JP2696965B2 - X-ray spectroscopy - Google Patents
X-ray spectroscopyInfo
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- JP2696965B2 JP2696965B2 JP63186492A JP18649288A JP2696965B2 JP 2696965 B2 JP2696965 B2 JP 2696965B2 JP 63186492 A JP63186492 A JP 63186492A JP 18649288 A JP18649288 A JP 18649288A JP 2696965 B2 JP2696965 B2 JP 2696965B2
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- component
- sample
- characteristic
- concentration
- ray intensity
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Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は多元素試料のX線分光法による定量分析方法
に関する。The present invention relates to a method for quantitative analysis of a multi-element sample by X-ray spectroscopy.
(従来の技術) X線分光法によって定量分析を行う場合、定量しよう
とする元素の濃度既知の幾つかの標準試料を用いて検量
線を作成している。しかし場合によっては定量しようと
する元素の幾種かの濃度既知の標準試料を準備するのが
困難なことがある。このような場合標準試料を用いない
で検量線を作成する方法として、試料に励起用電子線を
入射させたとき目的元素の特性X線が放射されるモデル
を考え、コンピュータによりシミュレーションを行っ
て、目的元素の濃度と特性X線の相対強度との関係を計
算し、例えば目的元素濃度の100%の試料について、特
性X線の実測強度と上記計算による相対強度との比を求
め、この比を上記計算された相対強度に掛けることによ
り、目的元素の濃度と特性X線強度との関係を表わす検
量線を作成する方法が考えられる。この方法によると目
的元素の純品のような比較的入手し安い試料を一種類用
意すればよく、多種の標準試料を準備する場合の困難さ
が解消される。しかしこの方法は実際上二成分系の試料
とか、多成分であっても、一成分を除く他成分の組成比
が既知で、上記一成分のみ定量したいときには適用でき
るが、一般に三成分以上の多元素の試料になると、成分
量の組合せが多様になり、多数の検量線を作成せねばな
らなくて実施困難となる。(Prior Art) When quantitative analysis is performed by X-ray spectroscopy, a calibration curve is created using several standard samples with known concentrations of the element to be quantified. However, in some cases it may be difficult to prepare standard samples with known concentrations of some of the elements to be quantified. In such a case, as a method of creating a calibration curve without using a standard sample, consider a model in which characteristic X-rays of the target element are emitted when an electron beam for excitation is incident on the sample, and perform simulation by a computer. The relationship between the concentration of the target element and the relative intensity of the characteristic X-ray is calculated. For example, for a sample having 100% of the target element concentration, the ratio between the measured intensity of the characteristic X-ray and the relative intensity obtained by the above calculation is determined. By multiplying the calculated relative intensity, a method of creating a calibration curve representing the relationship between the concentration of the target element and the characteristic X-ray intensity can be considered. According to this method, one kind of relatively inexpensive sample such as a pure product of the target element may be prepared, and the difficulty in preparing many kinds of standard samples is eliminated. However, this method can be applied to a two-component sample or a multi-component sample when the composition ratio of other components except one component is known and it is desired to quantify only one component. For elemental samples, combinations of component amounts become diversified, and a large number of calibration curves must be prepared, which makes it difficult to implement.
(発明が解決すようとする課題) 本発明は多元素の試料のX線分光法による定量分析で
シミュレーション法によって検量線を作成する場合、比
較的少数回のシミュレーション演算によって目的を達成
できる方法を提供しようとするものである。(Problem to be Solved by the Invention) The present invention provides a method for achieving a purpose by a relatively small number of simulation calculations when a calibration curve is created by a simulation method in a quantitative analysis of a multi-element sample by X-ray spectroscopy. It is something to offer.
