JP2692217B2 - Method for manufacturing photovoltaic element - Google Patents
Method for manufacturing photovoltaic elementInfo
- Publication number
- JP2692217B2 JP2692217B2 JP63332865A JP33286588A JP2692217B2 JP 2692217 B2 JP2692217 B2 JP 2692217B2 JP 63332865 A JP63332865 A JP 63332865A JP 33286588 A JP33286588 A JP 33286588A JP 2692217 B2 JP2692217 B2 JP 2692217B2
- Authority
- JP
- Japan
- Prior art keywords
- cdte
- powder
- photovoltaic element
- tecl
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、電源用もしくは、民生用の太陽電池などを
使用可能なCdS/CdTe系の光起電力素子の製造方法に関す
るものである。TECHNICAL FIELD The present invention relates to a method for manufacturing a CdS / CdTe-based photovoltaic element that can be used as a power source or a consumer solar cell.
従来の技術 CdS/CdTe系光起電力素子のCdTeもしくはCdTeを主成分
とする焼結膜に対して、このCdTe焼結膜形成の融剤とし
て、CdTeペースト中に従来はCdCl2を添加していた（特
公昭58−118167号公報）。Conventional technology For CdTe of CdS / CdTe photovoltaic devices, or CdTe or a sintered film containing CdTe as the main component, CdCl 2 was conventionally added to the CdTe paste as a flux for forming this CdTe sintered film ( Japanese Patent Publication No. 58-118167).
発明が解決しようとする課題 CdTeペースト中に融剤としてCdCl2を添加してCdTe焼
結膜を形成した場合、CdTe焼結膜の抵抗が高く、従って
太陽電池のシリーズ抵抗も高く、変換効率を向上する手
段として問題があった。When the CdTe sintered film is formed by adding CdCl 2 as a flux in the CdTe paste, the resistance of the CdTe sintered film is high, and therefore the series resistance of the solar cell is also high, which improves the conversion efficiency. There was a problem as a means.
本発明は、かかる点に鑑みてなされたもので、CdTeペ
ースト中に融剤としてTeCl4を添加することによりCdCl2
の融剤よりも太陽電池の変換効率を向上させるものであ
る。The present invention has been made in view of such a point, and by adding TeCl 4 as a flux in CdTe paste, CdCl 2
It improves the conversion efficiency of the solar cell more than the flux of the above.
課題を解決するための手段 本発明は上記問題点を解決するため、CdTeの融剤とし
てTeCl4を0.3〜1.0重量％添加して、得られたCdTe焼結
膜の抵抗を低下させると同時にCdTe焼結膜中にアクセプ
ターとしてTeを形成させ太陽電池の電圧向上をし、変換
効率を向上させるものである。Means for Solving the Problems In order to solve the above problems, the present invention adds 0.3 to 1.0% by weight of TeCl 4 as a flux of CdTe to reduce the resistance of the obtained CdTe sintered film and at the same time perform CdTe firing. By forming Te as an acceptor in the conjunctiva, the voltage of the solar cell is improved and the conversion efficiency is improved.
作用 本発明による光起電力素子の製造方法によれば、CdTe
の融剤として、TeCl4を使うことにより、太陽電池のシ
リーズ抵抗を低下させFF向上を図りさらに開放電圧（Vo
c）を向上し、変換効率を向上させ、特性を安定化させ
る作用がある。Effects According to the method for manufacturing a photovoltaic element according to the present invention, CdTe
By using TeCl 4 as a fluxing agent, the series resistance of the solar cell is reduced, FF is improved, and the open circuit voltage (Vo
It has the effects of improving c), improving the conversion efficiency, and stabilizing the characteristics.
実施例 以下本発明の実施例について図面をもとに説明する。Embodiments Embodiments of the present invention will be described below with reference to the drawings.
