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JP2734840B2 - Contact type thin film thermistor - Google Patents
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JP2734840B2 - Contact type thin film thermistor - Google Patents

Contact type thin film thermistor

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Publication number
JP2734840B2
JP2734840B2 JP29410491A JP29410491A JP2734840B2 JP 2734840 B2 JP2734840 B2 JP 2734840B2 JP 29410491 A JP29410491 A JP 29410491A JP 29410491 A JP29410491 A JP 29410491A JP 2734840 B2 JP2734840 B2 JP 2734840B2
Authority
JP
Japan
Prior art keywords
pair
glass
film
plate
insulating support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP29410491A
Other languages
Japanese (ja)
Other versions
JPH05135909A (en
Inventor
彪 長井
勝視 佐々田
修治 伊藤
謙三 黄地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP29410491A priority Critical patent/JP2734840B2/en
Publication of JPH05135909A publication Critical patent/JPH05135909A/en
Application granted granted Critical
Publication of JP2734840B2 publication Critical patent/JP2734840B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Thermistors And Varistors (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は対象物表面と機械的に接
触して、その表面温度を検出できる表面温度センサに関
するものであって、特に400〜500℃の高温度まで
使用できる接触型薄膜サーミスタに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface temperature sensor capable of detecting the surface temperature of an object by mechanically contacting the surface of the object, and more particularly to a contact type thin film usable up to a high temperature of 400 to 500.degree. It relates to a thermistor.

【0002】[0002]

【従来の技術】従来、この種の表面温度センサは、図2
に示すように、硝子封止型サーミスタ1素子から成る温
度検知素子にリード線2,2’を接続し、前記硝子封止
型サーミスタ1を金属板3に樹脂4で接着して構成され
る。前記金属板3を対象物の表面にビス止めなどにより
機械的に接触させて、その表面温度を検出していた(例
えば、特公昭60−125535号公報)。
2. Description of the Related Art Conventionally, a surface temperature sensor of this type is shown in FIG.
As shown in FIG. 1, lead wires 2 and 2 ′ are connected to a temperature detecting element composed of a glass-sealed thermistor 1, and the glass-sealed thermistor 1 is bonded to a metal plate 3 with a resin 4. The metal plate 3 is brought into mechanical contact with the surface of the object by screwing or the like, and the surface temperature is detected (for example, Japanese Patent Publication No. 60-125535).

【0003】[0003]

【発明が解決しようとする課題】しかしながら、上記の
ような構成では、硝子封止型サーミスタ素子1が金属板
3に樹脂4で接着されており、樹脂4の耐熱温度は通
常、約200℃以下であるので、最高使用温度も約20
0℃以下に制限されるという問題があった。
However, in the above configuration, the glass-sealed thermistor element 1 is bonded to the metal plate 3 with the resin 4, and the heat-resistant temperature of the resin 4 is usually about 200 ° C. or less. Therefore, the maximum operating temperature is about 20
There is a problem that the temperature is limited to 0 ° C. or lower.

【0004】また、硝子封止型サーミスタ素子1は円筒
状の形状を有するので、金属板3と硝子封止型サーミス
タ素子1の間の熱伝達が悪く、このため熱応答性が遅い
(90%熱応答時間は20sec以上)という問題もあ
った。
Further, since the glass-sealed thermistor element 1 has a cylindrical shape, heat transfer between the metal plate 3 and the glass-sealed thermistor element 1 is poor, so that the thermal response is slow (90%). (The thermal response time is 20 sec or more).

【0005】本発明はかかる従来の問題点を解消するも
ので、従来よりも高耐熱性で、良好な高速応答性にする
ことを目的にしている。
The present invention has been made to solve the above-mentioned conventional problems, and it is an object of the present invention to provide higher heat resistance and better high-speed response than before.