(課題を解決するための手段) 被測定試料の各成分元素の成分番号を1,2,…i,…とし
て各成分元素の特性X線の実測強度Ioiと各成分元素の
一つの標準試料における実測特性X線強度Istiとの比Ko
i=Ioi/Istiによって各成分の第1近似濃度Coiを決め、
上記成分組成を持つ試料を想定して、各成分の特性X線
強度の上記標準試料における各成分の特数X線強度に対
する比K1iをシミュレーション法によって計算し、誤差
率εi=(K1i−Koi)/Koiを求めて、|εi|が大なる方
から二つの成分元素をとり、他成分の濃度は上記第1近
似濃度Coiのままとして、この二成分の濃度を変えてシ
ミュレーションを行い、その二成分について計算による
検量線を作成し、同二成分の前記実測特性X線強度から
上記検量線によって、上記二成分の濃度を求め、先に求
めた各成分濃度において上記二成分濃度を上記検量線に
より求めた濃度に置換した新しい成分組成を各成分の第
2近似濃度C1iとして、上記第1近似濃度Coiについて行
った上記演算をCoiの所をC1iで置き換えて行って再度誤
差率εiを求めると共に各成分の第3近似濃度を求める
と云うように演算を繰返し、このようにして順次求まる
誤差率が予定値以下に達した所で求められている最終近
似濃度を分析値とするようにした。(Means for Solving the Problems) Assuming that the component numbers of the component elements of the sample to be measured are 1, 2,... I,..., The actual measured intensity I o i of the characteristic X-ray of each component element and one standard of each component element the ratio K o between the measured characteristic X-ray intensity Isti in the sample
Determine the first approximate concentration C o i of each component by i = I o i / Isti,
Assuming a sample having the above component composition, the ratio K 1 i of the characteristic X-ray intensity of each component to the characteristic X-ray intensity of each component in the standard sample is calculated by a simulation method, and the error rate εi = (K 1 i−K o i) / K o i, and taking the two component elements from the larger | ε i |, leaving the other component concentration at the first approximate concentration C o i, A simulation is performed by changing the concentration, a calibration curve is created by calculation for the two components, and the concentrations of the two components are obtained from the measured characteristic X-ray intensities of the two components by the calibration curve. In the concentration, the new component composition obtained by replacing the two-component concentration with the concentration determined by the calibration curve is defined as the second approximate concentration C 1 i of each component, and the above calculation performed on the first approximate concentration C o i is performed as C o i. where a and seek again the error rate εi went replaced by a C 1 i of The calculation is repeated so as to obtain the third approximate concentration of each component, and the final approximate concentration obtained when the error rate sequentially obtained below the predetermined value is less than the predetermined value is used as the analysis value. .
(作用) 上述方法によると、被測定試料についての各成分の実
測特性X線強度と各成分につき一種類(成分毎に一つず
つとは限らず、複数成分一試料でもよい)の標準試料に
ついての各成分の特性X線強度との比Koiから単純比率
で各成分の第1近似濃度を決定し、以下第1近似の濃度
を持つ試料を想定してシミュレーション法により各成分
の特性X線強度と上記標準試料における各成分の特性X
線強度との比を計算し、上記実測による各成分の特性X
線強度Koiとの差を求め、差の大なるものにつき、想定
濃度を変えてシミュレーション演算を行って検量線を作
成する。このようにすると、シミュレーション法による
検量線作成時の可変成分が限定されるから、シミュレー
ション演算の回数が大幅に減少でき、後は逐次近似によ
って被測定試料の各成分濃度を決定することができるの
である。(Operation) According to the above-described method, the measured characteristic X-ray intensity of each component of the sample to be measured and one type of each component (the sample is not limited to one for each component but may be a sample of a plurality of components). The first approximate concentration of each component is determined by a simple ratio from the ratio K o i of the characteristic X-ray intensity of each component to the characteristic X-ray intensity. Linear intensity and characteristic X of each component in the above standard sample
Calculate the ratio to the line intensity and obtain the characteristic X
A difference from the line intensity Koi is obtained, and for a large difference, simulation calculation is performed by changing the assumed concentration to create a calibration curve. In this way, the number of variable components at the time of creating a calibration curve by the simulation method is limited, so that the number of simulation calculations can be greatly reduced, and thereafter, the concentration of each component of the sample to be measured can be determined by successive approximation. is there.
