JP2825851B2 - Method and apparatus for supplying vapor deposition material - Google Patents

Description

Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for supplying a vapor deposition material to a heated position when a thin film is formed on a substrate.

2. Description of the Related Art For example, in order to form a thin film on a long film and to produce a functional film or the like to be a material of a capacitor or a magnetic tape by vacuum deposition or the like, a large amount of steam is generated for a long time. There is a need. For that purpose, it is necessary to continuously supply the deposition material at a heated position such as an evaporation crucible. As one of them, there is a method of supplying a vapor deposition material to a crucible as a wire rod as shown in, for example, “Thin Film Handbook” edited by the Japan Society for the Promotion of Science (published in 1983, published by Ohmsha, p. 105).

This method can be easily applied to a wire if the deposition material is a ductile material such as Al, Ni, or Cu, but it is extremely difficult to apply a wire to a brittle material such as Cr. Further, even if it is not a brittle material, for example, a magnetic film material such as Co-Cr alloy or Co
-Hard materials such as Cr-Ni alloys are not incapable of being made into wire rods, but because of poor workability, processing costs are high,
Not practical. Therefore, such a material is supplied in the form of a bar.

The problem in the case where the material is supplied by the bar will be described with reference to FIGS.

In FIG. 10, reference numeral 1 denotes a vapor deposition material contained in the crucible 2, which is heated and melted by, for example, a known electron beam heating means (not shown). Reference numeral 3 denotes a rod-shaped supply vapor deposition material (hereinafter, abbreviated as a rod). Reference numerals 11, 12, and 13 denote rotating rollers for guiding the rod 3, respectively, and 14 denotes a driving roller. Drive roller 14
The vapor deposition material 1 is driven in the CCW direction by, for example, a known motor (not shown) to sandwich the rod 3 with the rotating roller 11 and melt the rod 3 at a constant speed in the direction of arrow A. To the liquid level 4. Reference numerals 15 and 16 are covers for preventing the vapor of the vapor deposition material 1 from adhering to the rollers 11, 12, 13, and 14.

With the above configuration, in order to form a thin film over a long period of time, the rod material 3 is supplied so that the evaporation material 1 in the crucible 2 does not decrease due to evaporation.

The behavior of the tip 5 after the tip 5 of the bar 3 contacts the liquid surface 4 will be described with reference to FIGS. 11 to 14. FIG. FIG. 11 is a view of the moment when the tip 5 of the bar 3 comes into contact with the liquid surface 4, and this moment is referred to as a state a. In this state a, the tip 5 absorbs heat from the liquid level 4 and starts melting, and becomes the solution 6 and dissolves in the solution of the vapor deposition material 1 as indicated by the arrow R in the state b shown in FIG. At this time, heat is transmitted to the tip 5 in a direction opposite to the arrow R, and the melting of the tip 5 proceeds. This phenomenon will be referred to as melting. As the melting proceeds, the distance g between the liquid level 4 and the tip 5 of the rod 3 increases, so that heat from the liquid level 4 is less likely to be transmitted to the tip 5,
As shown in state c in FIG. 13, the amount of melting of the tip 5 decreases, and the amount of the solution 6 decreases. Then, the tip 5 becomes more difficult to melt, and finally the melting stops as shown in the state d in FIG.

During this time, the rod material 3 is continuously fed in the direction of the arrow A. However, since the melting speed of the tip 5 from the state a to the state d is faster than the speed, the gap D occurs as in the state d. Become. Then, since the bars 3 are continuously fed, the gap D becomes smaller as time elapses, and finally reaches the state a, and the above cycle is repeated sequentially. That is, even if the feed of the bar 3 is continuous, the supply of the bar 3 to the liquid surface 4 is intermittent due to the melting.

While the tip 5 is dissolved in the liquid surface, heat is taken from the liquid surface 4, so that the temperature of the liquid surface 4 decreases. Then, the evaporation rate decreases, and the evaporation rate periodically fluctuates with time as shown in FIG. The distance D in the state d increases as the diameter of the bar 3 increases. The reason is that, when the solution 6 is substantially cylindrical, the larger the diameter is, the smaller the (cylindrical surface area / cylindrical volume) is. This is because the ratio of the amount of heat that escapes is reduced and the material is melted for a longer time. Thus the diameter of the bar is the both increases FIG. 15 period T _L and fluctuations in evaporation rate width H _L thick.

