JP2747490B2 - Method for producing oxide superconducting thin film - Google Patents
Method for producing oxide superconducting thin filmInfo
- Publication number
- JP2747490B2 JP2747490B2 JP1009776A JP977689A JP2747490B2 JP 2747490 B2 JP2747490 B2 JP 2747490B2 JP 1009776 A JP1009776 A JP 1009776A JP 977689 A JP977689 A JP 977689A JP 2747490 B2 JP2747490 B2 JP 2747490B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconducting thin
- jig
- oxide superconducting
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Description
【発明の詳細な説明】 〔概 要〕 本発明は、酸化物超伝導薄膜の製造方法に関し、 治具からの不純物の混入を防止した酸化物超伝導薄膜
の製造方法を提供することを目的とし、 酸化物超伝導体の所定成分を物理的に堆積させる工程
を含み、この堆積工程において、少なくともこの堆積工
程に関与する表面が上記酸化物超伝導体と同一組成から
成る治具を用いるように構成する。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for producing an oxide superconducting thin film, and an object thereof is to provide a method for producing an oxide superconducting thin film in which impurities from a jig are prevented from being mixed. A step of physically depositing a predetermined component of the oxide superconductor. In this deposition step, at least a surface involved in the deposition step uses a jig having the same composition as the oxide superconductor. Configure.
本発明は、酸化物超伝導薄膜の製造方法に関する。 The present invention relates to a method for producing an oxide superconducting thin film.
近年のコンピュータシステムの高速化の要求に伴い、
配線によるロスを低減するために、半導体の高密度実装
が進められている。しかし、高密度実装のために配線を
微細化すると抵抗の増加が避けられず、高速信号の歪や
大幅な減衰をもたらす。そこで、高いTcを有する酸化物
超伝導体で配線を形成することが試みられている。With the recent demand for faster computer systems,
In order to reduce the loss due to wiring, high-density mounting of semiconductors has been promoted. However, when the wiring is miniaturized for high-density mounting, an increase in resistance is inevitable, resulting in high-speed signal distortion and significant attenuation. Therefore, it has been attempted to form a wiring with an oxide superconductor having a high Tc.
このような配線として超伝導薄膜を製造する方法とし
ては、高温（たとえば800〜950℃）に加熱した基板上に
スパッタまたは蒸着等によって、必要な成分を物理的に
堆積させ、その後アニールする方法が一般的である。As a method of manufacturing a superconducting thin film as such a wiring, a method of physically depositing necessary components on a substrate heated to a high temperature (for example, 800 to 950 ° C.) by sputtering or vapor deposition and then annealing the substrate. General.
基板を加熱してスパッタや蒸着をする際の、真空チャ
ンバーや基板加熱の治具は、超伝導組成とは異なる材
料、通常鉄やニッケル等を含んだステンレス鋼からでき
ている。そのため、従来の堆積工程中には、これらの治
具からその材料成分が飛散するため超伝導特性を損なう
ような不純物が堆積層中に混入する組成変動が避けられ
なかった。特に、鉄等の磁性元素は、超伝導相を破壊し
て磁性のオーダリングをなすことが知られており、この
混入は防止する必要がある。A vacuum chamber and a jig for heating the substrate when the substrate is heated for sputtering or vapor deposition are made of a material different from the superconducting composition, usually stainless steel containing iron, nickel, or the like. For this reason, during the conventional deposition process, a composition change in which impurities that impair the superconductivity are mixed into the deposition layer due to the scattering of the material component from these jigs cannot be avoided. In particular, it is known that a magnetic element such as iron breaks the superconducting phase to form a magnetic ordering, and it is necessary to prevent this mixing.
本発明は、治具からの不純物の混入による組成変動を
防止した酸化物超伝導薄膜の製造方法を提供することを
目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing an oxide superconducting thin film in which a composition change caused by mixing of impurities from a jig is prevented.
上記の目的は、本発明によれば、酸化物超伝導体の所
定成分を物理的に堆積させる工程を含み、この堆積工程
において、少なくともこの堆積工程に関与する表面が上
記酸物超伝導体と同一組成から成る治具を用いることを
特徴とする酸化物超伝導薄膜の製造方法によって達成さ
れる。According to the present invention, the above object includes a step of physically depositing a predetermined component of an oxide superconductor, and in this deposition step, at least a surface involved in the deposition step is formed with the acid superconductor. This is achieved by a method of manufacturing a superconducting oxide thin film, which uses a jig having the same composition.
本発明を適用する酸化物超伝導薄膜は、酸化物超伝導
体から成り、配線として適当な厚さは数1000Å〜数10,0
00Åである。酸化物超伝導体としては、特にTcの高い、
Cu及びＯを含む結晶面を有するたとえばBi−Sr−Ca−Cu
−Ｏ系超伝導体の薄膜製造に適用すると特に有利であ
る。The oxide superconducting thin film to which the present invention is applied is made of an oxide superconductor, and a suitable thickness for wiring is several thousand to several tens of thousands.