(実施例) 第1図は本発明方法を実行する場合の動作のフローチ
ャートである。まず被測定試料につき各成分元素の特性
X線強度Ioiを実測する(イ)。こゝでiは成分番号で
i=1…nである。次に各成分の純品試料につき夫々の
成分の特性X線強度Istiを実測する(ロ)。以上で準備
動作を終わり、Koiを算出(ハ)する。Koiは各成分の試
料中濃度に略比例するが、試料中の共存元素の影響を受
けているので正確には濃度に比例していない。当然ΣKo
iは1にならないが、各成分濃度の第1近似としてCoiを
算出(ニ)する。次にp=oと置いて(ホ)、以下のシ
ミュレーション演算を行う。シミュレーション演算につ
いては後述する。こゝでpは近似の段階を示し、p=o
は第1近似を意味する。(ヘ)のステップで試料の成分
構成をCoiと仮定してシミュレーションにより各成分元
素の決算上の特性X線強度I1iを算出する。次に各成分
の100%試料につきシミュレートを行って各成分純品の
計算上の特性X線強度ISstiを算出(ト)する。これに
より、K1i=I1i/ISstiを算出する(チ)。次に(ハ)の
ステップで求めておいたKoiから誤差率εi=(K1i−Ko
i)/Koiを算出(リ)、このεiの絶対値が所定値Δよ
り大きいか否か調べ(ヌ)、全てのεiがΔより小さい
ときは第1近似のCoiを以って試料の成分構成として分
析動作を終る。通常は全てのεiがΔより小さいことは
ないので、動作は(オ)のステップに移る。(オ)のス
テップでは|εi|の大なる方から二元素k,lをとり、両
元素の濃度変えて(他成分は第1近似の組成比を用い
る)シミュレーションを行い各成分の特性X線強度▲I
p+1+1 i▼を計算する。(Embodiment) FIG. 1 is a flowchart of the operation when the method of the present invention is executed. First, the characteristic X-ray intensity I o i of each component element is actually measured for the sample to be measured (A). Here, i is a component number and i = 1... N. Next, the characteristic X-ray intensity Isti of each component of the pure sample of each component is actually measured (b). Thus, the preparation operation is completed, and Koi is calculated (C). Although Koi is approximately proportional to the concentration of each component in the sample, it is not exactly proportional to the concentration because it is affected by coexisting elements in the sample. Naturally ΣK o
Although i does not become 1, C o i is calculated (d) as the first approximation of each component concentration. Next, with p = o (e), the following simulation calculation is performed. The simulation calculation will be described later. Here, p indicates an approximation stage, and p = o
Means the first approximation. In step (f), the characteristic X-ray intensity I 1 i in terms of the settlement of each component element is calculated by simulation, assuming that the component composition of the sample is Co i. Next, a simulation is performed for a 100% sample of each component, and the calculated characteristic X-ray intensity I S sti of each component pure product is calculated (g). Thus, K 1 i = I 1 i / I S sti is calculated (h). Next, the error rate εi = (K 1 i−K o ) from K o i obtained in step (c).
i) / K o i is calculated (i), it is checked whether or not the absolute value of ε i is larger than a predetermined value Δ (nu). If all ε i are smaller than Δ, the first approximation C o i is used. As a result, the analysis operation is completed as the composition of the sample. Normally, since all εi are not smaller than Δ, the operation shifts to the step (e). In step (e), two elements k and l are taken from the larger | εi |, and a simulation is performed by changing the concentration of both elements (the other components use the first approximate composition ratio) to perform characteristic X-rays of each component. Strength ▲ I
Calculate p + 1 + 1 i ▼.
この計算で元素k,lの濃度範囲は第1近似におけるC
ok,ColによりT=Cok+Colとして、元素kの濃度をCkと
し、元素lの濃度ClをT−Ckとして夫々の元素の濃度0
〜Tの範囲でよく、この範囲で例えば元素kの濃度を3
段階に変えて行うので、シミュレーション演算は全部で
3回となる。この計算によって第2図に示すような検量
線を作成(ワ)する。この検量線を用いて、先に(ハ)
のステップで求まっているKok,Kolから両元素k,lの濃度
C1k,C1lを決定し(カ)、pに1を加え(ヨ)、動作は
(ヘ)のステップに戻る。以上の動作を(ヌ)のステッ
プがONになる迄繰返す。In this calculation, the concentration range of the elements k and l is C in the first approximation.
o k, C o as T = C o k + C o l by l, the concentration of the element k and Ck, the concentration of each of the elements of the concentration Cl of elements l as T-Ck 0
To T. In this range, for example, the concentration of the element k is set to 3
Since the simulation is performed in stages, the simulation calculation is performed three times in total. By this calculation, a calibration curve as shown in FIG. 2 is created (W). Using this calibration curve,
The concentration of K o k, K o both elements from l k, l which has been obtained in the step
C 1 k and C 1 l are determined (f), 1 is added to p (y), and the operation returns to step (f). The above operation is repeated until the step (nu) turns ON.
