使用してプレスして最終成形体を得ていた。
次に、得られた成形体を所定の条件で焼成した後、セラ
ミック部材１に発熱抵抗体２を避けて、温度測定用の熱
電対をセットするための孔７やヒーター裏面よりガスを
流すための貫通孔６を例えば機械加工により形成してい
た。The ceramic heater of the present invention having the above-mentioned structure was manufactured by the following method. First, a ceramic raw material such as silicon nitride is press-molded to obtain a molded body. In press molding, first, a ceramic raw material is half-filled in a lower mold for press molding, and a molded body to be the lower half of the ceramic member 1 is press molded. Next, on the molded body, the heating resistor 2 on the coil to which the metallic lump terminals 3, 4, 5 are attached by thermocompression bonding is positioned and set, and the remaining ceramic raw material is filled. Then, it pressed using the upper mold and obtained the final molded object.
Next, after firing the obtained molded body under a predetermined condition, to avoid the heat generating resistor 2 in the ceramic member 1 and to flow gas from the hole 7 for setting a thermocouple for temperature measurement or the back surface of the heater The through-hole 6 was formed by, for example, machining.
【００１２】図２は、半導体製造用の熱ＣＶＤ装置に本
発明のセラミックスヒーターを取り付けた状態を示す概
念図である。図２において、１１は半導体製造用の熱Ｃ
ＶＤに使用される容器、１２は容器１１内にケース１３
およびＯリング１４を介して取り付けられたウェハー加
熱用の図１に示す構造のセラミックスヒーターであり、
ウェハー加熱面１２ａ上に加熱すべき例えば４〜８イン
チのウェハーＷを設置するよう構成している。そして、
図３に示す従来例と同様、容器１１の内部には、バック
サイドガス供給孔１５から貫通孔６を介してバックサイ
ドガスが供給されるとともに、ガス供給孔１７から熱Ｃ
ＶＤ用のガスが供給され、吸引孔１６から真空ポンプに
より内部の雰囲気を排出するよう構成している。FIG. 2 is a conceptual diagram showing a state in which the ceramic heater of the present invention is attached to a thermal CVD apparatus for semiconductor production. In FIG. 2, 11 is heat C for semiconductor manufacturing.
VD container, 12 is case 11 inside container 11
And a ceramic heater having a structure shown in FIG. 1 for heating a wafer, which is attached via an O ring 14.
A wafer W of, for example, 4 to 8 inches to be heated is installed on the wafer heating surface 12a. And
As in the conventional example shown in FIG. 3, the inside of the container 11 is supplied with the backside gas from the backside gas supply hole 15 through the through hole 6, and the heat C from the gas supply hole 17.
The VD gas is supplied, and the internal atmosphere is exhausted from the suction hole 16 by a vacuum pump.
【００１３】図２に示す本発明のセラミックスヒーター
を取り付けた熱ＣＶＤ装置と、図３に示す従来のセラミ
ックスヒーターを取り付けた熱ＣＶＤ装置とを比較する
と、まず本発明のセラミックスヒーターを取り付けた装
置では、端子３、４、５がヒーター側面に設けてあるた
めケーブルを側面に取り出すことができ、従来のものと
比較して装置の薄形化が図れることがわかる。また、バ
ックサイドガス、熱ＣＶＤガスを流す場合、従来のもの
はケーブルが圧力変動が大でガスの流れに影響されてし
まうのに対し、本発明では容器１１内のガスの流れに影
響されない所にケーブルを設置することができる。Comparing the thermal CVD apparatus equipped with the ceramics heater of the present invention shown in FIG. 2 with the thermal CVD apparatus equipped with the conventional ceramics heater shown in FIG. 3, first, in the apparatus equipped with the ceramics heater of the present invention, Since the terminals 3, 4 and 5 are provided on the side surface of the heater, the cable can be taken out to the side surface, and it can be seen that the apparatus can be made thinner than the conventional one. Further, when the backside gas and the thermal CVD gas are flowed, the conventional cable has a large pressure fluctuation and is affected by the gas flow, whereas the present invention does not affect the gas flow in the container 11. A cable can be installed on.
【００１４】[0014]
【発明の効果】以上の説明から明らかなように、本発明
によれば、塊状端子を側面に設けることにより、コイル
状の抵抗発熱体と同一平面上に塊状端子を埋設できるた
め、従来のように下型を成形後抵抗発熱体と塊状端子と
をセットして上型を成形する場合でも、容易にセラミッ
クスヒーターの成形をすることができる。また、塊状端
子をセラミックスヒーターの側面にしたため、ヒーター
の肉厚を例えば従来１０ｍｍ以上必要だったのを５ｍｍ
程度まで薄くすることができるとともに、電極も側面に
設置でき、ウェハー加熱面として表裏関係なく使用する
ことができる。As is apparent from the above description, according to the present invention, by providing the lump terminals on the side surface, the lump terminals can be embedded on the same plane as the coil-shaped resistance heating element. Even when the resistance heating element and the lumped terminals are set after molding the lower mold to mold the upper mold, the ceramic heater can be easily molded. Also, since the lumped terminals are provided on the side surface of the ceramics heater, the thickness of the heater needs to be, for example, 5 mm instead of 10 mm or more.
It can be made as thin as possible, and the electrode can be installed on the side surface, so that it can be used as a wafer heating surface regardless of the front and back sides.