00Å. As an oxide superconductor, particularly high Tc,
For example, Bi-Sr-Ca-Cu having a crystal plane containing Cu and O
It is particularly advantageous when applied to the production of thin films of -O-based superconductors.
最終的な酸化物超伝導薄膜の組成を得るために必要な
成分をスパッタ、蒸着等によって適当な基板上に物理的
に堆積させる。Components necessary for obtaining the final composition of the oxide superconducting thin film are physically deposited on a suitable substrate by sputtering, vapor deposition, or the like.
堆積工程に関与する治具の表面は、堆積に用いる装置
の態様によって決定し、主として、基板を高温に保持す
ることに伴い必然的に同等の高温に昇温される治具の表
面部分が含まれる。堆積工程中に、このような高温に保
持された治具表面からは、表面を構成する材料の成分が
飛散し、堆積層中に混入する。The surface of the jig involved in the deposition process is determined by the mode of the apparatus used for the deposition, and mainly includes the surface portion of the jig which is inevitably heated to the same high temperature as the substrate is kept at a high temperature. It is. During the deposition process, components of the material constituting the surface are scattered from the surface of the jig kept at such a high temperature and mixed into the deposition layer.
本発明は、少なくとも治具の上記のような関与表面を
最終的な酸化物超伝導薄膜と同一組成とすることによっ
て、上記の飛散、混入による堆積層の組成変動を解消す
る。The present invention eliminates the above-mentioned variation in the composition of the deposited layer due to scattering and mixing by making at least the participating surface of the jig the same composition as the final oxide superconducting thin film.
本発明に用いる治具は、必要な関与表面のみが酸化物
超伝導体で被覆されていれば十分である。ただし、関与
表面を有する治具の全体または関与表面を含む部分が酸
化物超伝導体で作られていれば、治具の交換あるいは再
被覆なしに長期間の連続的な使用が可能なので更に有利
である。It is sufficient for the jig used in the present invention that only the necessary participating surfaces are covered with the oxide superconductor. However, if the entire jig having the participating surface or the part including the participating surface is made of an oxide superconductor, it can be used continuously for a long time without replacement or recoating of the jig, which is further advantageous. It is.
本発明にしたがった治具の被覆は、通常のステンレス
鋼製治具等を堆積装置（スパッタ装置、蒸着装置等）内
に実際の堆積工程を行なう状態で配置して、実際に用い
る所定成分を実際の堆積工程と同様にして治具の表面に
堆積させることによって行なうのが便利である。The coating of the jig according to the present invention is performed by arranging a normal stainless steel jig or the like in a deposition apparatus (a sputtering apparatus, a vapor deposition apparatus, or the like) in a state where the actual deposition process is performed, and using a predetermined component actually used. It is convenient to carry out the deposition by depositing it on the surface of the jig in the same manner as the actual deposition process.
堆積後に、必要に応じて通常のアニールを行なって超
伝導結晶構造を得る。After the deposition, normal annealing is performed as necessary to obtain a superconducting crystal structure.
本発明においては、少なくとも堆積工程に関与する治
具表面が、最終的な酸化物超伝導薄膜と同一成分の材料
で構成されているので、治具表面から飛散、混入が生じ
ても、堆積層の組成変動が防止される。In the present invention, since at least the surface of the jig involved in the deposition step is made of the same material as the final oxide superconducting thin film, even if the jig surface scatters and mixes, Of the composition is prevented.
以下に、添付図面を参照し、実施例によって本発明を
更に詳しく説明する。Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.
第１図に、本発明にしたがって堆積工程を行なうため
に用いたRFマグネトロンスパッタ装置の部分を模式的に
示す。FIG. 1 schematically shows a part of an RF magnetron sputtering apparatus used for performing a deposition step according to the present invention.
Bi2Sr2Ca2Cu3Oxのターゲット１に対向して、ヒータブ
ロック６上にMgO単結晶の基板２がネジ３によって基板
おさえ４で保持されている。ターゲット１と基板２との
間にシャッター５が配置されている。A MgO single crystal substrate 2 is held on a heater block 6 by screws 3 so as to face a target 1 of Bi 2 Sr 2 Ca 2 Cu 3 Ox. A shutter 5 is arranged between the target 1 and the substrate 2.
ネジ３、基板おさえ４、シャッター５、およびヒータ
ーブロック６はいずれもJIS SUS304ステンレス鋼製であ
り、実際の堆積工程を行なう前に、この配置で基板温度
800℃でターゲット１を用いたスパッタを行なって表面
を被覆した。スパッタ条件は、パワー75W、時間２時間
であり、被覆の厚さは約5000Åであった。ただし、この
ときに配置してあった基板は、単なるダミーであるから
たとえば同一寸法のステンレス鋼等の小板でもよい。The screws 3, the substrate holder 4, the shutter 5, and the heater block 6 are all made of JIS SUS304 stainless steel.
The surface was coated by sputtering using the target 1 at 800 ° C. The sputtering conditions were a power of 75 W and a time of 2 hours, and the thickness of the coating was about 5000 °. However, since the substrate arranged at this time is merely a dummy, it may be a small plate of stainless steel or the like having the same dimensions.
