JP2772095B2 - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JP2772095B2 JP2772095B2 JP1738390A JP1738390A JP2772095B2 JP 2772095 B2 JP2772095 B2 JP 2772095B2 JP 1738390 A JP1738390 A JP 1738390A JP 1738390 A JP1738390 A JP 1738390A JP 2772095 B2 JP2772095 B2 JP 2772095B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- substrate
- thin film
- sensitive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 56
- 239000010409 thin film Substances 0.000 claims description 54
- 239000010408 film Substances 0.000 claims description 46
- 230000001681 protective effect Effects 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052697 platinum Inorganic materials 0.000 description 22
- 238000000034 method Methods 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000011253 protective coating Substances 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241001417534 Lutjanidae Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は感温センサに関する。Description: TECHNICAL FIELD The present invention relates to a temperature sensor.
従来、感温センサとして様々なタイプのものがある
が、白金線を耐熱性絶縁物に巻き付けた感温センサは、
温度変化に対する抵抗変化が直線的であるために使い易
いセンサとして知られている。ただ、この感温センサ
は、白金線がバルク状であるため、小型化に適していな
い。Conventionally, there are various types of temperature sensors, but a temperature sensor with a platinum wire wound around a heat-resistant insulator is
It is known as an easy-to-use sensor because the resistance change with respect to temperature change is linear. However, this temperature sensor is not suitable for miniaturization because the platinum wire is in a bulk state.
このような不都合を解決するため、第５図、あるい
は、第６図（ａ）、（ｂ）に示す感温センサが提案され
ている。これらの感温センサでは、感温用にバルク体で
なく薄膜体（例えば、温度変化に伴い抵抗値の変わる薄
膜抵抗体）を利用しているため、小型化に適するものと
なっている。In order to solve such inconvenience, a temperature sensor shown in FIG. 5 or FIGS. 6A and 6B has been proposed. These temperature sensors use a thin film body (for example, a thin film resistor whose resistance value changes with temperature change) instead of a bulk body for temperature sensing, and thus are suitable for miniaturization.
すなわち、第５図に示す感温センサでは、温度変化に
伴い抵抗値の変わる薄膜抵抗体52aとこの薄膜抵抗体52a
を外部回路に接続するための引出用端子部52bとからな
る白金パターン52が基板51表面に形成されていて、この
引出用端子部52bにリード線55が取り付けられた構成が
とられている。That is, in the temperature sensor shown in FIG. 5, the thin film resistor 52a whose resistance value changes with the temperature change and the thin film resistor 52a
Is formed on the surface of the substrate 51, and a lead wire 55 is attached to the lead terminal 52b.
第６図（ａ）、（ｂ）に示す感温センサでは、第５図
の感温センサに加えて、薄膜抵抗体52aの下側にあたる
個所に掘り込み51′ａのある基板51′を用い、薄膜抵抗
体52aのある部分の厚みを薄くすることにより熱容量を
小さくして熱応答性を高めるという構成がとられてい
る。In the temperature sensor shown in FIGS. 6 (a) and 6 (b), in addition to the temperature sensor shown in FIG. 5, a substrate 51 'having a dug-down portion 51'a under the thin film resistor 52a is used. In addition, a configuration is adopted in which the heat capacity is reduced by reducing the thickness of a certain portion of the thin film resistor 52a, thereby improving the thermal response.
しかしながら、これらの感温センサには、以下のよう
な問題がある。However, these temperature sensors have the following problems.
第５図の感温センサでは、薄膜抵抗体断線や結露等に
よる感温機能低下を阻止するために薄膜抵抗体52a形成
面に保護膜を形成する。例えば、第７図（ａ）、（ｂ）
にみるように、ポリイミド系樹脂や低融点ガラス、ある
いは、比較的熱伝導性のよい樹脂でもって基板51表面全
体を覆う保護膜54を形成したり、あるいは、第８図
（ａ）、（ｂ）にみるように、例えば、二酸化シリコン
膜やシリコン窒化膜でもって薄膜抵抗体形成面だけを覆
う保護膜54′を先に形成し、その後でリード線55を取り
付けポリイミド系樹脂や低融点ガラスでもってリード線
固着部を別途覆う保護被覆56を形成するようにしている
（もちろん、第６図（ａ）、（ｂ）の感温センサでも同
様に保護膜が形成される）。In the temperature sensor shown in FIG. 5, a protective film is formed on the surface on which the thin film resistor 52a is formed in order to prevent the temperature sensing function from deteriorating due to disconnection of the thin film resistor or dew condensation. For example, FIGS. 7 (a) and 7 (b)
As shown in FIG. 8, a protective film 54 covering the entire surface of the substrate 51 is formed of a polyimide resin, low melting point glass, or a resin having relatively high thermal conductivity. As shown in), for example, a protective film 54 'that covers only the thin-film resistor forming surface is formed first with a silicon dioxide film or a silicon nitride film, and then a lead wire 55 is attached, and then a polyimide resin or low melting glass is used. Thus, a protective coating 56 for separately covering the lead wire fixing portion is formed (of course, a protective film is similarly formed in the temperature sensor of FIGS. 6A and 6B).