次にシミュレーション演算について述べる。第3図に
シミュレーション演算のフローチャートを示す。被測定
試料は厚さtとし、それを構成している元素は1からn
までのn種である。これらの元素の濃度の組合せを想定
しこれらの元素の濃度(重量%)をC1,C2…Ci…Cnとし
てシミュレーションを開始する。こゝで添字のiは成分
番号である。試料厚さt,試料を構成している各元素の原
子の電子に対する散乱断面積,イオン化断面積,各元素
の濃度Ci,電子の初期エネルギーEo,終末エネルギー
E′,シミュレーションを行う回数No等をコンピュータ
に入力する(イ)。シミュレーションは例えば1000から
20000個の電子について行う。具体的には一個の電子を
試料に入射させたときの電子の軌跡の追跡演算を行い、
これをNo回繰り返すのである。(イ)のステップでシミ
ュレーション演算に必要なデータおよびパラメータの入
力を終ったら、演算回路N=1とし(ハ)、試料に入射
させた電子の追跡演算を行う(ニ)。この演算は電子が
先の試料内原子との衝突から次の試料内の原子と衝突す
るまでの過程の計算で、先の衝突において、電子がどの
方向に反撥されるかその方向を確率的に決め、次にどの
元素の原子と衝突をするかを下記(1)式により各構成
元素の原子の散乱断面積および各元素の濃度に関係させ
て確率的に決定し、下記(2)式により前記の試料内で
の平均自由行程だけ電子が進行して、上記確率的に決定
された原子に衝突するものとし、この過程におけるエル
ギーの損耗を下記(3)式によって算定すると云う演算
で 但しPiは電子が元素iの原子に衝突する確率で、Piは こゝにAiは元素iの原子量、σiは元素iの原子の電子
に対する散乱断面積で、衝突する電子のエネルギーE
と、試料を構成している各元素の原子番号ziによって決
まり、 但しβiはスクリーニングパラメータで、 である。Next, the simulation calculation will be described. FIG. 3 shows a flowchart of the simulation calculation. The sample to be measured has a thickness t, and its constituent elements are 1 to n.
N types. Assuming a combination of the concentrations of these elements, the simulation is started with the concentrations (% by weight) of these elements as C1, C2... Ci. Here, the subscript i is a component number. The sample thickness t, the scattering cross section of the atoms of each element constituting the sample with respect to the electrons, the ionization cross section, the concentration Ci of each element, the initial energy Eo of the electron, the final energy E ', the number of times of the simulation No, etc. Input to computer (a). Simulation starts at 1000
Performed on 20000 electrons. Specifically, the trajectory calculation of the trajectory of the electron when one electron is incident on the sample is performed,
This is repeated No times. When the input of data and parameters necessary for the simulation calculation is completed in the step (a), the arithmetic circuit N is set to 1 (c), and the tracking operation of the electrons incident on the sample is performed (d). This calculation is a calculation of the process from the collision of an electron with an atom in the sample to the atom in the next sample, and stochastically determines the direction in which the electron is repelled in the previous collision. Then, the atom of which element is to be collided is stochastically determined by the following equation (1) in relation to the scattering cross section of each constituent element atom and the concentration of each element. It is assumed that electrons travel by the mean free path in the sample and collide with the stochastically determined atoms, and the energy consumption in this process is calculated by the following equation (3). Where Pi is the probability that an electron collides with the atom of element i, and Pi is Here, Ai is the atomic weight of element i, σi is the scattering cross section of the atoms of element i for the electrons, and the energy E of the colliding electrons is
And the atomic number zi of each element constituting the sample, Where βi is a screening parameter, It is.
