JP2692724B2 - Surface deposition method for metallic materials - Google Patents
Surface deposition method for metallic materialsInfo
- Publication number
- JP2692724B2 JP2692724B2 JP5109944A JP10994493A JP2692724B2 JP 2692724 B2 JP2692724 B2 JP 2692724B2 JP 5109944 A JP5109944 A JP 5109944A JP 10994493 A JP10994493 A JP 10994493A JP 2692724 B2 JP2692724 B2 JP 2692724B2
- Authority
- JP
- Japan
- Prior art keywords
- metal
- film
- present
- based material
- deposition method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007769 metal material Substances 0.000 title claims description 24
- 238000000151 deposition Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- -1 argon ions Chemical class 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000005019 vapor deposition process Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 18
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 239000013077 target material Substances 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000008961 swelling Effects 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 238000002715 modification method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、金属系材料の新規な表
面蒸着方法に関するものである。さらに詳しくいえば、
本発明は、各種機械部品や電子部品の材料として好適な
耐摩耗性及び耐熱性に優れる金属材料を得るために、そ
の表面に効率よく金属を蒸着する方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel surface vapor deposition method for metallic materials. More specifically,
The present invention relates to a method for efficiently depositing a metal on the surface thereof in order to obtain a metal material having excellent wear resistance and heat resistance suitable as a material for various mechanical parts and electronic parts.
【０００２】[0002]
【従来の技術】従来、金属や合金などの金属系材料から
なる薄板を各種機械部品や電子部品などに用いる場合、
要求されることの多い耐摩耗性や耐熱性などを改善する
ため、金属系材料の表面を改質することが通常行われて
いる。この表面改質法としては、金属系材料の表面に異
種金属やセラミックスなど所望の特性を有する薄膜を形
成させる方法が代表的である。この薄膜形成には、真空
蒸着法、スパッタリング法、イオンプレーティング法な
どが用いられているが、これらの方法は形成された薄膜
の密着力が低い、寿命が短い、高融点金属や熱伝導性の
高い金属を成膜しにくいなどの欠点がある。2. Description of the Related Art Conventionally, when a thin plate made of a metal-based material such as metal or alloy is used for various machine parts or electronic parts,
In order to improve wear resistance and heat resistance, which are often required, the surface of a metal-based material is usually modified. A typical example of the surface modification method is a method of forming a thin film having desired characteristics such as a dissimilar metal or ceramics on the surface of a metal-based material. The vacuum deposition method, sputtering method, ion plating method, etc. are used to form this thin film, but these methods have low adhesion, short life, high melting point metal and thermal conductivity. There is a drawback that it is difficult to form a high metal.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、このような
従来の金属系材料の表面改質法のもつ欠点を克服し、耐
摩耗性及び耐熱性に優れ、かつこれらの特性を長期間維
持しうる金属系材料を与える金属系材料の表面蒸着方法
を提供することを目的としてなされたものである。DISCLOSURE OF THE INVENTION The present invention overcomes the drawbacks of the conventional surface modification methods for metallic materials, has excellent wear resistance and heat resistance, and maintains these characteristics for a long period of time. The present invention has been made for the purpose of providing a method for surface-depositing a metal-based material that provides a possible metal-based material.
【０００４】[0004]
【課題を解決するための手段】本発明者らは、前記した
好ましい特徴を有する金属系材料の表面蒸着方法を開発
するために種々研究を重ねた結果、金属系材料表面に先
ず希ガスイオンを注入してプレスパッタリング処理を行
ったのち、ターゲットにエキシマレーザを照射しレーザ
アブレーション現象を利用して蒸着成膜を行うことによ
り、その目的を達成しうることを見出し、この知見に基
づいて本発明をなすに至った。Means for Solving the Problems The present inventors have conducted various studies to develop a surface vapor deposition method for a metal-based material having the above-mentioned preferable characteristics, and as a result, first, a rare gas ion was first formed on the surface of the metal-based material. After injecting and performing a pre-sputtering process, it was found that the target can be achieved by irradiating the target with an excimer laser and performing vapor deposition film formation by utilizing the laser ablation phenomenon, and based on this finding, the present invention Came to make.
【０００５】すなわち、本発明は、金属又は合金から成
る金属系材料の表面にエキシマレーザを用いて蒸着処理
し、金属被膜を形成するに当り、その処理に先立って希
ガスイオンによるプレスパッタリング処理を行うことを
特徴とする金属系材料の表面蒸着方法を提供するもので
ある。That is, according to the present invention, when a metal film is formed on a surface of a metal material made of a metal or an alloy by using an excimer laser to form a metal film, a pre-sputtering process using rare gas ions is performed prior to the process. The present invention provides a method for surface-depositing a metal-based material, which is characterized in that it is performed.