When the evaporation rate fluctuates, there is a serious problem that the thickness of the film in the passing direction fluctuates when performing so-called pass film formation in which a substrate or a film (not shown) is moved while being moved above the crucible 2.

To cope with this problem, a method shown in FIG. 16 in which a bar is melted and then supplied to a crucible is conventionally used in some cases. This method will be described with the same reference numerals as those of FIG. In FIG. 16, when the known electron beam 7 at the tip 5 of the rod 3 is irradiated and melted, and the solution 6 is supplied to the liquid surface, the evaporation rate fluctuates because the temperature of the liquid surface 4 does not decrease as in the previous example. Never. Therefore, the substrate 8 is placed above the crucible 2.
The thickness of the thin film 9 does not fluctuate even when the film is formed in the direction perpendicular to the paper surface.

However, when the vapor deposition material 1 is, for example, a Co—Cr alloy that is a magnetic film material composed of components having different evaporation rates,
Since the evaporation rate is higher than that of Co, M> Y when the Cr content of the target thin film is M and the Cr content of the thin film material 1 when a thin film having the content M is obtained is Y. Liquid level 4
The Cr content of the steam evolved from is equal to M. Therefore, if a material having a Cr content of M is supplied by the amount evaporated, a thin film having a Cr content of M can be continuously deposited while the amount of the thin film material 1 in the crucible 2 is kept constant.

However, in the configuration of FIG. 16, the Cr content of the solution 6 melted by the electron beam 7 is M, so that the Cr content of the vapor generated from the solution 6 is larger than M.

Then, the thin film formed on the right side of the substrate 8
Since the Cr content is high because it is close to the solution 6, the Cr content of the thin film formed on the left is conversely small, and there is a major problem that the thin film 9 having a constant composition cannot be formed over the entire width of the substrate 8. there were.

Therefore, the present invention provides a thin film having a small difference in the content of components in the surface direction even when a thin film composed of a plurality of components having different evaporation speeds is formed when a vacuum deposition is performed, and the evaporation speed is small. It is an object of the present invention to provide a method and apparatus for supplying a deposition material that can be formed.

Means for Solving the Problems And to solve the above problems, the invention according to claim 1 is a method for supplying a solid-state vapor deposition material to a vapor-deposited material that has been melted to supply the vapor-deposition material as vapor. Then, the supply long vapor deposition material in a solid state is transferred toward the liquid surface of the molten vapor deposition material, and the supply long vapor deposition material is brought into contact with the liquid surface to thereby provide the supply long vapor deposition material. When a part of the vapor deposition material is melted and flows into and supplied to the molten vapor deposition material, the transport speed of the supply long vapor deposition material is increased by + in the direction toward the molten vapor deposition material, Direction away from-
Alternately + direction and - switching the direction, + direction velocity V _AV average, when the period of speed changing pattern form as T _S, sent continuously said supply elongated vapor deposition material at a speed V _AV melting said supply elongated vapor deposition material in contact with the liquid surface, melts when a period of repeating the contact with the spacing from the liquid surface was T _L by rising, evaporation material supply method comprising the T _S <T _L It is.

The invention according to claim 2 is a method of supplying a solid-state vapor deposition material to a vapor-deposition material that has been brought into a molten state in order to supply the vapor deposition material as vapor, wherein the solid-state supply long vapor deposition material is supplied. By transferring the melted vapor deposition material toward the liquid surface and bringing the supply long vapor deposition material into contact with the liquid surface, a part of the supply long vapor deposition material is melted to form the molten vapor deposition material. At the time of inflow and supply, the angle between the supply direction of the supply long evaporation material and the liquid surface is set to an angle other than 90 °, and the leading end of the supply long evaporation material is formed of the molten evaporation material. Along with disposing it at a position where it can be melted by contact with the liquid surface, the supply long deposition material is rotated about an axis of the supply long deposition material or about an axis offset by a required distance from the axis. Deposition material supply given to material It is the law.