【0006】[0006]

【課題を解決するための手段】上記課題を解決するため
に、本発明の接触型薄膜サーミスタは、薄膜サーミスタ
素子と一対の板状金属リード線と絶縁性支持体から構成
され、前記薄膜サーミスタ素子は平板状アルミナ基板
と、前記平板状アルミナ基板に設けられた一対の貫通口
と、前記平板状アルミナ基板の一方の表面から他の表面
にわたり電気的に導通して、前記貫通口を貫通して配置
された一対の導電性部材と、前記平板状アルミナ基板の
前記一方の表面に前記貫通口を含んで配置された一対の
電極膜と、前記一対の電極膜に積層して配置された感温
抵抗体膜とから構成され、前記一対の板状金属リード線
は前記薄膜サーミスタ素子の前記平板状アルミナ基板の
前記他の表面で前記一対の貫通口と対向するように配置
され、前記一対の導電性部材と前記一対の板状金属リー
ド線がそれぞれ接着性導電性焼結体で接続され、前記平
板状絶縁性支持体は一方の表面に硝子膜が形成され、前
記一対の板状金属リード線の接続された前記薄膜サーミ
スタ素子を前記絶縁性支持体の一方の表面に配置し、前
記一対の板状金属リード線を含み前記薄膜サーミスタ素
子の周囲を硝子焼結体で被覆した構成を備えたものであ
る。
In order to solve the above-mentioned problems, a contact type thin film thermistor according to the present invention comprises a thin film thermistor element, a pair of plate-like metal leads and an insulating support. Is a flat alumina substrate, a pair of through holes provided in the flat alumina substrate, electrically conductive from one surface to the other surface of the flat alumina substrate, penetrating through the through hole A pair of conductive members disposed, a pair of electrode films disposed including the through hole on the one surface of the flat alumina substrate, and a temperature-sensitive layer disposed on the pair of electrode films. A pair of plate-like metal lead wires are disposed so as to face the pair of through-holes on the other surface of the flat alumina substrate of the thin-film thermistor element. The conductive member and the pair of plate-shaped metal lead wires are respectively connected by an adhesive conductive sintered body, and the flat insulating support body has a glass film formed on one surface thereof, and the pair of plate-shaped metal lead wires is provided. The connected thin film thermistor element was disposed on one surface of the insulating support, and the thin film thermistor element including the pair of plate-shaped metal leads was covered with a sintered glass body around the thin film thermistor element. Things.

【0007】[0007]

【作用】本発明は上記した構成によって、樹脂などの有
機物材料を全く使用していないので、最高使用温度は高
くなる。すなわち、平板状アルミナ基板、硝子焼結体、
電極膜、接着性導電性焼結体などは、高温焼成工程を経
て形成されるので、従来以上の高耐熱性を容易に得られ
る。また、絶縁性支持体にアルミナ板、導電性部材に導
電性焼結体を使用することにより、同様の耐熱性が容易
に得られる。従って、本発明の薄膜サーミスタの耐熱性
は、結局、感温抵抗体膜の耐熱性に依存する。この耐熱
性は感温抵抗体膜の材質、形成条件により決められる
が、例えばSiCスパッタ感温抵抗体膜を用いることに
より、最高使用温度500℃が得られる。
According to the present invention, the above-mentioned structure does not use any organic material such as resin, so that the maximum use temperature is increased. That is, a flat alumina substrate, a glass sintered body,
Since the electrode film, the adhesive conductive sintered body, and the like are formed through a high-temperature firing step, higher heat resistance than before can be easily obtained. The same heat resistance can be easily obtained by using an alumina plate for the insulating support and a conductive sintered body for the conductive member. Therefore, the heat resistance of the thin film thermistor of the present invention ultimately depends on the heat resistance of the temperature-sensitive resistor film. The heat resistance is determined by the material and the forming conditions of the temperature-sensitive resistor film. For example, by using a SiC sputtered temperature-sensitive resistor film, a maximum operating temperature of 500 ° C. can be obtained.

【0008】また、薄膜サーミスタ素子は平板状の形状
を有するので、絶縁性支持体と薄膜サーミスタ素子の間
の熱伝達は、従来の円筒状硝子封止型サーミスタ素子と
金属板の間の熱伝達に比べ優れ、このため熱応答性も速
くなる。
Further, since the thin-film thermistor element has a flat plate shape, the heat transfer between the insulating support and the thin-film thermistor element is smaller than that between the conventional cylindrical glass-sealed thermistor element and the metal plate. Excellent, so that the thermal response is also fast.