【図１】本発明のセラミックスヒーターの一例の構成を
示す図である。FIG. 1 is a diagram showing a configuration of an example of a ceramic heater according to the present invention.
【図２】本発明のセラミックスヒーターを取り付けた熱
ＣＶＤ装置の一例の構成を示す図である。FIG. 2 is a diagram showing a configuration of an example of a thermal CVD apparatus equipped with a ceramics heater of the present invention.
【図３】従来のセラミックスヒーターを取り付けた熱Ｃ
ＶＤ装置の一例の構成を示す図である。[Figure 3] Heat C with a conventional ceramics heater attached
It is a figure which shows the structure of an example of a VD apparatus.
１ セラミック部材 ２ 抵抗発熱体 ３、４、５ 端子 ６ 貫通孔 ７ 孔 １２ セラミックスヒーター １２ａ ウェハー加熱面 DESCRIPTION OF SYMBOLS 1 Ceramic member 2 Resistance heating element 3, 4, 5 Terminal 6 Through hole 7 Hole 12 Ceramics heater 12a Wafer heating surface
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｂ 3/18 Ｈ０５Ｂ 3/18 // Ｈ０５Ｂ 3/62 3/62 (56)参考文献 特開 昭61−189623（ＪＰ，Ａ) 特開 平４−120722（ＪＰ，Ａ) 実開 昭64−20722（ＪＰ，Ｕ) 実開 昭63−114022（ＪＰ，Ｕ)─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication H05B 3/18 H05B 3/18 // H05B 3/62 3/62 (56) References 61-189623 (JP, A) JP-A-4-120722 (JP, A) Actually opened 64-20722 (JP, U) Actually opened 63-114022 (JP, U)
Claims (1)
ェハー加熱面を有する、緻密でガスタイトな盤状のウェ
ハー加熱用セラミック部材内部に、抵抗発熱体を埋設
し、この抵抗発熱体に電力供給用の塊状端子を一体形成
した構造の盤状のセラミックヒーターにおいて、前記塊
状端子を盤状のセラミック部材の側面に設けるととも
に、ヒーター裏面からバックサイドガスを流す貫通孔を
セラミック部材に設け、さらにヒーターの肉厚を１０ｍ
ｍを越えない厚さとしたことを特徴とするセラミックス
ヒーター。1. A resistance heating element is embedded in a dense and gas-tight board-shaped ceramic member for heating a wafer having a wafer heating surface for directly mounting and heating the wafer, and power is supplied to the resistance heating element. In a plate-shaped ceramic heater having a structure in which a block-shaped terminal is integrally formed, the block-shaped terminal is provided on a side surface of the plate-shaped ceramic member, and a through hole through which a backside gas flows from the back surface of the heater is provided in the ceramic member. Thickness of 10m
Ceramic heater characterized by having a thickness not exceeding m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4216931A JP2690664B2 (en) | 1992-08-14 | 1992-08-14 | Ceramic heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4216931A JP2690664B2 (en) | 1992-08-14 | 1992-08-14 | Ceramic heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0669137A JPH0669137A (en) | 1994-03-11 |
| JP2690664B2 true JP2690664B2 (en) | 1997-12-10 |
Family
ID=16696175
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4216931A Expired - Lifetime JP2690664B2 (en) | 1992-08-14 | 1992-08-14 | Ceramic heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2690664B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5844205A (en) * | 1996-04-19 | 1998-12-01 | Applied Komatsu Technology, Inc. | Heated substrate support structure |
| JP2002025913A (en) * | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | Susceptor for semiconductor manufacturing device and semiconductor manufacturing device using the same |
| JP2002025912A (en) * | 2000-07-04 | 2002-01-25 | Sumitomo Electric Ind Ltd | Susceptor for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus using the same |
| JPWO2002084717A1 (en) * | 2001-04-11 | 2004-08-05 | イビデン株式会社 | Ceramic heater for semiconductor manufacturing and inspection equipment |
| KR20040035281A (en) * | 2002-10-19 | 2004-04-29 | 주성엔지니어링(주) | Molding heater for heating semiconductor substrate |
| KR102670829B1 (en) * | 2023-05-16 | 2024-05-31 | 주식회사 엠엠티 | heater block and apparatus for collecting powders in semiconductor manufacturing process |
| KR102727453B1 (en) * | 2023-07-17 | 2024-11-08 | 주식회사 엠엠티 | By-product collection device |
| KR102802681B1 (en) * | 2023-11-01 | 2025-04-30 | 주식회사 엠엠티 | By-product collection device |
| KR102800969B1 (en) * | 2024-02-20 | 2025-04-30 | 주식회사 엠엠티 | By-product collection device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61189623A (en) * | 1985-02-19 | 1986-08-23 | Fujitsu Ltd | Vapor growth equipment |
| JPS624836A (en) * | 1985-07-01 | 1987-01-10 | Mitsubishi Heavy Ind Ltd | Floating and supporting device for belt-like material |
| JPS62114837A (en) * | 1985-11-13 | 1987-05-26 | Nakata Seisakusho:Kk | Vertical coil splicing device |
| JPH04120722A (en) * | 1990-09-12 | 1992-04-21 | Toshiba Corp | Vapor growth device |
| JP2788153B2 (en) * | 1992-07-23 | 1998-08-20 | 日立造船株式会社 | Plasma CVD equipment |
-
1992
- 1992-08-14 JP JP4216931A patent/JP2690664B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0669137A (en) | 1994-03-11 |
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