JP2830643B2 - Photoconductive infrared detector - Google Patents
Photoconductive infrared detectorInfo
- Publication number
- JP2830643B2 JP2830643B2 JP4247269A JP24726992A JP2830643B2 JP 2830643 B2 JP2830643 B2 JP 2830643B2 JP 4247269 A JP4247269 A JP 4247269A JP 24726992 A JP24726992 A JP 24726992A JP 2830643 B2 JP2830643 B2 JP 2830643B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving portion
- electrode
- photoconductive infrared
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000010407 anodic oxide Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000000969 carrier Substances 0.000 description 12
- 230000002123 temporal effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007743 anodising Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光伝導型赤外線検出素
子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoconductive infrared detector.
【０００２】[0002]
【従来の技術】光伝導型赤外線検出素子の一種であるＳ
ＰＲＩＴＥと呼ばれる素子は、図４又は図５に示すよう
に画像走査方向に細長い形状を有し、表面及び裏面に陽
極酸化皮膜が形成された化合物半導体層からなる受光部
１と、上記受光部端部に形成されたプラス電極２、グラ
ウンド電極３、及び出力読み出し用電極４によって構成
される。2. Description of the Related Art S, which is a kind of photoconductive infrared detecting element,
The element called PRITE has a light receiving section 1 formed of a compound semiconductor layer having an elongated shape in the image scanning direction as shown in FIG. 4 or FIG. The positive electrode 2, the ground electrode 3, and the output readout electrode 4 formed in the section.
【０００３】上記赤外線検出素子では、上記受光部１に
画像が投影、すなわち赤外線が照射されることによって
上記受光部結晶内部にキャリアが発生し、上記プラス電
極２及びグラウンド電極３間に印加されたバイアス電界
によって上記受光部１を移動する。In the infrared detecting element, an image is projected on the light receiving portion 1, that is, an infrared ray is irradiated to generate a carrier inside the light receiving portion crystal, and the carrier is applied between the plus electrode 2 and the ground electrode 3. The light receiving section 1 is moved by the bias electric field.
【０００４】このとき、上記キャリアが受光部１を移動
する速度、すなわちドリフト速度と、画像を光学系で走
査する速度を一致させると、上記受光部１をキャリアが
移動する間にキャリアの積分が行われ、出力信号は増大
する。At this time, if the speed at which the carrier moves on the light receiving portion 1, that is, the drift speed, and the speed at which the image is scanned by the optical system are matched, the integration of the carrier during the movement of the carrier on the light receiving portion 1 is made. And the output signal increases.
【０００５】上記赤外線検出素子の上記受光部１は、キ
ャリアのドリフト移動及び積分が行われるドリフト領域
５と出力のためにキャリアが集められる出力読み出し領
域６からなるが、通常、上記出力読み出し領域６は、特
性向上及び上記出力読み出し用電極配置の効率化のため
に、滑らかな連続曲線によって狭められた形状となって
いる。The light receiving portion 1 of the infrared detecting element comprises a drift region 5 in which carrier drift movement and integration are performed and an output read region 6 in which carriers are collected for output. Has a shape narrowed by a smooth continuous curve in order to improve characteristics and increase the efficiency of the output readout electrode arrangement.
【０００６】[0006]
【発明が解決しようとする課題】上記プラス電極２及び
上記グラウンド電極３間にバイアス電界を印加した際、
上記プラス電極２を始点とした画像の走査方向の電気力
線７は図４及び図５に示すよう想定される。赤外線照射
によって上記受光部内部に発生したキャリアは、上記両
電極間を結ぶ電気力線７に沿って画像走査方向にドリフ
ト移動する。When a bias electric field is applied between the plus electrode 2 and the ground electrode 3,
The lines of electric force 7 in the scanning direction of the image starting from the plus electrode 2 are assumed as shown in FIGS. Carriers generated inside the light receiving portion by infrared irradiation drift drift in the image scanning direction along lines of electric force 7 connecting the two electrodes.