【0009】[0009]

【実施例】以下、本発明の実施例を添付図面にもとづい
て説明する。図1は本発明の接触型薄膜サーミスタの一
実施例を示す断面図である。平板状アルミナ基板5の対
向する位置に一対の貫通口6a,6bを設けている。平
板状アルミナ基板5の形状は、幅2mm、長さ6mm、
厚さ0.5mm、また一対の貫通口6a,6bの直径は
0.5mmとした。平板状アルミナ基板5の一方の表面に
一対の貫通口6a,6bを含んで電極用導電性ペースト
を印刷した後、乾燥・焼成して一対のAu−Pt厚膜電
極膜7a,7bを形成し、この後、貫通口用導電性ペー
ストを貫通口6a,6bの内表面上もしくは空間部に印
刷した後、乾燥・焼成して導電性部材8a,8bを形成
する。平板状アルミナ基板5の一方の表面から他の表面
にわたり電気的に導通するように、この一対の厚膜電極
膜7a,7bと一対の導電性部材8a,8bとは、一対
の導電性部材8a,8bの端部で電気的に接続されてい
る。電極用導電性ペースト、貫通口用導電性ペーストと
して、例えば、Agペースト、Ag−Pdペースト、A
u−Ptペーストなどが用いられる。この後、スパッタ
法により炭化ケイ素(SiC)感温抵抗体膜9を平板状
アルミナ基板5の一方の表面に形成して、薄膜サーミス
タ素子を構成する。
Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional view showing an embodiment of the contact type thin film thermistor of the present invention. A pair of through-holes 6a and 6b are provided at positions facing the flat alumina substrate 5. The shape of the flat alumina substrate 5 is 2 mm wide, 6 mm long,
The thickness was 0.5 mm, and the diameter of the pair of through-holes 6a and 6b was 0.5 mm. After printing a conductive paste for electrodes including a pair of through-holes 6a and 6b on one surface of the plate-like alumina substrate 5, drying and firing are performed to form a pair of Au-Pt thick film electrode films 7a and 7b. Thereafter, the conductive paste for through-holes is printed on the inner surfaces of the through-holes 6a and 6b or on the space, and then dried and fired to form the conductive members 8a and 8b. The pair of thick electrode films 7a and 7b and the pair of conductive members 8a and 8b are connected to each other by a pair of conductive members 8a so as to electrically conduct from one surface of the plate-like alumina substrate 5 to the other surface. , 8b are electrically connected. Examples of the conductive paste for the electrode and the conductive paste for the through-hole include Ag paste, Ag-Pd paste, and A
A u-Pt paste or the like is used. Thereafter, a silicon carbide (SiC) temperature-sensitive resistor film 9 is formed on one surface of the flat alumina substrate 5 by a sputtering method to form a thin-film thermistor element.

【0010】このようにして薄膜サーミスタ素子を形成
した後、平板状アルミナ基板5の他の表面で一対の貫通
口6a,6bに形成された導電性部材8a,8bと接触
して一対の接続用導電性ペーストを塗布し、この後、一
対の板状金属リード線10a,10bを接続用導電性ペ
ーストに密着した後、乾燥・焼成して接着性導電性焼結
体11a,11bを形成する。この時点で、薄膜サーミ
スタ素子に一対の板状金属リード線10a,10bが機
械的に弱く結合された中間組立品が形成される。なお、
この接続用導電性ペーストとして、電極薄膜用導電性ペ
ーストと同種のペーストが用いられる。
After the thin film thermistor element is formed in this manner, the other surface of the flat alumina substrate 5 contacts the conductive members 8a, 8b formed in the pair of through holes 6a, 6b to form a pair of connection members. A conductive paste is applied, and thereafter, a pair of plate-shaped metal lead wires 10a and 10b are adhered to the conductive paste for connection, and then dried and fired to form adhesive conductive sintered bodies 11a and 11b. At this point, an intermediate assembly is formed in which the pair of plate-like metal leads 10a and 10b are mechanically weakly coupled to the thin-film thermistor element. In addition,
As this conductive paste for connection, the same kind of paste as the conductive paste for electrode thin films is used.

【0011】他方で、アルミナ絶縁性支持体12を準備
し、その一方の表面に焼成硝子膜13を形成する。この
後、板状アルミナ絶縁性支持体12に形成された焼成硝
子膜13の上に前述した中間組立品を積層し、一対の板
状金属リード線10a,10bを含み薄膜サーミスタ素
子の周囲を硝子ペーストで被膜した後、乾燥・焼成して
硝子焼結体14を形成する。硝子焼結体14の厚さは1
〜2mmである。
On the other hand, an alumina insulating support 12 is prepared, and a fired glass film 13 is formed on one surface thereof. Thereafter, the above-mentioned intermediate assembly is laminated on the calcined glass film 13 formed on the plate-like alumina insulating support 12, and the periphery of the thin-film thermistor element including the pair of plate-like metal leads 10a and 10b is covered with glass. After coating with the paste, the glass sintered body 14 is formed by drying and firing. The thickness of the glass sintered body 14 is 1
22 mm.