【０００６】本発明方法が適用される金属系材料につい
ては、特に制限はなく、例えば鉄、ニッケル、アルミニ
ウム、シリコン、ゲルマニウムなどの金属、ステンレス
鋼、炭素鋼、アルミニウム合金などの合金などが用いら
れる。The metal material to which the method of the present invention is applied is not particularly limited, and for example, metals such as iron, nickel, aluminum, silicon and germanium, alloys such as stainless steel, carbon steel and aluminum alloys can be used. .
【０００７】本発明方法において金属系材料に施される
蒸着処理は、ターゲットにエキシマレーザを照射するス
パッタリング処理が用いられる。As the vapor deposition treatment applied to the metallic material in the method of the present invention, a sputtering treatment for irradiating a target with an excimer laser is used.
【０００８】本発明方法においては、この蒸着処理に先
立って、金属系材料に対し、希ガスイオンによるプレス
パッタリング処理を行うことが必要である。In the method of the present invention, it is necessary to perform a pre-sputtering treatment with a rare gas ion on the metallic material prior to the vapor deposition treatment.
【０００９】このプレスパッタリング処理は、例えば金
属系材料を配設した真空容器内に希ガスを導入し、アー
ク放電などにより希ガスをイオン化し、生じた希ガスイ
オンを金属系材料に注入することによって行われる。こ
の希ガスとしては、アルゴン、クリプトン、キセノン、
ネオンなどが用いられる。In this pre-sputtering process, for example, a rare gas is introduced into a vacuum container in which a metallic material is arranged, the rare gas is ionized by arc discharge, and the generated rare gas ions are injected into the metallic material. Done by As the rare gas, argon, krypton, xenon,
Neon or the like is used.
【００１０】次いで、本発明方法においては、このよう
に前処理された金属系材料の表面にターゲットにエキシ
マレーザを照射し、レーザアブレーション現象を利用し
た金属被膜が形成される。Next, in the method of the present invention, the target is irradiated with an excimer laser on the surface of the metal-based material thus pretreated to form a metal coating film utilizing the laser ablation phenomenon.
【００１１】この際に用いられるターゲット用金属につ
いては特に制限はなく、例えばＡｌ、Ｓｉ、Ｔｉ、Ｖ、
Ｃｒ、Ｆｅ、Ｃｏ、Ｎｉ、Ｃｕ、Ｇｅ、Ｚｒ、Ｎｂ、Ｍ
ｏ、Ｒｕ、Ｒｈ、Ｐｄ、Ａｇ、Ｈｆ、Ｔａ、Ｗ、Ｒｅ、
Ｏｓ、Ｉｒ、Ｐｔ、Ａｕなどの金属が用いられる。ま
た、ターゲットを回転させるとレーザ照射部を移動させ
ることができるため、局部過熱を防止することができ
る。エキシマレーザの励起種としては、例えばＡｒＦ、
ＫｒＦ、ＸｅＦ、ＸｅＣｌなどが用いられる。There is no particular limitation on the target metal used at this time. For example, Al, Si, Ti, V,
Cr, Fe, Co, Ni, Cu, Ge, Zr, Nb, M
o, Ru, Rh, Pd, Ag, Hf, Ta, W, Re,
Metals such as Os, Ir, Pt and Au are used. Moreover, since the laser irradiation unit can be moved by rotating the target, local overheating can be prevented. The excitation species of the excimer laser include, for example, ArF,
KrF, XeF, XeCl or the like is used.
【００１２】次に本発明の好適な実施態様の１例を添付
図面に従って説明すると、図１は本発明方法を実施する
ための装置の１例であって、内部を真空に保持するため
の排気系２を有する真空容器１内には、イオンビーム４
を被加工物８に注入するためのイオンビーム発生装置
３、エキシマレーザ５を集光するためのレンズ６、エキ
シマレーザにより照射されるターゲット物質７が設置さ
れている。An example of a preferred embodiment of the present invention will now be described with reference to the accompanying drawings. FIG. 1 shows an example of an apparatus for carrying out the method of the present invention, which is an exhaust for maintaining a vacuum inside. An ion beam 4 is placed in a vacuum chamber 1 having a system 2.
An ion beam generator 3 for injecting the laser beam into a workpiece 8, a lens 6 for focusing the excimer laser 5, and a target material 7 irradiated by the excimer laser are installed.