しかしながら、前者のようなリード線固着部をも含め
て覆うような保護形態は、二酸化シリコン膜やシリコン
窒化膜による薄い保護膜形成が困難であるため、保護膜
54自体の熱容量が大きくなり、小型化を図ったとして
も、それに見合うだけの十分な熱応答性の向上が伴わな
い。However, in the case of the former type, in which the protection including the lead wire fixing portion is covered, it is difficult to form a thin protective film using a silicon dioxide film or a silicon nitride film.
Even if the heat capacity of the 54 itself is increased and the size is reduced, the thermal responsiveness is not sufficiently improved to match the size.
一方、後者のように薄膜抵抗体形成面とリード線固着
部を別々に覆う保護形態は、小型化を進めた場合、それ
ぞれの部分を選択的にうまく覆う被覆形成が極めて困難
である。On the other hand, in the case of the latter type, in which the thin-film resistor forming surface and the lead wire fixing portion are separately covered as in the latter, it is extremely difficult to form a coating that selectively and appropriately covers the respective portions when miniaturization is advanced.
この発明は、上記のような事情に鑑み、センサ小型化
が容易であり、しかも、感温用薄膜体形成面への薄い保
護膜形成が容易であって、かつ、熱応答性に優れる構成
をもつ感温センサを提供することを課題とする。In view of the above-described circumstances, the present invention provides a configuration in which a sensor can be easily miniaturized, a thin protective film can be easily formed on a surface on which a temperature-sensitive thin film is formed, and the thermal response is excellent. An object of the present invention is to provide a temperature sensor having the same.
前記課題を解決するため、請求項１〜５記載の感温セ
ンサでは、感温用薄膜体が基板表面に形成され、前記薄
膜体に接続される引出用端子部が前記基板に設けられて
いる感温センサにおいて、前記引出用端子部が基板裏面
側に形成され、この引出用端子部と感温用薄膜体の間の
電気的接続が前記基板内を通してなされているととも
に、感温用薄膜体形成面が保護膜で覆われてなる構成を
とるようにしている。In order to solve the problem, in the temperature-sensitive sensor according to any one of claims 1 to 5, a temperature-sensitive thin film is formed on a surface of the substrate, and a lead terminal portion connected to the thin film is provided on the substrate. In the temperature-sensitive sensor, the lead-out terminal is formed on the back side of the substrate, and an electrical connection between the lead-out terminal and the temperature-sensitive thin film is made through the inside of the substrate. The configuration is such that the formation surface is covered with a protective film.
感温用薄膜体と引出用端子部との電気的接続は、例え
ば、請求項２のように、基板に貫通孔が設けられ、この
貫通孔に感温用薄膜体の裏面側接続部が臨んでいるとと
もに、同裏面側接続部に引出用端子部が直接コンタクト
するという構成をとることでなされる。The electrical connection between the temperature-sensitive thin film and the lead-out terminal portion is made, for example, by providing a through-hole in the substrate, and the back surface side connection portion of the temperature-sensitive thin film facing the through-hole. In addition, the configuration is such that the lead-out terminal portion is in direct contact with the rear surface side connection portion.
基板としては、例えば、請求項３のように、半導体層
表面に絶縁層が積層されてなる絶縁基板（例えば、表面
に絶縁層用の二酸化シリコン層やシリコン窒化層を有す
るシリコン基板）が挙げられる。この場合、感温用薄膜
鯛は絶縁層の上に形成するようにし、また、感温用薄膜
体と引出用端子部との電気的接続は、例えば、請求項４
のように、半導体層に厚みが薄く不純物濃度の高い部分
を局所的に形成しておいて、同厚みの薄い部分表面の絶
縁層が除去された跡に感温用薄膜体の裏面側接続部がコ
ンタクトし、同厚みの薄い部分裏面に引出用端子部をコ
ンタクトさせるという構成が挙げられる。なお、基板と
して、これ以外に、絶縁セラミック材からなる絶縁基板
のなどを用いることもできる。Examples of the substrate include an insulating substrate in which an insulating layer is laminated on the surface of a semiconductor layer (for example, a silicon substrate having a silicon dioxide layer or a silicon nitride layer for the insulating layer on the surface). . In this case, the temperature-sensitive thin-film snapper is formed on the insulating layer, and the electrical connection between the temperature-sensitive thin-film body and the lead-out terminal is, for example, defined in claim 4.
In the semiconductor layer, a portion having a small thickness and a high impurity concentration is locally formed in the semiconductor layer as shown in FIG. , And a drawer terminal portion is brought into contact with the back surface of the thin portion having the same thickness. In addition, other than this, an insulating substrate made of an insulating ceramic material can be used as the substrate.
