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JP2803801B2 - Semiconductor manufacturing equipment - Google Patents
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JP2803801B2 - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JP2803801B2
JP2803801B2 JP12347591A JP12347591A JP2803801B2 JP 2803801 B2 JP2803801 B2 JP 2803801B2 JP 12347591 A JP12347591 A JP 12347591A JP 12347591 A JP12347591 A JP 12347591A JP 2803801 B2 JP2803801 B2 JP 2803801B2
Authority
JP
Japan
Prior art keywords
semiconductor manufacturing
hole
semiconductor
wafer
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP12347591A
Other languages
Japanese (ja)
Other versions
JPH04349632A (en
Inventor
佳和 田村
久 中岡
Original Assignee
松下電子工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 松下電子工業株式会社 filed Critical 松下電子工業株式会社
Priority to JP12347591A priority Critical patent/JP2803801B2/en
Publication of JPH04349632A publication Critical patent/JPH04349632A/en
Application granted granted Critical
Publication of JP2803801B2 publication Critical patent/JP2803801B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Wire Bonding (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はボールボンディング法に
より半導体基板等の表面に突起電極(バンプ)を形成す
る半導体製造装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for forming projecting electrodes (bumps) on a surface of a semiconductor substrate or the like by a ball bonding method.

【0002】[0002]

【従来の技術】従来の突起電極形成用半導体製造装置を
図3に基づいて説明する。
2. Description of the Related Art A conventional semiconductor manufacturing apparatus for forming bump electrodes will be described with reference to FIG.

【0003】この半導体製造装置のステージ部はウェハ
ステージ1とヒータ2と軸受3とベルト4と空圧アクシ
ュエータ5により構成されており、ボンディングヘッド
部は先端部にキャピラリ6と超音波ホーン7とトーチ8
によって構成されている。
The stage portion of this semiconductor manufacturing apparatus comprises a wafer stage 1, a heater 2, a bearing 3, a belt 4, and a pneumatic actuator 5, and a bonding head portion has a capillary 6 and an ultrasonic horn 7 at its tip. Torch 8
It is constituted by.

【0004】以上のように構成された突起電極形成用半
導体製造装置について、以下その動作について説明す
る。
[0004] The operation of the semiconductor manufacturing apparatus for forming a protruding electrode configured as described above will be described below.

【0005】すなわちウェハステージ1上に半導体ウェ
ハ9を載置し、ボンディングヘッド部を動作させ、半導
体ウェハ9上に突起電極10を半導体ウェハ9の半分だ
け形成する。それが終了すると、ウェハステージ1を軸
受3とベルト4と空圧アクチュエータ5によりステージ
部を回転させ残りの部分をボンディングしていた。
That is, the semiconductor wafer 9 is placed on the wafer stage 1, and the bonding head is operated to form only half of the semiconductor wafer 9 on the semiconductor wafer 9. When the process is completed, the wafer stage 1 is rotated by the bearing 3, the belt 4, and the pneumatic actuator 5, and the remaining portion is bonded.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上記の
従来の構成では、ステージ全体が回転するため、半導体
ウェハ9の温度を上げるためのヒータ2への接続線、熱
電対の接続線、真空圧供給チューブ等がねじれ、また、
ステージ部全体を回転させるためウェハステージ1部の
剛性低下が起こり、それにより高速ボンディングを行う
際に突起電極10の形状が不安定となる恐れがあった。
However, in the above-described conventional configuration, since the entire stage rotates, a connection line to the heater 2 for increasing the temperature of the semiconductor wafer 9, a connection line to the thermocouple, and a vacuum pressure supply are provided. Tubes are twisted,
Since the entire stage is rotated, the rigidity of the wafer stage 1 is reduced, and the shape of the protruding electrode 10 may become unstable during high-speed bonding.

【0007】本発明は上記課題を解決するもので、ウェ
ハステージを固定しておいて半導体ウェハのみを1回転
させ、ヒータ線等のねじれをなくし、ウェハステージ部
の剛性の高い、安定した半導体製造装置を提供すること
を目的としている。
SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems, and fixes a wafer stage, rotates only a semiconductor wafer by one revolution, eliminates twisting of a heater wire and the like, and provides a stable semiconductor manufacturing device having a high rigidity of a wafer stage portion. It is intended to provide a device.

【0008】[0008]

【課題を解決するための手段】この目的を達成するため
に本発明は、吸着孔は吸着孔兼用の空気噴出孔であり、
その吸着孔兼用の空気噴出孔が、基板置台の上面に対し
て一定の角度θをなす方向で基板置台に設けられている
構成による。
In order to achieve this object, the present invention provides a suction hole, wherein the suction hole is an air ejection hole which also serves as a suction hole.
The air ejection hole, which also serves as the suction hole,
By the configuration are found provided on the substrate table in a direction which forms a predetermined angle θ Te.

【0009】[0009]

【作用】この構成によって、吸着孔から空気を噴出させ
ると、半導体ウェハが浮上するとともに回転する。その
結果ウェハステージを回転させる必要がなくなる。
With this configuration, when air is ejected from the suction holes, the semiconductor wafer floats and rotates. As a result, there is no need to rotate the wafer stage.

【0010】[0010]

【実施例】以下、本発明の一実施例について図面を参照
しながら説明する。
An embodiment of the present invention will be described below with reference to the drawings.