【0012】この厚さは、印刷工程・焼成工程を経て形
成される通常の焼成厚膜の厚さの約100倍である。こ
のような厚さの硝子焼結体14をアルミナ絶縁性支持体
12の表面に焼成工程により形成する場合、熔融した硝
子はアルミナ絶縁性支持体12の表面上で濡れにくいの
で、球状になり易い。この傾向は、熔融硝子の中に硝子
と濡れ易い金属が配置された場合、特に顕著である。こ
の結果、アルミナ絶縁性支持体12と硝子焼結体14の
接着面積が低下し易い。この点を考慮して、本発明の接
触型薄膜サーミスタでは、アルミナ絶縁性支持体12の
表面にあらかじめ焼成硝子膜13が形成されている。熔
融した硝子は焼成硝子膜13上で濡れ易いので、所定の
接着面積が得られる。焼成硝子膜13と硝子焼結体14
の材質は、同じであることが、濡れ性の点でも最も優れ
ている。また、焼成硝子膜13は、アルミナ絶縁性支持
体12の周辺端部15を除いて形成されることが好まし
い。アルミナ絶縁性支持体12の一方の表面の全面にわ
たり焼成硝子膜13が形成された場合、硝子焼結体14
の量が多くなると、硝子焼結体14がアルミナ絶縁性支
持体12から溢れ易い。しかし、焼成硝子膜13がアル
ミナ絶縁性支持体12の周辺端部15を除いて形成され
た場合、上述したように、熔融した硝子は焼成硝子膜1
3上ではよく濡れるが、アルミナ絶縁性支持体12上で
は濡れにくいので、硝子焼結体14がアルミナ絶縁支持
体12から溢れることはないからである。
This thickness is about 100 times the thickness of a normal fired thick film formed through a printing process and a firing process. When the glass sintered body 14 having such a thickness is formed on the surface of the alumina insulating support 12 by a sintering step, the molten glass is hard to wet on the surface of the alumina insulating support 12 and thus easily becomes spherical. . This tendency is particularly remarkable when a metal that easily wets the glass is arranged in the molten glass. As a result, the bonding area between the alumina insulating support 12 and the glass sintered body 14 tends to decrease. In consideration of this point, in the contact type thin film thermistor of the present invention, the fired glass film 13 is formed on the surface of the alumina insulating support 12 in advance. Since the molten glass is easily wet on the fired glass film 13, a predetermined bonding area can be obtained. Fired glass film 13 and glass sintered body 14
Are the same in terms of wettability. Further, it is preferable that the fired glass film 13 is formed except for the peripheral end portion 15 of the alumina insulating support 12. When the fired glass film 13 is formed over one entire surface of the alumina insulating support 12, the sintered glass 14
When the amount is large, the glass sintered body 14 easily overflows from the alumina insulating support 12. However, when the fired glass film 13 is formed except for the peripheral end portion 15 of the alumina insulating support 12, as described above, the molten glass becomes the fired glass film 1.
This is because the glass sintered body 14 does not overflow from the alumina insulating support 12 because it wets well on the support 3 but does not easily wet on the alumina insulating support 12.

【0013】なお、一対の板状金属リード線10a,1
0bとして、幅1.2mm、厚さ0.3mm程度のFe−C
r系合金板が用いられる。この合金は耐熱性に優れるの
みならず、アルミナ基板5と同程度の熱膨張係数を有す
る硝子焼結体14で被覆したときクラックも発生しない
点で優れている。
A pair of plate-like metal lead wires 10a, 1
0b, Fe-C having a width of about 1.2 mm and a thickness of about 0.3 mm
An r-based alloy plate is used. This alloy is excellent not only in heat resistance, but also in that it does not crack when coated with a glass sintered body 14 having the same thermal expansion coefficient as the alumina substrate 5.