保護膜としては、請求項５のように、酸化物および／
または窒化物からなる蒸着膜、例えば、スパッタリング
法やCVD法等を用い形成された二酸化シリコン膜、シリ
コン窒化膜、これらの積層膜等が挙げられる。As the protective film, an oxide and / or
Alternatively, a vapor deposition film made of a nitride, for example, a silicon dioxide film formed by a sputtering method, a CVD method, or the like, a silicon nitride film, a stacked film thereof, or the like can be given.
感温用薄膜体としては、例えば、白金薄膜抵抗体や金
薄膜抵抗体など温度変化に伴い抵抗値の変わる薄膜抵抗
体が用いられる。また、引出用端子部は、通常、感温薄
膜体形成材料と同じ材料でもって形成されているが、異
なる材料でもって形成されていてもよい。As the thin film for temperature sensing, for example, a thin film resistor whose resistance value changes with temperature change, such as a platinum thin film resistor or a gold thin film resistor, is used. Further, the lead terminal portion is usually formed of the same material as the temperature-sensitive thin film forming material, but may be formed of a different material.
もちろん、この発明の感温センサは上記例示した構成
に何ら限定されないことはいうまでもない。Of course, it goes without saying that the temperature-sensitive sensor of the present invention is not limited to the configuration described above.
この発明の感温センサでは、感温用に薄膜体を用いて
いるため、小型化を図り易く、引出用端子部が感温用薄
膜体形成面とは逆の基板裏面にあって、保護膜として、
信頼性が高くて厚みの薄い（例えば、数μｍ程度の）膜
を容易に形成することができるので、熱応答性の向上が
図り易い。In the temperature sensor of the present invention, since the thin film is used for temperature sensing, it is easy to reduce the size, and the lead-out terminal portion is on the reverse side of the substrate opposite to the surface on which the thin film for temperature sensing is formed, and the protective film is formed. As
Since a film having high reliability and a small thickness (for example, about several μm) can be easily formed, the thermal responsiveness can be easily improved.
以下、この発明の感温センサの一実施例を、図面を参
照しながら、詳しく説明する。Hereinafter, an embodiment of the temperature sensor of the present invention will be described in detail with reference to the drawings.
−実施例１− 第１図（ａ）、（ｂ）は、この発明にかかる感温セン
サの一実施例の要部をあらわす。Example 1 FIGS. 1A and 1B show a main part of an example of a temperature sensor according to the present invention.
この感温センサは、表裏両側の後述する厚みの薄い部
分1bを除いた部分それぞれに絶縁層（例えば、酸化物層
や窒化物層）11、21を有する半導体基板（例えば、シリ
コン基板）１を備えるとともに、温度変化に伴い抵抗値
の変わる薄膜抵抗体2aと裏面側接続部2bとからなる白金
パターン２を備え、かつ、薄膜抵抗体2aを外部に取り出
すための２個の引出用端子部４を備えている。図にみる
ように、白金パターン２は半導体基板（絶縁基板）１表
面に、白金からなる引出用端子部４が半導体基板１裏面
にそれぞれ形成されている。これら白金パターン２や引
出用端子部４は白金膜をスパッタリング法や真空蒸着法
により形成しておいて、湿式エッチングやイオンミリン
グ法等によりパターニングすることでそれぞれ形成され
ている。This temperature-sensitive sensor includes a semiconductor substrate (for example, a silicon substrate) 1 having insulating layers (for example, an oxide layer or a nitride layer) 11 and 21 in portions except for a thin portion 1b described later on both sides. A platinum pattern 2 comprising a thin film resistor 2a whose resistance value changes with a temperature change and a back side connection portion 2b, and two extraction terminal portions 4 for taking out the thin film resistor 2a to the outside. It has. As shown in the figure, a platinum pattern 2 is formed on a surface of a semiconductor substrate (insulating substrate) 1 and a lead terminal 4 made of platinum is formed on a back surface of the semiconductor substrate 1. The platinum pattern 2 and the lead terminal 4 are formed by forming a platinum film by a sputtering method or a vacuum evaporation method, and then patterning the film by a wet etching method or an ion milling method.