【０００７】しかし、上記電気力線７は、それぞれ始点
によって描く曲線が異なるため、図４及び図５に示すよ
うに、上記キャリアのドリフト移動距離も異なり、上記
キャリアが発生してから上記グラウンド電極３に到達す
る間での時間、すなわち出力に要するまでの時間にずれ
が生じることになる。したがって、上記構造を有するＳ
ＰＲＩＴＥ型の光伝導型赤外線検出素子では、キャリア
積分効果によって出力信号が増大する反面、出力信号の
時間的広がりも増大して不鮮明な赤外線画像しか得られ
ないという問題点がある。However, since the lines of electric force 7 have different curves depending on the starting points, as shown in FIGS. 4 and 5, the drift movement distances of the carriers are different, and the ground electrode is not generated after the carriers are generated. In other words, there is a difference in the time required to reach No. 3, that is, the time required for output. Therefore, S having the above structure
In the PRITE type photoconductive infrared detecting element, although the output signal increases due to the carrier integration effect, there is a problem that the temporal spread of the output signal also increases and only an unclear infrared image can be obtained.
【０００８】本発明の目的は、出力信号の時間的広がり
の増大を改善し、揺らぎのない鮮明な赤外線画像を形成
する光伝導型赤外線検出素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a photoconductive infrared detecting element which improves a temporal spread of an output signal and forms a clear infrared image without fluctuation.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明による光伝導型赤外線検出素子においては、
受光部を構成する化合物半導体層と、上記半導体層の両
端に設けた一対の対向電極と、一方の上記電極近傍に設
けた出力読み出し用電極とを備えた光伝導型赤外線検出
素子であって、ホールを有し、ホールは、受光部に開口
され、少なくともホール側面には、陽極酸化皮膜を有す
るものである。In order to achieve the above object, a photoconductive infrared detector according to the present invention comprises:
A compound semiconductor layer constituting a light receiving portion, a pair of opposed electrodes provided at both ends of the semiconductor layer, and a photoconductive infrared detection element including an output readout electrode provided near one of the electrodes, It has a hole, and the hole is opened in the light receiving portion, and has an anodic oxide film on at least the side surface of the hole.
【００１０】[0010]
【作用】電気力線は、ホールをよける形状の曲線を描
き、受光部各所に発生したキャリアのドリフト移動距
離、すなわち、キャリアがプラス電極とマイナス電極間
を移動する時間がほぼ均一となり、出力信号の時間的広
がりは最小限に抑えられる。[Function] The line of electric force draws a curve in a shape avoiding the hole, and the drift moving distance of the carrier generated in each part of the light receiving portion, that is, the time for the carrier to move between the plus electrode and the minus electrode becomes almost uniform, and the output is obtained. The temporal spread of the signal is minimized.
【００１１】[0011]
【実施例】以下に本発明の実施例を図を用いて詳細に説
明する。図１に本発明の光伝導型赤外線検出素子の立体
図を、図２及び図３に本発明の光伝導型赤外線検出素子
の平面図を示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a three-dimensional view of the photoconductive infrared detecting element of the present invention, and FIGS. 2 and 3 are plan views of the photoconductive infrared detecting element of the present invention.
【００１２】図において、赤外線受光部１に厚さ１０μ
ｍのＨｇ1-XＣｄXＴｅ（ｘ＝０．２）を用い、プラス電
極２、グラウンド電極３及び出力読み出し用電極４とし
てＡｕ／ＣｒあるいはＴｉ／Ａｕ／Ｔｉからなる約５０
００Åの金属層を蒸着法によって形成した。受光部１の
出力読み出し領域６には、滑らかな曲線からなるホール
８を開口し、また受光部表面，裏面，側面、及びホール
側面には陽極酸化処理を施した。この構成により、発生
したキャリアは、結晶表面準位に捕獲されずに結晶内部
をスムーズに移動することが可能である。ホール８の形
成箇所は、受光部形状によって受光部鉛直方向に関して
限定される。In the figure, the infrared receiving section 1 has a thickness of 10 μm.
m of Hg 1-x Cd x Te (x = 0.2), and about 50 electrodes made of Au / Cr or Ti / Au / Ti as the plus electrode 2, the ground electrode 3, and the output readout electrode 4
A metal layer of 00 ° was formed by an evaporation method. A hole 8 having a smooth curve was opened in the output readout area 6 of the light receiving section 1, and anodizing treatment was performed on the front, back, side, and side surfaces of the light receiving section. With this configuration, the generated carriers can move smoothly inside the crystal without being captured by the crystal surface levels. The location where the hole 8 is formed is limited in the vertical direction of the light receiving unit depending on the shape of the light receiving unit.