平均自由行程LはÅ単位で 電子が物質内を進行して行くときのエネルギーの損耗は
単位飛距離当り、 但しは試料内の各元素の組成比(重量%)を加味した
原子番号の平均値で =ΣCi・zi 但しΣCi=1 で表される。同様にして、は試料内元素の平均原子
量、ρは試料密度である。The mean free path L is in units of Å The energy loss when electrons travel through a substance is per unit flying distance, However, this is the average value of the atomic numbers in consideration of the composition ratio (% by weight) of each element in the sample, and is represented by = ΣCi · zi where ΣCi = 1. Similarly, is the average atomic weight of the elements in the sample, and ρ is the sample density.
上式の単位はKeV/ÅでJiは元素iのイオン化ポデンシ
ャル(eV)である。The unit of the above equation is KeV / Å, and Ji is the ionization potential (eV) of element i.
追跡計算が終わったら、その演算における前後の衝突
の間の電子の試料表面からの深さ方向の進行距離を前回
までの深さ方向進行距離に加算して現在の電子の試料面
からの深さ位置dを計算(ホ)する。この実施例では次
の(ヘ)のステップで、上記過程で後の衝突における元
素iの特性X線放射確率を計算し、その結果をメモリに
入力する。特性X線の放射確率は電子のエネルギーを
E、元素iの特性X線放射のための励起エネルギーをEi
とすると、vi=E/Eiに関係し、次式で与えられるφiに
比例する。When the tracking calculation is completed, the current depth of the electron from the sample surface by adding the depth travel distance of the electron from the sample surface during the previous and subsequent collisions to the previous depth direction travel distance in the calculation. The position d is calculated (e). In this embodiment, in the next step (f), the characteristic X-ray emission probability of the element i in the subsequent collision in the above process is calculated, and the result is input to the memory. The characteristic X-ray emission probability is E for the electron energy and Ei for the excitation energy for characteristic X-ray emission of element i.
Then, it is related to vi = E / Ei, and is proportional to φi given by the following equation.
このφiを第4図のメモリマップに示すように、メモ
リ内で計算試料の元素iのエリヤにおいて試料面からの
深さdに対応するアドレス内のデータに加算して同アド
レスに格納する。次に電子エネルギーEがE<E′か否
かチェックされる(ト)。E′は電子の終末エネルギー
で今の場合試料中の何れの元素の原子もイオン化できな
い限界エネルギーに設定しておけばよい。このチェック
がNOの場合、電子の試料面からの深さdが<o(表面か
ら飛び出す)か否かチェック(チ)、次にd>t(試料
を透過)か否かチェック(リ)、全てNOであれば動作は
(ニ)に戻り、(ト)(チ)(リ)の何れかのステップ
がNOになる迄同じ動作が繰返される。 As shown in the memory map of FIG. 4, this φi is added to the data at the address corresponding to the depth d from the sample surface in the area of the element i of the calculation sample in the memory and stored at the same address. Next, it is checked whether the electron energy E is E <E '(g). E 'is the terminal energy of the electron, and in this case, may be set to a limit energy at which atoms of any element in the sample cannot be ionized. If this check is NO, it is checked whether or not the depth d of the electrons from the sample surface is <o (protrudes from the surface) (h), and then whether or not d> t (transmits through the sample) (h). If all are NO, the operation returns to (D), and the same operation is repeated until any of the steps (G), (H), and (R) becomes NO.
以上のようにして(ト)(チ)(リ)の何れかのステ
ップがYESになるとそこで一個の電子についての追跡演
算が終わり、NをN+1とし(ル)、新しいNがN>No
か否かチェック(オ)し、Noなら動作は(ハ)のステッ
プに戻って次の電子について上述した演算が行われる。
かくして例えば10000回の演算が行われるとN>Noとな
って(オ)のステップがYESとなり一つの試料について
のモンテカルロシミュレーション演算が完了したことに
なる。こゝまでの動作でメモリ内には各元素毎に試料表
面からの深さに対する第5図に示すような特性X線放射
度数のヒストグラムが形成されているので、最後(ヨ)
のステップで上記メモリ内に形成された各元素の特性X
線放射強度ヒストグラムを試料面からの深さによるX線
の吸収補正を行って夫々積分する。これは厚さtの或る
一つの組成の試料の各元素の特性X線放射強度の相互比
率を示す相対値でこれが前述したI1i,ISsti等である。As described above, when any of the steps (g), (h), and (i) becomes YES, the tracking operation for one electron is completed, N is set to N + 1 (l), and new N is N> No.