半導体基板１には、裏面側から形成した掘り込み1aに
より厚みが薄くなっていて、不純物が拡散されることに
より不純物濃度が高く（＞1017/cm2）なった部分（ダイ
アフラム状部分）1bが局所的に設けられている。この厚
みの薄い部分1b表面の絶縁層が除去された跡に裏面側接
続部2bの一部が接合し電気的にコンタクトし、同厚みの
薄い部分1b裏面に引出用端子部４が電気的にコンタクト
していることにより、薄膜抵抗体2aと引出用端子部４の
間の電気的接続がなされている。この引出用端子部４に
はリード線５が半田接着、熱圧着などにより固着されて
いる。In the semiconductor substrate 1, a portion (diaphragm-shaped portion) 1b whose thickness is thinned by a dug 1a formed from the rear surface side and whose impurity concentration is increased (> 10 17 / cm 2 ) by diffusion of the impurity. Are provided locally. A part of the back side connecting portion 2b is joined to and electrically contacts the trace where the insulating layer on the surface of the thin portion 1b is removed, and the lead terminal 4 is electrically connected to the back surface of the thin portion 1b. Due to the contact, the electrical connection between the thin film resistor 2a and the lead terminal 4 is established. A lead wire 5 is fixed to the lead terminal portion 4 by solder bonding, thermocompression bonding, or the like.
そして、半導体基板１の全表面には酸化物膜や窒化物
膜（二酸化シリコン膜やシリコン窒化膜）からなる厚み
数μｍ程度の薄い保護膜３が積層形成されている。On the entire surface of the semiconductor substrate 1, a thin protective film 3 having a thickness of about several micrometers made of an oxide film or a nitride film (silicon dioxide film or silicon nitride film) is formed.
続いて、上記感温センサの製造方法の一例を、第２図
（ａ）〜（ｉ）を参照しながら説明する。Next, an example of a method for manufacturing the temperature sensor will be described with reference to FIGS.
まず、第２図（ａ）にみるように、基板用材料とし
て、表面が（100）面であるＰ型シリコン基板１を用
い、熱酸化法等により両面に二酸化シリコン層11、22を
形成し、その上にシリコン窒化膜12、22をCVD法等によ
り形成する。First, as shown in FIG. 2 (a), a P-type silicon substrate 1 having a (100) surface is used as a substrate material, and silicon dioxide layers 11, 22 are formed on both surfaces by a thermal oxidation method or the like. Then, silicon nitride films 12 and 22 are formed thereon by a CVD method or the like.
ついで、レジストマスク（図示省略）を用い、第２図
（ｂ）にみるように、基板裏面側に窓23を明けておい
て、KOH（40wt％）およびH2O（60wt％）の組成で80℃の
アルカリエッチング液を用い、異方性エッチングを施
し、第２図（ｃ）にみるように、掘り込み1aを形成し厚
みの薄い部分1bを形成する。この厚みの薄い部分1bの厚
みは１〜数μｍ程度である。Then, using a resist mask (not shown), as shown in FIG. 2 (b), a window 23 was opened on the back side of the substrate, and a composition of KOH (40 wt%) and H 2 O (60 wt%) was used. Anisotropic etching is performed by using an alkaline etching solution at 80 ° C. to form a dug 1a and a thin portion 1b as shown in FIG. 2 (c). The thickness of the thin portion 1b is about 1 to several μm.
掘り込み1a形成後、第２図（ｄ）にみるように、窒化
膜12、22を除去した後、レジストマスク（図示省略）を
用い、二酸化シリコン膜11における厚みの薄い部分1bの
位置に窓11aを明けてから、第２図（ｅ）にみるよう
に、例えば、リン等のＮ型不純物を高濃度で拡散させる
（抵抗値の低いＮ型の不純物高濃度領域1dを形成するの
である）。After the formation of the digging 1a, as shown in FIG. 2 (d), after removing the nitride films 12 and 22, a resist mask (not shown) is used to open a window at the position of the thin portion 1b in the silicon dioxide film 11. After the opening of 11a, as shown in FIG. 2E, for example, an N-type impurity such as phosphorus is diffused at a high concentration (an N-type impurity high concentration region 1d having a low resistance value is formed). .
続いて、シリコン基板１裏面にスパッタリング法等に
より白金薄膜を形成し、レジストマスク（図示省略）を
用い、イオンミリング法等でパターニングすることによ
り、第２図（ｆ）にみるように、引出用端子部４を形成
し、続いて、シリコン基板１表面にスパッタリング法等
により白金薄膜を形成し、レジストマスク（図示省略）
を用い、イオンミリング法等でパターンニングすること
により、第２図（ｇ）にみるように、微細な白金パター
ン２を形成する。Subsequently, a platinum thin film is formed on the back surface of the silicon substrate 1 by a sputtering method or the like, and is patterned by an ion milling method or the like using a resist mask (not shown), as shown in FIG. A terminal portion 4 is formed. Subsequently, a platinum thin film is formed on the surface of the silicon substrate 1 by a sputtering method or the like, and a resist mask (not shown) is formed.
Then, a fine platinum pattern 2 is formed as shown in FIG. 2 (g) by patterning by ion milling or the like.
そして、白金パターン２の上に、第２図（ｈ）にみる
ように、スパッタリング法やCVD法等により、二酸化シ
リコン膜やシリコン窒化膜を厚み数μｍ蒸着し保護膜３
とする。Then, as shown in FIG. 2H, a silicon dioxide film or a silicon nitride film having a thickness of several μm is deposited on the platinum pattern 2 by a sputtering method, a CVD method, or the like.