【００１３】受光部１が図４に示す形状、すなわち受光
部１の輪郭線が、The light receiving portion 1 has the shape shown in FIG.
【００１４】[0014]
【式１】 または、(Equation 1) Or
【００１５】[0015]
【式２】 などで表される従来型光伝導型赤外線検出素子におい
て、プラス電極２及びグラウンド電極３を結ぶ電気力線
７を同図にあわせて示す。ここで、ｘは、プラス電極２
の中心を原点とし、グラウンド電極３方向の任意の位置
を表し、ｌ1は、曲線の形状を定める定数である。ドリ
フト領域長Ｌは、プラス電極幅Ｗの約１０倍、また読み
出し領域長ｌは、２０〜１００μｍである。(Equation 2) In the conventional photoconductive infrared detecting element represented by the above formula, electric lines of force 7 connecting the plus electrode 2 and the ground electrode 3 are also shown in FIG. Here, x is the plus electrode 2
Center as an origin of, represents any position of the ground electrode 3 direction, l 1 is a constant defining the shape of the curve. The length L of the drift region is about 10 times the width W of the plus electrode, and the length l of the read region is 20 to 100 μm.
【００１６】赤外線照射によって発生したキャリアは、
電気力線７上をドリフト移動することから、例えば受光
部１の側壁近傍に発生したキャリアは、側壁輪郭線とほ
ぼ平行に移動するのに対し、受光部１の中心線上を直進
するキャリアも存在する。このように、受光部各所で発
生したキャリアのドリフト移動距離がそれぞれ異なるこ
とから、発生したキャリアがプラス電極２から受光部内
部を移動してグラウンド電極３に到達するまでの時間の
ずれが生じ、この差は０．１秒であった。Carriers generated by infrared irradiation are:
Carriers generated near the side wall of the light receiving portion 1 move substantially parallel to the side wall contour line, for example, because the carrier drifts on the line of electric force 7, while some carriers travel straight on the center line of the light receiving portion 1. I do. As described above, since the drift movement distances of the carriers generated in various parts of the light receiving unit are different from each other, a time lag occurs between the generated carriers moving from the plus electrode 2 to the inside of the light receiving unit and reaching the ground electrode 3, This difference was 0.1 seconds.
【００１７】これに対し、図２に示す本発明の光伝導型
赤外線検出素子における電気力線７は、受光部中心線上
の出力読み出し領域６に設けたホール８及びホール側壁
の陽極酸化皮膜によって、同図にあわせて示すようにホ
ール８をよける形状の曲線を描く。その結果、受光部各
所で発生したキャリアのドリフト移動距離、すなわちキ
ャリアがプラス電極２とマイナス電極３の間を移動する
時間をほぼ均一にすることにつながり、よって従来型の
光伝導型赤外線検出素子で問題となった出力信号の時間
的広がりを最小限にすることによって鮮明な赤外線画像
を得ることが可能となった。On the other hand, the electric flux lines 7 in the photoconductive infrared detecting element of the present invention shown in FIG. 2 are formed by the holes 8 provided in the output readout area 6 on the center line of the light receiving portion and the anodic oxide film on the side walls of the holes. A curve having a shape avoiding the hole 8 is drawn as shown in FIG. As a result, the drift movement distance of the carrier generated in each part of the light receiving portion, that is, the time for the carrier to move between the plus electrode 2 and the minus electrode 3 is made substantially uniform, and therefore, the conventional photoconductive infrared detecting element is used. As a result, a clear infrared image can be obtained by minimizing the temporal spread of the output signal.