【0014】このようにして構成された本発明の接触型
薄膜サーミスタ構成では、従来例に比べ、樹脂などの有
機物が全く使用されていないので、最高使用温度を20
0℃以上にできる。すなわち、平板状アルミナ基板5、
電極膜7a,7b、導電性部材8a,8b、接着性導電
性焼結体11a,11b、硝子焼結体14などは、すべ
て無機物であり、しかも700℃以上の焼成工程を経て
形成されるので、500℃以上の耐熱性を容易に得られ
る。また、絶縁性支持体12にアルミナ板を使用ている
ので、この耐熱性も問題ない。従って、本発明の薄膜サ
ーミスタの耐熱性は、結局、感温抵抗体膜9の耐熱性に
依存する。この耐熱性は感温抵抗体膜9の材質、形成条
件により決められる。感温抵抗体膜9として、複合金属
酸化物、Ge,Si,SiCなどの蒸着膜、スパッタ
膜、印刷・焼成厚膜など種々あるが、なかでもSiCス
パッタ感温抵抗体膜は500℃の耐熱性を有すると共に
0−500℃の広い温度範囲を検出するのに適した抵抗
温度特性を有する点で優れている。また、対象物の表面
に本発明の接触型薄膜サーミスタを密着させて、90%
熱応答時間を測定した結果、7−8secの高速熱応答
性が得られた。
In the contact-type thin film thermistor of the present invention thus constructed, since the organic matter such as resin is not used at all as compared with the conventional example, the maximum use temperature is set to 20.
0 ° C or higher. That is, the flat alumina substrate 5,
Since the electrode films 7a and 7b, the conductive members 8a and 8b, the adhesive conductive sintered bodies 11a and 11b, the glass sintered body 14, and the like are all inorganic substances and are formed through a firing step at 700 ° C. or more, , 500 ° C. or higher heat resistance can be easily obtained. Also, since an alumina plate is used for the insulating support 12, there is no problem with this heat resistance. Therefore, the heat resistance of the thin film thermistor of the present invention depends on the heat resistance of the temperature-sensitive resistor film 9 after all. This heat resistance is determined by the material of the temperature-sensitive resistor film 9 and the forming conditions. There are various types of temperature-sensitive resistor films 9 such as composite metal oxides, vapor-deposited films of Ge, Si, SiC, etc., sputtered films, and printed and fired thick films. It has excellent resistance-temperature characteristics that are suitable for detecting a wide temperature range of 0 to 500 ° C. Further, the contact type thin film thermistor of the present invention is brought into close contact with the surface of the object, and 90%
As a result of measuring the thermal response time, a high-speed thermal response of 7-8 sec was obtained.

【0015】[0015]

【発明の効果】以上述べて来たように、本発明によれば
次に示す効果が得られる。
As described above, according to the present invention, the following effects can be obtained.

【0016】(1)従来の表面温度センサに用いられて
きた樹脂を全く含まず、すべてセラミック、焼結体、な
ど無機物で構成されるので、高耐熱性に優れる。
(1) Since it does not contain any resin used in the conventional surface temperature sensor and is entirely made of an inorganic material such as ceramic or sintered body, it is excellent in high heat resistance.

【0017】(2)アルミナ絶縁性支持体上の表面に焼
成硝子膜が形成されているので、硝子焼結体とアルミナ
絶縁性焼結体の接着を安定できる。
(2) Since the fired glass film is formed on the surface of the alumina insulating support, the adhesion between the glass sintered body and the alumina insulating sintered body can be stabilized.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例における接触型薄膜サーミス
タの断面図である。
FIG. 1 is a sectional view of a contact type thin film thermistor according to an embodiment of the present invention.

【図2】従来の表面温度センサを示す断面図である。FIG. 2 is a sectional view showing a conventional surface temperature sensor.

【符号の説明】[Explanation of symbols]

6a,6b 貫通口 7a,7b 厚膜電極膜 8a,8b 導電性部材 10a,10b 一対の板状金属リード線 11a,11b 接着性導電性焼結体 12 絶縁性支持体 13 焼成硝子膜 14 硝子焼結体 6a, 6b Through-hole 7a, 7b Thick film electrode film 8a, 8b Conductive member 10a, 10b A pair of plate-like metal lead wires 11a, 11b Adhesive conductive sintered body 12 Insulating support 13 Fired glass film 14 Glass firing Union

───────────────────────────────────────────────────── フロントページの続き (72)発明者 黄地 謙三 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭63−41002(JP,A) 特開 昭59−195803(JP,A) 特開 平2−180001(JP,A) 特開 平5−234714(JP,A) 特開 平4−293202(JP,A) 特開 平4−293203(JP,A) 特開 平4−293204(JP,A) ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Kenzo Koji 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-63-41002 (JP, A) JP-A-59 JP-A-195803 (JP, A) JP-A-2-180001 (JP, A) JP-A-5-234714 (JP, A) JP-A-4-293202 (JP, A) JP-A-4-293203 (JP, A) JP-A-4-293204 (JP, A)