The invention according to claim 4 is directed to the solid supply long vapor deposition material which faces the liquid surface of the molten vapor deposition material, the direction toward the molten vapor deposition material is +, and the direction away from the molten vapor deposition material is-. A vapor deposition material supply device that, when transported alternately in the + direction and the − direction, supplies the molten vapor-deposited material by being transported as a whole at an average speed V _AV in the + direction, The average transfer speed (V _AV ) of the shaku evaporation material
Based on the command, V _AV = (FB) / ( _TFD + _TBD + _TFS + _TBS ) ... (1) F: + direction transfer amount B:-direction transfer amount (constant) _TFD : + direction transfer net time T _FS : + direction transfer pause time T _FS ≥ 0 T _BD :-direction transfer net time (constant) T _BS :-direction transfer pause time (constant) T _BS ≥ 0 The supply long vapor deposition material is driven, and the supply long vapor deposition material comes into contact with the liquid surface and melts, and the vapor deposition material is supplied into the melted molten vapor deposition material, and the speed switching is performed. The pattern period T _S , when the supply long vapor deposition material is transported at the average speed _VAV , the supply long vapor deposition material contacts the liquid surface and melts, from the liquid surface due to melting up. Assuming that the cycle of repeating separation and contact again is _TL , T _S <T _L
Is a deposition material supply device.

According to the first aspect of the present invention, the supply material is +
When the tip of the supply material comes into contact with the liquid surface of the vapor deposition material, melting starts, but before the melting is continued for a long time, the material is transferred in the negative direction and the tip of the supply material separates from the liquid surface, so a large amount of the The feed does not dissolve into the solution. Accordingly, the decrease in the temperature of the liquid surface is small, and the decrease in the evaporation rate is also small. As a result, the decrease in the film thickness in the pass-through film formation is reduced, and the uniformity of the film thickness can be improved.

Further, even when the supply material is composed of a plurality of components having different evaporation rates, the component having the high evaporation rate evaporates at a higher concentration from the liquid level of the vapor deposition material from the tip of the supply material as in the related art. This causes the thin film formed on the substrate to be more uniform in the surface direction because it melts after coming into contact with the liquid surface, diffuses into the solution of the deposition material, and then evaporates.

According to the second aspect of the present invention, when the rotation of the supply long vapor deposition material is given around the axis by the above configuration, the tip of the supply long vapor deposition material becomes conical by contact with the solution and the supply long vapor deposition material contacts the solution. Since the contact area is small, it is difficult for a large amount of the feed material to be dissolved in the solution at one time. Accordingly, as in the above case, the decrease in the film thickness in the pass-through film formation is reduced, and the uniformity of the film thickness can be improved. Even in the case where the feed material is composed of a plurality of components having different evaporation rates, the uniformity of the thin film in the surface direction can be improved in the same manner as described above.

When a rotation about an axis offset by a required distance from the axis is given, the transfer speed of the supply long evaporation material transferred toward the evaporation material melted in the crucible in the same manner as in the invention according to claim 1. However, when the direction toward the vapor deposition material is + and the direction away from the vapor deposition material is-, the directions are switched substantially alternately between the + direction and the-direction, and are transported in the + direction on average. Therefore, the same effect as the first aspect can be obtained.

According to a fourth aspect of the present invention, there is provided a vapor deposition material supply apparatus capable of realizing material supply having the above-mentioned excellent features by the above configuration.

Embodiments Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. The same components as those of the conventional example are indicated by the same numbers as those of the conventional example.

1 to 4 are views showing a method and an apparatus for supplying a deposition material according to a first embodiment of the present invention.

In FIG. 1, reference numeral 20 denotes a motor, which is driven by a drive circuit 21 to rotate the drive roller 14. The motor 20 may be installed in a vacuum chamber (not shown) or may be installed outside, and the driving roller 14 may be rotated via a known rotation introducing device. An arithmetic circuit 22 calculates a speed pattern of the motor 20 based on an average transfer speed command (V _AU ) 24 of the bar 3 and data in the memory 23, and sends it to the drive circuit 21 as a speed command 25. .

Next, an example of the speed pattern calculation is shown in FIG. In FIG. 2, the transfer speed v indicates the transfer speed of the rod material 3,
+ Indicates the speed in the direction of arrow A, and-indicates the speed in the direction opposite to arrow A. The speed pattern has a trapezoidal wave shape in both the + and-directions. For ease of operation + direction, - the maximum speed in the direction both (V _MAX) is the same, the speed V _MAX from the speed 0
Acceleration / deceleration up to, that is, angles α ₁ , α ₂ , α ₃ , α ₄ are all the same. Also, when the transfer speed changes from the + direction to the-direction and vice versa, an excessive force is not applied to the bar supply mechanism including the rollers and the motor shown in FIG. As pause time
Although T _FS and T _BS are provided, they are not necessarily required.