【００１３】まず、真空容器１内に金属系材料の被加工
物８を装着したのち、排気系２で真空容器内の真空度を
５×１０−６Ｔｏｒｒ程度まで排気後、アルゴンを流入
し、イオンビーム発生装置３によりアルゴンをイオン化
して、被加工物８に注入する。次いで、エキシマレーザ
５をターゲット物質７に照射して、ターゲット物質７を
蒸発させ、被加工物８に蒸着させる。このようにして、
金属系材料の表面に金属、合金などの被膜が密着性よく
形成される。First, a workpiece 8 made of a metallic material is mounted in the vacuum container 1, and after exhausting the vacuum degree in the vacuum container to about 5 × 10 −6 Torr by the exhaust system 2, argon is introduced, Argon is ionized by the ion beam generator 3 and injected into the workpiece 8. Next, the target material 7 is irradiated with the excimer laser 5 to evaporate the target material 7 and deposit it on the workpiece 8. In this way,
A coating film of metal, alloy or the like is formed on the surface of the metal-based material with good adhesion.
【００１４】[0014]
【発明の効果】本発明方法によれば、金属系材料表面
に、密着性のよい、耐摩耗性や耐熱性に優れた異種金属
や被膜が形成され、かつこれらの特性を長時間保持する
ことができ、例えば機械部品や電子部品などの材料とし
て好適に利用しうる。According to the method of the present invention, a dissimilar metal or coating having good adhesion and excellent wear resistance and heat resistance is formed on the surface of a metallic material, and these characteristics are maintained for a long time. Therefore, it can be suitably used as a material for machine parts and electronic parts, for example.
【００１５】[0015]
【実施例】次に実施例によって本発明をさらに詳細に説
明するが、本発明はこの例によってなんら限定されるも
のではない。The present invention will be described in more detail by way of examples, which should not be construed as limiting the invention thereto.
【００１６】実施例１ 図１に示す装置を用いた。まず、真空容器１内の真空度
を５×１０−６Ｔｏｒｒ程度まで排気後、アルゴンガス
を流入させたのち、イオンビーム発生装置３を用い、ア
ーク放電させてアルゴンガスをイオン化し、２ＫＶの高
電圧でイオンを加速してＳＵＳ３０４オーステナイト系
ステンレス鋼基材に注入し、表面のプレスパッタリング
を行った。次いで、ＫｒＦエキシマレーザを溶融石英レ
ンズ６で平均エネルギー密度を１パルス当り５．３ＫＪ
／ｍ２に絞り、毎秒１０Ｈｚの繰り返し数でターゲット
物質としてのモリブデン板に照射し、約４０ｍｍ離れた
ステンレス鋼基材表面に厚さ約０．５μｍのモリブデン
被膜を蒸着、形成させた。Example 1 The apparatus shown in FIG. 1 was used. First, after evacuating the degree of vacuum in the vacuum container 1 to about 5 × 10 −6 Torr, and then introducing an argon gas, an arc discharge is performed using the ion beam generator 3 to ionize the argon gas and a high voltage of 2 KV. Ions were accelerated with a voltage to be injected into a SUS304 austenitic stainless steel substrate, and the surface was pre-sputtered. Then, a KrF excimer laser is used with a fused silica lens 6 to obtain an average energy density of 5.3 KJ per pulse.
/ M 2 and irradiating a molybdenum plate as a target material at a repetition rate of 10 Hz per second to deposit a molybdenum film having a thickness of about 0.5 μm on the surface of the stainless steel substrate about 40 mm apart.
【００１７】このようにして形成された被膜の表面状態
を顕微鏡写真により図２の右半分に示す。なお、参考の
ため、基材直上に設置した遮蔽板によりイオン注入を阻
止したのち、遮蔽板を取り去って同様に蒸着して成膜し
た場合の表面状態を顕微鏡写真により図２の左半分に示
す。The surface condition of the coating film thus formed is shown in the right half of FIG. 2 by a micrograph. For reference, the surface condition when the ion implantation is blocked by the shield plate placed directly on the substrate, and then the shield plate is removed and vapor deposition is similarly performed to form a film is shown in the left half of FIG. 2 by a micrograph. .
【００１８】この図２の左右を対比すると、前処理とし
てのアルゴンイオン注入を行わない場合、基材から被膜
の膨れや剥離が認められ、形成された被膜の密着性が良
好でないのに対し、前処理としてのアルゴンイオン注入
を行ったのちに成膜した場合、被膜の膨れや剥離が全く
認められない密着性の良好な被膜が形成される。Comparing the left and right of FIG. 2, when the argon ion implantation as the pretreatment is not carried out, swelling or peeling of the coating film is observed from the base material, and the adhesion of the formed coating film is not good. When a film is formed after performing argon ion implantation as a pretreatment, a film with good adhesion is formed in which no swelling or peeling of the film is observed.
【００１９】この被膜のＸ線回折結果を図３に示す。こ
れより、結晶性のよいモリブデン被膜が形成されている
ことが分る。The X-ray diffraction result of this coating is shown in FIG. From this, it can be seen that a molybdenum film having good crystallinity is formed.