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】薄膜サーミスタ素子と一対の板状金属リー
ド線と平板状絶縁性支持体から構成され、前記薄膜サー
ミスタ素子は平板状アルミナ基板と、前記平板状アルミ
ナ基板に設けられた一対の貫通口と、前記平板状アルミ
ナ基板の一方の表面から他の表面にわたり電気的に導通
して、前記貫通口を貫通して配置された一対の導電性部
材と、前記平板状アミルナ基板の前記一方の表面に前記
貫通口を含んで配置された一対の電極膜と、前記一対の
電極膜に積層して配置された感温抵抗体膜とから構成さ
れ、前記一対の板状金属リード線は前記薄膜サーミスタ
素子の前記平板状アルミナ基板の前記他の表面で前記一
対の貫通口と対向するように配置され、前記一対の導電
性部材と前記一対の板状金属リード線がそれぞれ接着性
導電性焼結体で接続され、前記平板状絶縁性支持体は一
方の表面に硝子膜が形成され、前記一対の板状金属リー
ド線の接続された前記薄膜サーミスタ素子を前記絶縁性
支持体の前記一方の表面に配置し、前記一対の板状金属
リード線を含み前記薄膜サーミスタ素子の周囲を硝子焼
結体で被覆した接触型薄膜サーミスタ。
1. A thin-film thermistor element, a pair of plate-like metal lead wires and a flat insulating support, wherein the thin-film thermistor element has a flat alumina substrate and a pair of through holes provided on the flat alumina substrate. Port, electrically conductive from one surface of the plate-like alumina substrate to the other surface, a pair of conductive members disposed through the through-hole, and the one of the plate-like amilna substrate A pair of electrode films disposed on the surface including the through-hole, and a temperature-sensitive resistor film laminated on the pair of electrode films; and the pair of plate-shaped metal lead wires is formed of the thin film. The other surface of the flat alumina substrate of the thermistor element is disposed so as to face the pair of through-holes, and the pair of conductive members and the pair of plate-shaped metal lead wires are respectively formed of an adhesive conductive sintered body. Contact with the body A glass film is formed on one surface of the flat insulating support, and the thin film thermistor element connected to the pair of flat metal leads is disposed on the one surface of the insulating support. A contact-type thin-film thermistor including the pair of plate-like metal leads and surrounding the thin-film thermistor element with a glass sintered body.
【請求項2】平板状絶縁性支持体の一方の表面の外周部
は非硝子膜としてなる請求項1記載の接触型薄膜サーミ
スタ。
2. The contact type thin film thermistor according to claim 1, wherein the outer peripheral portion of one surface of the flat insulating support is a non-glass film.
【請求項3】平板状絶縁性支持体の一方の表面に形成さ
れた硝子膜と硝子焼結体は同じ材質である請求項1記載
の接触型薄膜サーミスタ。
3. The contact type thin film thermistor according to claim 1, wherein the glass film and the glass sintered body formed on one surface of the flat insulating support are made of the same material.
JP29410491A 1991-11-11 1991-11-11 Contact type thin film thermistor Expired - Lifetime JP2734840B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29410491A JP2734840B2 (en) 1991-11-11 1991-11-11 Contact type thin film thermistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29410491A JP2734840B2 (en) 1991-11-11 1991-11-11 Contact type thin film thermistor

Publications (2)

Publication Number Publication Date
JPH05135909A JPH05135909A (en) 1993-06-01
JP2734840B2 true JP2734840B2 (en) 1998-04-02

Family

ID=17803341

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29410491A Expired - Lifetime JP2734840B2 (en) 1991-11-11 1991-11-11 Contact type thin film thermistor

Country Status (1)

Country Link
JP (1) JP2734840B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220163406A1 (en) * 2018-01-18 2022-05-26 In-Situ, Inc. Fast Response Temperature Sensors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220163406A1 (en) * 2018-01-18 2022-05-26 In-Situ, Inc. Fast Response Temperature Sensors
US11920987B2 (en) * 2018-01-18 2024-03-05 In-Situ, Inc. Fast response temperature sensors

Also Published As

Publication number Publication date
JPH05135909A (en) 1993-06-01

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