The area of the trapezoidal wave whose velocity is in the positive direction indicates the transfer amount F in the direction of arrow A, and the area of the trapezoidal wave in the negative direction indicates the transfer amount B in the direction opposite to arrow A. T _FD and T _BD are the net time in the positive direction and the net time in the negative direction, respectively.

In the above, the average transfer speed (V _AU ) is represented by equation (1).

V _AU = (F−B) / (T _FD + T _BD + T _FS + T _BS ) (1) Further, T _FD can be calculated from the equation (2).

T _FD = T _BD + [(FB) / V _MAX ] (2) It should be noted that V _AU can compensate for the evaporation amount of the evaporation material 1 in the crucible 2 as in the conventional case, that is, the evaporation amount. It is set as follows.

The distance B Figure 14 distance _{K 1 (= D / sinθ 1} ) in advance to be larger than the same or K ₁ and, namely the tip of the bar 5
When the bar 3 is driven with the speed pattern of FIG.
The 11 in bar 3 Figure 14 is resumed when a was in the d time T ₁
FIG state a, and the FIG. 12 state b as time elapses from T ₁ to T _2, Fig. 13 state c, the bar 3 in the order of FIG. 14 state d is writing soluble in a solution of the evaporation material 1. Assume that the speed pattern is set so that one cycle T _{S of the} speed pattern is shorter than one cycle T _{L of the related art in} FIG. 15 and becomes, for example, 1/10. Then, the amount of the rod material 3 that dissolves in the solution of the vapor deposition material 1 in one cycle can be reduced to 1/10 of the conventional value. When the amount of the melted liquid decreases, the amount of heat taken from the liquid surface 4 also decreases, so that the temperature decrease of the liquid surface 4 also decreases. Then, the decrease in the evaporation rate is also reduced, and the evaporation rate fluctuates with the period T _S over time as shown in FIG. 3, but the fluctuation width H _S can be reduced to about 1/10 of the conventional H _L. . Therefore, the uniformity of the film thickness in the pass film formation can be improved.

When the tip 5 contacts the liquid surface 4 as shown in FIG. 4, the tip 5 melts and becomes a solution 6. When the rod 3 is, for example, an alloy of Co and Cr composed of components having different evaporation rates as described above, the content of Cr in the solution 6 depends on the deposition material 1 as described above.
Although the solution 6 is larger than that of the above solution, the solution 6 is diffused into the vapor deposition material 1 as shown by an arrow E and is diluted. Therefore, since the generation of the vapor having a large Cr content that evaporates directly from the solution 6 is reduced, the increase in the Cr content in the portion on the right side of the thin film 9 formed on the substrate 8 in FIG. 1 can be suppressed. ,
The uniformity of the content of the component in the width direction of the thin film can be improved.

In the above example, the speed pattern has been described in the form of a trapezoidal wave, but the present invention is not limited to this.
Alternatively, the acceleration / deceleration may be a smooth sinusoidal wave or the like. The cycle T _S may be determined so that the evaporation rate fluctuation width H _S determined from the film thickness fluctuation allowable width has a required value.
Since evaporation rate width of the reasons why the diameter of the bar is the become thicker tends to increase, period T _S may be reduced.

Further, in the above example, the distance B is changed to the distance K ₁ = (D / si
nθ ₁ ) or is set to be larger than K ₁ , that is, the tip 5 of the bar 3 is fed in the negative direction until the liquid level 4 is separated. It is also possible to keep the feed in the negative direction until the state c in FIG. 13, that is, until the tip 5 and the liquid surface 4 are connected by the thin solution 6.
This case is the distance B = length K _2. Even if you do so
Since the time from the state a in FIG. 11 to the state c in FIG. 13 through the state b in FIG. 12 is sufficiently shorter than in the conventional case, the amount of the rod 3 to be melted in one cycle is sufficiently smaller than in the conventional case. In this way, the tip 5 of the rod 3 and the liquid surface 4 are always connected by the thin solution 6. Then, when the tip 5 of the bar 3 and the liquid surface 4 are separated in the negative direction until they are separated, the liquid surface 4 does not sway when it is separated, and vapor deposition can be performed in a more stable state.

