JPS6352108B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention is mainly concerned with coating metals, metal carbides, nitrides, oxides, or solid solutions thereof on the surfaces of tools, accessories, etc. in order to improve corrosion resistance, wear resistance, aesthetic appearance, etc. This invention relates to an ion plating device for the purpose of

A conventional ion plating device that has been put into practical use industrially is the so-called HCD, which uses a hollow cathode electron gun and uses the electron gun's high electron density to ionize the evaporated material. An electrode to which a positive potential is applied is provided between the evaporation source and the substrate using a type ion plating device and a normal high voltage/low current type electron gun, and the vapor of the evaporated substance is placed between the evaporation source and the electrode. There are two types of so-called intermediate electrode type ion plating devices that generate a discharge through the ion plating device and ionize the evaporated material, but both of them have insufficient ionization rate of the evaporated material and the adhesion strength of the coating film is weak. On the other hand, compound-coated membranes have the disadvantage that the reaction is insufficient.

Here, to explain the ionization mechanism in the HCD type ion plating apparatus using FIG. 1, using a hollow cathode type electron gun 1, a low accelerating voltage of several tens to several hundreds of V is applied to the evaporated substance 3 in a water-cooled copper crucible 2. It is irradiated with a high current electron beam 4 of several hundred amperes to melt and evaporate it. The evaporated substance, for example titanium vapor 5, collides with electrons when passing through the electron beam 4 with high electron density, dissociating the electrons and becoming positive ions. The disadvantage of ionization in this HCD type ion plating device is that the ionization rate of the evaporated material that evaporates on the side where the electron beam is incident has a high value because the probability of collision with the electron beam is high, but on the opposite side, that is, the side where it is incident. Substances that evaporate on the hypothetical reflection side of the electron beam have a low probability of collision with the electron beam, resulting in a low ionization rate.

On the other hand, to explain the ionization mechanism in an intermediate electrode type ion plating device with reference to FIG. 2, a general electron gun 6 that uses thermionic electrons is used to apply a voltage of several K to tens of KV to the evaporated substance 3 in the water-cooled copper crucible 2. It is melted and evaporated by irradiating it with an electron beam 7 with a low current of several hundred to several thousand mA at a high acceleration voltage. Using the vapor pressure of the vapor 5 of the evaporated substance and thermionic electrons from the irradiation of the electron beam 7, a positive potential of several tens to several hundreds of volts is applied to the intermediate electrode 9 by the DC power supply 8, and the molten surface of the evaporated substance is discharge 10 between and electrode 9
cause it to occur. At this time, the position of the electrode 9 on the opposite side to the incident direction of the electron beam 7, that is, on the hypothetical reflection side of the electron beam, is most effective for generating the discharge 10. Here, since the evaporated material vapor 5 is ionized when passing through the discharge region 10, the ionization rate is small on the incident side of the electron beam and large on the hypothetical reflection side.

The present invention aims to eliminate the drawbacks of these conventional ionization mechanisms and provide an ion plating apparatus equipped with an ionization mechanism that has a high ionization rate and small variations. In a vacuum chamber equipped with a hollow cathode type electron gun, an evaporation source consisting of an evaporated substance in a crucible that is irradiated with an electron beam generated by the electron gun, and an evaporation source consisting of an evaporated substance in a crucible that is irradiated with an electron beam generated by the electron beam, and a It is characterized by consisting of a positive electrode provided and a substrate facing the evaporation source and having a relatively negative or the same potential.

An embodiment of the apparatus of the present invention will be described with reference to FIG.

First, the inside of the vacuum chamber 11 is pumped using the vacuum pump 12.
Evacuate to a high vacuum of ~10×10 ^-3 Pa.

Next, a gas such as argon is introduced from the atmospheric gas supply source 13 through the gas supply pipe 14 to a pressure of about 1 to 10 Pa, and the substrate 15 is supplied with the substrate power source 1.
6, a negative high voltage of 0.5 to 5 KV is applied to generate glow discharge and clean the surface of the substrate. At this time, it may be possible to clean the substrate 15 more effectively by heating the substrate 15 using the heating power source 17 and the heater 18. Further, in some cases, it may be possible to clean the substrate 15 more uniformly by rotating the substrate 15 using the rotation mechanism 19.

Next, the inside of the vacuum chamber 11 is evacuated again using the vacuum pump 12, and the electron gun power source 20 is activated, and argon gas is introduced into the hollow cathode type electron gun 1. An electron beam 4 of ~100 A is generated and irradiated onto the evaporated substance 3 in the water-cooled copper crucible 2. Next, by applying a positive potential of several 10 to several 100 V to the intermediate electrode 9 by the ionization power source 8, a discharge 10 is generated between the melting surface of the evaporated substance 3 and the electrode 9, and the evaporated material is evaporated from the melting surface. The vapor is ionized as it passes through the electron beam 4 or the discharge region 10. Next, the board 1 is turned on by the board power supply 16.
Ion plating is started by applying a negative voltage to 5, introducing a reaction gas from gas supply source 13 through gas supply pipe 14, and opening shutter 21.

In addition, the ionization rate was compared using the current flowing through the substrate when a cemented carbide throwaway chip SNPA432 was used as the substrate 15, titanium was used as the evaporative substance 3, nitrogen was used as the reaction gas, and the voltage applied to the substrate was 30V. The current was 5A for the HCD type and 3A for the intermediate electrode type, whereas the current for the ion plating device of the present invention was
The device of the present invention showed an excellent ion conversion rate, which was as large as 10A.

[Brief explanation of the drawing]

Figure 1 is a principle diagram of a conventional HCD type ion plating apparatus, Figure 2 is a principle diagram of a conventional intermediate electrode type ion plating apparatus, and Figure 3 is a configuration diagram of an embodiment of the ion plating apparatus of the present invention. It is. 1, 6... Electron gun, 2... Crucible, 3... Evaporated substance, 4, 7... Electron beam, 5... Steam, 8...
DC power supply, 9... Intermediate electrode, 10... Discharge, 11
...Vacuum chamber, 12...Vacuum pump, 13...Atmospheric gas supply source, 14...Gas supply pipe, 15...
...Substrate, 16...Substrate power supply, 17...Heating power supply,
18...Heater, 19...Rotation mechanism, 20...
Electron gun power supply, 21... shutter.

Claims (1)

[Scope of Claims] 1. An ion plating device characterized by being equipped with an ionization mechanism consisting of a hollow cathode type electron gun and a positive electrode. 2. In a vacuum chamber equipped with a vacuum pump and an atmospheric gas supply source, there is an evaporation source consisting of a hollow cathode electron gun, an evaporation substance in a crucible that is irradiated with an electron beam generated by the electron gun, and an irradiation direction of the electron beam. Claim 1, characterized in that it comprises a positive electrode provided in a reflective direction assumed to be in relation to , and a substrate facing the evaporation source and having a relatively negative or the same potential. Ion plating equipment.