【００２０】実施例２ ターゲット物質としてモリブデンに代えてタングステン
を用いた以外は実施例１と同様にして、膨れや剥離が全
く認められない密着性の良好なタングステン被膜を形成
させた。Example 2 A tungsten film having good adhesion and no swelling or peeling was formed in the same manner as in Example 1 except that tungsten was used instead of molybdenum as the target material.
【００２１】実施例３ ターゲット物質としてモリブデンに代えてアルミニウム
を用いた以外は実施例１と同様にして、膨れや剥離が全
く認められない密着性の良好なアルミニウム被膜を形成
させた。Example 3 In the same manner as in Example 1 except that aluminum was used in place of molybdenum as the target material, an aluminum coating film having good adhesion and no swelling or peeling was formed.
【図面の簡単な説明】[Brief description of the drawings]
【図１】 本発明方法を実施するための装置の１例の略
解図。FIG. 1 is a schematic diagram of an example of an apparatus for carrying out the method of the present invention.
【図２】 前処理としてのアルゴンイオン注入の有無に
よる形成被膜表面の金属組織の状態を示す顕微鏡写真。FIG. 2 is a photomicrograph showing the state of the metal structure on the surface of the formed coating film with and without argon ion implantation as a pretreatment.
【図３】 実施例１の形成被膜のＸ線回折図。FIG. 3 is an X-ray diffraction diagram of the formed film of Example 1.
１ 真空容器 ２ 排気系 ３ イオンビーム発生装置 ４ イオンビーム ５ エキシマレーザビーム ６ 集光レンズ ７ ターゲット物質 ８ 被加工物 1 Vacuum Container 2 Exhaust System 3 Ion Beam Generator 4 Ion Beam 5 Excimer Laser Beam 6 Condensing Lens 7 Target Material 8 Workpiece
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内海 明博 香川県高松市花ノ宮町二丁目３番３号 工業技術院四国工業技術試験所内 (72)発明者 松田 純 香川県高松市花ノ宮町二丁目３番３号 工業技術院四国工業技術試験所内 (56)参考文献 特開 平２−129359（ＪＰ，Ａ) 特開 平４−107258（ＪＰ，Ａ) 特開 平２−298259（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Akihiro Utsumi 2-3-3 Hananomiya-cho, Takamatsu-shi, Kagawa Prefectural Institute of Industrial Technology, Shikoku Institute of Industrial Technology (72) Inventor Jun Matsuda 2-chome, Hananomiya-cho, Takamatsu-shi, Kagawa No. 3 Shikoku Institute of Industrial Technology, Industrial Technology Institute (56) Reference JP-A-2-129359 (JP, A) JP-A-4-107258 (JP, A) JP-A-2-298259 (JP, A)
Claims (2)
にエキシマレーザを用いて蒸着処理し、金属被膜を形成
するに当り、その処理に先立って希ガスイオンによるプ
レスパッタリング処理を行うことを特徴とする金属系材
料の表面蒸着方法。1. A pre-sputtering process using rare gas ions is performed prior to the vapor deposition process using an excimer laser on a surface of a metal-based material made of a metal or an alloy to form a metal film. Method for surface deposition of metal-based material.
求項１記載の表面蒸着方法。2. The surface vapor deposition method according to claim 1, wherein the rare gas ions are argon ions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5109944A JP2692724B2 (en) | 1993-04-12 | 1993-04-12 | Surface deposition method for metallic materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5109944A JP2692724B2 (en) | 1993-04-12 | 1993-04-12 | Surface deposition method for metallic materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06299319A JPH06299319A (en) | 1994-10-25 |
| JP2692724B2 true JP2692724B2 (en) | 1997-12-17 |
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ID=14523077
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5109944A Expired - Lifetime JP2692724B2 (en) | 1993-04-12 | 1993-04-12 | Surface deposition method for metallic materials |
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| JP (1) | JP2692724B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008054258A (en) * | 2006-08-28 | 2008-03-06 | Kanagawa Acad Of Sci & Technol | SEMICONDUCTOR ELEMENT, FILTER ELEMENT, COMMUNICATION DEVICE, AND SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0676658B2 (en) * | 1984-06-30 | 1994-09-28 | 株式会社島津製作所 | Sputtering device |
| JPH0751747B2 (en) * | 1988-11-09 | 1995-06-05 | 新日本製鐵株式会社 | Thin film forming method with excellent adhesion |
| JPH04107258A (en) * | 1990-08-29 | 1992-04-08 | Sumitomo Electric Ind Ltd | Production of thin boron nitride film |
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1993
- 1993-04-12 JP JP5109944A patent/JP2692724B2/en not_active Expired - Lifetime
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| Publication number | Publication date |
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| JPH06299319A (en) | 1994-10-25 |
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