CdS粉末に融剤としてCdCl2を10重量％，プロピレング
リコールを20〜30重量％加えてCdSペーストを作り、こ
れを第１図に示したガラス基板上１に印刷、乾燥，焼成
し、CdS焼結膜２を形成する。次にCd粉末はTe粉末に粘
結剤（プロピレングリコール等）を加えたペーストもし
くはCd粉末とTe粉末の粉砕粉に粘結剤を加えたペースト
に、融剤としてTeCl4を0.3〜1.0重量％加えてこのペー
ストを、上記CdS焼結膜上にスクリーン印刷した。乾燥
後不活性ガス雰囲気中で焼成し、CdTe焼結膜３を得た。
次にこのCdTe焼結膜上にカーボンペーストを印刷乾燥し
て300〜500℃に保った微量の酸素を含む不活性雰囲気中
で焼結を行ない、カーボン膜４を形成する。次にCdS焼
結膜２上およびカーボン膜４上に、それぞれオーミック
電極をなすAgIn5を印刷し、乾燥して電極を形成した。
このようにして太陽電池素子を完成した。10% by weight of CdCl 2 and 20 to 30% by weight of propylene glycol as a flux were added to CdS powder to prepare a CdS paste, which was printed, dried and fired on the glass substrate 1 shown in FIG. The conjunctiva 2 is formed. Next, the Cd powder is a paste obtained by adding a binder (such as propylene glycol) to the Te powder or a paste obtained by adding the binder to the ground powder of the Cd powder and the Te powder, and 0.3 to 1.0 wt% of TeCl 4 as a flux. In addition, this paste was screen printed on the CdS sintered film. After drying, it was baked in an inert gas atmosphere to obtain a CdTe sintered film 3.
Next, a carbon paste is printed and dried on this CdTe sintered film and sintered in an inert atmosphere containing a slight amount of oxygen kept at 300 to 500 ° C. to form a carbon film 4. Next, AgIn5 forming ohmic electrodes was printed on the CdS sintered film 2 and the carbon film 4, respectively, and dried to form electrodes.
Thus, the solar cell element was completed.
この様にして得られた光起電力素子の特性は、第２
図，第３図，第４図に示している。第２図は、太陽光下
での開放電圧を、従来の融剤CdCl2の特性を１として比
率で示している。TeCl4の添加量が0.5〜0.7重量％でピ
ークがあることがわかる。第３図は、太陽光下でのFF値
を示している。従来の融剤CdCl2の特性を１として比率
で示している。TeCl40.5重量％でピークがあるのがわか
る。第４図は、太陽光下でPmaxを従来の融剤CdCl2の特
性を１として比率で示している。TeCl4の添加量が0.5重
量％でピークになっているのがわかる。The characteristics of the photovoltaic element thus obtained are
This is shown in FIGS. 3, 3 and 4. FIG. 2 shows the open circuit voltage under sunlight with the characteristic of the conventional flux CdCl 2 as 1. It can be seen that there is a peak when the amount of TeCl 4 added is 0.5 to 0.7% by weight. FIG. 3 shows the FF value under sunlight. The characteristics of the conventional fluxing agent CdCl 2 are shown as a ratio with 1 being the characteristic. It can be seen that there is a peak at 0.5% by weight of TeCl 4 . FIG. 4 shows the ratio of P max under sunlight with the characteristic of the conventional fluxing agent CdCl 2 being 1. It can be seen that the amount of TeCl 4 added reaches a peak at 0.5% by weight.
発明の効果 本発明は、CdTeペースト中に融剤としてTeCl4を添加
することにより、CdTe膜をＰ形化すると同時に開放電圧
を向上させシリーズ抵抗を低下させ、光起電力素子の変
換効率を向上，安定させる効果が得られた。Effect of the Invention The present invention improves the conversion efficiency of a photovoltaic device by adding TeCl 4 as a fluxing agent to a CdTe paste to make the CdTe film P-type and at the same time improve the open circuit voltage and reduce the series resistance. , The stabilizing effect was obtained.