The device for transferring the bar 3 is not limited to the above-described drive roller, but may be a device that drives a chain, a belt, a rope, or the like and engages the bar with them. It may be something.

Next, a method and apparatus for supplying a deposition material according to a second embodiment of the present invention will be described with reference to FIGS.

5 and 6, reference numerals 30, 31, 32, 33, and 34 denote rotating rollers for guiding the bar 3, respectively, and a driving roller 35, and each roller contacts the bar 3 at an intersection angle β. I have. The drive roller 35 is driven in the direction of arrow G by, for example, a known motor (not shown) to rotate the rotation rollers 30, 31.
The rod material 3 is sandwiched between them, and is conveyed toward the liquid surface 4 of the melted vapor deposition material 1 at a constant speed in the direction of arrow A while rotating about the axis of the rod material 3. At this time, one of the bars 3
The feed amount per rotation is tanβ.

When the tip 5 of the rod 3 comes into contact with the liquid surface 4, the rod 3 is rotated, so that the rod 3 is melted to have a conical surface 36 as shown in FIG. The contact between the conical surface 36 and the liquid surface 4 is a line contact. In the conventional method shown in FIG. 10, since the rod 3 is not rotated, the tip 5 is flat, and the contact with the liquid surface 4 is surface contact.
In the line contact, since heat is hardly transmitted from the liquid surface 4 to the tip 5 of the bar 3, the amount of the tip of the bar 3 dissolving in the solution of the vapor deposition material 1 is also reduced. Then, similarly to the above, the decrease in the temperature of the liquid surface 4 is reduced, and the decrease in the evaporation rate is also reduced, so that the uniformity of the film thickness can be improved.

Further, the method and apparatus for supplying a deposition material according to the present invention are described in Third Embodiment.
FIG. 7 shows an embodiment.

In FIG. 7, reference numeral 40 denotes a rotation guide, which has a hole 41 for guiding the rod 3 in the longitudinal direction of the rod 3 and is supported by a bearing 42 and a bearing housing 43. It is driven to rotate about the rotation center shaft 44. Reference numeral 45 denotes a flange for preventing the vapor of the vapor deposition material 1 from entering the insides of the covers 15 and 16. Reference numeral 46 denotes a transfer rod driven at a constant speed by means (not shown) in the direction of arrow A. The mechanism for driving the transfer rod may be a drive roller as described above, or may be a mechanism for driving a chain, a belt, a rope, or the like, and engaging a bar with them.
A feed screw may be used. 47 is a rotor,
The tip of the rod 46 is rotatably supported by a bearing 48 that can receive both radical and thrust loads. Bar 3
The rear end 49 is fixed to the rotor 47 with bolts 50.

 Next, the operation of this configuration will be described.

When the rod 3 is pushed by the rod 46 at a constant speed in the direction of arrow A while being rotated by the rotation guide 40 and driven, the tip 5 of the rod 3 makes a spiral movement. Bar 3
If the amount of eccentricity e from the rotation center axis 44 is set to be equal to or greater than the radius of the rod 3, the tip of the rod 3 becomes liquid when the rod 3 rotates halfway from the solid line position in FIG. Face 4
Will be separated from If the eccentricity e is set to be equal to or less than the radius of the rod 3, the tip 5 and the liquid surface 4 of the rod 3 can be always connected by a thin solution 51 as shown in FIG.

Therefore, the velocity pattern in FIG.
_FS = T _BS = 0, the period T _S is the rotation period of the rotation guide 40, and (FB) is the rod 46 per rotation of the rotation guide.
The material supply corresponding to the first embodiment can be performed with the feed amount. Therefore, the same effect as in the first embodiment can be obtained.

The rotation center axis 44 and the bar 3 need not necessarily be parallel to each other, and the vapor deposition material supply method and apparatus according to the fourth embodiment of the present invention may be configured as shown in FIG. The same components as those in FIG. 7 are indicated by the same numbers.