And
その後、第２図（１）にみるように、白金リード線５
を引出用端子部４に半田接着や熱圧着により固着する。After that, as shown in FIG.
Is fixed to the lead terminal section 4 by solder bonding or thermocompression bonding.
なお、このようにして得た感温センサでは、白金薄膜
抵抗体には正の電圧を加えて動作させる。これは半導体
基板１内では拡散領域1dと他領域の間にPN接合が形成さ
れており、正の電圧だと他領域に電流が流れずにすむけ
れど、負の電圧だとバイアスが逆となり、他領域に電流
が流れてしまうからである。したがって、白金薄膜抵抗
体に加わる動作電圧が負である場合には、半導体基板１
にＮ型シリコン基板を用い、不純物として、例えば、ホ
ウ素等のＰ型不純物を拡散させ拡散領域を形成する。The temperature sensor thus obtained is operated by applying a positive voltage to the platinum thin film resistor. This is because a PN junction is formed between the diffusion region 1d and the other region in the semiconductor substrate 1, and if the voltage is positive, the current does not flow to the other region, but if the voltage is negative, the bias is reversed. This is because a current flows to another area. Therefore, when the operating voltage applied to the platinum thin film resistor is negative, the semiconductor substrate 1
Then, using an N-type silicon substrate, a P-type impurity such as boron is diffused as an impurity to form a diffusion region.
感温センサの感温体がバルク状抵抗体の場合には、抵
抗体自体の抵抗値が低く（50〜100Ω）て回転設計の際
の制約が大きいが、この発明の感温センサのように、薄
膜抵抗体の場合、抵抗体自体の抵抗値が比較的高いた
め、回路設計の際の制約が少ないという利点もある。When the temperature sensor of the temperature sensor is a bulk resistor, the resistance value of the resistor itself is low (50 to 100Ω) and there are great restrictions in the rotary design, but as in the temperature sensor of the present invention, In the case of a thin-film resistor, the resistance of the resistor itself is relatively high, so that there is an advantage that there are few restrictions in circuit design.
また、基板１において薄膜抵抗体2aの下側に第６図と
同様に裏面側からの掘り込みがなされていて、薄膜抵抗
体2a形成部分の基板厚みが薄くなっているようであって
もよい。Further, the substrate 1 may be dug from the back side under the thin film resistor 2a in the same manner as in FIG. 6, so that the substrate thickness of the portion where the thin film resistor 2a is formed may be reduced. .
実施例１の感温センサは、上記の製造方法以外の方法
で作られてもよいことはいうまでもない。Needless to say, the temperature sensor of the first embodiment may be manufactured by a method other than the above-described manufacturing method.
−実施例２− 第３図（ａ）、（ｂ）は、この発明にかかる感温セン
サの他の実施例の要部をあらわす。Example 2 FIGS. 3 (a) and 3 (b) show a main part of another example of the temperature sensor according to the present invention.
この感温センサは、掘り込み1a′と孔11aからなる貫
通孔があって、基板１表裏面側には孔11aの所を除いて
それぞれに絶縁層（例えば、酸化物層や窒化物層）11、
21を有する半導体基板（例えば、シリコン基板）１を備
えるとともに、温度変化に伴い抵抗値の変わる白魔抵抗
体2aと裏面側接続部2bとからなる白金パターン２を備
え、かつ、薄膜抵抗体2aを外部に取り出すための２個の
引出用端子部４を備えている。図にみるように、白金パ
ターン２は半導体基板（絶縁基板）１表面に、白金から
なる引出用端子部４が半導体基板１裏面にそれぞれ形成
されている。薄膜抵抗体２の裏面側接続部2bが貫通孔に
臨んでいるとともに、同裏面側接続部2bに引出用端子部
４が直接コンタクトすることにより薄膜抵抗体２と引出
用端子部４の間の電気的接続がなされている。これら白
金パターン２や引出用端子部４は、実施例１の場合と同
様にして形成されている。引出用端子部４にはリード線
５が半田接着、熱圧着などにより固着されている。そし
て、半導体基板１の全表面には酸化物膜や窒化物膜（二
酸化シリコン膜や窒化シリコン膜）からなる厚みμｍ程
度の薄い保護膜３が積層形成されている。This temperature sensor has a through hole composed of a dug 1a 'and a hole 11a, and an insulating layer (for example, an oxide layer or a nitride layer) is formed on each of the front and back surfaces of the substrate 1 except for the hole 11a. 11,
A semiconductor substrate (e.g., a silicon substrate) 1 having a metal substrate 21 and a platinum pattern 2 composed of a white magic resistor 2a whose resistance value changes with temperature and a back side connection 2b, and a thin film resistor 2a It is provided with two drawing terminal portions 4 for taking out to the outside. As shown in the figure, a platinum pattern 2 is formed on a surface of a semiconductor substrate (insulating substrate) 1 and a lead terminal 4 made of platinum is formed on a back surface of the semiconductor substrate 1. The rear surface side connection portion 2b of the thin film resistor 2 faces the through hole, and the extraction terminal portion 4 directly contacts the rear surface side connection portion 2b, so that the portion between the thin film resistor 2 and the extraction terminal portion 4 is formed. Electrical connections are made. The platinum pattern 2 and the lead terminal 4 are formed in the same manner as in the first embodiment. A lead wire 5 is fixed to the lead terminal portion 4 by solder bonding, thermocompression bonding, or the like. On the entire surface of the semiconductor substrate 1, a thin protective film 3 having a thickness of about μm made of an oxide film or a nitride film (a silicon dioxide film or a silicon nitride film) is formed.