第１図はCdS/CdTe系光起電力素子の断面図、第２図はCd
Te焼結膜の融剤としてCdCl2とTeCl4を使った時の開放電
圧（Voc）の比較図、第３図はCdTe焼結膜の融剤としてC
dCl2とTeCl4を使った時の曲線率（FF）の比較図、第４
図はCdTe焼結膜の融剤としてCdCl2とTeCl4を使った時の
最大出力（Pmax）の比較図である。 １……ガラス基板、２……CdS焼結膜、３……CdTe焼結
膜、４……Ｃ膜、５……AgIn膜。Figure 1 is a cross-sectional view of a CdS / CdTe photovoltaic element, and Figure 2 is Cd.
Comparison diagram of open circuit voltage (Voc) when CdCl 2 and TeCl 4 are used as flux for Te sintered film, Fig. 3 is C as flux for CdTe sintered film
Comparison diagram of curve ratio (FF) when using dCl 2 and TeCl 4 , No. 4
The figure shows a comparison of the maximum output (P max ) when CdCl 2 and TeCl 4 were used as the flux for the CdTe sintered film. 1 ... Glass substrate, 2 ... CdS sintered film, 3 ... CdTe sintered film, 4 ... C film, 5 ... AgIn film.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 室園 幹夫 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭62−203383（ＪＰ，Ａ) 特開 昭61−187281（ＪＰ，Ａ) 特開 昭61−118334（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Mikio Murozono 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) Reference JP 62-203383 (JP, A) JP 61- 187281 (JP, A) JP-A-61-118334 (JP, A)
Claims (2)
合物半導体の焼結膜を形成し、さらにその上にCd粉末と
Te粉末に粘結剤を加えて混合したCdTeペーストもしく
は、Cd粉末とTe粉末を粉砕して粘結剤を加えて混合した
CdTeペーストをスクリーン印刷し、これを不活性雰囲気
中において焼成して、CdTe焼結膜を形成し、ついで前記
２つの焼結膜に電極を形成して光起電力素子を製造する
に際し、前記のCdTeペースト中にTeCl4を融剤として添
加することを特徴とする光起電力素子の製造方法。1. A sintered film of CdS or a compound semiconductor containing the same is formed on a supporting substrate, and Cd powder and Cd powder are further formed thereon.
CdTe paste obtained by adding a binder to Te powder and mixing, or crushing Cd powder and Te powder and adding a binder and mixing.
When a CdTe paste is screen-printed and fired in an inert atmosphere to form a CdTe sintered film, and then an electrode is formed on the two sintered films to manufacture a photovoltaic element, the CdTe paste is used. A method for manufacturing a photovoltaic element, characterized in that TeCl 4 is added as a flux into the inside.
添加量が、CdTe粉末重量に対し0.3〜1.0重量％である特
許請求の範囲第１項記載の光起電力素子の製造方法。2. The method for producing a photovoltaic element according to claim 1, wherein the amount of the TeCl 4 flux added to the CdTe paste is 0.3 to 1.0% by weight based on the weight of the CdTe powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63332865A JP2692217B2 (en) | 1988-12-27 | 1988-12-27 | Method for manufacturing photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63332865A JP2692217B2 (en) | 1988-12-27 | 1988-12-27 | Method for manufacturing photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02177377A JPH02177377A (en) | 1990-07-10 |
| JP2692217B2 true JP2692217B2 (en) | 1997-12-17 |
Family
ID=18259665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63332865A Expired - Lifetime JP2692217B2 (en) | 1988-12-27 | 1988-12-27 | Method for manufacturing photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2692217B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06163955A (en) * | 1992-11-27 | 1994-06-10 | Matsushita Electric Ind Co Ltd | Substrate for solar cell and solar cell |
-
1988
- 1988-12-27 JP JP63332865A patent/JP2692217B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02177377A (en) | 1990-07-10 |
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