【0011】図1において、従来例の図3と同一部分に
は同一番号を付し、説明を省略する。すなわち本発明の
特徴はウェハステージ1の上面に対し一定の角度θをな
す、吸着孔兼用の空気噴出孔11を設けたことである。
なお12はウェハストッパーである。以下その動作を説
明する。
In FIG. 1, the same parts as those in FIG. 3 of the prior art are denoted by the same reference numerals, and description thereof will be omitted. That is, a feature of the present invention is that an air ejection hole 11 which also serves as a suction hole and has a predetermined angle θ with respect to the upper surface of the wafer stage 1 is provided.
Reference numeral 12 denotes a wafer stopper. The operation will be described below.

【0012】半導体ウェハ9をウェハステージ1上に載
置し、まず半導体ウェハ9の半分にボンディングヘッド
部により突起電極10を形成する。それが終了すると、
4個の空気噴出孔11より5Kg/cm2程度の高圧空気を
噴出し半導体ウェハ9を浮上させる。空気噴出孔11は
図2に示すように、半導体ウェハ9を一方向に回転させ
るために、ウェハステージ1の上面に対し一定の角度θ
をなすよう設けており、ここから高圧空気を噴出するこ
とで半導体ウェハ9を回転させることができる。そして
所定の位置まで回転したらエアーの噴出を停止し、その
空気噴出口11を逆に吸着用真空孔として、半導体ウェ
ハ9をウェハステージ1上に吸着し、残り半分のボンデ
ィングを行う。
A semiconductor wafer 9 is placed on the wafer stage 1, and first, a projection electrode 10 is formed on a half of the semiconductor wafer 9 by a bonding head. When it is finished,
High pressure air of about 5 kg / cm 2 is ejected from the four air ejection holes 11 to float the semiconductor wafer 9. As shown in FIG. 2, the air ejection holes 11 are fixed at a certain angle θ with respect to the upper surface of the wafer stage 1 in order to rotate the semiconductor wafer 9 in one direction.
The semiconductor wafer 9 can be rotated by ejecting high-pressure air therefrom. Then, when rotated to a predetermined position, the ejection of air is stopped, and the air ejection port 11 is used as a vacuum hole for suction to suck the semiconductor wafer 9 onto the wafer stage 1 and perform bonding of the remaining half.

【0013】[0013]

【発明の効果】以上のように本発明は、吸着孔が基板置
台表面における垂直方向から傾斜した方向に形成されて
いるので、固定ステージで半導体ウェハを回転させるこ
とを可能にし、ヒータ等の線のねじれを防ぎ、さらに剛
性を高く構成することで安定した突起電極形成を行うこ
とができる半導体製造装置を提供できる。
As described above, according to the present invention, since the suction holes are formed in the direction inclined from the vertical direction on the surface of the substrate mounting table, the semiconductor wafer can be rotated on the fixed stage, and the wires such as heaters can be used. A semiconductor manufacturing apparatus capable of preventing torsion and further increasing the rigidity to stably form a protruding electrode can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施例の半導体製造装置の斜視図FIG. 1 is a perspective view of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

【図2】図1の空気噴出孔部分を説明するための斜視図FIG. 2 is a perspective view for explaining an air ejection hole portion of FIG. 1;

【図3】従来の半導体製造装置の斜視図FIG. 3 is a perspective view of a conventional semiconductor manufacturing apparatus.

【符号の説明】[Explanation of symbols]

1 ウェハステージ 2 ヒータ 6 キャピラリ 7 超音波ホーン 8 トーヂ 9 半導体ウェハ 10 突起電極 11 空気噴出孔(吸着孔) 12 ウェハストッパー DESCRIPTION OF SYMBOLS 1 Wafer stage 2 Heater 6 Capillary 7 Ultrasonic horn 8 Toe 9 Semiconductor wafer 10 Projection electrode 11 Air ejection hole (suction hole) 12 Wafer stopper

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6,DB名) H01L 21/60──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 21/60

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 半導体基板を吸着し固定する吸着孔を有
する基板置台と、前記半導体基板の表面上にボールボン
ディング法により接合を行うボンディングヘッドとを備
えた半導体製造装置において、前記吸着孔は吸着孔兼用
の空気噴出孔であり、その吸着孔兼用の空気噴出孔が、
前記基板置台の上面に対して一定の角度θをなす方向で
前記基板置台に設けられていることを特徴とする半導体
製造装置。
A substrate stage having a 1. A adsorbs the semiconductor substrate fixed to the suction hole, in a semiconductor manufacturing apparatus and a bonding head for bonding by the ball bonding method on a surface of the semiconductor substrate, wherein the suction hole is adsorbed Hole
Air ejection hole, and the air ejection hole also serving as the suction hole,
In a direction making a certain angle θ with respect to the upper surface of the substrate table.
The semiconductor manufacturing apparatus characterized by being provided et the substrate table.
JP12347591A 1991-05-28 1991-05-28 Semiconductor manufacturing equipment Expired - Fee Related JP2803801B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12347591A JP2803801B2 (en) 1991-05-28 1991-05-28 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12347591A JP2803801B2 (en) 1991-05-28 1991-05-28 Semiconductor manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH04349632A JPH04349632A (en) 1992-12-04
JP2803801B2 true JP2803801B2 (en) 1998-09-24

Family

ID=14861551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12347591A Expired - Fee Related JP2803801B2 (en) 1991-05-28 1991-05-28 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JP2803801B2 (en)

Also Published As

Publication number Publication date
JPH04349632A (en) 1992-12-04

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