【００１８】一方、受光部１が図５のような形状を有す
る従来型の光伝導型赤外線検出素子では、発生したキャ
リアがプラス電極２からグラウンド電極３に到達するま
での時間のずれが約０．３秒であったが、図３のように
グラウンド電極側の受光部側壁に沿ってホール８を形成
することにより、受光部各所で発生したキャリアのドリ
フト移動距離をほぼ等しくすることが可能となった。On the other hand, in the conventional photoconductive infrared detecting element in which the light receiving section 1 has a shape as shown in FIG. 5, the time lag between the time when the generated carrier reaches the ground electrode 3 from the plus electrode 2 is about 0. 3 seconds, but by forming the holes 8 along the side wall of the light receiving portion on the ground electrode side as shown in FIG. 3, it is possible to make the drift movement distances of carriers generated in various parts of the light receiving portion almost equal. became.
【００１９】[0019]
【発明の効果】以上のように本発明によれば、受光部の
一部に滑らかな曲線からなるホール８を形成することに
よって、受光部の各所で発生したキャリアがドリフト領
域を通過し、出力読み出し領域に到達するのに要する時
間のずれは、最小限に抑えられ、揺らぎのない鮮明な赤
外線画像を得ることができる効果を有する。As described above, according to the present invention, by forming a hole 8 having a smooth curve in a part of the light receiving portion, carriers generated in various portions of the light receiving portion pass through the drift region and are output. The time lag required to reach the readout area is minimized, which has the effect of obtaining a clear infrared image without fluctuations.
【図１】本発明の光伝導型赤外線検出素子の立体図であ
る。FIG. 1 is a three-dimensional view of a photoconductive infrared detecting element of the present invention.
【図２】本発明の光伝導型赤外線検出素子の平面図であ
る。FIG. 2 is a plan view of a photoconductive infrared detecting element of the present invention.
【図３】本発明の光伝導型赤外線検出素子の平面図であ
る。FIG. 3 is a plan view of the photoconductive infrared detecting element of the present invention.
【図４】従来の光伝導型赤外線検出素子の平面図であ
る。FIG. 4 is a plan view of a conventional photoconductive infrared detecting element.
【図５】従来の光伝導型赤外線検出素子の平面図であ
る。FIG. 5 is a plan view of a conventional photoconductive infrared detecting element.
１ 受光部 ２ プラス電極 ３ グラウンド電極 ４ 出力読み出し用電極 ５ ドリフト領域 ６ 出力読み出し領域 ７ 電気力線 ８ ホール DESCRIPTION OF SYMBOLS 1 Light receiving part 2 Positive electrode 3 Ground electrode 4 Output readout electrode 5 Drift area 6 Output readout area 7 Line of electric force 8 Hole
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 31/09──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 6 , DB name) H01L 31/09
Claims (1)
記半導体層の両端に設けた一対の対向電極と、一方の上
記電極近傍に設けた出力読み出し用電極とを備えた光伝
導型赤外線検出素子であって、ホールを有し、 ホールは、受光部に開口され、少なくともホール側面に
は、陽極酸化皮膜を有するものであることを特徴とする
光伝導型赤外線検出素子。1. A photoconductive infrared detector comprising: a compound semiconductor layer constituting a light receiving section; a pair of opposed electrodes provided at both ends of the semiconductor layer; and an output readout electrode provided near one of the electrodes. A photoconductive infrared detection element, comprising: an element, having a hole, the hole being opened in a light receiving portion, and having an anodic oxide film on at least a side surface of the hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4247269A JP2830643B2 (en) | 1992-08-24 | 1992-08-24 | Photoconductive infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4247269A JP2830643B2 (en) | 1992-08-24 | 1992-08-24 | Photoconductive infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0677508A JPH0677508A (en) | 1994-03-18 |
| JP2830643B2 true JP2830643B2 (en) | 1998-12-02 |
Family
ID=17160963
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4247269A Expired - Lifetime JP2830643B2 (en) | 1992-08-24 | 1992-08-24 | Photoconductive infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2830643B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997052A (en) * | 2010-09-08 | 2011-03-30 | 中国科学院上海技术物理研究所 | Tellurium cadmium mercury infrared line column detector with curve extension electrode structure |
-
1992
- 1992-08-24 JP JP4247269A patent/JP2830643B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997052A (en) * | 2010-09-08 | 2011-03-30 | 中国科学院上海技术物理研究所 | Tellurium cadmium mercury infrared line column detector with curve extension electrode structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0677508A (en) | 1994-03-18 |
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