Numeral 60 is a self-aligning rolling bearing, for example.
The rod 3 is fixed to the hole 62 of the rod 70 and slides and guides the rod 3 in the longitudinal direction of the rod 3 at the inner peripheral hole 61. Therefore, there is no problem even if the rotating shaft of the rotating guide 70 and the bar 3 are not parallel. 62 is a transfer rod similar to 46 described above. 63 is bolt 64 to the rear end 46 of bar 3
It is a mounting member fixed with. 65 is a known universal joint,
The bifurcated arm 67 of the rod 62 and the bifurcated arm 68 of the mounting member 63 are connected by a cross-shaped pin 66. The center X point of the cross-shaped pin 66 does not need to be on the extension of the rotation axis of the rotation guide 70.

When the rotation guide 70 is rotated as in FIG. 7 and the rod 62 is driven at a constant speed in the direction of arrow A in the above configuration, the bar 3 is moved to the center X point of the cross-shaped pin 66 of the universal joint 65. A self-aligning rolling bearing 60 at the X point,
The tip 5 makes a spiral movement with the line connecting the rotation center Z point of the rotation guide 70 at the position of arrow A in FIG. That is, the direction of the rotation center axis 71 is the material supply direction. Therefore, when the rotation guide 70 makes a half turn from the solid line position in FIG. 9, the bar 3 comes to the broken line position, and material supply corresponding to the first embodiment can be performed similarly to the configuration of FIG. The effect can be obtained.

The difference between the second embodiment, the third embodiment and the fourth embodiment is that the bar 3 sequentially rotates only, rotates and revolves, and only revolves. However, in each of the configurations shown in FIGS. 5, 7, and 9, θ ₂ ,
θ ₃ and θ ₄ need to be other than 90 °.

In the above embodiment, the shape of the bar is cylindrical, and the quantity is 1
Although the book has been described as an example, the shape may be a prism, a plate, or the like as long as it is a long material, and the number may be plural.

Although the cooling of the bar supply mechanism is omitted, water cooling or the like may be performed as needed.

EFFECT OF THE INVENTION With the above structure, the method for supplying a vapor deposition material of the present invention has a small decrease in the temperature of the liquid surface of the vapor deposition material supply and a small decrease in the evaporation rate. As a result, the uniformity of the film thickness in the pass film formation can be improved.

Also, even when the bar is composed of a plurality of components having different evaporation rates, the component having the higher evaporation rate evaporates at a higher concentration from the liquid level of the deposition material from the tip of the bar as in the conventional case. This is eliminated, and after contacting the liquid surface, melting, diffusing into the solution of the vapor deposition material, and then evaporating, the uniformity of the thin film formed on the substrate in the surface direction can be improved.

With the above configuration, the vapor deposition material supply device of the present invention can realize material supply having the above-described excellent characteristics.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a partial cross section of a method and an apparatus for supplying a deposition material according to a first embodiment of the present invention, FIG. 2 is a diagram showing a transfer speed pattern of a bar in the embodiment, and FIG. FIG. 4 is a graph showing a comparison between the embodiment and the conventional evaporation rate fluctuation, FIG. 4 is an explanatory diagram showing an enlarged part of FIG. 1, and FIG. 5 is a method for supplying a vapor deposition material according to a second embodiment of the present invention; FIG. 6 is a schematic configuration diagram showing the apparatus in a partial cross-section, FIG. 6 is an enlarged view of FIG. 5 as viewed in the direction of the arrow U, and FIG. 7 is a partial cross-sectional view of the vapor deposition material supply method and the apparatus in the third embodiment of the present invention. Schematic configuration diagram shown,
FIG. 8 is an explanatory view showing a main part of FIG. 7 in an enlarged manner, FIG. 9 is a schematic structural view showing a vapor deposition material supply method and its apparatus in a fourth embodiment of the present invention in a partial cross section, FIG. Is a schematic configuration diagram showing a conventional vapor deposition material supply method and its apparatus in a partial cross section, FIG. 1, FIG. 12, FIG. 13, FIG. 14 is an explanatory view showing an enlarged main part of FIG. FIG. 15 is a graph showing a variation in evaporation rate in a conventional method for supplying a deposition material and its apparatus, and FIG.
The figure is a schematic configuration diagram partially showing a cross section of another example of a conventional method for supplying a deposition material and its apparatus. DESCRIPTION OF SYMBOLS 1 ... Vapor deposition material, 2 ... Crucible, 3 ... Bar material, 4 ... Liquid surface, 8 ... Substrate, 9 ... Thin film, 12, 13, 14 ... Rotary roller, 14 ... Drive roller, 20 ... Motor, 21 ... Drive circuit, 23 ... Memory, 24 ... Calculation circuit, 24 ... Average transfer speed command, 44, 71 ... Rotation center axis.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Ryutaro Akutagawa 1006 Kadoma Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (72) Inventor Kayoko Kodama 1006 Kazuma, Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (56) References JP-A-59-133366 (JP, A) JP-A-63-26352 (JP, A)