It is checked whether or not (e), and if No, the operation returns to step (c) and the above-described calculation is performed for the next electron.
Thus, for example, if 10,000 calculations are performed, N> No, the step (e) becomes YES, and the Monte Carlo simulation calculation for one sample is completed. By the operation up to this point, a histogram of characteristic X-ray radiance as shown in FIG. 5 with respect to the depth from the sample surface is formed for each element in the memory.
Characteristic X of each element formed in the memory in the above step
The X-ray emission intensity histogram is integrated by performing X-ray absorption correction based on the depth from the sample surface. This is a relative value indicating the mutual ratio of the characteristic X-ray emission intensities of the respective elements of a sample having a certain composition having a thickness t, which is the above-mentioned I 1 i, I S sti or the like.
上記実施例では各成分の濃度100%の試料を標準試料
として用いているが、各成分の組成比が判明している試
料が入手できればそれを標準試料として用いることがで
きる。この場合、第1図のフローチャートの(ロ)のス
テップは上記標準試料につき各成分元素の特性X線強度
Istiを測定するものとなり、(ハ)のステップは成分i
の標準試料中における濃度をCstiとして、 Koi=(Ioi/Isti)×Csti となる。In the above embodiment, a sample having a concentration of 100% for each component is used as a standard sample. However, if a sample having a known composition ratio of each component is available, it can be used as a standard sample. In this case, the step (b) in the flow chart of FIG.
Isti is measured, and the step (c) is the component i
The concentration as CSTI in the standard sample of the K o i = (I o i / Isti) × Csti.
また上記実施例では試料面からの深さ別に各成分の特
性X線放射確率を計算しているので、バルク試料だけで
なく、任意厚さの薄膜試料にも適用できる。In the above embodiment, since the characteristic X-ray emission probability of each component is calculated for each depth from the sample surface, the invention can be applied not only to a bulk sample but also to a thin film sample having an arbitrary thickness.
(発明の効果) 多元素試料の各成分を定量するため検量線法を用いる
と、各成分組成比の組合せが多様となるため、多種の標
準試料が必要となり、多種の検量線を作る必要があっ
て、分析操作が甚だ面倒になる上、多種の標準試料その
ものが入手し難い場合が多い。本発明によれば小数の入
手可能な標準試料を必要とするだけで、分析操作の多く
の部分がコンピュータによる計算となり、分析オペレー
タの操作としては被測定試料についての各成分特性X線
強度の測定と少数の標準試料についての各成分の特性X
線の強度測定とコンピュータに演算に必要なパラメータ
を設定する操作だけであり、分析操作も簡単になる。(Effect of the Invention) When a calibration curve method is used to quantify each component of a multi-element sample, the combinations of the component composition ratios become diverse, so that many kinds of standard samples are required, and it is necessary to make many kinds of calibration curves. As a result, the analysis operation is extremely troublesome, and it is often difficult to obtain various standard samples. According to the present invention, only a small number of available standard samples are required, and a large part of the analysis operation is calculated by a computer, and the operation of the analysis operator is to measure each component characteristic X-ray intensity of the sample to be measured. And characteristic X of each component for a small number of standard samples
Only the operation of measuring the intensity of the line and setting the parameters necessary for the calculation in the computer are performed, and the analysis operation is also simplified.
第1図は本発明方法の一実施例を示すフローチャート、
第2図は計算された検量線の一例、第3図は本発明で用
いられるX線放射のシミュレーション演算の一例のフロ
ーチャート、第4図は同シミュレーション演算で用いら
れるメモリのメモリマップ、第5図は上記シミュレーシ
ョン演算で求まる特性X線の試料面からの深さ方向の発
生度数分布図である。FIG. 1 is a flowchart showing one embodiment of the method of the present invention;
2 is an example of a calculated calibration curve, FIG. 3 is a flowchart of an example of an X-ray radiation simulation operation used in the present invention, FIG. 4 is a memory map of a memory used in the simulation operation, and FIG. FIG. 4 is a distribution diagram of the frequency of occurrence of characteristic X-rays obtained from the simulation operation in the depth direction from the sample surface.