実施例１、２の感温センサでは、リード線固着部に樹
脂材料や低融点ガラス等の保護被覆部が設けられること
がある。リード線固着部が薄膜抵抗体形成面とは逆の側
にあるため、リード線固着部に保護被覆を形成しないま
まの場合もある。In the temperature-sensitive sensors of the first and second embodiments, a protective coating portion such as a resin material or a low-melting glass may be provided on the lead wire fixing portion. Since the lead wire fixing portion is on the side opposite to the surface on which the thin film resistor is formed, there is a case where the protective coating is not formed on the lead wire fixing portion.
続いて、実施例２の感温センサの製造方法の一例を、
第４図（ａ）〜（ｈ）を参照しながら説明する。Subsequently, an example of a method for manufacturing the temperature sensor of the second embodiment will be described.
This will be described with reference to FIGS.
まず、第４図（ａ）にみるように、基板用材料とし
て、表面（100）面であるシリコン基板１を用い、熱酸
化法、CVD法等により両面に二酸化シリコン層（または
窒化シリコン層）11、21′を形成する。First, as shown in FIG. 4 (a), a silicon substrate 1 having a surface (100) is used as a substrate material, and a silicon dioxide layer (or a silicon nitride layer) is formed on both sides by a thermal oxidation method, a CVD method, or the like. 11, 21 'are formed.
ついで、レジストレジストマスク（同レジストマスク
の図示は省略）を用い、第４図（ｂ）にみるように、基
板裏面側に窓23を明けておいて、KOH（40wt％）およびH
2O（60wt％）の組成で80℃のアルカリエッチング液を用
い、シリコン層がなくなるまで異方性エッチング施し、
第４図（ｃ）にみるように、掘り込み1a′を形成する。Next, as shown in FIG. 4 (b), a window 23 was opened on the back side of the substrate using a resist resist mask (not shown), and KOH (40 wt%) and H
Anisotropic etching using a 2 O (60 wt%) composition at 80 ° C. with an alkaline etchant until the silicon layer disappears,
As shown in FIG. 4 (c), a dug 1a 'is formed.
掘り込み1a′形成後、第４図（ｄ）にみるように、こ
の掘り込み1a′部分を覆うように酸化膜（または窒化
膜）を基板１裏面側に形成し絶縁層21形成してから、ス
パッタリング法等により白金薄膜を基板１裏面側に形成
し、レジストマスク（図示省略）を用い、イオンミリン
グ法等でパターニングすることにより、引出用端子部４
を形成する。After the formation of the digging 1a ', as shown in FIG. 4 (d), an oxide film (or a nitride film) is formed on the back side of the substrate 1 so as to cover the digging 1a' and the insulating layer 21 is formed. The lead terminal 4 is formed by forming a platinum thin film on the back side of the substrate 1 by a sputtering method or the like and patterning it by an ion milling method or the like using a resist mask (not shown).
To form
続いて、第４図（ｅ）にみるように、レジストマスク
（図示省略）を用い、ウエットエッチング（あるいはド
ライエッチング）により、掘り込み1a′底に孔11aを明
ける（掘り込み1a′と孔11aとで基板１に貫通孔が明い
たことになる）。Subsequently, as shown in FIG. 4E, a hole 11a is formed at the bottom of the dug 1a 'by wet etching (or dry etching) using a resist mask (not shown) (the dug 1a' and the hole 11a). With this, a through hole is made in the substrate 1).
そして、シリコン基板１表面にスパッタリング法等に
より白金薄膜を形成し、レジストマスク（図示省略）を
用い、ウエットエッチングあるいはイオンミリング法等
でパターニングすることにより、第４図（ｆ）にみるよ
うに、白金パターン２を裏面側接続部2bが孔11aに臨ん
で引出用端子部４に接合するパターンでもって形成す
る。Then, a platinum thin film is formed on the surface of the silicon substrate 1 by sputtering or the like, and is patterned by wet etching or ion milling using a resist mask (not shown), as shown in FIG. 4 (f). The platinum pattern 2 is formed in a pattern in which the back side connection portion 2b faces the hole 11a and is joined to the lead terminal portion 4.