被覆後に基板１の温度800℃で４時間のスパッタを行
ない新らたなMgO基板１上に厚さ約10,000ÅにBi2Sr2Ca2
Cu3Oxを堆積させ、これをAr＋O2（全圧１気圧、O2分圧1
/13）の雰囲気中、875℃で２時間アニールして超伝導薄
膜とした。After coating, the substrate 1 is sputtered at a temperature of 800 ° C. for 4 hours to form a Bi 2 Sr 2 Ca 2 layer on a fresh MgO substrate 1 to a thickness of about 10,000 Å.
Cu 3 Ox is deposited, and this is Ar + O 2 (total pressure 1 atmosphere, O 2 partial pressure 1
Annealed at 875 ° C. for 2 hours in an atmosphere of (13) to form a superconducting thin film.
ステンレス鋼治具3,4,5,6に被覆を施さずに実施例と
同様の堆積およびアニールを行なって超伝導薄膜を得
た。The superconducting thin films were obtained by performing the same deposition and annealing as in the example without coating the stainless steel jigs 3, 4, 5, and 6.
実施例および比較例で得た薄膜についてTcを測定した
結果を第２図に示す。FIG. 2 shows the results of measuring the Tc of the thin films obtained in Examples and Comparative Examples.
被覆なしの治具を用いた比較例の薄膜ではバルク状態
より著しく低いTce＝60Kであったが、本発明にしたがっ
て被覆された治具を用いた実施例の薄膜ではバルク状態
と同等のTce＝80Kが達成された。これは特に治具のステ
ンレス鋼の主成分であるFeの混入が防止されたためであ
る。In the thin film of the comparative example using the jig without coating, Tce was significantly lower than that in the bulk state. 80K has been achieved. This is because the incorporation of Fe, which is the main component of the stainless steel of the jig, was particularly prevented.
本発明は、治具からの不純物の混入による組成変動を
防止した酸化物超伝導薄膜を製造できるので、特に半導
体装置の高密度実装に極めて有用である。INDUSTRIAL APPLICABILITY The present invention can manufacture an oxide superconducting thin film in which composition fluctuation due to mixing of impurities from a jig can be prevented, and is therefore extremely useful particularly for high-density mounting of semiconductor devices.
第１図は、本発明にしたがって酸化物超伝導薄膜を製造
するために用いる堆積装置の１例の部分を示す模式図、
および 第２図は、本発明にしたがって製造したBi2Sr2Ca2Cu3Ox
超伝導薄膜の温度に対する電気抵抗率の変化を、従来の
方法で製造した場合と比較して示すグラフである。 １……Bi2Sr2Ca2Cu3Oxのターゲット、 ２……MgO単結晶基板、３……ネジ、 ４……基板おさえ、５……シャッター、 ６……ヒータブロック。FIG. 1 is a schematic view showing a part of an example of a deposition apparatus used for producing an oxide superconducting thin film according to the present invention;
And FIG. 2 shows Bi 2 Sr 2 Ca 2 Cu 3 Ox produced according to the present invention.
4 is a graph showing a change in electric resistivity with respect to a temperature of a superconducting thin film in comparison with a case where a superconducting thin film is manufactured by a conventional method. 1 ...... Bi 2 Sr 2 Ca 2 Cu 3 Ox target, 2 ...... MgO single crystal substrate, 3 ...... screws, 4 ...... presser substrate, 5 ...... shutter, 6 ...... heater block.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｃ２３Ｃ 14/50 ＺＡＡ Ｃ２３Ｃ 14/50 ＺＡＡＺ Ｈ０１Ｂ 12/06 ＺＡＡ Ｈ０１Ｂ 12/06 ＺＡＡ Ｈ０１Ｌ 39/24 ＺＡＡ Ｈ０１Ｌ 39/24 ＺＡＡＢ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI C23C 14/50 ZAA C23C 14/50 ZAAZ H01B 12/06 ZAA H01B 12/06 ZAA H01L 39/24 ZAA H01L 39/24 ZAAB
Claims (1)
させる工程を含み、この堆積工程において、少なくとも
この堆積工程に関与する表面が上記酸化物超伝導体と同
一組成から成る治具を用いることを特徴とする酸化物超
伝導薄膜の製造方法。1. A jig comprising a step of physically depositing a predetermined component of an oxide superconductor, wherein at least a surface involved in the deposition step has the same composition as that of the oxide superconductor. A method for producing an oxide superconducting thin film, characterized by using:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009776A JP2747490B2 (en) | 1989-01-20 | 1989-01-20 | Method for producing oxide superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009776A JP2747490B2 (en) | 1989-01-20 | 1989-01-20 | Method for producing oxide superconducting thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02192404A JPH02192404A (en) | 1990-07-30 |
| JP2747490B2 true JP2747490B2 (en) | 1998-05-06 |
Family
ID=11729647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1009776A Expired - Lifetime JP2747490B2 (en) | 1989-01-20 | 1989-01-20 | Method for producing oxide superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2747490B2 (en) |
-
1989
- 1989-01-20 JP JP1009776A patent/JP2747490B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02192404A (en) | 1990-07-30 |
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