Claims (1)
強度I0iと各成分元素の一つの標準試料における実測特
性X線強度Istiとの比K0i=I0i/Istiによって各成分の
第1近似濃度C0iを決め、上記成分組成を持つ試料を想
定して、各成分の特性X線強度の上記標準試料における
各成分の特数X線強度に対する比K1iをシミュレーショ
ン法によって計算し、誤差率εi=(K1i−K0i)/K0iを
求めて、|εi|が大なる方から二つの成分元素をとり、
他成分の濃度は上記第1近似C0iのままとして、この二
成分の濃度を変えてシミュレーションを行い、その二成
分について計算による検量線を作成し、同二成分の前記
実測特性X線強度から上記検量線によって、上記二成分
の濃度を求め、先に求めた各成分濃度において上記二成
分濃度を上記検量線により求めた濃度に置換した新しい
成分組成を第2近似として、この組成を持った想定試料
につき再びシミュレーション演算を行って、各元素の特
性X線強度I1iを算出し、更に上記標準試料について各
成分元素の特性X線強度ISstiをシミュレーション演算
によって求め、これらの結果を用いてK2i=I1i/ISstiを
求め、K2iを前記K1iとし、K1iを前記K0iとして再び前記
誤差率εiを求める所から第2近似の成分組成を求める
所までの演算を行って第3近似の成分組成を算出して再
々度誤差率εiを求めると云う操作をεiが予定値以下
になるまで繰返し、最後に求められた近似成分組成を分
析値とすることを特徴とするX線分光分析法。1. The ratio K 0 i = I 0 i / Isti between the measured intensity I 0 i of the characteristic X-ray of each component element of the sample to be measured and the actually measured characteristic X-ray intensity Isti of one standard sample of each component element. The first approximate concentration C 0 i of each component is determined according to the following formula. Assuming a sample having the above component composition, the ratio K 1 i of the characteristic X-ray intensity of each component to the characteristic X-ray intensity of each component in the standard sample is determined. were calculated by simulation method, seek error rate εi = (K 1 i-K 0 i) / K 0 i, | εi | takes two of the component elements from the person who is large,
The concentration of the other ingredients as remains of the first approximation C 0 i, to simulate changing the concentration of the two components, a calibration curve by calculating its two components, the actual characteristic X-ray intensity of the two-component From the above calibration curve, the concentration of the two components is obtained, and a new component composition obtained by replacing the two component concentration with the concentration obtained by the above calibration curve in each of the component concentrations previously obtained is used as a second approximation, and this composition is obtained. The simulation calculation is again performed for the assumed sample, the characteristic X-ray intensity I 1 i of each element is calculated, and further, the characteristic X-ray intensity I S sti of each component element for the standard sample is obtained by the simulation calculation. Is used to determine K 2 i = I 1 i / I S sti, K 2 i is the above K 1 i, K 1 i is the above K 0 i, and the error rate εi is obtained again. Perform calculations up to where the composition is determined An operation of calculating the third approximate component composition and obtaining the error rate εi again is repeated until εi becomes equal to or less than a predetermined value, and the finally determined approximate component composition is used as an analysis value. Line spectroscopy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63186492A JP2696965B2 (en) | 1988-07-25 | 1988-07-25 | X-ray spectroscopy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63186492A JP2696965B2 (en) | 1988-07-25 | 1988-07-25 | X-ray spectroscopy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0235345A JPH0235345A (en) | 1990-02-05 |
| JP2696965B2 true JP2696965B2 (en) | 1998-01-14 |
Family
ID=16189434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63186492A Expired - Fee Related JP2696965B2 (en) | 1988-07-25 | 1988-07-25 | X-ray spectroscopy |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2696965B2 (en) |
-
1988
- 1988-07-25 JP JP63186492A patent/JP2696965B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0235345A (en) | 1990-02-05 |
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