その後、白金パターン２の上に、第４図（ｇ）にみる
ように、スパッタリング法やCVD法等により、二酸化シ
リコン膜やシリコン窒化膜を厚み数μｍ蒸着し保護膜３
とする。Thereafter, as shown in FIG. 4 (g), a silicon dioxide film or a silicon nitride film is deposited on the platinum pattern 2 by a sputtering method or a CVD method to a thickness of several μm to form a protective film 3.
And
引出用端子部４と白金パターン２の形成順序は逆であ
ってもよく、その際、白金パターン２の上に保護膜３を
形成した後、引出用端子４を形成するようにしてもよ
い。The order of forming the lead terminal portion 4 and the platinum pattern 2 may be reversed. At that time, the protective terminal 3 may be formed on the platinum pattern 2 and then the lead terminal 4 may be formed.
最後に、第４図（ｈ）にみるように、白金リード線５
を引出用端子部４に半田接着や熱圧着により固着する。Finally, as shown in FIG.
Is fixed to the lead terminal section 4 by solder bonding or thermocompression bonding.
また、基板１において薄膜抵抗体2aの下側に第６図と
同様に裏面側からの掘り込みがなされていて、薄膜抵抗
体2a形成部分の基板厚みが薄くなっているようであって
もよい。Further, the substrate 1 may be dug from the back side under the thin film resistor 2a in the same manner as in FIG. 6, so that the substrate thickness of the portion where the thin film resistor 2a is formed may be reduced. .
実施例２の感温センサは、上記の製造方法以外の方法
で作られてもよいことはいうまでもない。It goes without saying that the temperature sensor of the second embodiment may be made by a method other than the above-described manufacturing method.
以上に述べたように、請求項１〜５記載の感温センサ
では、検温が感温用薄膜体でなされる構成であるため、
センサ小型化が容易であり、しかも、感温用薄膜体形成
面と引出用端子部形成面が基板の裏面と表面に分かれて
いるため、感温用薄膜体形成面に信頼性の高い保護膜を
薄い厚みで容易に形成できるため、熱応答性が十分なも
のとなる。As described above, in the temperature-sensitive sensor according to claims 1 to 5, since the temperature is detected by the temperature-sensitive thin film,
The sensor can be easily miniaturized, and the surface on which the temperature-sensitive thin film is formed and the surface on which the lead-out terminals are formed are divided into the back and front surfaces of the substrate. Can be easily formed with a small thickness, so that the thermal responsiveness is sufficient.
第１図（ａ）、（ｂ）は、実施例１の感温センサの要部
をあらわす図であって、図（ａ）は斜視図であり、図
（ｂ）はＩ−II断面図である。第２図は、この感温セン
サを製造するときの様子を工程順にあらわす概略断面図
である。第３図（ａ）、（ｂ）は、実施例２の感温セン
サの要部をあらわす図であって、図（ａ）は斜視図であ
り、図（ｂ）はＩ−II断面図である。第４図は、この感
温センサを製造するときの様子を工程順にあらわす概略
断面図である。第５図は、従来の感温センサの要部をあ
らわす斜視図、第６図（ａ）、（ｂ）は、従来の他の感
温センサの要部をあらわす図であって、図（ａ）は斜視
図であり、図（ｂ）はＩ−II断面図である。第７図
（ａ）、（ｂ）は、第５図の感温センサにおける保護膜
の構成を説明するための図であって、図（ａ）は斜視図
であり、図（ｂ）はＩ−II断面図である。第８図
（ａ）、（ｂ）は、第５図の感温センサにおける保護膜
の他の構成を説明するための図であって、図（ａ）は斜
視図であり、図（ｂ）はＩ−II断面図である。 １……半導体基板、1b……厚みの薄い部分 2a……薄膜抵抗体（感温薄膜体）、３……保護膜 2b……裏面側接続部、４……引出用端子部、11……絶縁
層1 (a) and 1 (b) are views showing a main part of the temperature sensor of Example 1, wherein FIG. 1 (a) is a perspective view and FIG. 1 (b) is a cross-sectional view along I-II. is there. FIG. 2 is a schematic cross-sectional view showing a state of manufacturing the temperature sensor in a process order. 3 (a) and 3 (b) are views showing a main part of the temperature sensor of Example 2, wherein FIG. 3 (a) is a perspective view and FIG. 3 (b) is a cross-sectional view taken along I-II. is there. FIG. 4 is a schematic cross-sectional view showing a state of manufacturing the temperature sensor in the order of steps. FIG. 5 is a perspective view showing a main part of a conventional temperature sensor, and FIGS. 6 (a) and 6 (b) are views showing main parts of another conventional temperature sensor. ) Is a perspective view, and FIG. 2B is a cross-sectional view along I-II. 7 (a) and 7 (b) are views for explaining the configuration of a protective film in the temperature sensor of FIG. 5, where FIG. 7 (a) is a perspective view and FIG. -It is a II sectional view. 8 (a) and 8 (b) are diagrams for explaining another configuration of the protective film in the temperature sensor of FIG. 5, where FIG. 8 (a) is a perspective view and FIG. 8 (b) Is a sectional view taken along the line I-II. DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 1b ... Thin part 2a ... Thin film resistor (temperature-sensitive thin film), 3 ... Protective film 2b ... Back side connection part, 4 ... Lead-out terminal part, 11 ... Insulating layer