Claims (5)

(57) [Claims] 1. A method for supplying a solid-state vapor deposition material to a vapor-deposition material in a molten state in order to supply the vapor-deposition material as a vapor, wherein the solid-state supply long vapor deposition material is melted. By transferring the vapor deposition material toward the liquid surface and bringing the supply long vapor deposition material into contact with the liquid surface, a part of the supply long vapor deposition material is melted and flows into the molten vapor deposition material and is supplied. In this case, when the transfer speed of the supply long vapor deposition material is + in the direction toward the molten vapor deposition material and − in the direction away from the molten vapor deposition material, the transport speed is alternately switched to the + direction and the − direction. , + direction velocity V _AV average, forms a period of the speed changing pattern as T _S, when the supply long deposition material sent continuously at a speed V _AV, the supplying elongate vapor deposition material Melts and melts on contact with the liquid surface Riniyoru when the spacing between the periodic repeating contact from the liquid surface was T _L, T _S
<Method of supplying deposition material as _TL . 2. A method for supplying a solid-state vapor deposition material to a vapor-deposition material that has been brought into a molten state in order to supply the vapor-deposition material as vapor, wherein the solid-state supply long vapor deposition material is melted. By transferring the vapor deposition material toward the liquid surface and bringing the supply long vapor deposition material into contact with the liquid surface, a part of the supply long vapor deposition material is melted and flows into the molten vapor deposition material and is supplied. In doing so, the angle between the supply direction of the supply long deposition material and the liquid surface is an angle other than 90 °, and the tip of the supply long material is the liquid surface of the molten deposition material. Along with disposing at a position that can be melted by contact with the supply, the rotation of the supply long vapor deposition material is given about the axis of the supply long vapor deposition material or about an axis offset by a required distance from the axis. Material supply method comprising: 3. The transfer amount per unit time of the supply long vapor deposition material which is transported toward the liquid surface of the molten vapor deposition material,
3. The method according to claim 1, wherein the evaporation amount of the melted evaporation material is substantially equal to the evaporation amount per unit time. 4. When the solid supply long vapor deposition material facing the liquid surface of the molten vapor deposition material is defined as + in the direction toward the molten vapor deposition material and-in the direction away from the molten vapor deposition material, + direction and - as a whole while transporting alternately in the direction a deposition material supplying device for supplying the deposition material in which the melted and conveyed at an average speed V _AV in + direction, the supplying long deposition material the average transfer rate of _{(V AV) V AV = (} F-B) based on the command _{/ (T FD + T BD +} T FS + T BS) ... (1) F: + directional movement amount B: - directional movement amount (constant ) T _FD : + direction transfer net time T _FS : + direction transfer pause time T _FS ≧ 0 T _BD : − direction transfer net time (constant) T _BS : − direction transfer pause time (constant) T _BS ≧ 0 Performed, the supply long deposition material is driven at each calculated value, and the supply long deposition material is Depositing material into the molten melt deposited in the material to melt in contact with the serial liquid surface with is made supplied, the period T _S of the speed changing pattern, the supply elongated vapor deposition material by the average velocity V _AV When transported, the supply long vapor deposition material is in contact with the liquid level, melts, separates from the liquid level due to melting, and the cycle of repeating contact is T _L , T _S <T _L
Material supply device. 5. A change in the transport speed in both the + direction and the-direction is set to a trapezoidal waveform or a rectangular waveform having the maximum speed (V _MAX ), and the equation (1) is given based on the average supply speed (V _AV ) command of the long vapor deposition material. T _FD
Is calculated as T _FD = T _BD + [(FB) / V _MAX ] (However, in the case of a trapezoidal waveform, the acceleration and deceleration are the same in both the + and-directions). The vapor deposition material supply apparatus according to claim 4, wherein the supply long vapor deposition material is driven.