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭64−65427（ＪＰ，Ａ) 特開 昭62−274601（ＪＰ，Ａ) 特開 昭61−134655（ＪＰ，Ａ) (58)調査した分野(Int.Cl.6，ＤＢ名) H01C 7/02 - 7/22────────────────────────────────────────────────── (5) References JP-A-64-65427 (JP, A) JP-A-62-274601 (JP, A) JP-A-61-134655 (JP, A) (58) Field (Int.Cl. 6 , DB name) H01C 7/02-7/22
Claims (5)
薄膜体に接続される引出用端子部が前記基板に設けられ
ている感温センサにおいて、前記引出用端子部が基板裏
面側に形成され、この引出用端子部と感温用薄膜体の間
の電気的接続が前記基板内を通してなされているととも
に、感温用薄膜体形成面が保護膜で覆われてなる感温セ
ンサ。1. A temperature-sensitive sensor in which a temperature-sensitive thin film is formed on a surface of a substrate, and a lead-out terminal connected to the thin-film is provided on the substrate. A temperature-sensitive sensor in which an electrical connection between the lead-out terminal portion and the temperature-sensitive thin film is made through the substrate, and a surface on which the temperature-sensitive thin film is formed is covered with a protective film.
温用薄膜体の裏面側接続部が臨んでいるとともに、同裏
面側接続部に引出用端子部が直接コンタクトすることに
より電気的接続がなされている請求項１記載の感温セン
サ。2. A through-hole is formed in a substrate, and a back side connection portion of the temperature-sensitive thin film body faces the through-hole, and an extraction terminal portion directly contacts the back side connection portion to generate electric power. 2. The temperature sensor according to claim 1, wherein the temperature sensor is electrically connected.
なる絶縁基板であって、前記絶縁層の上に感温用薄膜体
が形成されている請求項１または２記載の感温センサ。3. The temperature-sensitive sensor according to claim 1, wherein the substrate is an insulating substrate formed by laminating an insulating layer on a semiconductor layer surface, and a temperature-sensitive thin film is formed on the insulating layer. .
分が局所的に形成されていて、同厚みの薄い部分表面の
絶縁層が除去された跡に感温用薄膜体の裏面側接続部が
引出用端子部と電気的にコンタクトし、同厚みの薄い部
分裏面に引出用端子部が電気的にコンタクトしている請
求項３記載の感温センサ。4. A portion having a thin thickness and a high impurity concentration locally formed in a semiconductor layer, and a rear-side connection portion of the temperature-sensitive thin film body is formed at a mark where the insulating layer on the surface of the thin portion having the same thickness is removed. 4. The temperature-sensitive sensor according to claim 3, wherein the terminal is in electrical contact with the extraction terminal portion, and the extraction terminal portion is electrically in contact with the back surface of the thin portion having the same thickness.
なる蒸着膜である請求項１から４までのいずれかに記載
の感温センサ。5. The temperature-sensitive sensor according to claim 1, wherein the protective film is a deposited film made of an oxide and / or a nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1738390A JP2772095B2 (en) | 1989-06-27 | 1990-01-26 | Temperature sensor |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-164794 | 1989-06-27 | ||
| JP16479489 | 1989-06-27 | ||
| JP1738390A JP2772095B2 (en) | 1989-06-27 | 1990-01-26 | Temperature sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0394401A JPH0394401A (en) | 1991-04-19 |
| JP2772095B2 true JP2772095B2 (en) | 1998-07-02 |
Family
ID=26353891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1738390A Expired - Fee Related JP2772095B2 (en) | 1989-06-27 | 1990-01-26 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2772095B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08236304A (en) * | 1995-02-28 | 1996-09-13 | Sony Chem Corp | Protective element |
| JP2006261661A (en) * | 2005-02-18 | 2006-09-28 | Mitsubishi Materials Corp | Temperature sensor and manufacturing method |
| CN110862063A (en) * | 2018-08-28 | 2020-03-06 | 无锡华润上华科技有限公司 | Temperature sensor preparation method and temperature sensor |
-
1990
- 1990-01-26 JP JP1738390A patent/JP2772095B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0394401A (en) | 1991-04-19 |
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